2368results about "Amplifier input/output impedence modification" patented technology

Aspects of this disclosure relate to a bulk acoustic wave device that includes a multi-layer raised frame structure. The multi-layer raised frame structure includes a first raised frame layer positioned between a first electrode and a second electrode of the bulk acoustic wave device. The first raised frame layer has a lower acoustic impedance than the first electrode. The first raised frame layer and the second raised frame layer overlap in an active region of the bulk acoustic wave device. Related filters, multiplexers, packaged modules, wireless communication devices, and methods are disclosed.

Aspects of this disclosure relate to acoustic wave filters with bulk acoustic wave resonators configured to excite an overtone mode as a main mode. A bulk acoustic wave resonator of the filter can include a plurality of stacked piezoelectric layers positioned between a pair of electrodes.

The invention provides a multi-band radio frequency power amplifier dynamic range adaptive test method and a system thereof. The method comprises the following steps: acquiring an output signal frequency spectrum of a tested radio frequency power amplifier, extracting characteristic frequency points including a center frequency and a bandwidth, matching the characteristic frequency points with a preset frequency band database, and automatically loading a test scheme of a corresponding frequency band. According to the method, the frequency bands are automatically matched through spectrum sensing, the test scheme is loaded, the multi-frequency-band characteristics can be rapidly adapted without manual parameter configuration, index missing test is avoided, and the switching efficiency is improved; dynamically optimizing test parameters by using a genetic algorithm, and accurately capturing a nonlinear distortion critical point while balancing coverage and efficiency; by combining multi-dimensional signal analysis and a deep learning model, the problem of missing detection of traditional single-domain analysis is solved, and the abnormal signal recognition capability is remarkably enhanced; through linear model correction, impedance dynamic matching and index threshold iteration, full automation and high precision of the test are realized, the environmental interference influence is effectively reduced, and a self-adaptive test system is constructed.

The invention relates to the technical field of wireless communication, and provides a radio frequency low-noise amplifier which comprises an input matching module, a power amplification module, an output matching module, an RC attenuation module and an RC feedback module, the first end of the first inductor serves as the input end of the output matching module, the first end of the first inductor is connected with the output end of the power amplification module, the control end of the switch and the first end of the first adjustable resistor, and the second end of the first inductor is connected with the first end of the second inductor and the first end of the third capacitor. The output end of the switch is connected with the first end of the first capacitor and the first end of the second capacitor. The second end of the second capacitor is connected with the second end of the first adjustable resistor and the second end of the second inductor and used for being connected with a power supply. The second end of the first capacitor is connected with the second end of the third capacitor and serves as the output end of the output matching circuit. The radio frequency low-noise amplifier is adjustable in gain, low in noise and good in linearity performance.

The invention relates to the technical field of wireless communication, and provides a radio frequency power amplifier and a radio frequency chip, the radio frequency power amplifier comprises an input matching circuit, a first-stage amplifier, a first inter-stage matching circuit, a second-stage amplifier, a second inter-stage matching circuit, a third-stage amplifier and an output matching circuit which are electrically connected in sequence; the radio frequency power amplifier further comprises a control module, a direct current power supply module, a first bias circuit, a second bias circuit and a third bias circuit. The first biasing circuit comprises a power detection network and a switch control circuit; the first input end of the power detection network serves as the first input end of the first bias circuit, the second input end of the power detection network serves as the second input end of the first bias circuit, and the power detection network is used for receiving a radio frequency signal, converting the radio frequency signal into a control voltage in a detection mode and outputting the control voltage to the input end of the switch control circuit. The control switch controls connection or disconnection of the circuit. According to the invention, the robustness of power can be improved.

The invention relates to the technical field of electronic circuits, in particular to a low-noise amplification circuit and a radio frequency system. The low-noise amplification circuit at least comprises an amplification input circuit and an amplification output circuit, wherein at least one group of tail inductor structure is arranged in the amplification input circuit and the amplification output circuit; the first resonance circuit is of a closed structure, the first resonance circuit is in coupling connection with the tail inductor structure, and the first resonance circuit is used for discharging current generated by the tail inductor structure; the first resonance circuit at least comprises a secondary coil which is in coupling connection with a primary coil in the tail inductor structure; and the first end of the first capacitor module is electrically connected with the secondary coil. The invention provides a low-noise amplification circuit with higher working stability.

