3372results about "Oscillations generators" patented technology

An output drive circuit includes: a totem-pole output including: a high-side transistor (HST) with drain and source, an output stage power supply voltage applied to the drain, the source connected to the first node (N1); and a low-side transistor with source and drain, a ground voltage applied to the source, the drain connected to N1; and a bootstrap part including a capacitor supplying charge to a gate of HST when on, the charge being charged when HST is off, and one terminal of the bootstrap part connected to N1, the output drive circuit further including: a first transistor (T1) that conducts when HST is to be on, T1 connected between a drive circuit power supply voltage and the gate of HST; and a second transistor conducting when HST is to be turned on, the second transistor connected between the other terminal of the capacitor and HST gate.

A demodulation signal generator, coupled to an air-pulse generator comprising a flap pair, includes a resonance circuit. The resonance circuit produces a first demodulation signal and a second demodulation signal. The resonance circuit and the flap pair co-perform a resonance operation, such that the first demodulation signal and the second demodulation signal are generated via the co-performed resonance operation and have opposite polarity. The flap pair performs a differential movement to form an opening to perform a demodulation operation on a modulated air pressure variation.

A temperature control device includes a temperature detector, a difference operation unit, a controller, a saturation processing circuit unit, a rewritable storage unit, and a conversion unit. The difference operation unit operates a digital value corresponding to a difference value between a detected temperature value and a target temperature. The controller calculates a manipulated variable using the digital value operated by the difference operation unit. The saturation processing circuit unit includes a digital circuit to limit an output value of the controller to a pre-set upper limit value. The rewritable storage unit stores the upper limit value read from a storage area of the rewritable storage unit and input into the saturation processing circuit unit. The conversion unit converts the output value of the saturation processing circuit unit into an analog signal to output the converted value as a control command value to the heater.

A quadrature oscillator according to the embodiments herein comprising two pairs of main transistors, two pairs of resonators and two pairs of injection transistors. The quadrature oscillator is split into two halves, which are separated in the chip layout. That is the two pairs of resonators are separated from each other, and the two pairs of the main transistors are separated from the resonator they coupled to such that the quadrature oscillator is separated into two spaced apart oscillator halves connected by transmission lines.

The invention discloses an ultra-low phase noise harmonic wave type four-core voltage-controlled oscillator. The ultra-low phase noise harmonic wave type four-core voltage-controlled oscillator is composed of a transformer T1, a transformer T2, a transformer T3, a transformer T4, a head oscillator HR1, a head oscillator HR2, a head oscillator HR3, a head oscillator HR4, a resistor R1, a resistor R2, a resistor R3, a resistor R4 and a plurality of decoupling capacitors Cecap. According to the voltage-controlled oscillator, noise is prevented from being converted into phase noise by means of second and third harmonic impedance broadening, inductance loss reduction, reduction of the sensitive time of the resonant cavity to the noise and the like, the phase noise generated by the voltage-controlled oscillator can be effectively reduced, and excellent noise performance is obtained.

Millimeter wave (mmWave) technology, apparatuses, and methods that relate to transceivers, receivers, and antenna structures for wireless communications are described. The various aspects include co-located millimeter wave (mmWave) and near-field communication (NFC) antennas, scalable phased array radio transceiver architecture (SPARTA), phased array distributed communication system with MIMO support and phase noise synchronization over a single coax cable, communicating RF signals over cable (RFoC) in a distributed phased array communication system, clock noise leakage reduction, IF-to-RF companion chip for backwards and forwards compatibility and modularity, on-package matching networks, 5G scalable receiver (Rx) architecture, among others.

The invention provides an oscillator frequency modulation circuit and a communication chip. The oscillator frequency modulation circuit comprises a first resonance area which comprises a first resonance circuit, a first coupling tube (Mn) and a second coupling tube (Mp), wherein the first coupling tube (Mn) and the second coupling tube (Mp) are cross-coupled with the first resonance circuit; the second resonance area comprises a second resonance circuit, and the second resonance circuit comprises a first branch circuit electrically connected with the first coupling tube (Mn) and a second branch circuit electrically connected with the second coupling tube (Mn); the second branch is electrically connected with the second coupling tube (Mp); the first tail inductor (Ln) is connected to the first branch in series; the second tail inductor (Lp) is connected in series with the second branch; and the differential capacitor array (Ct) is connected between the first branch circuit and the second branch circuit in parallel. According to the oscillator frequency modulation circuit and the communication chip, low noise can be realized in a broadband range, the anti-interference capability is realized, meanwhile, the occupied area is relatively small, and high-quality signals can be continuously output for a multi-protocol system.

