414 results about "Surface acoustic wave" patented technology

The invention relates to a preparation method of a surface acoustic wave filter integrated with a CMOS (Complementary Metal Oxide Semiconductor) process, which comprises the following steps of: preparing a CMOS radio-frequency signal processing circuit by using a silicon or silicon carbide substrate, combining a dielectric buffer layer with a piezoelectric material, and then depositing a metal interdigital structure on the surface of the piezoelectric material to prepare the surface acoustic wave filter. A passivation layer is deposited on the surface of the filter to protect the filter structure, finally a metal interconnection line and the passivation layer are prepared above the filter, and in order to not affect the performance of the filter, an air cavity is prepared between the passivation layer and the metal interconnection layer of the filter, so that the passivation layer and the metal interconnection layer are effectively isolated. According to the preparation method, the surface acoustic wave filter and the CMOS radio frequency circuit can be integrated, the problem that radio frequency front-end and rear-end signal processing cannot be integrated at the same time at present is solved, and the preparation method plays an important role in promoting development of a radio frequency chip in the directions of high integration, low cost, miniaturization and the like; and the radio frequency chip has wide practical value and economic value in the radio frequency chip application field.

The invention discloses an ultralow-temperature cascade refrigeration device, belongs to the technical field of refrigeration devices, and solves the problems that when a low-temperature screw compressor continuously operates below-80 DEG C, organic acid generated by hydrolysis of trace moisture and ester lubricating oil and metal chips form colloidal deposition, the resistance of a slide valve is increased, displacement lag is caused, and the service life of the slide valve is prolonged. However, the sensor only feeds back an instruction signal and cannot be monitored by a control system, and finally bearing wear or energy efficiency reduction is caused. Comprising a screw compressor and a slide valve state monitoring circuit arranged in the screw compressor. The actual displacement of the slide valve is measured in real time through double-frequency laser interference, the thickness of jelly is analyzed in combination with acoustic surface wave frequency shift, the fault index is calculated after dynamic compensation, early warning is conducted when the limit is exceeded, a blind area of a traditional sensor is eliminated, diagnosis is conducted in advance, and compressor bearing abrasion is avoided.

The invention relates to a surface acoustic wave filter and a preparation method thereof. The preparation method comprises the following steps: providing a glass substrate; a piezoelectric material layer is provided, the piezoelectric material layer comprises a bonding surface, and a sacrificial layer is formed in the portion, close to the bonding surface, of the piezoelectric material layer; bonding the bonding surface with the glass substrate; removing the piezoelectric material layer on one side, far away from the glass substrate, of the sacrificial layer, and forming a piezoelectric layer on the glass substrate; an interdigital electrode structure is formed over the piezoelectric layer. The surface acoustic wave filter and the preparation method thereof have the advantages of low cost, batch preparation, device miniaturization and high integration, and are particularly suitable for meeting the requirements on high-frequency acoustic devices in scenes such as communication technology, Internet of Things, intelligent terminals and the like.

Described herein are techniques for enhancing isolation in on-chip piezoelectric-based isolators. Several techniques are described that improve isolation in piezoelectric isolators. According to an aspect of the present disclosure, a piezoelectric isolator may include structures arranged to decrease the occurrence of pockets of high electric field and / or to increase the breakdown electric field in the path from the transmitter to the receiver. Further aspects of the present disclosure relate to techniques for increasing the efficiency of piezoelectric isolators while also limiting the formation of spurious signals. The inventors have developed techniques for promoting propagation of surface acoustic waves toward the receiver while limiting propagation in the opposite direction.

