1228results about "Amplifier input/output impedence modification" patented technology

The invention relates to the technical field of wireless communication, and provides a radio frequency low-noise amplifier which comprises an input matching module, a power amplification module, an output matching module, an RC attenuation module and an RC feedback module, the first end of the first inductor serves as the input end of the output matching module, the first end of the first inductor is connected with the output end of the power amplification module, the control end of the switch and the first end of the first adjustable resistor, and the second end of the first inductor is connected with the first end of the second inductor and the first end of the third capacitor. The output end of the switch is connected with the first end of the first capacitor and the first end of the second capacitor. The second end of the second capacitor is connected with the second end of the first adjustable resistor and the second end of the second inductor and used for being connected with a power supply. The second end of the first capacitor is connected with the second end of the third capacitor and serves as the output end of the output matching circuit. The radio frequency low-noise amplifier is adjustable in gain, low in noise and good in linearity performance.

The invention relates to the technical field of wireless communication, and provides a radio frequency power amplifier and a radio frequency chip, the radio frequency power amplifier comprises an input matching circuit, a first-stage amplifier, a first inter-stage matching circuit, a second-stage amplifier, a second inter-stage matching circuit, a third-stage amplifier and an output matching circuit which are electrically connected in sequence; the radio frequency power amplifier further comprises a control module, a direct current power supply module, a first bias circuit, a second bias circuit and a third bias circuit. The first biasing circuit comprises a power detection network and a switch control circuit; the first input end of the power detection network serves as the first input end of the first bias circuit, the second input end of the power detection network serves as the second input end of the first bias circuit, and the power detection network is used for receiving a radio frequency signal, converting the radio frequency signal into a control voltage in a detection mode and outputting the control voltage to the input end of the switch control circuit. The control switch controls connection or disconnection of the circuit. According to the invention, the robustness of power can be improved.

The embodiment of the invention provides a closed-loop control method for power driving and protection, and the method comprises the steps: constructing a voltage feedback type circuit through a high-speed operational amplifier, and forming a closed-loop gain structure through a feedback network of the voltage feedback type circuit; the load current of the output end of the voltage feedback type circuit is monitored in real time, and when the load current exceeds a first set threshold value, a protection mechanism is triggered to turn off the output stage; the power-on surge current is limited through the soft start control circuit; phase information of a load reflection coefficient is obtained, an inductance / capacitance combination of the variable dynamic impedance matching network is selected according to phase information table look-up, inductance / capacitance parameters are switched through a relay, and the transmission standing-wave ratio between the power amplifier and a load is optimized; monitoring the temperature of the radiating fin of the power tube, and dynamically adjusting the resistance value of the feedback network; and performing cooperative control of short-circuit protection, over-temperature protection and surge suppression according to the priority. According to the embodiment of the invention, the performance bottleneck in a load fluctuation scene is broken through.

The utility model relates to a radio frequency power amplification circuit with a harmonic suppression function and a radio frequency chip. The radio frequency power amplification circuit comprises an input matching unit, a first-stage power amplification unit, a first-stage bias unit, a first-stage power supply unit, an inter-stage matching unit, a second-stage power amplification unit, a second-stage bias unit, a second-stage power supply unit and an output matching unit. According to the utility model, the LC type trap circuits are designed and used in the power supply unit and the inter-stage matching unit, so that secondary, tertiary and high-order harmonic suppression is realized in the radio frequency power amplification circuit; meanwhile, based on LC circuit structures in the power supply unit and the inter-stage matching unit, the inter-stage matching bandwidth is widened, and the linearity of the multi-stage power amplification unit is improved.

Aspects of this disclosure relate to acoustic wave filters with bulk acoustic wave resonators. An acoustic wave filter can include a first bulk acoustic wave resonator configured to excite an overtone mode as a main mode and a second bulk acoustic wave resonator having a fundamental mode as a main mode.

