1397 results about "Bipolar junction transistor" patented technology

A system and method for driving a bipolar junction transistor is provided. The system includes a first transistor including a first gate, a first terminal, and a second terminal. The first gate is configured to receive a first control signal. Additionally, the system includes a second transistor including a second gate, a third terminal, and a fourth terminal. The second gate is configured to receive a second control signal. Moreover, the system includes a first resistor including a fifth terminal and a sixth terminal. The fifth terminal is connected to the first terminal, and the sixth terminal is biased to a first predetermined voltage. The fourth terminal is biased to a second predetermined voltage. The second terminal and the third terminal are connected at a node, and the node is connected to a base for a bipolar junction transistor.

This disclosure describes systems, methods, and apparatuses for impedance-matching radio frequency power transmitted from a radio frequency generator to a plasma load in a semiconductor processing chamber. Impedance-matching can be performed via a match network having a variable-reactance circuit. The variable-reactance circuit can comprise one or more reactive elements all connected to a first terminal and selectively shorted to a second terminal via a switch. The switch can comprise a bipolar junction transistor (BJT) or insulated gate bipolar transistor (IGBT) controlled via bias circuitry. In an on-state, the BJT base-emitter junction is forward biased, and AC is conducted between a collector terminal and a base terminal. Thus, AC passes through the BJT primarily from collector to base rather than from collector to emitter. Furthermore, the classic match network topology used with vacuum variable capacitors can be modified such that voltages do not overload the BJT's in the modified topology.

Described herein are embodiments of a bipolar junction transistor including a plurality of base terminal rings having an emitter terminal ring between any two base terminal rings of the plurality of base terminal rings, and a collector terminal ring surrounding the plurality of base terminal rings and the emitter terminal ring and methods of manufacturing the same.

The present invention includes a method for forming a phase change material memory device and the phase change memory device produced therefrom. Specifically, the phase change memory device includes a semiconductor structure including a substrate having a first doped region flanked by a set of second doped regions; a phase change material positioned on the first doped region; and a conductor positioned on the phase change material, wherein when the phase change material is a first phase the semiconductor structure operates as a bipolar junction transistor, and when the phase change material is a second phase the semiconductor structure operates as a field effect transistor.