The invention provides an intelligent temperature control method and system for relieving stress of a glass annealing kiln. The method comprises the following steps: transmitting acoustic surface waves through a distributed sonic sensor to collect stress propagation data in glass, decoupling coupling characteristics of sound velocity and temperature, extracting a relaxation time constant, and generating a stress relaxation rate; performing time difference cross-correlation analysis to construct a stress propagation three-dimensional gradient field, establishing an incidence relation between the relaxation rate and the gradient field, and constructing a mapping strategy of the temperature set value and the relaxation rate according to the incidence relation; generating a dynamic temperature adjusting parameter and converting the dynamic temperature adjusting parameter into a heater power control signal; and dynamically adjusting a stress data feature extraction rule to match a real-time stress state according to the relevance between the gradient field update frequency and the temperature adjustment rate. According to the application, dynamic mutual optimization of the annealing stress elimination efficiency and the kiln temperature setting precision is realized, the glass residual stress is reduced, and the hidden danger of plate explosion is eliminated.

The invention discloses a method for detecting and analyzing the content of liquid flavor substances in a beverage, and belongs to the technical field of beverage quality detection. The method comprises the following steps: obtaining a flavor substance dielectric response signal and a surface acoustic wave propagation signal of a beverage sample, and carrying out correlation mapping integration to form a structured original data set; preprocessing data by adopting ensemble empirical mode decomposition, integrating features through a Bayesian network multi-source data fusion algorithm, and constructing an optimized content calculation model based on a gradient boosting tree algorithm; performing time sequence consistency and dimension matching verification on the data set, and inputting the data set into a model to generate a prediction result; and extracting a related content value, carrying out deviation analysis on the related content value and a preset standard range, calculating a signal feature contribution weight, and outputting a detection report containing standard judgment and deviation traceability. According to the method, the physicochemical characteristics of the flavor substances can be comprehensively represented, accurate prediction and deviation traceability are realized, the comprehensiveness, reliability and efficiency of detection are improved, and powerful support is provided for beverage quality control.

The invention provides a pipettor automatic calibration positioning and accuracy evaluation method based on photoelectric sensing, and relates to the technical field of pipettor calibration, and the method comprises the following steps: arranging an annular photoelectric sensor array to collect interference fringe phase difference, liquid level reflection light signals and surface acoustic wave signals, and adopting a five-step phase shift method to obtain a three-dimensional displacement vector; dynamic calibration is achieved through liquid level morphological parameter analysis in combination with adaptive Kalman filtering, numerical simulation is conducted on the liquid drop forming process through time-frequency analysis and a fluid mechanics model, and finally the accuracy is evaluated through adaptive fuzzy reasoning and Bayesian estimation. According to the invention, high-accuracy automatic calibration and evaluation of the pipettor are realized.

The present invention relates to the fields of ferroelectric single crystal technology and acousto-optical device technology, particularly to a silicon-based lead magnesium niobate (PbMn) single crystal piezoelectric wafer structure, preparation method, and application. The structure comprises a silicon substrate on which a silicon dioxide layer and a single crystal piezoelectric thin film layer are sequentially disposed; the single crystal piezoelectric thin film layer is a PbMn-PT single crystal, including a binary PMN-PT single crystal thin film or a ternary PIN-PMN-PT single crystal thin film. This piezoelectric wafer structure on a silicon substrate can be used to fabricate various high-performance piezoelectric MEMS sensors, actuators, and electro-optical modulator devices. The resulting surface acoustic wave (SAW) filters and thin film bulk acoustic wave (BAW) filters exhibit a relative bandwidth increase of over 50%, and the resulting electro-optical modulators exhibit lower half-wave voltage and higher electro-optical modulation efficiency. The device volume can be reduced by 10 times, better meeting the future 6G communication requirements for higher efficiency, higher integration, and miniaturization of MEMS devices. This provides a novel multilayer piezoelectric wafer structure for the miniaturization and integration of piezoelectric MEMS and optoelectronic devices.

