810 results about "Surface acoustic wave" patented technology

The invention discloses a peanut oil impurity detection method based on image recognition analysis, and relates to the technical field of computer vision, and the peanut oil impurity detection method comprises the following steps: carrying out impurity targeted marking on an oil sample; adopting dual-wavelength laser to excite the oil sample subjected to impurity target marking, synchronously acquiring a fluorescence image, and marking the coordinates of a suspicious composite impurity region by utilizing an FRET fluorescence intensity ratio; metal impurities and fiber impurities are distinguished according to the plasma formant position, and nanoscale impurity morphology data are formed; detecting unmarked transparent nanoparticles, triggering surface acoustic wave assisted detection, and outputting impurity motion feature codes; inputting the FRET fluorescence intensity ratio, the nanoscale impurity morphology data and the impurity motion trail features into a graph neural network classifier based on an attention mechanism, and performing joint interpretation on impurity types; and sorting and filling the oil sample according to an impurity classification result. The comprehensive performance of impurity detection is remarkably improved through a multi-mode sensing cooperation mechanism.

The invention provides a simulation design method applied to a simulation surface acoustic wave filter, and the method comprises the steps: measuring an actual surface acoustic wave filter model, obtaining a Y parameter of the filter, and carrying out the de-embedding processing of an admittance characteristic curve; according to the admittance characteristic curve, COM model parameters are extracted, and static capacitance is extracted; coupling mode model data simulation is carried out according to the extracted COM model parameters, and comparison with actually measured data is carried out; carrying out geometric modeling on the SAW filter to obtain a multi-physical field model and a grid thereof; adding corresponding boundary conditions and excitation conditions to the geometric model, and generating a grid file; importing the grid file into a spectral element algorithm, and saving calculation time by adopting distributed operation; and comparing the generated simulation curve of the COM model with a simulation curve obtained by a spectral element algorithm and actually measured data. And the problem of overlong simulation time of an existing acoustic wave filter is greatly solved while the simulation precision is not influenced.

The present invention is applicable to the technical field of numerical optimization, and particularly relates to a surface acoustic wave filter parameter optimization method and system, and a related device. The method comprises: S1, constructing an optimization model on the basis of a parameter needing to be optimized of a surface acoustic wave filter, and performing optimization computation on the parameter on the basis of the optimization model to obtain an optimized parameter; S2, constructing an adaptive particle swarm optimization algorithm capable of parallel computation of particle fitness, wherein the particle fitness comprises velocity and position; and S3, performing iterative computation by taking a particle swarm comprising the optimized parameter as input of the adaptive particle swarm optimization algorithm, to obtain a parameter optimization result corresponding to the parameter. The present invention solves the problems of difficulty in optimization and low optimization efficiency in a parameter optimization process by means of parameter coupling and swarm parallelism methods, improves the computation efficiency in filter parameter optimization, and further optimizes the simulation process.

The invention discloses a multi-parameter optimization method and system for a curved surface acoustic wave device. The method comprises the following steps: constructing theoretical models of the surface acoustic wave device under different strain conditions; solving the coupling wave equation to obtain the propagation velocity of the surface acoustic wave in the piezoelectric material under different strain conditions; acquiring at least one structural parameter of the curved surface acoustic wave device associated with the propagation speed; and performing global optimization on the at least one structure parameter according to a preset global topological optimization network to obtain a target structure parameter corresponding to the at least one structure parameter. A global topological optimization network is adopted, gradient back propagation is utilized, structural parameters of a device are intelligently designed, a quality factor value of the device is generated through finite element simulation calculation, and finally the quality factor distribution condition of the generated device is output. The problem that accurate real-time measurement of multiple parameters of the bent surface of the bearing cannot be achieved in the prior art can be solved.

