2821 results about "Metal electrodes" patented technology

The invention relates to a D2NNs-based terahertz phased array device and an implementation method thereof. The phased array device comprises an active modulation layer and a two-layer metasurface layer structure. The active modulation layer mainly comprises a patterned micro-nano metal electrode and an active functional material, and the optical property of the active functional material is adjusted through external voltage, so that light beam output with specific phase distribution is realized in a terahertz wave band. The metasurface layers are composed of silicon column structure arrays located on the surface of the substrate, the two metasurface layers can finely control complex electric field distribution of a specific diffraction plane, and an optical diffraction neural network architecture is constructed. The phase distribution of the metasurface layer is optimized by using gradient descent and back propagation algorithms in the neural network for each required regulation and control mode, and active regulation and control in a specific light beam direction can be realized under the driving of different voltages. According to the invention, the problems of the terahertz phased array technology in the aspects of regulation and control precision, continuity and the like are solved, and a more efficient and flexible beam regulation and control method is provided.

The invention relates to the technical field of solar cells, and particularly discloses a TBC solar cell structure and a preparation method thereof, and the preparation method comprises the steps of double-sided polishing, deposition and diffusion, laser treatment, etching treatment, acid pickling and texturing, deposition passivation and antireflection film, screen printing of an electrode, sintering and the like on a silicon wafer. Wherein the laser processing comprises at least one of a BSG layer process of a non-metal electrode area of a laser scanning P area and a PSG layer process of a non-metal electrode area of a laser scanning N area. According to the TBC solar cell, the secondary process is carried out on the non-metal electrode area on the back face of the cell piece through the laser, effective thinning of the poly layer of the non-metal electrode area of the TBC solar cell is achieved, the problems of optical parasitic absorption and current loss caused by the fact that the poly layer is too thick in the prior art are solved, and the conversion efficiency and the overall performance of the cell are improved.

The invention discloses a preparation method and application of a novel ionized water gel-based moisture power generation material. The material is composed of a carbon coating fabric, ionized water gel and a patch metal electrode. Wherein the nano carbon black is used as a conductive filler of the hydrogel and can enhance electric energy output by promoting functional group dissociation and ion migration. The high-hygroscopicity sea salt in the hydrogel can enhance the capture and transmission capability of the material on water molecules in the atmosphere, and ensures the continuous power output capability of the moisture power generation material. Due to the design of the zigzag dry-wet interface, the wettability between the hydrogel and the carbon black coating can be improved, the moisture absorption rate is increased, the contact area is increased, and therefore the power generation power is improved. The metal patch electrode can ensure the stability of long-term power generation of the material, and can be customized to reduce the contact resistance. A moisture power generation device prepared from the material can be used as a passive energy supply device and is suitable for the fields of self-powered sensors, wearable electronic equipment and the like.

The invention belongs to the field of electric heating materials, and discloses an electric heating element and electrode integrated material based on a fiber woven structure, an electric heating composite material and a preparation method thereof. An electric heating element and an electrode in the material are made of integrated fiber woven fabric. The electrode area is composed of a high-conductivity carbon fiber woven structure, and the high-conductivity characteristic of the electrode area is obtained through in-situ growth of graphene on the fiber surface through chemical vapor deposition; the electric heating area is composed of fiber cloth with a certain conductive characteristic. According to the fiber electric heating / electrode integrated woven structure, an extra electrode is prevented from being used in an electric heating material structure, and the problems of combination and connection of the electrode and the electric heating material and the defect of poor contact are solved. Meanwhile, the electric heating / electrode fiber integrated woven structure retains the integrity of a fiber electric heating element / electrode fabric, solves the problem of mismatching of material modulus, thermal expansion coefficient and the like caused by the use of a metal electrode, and can be applied to the fields of electric heating resin-based fiber composite materials, electric heating ice prevention and removal and the like.