The invention relates to the fields of information electronic material technology, information communication, wireless radio frequency communication and the like, in particular to a surface acoustic wave device and a preparation method thereof.The preparation method comprises the steps that after a metal film is deposited, patterned stripping is conducted on an interdigital electrode layer, and when patterned stripping is conducted on the interdigital electrode layer, a non-closed release window is formed; partially overlapping the thickened electrode layer from the direction of the non-closed release window to form a closed release window; etching the piezoelectric film exposed in the closed release window to form a release hole; and the sinking material is further released through the release holes so as to form a suspended piezoelectric film. According to the invention, by optimizing the patterning design and the processing flow of the resonator membrane structure, the release window in the bus bar region is efficiently stripped, the stripping processing difficulty of the bus bar electrode is reduced, and the stripping success rate of the bus bar electrode is improved.

Described herein are techniques for enhancing isolation in on-chip piezoelectric-based isolators. Several techniques are described that improve isolation in piezoelectric isolators. According to an aspect of the present disclosure, a piezoelectric isolator may include structures arranged to decrease the occurrence of pockets of high electric field and / or to increase the breakdown electric field in the path from the transmitter to the receiver. Further aspects of the present disclosure relate to techniques for increasing the efficiency of piezoelectric isolators while also limiting the formation of spurious signals. The inventors have developed techniques for promoting propagation of surface acoustic waves toward the receiver while limiting propagation in the opposite direction.

The invention relates to a hybrid structure for a surface acoustic wave device and an associated manufacturing method, said hybrid structure (10) comprising: a useful layer (1) of piezoelectric material joined to a support substrate (2) having a lower coefficient of thermal expansion than the useful layer (1); and an intermediate layer (3) arranged between the useful layer (1) and the support substrate (2). The intermediate layer is a sintered composite layer (3) formed from a powder of at least a first material and a second material, the second material being different from the first material.

Described herein are techniques for enhancing isolation in on-chip piezoelectric-based isolators. Several techniques are described that improve isolation in piezoelectric isolators. According to an aspect of the present disclosure, a piezoelectric isolator may include structures arranged to decrease the occurrence of pockets of high electric field and / or to increase the breakdown electric field in the path from the transmitter to the receiver. Further aspects of the present disclosure relate to techniques for increasing the efficiency of piezoelectric isolators while also limiting the formation of spurious signals. The inventors have developed techniques for promoting propagation of surface acoustic waves toward the receiver while limiting propagation in the opposite direction.

The application discloses a surface acoustic wave filter packaging structure and a packaging method thereof. The packaging structure comprises a substrate, solder resist layers arranged on the front surface of the substrate, filter chips and non-filter chips which are inverted on the front surface of the substrate and are arranged between the solder resist layers, and an injection molding layer covering the filter chips, the solder resist layers and the non-filter chips. The filter chips are uniformly provided with first protrusions on the side facing the substrate. The lower surface of the filter chip is overlapped with the upper surface of the adjacent solder resist layer, and a sealed cavity is formed between the filter chip, the solder resist layer and the substrate. The non-filter chips are uniformly provided with second protrusions on the side facing the substrate. A gap is left between the periphery of the non-filter chip and the adjacent solder resist layer, and the injection molding layer is filled below the non-filter chip. The application ensures the existence of the cavity at the bottom of the filter chip and protects the protrusions of the non-filter chip, thereby further improving the reliability of the product.

An apparatus is disclosed for implementing a surface-acoustic-wave (SAW) filter with dielectric material disposed in a piezoelectric layer. In an example aspect, the apparatus includes a surface-acoustic-wave filter with a piezoelectric layer, an electrode structure, and dielectric material. The piezoelectric layer has at least one channel. The dielectric material is disposed in the at least one channel of the piezoelectric layer and is at least partially covered by the electrode structure.

Described herein are techniques for enhancing isolation in on-chip piezoelectric-based isolators. Several techniques are described that improve isolation in piezoelectric isolators. According to an aspect of the present disclosure, a piezoelectric isolator may include structures arranged to decrease the occurrence of pockets of high electric field and / or to increase the breakdown electric field in the path from the transmitter to the receiver. Further aspects of the present disclosure relate to techniques for increasing the efficiency of piezoelectric isolators while also limiting the formation of spurious signals. The inventors have developed techniques for promoting propagation of surface acoustic waves toward the receiver while limiting propagation in the opposite direction.