Methods and devices to improve nonlinearity performance of low noise amplifiers (LNAs) are disclosed. The described methods and devices reduce the capacitive loading of the LNA amplifying devices on the bypass path of the LNAs when operating in the bypass mode. This is performed by decoupling the active devices from ground to put the amplifying devices in a floating state, thus minimizing the impact of the gate-source capacitances of the amplifying devices on the overall linear performance of the LNA operating in the bypass mode.

The invention relates to the technical field of radio frequency integrated circuits, in particular to a harmonic suppression power amplifier combining a matching network and a feed network, which comprises a transistor, an input matching module, an output matching module, a stabilizing module and a bias module, the input matching module comprises a first parallel resonance unit, the first parallel resonance unit is used for second harmonic suppression, the output matching module comprises a series resonance unit and a second parallel resonance unit, the series resonance unit is used for resonating at a second harmonic frequency and performing low-impedance grounding on the second harmonic, and the second parallel resonance unit is used for resonating at a second harmonic frequency and performing low-impedance grounding on the second harmonic. The second parallel resonance unit is used for resonating at a third harmonic frequency and forms a high-impedance open circuit for the third harmonic, the output matching module is coupled to a drain electrode of the transistor, and the bias module comprises a grid bias sub-module and a drain bias sub-module. The grid bias sub-module is coupled to a connection node of the input matching module and the grid of the transistor, the drain bias sub-module is coupled to the output matching module, and the bias voltage of the transistor is jointly determined by the grid bias sub-module and the drain bias sub-module. The power amplifier has the effect of improving the efficiency level of the power amplifier while realizing harmonic suppression optimization.

The invention discloses an ultra-wideband high-linearity power amplifier with a negative feedback structure. The ultra-wideband high-linearity power amplifier comprises an input matching network, a driving-stage amplifying circuit, an inter-stage matching network, a power-stage amplifying circuit, an output matching network, a negative feedback RLC (Radio Link Control) network and a self-adaptive biasing circuit, an input radio-frequency signal is transmitted to the driving-stage amplification circuit through the input matching network for primary amplification, transmitted to the power-stage amplification circuit through the inter-stage matching network for secondary amplification and output through the output matching network, and the driving-stage amplification circuit comprises a first transistor and a second transistor. The power level amplification circuit comprises a third transistor and a fourth transistor; the self-adaptive bias circuit is used for providing self-adaptive bias voltage for the first transistor and the third transistor; the negative feedback RLC network is used for controlling the gain and bandwidth of the amplifier and comprises a driving-stage negative feedback network and a power-stage negative feedback network. The working bandwidth of the power amplifier can be widened, and the gain, the output power and the linearity of the amplifier can be improved.

The invention provides a low-noise amplification circuit, a radio frequency front-end module and an electronic terminal.The low-noise amplification circuit comprises an input matching adjustment circuit, a common-source amplification circuit, a first inductor, an inter-stage feedback circuit, a common-gate amplification circuit, an input and output feedback circuit, an output matching adjustment circuit and an output attenuation circuit; the common-source amplification circuit comprises at least two first signal amplification units; each first signal amplification unit comprises a first field effect transistor; the common-gate amplification circuit comprises at least two second signal amplification units; and each second signal amplification unit comprises a second field effect transistor. According to the low-noise amplification circuit, transconductance nonlinearity of devices under different bias signals can be mutually counteracted, so that the linearity fluctuation of the low-noise amplification circuit at different temperatures is optimized, and the linearity of the low-noise amplification circuit is kept basically not to change along with the temperature change.

The present application discloses a low-cost and high-performance radio-frequency amplifier, comprising an input stage circuit, a common-gate stage circuit, and an output load circuit. The input stage circuit implements conversion from a single-ended signal to a differential signal, implements input impedance matching, and converts an inputted radio-frequency voltage signal into a radio-frequency current signal. The input stage circuit comprises a first three-coil transformer, consisting of a primary coil, a secondary coil, and a third coil. The common-gate stage circuit transmits the radio-frequency current signal outputted by the input stage circuit to the output load circuit, increases the withstand voltage and equivalent output impedance of the circuit, and implements gain control in at least two modes. The output load circuit converts the radio-frequency current signal from the common-gate stage circuit into a radio-frequency voltage signal, implements conversion from a differential signal to a single-ended signal, and outputs an amplified radio-frequency voltage signal. The present application provides a radio-frequency amplifier having a small size, broadband matching, high linearity, a large dynamic range, and low design complexity.