The invention discloses a frequency source synthesis system and method based on a frequency agility radar, and belongs to the technical field of microwave radio frequency, and the method specifically comprises the steps: generating a target clock signal, carrying out the frequency processing of the target clock signal to generate a frequency multiplication signal, and dividing the frequency multiplication signal into two clock signals through a power divider; performing frequency multiplication processing on one path of clock signal, taking the processed signal as a clock reference signal of a direct digital synthesizer, generating an analog signal according to the clock reference signal, and calibrating the analog signal as an output signal; performing frequency multiplication processing on the other path of clock signal, and taking the processed clock signal as a local oscillation signal of the frequency mixer; performing frequency conversion processing to obtain a frequency mixing signal, performing quadruplicated frequency processing on the frequency mixing signal, and calibrating the processed frequency mixing signal as a final output signal; according to the invention, the frequency source has the characteristics of low phase noise, rapid agility, fine resolution and miniaturization at the same time.

Millimeter wave (mmWave) technologies, devices, and methods related to transceivers, receivers, and antenna structures for wireless communications are described. Various aspects include collocated millimeter wave (mmWave) antennas and near field communication (NFC) antennas, scalable phased array radio transceiver architecture (SPARTA), phased array distributed communication systems with MIMO support and phase noise synchronization on a single coaxial cable, passing RF signals over cable (RFoC) in distributed phased array communication systems, clock noise leakage reduction, IF to RF auxiliary chips for backward and forward compatibility and modularity, on-package matching networks, 5G scalable receiver (Rx) architectures, and the like.

An oscillation apparatus includes: an oscillator including a resonator and a magnetic-field generation unit, the resonator including a loop circuit and a capacitor, the loop circuit including a first superconducting line, a first Josephson junction, a second superconducting line, and a second Josephson junction connected in a ring shape, the magnetic-field generation unit being configured to apply a magnetic field to the loop circuit, and the oscillator being configured to perform parametric oscillation; a read-out unit for reading out an internal state of the oscillator; and a circuit component in which a coupling strength between the oscillator and the read-out unit is variable. The oscillator is connected to the read-out unit through the circuit component.

A method and apparatus for modifying or controlling a resonator connected to a signal loop having an input, an output, and a closed loop frequency response. The signal loop has a primary resonator having a primary frequency response. There is at least one adjustable resonator having an adjustable frequency and a secondary Q-factor. An adjustable scaling block applies a gain factor. A controller is connected to the at least one adjustable resonator and the adjustable scaling block. The controller has instructions to adjust the closed loop frequency response toward a desired closed loop frequency response by controlling the adjustable frequency of the at least one adjustable resonator and the gain factor of the adjustable scaling block.

The embodiment of the invention provides a high-stability crystal oscillator taming device, system and method, and solves the problems that in the prior art, the precision is insufficient, the stability is insufficient, and the time cannot be kept at high precision by depending on a GPS (Global Positioning System) or under a specific condition. The high-stability crystal oscillator taming equipment comprises a judgment module which is used for receiving the time signal of the satellite and carrying out validity judgment; and the phase detection module is used for receiving a second signal sent by the high-stability crystal oscillator to be detected and performing phase difference detection on the second signal and a time signal of a satellite to obtain a comparison signal. And the aging module and the temperature module respectively carry out aging compensation and temperature compensation on the comparison signal and then send the comparison signal to the adjusting module. And the adjusting module is used for converting the comparison signal into an adjusting signal and sending the adjusting signal to the to-be-tested high-stability crystal oscillator, and is used for adjusting the output frequency of the high-stability crystal oscillator. The frequency accuracy and the long-term frequency stability of the high-stability crystal oscillator are effectively improved by combining Kalman filtering, aging compensation, temperature compensation, PID (Proportion Integration Differentiation) adjustment and other technologies.

A low-phase noise class-D voltage-controlled oscillator based on a broadband harmonic shaping technology comprises a head resonance unit, an LC resonance unit composed of a first inductance unit, a second inductance unit and a first capacitance unit, a negative resistance unit, a variable capacitance unit, an array capacitance unit and an output unit. The output end of the head resonance unit is connected with one end of the first inductance unit, the other end of the first inductance unit is connected with one end of the negative resistance unit, the other end of the negative resistance unit is connected with the first capacitor unit, the first capacitor unit is connected with the variable capacitor unit, and the variable capacitor unit is connected with one end of the array capacitor unit. The other end of the array capacitor unit is connected with one end of the second inductor unit, the other end of the second inductor unit is grounded, two input ends of the output unit are connected with the variable capacitor unit, and two output ends of the output unit serve as output ports of the voltage-controlled oscillator.