The invention provides a switch cabinet contact temperature rise wireless sensing method and system based on surface acoustic wave resonance, and relates to the technical field of power system switch cabinet detection, and the method comprises the steps: calculating the real-time offset of a fundamental frequency and a third harmonic relative to a reference frequency, and obtaining the fundamental frequency offset and the third harmonic offset; in combination with the fundamental frequency offset and the equivalent acoustic impedance variable quantity of the oxide film, surface acoustic wave propagation path deformation caused by thermal expansion of the contact material is compensated by using a thermal-acoustic coupling partial differential equation, and the fundamental frequency net offset after temperature decoupling is obtained; sparse reconstruction is carried out on the temperature field of the contact area of the contact by adopting a compressed sensing algorithm, and three-dimensional temperature gradient distribution of the contact area of the contact is output; and inputting the three-dimensional temperature gradient distribution and historical time sequence data thereof into an intrinsic mode decomposition model for processing, and generating a dynamic self-adaptive early warning threshold value. The system has the advantages that passive, wireless, high-precision and full-space temperature rise monitoring is achieved, and intelligent operation and maintenance decision making of the switch cabinet is directly driven.

The invention relates to a preparation method of a surface acoustic wave filter integrated with a CMOS (Complementary Metal Oxide Semiconductor) process, which comprises the following steps of: preparing a CMOS radio-frequency signal processing circuit by using a silicon or silicon carbide substrate, combining a dielectric buffer layer with a piezoelectric material, and then depositing a metal interdigital structure on the surface of the piezoelectric material to prepare the surface acoustic wave filter. A passivation layer is deposited on the surface of the filter to protect the filter structure, finally a metal interconnection line and the passivation layer are prepared above the filter, and in order to not affect the performance of the filter, an air cavity is prepared between the passivation layer and the metal interconnection layer of the filter, so that the passivation layer and the metal interconnection layer are effectively isolated. According to the preparation method, the surface acoustic wave filter and the CMOS radio frequency circuit can be integrated, the problem that radio frequency front-end and rear-end signal processing cannot be integrated at the same time at present is solved, and the preparation method plays an important role in promoting development of a radio frequency chip in the directions of high integration, low cost, miniaturization and the like; and the radio frequency chip has wide practical value and economic value in the radio frequency chip application field.

The invention relates to the technical field of wireless communication, and provides a preparation method of a surface acoustic wave filter and the surface acoustic wave filter.The preparation method comprises the steps that S1, a substrate of the surface acoustic wave filter is obtained; s2, growing a plurality of metal electrodes and a protective layer on the front surface of the substrate, wherein the protective layer completely covers the plurality of metal electrodes; s3, presetting a soaking column area on the substrate, and spin-coating a layer of photoresist on the back surface of the substrate; s4, removing the photoresist in the soaking column region through exposure and development; s5, etching the soaking column region through dry etching to form a groove, and removing the residual photoresist on the substrate; s6, depositing an electroplating seed layer on the back surface of the substrate, and continuing to complete the copper electroplating process, so that the groove is filled with copper; and S7, grinding the back surface of the substrate until the back surface of the substrate is exposed, and reserving the soaking column formed in the groove to obtain the surface acoustic wave filter. The surface acoustic wave filter provided by the invention can effectively improve the thermal damage resistance of the device under the working condition of high input power.

A method for fabricating a surface acoustic wave (SAW) device includes the steps of forming a buffer layer on a substrate, forming a high velocity layer on the buffer layer, forming a medium velocity layer on the high velocity layer, forming a low velocity layer on the medium velocity layer, forming a piezoelectric layer on the low velocity layer, and forming an electrode on the piezoelectric layer. Preferably, the buffer layer includes silicon oxide, the high velocity layer includes graphene, the medium velocity layer includes silicon oxynitride, and the low velocity layer includes titanium oxide.

The invention discloses a surface acoustic wave band-pass filter, a design method thereof and electronic equipment, and the method comprises the steps: determining a first structure parameter of a resonator, and determining a second structure parameter which comprises the piezoelectric material and thickness of a piezoelectric film; extracting a first relation and a second relation related to the in-plane transmission directions of the resonators; building a target filter based on the first relation and the second relation; the target filter comprises a basic resonator group and a compensation resonator group, the frequency temperature coefficient of the basic resonator group at the center frequency of the filter is zero, and the frequency temperature coefficient of the compensation resonator group at the transmission zero point is zero; and if the frequency temperature coefficient of the detected target filter is not zero, returning to the step of determining the second structure parameter until the frequency temperature coefficient of the detected target filter is zero. Through interaction of the resonators, it is guaranteed that the passband range of the filter does not change along with temperature change, and the band-pass filter with the frequency temperature coefficient being zero is achieved.