The utility model relates to the technical field of wireless communication, and provides a low noise amplifier and a radio frequency chip, comprising an input matching circuit, a power amplification circuit and an output matching circuit which are electrically connected in sequence, the power amplification circuit comprises a first MOS tube and a second MOS tube, the grid electrode of the first MOS tube is used as the input end of the power amplification circuit and is connected to the output end of the input matching circuit, the source electrode of the first MOS tube is grounded, the drain electrode of the first MOS tube is connected with the source electrode of the second MOS tube, and the drain electrode of the second MOS tube is used as the output end of the power amplification circuit and is connected to the input end of the output matching circuit; the low-noise amplifier further comprises an inductance switching circuit capable of being combined into different inductance values, and the source electrode of the first MOS tube is connected with the inductance switching circuit in series and then is grounded. According to the low-noise amplifier, switching of various inductance values of the source electrode inductor can be achieved, and higher flexibility is brought to compromise of indexes of low-gain gears.

According to the radio frequency power amplifier and the radio frequency chip provided by the utility model, the input end of the input matching circuit is used for receiving a radio frequency signal, the output end of the input matching circuit is connected with the input end of the power amplifier, and the first end of the filter circuit is used for connecting an external power supply voltage; the output end of the power amplifier is connected with the second end of the filter circuit, the first end of the trap circuit and the input end of the strong coupling transformer, the second end of the trap circuit is grounded, the output end of the strong coupling transformer is used for outputting radio frequency signals, the first end of the high-order trap circuit is connected with the output end of the strong coupling transformer, and the second end of the high-order trap circuit is grounded. And the second end of the high-order trap circuit is grounded. Compared with the prior art, the radio frequency power amplifier has the advantages that the radio frequency matching area is effectively reduced, the space and the cost of the radio frequency power amplifier are saved, and meanwhile, the efficiency and the performance of the radio frequency power amplifier are effectively improved through the structural design of the strong coupling transformer.

The invention discloses a multi-mode ultra-wideband continuously adjustable microwave power amplifier circuit, and belongs to the technical field of microwave integrated circuits. Switching between the ultra wide band and multiple communication frequency bands can be realized by adjusting the control voltage and the drain electrode power supply circuit of the pre-stage circuit, and the center frequency of the communication frequency bands can be independently designed. And the center frequency of the communication frequency band can be changed by changing the values of the capacitor and the inductor in the continuous adjustable branch knot and the inductor in the drain power supply circuit of the pre-stage circuit. Through on-chip voltage and external voltage switching control, mode switching of the ultra wide band and multiple communication frequency bands can be realized, and the problems that the ultra wide band and the communication frequency bands of the high-performance power amplifier can be switched and the communication frequency is continuously adjustable are solved.

The embodiment of the invention provides a radio frequency power amplifier and a radio frequency front-end module. The radio frequency power amplifier comprises a first radio frequency amplification circuit, a second radio frequency amplification circuit, a first transformer, a second transformer and a coupler, the first radio frequency amplification circuit is used for outputting a first radio frequency signal, and the second radio frequency amplification circuit is used for outputting a second radio frequency signal; the first transformer comprises a first coil and a second coil, and the second transformer comprises a third coil and a fourth coil; the first coil is connected with the first radio frequency amplification circuit, and the second coil is coupled with the first coil to output a first coupling signal corresponding to the first radio frequency signal; the third coil is connected with the second radio frequency amplification circuit, and the fourth coil is coupled with the third coil to output a second coupling signal corresponding to the second radio frequency signal; the coupler is used for performing power synthesis on the first coupling signal and the second coupling signal to output a synthesized signal. The radio frequency power amplifier and the radio frequency front-end module have better bandwidth performance.