The invention provides a vector magnetic field detection method based on a surface acoustic wave magnetic field directivity model, and the method employs an external magnetic field to act on a magnetic sensitive film on a sound propagation path to generate a dynamic magnetoelastic coupling effect, modulates the propagation characteristics of surface acoustic waves, and carries out the decoupling of a sound signal, and obtains the magnetic field information. The response value of the sensor is influenced by the included angle between the direction of the external magnetic field and the anisotropic axis, so that the angle orientation of the sensor in the space and the size and direction of the magnetic field can be quantitatively calibrated by projecting the magnetic field to be measured in the space into a coordinate system of the sensor, and a surface acoustic wave magnetic field directivity model is constructed. The surface acoustic wave magnetic field sensing technology has the advantages of high sensitivity, quick response and the like, and the vector magnetic field detection method can realize the direction positioning function of a full-plane magnetic field and has important practical value in the application field of space vector magnetic field detection.

The invention belongs to the crossing field of a surface acoustic wave device, a microfluidic technology and a surface enhanced Raman spectrum, and relates to a high-flux SERS substrate preparation device based on acoustic flow control. The device adopted by the method comprises a heating module and an enrichment module. And the heating module controls the temperature change, so that chip breakage caused by overheating is avoided. In the enrichment module, when an alternating electric signal is applied, an interdigital electrode excites the surface of the chip to generate surface acoustic waves, and then vibration of solid particles is triggered, so that target particles move along the surface of the substrate and are enriched. Meanwhile, the device adopts a bionic shark type hydrophobic film, so that the contact angle of liquid drops reaches 140 degrees, internal particles are convenient to gather, and the enrichment speed and the drying efficiency of the particles are remarkably improved. The method is easy and convenient to operate, enrichment and drying treatment is provided for subsequent target particles, and the detection sensitivity of the target particles in Raman spectrum analysis is remarkably improved; and a solution in a liquid sample can be quickly evaporated into solid residues.

The invention provides a surface acoustic wave filter and a frequency adjustment method thereof. The frequency adjustment method comprises the following steps: according to a light transmittance difference value between a first light transmittance and a second light transmittance, judging whether to carry out light transmittance adjustment on a resonator area; and performing frequency modulation operation on a frequency modulation layer covering the substrate according to the target frequency value and an actual frequency value acquired in the corresponding filter area of the substrate. The technical problem solved by the invention is that the light transmittance difference exists between the resonator region where the resonator is located and the surrounding region adjacent to the resonator region, that is, the exposure energy distribution is not uniform during photoetching. A common frequency modulation point is selected in an area above a resonator, namely falls into a surrounding area, so that a frequency value detected by the frequency modulation point in the surrounding area cannot accurately represent a frequency value of the whole surrounding area, and if the frequency modulation layer is thinned only according to the frequency value obtained by the frequency modulation point, the frequency modulation layer can be thinned. And therefore, the frequency modulation accuracy is reduced.

This invention provides a glass-based heterogeneous integrated structure with back vias and its fabrication method. Back vias are designed on a heterogeneous integrated wafer. The heterogeneous integrated wafer includes a glass substrate and a piezoelectric crystal layer, or at least one heterogeneous thin film layer is bonded between the glass substrate and the piezoelectric crystal layer. The back vias are blind vias and / or through-holes, with the blind vias etched to reach the piezoelectric crystal layer or any heterogeneous thin film layer. Filler metal is sputtered into the back vias. Before etching the front piezoelectric crystal layer, a surface acoustic wave (SAW) filter pattern can be fabricated on the complete surface of the glass-based heterogeneous integrated wafer with back vias. After etching the piezoelectric crystal layer, the bottom of the filler metal is exposed on the surface of the glass-based heterogeneous integrated wafer. The SAW filter and the filler metal are then interconnected through photolithography, evaporation or sputtering, electroplating, etc. The blind vias can be arranged into a folded inductor, connected to the front device layer through the through-holes. This invention features better device heat dissipation, improved package design and mass production capabilities, higher integration density, and higher device Q-value.