The invention is suitable for the technical field of wireless communication, and particularly relates to a low-noise amplifier and a radio frequency chip. The low noise amplifier comprises an input matching circuit, a biasing circuit, an amplifying circuit, an output matching circuit, an attenuator and an anti-distortion gain suppression circuit. Compared with the prior art, the anti-distortion gain suppression circuit capable of preventing distortion caused by overlarge waveform amplitude is additionally arranged at the joint of the first MOS tube and the second MOS tube of the amplification circuit, and the problem of linearity deterioration caused by overlarge waveform amplitude of a chip amplification link can be effectively reduced through the anti-distortion gain suppression circuit; therefore, the low noise amplifier can output radio frequency signals with better linearity.

The invention provides a low-noise amplification circuit and a radio frequency power amplifier module, and the low-noise amplification circuit comprises an input matching circuit, a cascode amplification structure, an output matching circuit and a path switching assembly. The input matching circuit comprises a first inductor, a second inductor, a first capacitor and a third inductor; the output matching circuit comprises a fourth inductor, a second capacitor, a fifth inductor, a third capacitor and a fourth capacitor; and the access switching assembly is used for selecting channels of the low-noise amplification circuit, so that a radio frequency signal accessed by the first inductor is directly output or output after being amplified by the cascode amplification structure. According to the low-noise amplification circuit, on the premise that the noise coefficient is reduced and the gain is matched, the order of an input and output matching network does not need to be increased, and correspondingly, the cost and the area of the low-noise amplification circuit are not increased.

The embodiment of the invention provides a closed-loop control method for power driving and protection, and the method comprises the steps: constructing a voltage feedback type circuit through a high-speed operational amplifier, and forming a closed-loop gain structure through a feedback network of the voltage feedback type circuit; the load current of the output end of the voltage feedback type circuit is monitored in real time, and when the load current exceeds a first set threshold value, a protection mechanism is triggered to turn off the output stage; the power-on surge current is limited through the soft start control circuit; phase information of a load reflection coefficient is obtained, an inductance / capacitance combination of the variable dynamic impedance matching network is selected according to phase information table look-up, inductance / capacitance parameters are switched through a relay, and the transmission standing-wave ratio between the power amplifier and a load is optimized; monitoring the temperature of the radiating fin of the power tube, and dynamically adjusting the resistance value of the feedback network; and performing cooperative control of short-circuit protection, over-temperature protection and surge suppression according to the priority. According to the embodiment of the invention, the performance bottleneck in a load fluctuation scene is broken through.

The invention provides a broadband low-noise amplifier based on a three-coil coupling transformer. The broadband low-noise amplifier comprises an input matching network, a common-source differential output driving stage amplifier, an inter-stage matching network, a common-source differential output power stage amplifier and an output matching network which are connected in sequence, broadband matching is realized by using the input matching network and the inter-stage matching network, and the effective transconductance of the transistor is improved; through the cross-coupled capacitors, the LNA gain and stability on a broadband are improved, better isolation is realized, and input and output are decoupled; due to the design of the grounding capacitor, the linearity of the LNA is improved; through the combination of the three-coil coupling transformer and the differential topology, output signals are superposed in the same direction at the output end, and noise is cancelled in the reverse direction at the output end, so that the thermal noise is greatly inhibited, the isolation is improved through the output matching network, the insertion loss is reduced, and the output matching performance is optimized.

Aspects of this disclosure relate to acoustic wave filters with bulk acoustic wave resonators. An acoustic wave filter can include a first bulk acoustic wave resonator configured to excite an overtone mode as a main mode and a second bulk acoustic wave resonator having a fundamental mode as a main mode.

The utility model relates to a radio frequency power amplification circuit with a harmonic suppression function and a radio frequency chip. The radio frequency power amplification circuit comprises an input matching unit, a first-stage power amplification unit, a first-stage bias unit, a first-stage power supply unit, an inter-stage matching unit, a second-stage power amplification unit, a second-stage bias unit, a second-stage power supply unit and an output matching unit. According to the utility model, the LC type trap circuits are designed and used in the power supply unit and the inter-stage matching unit, so that secondary, tertiary and high-order harmonic suppression is realized in the radio frequency power amplification circuit; meanwhile, based on LC circuit structures in the power supply unit and the inter-stage matching unit, the inter-stage matching bandwidth is widened, and the linearity of the multi-stage power amplification unit is improved.