The invention provides a millimeter wave digital power amplifier based on a serial transmission line balun synthesis network, and belongs to the technical field of millimeter wave digital power amplifiers. According to the millimeter wave digital power amplifier, firstly, a driving power distribution network based on a bridge and a transformer is adopted, and radio frequency power is subjected to differential conversion and then input into a digital power amplifier unit array; secondly, the digital power amplifier unit adopts a differential Cascode structure with a neutralizing capacitor, so that the gain and the output impedance of the digital power amplifier unit can be effectively improved; finally, a synthesis network based on a series transmission line balun is adopted, the synthesis network can realize active load modulation optimization of the digital power amplifier, the impedance matching condition of the digital power amplifier under the maximum and partial rollback output power levels is improved and balanced, and the overall efficiency is improved.

The invention relates to a terahertz high-power power amplifier assembly, which belongs to the field of electronic devices and comprises a synthesis network consisting of a synthesis network upper cavity and a synthesis network lower cavity, and a small signal amplification module, a medium-power amplification module, a driving-stage power amplifier module, a final-stage power amplifier module and a detection module are arranged on the back surface of the synthesis network lower cavity. An E-plane waveguide directional coupler is arranged in the synthesis network, the small signal amplification module, the medium-power amplification module, the driving-stage power amplification module, the final-stage power amplification module and the E-plane waveguide directional coupler are electrically connected in sequence, and a port of the E-plane waveguide directional coupler is electrically connected with the detection module; a waveguide tube is arranged in the installation position of each module in the synthesis network, and the modules are electrically connected through the waveguide tubes. According to the invention, each stage of amplifier is modularly designed, so that the isolation degree among devices of a link can be increased, and the self-excitation risk caused by space radiation is reduced. And the testability of a single module is improved, and the troubleshooting cost and time are reduced.

Apparatus and methods for power amplifiers with broadband matching networks are disclosed. In certain embodiments, a mobile device includes a transceiver that generates a radio frequency input signal, and a front-end system including a compound semiconductor die and a silicon switch die. The compound semiconductor die includes a power amplifier including one or more power amplifier stages that amplify the radio frequency input signal to generate a radio frequency output signal. The silicon switch die includes a band selection switch that receives the radio frequency output signal. The compound semiconductor die and the silicon switch die each include at least one controllable impedance for providing a bandwidth adjustment to the power amplifier.

The invention discloses a high-linearity low-noise amplifier based on harmonic suppression, relates to the field of communication and the technical field of electronic devices, and is used for solving the problem that the noise coefficient of an existing Darlington structure is large. Comprising a noise matching and input matching network, a linearity enhancement structure, a negative feedback structure and a pre-distortion structure. Wherein the linearity enhancement structure at least comprises a first amplification transistor and a second amplification transistor which are arranged in parallel, and is used for improving the linearity of the circuit through harmonic cancellation; the negative feedback structure is connected with the noise matching and input matching network and the pre-distortion structure and is used for expanding circuit bandwidth and optimizing output matching; the pre-distortion structure is used for stabilizing the bias voltage of the third amplification transistor. According to the invention, the linearity of the whole circuit is effectively improved, and the source microstrip lines of the two circuits are utilized to improve the minimum noise matching and improve the noise performance. Noise is reduced, linearity is improved, low-frequency gain is suppressed, and bandwidth of the whole circuit is improved.

An electronic device may include wireless circuitry with a processor, a transceiver circuit, a front-end module, and an antenna. The front-end module may include amplifier circuitry such as a low noise amplifier for amplifying received radio-frequency signals. The amplifier circuitry may include non-linearity suppression circuitry that suppresses or reduces non-linear behavior of components such as a core amplification transistor and a degeneration inductor within the amplifier circuitry. The non-linearity suppression circuitry may include an intermodulation distortion suppression circuit having an auxiliary amplification transistor. The non-linearity suppression circuitry may include a frequency-selective filter coupled to the degeneration inductor.

