659results about "Amplifier input/output impedence modification" patented technology

The invention relates to the technical field of wireless communication, and provides a radio frequency low-noise amplifier which comprises an input matching module, a power amplification module, an output matching module, an RC attenuation module and an RC feedback module, the first end of the first inductor serves as the input end of the output matching module, the first end of the first inductor is connected with the output end of the power amplification module, the control end of the switch and the first end of the first adjustable resistor, and the second end of the first inductor is connected with the first end of the second inductor and the first end of the third capacitor. The output end of the switch is connected with the first end of the first capacitor and the first end of the second capacitor. The second end of the second capacitor is connected with the second end of the first adjustable resistor and the second end of the second inductor and used for being connected with a power supply. The second end of the first capacitor is connected with the second end of the third capacitor and serves as the output end of the output matching circuit. The radio frequency low-noise amplifier is adjustable in gain, low in noise and good in linearity performance.

The invention provides a low-noise amplification circuit, a radio frequency front-end module and an electronic terminal.The low-noise amplification circuit comprises an input matching adjustment circuit, a common-source amplification circuit, a first inductor, an inter-stage feedback circuit, a common-gate amplification circuit, an input and output feedback circuit, an output matching adjustment circuit and an output attenuation circuit; the common-source amplification circuit comprises at least two first signal amplification units; each first signal amplification unit comprises a first field effect transistor; the common-gate amplification circuit comprises at least two second signal amplification units; and each second signal amplification unit comprises a second field effect transistor. According to the low-noise amplification circuit, transconductance nonlinearity of devices under different bias signals can be mutually counteracted, so that the linearity fluctuation of the low-noise amplification circuit at different temperatures is optimized, and the linearity of the low-noise amplification circuit is kept basically not to change along with the temperature change.

The present application discloses a low-cost and high-performance radio-frequency amplifier, comprising an input stage circuit, a common-gate stage circuit, and an output load circuit. The input stage circuit implements conversion from a single-ended signal to a differential signal, implements input impedance matching, and converts an inputted radio-frequency voltage signal into a radio-frequency current signal. The input stage circuit comprises a first three-coil transformer, consisting of a primary coil, a secondary coil, and a third coil. The common-gate stage circuit transmits the radio-frequency current signal outputted by the input stage circuit to the output load circuit, increases the withstand voltage and equivalent output impedance of the circuit, and implements gain control in at least two modes. The output load circuit converts the radio-frequency current signal from the common-gate stage circuit into a radio-frequency voltage signal, implements conversion from a differential signal to a single-ended signal, and outputs an amplified radio-frequency voltage signal. The present application provides a radio-frequency amplifier having a small size, broadband matching, high linearity, a large dynamic range, and low design complexity.

A Doherty power amplifier (PA) includes a main amplifier, an auxiliary amplifier, a first inductor coupled between an output of the main amplifier and a first node, a second inductor coupled between an output of the auxiliary amplifier and the first node, and a third inductor coupled between a supply rail and the first node. The Doherty PA also includes a first capacitor coupled between the output of the main amplifier and a ground, a second capacitor coupled between the output of the auxiliary amplifier and the ground, and an impedance matching circuit coupled between the output of the auxiliary amplifier and an output of the Doherty PA.

A radio frequency (RF) power amplifier based on transformer matching is provided. The RF power amplifier includes: a first-stage amplification circuit configured with an input terminal and an output terminal, wherein the output terminal of the first-stage amplification circuit is configured to be connected to one terminal of a main coil of a first transformer; the first transformer configured to include the main coil and a secondary coil, wherein one terminal of the secondary coil is grounded and the other terminal of the secondary coil is connected to a medium-low power mode input terminal of a power switch; the second-stage amplification circuit configured with an input terminal for receiving the amplified RF signal from the first-stage amplification circuit, wherein an output terminal of the second-stage amplification circuit is configured to be connected to a high power mode input terminal of the power switch.

