2618results about "Amplifier with semiconductor-devices/discharge-tubes" patented technology

Systems, methods, apparatuses, and computer program products for network-assisted signaling for uplink digital pre-distortion (DPD). A gNB may use an uplink reference signal (RS) to measure a user equipment's (UE's) power amplifier (PA) nonlinearity, where the UE may transmit its UE-specific RS with maximum transmit (Tx) power at a PA measurement window in the uplink. The gNB may train an artificial intelligence-based model to approximate the pre-distortion function (with PA parameters). The gNB may signal DPD-related information, and the UE may determine (and adjust) its DPD function based on the gNB signalling.

The invention relates to the technical field of wireless communication, and provides a radio frequency low-noise amplifier which comprises an input matching module, a power amplification module, an output matching module, an RC attenuation module and an RC feedback module, the first end of the first inductor serves as the input end of the output matching module, the first end of the first inductor is connected with the output end of the power amplification module, the control end of the switch and the first end of the first adjustable resistor, and the second end of the first inductor is connected with the first end of the second inductor and the first end of the third capacitor. The output end of the switch is connected with the first end of the first capacitor and the first end of the second capacitor. The second end of the second capacitor is connected with the second end of the first adjustable resistor and the second end of the second inductor and used for being connected with a power supply. The second end of the first capacitor is connected with the second end of the third capacitor and serves as the output end of the output matching circuit. The radio frequency low-noise amplifier is adjustable in gain, low in noise and good in linearity performance.

A transistor amplifier includes a semiconductor layer structure comprising first and second major surfaces and a plurality of unit cell transistors on the first major surface that are electrically connected in parallel, each unit cell transistor comprising a gate finger coupled to a gate manifold, a drain finger coupled to a drain manifold, and a source finger. The semiconductor layer structure is free of a via to the source fingers on the second major surface.

The invention is suitable for the technical field of wireless communication, and particularly relates to a low-noise amplifier and a radio frequency chip. The low noise amplifier comprises an input matching circuit, a biasing circuit, an amplifying circuit, an output matching circuit, an attenuator and an anti-distortion gain suppression circuit. Compared with the prior art, the anti-distortion gain suppression circuit capable of preventing distortion caused by overlarge waveform amplitude is additionally arranged at the joint of the first MOS tube and the second MOS tube of the amplification circuit, and the problem of linearity deterioration caused by overlarge waveform amplitude of a chip amplification link can be effectively reduced through the anti-distortion gain suppression circuit; therefore, the low noise amplifier can output radio frequency signals with better linearity.

A packaged RF transistor amplifier includes an RF transistor amplifier die having a first terminal, a first lead, an integrated passive device that includes a first series microstrip transmission line, a first bond wire coupled between the first terminal and the first series microstrip transmission line, and a second bond wire coupled between the first series microstrip transmission line and the first lead.

A device includes a package body including a central flange and an amplifier module mounted to the central flange of the surface-mount device. The amplifier module includes a module substrate mounted to the central flange. The module substrate includes a first die mount window, a first circuitry on a first surface of the module substrate, a second circuitry on the first surface of the module substrate, and a first amplifier die mounted on the central flange. The first amplifier die is at least partially disposed within the first die mount window and the first amplifier die is electrically connected to the first circuitry and the second circuitry. The first circuitry is electrically connected to a first lead of the package body and the second circuitry is electrically connected to a second lead of the package body.

Systems and methods are related to a successive approximation analog to digital converter (SAR ADC). In one aspect, a method includes sampling, by a sample and digital to analog conversion (DAC) circuit, an input voltage to obtain a sampled voltage. The method also includes determining, by a comparator coupled to a set of storage circuits, a state of a plurality of bits corresponding to the sampled voltage. The comparator has a current parameter or voltage parameter adjusted based upon a conversion margin. Adjustment of the current parameter or the voltage parameter affects speed of determining the state of the bits. The method also includes storing the bits in the set of storage circuits. In some aspects, an SAR ADC is configured to perform the method.