A nonreciprocal microwave transmission device includes a substrate, a transducer on a surface of the substrate and configured to reciprocally convert between electrical signals to acoustic waves, a first piezoelectric material configured to generates and transports acoustic waves from a signal applied to the transducer, and a thin film magnetic material configured to couple to acoustic waves through magnetoelastic coupling so as to have non-reciprocal magnetoelastic coupled acoustic wave transport. Transmission of acoustic waves through the thin film magnetic material is in a direction toward the transducer has a first magnitude and transmission of acoustic waves through the thin film magnetic material in a direction away from the transducer has a second magnitude, the first and second magnitude being significantly different.

This application relates to the technical field of gas detection, and particularly to a method for detecting the concentration of specific gases in explosion - hazardous areas. This method uses solid - phase microextraction sampling on - site. The collected samples are detected offline using a surface acoustic wave gas chromatograph, and the gas concentration of the target component in the explosion - hazardous area is calculated and analyzed based on the detection results, ultimately achieving rapid detection of the concentration of specific gases in explosion - hazardous areas. The method for analyzing the concentration of specific gases in explosion - hazardous areas by coupling SPME with GC - SAW proposed in this application does not require pretreatment of the samples collected by SPME and can be directly injected for detection. The sampling and detection methods are safe, and the entire detection time cycle is greatly shortened.

The invention discloses an ultralow-temperature cascade refrigeration device, belongs to the technical field of refrigeration devices, and solves the problems that when a low-temperature screw compressor continuously operates below-80 DEG C, organic acid generated by hydrolysis of trace moisture and ester lubricating oil and metal chips form colloidal deposition, the resistance of a slide valve is increased, displacement lag is caused, and the service life of the slide valve is prolonged. However, the sensor only feeds back an instruction signal and cannot be monitored by a control system, and finally bearing wear or energy efficiency reduction is caused. Comprising a screw compressor and a slide valve state monitoring circuit arranged in the screw compressor. The actual displacement of the slide valve is measured in real time through double-frequency laser interference, the thickness of jelly is analyzed in combination with acoustic surface wave frequency shift, the fault index is calculated after dynamic compensation, early warning is conducted when the limit is exceeded, a blind area of a traditional sensor is eliminated, diagnosis is conducted in advance, and compressor bearing abrasion is avoided.

The invention relates to a surface acoustic wave filter and a preparation method thereof. The preparation method comprises the following steps: providing a glass substrate; a piezoelectric material layer is provided, the piezoelectric material layer comprises a bonding surface, and a sacrificial layer is formed in the portion, close to the bonding surface, of the piezoelectric material layer; bonding the bonding surface with the glass substrate; removing the piezoelectric material layer on one side, far away from the glass substrate, of the sacrificial layer, and forming a piezoelectric layer on the glass substrate; an interdigital electrode structure is formed over the piezoelectric layer. The surface acoustic wave filter and the preparation method thereof have the advantages of low cost, batch preparation, device miniaturization and high integration, and are particularly suitable for meeting the requirements on high-frequency acoustic devices in scenes such as communication technology, Internet of Things, intelligent terminals and the like.