The invention discloses a semiconductor device based on two-dimensional semi-metal interface optimized contact and a preparation method thereof, which are applied to devices including a two-dimensional semiconductor-based metal-semi contact structure, such as thin film transistors, Schottky junction diodes / transistors and the like. According to the invention, the two-dimensional semi-metal interface layer is introduced between the metal electrode (source and drain electrodes) and the two-dimensional material (conductive channel) through PVD and CVD processes, so that pollution and defects caused by additional transfer steps are avoided, preparation of the interface layer with large area, high uniformity and controllable thickness can be realized, and industrial requirements are met. According to the semiconductor device provided by the invention, the two-dimensional semimetal is introduced as the interface layer, so that the contact resistance between the source and drain electrodes and the conductive channel is obviously optimized, Fermi level pinning is eliminated, and the adjustable Schottky barrier height is realized; and a brand new solution is provided for development and industrial application of a metal-semiconductor contact structure device of a high-performance two-dimensional semiconductor.

The invention belongs to the field of MEMS sensors, and particularly relates to a low-temperature-drift MEMS resonant pressure sensor sensitive chip and a preparation method thereof. Comprising a cap layer, a resonance layer, a pressure sensing layer and an isolation base which are sequentially bonded and connected from top to bottom, the cap layer is provided with an electrode through hole and a vacuum cavity groove, and a getter is sputtered in the vacuum cavity groove; two Si-SiO2 composite resonators and a plurality of lead wire discs are arranged on the resonance layer, and a metal electrode is arranged on each lead wire disc; the number of the metal electrodes is equal to that of the cap layer electrode through holes, and the metal electrodes are located under the electrode through holes; two groups of silicon islands are arranged on the front surface of the pressure sensing layer, and three rectangular sensitive films with the same size are arranged on the back surface; the isolation base is a glass table; according to the invention, the output sensitivity of the sensor is greatly improved, the chip processing complexity is reduced, and the introduction of additional stress and materials is reduced.

The invention relates to the technical field of solar cell preparation, and discloses a laser patterned polycrystalline silicon passivation cell, a preparation method and a photovoltaic module. The preparation method comprises the following steps: preparing a passivation contact structure and an oxidation film on the surface of a silicon substrate; laser patterning processing is carried out on the surface of the silicon substrate, the passivation contact structure and the non-metallization area of the oxidation film, so that the processed non-metallization area is not subjected to alkali etching resistance, and doping atoms are pushed into the silicon substrate through laser diffusion to form a doping area; performing alkali wash etching to form an alkali wash etching region etched into the silicon substrate, and leaving a doped region on the silicon substrate exposed in the alkali wash etching region; respectively depositing a passivation antireflection film and an antireflection film on the front surface and the back surface of the silicon substrate; and preparing the metal electrode. According to the preparation method, parasitic absorption loss can be avoided, the transverse transmission capability of internal carriers can be enhanced, the light utilization rate and the photoelectric conversion efficiency of the cell are further improved, the process window is larger, and the process steps are simple.

The invention provides a surface grating surface emitting laser. The surface grating surface emitting laser comprises an N-face metal electrode layer; an N-face waveguide layer, an active layer, a P-face waveguide layer and a ridge waveguide layer are sequentially stacked on the N-face metal electrode layer, wherein the ridge waveguide layer comprises a gain region and a loss region; the P-surface metal electrode layer is arranged on the gain region of the ridge waveguide layer; and the P-surface silicon dioxide layer is arranged on the loss region of the ridge waveguide layer. According to the laser, through the characteristic that mode fields are distributed in a loss area and a gain area after PT symmetric breaking, a light field achieves surface light emitting through vertical diffraction coupling of surface gratings of the loss area, and the laser is different from a common laser structure in which gratings are completely etched in the longitudinal direction and electrodes are manufactured on the two sides. The mode gain difference is symmetrically manufactured through PT, double lobes are eliminated, a single mode is stabilized, lambda / 4 phase shift does not need to be introduced, and the process difficulty is reduced.