A control device (100) for controlling a number N, with N ≥ 1, of actuators (200) for actuating N optical elements of an optical system, comprising a control node (K2) coupling to the actuator (200) for providing a control voltage (V2) for the actuator (200), an amplifier (110) configured to receive a supply voltage (V1) provided at an input node (K1) and to provide an output voltage (V3) at an output node (K3), wherein the amplifier (110) comprises a plurality M, with M ≥ 2, of current sources (111, 112) comprising at least one charge-controlled current source (112) and a holding capacitor (113) for maintaining the level of the provided output voltage (V3), and a buffer coupled between the output node (K3) and the control node (K2). (120), which is designed to,to decouple the control node (K2) from the output node (K3) and to provide the control voltage (V2) for the actuator (200) based on the level of the output voltage (V3) of the holding capacitor (113).

The embodiment of the invention provides a radio frequency power amplifier module, a manufacturing method, an antenna transceiver module and a base station, and relates to the technical field of communication equipment. The radio frequency power amplifier module comprises a first substrate; the power amplification component and the isolation component are arranged on the first substrate; the power amplification component is electrically connected with the isolation component through the first substrate; wherein the isolation part comprises a ferrite element and a first area of the first substrate, and the ferrite element is arranged in the first area of the first substrate. According to the embodiment of the invention, the cost of the radio frequency power amplifier module can be effectively reduced, the insertion loss between the power amplification component and the isolation component is reduced while the area of the radio frequency power amplifier module is reduced, and the emission efficiency of the emission path is improved.

The invention relates to a folded cascode low noise amplifier. The disclosed low noise amplifiers (LNAs) include a common emitter amplifier (CE-A), a common gate amplifier (CG-A), and various passive devices located in CE-A and CG-A. The CE-A includes an NPN type bipolar junction transistor (BJT) having emitter and collector (E / C) regions, and a base region located between the E / C regions and connected to an input node. The CG-A includes a P-channel field effect transistor (PFET) having source and drain (S / D) regions, a channel region between the S / D regions, and a gate adjacent to the channel region. A drain region of the PFET is connected to the output node. Further, the common inductor, the collector region of the BJT, and the source region of the PFET are connected at an intermediate node. The LNA is implemented on a three-dimensional integrated circuit (3DIC) in which the BJT and the FET are located on different chips and the passive device is located in a back-end-of-line region between the BJT and the FET.

A current comparator includes: a first capacitor having a first end coupled to a first input signal; a second capacitor having a first end coupled to a second input signal; a first transistor having a control electrode coupled to the second end of the first capacitor; and a third transistor having a control electrode coupled to the second end of the second capacitor. The first current electrodes of the first and second transistors are coupled, and the second current electrodes of the first and second transistors are coupled to the first and second circuit nodes, respectively. A single-ended cascode amplifier has an input coupled to the second circuit node via a third capacitor. A set of auto-zero switches selectively shorts the control electrode of the first transistor and the second current electrode in response to an auto-zero control signal, and selectively shorts the control electrode of the second transistor and the second current electrode.

The invention discloses a moving-coil geophone zero-phase corrector based on a state variable shaper. The zero-phase corrector comprises a state variable shaper, a differential-to-single-ended module and a single-ended-to-differential module. After a moving-coil geophone signal is input into a differential signal, the signal is converted into a single-ended signal suitable for filtering through the differential-to-single-ended module, and a high-pass filter, a band-pass filter and a low-pass filter in the state variable shaper correct the phase characteristic of the frequency response of the geophone to a zero-phase attribute. And finally, the single-ended to differential module converts the single-ended signal into a differential signal again and outputs the differential signal. The phase characteristic correction method can be used for phase characteristic correction of differential signals of the moving-coil geophone, low-frequency response can be expanded while the phase is corrected by changing resistance value adjustment, gain stability in the original bandwidth is kept, phase characteristic correction is provided for output of the moving-coil geophone with different frequencies and amplitudes, and the correction precision of the moving-coil geophone is improved. And the accuracy of the detector signal phase is improved.