The utility model discloses a surface acoustic wave filter module packaging structure, which relates to the technical field of semiconductors and comprises a ceramic shell. According to the surface acoustic wave filter module packaging structure, a metal sealing cover is adopted for a surface acoustic wave filter, a tube shell is attached to the surface of an opening of a ceramic shell, packaging is conducted in a parallel sealing and welding mode, and parallel sealing and welding are divided into the three steps of vacuum baking, pre-welding and sealing and welding; in the vacuum baking process, a to-be-sealed device is heated and baked in a vacuum baking oven to remove water vapor and air, a user can take out a hotter packaging module from the vacuum baking oven through the cooperation of a related lifting appliance and a lifting hole due to the design of lug plates on the periphery of an opening of the ceramic shell, and in the subsequent pre-welding process, the packaging module can be taken out from the vacuum baking oven. And the metal sealing cover is embedded and matched with the inner wall of the opening of the ceramic shell through the bottom limiting strip, so that the accuracy of the mounting position of the metal sealing cover is guaranteed, the subsequent seal welding defect caused by the position deviation of the metal sealing cover is prevented, and the practicability is higher than that of the prior art.

The invention provides a surface acoustic wave filter and a manufacturing method thereof, and the surface acoustic wave filter comprises a substrate which is provided with a plurality of first grooves, and each first groove is internally provided with an interconnection layer; the plurality of resonators are arranged on the substrate; the plurality of resonators comprise spaced resonators and adjacent resonators, each resonator comprises a plurality of interdigital electrodes and bus bars connected with the interdigital electrodes, and the bus bars of the spaced resonators are electrically connected with the interconnection layer in the first groove so that the spaced resonators are electrically connected. By arranging the interconnection layer in the substrate, a traditional mode of forming a span bridge through dielectric layers such as Poly / Oxide and performing connection by means of PAD metal is replaced, the interlayer structure of the device is simplified, the production complexity is reduced, and the production period is effectively shortened.

The invention discloses a surface acoustic wave device and a radio frequency front end module, the surface acoustic wave device comprises a piezoelectric layer, a sound velocity layer and an interdigital electrode, and the interdigital electrode comprises a plurality of electrode fingers. The piezoelectric layer is provided with a first surface and a second surface which are oppositely arranged, the interdigital electrode is arranged on the first surface of the piezoelectric layer, and the sound velocity layer is arranged on the second surface of the piezoelectric layer; sound waves generated when the surface acoustic wave device works comprise surface acoustic waves and body waves; the surface acoustic wave device has a first characteristic depth, and the thickness of the piezoelectric layer is smaller than the first characteristic depth; wherein the first characteristic depth is related to the midline distance between two adjacent electrode fingers of the interdigital electrode, the bulk wave sound velocity of the piezoelectric crystal in the x direction and the working frequency. The sound velocity layer is directly arranged below the piezoelectric layer, the thickness of the piezoelectric layer is limited to be smaller than the first characteristic depth, and the thickness of the piezoelectric layer is reasonably reduced, so that the sound velocity of the surface wave is obviously improved or reduced, and meanwhile, the influence on the effects of other functional layers is avoided.