The application discloses an RF push-pull power amplifier chip, wherein the second end of the first capacitor is connected to the first pad of the chip, and the second end of the second capacitor is connected to the second pad of the chip, and the first pad is bonded to the second pad by a wire. The first capacitor, second capacitor and wire form an impedance matching circuit, which participates in impedance matching of the chip together with the first balun. In this way, the RF push-pull power amplifier chip can support a larger bandwidth, and the equivalent inductance can be changed by adjusting the length of the wire, so that the impedance matching circuit can be adjusted more flexibly in a limited chip area. Therefore, the bandwidth performance of the RF push-pull power amplifier chip would not be affected, and the occupied area of the chip can be reduced.

The invention discloses a noise elimination circuit structure, a low noise amplifier, a chip and electronic equipment. The noise elimination circuit structure comprises an input matching network; a common source stage amplification path connected with the first differential output end of the input matching network, comprising a first common source stage differential amplifier, and outputting an amplified first signal inverted from the radio frequency input signal to the ground; the common-gate amplification path is connected with the second differential output end of the input matching network, comprises a first common-gate differential amplifier and outputs an amplified second signal which is opposite to the radio frequency input signal to the ground; and the output end of the common-source amplification path and the output end of the common-gate amplification path are connected in parallel to form the output end of the noise elimination circuit structure. The common-source amplification path and the common-gate amplification path required by the noise elimination structure are realized by using one amplifier path, the utilization rate of the layout area is improved, the compactness of the layout is realized, and the amplifier can be widely applied to the field of communication or radar.

A method of adjusting an impedance of a power amplifier of a radio frequency system for matching with an antenna switch die is disclosed. In one aspect, the method includes connecting the power amplifier to the antenna switch die via an impedance adjustment circuit, the impedance adjustment circuit including an input node, an output node, a plurality of electrical components arranged between the input node and the output node, and at least one switch configured to selectively electrically connect at least one of the electrical components to the input node and the output node. The method further includes determining an Error Vector Magnitude of the radio frequency system for each of a plurality of states of the at least one switch, and controlling the at least one switch to enter the state of the plurality of states that minimizes the Error Vector Magnitude of the radio frequency system.

The invention relates to the technical field of wireless communication networks, and provides a low-channel electroencephalogram amplification circuit and brain-computer interface equipment oriented to an after-ear electroencephalogram signal, and the low-channel electroencephalogram amplification circuit comprises a dry electrode sensing module which is used for collecting an electroencephalogram signal; the front active amplification module comprises an operational amplifier circuit with high input impedance; the anti-aliasing filtering module is formed by cascading a multi-order passive filtering network and an active filtering circuit, is connected with the output end of the front active amplification module and is used for filtering high-frequency interference signals; the right leg driving feedback module comprises a programmable impedance adjusting circuit and a current limiting protection circuit, the right leg driving feedback module and the front active amplification module form a closed-loop feedback loop, and the output end of the right leg driving feedback module and the human body form a current loop through a protection resistor; the analog-to-digital conversion module adopts an integrated low-power-consumption analog front-end chip; a wireless transmission module; and the power supply management module provides independent power supply for the analog front-end chip, the operational amplifier circuit and the wireless transmission module.

The invention discloses a negative group delay system based on SSPP, and belongs to the technical field of microwave communication. A fundamental mode negative group velocity is innovatively generated based on an artificial surface plasmon SSPP, and an SSPP system with negative group delay is realized. The system comprises two parts, namely an amplifier circuit and an SSPP waveguide with a negative group delay unit. The SSPP waveguide with the negative group delay characteristic comprises two coplanar waveguide parts, two transition parts and an SSPP waveguide part, the SSPP waveguide part comprises a unit for generating negative group velocity and a plurality of basic units, and further comprises a microwave dielectric substrate. The amplifier is composed of an amplifier chip, a peripheral capacitor inductor of the amplifier chip and a direct-current power supply. An input signal passes through the system, and advanced transmission of the signal can be realized. The problems of narrow bandwidth, large loss and non-adjustable structure in the prior art are effectively solved, and the antenna has wide application prospects in the fields of 5G communication, radar signal processing, array antenna systems and the like.

The present disclosure discloses a Doherty power amplifier, including: a quadrature coupler including a first coupled inductor and a second coupled inductor, the quadrature coupler being configured to split an input signal into a first signal and a second signal; a first amplifier circuit, configured to amplify the first signal; a second amplifier circuit, configured to amplify the second signal; and a load modulation network, which is an output voltage-combined Doherty load modulation network using a T equivalent model. An overlapping part of the coupled inductors is used to provide distributed parasitic capacitance, thereby eliminating the need to set an additional capacitor in the quadrature coupler, and therefore reducing an area. Through the T equivalent model, a quarter-wavelength transmission line is equated to the load modulation network of the embodiments of the present disclosure, multiple inductors are combined into transformers with small areas.