A portable battery pack is disclosed for wirelessly powering a portable electronic device through a user's clothing. The portable battery pack includes a housing with a mating surface that includes one or more permanent magnets to facilitate mating with a portable electronic device, such as a body-worn camera.

A disclosed low noise amplifier (LNA) includes a common-emitter amplifier (CE-A), a common-gate amplifier (CG-A) and various passive devices in CE-A and CG-A. CE-A includes an NPN-type bipolar junction transistor (BJT) with emitter and collector (E / C) regions and a base region between the E / C regions and connected to an input node. CG-A includes P-channel field effect transistor (PFET) with source and drain (S / D) regions, a channel region between the S / D region, and a gate adjacent to the channel region. The drain region of the PFET is connected to an output node. Additionally, a common inductor, collector region of the BJT, and source region of the PFET are connected at an intermediate node. The LNA is implemented on a three-dimensional integrated circuit (3DIC) with the BJT and FET on different chips and with passive devices in back end of the line regions between the BJT and FET.

The invention discloses a low-voltage gallium nitride power amplifier based on second harmonic suppression. The low-voltage gallium nitride power amplifier is used for solving the technical problem that the overall efficiency of a radio frequency system is low due to an existing radio frequency power amplifier. The amplifier comprises an input stage circuit, an input stage low-voltage gallium nitride transistor, an intermediate stage circuit, an intermediate stage low-voltage gallium nitride transistor, an output stage circuit, an output stage low-voltage gallium nitride transistor group, a drain bias capacitor, a drain bias voltage port and a secondary harmonic suppression output matching network, by arranging an input-stage low-voltage gallium nitride transistor, an intermediate-stage low-voltage gallium nitride transistor, an output-stage low-voltage gallium nitride transistor group, a secondary harmonic suppression output matching network and a corresponding connection relationship, the secondary harmonic suppression output matching network can be used for suppressing a low-voltage gallium nitride transistor on the basis of a low-voltage gallium nitride process technology. Harmonic suppression is directly carried out on the second harmonic, so that the output power and the power additional efficiency of the radio frequency power amplifier are improved, and the overall efficiency of a radio frequency system is improved.

The present disclosure provides a coupler device for use in a phased array system. The coupler device includes a weighting network and a phase matrix network. The weighting network is configured to convert and amplify an input signal to obtain eight intermediate amplified signals. The phase matrix network is coupled to the weighting network, and is configured to generate eight output signals based on the eight intermediate amplified signals. An output array of the eight output signals are obtained by performing a matrix multiplication of an array of the eight intermediate amplified signals with a phase matrix of the phase matrix network.

The invention discloses a radio frequency front-end module. The radio frequency front-end module comprises a substrate, a signal filtering module, a signal shunting module, a signal detection module and a first chip arranged on the substrate, the first chip comprises a power amplification module; the signal filtering module is connected to the signal output end of the power amplification module; the signal shunting module comprises a first switch and a shunting unit; the signal detection module is configured to control the state of the first switch based on the signal parameter of the radio frequency signal of the power amplification module. For example, the signal detection module controls the first switch to be closed when the signal parameter is greater than a first specified value. As the signal parameter is greater than the first specified value, the power of the radio frequency signal is too large, and the signal filtering module is possibly damaged. The signal detection module timely controls the first switch to be closed, so that the radio frequency signal is shunted through the signal shunting module, the radio frequency signal input into the signal filtering module does not exceed the bearable maximum power value, and the working safety of the signal filtering module is ensured.

An artificial intelligence (AI) driven linearizer for a transmitter, comprising an input interface for inputting linearizer signals comprising information carrying signals, and operating conditions parameter signals, other than the information carrying signal, wherein the operating conditions parameter signals represent metrics affecting transfer characteristics of the transmitter, over a selected operating range of the transmitter, and a predistortion actuator circuit configured with an AI predistortion model for predistorting at least part of the information carrying signal to produce predistorted signals, the predistortion model being configured to be operable for adaptation to said characteristics of the transmitter using a single set of model coefficients that are unchanged over said entirety of said selected operating range.