A broadband Doherty power amplifier is provided, which includes a power divider, a carrier power amplifier circuit, a peak power amplifier circuit, and a load modulation network. The carrier power amplifier circuit includes a carrier input matching circuit, a carrier power amplifier, and a carrier output matching circuit. The peak power amplifier circuit includes a peak input matching circuit, a peak power amplifier and a peak output matching circuit. A resistance value of a system load is ZL. An output impedance of the carrier output matching circuit is Zm and meets Zm=ZL(n+1). An output impedance of the peak output matching circuit is Zp and meets Zp=ZL(n+1) / n. The load modulation network is configured to set an impedance of a combination point to be ZQ, whose resistance value is ZL. A method of implementing a broadband Doherty power amplifier is further provided.

Provided is a power amplifier system based on in-phase power synthesis, including an input port; an output port; a plurality of power amplification branches, each of the plurality of power amplification branches is connected to the input port, the plurality of power amplification branches include at least one main power amplification branch and at least one auxiliary power amplification branch, each of the plurality of power amplification branches is configured to amplify an input signal of a same phase received from the input port; and an in-phase synthesizer is connected between the plurality of power amplification branches and the output port, the in-phase synthesizer is configured to perform power synthesis on the amplified signal at the same phase output from each of the plurality of power amplification branches to obtain a synthesized output signal, and transmit the synthesized output signal to the output port for output.

The invention is suitable for the technical field of radio frequency front ends, and particularly relates to a low-noise amplifier and a radio frequency chip. The low-noise amplifier provided by the invention comprises an input switching circuit, an amplifying circuit and an output matching circuit which are electrically connected in sequence, the input switching circuit comprises a plurality of input matching units, and the plurality of input matching units are used for receiving radio frequency signals of different frequency bands respectively; the amplifying circuit comprises a first amplifying unit, a first inductor and a plurality of second amplifying units connected in parallel, the input ends of the second amplifying units serve as the input end of the amplifying circuit, and the input ends of the second amplifying units are connected with the output ends of the input matching units in a one-to-one correspondence mode. Compared with the prior art, the low-noise amplifier disclosed by the invention can be used for independently optimizing the input impedance of each input port, so that not only can the noise coefficient be optimized, but also the optimal gain and linearity performance can be obtained.

An RF amplifier includes a transistor, a first inductance element, a second inductance element, and a third inductance element. The transistor includes an output terminal, a reference terminal, and a control terminal for receiving an input signal. The first inductance element is connected between the reference terminal of the transistor and a second power supply. The second inductance element is negatively coupled with the first inductance element and connected between the output terminal and a first power supply. The third inductance element is positively coupled with one of the first inductance element and the second inductance element and negatively coupled with the other.

A Doherty amplifier includes: a carrier amplifier to amplify a first high frequency signal having a first higher harmonic and a second higher harmonic; a peak amplifier to amplify a second high frequency signal having the first higher harmonic and the second higher harmonic; a first series resonant circuit connected between an output end of the carrier amplifier and a ground, and configured to resonate at the frequency of the first higher harmonic; a second series resonant circuit connected between an output end of the peak amplifier and the ground, and configured to resonate at the frequency of the first higher harmonic; a first parallel resonant circuit configured to resonate at the frequency of the second higher harmonic; and a second parallel resonant circuit configured to resonate at the frequency of the second higher harmonic.

A transistor device package includes a component assembly comprising an interconnect structure, a transistor die having a front surface including gate, drain, and source terminal on a first surface of the interconnect structure, and one or more passive electrical components electrically coupled to the gate, drain, and / or source terminal by the interconnect structure. A thermally conductive flange is attached to a back surface of the transistor die, which is opposite the front surface, by a conductive adhesive. Respective patterns of the conductive adhesive are provided on the first surface of the interconnect structure, and least one of the respective patterns of the conductive adhesive provides an input, output, or ground signal path for the transistor device package. Related fabrication methods are also discussed.