This disclosure is directed to a Voltage-Controlled Oscillator (VCO) with improved phase noise compared to other VCOs. The VCO may include a first cell and a second cell separated by common-mode (CM) isolation circuitry to reduce an amplitude of CM noise at an output signal. The CM isolation circuitry may inductively couple the first cell to the second cell for generating the output signal based on a resonant frequency range including resonant frequencies of the CM isolation circuitry, the first cell, and the second cell. As such, the first cell and the second cell may each include a portion of an entirety of the CM noise. In some cases, the portions of the CM noise on the first cell and / or the second cell may improve a signal to noise ratio of the output signal.

The present invention provides a voltage-controlled oscillation circuit. The voltage-controlled oscillation circuit comprises an LC resonant cavity and a negative resistance network; the negative resistance network comprises a first transistor, a second transistor, a first feedback unit, and a second feedback unit which are symmetrically arranged; the LC resonant cavity comprises multiple stages of resonant units connected in series; the first resonant access end of the LC resonant cavity is connected to the base electrode or the gate electrode of the first transistor; a second resonant access end is connected to the base electrode or the gate electrode of the second transistor; the first feedback unit is arranged between the collector electrode and the base electrode of the first transistor or between the drain electrode and the gate electrode of the first transistor; the second feedback unit is arranged between the collector electrode and the base electrode of the second transistor or between the drain electrode and the gate electrode of the second transistor; the feedback units are each composed of an active transistor. The present invention solves the problem of being difficult in achieving a frequency adjustment range and low-phase noise performance of a voltage-controlled oscillator, and outputs various frequency division signals while obtaining better phase noise performance.

The invention relates to the technical field of integrated circuit design, and discloses a crystal oscillation circuit and a crystal oscillator, and the crystal oscillation circuit comprises a core oscillation circuit which is configured to output oscillation voltage; the voltage amplitude detection circuit is connected with the core oscillation circuit and is configured to detect the amplitude of the oscillation voltage and output direct current voltage according to the amplitude of the oscillation voltage; the first bias circuit is respectively connected with the voltage amplitude detection circuit and the core oscillation circuit and is configured to output a first bias current according to the direct current voltage; the second bias circuit is connected with the core oscillation circuit and is configured to output a second bias current according to the temperature change; wherein the first bias current and the second bias current act on the core oscillation circuit and provide bias current for the core oscillation circuit. According to the crystal oscillation circuit, the circuit power consumption after crystal oscillation starting can be reduced under the condition of realizing rapid crystal oscillation starting.

An even harmonic multiplier employing complementary current reuse is disclosed. The even harmonic multiplier employs supply voltage and current density scaling to reduce power consumption. Further, by using complimentary NMOS and PMOS transistors, the even harmonic multiplier achieves high areal efficiency. Current reuse causes a reduction in noise at the first harmonic, as the corresponding first harmonic currents from the NMOS and PMOS transistors are in opposite, i.e., canceling, directions. Complementary current reuse is now feasible, as the performance of PMOS transistors at current process nodes is similar to those of NMOS transistors, with appropriate sizing leading to approximately equivalent transconductances. Multiple even harmonic multiplier configurations are possible, with many using transformer circuits at the input and / or the output. The resultant even harmonic multipliers find ready application in millimeter wave radio frequency receivers. The most common even harmonic multiplier is a frequency doubler, which produces a strong second harmonic signal.

The invention relates to a class-C voltage-controlled oscillator with negative-pressure substrate bias and a use method thereof. Aiming at the problem that a traditional C-type voltage-controlled oscillator is difficult to start, the C-type voltage-controlled oscillator provided by the scheme adopts different circuits to simultaneously control the grid voltage and the substrate voltage of the cross-coupled pair transistors, so that the transistors are effectively prevented from entering a linear region, and the C-type voltage-controlled oscillator is quickly started and stably works in a C-type oscillation mode. The circuit structure of the scheme comprises an NMOS (N-channel Metal Oxide Semiconductor) cross coupling circuit, a PMOS (P-channel Metal Oxide Semiconductor) cross coupling circuit, an LC resonant cavity circuit, an amplitude detection circuit, a Schmidt signal processing circuit and a negative voltage charge pump circuit. Wherein the Schmidt signal processing circuit and the negative voltage charge pump circuit rapidly process an initial oscillation signal and provide negative voltage required by the system, and a substrate of the NMOS cross coupling tube is biased. According to the scheme, the design structure is simple, the tuning range is wide, and a new thought is provided for research and design of quick start of the C-type voltage-controlled oscillator.

