1383results about "RF amplifier" patented technology

The invention relates to the technical field of wireless communication, and provides a radio frequency low-noise amplifier which comprises an input matching module, a power amplification module, an output matching module, an RC attenuation module and an RC feedback module, the first end of the first inductor serves as the input end of the output matching module, the first end of the first inductor is connected with the output end of the power amplification module, the control end of the switch and the first end of the first adjustable resistor, and the second end of the first inductor is connected with the first end of the second inductor and the first end of the third capacitor. The output end of the switch is connected with the first end of the first capacitor and the first end of the second capacitor. The second end of the second capacitor is connected with the second end of the first adjustable resistor and the second end of the second inductor and used for being connected with a power supply. The second end of the first capacitor is connected with the second end of the third capacitor and serves as the output end of the output matching circuit. The radio frequency low-noise amplifier is adjustable in gain, low in noise and good in linearity performance.

Disclosed is a technology related to a low noise amplifier applied between an RF receiver and an RF switch. A phase difference matching circuit having the same phase difference as a positive gain amplifier is added to an output terminal of an attenuator of a low noise amplifier having a variable gain switching structure. In addition, a variable impedance circuit connected to an output terminal of the positive gain amplifier and an output terminal of a phase difference matching unit to finely adjust the phase difference of each output terminal may be further included.

A power amplifier device includes a transistor die with an elongated bondpad coupled to a terminal of an integrated transistor. The device also includes a substrate formed from a stack of alternating dielectric and patterned conductive layers. An elongated die contact is exposed at a first substrate surface and is attached to the elongated bondpad to provide a uniform connection between the die contact and the elongated bondpad. A vertical interconnect structure is connected to the die contact and extends towards the second substrate surface. A circuit includes passive component(s) coupled to the second substrate surface and to the vertical interconnect structure. An encapsulation material layer covers the passive component(s) and the second substrate surface. A plurality of device interconnects are coupled to the substrate, electrically coupled to the power transistor die, and exposed at a contact surface of the power amplifier device.

An electronic device may include wireless circuitry. The wireless circuitry can include a first input transistor, a first capacitance neutralization having a source terminal coupled to a tail node, and a second order intermodulation generation circuit configured to produce second order intermodulation signals at the tail node. The wireless circuitry can further include a second input transistor and a second capacitance neutralization transistor having a source terminal coupled to the tail node. The first and second capacitance neutralization transistors can be cross-coupled with the input transistors. A fixed or adjustable current source can be coupled to the tail node. The second order intermodulation generation circuit can include a transistor biased in a weak inversion mode.

The invention provides a low-noise amplification circuit, a radio frequency front-end module and an electronic terminal.The low-noise amplification circuit comprises an input matching adjustment circuit, a common-source amplification circuit, a first inductor, an inter-stage feedback circuit, a common-gate amplification circuit, an input and output feedback circuit, an output matching adjustment circuit and an output attenuation circuit; the common-source amplification circuit comprises at least two first signal amplification units; each first signal amplification unit comprises a first field effect transistor; the common-gate amplification circuit comprises at least two second signal amplification units; and each second signal amplification unit comprises a second field effect transistor. According to the low-noise amplification circuit, transconductance nonlinearity of devices under different bias signals can be mutually counteracted, so that the linearity fluctuation of the low-noise amplification circuit at different temperatures is optimized, and the linearity of the low-noise amplification circuit is kept basically not to change along with the temperature change.

An electronic device may include a transmitter coupled to an antenna over a signal path that runs through a front end module. The front end module may include a power amplifier disposed on the signal path. The front end module may include first, second, and / or third signal attenuators disposed on the signal path between an input of the amplifier and the transmitter. The front end module may include a voltage sensor that measures a bias voltage of the amplifier, a temperature that measures a temperature of the amplifier, and / or an impedance sensor that measures an impedance of the antenna. The first signal attenuator may be adjusted based on the measured bias voltage, the second signal attenuator may be adjusted based on the measured temperature, and the third signal attenuator may be adjusted based on the measured impedance to mitigate changes in the amplifier as operating conditions change over time.

In on example, an apparatus includes: a first power amplifier (PA) to receive a first input radio frequency (RF) signal and output a first amplified RF signal; a second PA to receive a second input RF signal and output a second amplified RF signal; and a transformer circuit coupled to an output of the first PA and an output of the second PA. The transformer circuit is to provide, to a load circuit, an RF output signal comprising the first amplified RF signal and the second amplified RF signal.