Apparatuses, systems, and methods for, and more particularly to apparatuses, systems, and methods for a high-speed composite amplifier driving circuit to generate and output analog signals. The high-speed composite amplifier driving circuit can combine a voltage-controlled pulser and waveform generator with high-accuracy current-voltage (I-V) measurement functions. The voltage-controlled pulser and waveform generator, for example, can provide a ±5 volt, 10 milliamp waveform at up to 50 megahertz with 5 nanosecond rise / fall timing and 8 ns minimum pulse widths. In addition, the high-accuracy I-V measurements can measure a ±10 volts, 10 milliamp waveform at up to 30 MHz with 7-10 nanosecond rise / fall timing and 8 to 12 nanosecond minimum pulse widths.

Provided is a dual-drive based Doherty amplifier that includes a first power amplifier and a second power amplifier that is in parallel with the first power amplifier. The first power amplifier is configured to receive a first portion of a signal having a first phase, and the second power amplifier is configured to receive a second portion of the signal having a second phase that has a phase difference from the first phase. At least one of the first power amplifier or the second power amplifier includes a dual-drive power amplifier core.

A communication device includes a power amplifier that generates power signals according to one or more operating bands of communication data, with the amplitude being driven and generated in output stages of the power amplifier. The final stage can include an output passive network that suppresses suppress an amplitude modulation-to-phase modulation (AM-PM) distortion. During a back-off power mode a bias of a capacitive unit of the output power network component can be adjusted to minimize an overall capacitance variation. A output passive network can further generate a flat-phase response between dual resonances of operation.

Provided in the present application are a power amplification assembly, a power amplifier and a communication device, which relate to the technical field of communications, and are used for solving the problem of a relatively low degree of integration of a power amplifier not being conducive to realizing a compact design. In the power amplification assembly provided in the present application, both a carrier transistor and a peak transistor are located on a first surface of a substrate; a conductive layer is located on both the side of the carrier transistor that is away from the substrate and the side of the peak transistor that is away from the substrate; a first signal output terminal of the carrier transistor and a second signal output terminal of the peak transistor are connected to the conductive layer by means of a conductive structure; and the conductivity distance between the second signal output terminal and a combining point between the first signal output terminal and the second signal output terminal is less then or equal to λ / 16. In the power amplification assembly provided in the present application, a stacked structural design can be realized, and the conductive structure and the conductive layer can realize impedance matching and phase matching between the carrier transistor and the peak transistor, featuring relatively high degrees of integration and compactness.

This invention belongs to the field of wireless communication technology. It provides a differential amplifier system and a method for improving common-mode stability. The invention uses a large decoupling capacitor C1 at the transformer center tap to provide AC ground, and a common-mode resistor R1 to improve the circuit's common-mode stability. Since the common-mode resistor R1 is not in the differential signal loop path, the use of common-mode resistor technology does not affect differential-mode performance. Because the required common-mode resistor value is small, this design occupies a small layout area. This invention solves the problem of low common-mode stability in differential amplifiers.

The present disclosure relates to a capacitance multiplier for decoupling capacitors. An integrated circuit can include one or more circuits coupled to a capacitance multiplier circuit. The capacitance multiplier circuit can include a capacitor, fixed and tunable resistors, and a transconductance circuit. The tunable resistor can be adjusted to control the total capacitance of the capacitance multiplier circuit. The transconductance circuit can include a transistor having a drain terminal coupled to a first electrical component and a source terminal coupled to a second electrical component. The first electrical component can be a diode-connected transistor, a direct shorted wire, a resistor, an inductor, or a current source. The second electrical component can be a current source, a direct shorted wire, a resistor, an inductor, or another diode-connected device. Configured in this way, the capacitance multiplier circuit can provide a large adjustable capacitance without voltage drop and without consuming a large amount of power.

An RF amplifier includes a transistor die, an impedance matching circuit, and a baseband termination circuit. The impedance matching circuit includes a first inductive element connected between a transistor terminal and a first node, a second inductive element connected between the first node and an RF input / output, and a first capacitance connected between the first node and a ground reference node. The baseband termination circuit includes a multiple-cell resonator and an envelope capacitor coupled in series between the first node and the ground reference node. The multiple-cell resonator includes at least 4 resonator cells. Each resonator cell includes an RF isolation inductor and an RF isolation capacitor coupled in parallel between the first node and the envelope capacitor, which form a parallel resonant circuit in proximity to a center operating frequency of the RF amplifier. The baseband termination circuit also includes one or more envelope resistors.