Front end systems and related devices, integrated circuits, modules, and methods are disclosed. One such front end system includes a low noise amplifier in a receive path and a multi-mode power amplifier circuit in a transmit path. The low noise amplifier includes a first inductor, an amplification circuit, and a second inductor magnetically coupled to the first inductor to provide negative feedback to linearize the low noise amplifier. The multi-mode power amplifier circuit includes a stacked output stage including a transistor stack of two or more transistors. The multi-mode power amplifier circuit also includes a bias circuit configured to control a bias of at least one transistor of the transistor stack based on a mode of the multi-mode power amplifier circuit. Other embodiments of front end systems are disclosed, along with related devices, integrated circuits, modules, methods, and components thereof.

Aspects of this disclosure relate to acoustic wave filters with bulk acoustic wave resonators. An acoustic wave filter can include a first bulk acoustic wave resonator configured to excite an overtone mode as a main mode and a second bulk acoustic wave resonator having a fundamental mode as a main mode.

An improved architecture for a radio frequency (RF) power amplifier, impedance matching network, and selector switch. One aspect of embodiments of the invention is splitting the functionality of a final stage impedance matching network (IMN) into two parts, comprising a base set of off-chip IMN components and an on-chip IMN tuning component. The on-chip IMN tuning component may be a digitally tunable capacitor (DTC). In one embodiment, an integrated circuit having a power amplifier, an on-chip IMN tuner, and a selector switch is configured to be coupled to an off-chip set of IMN components. In another embodiment, an integrated circuit having an on-chip IMN tuner and a selector switch is configured to be coupled through an off-chip set of IMN components to a separate integrated circuit having an RF power amplifier.

The invention provides a fully differential operational amplifier circuit and an operational amplifier. The fully differential operational amplifier circuit comprises an input stage circuit, a gain stage circuit and a common-mode feedback circuit, the input stage circuit is used for processing a differential input voltage signal, converting the differential input voltage signal into a differential current signal and transmitting the differential current signal to the gain stage circuit; the gain stage circuit is used for performing gain processing on the differential current signal and outputting a target differential voltage signal; the common-mode feedback circuit is used for detecting the common-mode voltage of the target differential voltage signal, generating a common-mode feedback signal and transmitting the common-mode feedback signal to the gain-stage circuit to stabilize the common-mode voltage; wherein the gain stage circuit comprises a gain enhancement circuit, and the gain enhancement circuit is used for increasing the output impedance of the gain stage circuit. According to the chopping operational amplifier, the input stage circuit, the gain stage circuit, the common mode feedback circuit and the gain enhancement circuit are combined, so that the precision and the sensitivity of the chopping operational amplifier are improved.

Amplification circuitry is disclosed that couples neutralization transistors to amplification transistors to neutralize parasitic capacitance of the amplification transistors. Gates of a first amplification transistor and a first neutralization transistor are coupled together, and gates of a second amplification transistor and a second neutralization transistor are also coupled together. Drains of the first amplification transistor and the second neutralization transistor are coupled together, and drains of the second amplification transistor and the first neutralization transistor are also coupled together. Sources of neutralization transistors are coupled together at a node, such that a voltage swing of a first signal in the first neutralization transistor may be canceled by a voltage swing of a second signal in the second neutralization transistor. The node also couples to a resistor that prevents charge building in the neutralization transistors.

The invention discloses a C / X wave band ultra-wideband GaAs MMIC low-noise amplifier, and mainly relates to the technical field of radio frequency front ends. Comprising an input matching network used for receiving a radio frequency signal and performing impedance matching so as to effectively transmit the signal to a subsequent active amplification part; and the active amplification part adopts an improved cascode-cascode cascade amplification structure and is used for amplifying the radio frequency signal transmitted by the input matching network. The amplifier has the advantages that an improved cascode-cascode cascade amplification structure is adopted, the gain is improved through an improved Cascode structure, the noise coefficient of the circuit is reduced, and the performance indexes of ultra wide band, low noise and high gain are achieved. The design of the structure not only improves the overall performance of the amplifier, but also enables the amplifier to keep stable gain output in a broadband range, and effectively solves the problems of low gain and high noise of a traditional low-noise amplifier in broadband application.

Methods and devices to improve nonlinearity performance of low noise amplifiers (LNAs) are disclosed. The described methods and devices reduce the capacitive loading of the LNA amplifying devices on the bypass path of the LNAs when operating in the bypass mode. This is performed by decoupling the active devices from ground to put the amplifying devices in a floating state, thus minimizing the impact of the gate-source capacitances of the amplifying devices on the overall linear performance of the LNA operating in the bypass mode.