An intelligent inspection device for a steel structure building comprises an inspection robot body, a multi-mode reader and a surface acoustic wave stress sensor, the surface acoustic wave stress sensor is arranged at a key part of the steel structure building, and the multi-mode reader is arranged on the inspection robot body; an inspection configuration box is arranged at the lower end of the inspection robot body, and an inspection trolley is arranged in the inspection configuration box; an unmanned aerial vehicle parking cabin is arranged at the upper end of the inspection robot body, and an inspection unmanned aerial vehicle is arranged in the unmanned aerial vehicle parking cabin. By arranging the inspection robot body and the inspection trolley and the inspection unmanned aerial vehicle which are matched for use, intelligent inspection is achieved, the inspection robot body moves in the building, and the telescopic detection mechanism is used for scanning steel structure defects of the low-rise building; and a mechanical arm repairing mechanism is used in cooperation for conducting close-range reinspection or temporary repairing on the steel structure defects of the low-rise building, the repairing efficiency and precision are high, the intelligent detection means are improved, the microcrack and hidden corrosion recognition rate is high, and the repairing lag risk is low.

The invention discloses a grain depot intelligent sampling quality inspection system and method, and relates to the technical field of intelligent grain depot detection, and the method comprises the steps: collecting environment data, three-dimensional point cloud data and surface acoustic wave group velocity data, and carrying out the inversion calculation through a Love wave equation, and obtaining a three-dimensional density distribution diagram; calculating the density gradient in the vertical direction according to the three-dimensional density distribution diagram to obtain a stratified sampling parameter table; according to the stratified sampling parameter table, stratified puncturing is conducted on the grain pile, actual sampling depth data are generated, and a three-way sample valve is used for conducting sample distribution detection on the actual sampling depth data. Through layered detection of the three-way sample valve and near-infrared X-ray combined analysis, accurate detection of moisture, protein and heavy metal content is realized, and a detection result is matched with a density distribution diagram through a constrained Kriging interpolation method to generate a quality safety index.

The invention discloses a wireless passive pressure and temperature sensing device and an air leakage prediction method, the device comprises a surface acoustic wave delay line, a temperature sensor, a reference resonator and an antenna module, the surface acoustic wave delay line is used for sensing pressure change, and the resonant frequency of the surface acoustic wave delay line is influenced by external air pressure; the resonant frequency of the temperature sensor mainly reflects the environment temperature; the frequency of the reference resonator is used for comparing with the temperature sensor and calculating a frequency difference to judge a vibration state; and the wireless transceiver module excites the system through a sweep frequency signal, acquires the frequency of the sensor, analyzes the frequency of the surface acoustic wave delay line to obtain a pressure value, and judges the pressure instability or gas leakage precursor by using the frequency difference. According to the wireless passive pressure and temperature sensing device and the air leakage prediction method, the pressure and the temperature can be remotely measured without an external power supply, the device is suitable for long-term monitoring, the equipment fault or leakage risk can be predicted in advance through a vibration analysis function, and the reliability and the safety of a system are improved.

The invention provides a surface acoustic wave filter packaging structure, a preparation method thereof and radio frequency equipment, and relates to the technical field of semiconductors. By arranging the annular enclosing wall structure, the interdigital electrode is located inside the annular enclosing wall structure, the solder ball is located outside the annular enclosing wall structure, after the plastic packaging layer is prepared, the plastic packaging layer at least wraps the solder ball, at the moment, the solder ball is not in an isolated state, and the risk that the solder ball cracks or even falls off is greatly reduced in the cold and hot impact process; and the stability of the packaging structure of the surface acoustic wave filter is improved. According to the surface acoustic wave filter, the interdigital electrode is located in the annular enclosing wall structure, and the annular enclosing wall structure is in contact with the substrate and the bearing substrate in the first direction, so that the interdigital electrode and the bearing substrate are separated from each other, and the separated area is a cavity area of the surface acoustic wave filter; therefore, in the preparation process of the plastic packaging layer, the arrangement of the annular enclosing wall structure can prevent the plastic packaging material from entering the cavity area, and the effective protection of the working area of the packaging structure of the surface acoustic wave filter is realized.