Provided is a Marchand balun and a frequency multiplier including the same. The Marchand balun may include transmission lines and slot lines extending to be proximate to the transmission lines. The transmission lines may include feeding transmission lines and coupled transmission lines connected to the feeding transmission lines. The slot lines may include near-distance slot lines provided to be adjacent to the feeding transmission lines, and far-distance slot lines extending in a direction away from the near-distance slot lines. The feeding transmission lines may be provided to be adjacent to the near-distance slot lines.

In an example, a system includes a first transistor having a first terminal coupled to a current mirror and a control terminal coupled to a first current source and a resistor. The system includes a second transistor having a first terminal coupled to the current mirror, a second terminal coupled to a second terminal of the first transistor, and a control terminal coupled to the resistor and a second current source. The system includes a third transistor having a first terminal coupled to a voltage terminal, a second terminal coupled to the control terminal of the second transistor, and a control terminal coupled to the first terminal of the second transistor. The system includes a fourth transistor having a control terminal coupled to the current mirror, first and second terminals coupled to one another and to the second terminal of the first transistor.

The invention provides a voltage-controlled oscillator, a phase-locked loop and a temperature compensation method for the frequency of the voltage-controlled oscillator, and the voltage-controlled oscillator comprises an adjustable capacitor and a temperature compensation circuit. The first end of the adjustable capacitor is connected with control voltage, the second end of the adjustable capacitor is connected with the temperature compensation circuit, and the temperature compensation circuit provides temperature compensation voltage changing along with temperature for the adjustable capacitor. According to the technical scheme, the temperature compensation circuit is used for providing the temperature compensation voltage for the voltage-controlled oscillator of the phase-locked loop, so that in and Ip of a charge pump Cp of the phase-locked loop can still be kept approximately equal when the temperature is changed and the control voltage provided by the loop filter of the phase-locked loop is kept unchanged, and the control voltage of the phase-locked loop is kept constant. Compared with a voltage-controlled oscillator in the related technology, the circuit structure in the application can reduce periodic jitter introduced in the PLL by temperature change.

A reference system is provided for generating a clock signal with a tunable noise pedestal for driving a signal generator. The reference system includes a reference source configured to generate a reference signal and a multiplier chain, including a noise pedestal generator. The noise pedestal generator includes a noise pedestal attenuator configured to attenuate the reference signal to degrade a noise floor of the reference signal, a VGA configured to adjust the attenuated reference signal to a desired signal level, a bandpass filter configured to filter out excess noise from the adjusted reference signal to form a noise pedestal, and a switch arrangement configured to selectively input the reference signal to a first path including the noise pedestal attenuator and the VGA, and a second path bypassing the noise pedestal attenuator and the VGA. The clock signal includes the noise pedestal when the first path is selected.

Various embodiments provide apparatuses, systems, and methods for resonant rotary clocking for die-to-die (D2D) communication in a multi-die system. A base die may include a resonant ring structure to form a plurality of rotary traveling wave oscillators (RTWOs) coupled to one another in a rotary oscillator array (ROA). The ROA may provide synchronized clock signals at deterministic phase points that are tapped from the resonant ring structure. Multiple dies may be coupled to the base die and may receive the tapped clock signals from respective tap points. The clock signals may be used for die-to-die communication and / or other purposes. Other embodiments may be described and claimed.

The present disclosure provides a three-level rectification DC / DC converter including primary and secondary circuits and a resonant tank circuit. A voltage between two primary terminals is a first voltage. The secondary circuit includes two clamping switches, a switch bridge arm, and a capacitor bridge arm. The switch bridge arm includes four switches serially connected. The two clamping switches are connected in series between a node between the first and second switches and a node between the third and fourth switches. Two secondary terminals are respectively connected between the second and third switches and connected between two output capacitors of the capacitor bridge arm. A node between the two clamping switches is connected between the two output capacitors. The second and third switches are at least in an on state for a preset time length after falling and rising edges in a period of the first voltage respectively.