An electronic device includes a sensor layer and a sensor driver. The sensor layer includes a first electrode, a first auxiliary electrode overlapped with the first electrode, a first loop electrode overlapped with the first electrode, a first loop trace line electrically connected to a first end portion of the first loop electrode, and a second loop trace line electrically connected to a second end portion of the first loop electrode that is spaced apart from the first end portion. The first loop electrode, the first loop trace line, and the second loop trace line are connected in a first closed loop.

Disclosed in the present invention are a radio frequency front-end module with impedance mismatch protection, an electronic device, and a method. The radio frequency front-end module comprises at least one transmit channel, and the transmit channel comprises an input power measurement circuit, a power amplifier circuit, a matching circuit, a load measurement circuit, and a gain control circuit, wherein the input power measurement circuit measures the power of an input radio frequency signal of the transmit channel; the load measurement circuit measures output forward transmission power and reverse transmission power in an output radio frequency signal and calculates a difference; and the gain control circuit compares an input power value and the difference between the output forward transmission power and reverse transmission power with a set first threshold value and a set second threshold value respectively, and outputs a control signal generated on the basis of the comparison result to the power amplifier circuit, so as to adjust the working state of the power amplifier circuit. Thus, impedance mismatch protection is achieved.

One or more aspects of the techniques and models described herein provide for bidirectional recurrent neural network (BiRNN)-based digital pre-distortion techniques for radio frequency (RF) power amplifiers (PAs). As an example, a digital pre-distorter (DPD) system may implement residual learning and long short-term memory (LSTM) projection layer features to reduce computational complexity and memory requirements. Implementing the described unconventional techniques of applying residual learning in RNN (e.g., in BiLSTM), using LSTM projection to develop a DPD structure, or both, may provide several advantages over preexisting techniques. For instance, the complexity in training and pre-distortion may be reduced and significantly less memory may be required to store the DPD neural network coefficients (e.g., while achieving similar or better linearization performance compared to other LSTM models). Further, faster training convergence speed may be achieved (e.g., compared to other LSTM models).

A sensor device includes: first sensors connected to first sensor lines; second sensors connected to second sensor lines, the second sensors intersecting the first sensors; a sensor transmitter connected to the first sensors through the first sensor lines, the sensor transmitter configured to supply touch driving signals to the first sensors during a touch sensing period; and a sensor receiver connected to the second sensors through the second sensor lines, the sensor receiver configured to receive touch sensing signals from the second sensors during the touch sensing period, wherein the sensor receiver includes a plurality of analog front-ends, and wherein each of the plurality of analog front-ends is connected to at least one of the second sensor lines and at least one of the first sensor lines.

Technologies are provided to calculate a logarithm of an input current to a logarithmic transimpedance amplifier device at a particular temperature. The logarithm of the current is calculated in digital domain based on sampling of analog signals that are internal to the logarithmic transimpedance amplifier device. The sampling can be performed, in some cases, by an analog-to-digital converter device integrated into the logarithmic transimpedance amplifier device. The calculation in digital domain is performed by one or more processor external to the logarithmic transimpedance amplifier device. The calculation includes a determination of a temperature compensation factor based on an internal analog signal indicative of temperature of the logarithmic transimpedance amplifier device. The temperature compensation factor permits removing temperature dependence from a logarithmic output voltage originating from the input current. Operating in the digital domain permits applying corrections that account for residual leakage current and an emitter-resistance correction at high input currents.

The invention provides a low-noise amplification circuit, a radio frequency front-end module and an electronic terminal.The low-noise amplification circuit comprises an input matching adjustment circuit, a common-source amplification circuit, a first inductor, an inter-stage feedback circuit, a common-gate amplification circuit, an input and output feedback circuit, an output matching adjustment circuit and an output attenuation circuit; the common-source amplification circuit comprises at least two first signal amplification units; each first signal amplification unit comprises a first field effect transistor; the common-gate amplification circuit comprises at least two second signal amplification units; and each second signal amplification unit comprises a second field effect transistor. According to the low-noise amplification circuit, transconductance nonlinearity of devices under different bias signals can be mutually counteracted, so that the linearity fluctuation of the low-noise amplification circuit at different temperatures is optimized, and the linearity of the low-noise amplification circuit is kept basically not to change along with the temperature change.