Steel surface treatment and stress detection integrated equipment comprises an equipment main body, and the equipment main body comprises a transportation table, a pretreatment section and a detection section which are connected in sequence; a surface detection mechanism is integrally arranged on the conveying table; the pretreatment section comprises a polishing mechanism and a flushing mechanism; a surface acoustic wave stress detection system is arranged at the tail end of the detection section, and a defect marking device is configured for marking unqualified steel. The surface of the steel is detected and analyzed by the surface detection mechanism when the steel passes through the detection channel, the steel sequentially passes through the grinding channel and the flushing cavity of the pretreatment section, and the grinding mechanism and the flushing mechanism grind the surfaces of the steel on the two sides of the detected weld joint according to the detection and analysis result of the surface detection mechanism; or the surface of the steel is subjected to high-pressure washing treatment, the pretreated steel is conveyed to the detection platform, stress detection is conducted through the dual-mode probe set on the detection platform, and unqualified steel is identified through the programmable ink-jet printer.

The invention discloses a surface acoustic wave (SAW) semiconductor structure with high power tolerance and a preparation process thereof, and the SAW semiconductor structure comprises a polycrystalline silicon layer arranged on a substrate, a temperature compensation layer arranged on the polycrystalline silicon layer, a piezoelectric layer arranged on the temperature compensation layer, and an interdigital electrode formed on the piezoelectric layer. An electrode lead PAD is arranged on the interdigital electrode, and the electrode lead PAD penetrates through the interdigital electrode, the piezoelectric layer and the temperature compensation layer and then is connected with the polycrystalline silicon layer. An electrode lead PAD is in direct contact with a polycrystalline silicon layer or a substrate with a high thermal conductivity coefficient, so that a high-efficiency heat transfer path is formed, and the power tolerance of the device is improved.

The invention belongs to the technical field of microelectronic devices, and particularly relates to a high-performance surface acoustic wave device and a preparation process thereof. Comprising the following steps: preparing a polycrystalline diamond film layer on a low-resistance silicon substrate; preparing a temperature compensation layer on the polycrystalline diamond film layer; helium ions are injected into the bulk piezoelectric precursor to form a piezoelectric film layer to be transferred; the bulk piezoelectric precursor is bonded to the temperature compensation layer through a bonding technology, the piezoelectric film layer is reserved in a heat treatment mode, and a piezoelectric layer is obtained; preparing an interdigital electrode on the surface of the piezoelectric layer; and preparing a protection layer on the surface of the interdigital electrode and the non-designated area of the low-resistance silicon substrate, and etching the low-resistance silicon substrate on the designated area. According to the method, the polycrystalline diamond film layer is prepared on the low-resistance silicon substrate, the polycrystalline diamond film layer has high sound velocity and can restrain energy from leaking to the substrate, and the low-resistance silicon in the designated area is etched to reduce the radio frequency loss of the device, improve the quality factor of the surface acoustic wave device and improve the performance of the surface acoustic wave device.

Described herein are techniques for enhancing isolation in on-chip piezoelectric-based isolators. Several techniques are described that improve isolation in piezoelectric isolators. According to an aspect of the present disclosure, a piezoelectric isolator may include structures arranged to decrease the occurrence of pockets of high electric field and / or to increase the breakdown electric field in the path from the transmitter to the receiver. Further aspects of the present disclosure relate to techniques for increasing the efficiency of piezoelectric isolators while also limiting the formation of spurious signals. The inventors have developed techniques for promoting propagation of surface acoustic waves toward the receiver while limiting propagation in the opposite direction.

The invention discloses a POI substrate and a preparation method and application thereof, and belongs to the technical field of semiconductor preparation. The preparation method of the POI substrate comprises the following steps: S1, placing a supporting layer in a chemical vapor deposition furnace, filling a silane atmosphere, reacting at 580-650 DEG C for 30-120 minutes, growing a polycrystalline silicon thin film, and polishing the polycrystalline silicon thin film; s2, putting the supporting layer on which the polycrystalline silicon is deposited in the step S1 into spatial PEALD for deposition circulation, growing a SiO2 thin film at 60-120 DEG C, then performing annealing treatment, and then polishing the SiO2 thin film; s3, performing ion implantation on the functional layer; and S4, bonding the supporting layer on which the polycrystalline silicon and the SiO2 are deposited in the step S2 with the functional layer on which the ions are injected in the step S3, then performing annealing treatment, and then performing chemical mechanical polishing to obtain the POI substrate. The POI substrate is good in film-forming property and uniformity and good in compactness, and can be used for manufacturing a surface acoustic wave filter with excellent temperature stability and high-power processing.