Wireless circuitry can include a radio-frequency amplifier configured to operate in a plurality of different mode, configuration, or bias settings, a power detector coupled to an output of the radio-frequency amplifier, a plurality of power integrators, and a switching circuit having an input configured to receive a measured power level from the power detector and having outputs coupled to the plurality of power integrators. The switching circuit can have a switch state that is adjusted based on a current mode, configuration, or bias setting for the radio-frequency amplifier. The power integrators may be part of multiple power control loops. The power control loops can be coupled to additional switching circuitry activated based at least party on the current mode, configuration, or bias setting and a subsequent mode, configuration or bias setting for the radio-frequency amplifier.

Apparatus and methods for power amplifier signal limiting are disclosed. In certain embodiments, a front-end system includes a low noise amplifier that amplifies a radio frequency receive signal during a receive frame, a power amplifier that amplifies a radio frequency transmit signal during a transmit frame, and a signal limiter operable to limit a signal power of the power amplifier in an attenuating mode. The signal limiter includes a radio frequency detector configured to generate a detection signal based on detecting a power level of the radio frequency transmit signal, and a latch that locks the signal limiter in the attenuating mode in response to activation of the detection signal. The latch is reset by a bias signal of the power amplifier that is activated during the transmit frame and deactivated during the receive frame.

A radio frequency circuit includes first and second filters for first and second time division duplex (TDD) bands. Third and fourth filters cover third and fourth bands. A switch including a first terminal, a second terminal, and a third terminal to connect these filter to an antenna. The first terminal is connected to only the first filter and the second terminal is connected to only the second filter, among the filters having acoustic wave filters. The third terminal connects to both the third filter and the fourth filter. This configuration enables simultaneous transfer of a transmission signal of the first band and a reception signal of the second band, as well as simultaneous transfer of signals of the third and fourth bands. By isolating the TDD filters on separate terminals, signal quality and isolation are improved during simultaneous operation.

Systems and techniques are provided for power amplifier gain error compensation for a Digital Power Amplifier (DPA). In some aspects, a compensation method includes obtaining in-phase (I) and quadrature-phase (Q) components of a baseband sample corresponding to in-phase input amplitude codes and quadrature-phase input amplitude codes. The in-phase input amplitude codes can be distorted based on first gain pre-compensation information corresponding to an in-phase signal branch of the DPA, to generate pre-distorted output amplitude codes of the I component. The quadrature-phase input amplitude codes can be distorted based on second gain pre-compensation information corresponding to a quadrature-phase signal branch of the DPA, to generate pre-distorted output amplitude codes of the Q component. The DPA can be driven using the pre-distorted output amplitude codes of the I and Q components to generate a Radio Frequency (RF) output.

An impedance matching network for a radio frequency (RF) transmission system can include first port for coupling to a first transistor differential pair. The network can further include a second port for coupling to a second transistor differential pair. The network can further include a matching network connected to the first port and the second port, the matching network comprised of a pair of coupled lines. Other aspects are described.

Apparatus and methods for power amplifiers with broadband matching networks are disclosed. In certain embodiments, a mobile device includes a transceiver that generates a radio frequency input signal, and a front-end system including a compound semiconductor die and a silicon switch die. The compound semiconductor die includes a power amplifier including one or more power amplifier stages that amplify the radio frequency input signal to generate a radio frequency output signal. The silicon switch die includes a band selection switch that receives the radio frequency output signal. The compound semiconductor die and the silicon switch die each include at least one controllable impedance for providing a bandwidth adjustment to the power amplifier.

Amplifiers with new circuit topologies for gain shaping and gain control are described herein. An example amplifier circuit with gain control includes a differential transistor pair, a main transistor pair coupled to the differential transistor pair, an auxiliary transistor pair coupled to the differential transistor pair, and a resistive impedance coupled between base terminals of the auxiliary transistor pair. The resistive impedance can include a pair of matched resistors coupled between base terminals of the auxiliary transistor pair. The amplifier can also include a capacitor coupled from a virtual ground node between the pair of matched resistors to ground. The amplifier circuits described herein can present a preferred gain response as compared to other amplifiers, at both midband and peaking frequencies. The amplifier circuits also offer additional options for control of gain at midband frequencies, among other benefits.

Signal processing circuitry configured to receive an input signal and to output a processed output signal, wherein the signal processing circuitry is configured to: receive an indication of a temporal location of a transient in the input signal; and provide, in the processed output signal, a masking signal bridging the temporal location of the transient to mask the transient.

Circuits and methods include amplification circuitry coupled to a plurality of input signal paths and an output signal path and a unified signal path combining a feedback path couplable between a feedback node in the output signal path and the input signal path via a plurality of input switches and a passive gain path couplable between the feedback node in the output signal path and one or more input signal paths through the input switch. The circuit may include a first capacitor and a variable resistor coupled in series and a second capacitor coupled in series with a feedback path switch and a power supply rejection resistor. The passive gain path may further include a shunt switch coupled in series between a plurality of bypass switches to form a T-switch. A fast charging switch may be configurable to couple a second capacitor to a reference potential during a state change of the unified signal path.