The invention relates to a contact main guide field enhanced flexible capacitive pressure sensor and a preparation method thereof, the contact main guide field enhanced flexible capacitive pressure sensor comprises an elastomer composite electrode and a composite dielectric layer, the elastomer composite electrode is formed by compounding an elastomer electrode and a metal electrode, the elastomer electrode is an elastomer prepared from polydimethylsiloxane and a carbon nanotube composite material, a multi-scale microstructure is formed on the outer surface, facing the composite dielectric layer, of the elastomer electrode, and the metal electrode is a metal layer evaporated on the surface of the multi-scale microstructure; the composite dielectric layer is formed by compounding an inorganic metal oxide dielectric layer and an organic dielectric layer in an upper and lower layer structure. The contact dominant field enhanced flexible capacitive pressure sensor provided by the invention has the characteristics of relatively high sensitivity, relatively high linear responsivity, relatively wide sensing range and relatively good mechanical stability, and is wide in application prospect.

The invention discloses a nonlinear Hall terahertz rectifying device which comprises a substrate, an oxide layer, an absorption layer and an electrode from bottom to top. The substrate is made of intrinsic high-resistance silicon, the oxide layer is made of silicon dioxide, the absorption layer is a Weel semimetal film, and the electrode is a four-end metal electrode. The Weel semimetal thin film is a niobium iridium tellurium (NbIrTe4) thin film. A cross-shaped structure is etched on the niobium-iridium-tellurium thin film, and a four-end metal electrode is manufactured through electron beam exposure, electron beam evaporation and a stripping technology. According to the invention, a simple cross-shaped geometric structure on Weel semimetal is utilized to couple an oscillating terahertz light field radiated along the longitudinal direction, and the generation of a direct current electric signal at the transverse end is realized through a nonlinear Hall effect induced by the Bell curvature, and the process does not involve the help of any external field. According to the invention, the broadband terahertz response of 0.02-0.82 THz is realized, the power consumption is low, and integration is facilitated.

The invention provides a synthetic antiferromagnetic memory cell driven by spin orbit moment without magnetic field assistance, and belongs to the technical field of magnetic memory, the synthetic antiferromagnetic memory cell comprises a magnetic tunnel junction of a multilayer film structure, the magnetic tunnel junction comprises a heavy metal layer and a synthetic antiferromagnetic free layer located on the heavy metal layer; the tunneling insulating layer is located on the synthetic antiferromagnetic free layer, the reference layer is located on the tunneling insulating layer, and the metal electrode layer is located on the reference layer; wherein the synthetic antiferromagnetic free layer comprises an inclined vertical magnetic layer, a non-magnetic metal layer and a coupling magnetic layer which are stacked in sequence, and the inclined vertical magnetic layer and the coupling magnetic layer are subjected to antiferromagnetic coupling through the middle non-magnetic metal layer; the inclined perpendicular magnetic layer has inclined perpendicular anisotropy. According to the invention, deterministic magnetization flipping driven by spin orbit moment and resistance state control of the magnetic tunnel junction memory cell without the assistance of an external magnetic field are realized.

The invention discloses a thin film device for inhibiting signal crosstalk between pixels, a photosensitive device and a display device, and the thin film device comprises a bottom metal electrode array and a metal compound semiconductor thin film array which are formed by carrying out the single photoetching patterning processing of a bottom metal electrode layer and a metal compound semiconductor thin film layer which are disposed on a backboard. The continuous / non-patterned active layer, the continuous / non-patterned upper charge transfer layer, the continuous / non-patterned top metal electrode layer and the continuous / non-patterned transparent packaging layer are sequentially stacked on the patterned metal compound semiconductor thin film array from bottom to top; wherein the metal compound semiconductor film covers the upper surface of the bottom metal electrode; the compact and pinhole-free metal compound film is formed by carrying out surface chemical reaction on the side surface of the bottom metal electrode; the metal compound film serves as a pixel isolation structure to wrap the whole side face of the bottom metal electrode so as to restrain signal crosstalk between adjacent pixels.