The invention discloses a surface acoustic wave filter and a forming method of the surface acoustic wave filter, and the surface acoustic wave filter comprises a substrate which comprises a base and a piezoelectric layer located on the base, the substrate comprises an interdigital region, a connection region and a spacer region located between the connection region and the interdigital region, and the interdigital region, the connection region and the spacer region are arranged along a first direction; the electrode layer is located on the partial surface of the side, away from the substrate, of the piezoelectric layer, the electrode layer comprises a plurality of interdigital electrodes located on the surface of the interdigital area, and the interdigital electrodes are arranged in parallel in the second direction; each interdigital electrode comprises an interdigital part and buffer parts located at the two ends of the interdigital part, each buffer part comprises a first part and a second part located between the first part and the interdigital part, the size of the first part in the second direction is larger than that of the interdigital part in the second direction, and the size of the second part in the second direction is gradually reduced from the first part to the interdigital part. Through the arrangement of the mass block in the technical scheme, the capability of suppressing a transverse mode and clutters can be improved.

The invention discloses a surface acoustic wave-based road icing sensor, which comprises a surface acoustic wave icing sensing chip and a signal processing system, and is characterized in that the surface acoustic wave icing sensing chip comprises a piezoelectric crystal, and an input transducer, an output transducer and a waveguide layer which are deposited on the piezoelectric crystal; the signal processing system comprises a signal source, a phase-locked loop and a splitter which are connected in sequence, and further comprises an amplitude discriminator and an A / D converter, and the splitter outputs two paths of signals which are directly connected to the amplitude discriminator respectively and are connected to the amplitude discriminator after passing through the surface acoustic wave icing sensing chip; the amplitude discriminator outputs a comparison result of the two paths of signals to the A / D converter so as to obtain road icing information; real-time monitoring of icing and the thickness of an ice layer is realized by utilizing the acoustic mode change of the surface acoustic waves caused by icing and the mass load effect, so that the road icing sensor disclosed by the invention has the technical effects of low power consumption, fast response and strong anti-interference capability.

This invention provides a surface acoustic wave (SAW) filter, comprising a piezoelectric layer and interdigitated electrodes. The interdigitated electrodes are disposed on the piezoelectric layer and include at least a first metal layer and a second metal layer stacked together. The first metal layer is made of platinum or an alloy with platinum as the main component, and the second metal layer is made of aluminum or an alloy with aluminum as the main component. By setting the material of the second metal layer to aluminum or an alloy with aluminum as the main component, the uniformity of metal coverage of the electrode structure can be effectively improved, avoiding excessive local resistance or structural defects caused by poor coverage. Setting the material of the first metal layer to platinum or an alloy with platinum as the main component provides reliable support for the second metal layer, reducing the risk of deformation or corrosion of the aluminum layer in subsequent processes. By using a stacked structure of two complementary materials for the interdigitated electrodes, both structural miniaturization and improved overall electrical performance and structural reliability of the interdigitated electrodes are achieved.

The invention relates to the technical field of acoustic wave device application and biological tissue engineering, in particular to a method for constructing a multi-component heterogeneous fiber structure under the assistance of acoustic tweezers. According to the method, an acoustic tweezers technology and a microfluidic spinning technology are combined, an electric signal is converted into an acoustic surface wave through the piezoelectric effect of a piezoelectric material, and a beam-shaped acoustic standing wave field is formed in a microchannel of a specific structure; different target cells form a stable fiber configuration under the interaction of microchannel limitation and acoustic radiation force, and spatial precise classification and arrangement of multiple types of cells are realized. The low-temperature-sensitive hydrogel is introduced in the cell injection process, and the fiber scaffold is formed after ultraviolet curing, so that the fiber structure of the cells is still maintained after the sound field is removed. The cells treated by the surface acoustic wave can form a complex three-dimensional bionic tissue structure more easily, and the cell viability is remarkably improved. Various fiber structures can be formed by regulating and controlling sound field parameters, and great potential is shown in the field of in-vitro barrier model construction.