The invention provides an intelligent temperature control method and system for relieving stress of a glass annealing kiln. The method comprises the following steps: transmitting acoustic surface waves through a distributed sonic sensor to collect stress propagation data in glass, decoupling coupling characteristics of sound velocity and temperature, extracting a relaxation time constant, and generating a stress relaxation rate; performing time difference cross-correlation analysis to construct a stress propagation three-dimensional gradient field, establishing an incidence relation between the relaxation rate and the gradient field, and constructing a mapping strategy of the temperature set value and the relaxation rate according to the incidence relation; generating a dynamic temperature adjusting parameter and converting the dynamic temperature adjusting parameter into a heater power control signal; and dynamically adjusting a stress data feature extraction rule to match a real-time stress state according to the relevance between the gradient field update frequency and the temperature adjustment rate. According to the application, dynamic mutual optimization of the annealing stress elimination efficiency and the kiln temperature setting precision is realized, the glass residual stress is reduced, and the hidden danger of plate explosion is eliminated.

The invention discloses a method for detecting and analyzing the content of liquid flavor substances in a beverage, and belongs to the technical field of beverage quality detection. The method comprises the following steps: obtaining a flavor substance dielectric response signal and a surface acoustic wave propagation signal of a beverage sample, and carrying out correlation mapping integration to form a structured original data set; preprocessing data by adopting ensemble empirical mode decomposition, integrating features through a Bayesian network multi-source data fusion algorithm, and constructing an optimized content calculation model based on a gradient boosting tree algorithm; performing time sequence consistency and dimension matching verification on the data set, and inputting the data set into a model to generate a prediction result; and extracting a related content value, carrying out deviation analysis on the related content value and a preset standard range, calculating a signal feature contribution weight, and outputting a detection report containing standard judgment and deviation traceability. According to the method, the physicochemical characteristics of the flavor substances can be comprehensively represented, accurate prediction and deviation traceability are realized, the comprehensiveness, reliability and efficiency of detection are improved, and powerful support is provided for beverage quality control.

The invention provides a pipettor automatic calibration positioning and accuracy evaluation method based on photoelectric sensing, and relates to the technical field of pipettor calibration, and the method comprises the following steps: arranging an annular photoelectric sensor array to collect interference fringe phase difference, liquid level reflection light signals and surface acoustic wave signals, and adopting a five-step phase shift method to obtain a three-dimensional displacement vector; dynamic calibration is achieved through liquid level morphological parameter analysis in combination with adaptive Kalman filtering, numerical simulation is conducted on the liquid drop forming process through time-frequency analysis and a fluid mechanics model, and finally the accuracy is evaluated through adaptive fuzzy reasoning and Bayesian estimation. According to the invention, high-accuracy automatic calibration and evaluation of the pipettor are realized.

The present invention relates to the fields of ferroelectric single crystal technology and acousto-optical device technology, particularly to a silicon-based lead magnesium niobate (PbMn) single crystal piezoelectric wafer structure, preparation method, and application. The structure comprises a silicon substrate on which a silicon dioxide layer and a single crystal piezoelectric thin film layer are sequentially disposed; the single crystal piezoelectric thin film layer is a PbMn-PT single crystal, including a binary PMN-PT single crystal thin film or a ternary PIN-PMN-PT single crystal thin film. This piezoelectric wafer structure on a silicon substrate can be used to fabricate various high-performance piezoelectric MEMS sensors, actuators, and electro-optical modulator devices. The resulting surface acoustic wave (SAW) filters and thin film bulk acoustic wave (BAW) filters exhibit a relative bandwidth increase of over 50%, and the resulting electro-optical modulators exhibit lower half-wave voltage and higher electro-optical modulation efficiency. The device volume can be reduced by 10 times, better meeting the future 6G communication requirements for higher efficiency, higher integration, and miniaturization of MEMS devices. This provides a novel multilayer piezoelectric wafer structure for the miniaturization and integration of piezoelectric MEMS and optoelectronic devices.