Circuits and methods for multi-phase clock generators and phase interpolators are provided. The multi-phase clock generators include a delay line and multi-phase injection locked oscillator. At each stage of the multi-phase injection locked oscillator, injection currents are provided from a corresponding stage of the delay line. Outputs of the multi-phase injection locked oscillator and provided to mixers which produce inputs to an operational transconductance amplifier which provides feedback to the delay line and the multi-phase injection locked oscillator. The phase interpolator uses a technique of flipping certain input clock signals to reduce the number of components required while still being able to interpolate phase over 360 degrees and to reduce noise.

To provide a temperature-compensated crystal oscillator capable of coping with miniaturization and limitation of thermal capacity, a method of manufacturing the same, and an electronic apparatus equipped with the temperature compensated crystal oscillator.SOLUTION: A temperature-compensated crystal oscillator 30 includes: a crystal resonator 31; a temperature-compensated oscillation chip 32 with a built-in temperature sensor; an insulation layer 33; and a first electrode structure 34. The crystal resonator includes: a vibration element 311; and an airtight packaging structure 312 packaged on an outer periphery of the vibration element. The temperature-compensated oscillation chip 32 is disposed on one side of the hermetic sealed structure. The insulation layer covers at least one side of the temperature compensation oscillation chip and the airtight packaging structure, and includes a first via hole 331 formed with a conductive material and a heat insulation cavity 36 including a sealed cavity or a semi-sealed cavity. The insulation cavity has gas or is in a vacuum state. The first electrode structure is disposed on the insulating layer and electrically connected to the temperature-compensated oscillation chip through the conductive material in the first via hole.SELECTED DRAWING: Figure 3

Mixer circuitry can include a first pair of transistors coupled to a first tail node and configured to receive a local oscillator signal, a second pair of transistors coupled to a second tail node and configured to receive the local oscillator signal, a first digital-to-analog converter, a second DAC coupled between the first DAC and of the first pair of transistors, and a third DAC coupled between the first DAC and the second pair of transistors. During a first phase, control circuitry can sweep the first DAC to trim a first and / or other odd order local oscillator feedthrough. During a second phase, the control circuitry can sweep the second DAC to trim a second and / or other even order local oscillator feedthrough. During a third phase, the control circuitry can sweep the second and third DACs to reject signals associated with a second harmonic conversion gain of the mixer circuitry.

The invention discloses a frequency adjustment control method and device for an ultrahigh frequency wafer, and relates to the technical field of semiconductor production. Determining a target area of the coated wafer, dividing the target area to obtain a plurality of to-be-detected areas, and obtaining the area vibration frequency of the to-be-detected areas; if the area vibration frequency is larger than a preset frequency threshold value, the area to be detected is judged to be an abnormal area, a feature code is added, and the area vibration frequency and the feature code are uploaded to a feature database; working parameters of the laser etching equipment are determined according to the feature database, and the abnormal area is etched according to the working parameters; the vibration frequency of each to-be-detected area is detected, the area with the abnormal vibration frequency is identified, a feature code is added to the area, the area vibration frequency and the feature code are uploaded to a feature database, rapid identification and intelligent marking of the abnormal area are achieved, and data support is provided for subsequent laser etching equipment working parameter optimization. And the accuracy and the high efficiency of the etching operation are ensured.

A magnetron and microwave heating device, wherein the magnetron includes a tube core (21), a first tube shell (21a), a second tube shell (21b), an output ceramic (22), an antenna cap (23), and an antenna (24), wherein the first tube shell (21a), the tube core (21), the second tube shell (21b), the output ceramic (22), and the antenna cap (23) are connected in sequence, and the antenna (24) enters the tube core (21), passes through the second tube shell (21b) and the output ceramic (22), and enters the antenna cap (23), a height H1 of the second tube shell (21b) relative to the tube core (21) is 14 mm or less, and a ratio of the height H1 of the tube core (21) to the height H2 of the output ceramic (22) is within a range of 0.4 to 2.3.

A vibrator device includes a semiconductor substrate which includes a first surface and a second surface and is provided with a through hole penetrating the first surface and the second surface, a semiconductor circuit which is disposed at the second surface side and includes a conductive layer exposed in the through hole, a first interconnection which is disposed on an inner circumferential surface of the through hole and is electrically coupled to the conductive layer, a second interconnection which is disposed on the first surface and includes an interconnection layer smaller in surface roughness than the first interconnection and a covering layer covering the interconnection layer, and a vibrator which is located at the first surface side and is bonded to the second interconnection via a bonding member.