A differential transceiver circuit coupled to a single antenna interface, the transceiver circuit comprising: a differential pair of signal paths, comprising a first signal path and a second signal path; differential amplifier, having an input arranged to receive a receive signal from the antenna interface; a differential transmitter arranged to generate a differential pair comprising a first transmit signal connected to the first signal path and a second transmit signal connected to the second signal path; a switching network arranged to divert the amplifier output on the second signal path to a signal ground node. The receive signal on one signal path is diverted to ground. The transmit signal corresponding to the other differential signal path is inserted so that the same transmit signal is present on both differential signal paths. When processed by differential downstream components with high common-mode rejection, the transmit signals cancel out.

Aspects of the present disclosure provide a circuit configured to adjust an input impedance of an amplifier such as a low-noise amplifier. In certain aspects, the circuit is coupled to a node, wherein the node is between a first transistor and a second transistor of the amplifier. The circuit may include an inductor and a capacitor coupled in series, wherein the inductor is coupled with one or more load inductors of the amplifier through negative magnetic coupling.

The invention discloses a radio frequency power amplifier and a radio frequency front-end module. The radio frequency power amplifier comprises an input matching network, a biasing circuit, one or more radio frequency power amplification unit circuits connected in parallel, an output matching network and a peak voltage limiting circuit, the output end of the input matching network is connected with the first input end of the radio frequency power amplification unit circuit; the output end of the biasing circuit is connected with the second input end of the radio frequency power amplification unit circuit; the output end of the radio frequency power amplification unit circuit is connected with the input end of the output matching network through the first capacitor; and the peak voltage limiting circuit is connected with the output end of the biasing circuit and the output end of the radio frequency power amplification unit circuit. The radio frequency front end module comprises a radio frequency power amplifier. The peak voltage limiting circuit is connected with the output end of the biasing circuit and the output end of the radio frequency power amplification unit circuit, so that the peak voltage limiting effect is achieved, and meanwhile, deterioration of the peak voltage limiting circuit to the performance of the main body power amplifier is reduced.

An input buffer includes a pair of input transistors and associated injection circuits. A first input transistor has a source coupled to a first voltage rail through a first current source and a gate coupled to a first wire of a multi-wire serial bus. Three or more resistors in a first injection circuit couple the wires of the serial bus to a first common node, which is coupled to the source of the first input transistor by a first capacitor. A second input transistor has a source coupled to the first voltage rail through a second current source and a gate coupled to a second wire of the serial bus. Three or more resistors in a second injection circuit couple the wires of the multi-wire serial bus to a second common node, which is coupled to the source of the second input transistor by a second capacitor.

The embodiment of the invention provides a radio frequency power assembly and electronic equipment, and relates to the technical field of communication equipment. The radio frequency power assembly comprises a substrate, a first chip, a second chip, an insulating layer, at least three conductive blocks, a first connecting part and a second connecting part. At least part of the insulating layer is arranged on the sides, away from the substrate, of the first chip and the second chip. The at least three conductive blocks are arranged on one side, far away from the substrate, of the insulating layer; the at least three conductive blocks are arranged at intervals along the second direction. One end of the first connecting part penetrates through the insulating layer and is connected with the first chip, and the other end is connected with one end of the conductive block; one end of the second connecting part penetrates through the insulating layer and is electrically connected with the second chip, and the other end is electrically connected with the other end of the conductive block. Among the at least three conductive blocks, the areas of the surfaces, away from the substrate, of at least two conductive blocks are different. According to the structural design of the radio frequency power assembly, a three-dimensional binding wire group structure is avoided, so that the preparation difficulty of the radio frequency power assembly can be effectively reduced.

Described are concepts, systems, system architectures, circuits, methods, and techniques directed toward power management and control. In particular, described are concepts, systems, system architectures, circuits, methods, and techniques for implementing power converters that may not have a right-hand pole zero in their linearized, averaged control-to-output transfer function, but that may still have buck and boost functionality.