According to embodiments, a method performed by an electronic device includes: identifying a channel bandwidth; identifying one or more active DPD units among a plurality of DPD units of a digital pre-distortion (DPD) circuit based on the channel bandwidth and amount of resource allocated within the channel bandwidth; generating a DPD output signal of the DPD circuit based on the one or more active DPD units; generating an amplifier output signal based on the DPD output signal of the DPD circuit, a digital-to-analog converter (DAC), and a power amplifier (PA). While the DPD output signal is generated, at least one DPD unit different from the one or more active DPD units among the plurality of DPD units of the DPD circuit is deactivated.

A phase shifter (100) with controllable attenuation and a method for controlling the phase shifter is disclosed, the phase shifter (100) comprising a plurality of transmission line segments (120, 220) coupled in series, wherein each said transmission line segment (120, 220) comprises an attenuation circuit (130, 230), selectively couplable between a signal line (126, 222) of the transmission line segment (120, 220) and ground to selectively attenuate a signal propagating through the transmission line segment (120, 220). Each transmission line segment (120, 220) is switchable between a first configuration providing a first phase shift for a signal propagating through the transmission line segment (120, 220) and a second configuration providing a second phase shift, greater than said first phase shift, for a signal propagating through the transmission line segment (120, 220).

Apparatuses and systems implementing an amplifier module are described. The amplifier module can include a substrate. A driver amplifier die, a splitter network, an output amplifier die, a bias controller, and a combiner network can be coupled to the substrate. The driver amplifier die can be configured to receive an input radio frequency (RF) signal. The splitter network can be configured to split an intermediate RF signal outputted from the driver amplifier die into first and second RF signals. The output amplifier die can be configured to receive the first and second RF signals. The bias controller can be configured to bias the driver amplifier die and the output amplifier die. The combiner network can be configured to combine first and second outputs of the output amplifier die to generate an output RF signal and terminate at least one harmonic of the output amplifier die's output impedance.

The invention provides a radio frequency power amplification circuit and an adjusting method thereof. The radio frequency power amplification circuit comprises an image transmission module, a first radio frequency switch, a radio frequency power amplification module, a radio frequency low-noise amplifier, a second radio frequency switch and an antenna module, the radio frequency power amplification module comprises a GaN radio frequency power amplifier, the image transmission module is connected with an RFC of the first radio frequency switch, the GaN radio frequency power amplifier is connected between RF1 channels of the first radio frequency switch and the second radio frequency switch, and the radio frequency low noise amplifier is connected between RF2 channels of the first radio frequency switch and the second radio frequency switch. The antenna module is connected with the RFC of the second radio frequency switch; the two radio frequency switches are configured to control a radio frequency signal transmitted by the image transmission module to flow to the GaN radio frequency power amplifier in a radio frequency transmitting state, and the radio frequency signal is transmitted to the antenna module after being amplified; in the radio frequency receiving state, radio frequency signals received by the antenna module are controlled to flow to the radio frequency low-noise amplifier and are sent to the image transmission module after being amplified. According to the invention, ultra-long distance image transmission of the unmanned equipment can be realized.

A Doherty power amplifier (PA) includes a main amplifier, an auxiliary amplifier, a first inductor coupled between an output of the main amplifier and a first node, a second inductor coupled between an output of the auxiliary amplifier and the first node, and a third inductor coupled between a supply rail and the first node. The Doherty PA also includes a first capacitor coupled between the output of the main amplifier and a ground, a second capacitor coupled between the output of the auxiliary amplifier and the ground, and an impedance matching circuit coupled between the output of the auxiliary amplifier and an output of the Doherty PA.

Wireless circuitry can include a radio-frequency amplifier configured to operate in a plurality of different mode, configuration, or bias settings, a power detector coupled to an output of the radio-frequency amplifier, a plurality of power integrators, and a switching circuit having an input configured to receive a measured power level from the power detector and having outputs coupled to the plurality of power integrators. The switching circuit can have a switch state that is adjusted based on a current mode, configuration, or bias setting for the radio-frequency amplifier. The power integrators may be part of multiple power control loops. The power control loops can be coupled to additional switching circuitry activated based at least party on the current mode, configuration, or bias setting and a subsequent mode, configuration or bias setting for the radio-frequency amplifier.

Certain aspects of the present disclosure generally relate to electronic circuits and, more particularly, to techniques and apparatus for signal amplification. One example apparatus generally includes: a current sensor configured to sense a current associated with an amplifier; and a voltage sensor configured to sense a voltage associated with the amplifier. The apparatus may also include a logic circuit configured to: detect a first over-current condition associated with the amplifier based on the current; detect a first over-voltage condition associated with the amplifier based on the voltage; and adjust an amplification gain to yield a first adjusted gain level for an input signal based on detection of the first over-current condition and the first over-voltage condition, wherein the amplifier is configured to amplify the input signal based on the first adjusted gain level.