The embodiment of the invention provides a radio frequency power amplifier module, a manufacturing method, an antenna transceiver module and a base station, and relates to the technical field of communication equipment. The radio frequency power amplifier module comprises a first substrate; the power amplification component and the isolation component are arranged on the first substrate; the power amplification component is electrically connected with the isolation component through the first substrate; wherein the isolation part comprises a ferrite element and a first area of the first substrate, and the ferrite element is arranged in the first area of the first substrate. According to the embodiment of the invention, the cost of the radio frequency power amplifier module can be effectively reduced, the insertion loss between the power amplification component and the isolation component is reduced while the area of the radio frequency power amplifier module is reduced, and the emission efficiency of the emission path is improved.

The present invention relates to the technical field of radio frequency. Disclosed are a power amplifier circuit and a radio frequency power amplifier module. The power amplifier circuit comprises a signal input end, a first-stage power amplifier, a coupler, an inter-stage matching circuit, a final-stage power amplifier, an output matching circuit, and a signal output end. The final-stage power amplifier comprises a first field-effect transistor. The power amplifier circuit further comprises a power detection module, a capacitor assembly consisting of multiple capacitors connected in parallel, a first triode, a first resistor, a triode assembly consisting of one or more triodes connected in series, a second resistor, a first capacitor, a third resistor, a first inductor, a second capacitor, and a varicap diode. According to the power amplifier circuit of the present invention, the amplitude modulation and phase modulation performance of amplifiers can be optimized, the technical implementation is simple, and the cost is low.

The embodiment of the invention provides a power amplification system, a radio frequency emission system and a signal emission device. The power amplification system comprises a hybrid coupler, a first amplifier, a second amplifier, a first impedance conversion line and a second impedance conversion line. The output end of the first amplifier is coupled with the hybrid coupler through a first impedance conversion line. And the output end of the second amplifier is coupled with the hybrid coupler through a second impedance conversion line. Wherein the first amplifier and the second amplifier are used for outputting radio frequency signals. And the hybrid coupler is used for performing impedance conversion with the first impedance conversion line and / or the second impedance conversion line. And outputting the synthesized radio frequency signal from the fourth end of the hybrid coupler. The synthesized radio frequency signal is synthesized by a plurality of radio frequency signals. According to the embodiment of the invention, the hybrid coupler is combined with the wavelength line serving as the impedance conversion line to realize impedance conversion and load traction, so that the area overhead caused by the wavelength line is reduced on the basis of reducing the power consumption of the power amplification system.

A frontend circuit includes a wide-band filter, a transmit filter, and switches. The wide-band filter passes both the receive frequency band of a first communication frequency band and that of a second communication frequency band which is close to or overlaps that of the first communication frequency band. The transmit filter passes the transmit frequency band of the first or second communication frequency band. The switches are capable of simultaneously bringing, into conduction, at least two of multiple filters including the wide-band filter and the transmit filter. In carrier aggregation using the receive frequency bands of the first and second communication frequency bands, the switches simultaneously bring the wide-band filter and the transmit filter into conduction. Thus, in carrier aggregation using signals of multiple communication frequencies simultaneously in communication, attenuation of signals due to signal leakage in two receive frequency bands, which are close to each other, is suppressed.

The invention relates to the technical field of radio frequency integrated circuits, in particular to a harmonic suppression power amplifier combining a matching network and a feed network, which comprises a transistor, an input matching module, an output matching module, a stabilizing module and a bias module, the input matching module comprises a first parallel resonance unit, the first parallel resonance unit is used for second harmonic suppression, the output matching module comprises a series resonance unit and a second parallel resonance unit, the series resonance unit is used for resonating at a second harmonic frequency and performing low-impedance grounding on the second harmonic, and the second parallel resonance unit is used for resonating at a second harmonic frequency and performing low-impedance grounding on the second harmonic. The second parallel resonance unit is used for resonating at a third harmonic frequency and forms a high-impedance open circuit for the third harmonic, the output matching module is coupled to a drain electrode of the transistor, and the bias module comprises a grid bias sub-module and a drain bias sub-module. The grid bias sub-module is coupled to a connection node of the input matching module and the grid of the transistor, the drain bias sub-module is coupled to the output matching module, and the bias voltage of the transistor is jointly determined by the grid bias sub-module and the drain bias sub-module. The power amplifier has the effect of improving the efficiency level of the power amplifier while realizing harmonic suppression optimization.