The invention provides a linearization circuit and a power amplifier, the linearization circuit comprises an impedance adjusting circuit, a first input end of the impedance adjusting circuit is used for accessing a first control signal, and a second input end of the impedance adjusting circuit is used for accessing a first radio frequency signal. A third input end of the impedance adjusting circuit is used for accessing a second radio frequency signal; each of the first control signal, the first radio frequency signal and the second radio frequency signal comprises a direct current component; the value of voltage accessed to the second input end of the impedance adjusting circuit changes along with the change of the first radio frequency signal, and the value of voltage accessed to the third input end of the impedance adjusting circuit changes along with the change of the second radio frequency signal, so that the impedance of the impedance adjusting circuit is dynamically adjusted. The linearization circuit provided by the invention can compensate the nonlinear distortion of the power amplifier so as to improve the quality of a radio frequency signal.

An amplifier device, such as a Doherty amplifier device, may include an extra lead and decoupling capacitor coupled to radio frequency (RF) cold points of output impedance matching circuitry of multiple amplification paths, such as a carrier path and peaking path, of the amplifier device. The extra lead and the decoupling capacitor are configured to provide low frequency resonance decoupling for the multiple amplification paths. A drain bias voltage may be provided to the drain terminals of transistors of amplifiers of the amplifier device via the extra lead. An integrated passive device (IPD) including a wire fence and one or more conductive pads may be disposed between a carrier amplifier die and a peaking amplifier. The extra lead may be coupled to the RF cold points via the IPD. The wire fence may mitigate RF interference between the carrier amplifier die and the peaking amplifier die.

The application belongs to the technical field of radio frequency amplifiers, and specifically discloses a CMOS common-source common-gate radio frequency amplifier with temperature and process deviation compensation, which comprises a bias circuit and an amplification stage circuit; the bias circuit adopts a temperature and process deviation compensation bias circuit; when the ambient temperature changes, the bias circuit can collect the real-time temperature of an amplifying tube and generate a new bias voltage, so that the bias state of the amplification stage circuit is dynamically adjusted, and the fluctuation of the gain and power consumption of the amplifier with the temperature change is reduced; similarly, when the process parameter distribution deviation occurs in different regions of a wafer during the chip manufacturing process, the same chip bias circuit and the amplifying tube region of the amplification stage circuit are the same, the same process deviation is generated, the bias circuit can generate a new bias voltage according to the process deviation, the bias state of the amplification stage circuit is dynamically adjusted, and the fluctuation of the gain and power consumption of the amplifier with the process deviation is reduced. The application is suitable for a low-noise amplifier in a WiFi radio frequency front-end module.

Methods and devices to mitigate the detrimental effects of highly capacitive output routes of multiple gain low noise amplifiers on the overall performance of the circuit are disclosed. The disclosed methods and devices implement the same inductive element across the output load in both the low gain and high gain operational modes. Furthermore, such devices implement switches to control the selection of different signal paths for the high gain and low gain mode. The implemented switches are also used to selectively adjust the isolation of the output stage of the LNA.

The invention discloses an adjustable self-bias closed-loop ring amplifier which comprises a first-stage MOS tube, a second-stage MOS tube, a third-stage MOS tube and a bias resistor unit, each stage of MOS tube comprises two MOS tubes, grid electrodes of the two MOS tubes of the first-stage MOS tube are connected and then connected with an input node, an output of the first-stage MOS tube is connected with grid electrodes of the two MOS tubes of the second-stage MOS tube, and the bias resistor unit is connected with the first-stage MOS tube and the second-stage MOS tube. The bias resistor unit is connected between drain electrodes of two MOS tubes in the second-stage MOS tube, partial voltage of the bias resistor unit is used for generating a first bias voltage and a second bias voltage, the first bias voltage and the second bias voltage are respectively connected with grid electrodes of two MOS tubes of the third-stage MOS tube, and an output end of the third-stage MOS tube is used for outputting voltage to a rear-end circuit. The adjustable self-biased closed-loop ring amplifier can quickly amplify residual voltage, is suitable for high-speed occasions, can also realize higher gain, and can work in a sub-threshold value by biasing the MOS tube, so that the stability of the adjustable self-biased closed-loop ring amplifier is improved. The invention further discloses a switched capacitor circuit comprising the adjustable self-biased closed-loop ring amplifier.