An amplifier circuit includes first and second amplifiers, first and second input-side coils, first and second output-side coils, a resistance element, a first switch including first to fourth terminals, and a second switch including fifth to seventh terminals. The first input-side coil is connected between the first amplifier and the first terminal, the second input-side coil is connected between the second amplifier and the third terminal, the first output-side coil is connected between a signal output terminal and the second terminal, the second output-side coil is connected between the fifth terminal and the fourth terminal, and the resistance element is connected between the sixth terminal and the ground.

A radio frequency (RF) power amplifier based on transformer matching is provided. The RF power amplifier includes: a first-stage amplification circuit configured with an input terminal and an output terminal, wherein the output terminal of the first-stage amplification circuit is configured to be connected to one terminal of a main coil of a first transformer; the first transformer configured to include the main coil and a secondary coil, wherein one terminal of the secondary coil is grounded and the other terminal of the secondary coil is connected to a medium-low power mode input terminal of a power switch; the second-stage amplification circuit configured with an input terminal for receiving the amplified RF signal from the first-stage amplification circuit, wherein an output terminal of the second-stage amplification circuit is configured to be connected to a high power mode input terminal of the power switch.

A Doherty amplifier circuit includes a carrier amplifier that amplifies a radio-frequency signal, a peak amplifier that amplifies a radio-frequency signal, and a bias circuit that supplies a bias current or a bias voltage to the peak amplifier. The peak amplifier includes one or more amplifier transistors that amplify a radio-frequency signal, and a state control circuit that controls the operating state of the one or more amplifier transistors on the basis of an input control signal.

Provided are a low-phase-shift variable-gain amplifier and a method for processing a radio frequency signal. The low-phase-shift variable-gain amplifier comprises: a differential cascode amplification circuit, which comprises a common-source transistor and a common-gate transistor, wherein a gate stage of the common-source transistor is connected to a first bias voltage via a target resistor, and a gate stage of the common-gate transistor is connected to a second bias voltage; a current-steering structure, wherein one end of the current-steering structure is connected between the common-source transistor and the common-gate transistor, a third current signal outputted by the current-steering structure is used to adjust a gain of the differential cascode amplification circuit; and a phase compensation circuit, wherein one end of the phase compensation circuit is connected between the common-source transistor and the common-gate transistor.

Embodiments of the present disclosure include adaptive bias control of cascode drivers in envelope tracking power amplifier devices, systems, and methods. In some aspects, a wireless communication device is disclosed that includes a power amplifier. The power amplifier may include a driver stage configured to receive a variable voltage supply signal, and a power amplifier stage following the driver stage. In some embodiments, the driver stage includes a cascode gate bias circuit configured to receive a first signal that is based on the variable voltage supply signal; and a cascode amplifier stage comprising a first field effect transistor (FET) and a second FET in a stacked configuration. The cascode gate bias circuit may be further configured to adaptively convert the first signal into a bias signal for a gate of the first FET. The power amplifier stage may be configured to generate an amplified signal based on the intermediate output.

Radio frequency devices are presented that include input termination paths for use during calibration of these devices using test equipment. In one embodiment, an integrated circuit is disclosed. The integrated circuit may include an input terminal; an amplifier circuit; an input path connecting the input terminal to the amplifier circuit; and a calibration switch connected in series to a resistor to form a calibration path. In some embodiments, the calibration path is connected to the input path, and wherein the calibration switch is configured to be in a closed state during calibration of the amplifier circuit and in an open state after completion of the calibration of the amplifier circuit.

The invention discloses a single-power-supply ultra-wideband temperature compensation low-noise amplifier circuit, and belongs to the technical field of radio frequency microwaves. The circuit is mainly composed of a pre-stage low-noise amplifier module, an inter-stage temperature compensation equalization module and a post-stage driving amplifier module. The temperature compensation equalizer module generates differential voltage related to temperature through a three-stage gallium arsenide diode temperature sensing unit, outputs a control signal through an enhanced FET differential amplification circuit, drives a voltage-controlled attenuation equalizer to dynamically adjust the attenuation amount of a radio frequency signal, and achieves gain stability in a frequency band. Through the collaborative design of a blocking capacitor and a divider resistor, the grid bias of an FET switch is strictly limited in a transconductance linear adjustment interval, and the interval covers 80% of the effective range of the threshold voltage of a gallium arsenide FET tube. The circuit is powered by a single power supply + 5V, stable work of each module is ensured through active bias and a power supply filter network, and the circuit is suitable for extreme temperature environments such as high-frequency communication and radar.