The invention relates to a buffer and an integrated circuit. The buffer includes: an operational amplifier; the first end of the voltage-voltage feedback network is coupled to the positive phase / negative phase input end of the operational amplifier; the first end of the isolation resistor is coupled to the output end of the buffer; the first group of switches and the second group of switches are controlled to be closed when the first capacitive load is driven, the second group of switches are disconnected when the second capacitive load is driven, and the first group of switches are disconnected and the second group of switches are closed when the second capacitive load is driven; in the first load, the output end of the operational amplifier is coupled to the output end of the buffer through at least one switch in the first group of switches, and the second end of the voltage-voltage feedback network is coupled to the output end of the buffer through at least one switch in the first group of switches. In the second load, the output end of the operational amplifier is coupled to the second end of the isolation resistor through at least one switch in the second group of switches, and the second end of the voltage-voltage feedback network is coupled to the output end of the operational amplifier through at least one switch in the second group of switches.

Apparatuses and systems implementing an amplifier module are described. The amplifier module can include a substrate. A driver amplifier die, a splitter network, an output amplifier die, a bias controller, and a combiner network can be coupled to the substrate. The driver amplifier die can be configured to receive an input radio frequency (RF) signal. The splitter network can be configured to split an intermediate RF signal outputted from the driver amplifier die into first and second RF signals. The output amplifier die can be configured to receive the first and second RF signals. The bias controller can be configured to bias the driver amplifier die and the output amplifier die. The combiner network can be configured to combine first and second outputs of the output amplifier die to generate an output RF signal and terminate at least one harmonic of the output amplifier die's output impedance.

A Doherty power amplifier (PA) includes a main amplifier, an auxiliary amplifier, a first inductor coupled between an output of the main amplifier and a first node, a second inductor coupled between an output of the auxiliary amplifier and the first node, and a third inductor coupled between a supply rail and the first node. The Doherty PA also includes a first capacitor coupled between the output of the main amplifier and a ground, a second capacitor coupled between the output of the auxiliary amplifier and the ground, and an impedance matching circuit coupled between the output of the auxiliary amplifier and an output of the Doherty PA.

A hybrid coupler has a first port, a second port, a third port, and a fourth port to which a load is connected. An input signal distributor distributes a first input signal that is a radio frequency signal into a second input signal and a third input signal. The second input signal is inputted to a balanced amplifier. The balanced amplifier outputs two amplified radio frequency signals with a phase difference of 90° from each other from two output ends, one of which is coupled to the first port and another one of which is coupled to the second port. The control amplifier amplifies the third input signal and outputs the amplified third input signal from an output end. The output end of the control amplifier is coupled to the third port without any circuit component affecting impedance matching disposed in between.

The invention provides a broadband high-efficiency filtering power amplifier and an output matching network design method thereof, and belongs to the technical field of wireless communication. The broadband high-efficiency filtering power amplifier comprises a power amplifier main body and an output matching network connected with the output end of the power amplifier main body; the output matching network structure is based on a three-mode transverse coupling filter; the output matching network comprises a plurality of transmission lines which are directly connected to form a first sub-network, a second sub-network, a third sub-network and a fourth sub-network; the structures of the first and second sub-networks are configured to be equivalent to a [lambda] / 4 transmission line having a harmonic impedance control function. Fundamental wave matching, harmonic control and filtering functions are integrated by adopting an output matching network structure: fundamental wave matching with a steep edge is realized by utilizing a three-mode transverse resonator, secondary harmonic impedance is controlled to a high-efficiency area by adopting an equivalent T-shaped lambda / 4 line, and while wide-bandwidth work is realized, the harmonic control and filtering functions are realized. And high efficiency and excellent harmonic suppression capability are realized.

A radio frequency (RF) power amplifier based on transformer matching is provided. The RF power amplifier includes: a first-stage amplification circuit configured with an input terminal and an output terminal, wherein the output terminal of the first-stage amplification circuit is configured to be connected to one terminal of a main coil of a first transformer; the first transformer configured to include the main coil and a secondary coil, wherein one terminal of the secondary coil is grounded and the other terminal of the secondary coil is connected to a medium-low power mode input terminal of a power switch; the second-stage amplification circuit configured with an input terminal for receiving the amplified RF signal from the first-stage amplification circuit, wherein an output terminal of the second-stage amplification circuit is configured to be connected to a high power mode input terminal of the power switch.