The invention provides a pressure sensor based on silicon-silicon bonding and a preparation method thereof. The preparation method comprises the following steps: providing a low-resistance silicon wafer, forming a silicon deep hole in a first surface of the low-resistance silicon wafer, and depositing an isolation material in the silicon deep hole to form an isolation ring; etching the first surface to form a shallow groove and a conductive silicon column to obtain a low-resistance cap wafer; providing an SOI wafer, performing ion implantation on the first surface of the SOI wafer to form a resistance region, and obtaining a substrate wafer; bonding the low-resistance cap wafer with the substrate wafer; grinding the second surface of the low-resistance cap wafer until the isolating ring is exposed; depositing an insulating layer on the second surface of the low-resistance cap wafer, and forming a metal electrode on the insulating layer; and forming a back cavity structure on the second surface of the substrate wafer, exposing the top silicon of the SOI wafer, and forming a sensitive film layer. The conductive silicon column is made of low-resistance silicon, copper ion pollution is avoided, the preparation process is simple, and the period is controllable; the device obtained based on the silicon-silicon bonding process has high bonding strength and high air tightness.

The invention discloses a quasi one-dimensional (TaSe4) 2I and two-dimensional MoTe2 mixed-dimensional heterojunction phototransistor detector and a preparation method thereof, the detector sequentially comprises a Si substrate, a SiO2 gate dielectric layer, a quasi one-dimensional (TaSe4) 2I and two-dimensional MoTe2 nano film from bottom to top, the quasi one-dimensional (TaSe4) 2I and MoTe2 nano film are respectively provided with a metal electrode, and a heterostructure of the (TaSe4) 2I, the MoTe2 and the metal electrodes is formed. The preparation method comprises the following steps: (1) transferring the (TaSe4) 2I nanowire to the Si substrate; (2) transferring the MoTe2 nano film to one side of the (TaSe4) 2I nanowire; (3) preparing a pattern of a bottom electrode; (4) positioning, exposing and developing the pattern of the bottom electrode to expose the electrode part needing to be evaporated; and (5) preparing a metal electrode. According to the invention, the composite effect of a (TaSe4) 2I / MoTe2 heterojunction is utilized, and dark current is inhibited through a vertical structure; moTe2 is utilized to increase light absorption, and meanwhile, grid voltage is applied, so that light current is improved, and high responsivity and external quantum efficiency are obtained.

Methods, apparatus, devices, subsystems, and systems related to irregular devices and methods for designing and fabricating the irregular devices are provided. In one aspect, a device includes: a backplane comprising a plurality of circuits and a plurality of elements arranged on the backplane. Each of the plurality of elements includes a metallic electrode. Each of the metallic electrodes is coupled to a respective circuit of the plurality of circuits in the backplane through a corresponding via of a plurality of vias, and a position relationship between the metallic electrode and the corresponding via satisfies one or more criteria.

The invention relates to the technical field of non-dispersive infrared gas sensors, in particular to a Van der Waals photoelectric detector, a preparation method and application thereof and a non-dispersive infrared gas sensor. The invention provides a Van der Waals photoelectric detector. The Van der Waals photoelectric detector comprises a substrate layer, a heterojunction layer and a double-end metal electrode layer, the heterojunction layer is of a heterojunction structure formed by partially embedding a first Van der Waals material layer into the bottom of a second Van der Waals material layer, the whole bottom of the first Van der Waals material layer is in contact with the upper surface of the substrate layer, and part of the bottom of the second Van der Waals material layer is in contact with the upper surface of the substrate layer; the double-end metal electrode layer comprises a first metal electrode and a second metal electrode, the first metal electrode is located on the surface of the first Van der Waals material layer, and the second metal electrode is located on the surface of the second Van der Waals material layer. The Van der Waals photoelectric detector has extremely low interface defects and relatively low thermal noise.

The invention discloses high-crystallinity superfine nickel powder and a preparation method thereof.The generation size of nickel powder in a liquid phase is adjusted through ultrasonic waves, molten salt heat treatment is combined to obtain the high-crystallinity superfine nickel powder, and the preparation method specifically comprises the following steps that an aqueous solution in which a nickel precursor is dissolved is mixed with a reducing agent; under the action of ultrasonic waves, an alkaline solution is added for a reaction, and nickel powder particles with the adjustable particle size are prepared; and then uniformly mixing the nickel powder with combined salts in different proportions, carrying out heat treatment at different temperatures, and cleaning and separating a cooled product to finally obtain the high-crystallinity superfine nickel powder with the size of 100-200nm. The nickel powder has good size uniformity, oxidation resistance and thermal shrinkage resistance, and can be applied to various fields such as conductive paste, metal electrodes and magnetic shielding materials.