A distributed power management apparatus is provided. The distributed power management apparatus includes an envelope tracking (ET) integrated circuit (ETIC) and a distributed ETIC separated from the ETIC. The ETIC is configured to generate a number of ET voltages for a number of power amplifier circuits and the distributed ETIC is configured to generate a distributed ET voltage(s) for a distributed power amplifier circuit(s). In a non-limiting example, the number of power amplifier circuits and the distributed power amplifier circuit(s) can be disposed on opposite sides (e.g., top and bottom) of a wireless device. As such, in embodiments disclosed herein, the ETIC is provided closer to the power amplifier circuits and the distributed ETIC is provided closer to the distributed power amplifier circuit(s). By providing the ETIC and the distributed ETIC closer to the respective power amplifier circuits, it is possible to reduce trace inductance and unwanted signal distortion.

The invention discloses a differential derivative structure circuit based on three-coupling transformation and an amplifier, and relates to the technical field of amplification circuit design. The differential derivative structure circuit comprises a three-coupling inductance network and N output parts. Through a three-coupling transformation mode, power supply of a main amplifier tube and an auxiliary amplifier tube in a differential derivative structure formed by connecting MOS tubes in parallel is integrated into an inductance matching network, so that homologous coupling of the main amplifier tube and the auxiliary amplifier tube on a radio frequency signal path is realized, physical isolation and independent bias control are also realized on a direct current path, and the power supply efficiency is improved. Therefore, a resistor does not need to be used, excessive use of a capacitor is avoided, loss caused by self impedance of the capacitor and ground parasitic capacitance loss are reduced, gain is greatly improved, extra area occupation caused by the capacitor and the resistor is effectively inhibited, and thermal noise introduced by the resistor is eliminated by utilizing the characteristic of low impedance of inductive coupling. Therefore, post-stage noise is effectively suppressed, and the noise coefficient is reduced.

The application discloses a high-gain low-noise amplifier with transient overshoot optimization, which comprises a first low-noise amplification unit, a second low-noise amplification unit and a control unit, or comprises the first low-noise amplification unit or the second low-noise amplification unit and the control unit; the control unit is used for controlling the first low-noise amplification unit and the second low-noise amplification unit to be turned on and turned off; the first low-noise amplification unit is connected with the second low-noise amplification unit through a matching unit; and the application solves the problem of transient overshoot caused by the low-noise amplifier when being turned on or turned off.

The invention discloses a multilayer ceramic-based amplifier high-isolation DC power supply circuit, which comprises a multilayer ceramic plate, a capacitive circuit and an inductive circuit, the capacitive circuit comprises a left capacitive circuit and a right capacitive circuit; the left capacitive circuit comprises a left capacitive circuit piece, a first left extension piece and a second left extension piece, and the right capacitive circuit comprises a right capacitive circuit piece, a first right extension piece and a second right extension piece; the inductive circuit comprises an upper inductive circuit, a middle inductive circuit and a lower inductive circuit which are connected; according to the invention, a unit circuit with a small specific size is realized through a multilayer ceramic design, a circuit pattern can be built in a proper area among multiple layers of substrates according to actual isolation use requirements in a specific product, and meanwhile, through the superposition effect of a plurality of structural units, the circuit pattern can be built in a proper area among the multiple layers of substrates in a complex inter-board product design. And the crosstalk influence between the power supply and the amplifier is obviously reduced under the condition of not additionally occupying a relatively large design space.