The application discloses a three-dimensional ferroelectric material based on two-dimensional ice stacking and preparation and application thereof, and belongs to the technical field of ferroelectric materials and multifunctional devices. The material is a three-dimensional periodic crystal structure of monoclinic P21 space group, water molecules in the material form a completely saturated network through hydrogen bonds, and there is no suspended hydrogen; interlayers are coupled through van der Waals force to form a multi-level cooperative ferroelectric sequence of "in-plane hydrogen bond ferroelectric + interlayer van der Waals ferroelectric". The material has the characteristics of a wide-bandgap semiconductor (band gap 5-6 eV), extreme anisotropic mechanical properties (Z-axis Young's modulus 48.6 GPa, Eyx=0.973), moderate bulk modulus (12.23 GPa), good acoustic performance (sound velocity 2638 m / s) and extremely high pressure stability (0-3000 GPa structure is complete, 1190 GPa metalization transition). The material can be widely applied in the fields of X-ray optical devices, ferroelectric memories, deep ultraviolet photoelectric detectors, extreme high-pressure sensors, directional stress sensors, mechanical logic devices, surface acoustic wave filters, multifunctional integrated microsystems and multi-parameter composite sensing networks, and opens up a new direction for pure water-based functional materials.

The invention relates to the technical field of wireless communication, and provides a silicon-based constant-temperature surface acoustic wave filter and a preparation method thereof, and the preparation method comprises the following steps: carrying out monocrystalline silicon ion implantation on a silicon substrate to respectively form an n-type thermocouple pair and a p-type thermocouple pair; manufacturing a dielectric layer; a thermocouple pair interconnection layer is manufactured, so that the n-type thermocouple pair and the p-type thermocouple pair are connected to form a path; manufacturing a passivation adhesion layer on the surface, far away from the silicon substrate, of the dielectric layer; manufacturing an acoustic layer on the surface, far away from the silicon substrate, of the passivation adhesion layer; windowing the acoustic layer to form a first groove and a second groove, and exposing the n-type thermocouple pair and the p-type thermocouple pair respectively; a first electrical interconnection layer and a second electrical interconnection layer are manufactured in the first groove and the second groove respectively, an interdigital structure is manufactured on the surface, away from the silicon substrate, of the acoustic layer, and the silicon-based constant-temperature surface acoustic wave filter is obtained. According to the silicon-based constant-temperature surface acoustic wave filter, the temperature stability and the power tolerance performance can be improved.

The invention relates to a DMS type filter and a filtering device, the DMS type filter comprises reflecting gratings and a plurality of IDTs arranged between the reflecting gratings, and each IDT is arranged along the propagation direction of surface acoustic waves; each IDT comprises a plurality of spacing intervals, and each spacing interval is provided with interdigitals which are arranged along the propagation direction of the surface acoustic wave and are sequentially connected end to end; wherein each IDT comprises a main spacing area and a plurality of spacing adjusting areas, the spacing of the interdigitals in the main spacing area is consistent, the spacing of the adjacent interdigitals in each spacing adjusting area monotonically changes in the form of a quadratic power function along the direction far away from the main spacing area, and the variation amplitudes of the spacing of the adjacent interdigitals in different spacing adjusting areas are different. By adjusting the distance between the interdigitals one by one, the design freedom degree is remarkably improved, and therefore the purposes of reducing insertion loss, improving the standing-wave ratio, expanding the bandwidth and the like are achieved so as to adapt to different use scenes, and the application range is widened.

To provide a superconducting device implemented with a surface acoustic wave resonator and a superconducting microwave resonator that are coupled to a Josephson ring modulator, and methods of applications thereof.SOLUTION: A method comprises: receiving, by a microwave Josephson mixer and from a superconducting surface acoustic wave resonator of a superconducting device, a surface acoustic wave signal that comprises one or more phonons that resonate at a first frequency; receiving, by the microwave Josephson mixer and from a superconducting microwave resonator of the superconducting device, a microwave signal that comprises one or more photons that can resonate at a second frequency; and mixing, by the microwave Josephson mixer, the surface acoustic wave signal and the microwave signal on the basis of a microwave control signal received from a microwave source operatively coupled to the microwave Josephson mixer.SELECTED DRAWING: Figure 8