The invention discloses a perovskite solar cell based on perovskite thin film crystallization control and a preparation method thereof, and the method comprises the steps: carrying out the spin coating and deposition of a hole transport layer on conductive glass, customizing and synthesizing small organic molecules with different functional groups through a Michael addition reaction, and taking the small organic molecules as a perovskite precursor additive to prepare a perovskite precursor solution; the perovskite thin film is prepared on the indium tin oxide transparent conductive glass deposited with the hole transport material through an anti-solvent method, and after annealing treatment, the thin film is flat and compact in surface, large in grain size and low in defect state density, and the crystal orientation is perpendicular to a substrate. Spin-coating the passivation layer precursor solution to form a passivation layer; performing vacuum thermal evaporation on the passivation layer to form an electron transport layer material; and sequentially carrying out thermal evaporation on a barrier layer material and a metal electrode on the electron transport layer material to obtain the perovskite solar cell. The prepared trans-perovskite solar cell has excellent photoelectric conversion efficiency and excellent device stability.

The invention discloses a micro-fluidic liquid cooling heat dissipation module integrated with piezoelectric driving, a chip and application, and belongs to the technical field of chip liquid cooling heat dissipation. The micro-fluidic liquid cooling heat dissipation module comprises a micro-fluidic substrate and a piezoelectric film, the piezoelectric film covers the surface of one side of the microfluidic substrate; a groove channel is formed in the surface of one side, facing the piezoelectric film, of the micro-fluidic substrate; a loop cavity defined by the piezoelectric film and the groove channel forms a micro-channel; a metal electrode layer, a heat source area and a heat exchange area are respectively arranged at different positions, corresponding to the micro-channel, on the surface of one side, deviating from the micro-fluidic substrate, of the piezoelectric film. The micro-fluidic liquid cooling heat dissipation module can actively drive the cooling liquid to flow to a heat source area, and compared with a traditional micro-channel heat dissipation mode, the micro-fluidic liquid cooling heat dissipation module has very high flexibility in fluid driving, does not need an external driving pump, can greatly reduce the size of a packaged chip, and is beneficial to development of chip integration and microminiaturization.

The invention discloses a preparation method of a multilayer co-fired ceramic disc of an electrostatic chuck, and belongs to the technical field of electrostatic chucks, and the preparation method comprises the following steps: S1, preparing organic suspension ceramic slurry with certain viscosity and uniform dispersion; s2, the ceramic slurry is manufactured into a ceramic green sheet with a certain thickness in a tape casting mode; s3, various holes are formed in the ceramic green sheet; s4, preparing metal electrode slurry; s5, metal conduction slurry is filled in the interconnection conduction holes of the green body sheet in a hole filling mode, and an adsorption electrode layer, a heating electrode layer, a parallel electrode layer and an interconnection conduction Pad are manufactured in a silk-screen printing mode; s6, green body blocks are manufactured; s7, laminating together by using a laminating machine in a positioning and laminating manner; s8, the laminated green ceramic plates are placed in a debinding furnace for glue discharging; and S9, performing high-temperature sintering in a high-temperature sintering furnace to obtain the ceramic.

The utility model provides a TOPCON cell structure, which belongs to the technical field of solar cells and comprises an N-type silicon substrate, and a tunneling silicon oxide layer, a transparent conducting layer, a polycrystalline silicon layer, a back silicon nitride layer and a back metal electrode are sequentially arranged on the back of the N-type silicon substrate from inside to outside. A P-type emitting electrode, an aluminum oxide film layer, a front silicon nitride layer and a front metal electrode are sequentially arranged on the front surface of the substrate from inside to outside; a rough structure is arranged on the surface, connected with the polycrystalline silicon layer, of the transparent conducting layer. The ultrathin transparent conductive layer is inserted between the silicon oxide layer and the polycrystalline silicon layer, the interface, adjacent to the silicon oxide layer, of the transparent conductive layer is a plane, and the interface, adjacent to the polycrystalline silicon layer, of the transparent conductive layer is a rough diffuse reflection surface, so that the direction of light rays incident to the surface can be randomized, the total reflection proportion is increased, and the light ray escape loss is reduced; therefore, the light absorption effect is improved and the cell conversion efficiency is improved.