The invention discloses a surface acoustic wave device processing device and method. The surface acoustic wave device processing device comprises a base and a supporting structure. The first guide rails are fixed on two sides of the upper end face of the base; the second guide rail is arranged on the first guide rail in a sliding mode so as to move front and back; the lifting device is arranged on the second guide rail in a sliding manner so as to realize transverse movement; the lower end of each upper glue injection device is connected with a cover plate; the lifting device is used for driving the two upper glue injection devices to do lifting motion; the tray is arranged above the base, two rows of grooves which are arranged in parallel are formed in the upper end face of the tray, and each groove is used for placing a surface acoustic wave device substrate to be processed; the size of the cover plate is matched with that of the groove in the tray so as to cover and seal the groove; compared with the prior art, the method has the remarkable beneficial effects of improving the production efficiency, ensuring the product quality, reducing the production cost and the like.

The invention provides a surface acoustic wave device structure and device, the surface acoustic wave device structure comprises a substrate and an IDT electrode, the IDT electrode is formed on the substrate and comprises two interdigital electrodes which are oppositely arranged, each interdigital electrode comprises a bus bar and a plurality of electrodes, and electrode fingers of different interdigital electrodes are arranged at intervals in a staggered manner. Each electrode finger at least comprises a first metal layer and a second metal layer which are stacked in sequence, and the thickness of the first metal layer in the first region is not smaller than the thickness of the first metal layer in the second region. The propagation velocity of the surface acoustic wave formed by excitation of the IDT electrode is greater than the propagation velocity of the surface acoustic wave formed by excitation of the IDT electrode in the first area, and the effect is equivalent to increase of a suppression load at the extension end of the electrode finger, so that the effect of suppressing a transverse mode can be achieved, and the Q value of the surface acoustic wave device is improved; and the processing technology requirement of the surface acoustic wave device structure is greatly reduced, and the technology cost is reduced.

The invention relates to the technical field of fault detection, and comprises an intelligent fault detection method and system for a surface acoustic wave filter, and the method comprises the following steps: collecting an input signal and an output signal of the surface acoustic wave filter, extracting an independent frequency band, carrying out the statistics of the input and output power of the frequency band, calculating a power ratio, and obtaining a multi-frequency-band energy ratio sequence. According to the method, the fixed bandwidth of input and output signals is decomposed, the energy characteristic analysis of different frequency bands is refined, the abnormal signal capturing capacity is improved, the judgment of the power attenuation rate is optimized by introducing a dynamic threshold value, the recognition adaptability and accuracy are improved, and meanwhile, the recognition accuracy is improved through comprehensive impedance characteristic analysis and change rate monitoring. According to the method, the identification capability of sudden faults is enhanced, energy attenuation and impedance abrupt change points are jointly analyzed, a multi-dimensional fault classification system is constructed, the accuracy of fault identification and effective judgment of complex faults are ensured, and the stability and applicability of overall fault diagnosis of the surface acoustic wave filter are improved.

The invention relates to the fields of information electronic material technology, information communication, wireless radio frequency communication and the like, in particular to a surface acoustic wave device and a preparation method thereof.The preparation method comprises the steps that after a metal film is deposited, patterned stripping is conducted on an interdigital electrode layer, and when patterned stripping is conducted on the interdigital electrode layer, a non-closed release window is formed; partially overlapping the thickened electrode layer from the direction of the non-closed release window to form a closed release window; etching the piezoelectric film exposed in the closed release window to form a release hole; and the sinking material is further released through the release holes so as to form a suspended piezoelectric film. According to the invention, by optimizing the patterning design and the processing flow of the resonator membrane structure, the release window in the bus bar region is efficiently stripped, the stripping processing difficulty of the bus bar electrode is reduced, and the stripping success rate of the bus bar electrode is improved.