The invention relates to the technical field of radio frequency, and discloses a differential phase self-calibration single-power-supply variable gain distributed balun circuit which comprises a differential phase calibration module, an ultra-wideband matching gain adjustment module and a distributed balun amplifier core module connected with the differential phase calibration module and the ultra-wideband matching gain adjustment module. On the basis of a traditional differential-to-single-ended distributed balun circuit, the defect that a traditional distributed balun needs multiple sets of power voltages is overcome by only needing one set of power voltages, and meanwhile, the distributed balun circuit provided by the invention also has a digital gain calibration function, so that the balun has a higher degree of freedom in use. In addition, a differential signal self-calibration circuit is further used, and it is guaranteed that the phase error of balun differential input is minimized.

The utility model provides a radio frequency power amplifier and a radio frequency chip. The radio frequency power amplifier comprises an amplifier, a first adjustable attenuation circuit, a second adjustable attenuation circuit and a first capacitor. Compared with the prior art, the first adjustable attenuation circuit and the second adjustable attenuation circuit are additionally arranged at the input end of the amplifier, input attenuation protection is achieved by adopting a simple circuit structure, the number of used devices is small, and the chip area cost can be effectively saved. Meanwhile, the input attenuation amount of the first adjustable attenuation circuit and the second adjustable attenuation circuit can be flexibly adjusted through a digital control bit and an analog control voltage, and free adjustment of different attenuation amounts at different temperatures is achieved; meanwhile, the input end of the amplifier is simple in structure, complex feedback loop control is avoided, the response speed is higher, and deterioration of the radio frequency performance of an amplifier channel is smaller.

A broadband Doherty power amplifier is provided, which includes a power divider, a carrier power amplifier circuit, a peak power amplifier circuit, and a load modulation network. The carrier power amplifier circuit includes a carrier input matching circuit, a carrier power amplifier, and a carrier output matching circuit. The peak power amplifier circuit includes a peak input matching circuit, a peak power amplifier and a peak output matching circuit. A resistance value of a system load is ZL. An output impedance of the carrier output matching circuit is Zm and meets Zm=ZL(n+1). An output impedance of the peak output matching circuit is Zp and meets Zp=ZL(n+1) / n. The load modulation network is configured to set an impedance of a combination point to be ZQ, whose resistance value is ZL. A method of implementing a broadband Doherty power amplifier is further provided.

A bias circuit of a power amplifier includes a first part circuit, a second part circuit and a power supply, in which the power supply is connected with a power supply end of the first part circuit; two ends of the first part circuit are connected in parallel with two ends of the second part circuit, and after parallel connection one end of a parallel circuit is connected with a gate of the first transistor of the power amplifier in a signal amplification circuit; the first part circuit is configured to provide a first bias voltage, and the second part circuit is configured to provide a second bias voltage; the two bias voltages are superimposed to provide a stable bias voltage; and an impedance of the bias circuit is in a preset range of the impedance.

The invention discloses a high-power modular radio frequency power amplifier capable of realizing wide-range power regulation. The high-power modular radio frequency power amplifier comprises a radio frequency load RL and m power amplification modules, the m power amplification modules are connected in parallel at a direct current side and are connected with an adjustable direct current bus voltage source; and the m power amplification modules are connected in parallel at the alternating current side and are superposed at the alternating current side. The output current of all the power amplification modules is transmitted to the radio frequency load RL; each power amplification module comprises a high-frequency switch power amplification unit, an LCL resonance network and an isolation transformer. According to the invention, through the configuration of the number of the power amplification modules and the adjustable cooperative control of the DC bus voltage source, the continuous adjustment of the output power is realized, meanwhile, the stable operation of each power amplification module under the resonance condition is ensured, the zero-voltage switching state is maintained, and the overall operation efficiency of the architecture and the adaptability of the radio frequency load are effectively improved.