The invention discloses a multicolor photoelectric response synaptic device and a preparation method thereof. The multicolor photoelectric response synaptic device is of a multi-layer structure. The multilayer structure comprises a transparent conductive electrode layer, a hole transport material layer, a lead-free perovskite layer, an electron transport material layer, an organic semiconductor charge transfer compound layer and a metal electrode layer in sequence along the light incidence direction. The preparation method comprises the steps of preparing the transparent conductive electrode layer; sequentially preparing a hole transport material layer, a lead-free perovskite layer, an electron transport material layer and an organic semiconductor charge transfer compound layer on the transparent conductive electrode layer through a spin coating method; and preparing the metal electrode layer on the organic semiconductor charge transfer compound layer through vacuum evaporation. The multicolor photoelectric response synaptic device is reasonable in structural design, can realize ultraviolet-visible-near infrared multicolor photoelectric synaptic function simulation, can realize a color identification function on red light, green light and blue light in a visible light wave band, and has a good application prospect.

The invention relates to the technical field of photovoltaic cells, and provides copper electrode slurry, a metal electrode, a preparation method of the metal electrode and a photovoltaic cell. The copper electrode slurry comprises a metal composition, a dispersion reducing agent, a composite curing agent and an optional solvent, the metal composition at least comprises copper powder and optional gold powder and / or silver powder; the composite curing agent comprises thermosetting resin and a latent curing agent; wherein the mass ratio of the metal composition to the composite curing agent is (7-30): 1. The copper electrode paste provided by the invention replaces expensive silver paste, so that the manufacturing cost of a solar cell energy electrode is greatly reduced. According to the method for preparing the metal electrode, the position of the copper electrode can be precisely machined, damage to the amorphous silicon layer is avoided, remelting and solidification of the copper electrode are achieved through multiple times of laser scanning, and the problem that the adhesive force between the copper electrode and the substrate is poor is effectively solved.

The invention belongs to the technical field of solar cells, and provides a photovoltaic cell back surface processing method, a TOPCon cell, a preparation method and a photovoltaic module. According to the photovoltaic cell back surface treatment method, through polishing treatment of the back surface of a silicon substrate, oxidation treatment is carried out on a doped polycrystalline silicon layer in a non-metallization area in sequence, the oxidation treatment depth is controlled to reach the tail of a doped polycrystalline silicon band so as to form a silicon oxide layer in the non-metallization area, and subsequent acid pickling is carried out. The reflectivity of the back surface of the doped polycrystalline silicon band tail in the non-metallization region is higher than that of the back surface of the doped polycrystalline silicon layer in the metallization region; therefore, the back metal electrode adhesion performance and the metal contact performance of the metallization region on the back of the cell can be further improved, the passivation effect and the light secondary reflection absorption effect of the non-metallization region on the back of the cell can be further improved, and parasitic absorption can be reduced, so that the photoelectric conversion efficiency of the cell can be greatly improved.

The invention discloses a TBC solar cell and a preparation method thereof. The preparation method of the TBC solar cell comprises the following steps: cleaning and polishing an N-type silicon substrate; depositing a first tunneling oxide layer and a first intrinsic polycrystalline silicon layer on the back surface; boron diffusion; performing laser grooving, etching and cleaning; depositing a second tunneling layer and a second intrinsic polycrystalline silicon layer on the back surface; phosphorus diffusion; performing laser grooving, etching and cleaning; depositing an aluminum oxide film and an anti-reflection film on two sides; and preparing a metal electrode. According to the invention, the phosphorus-doped polycrystalline silicon layer is added on the boron-doped polycrystalline silicon layer, the second tunneling layer of the interlayer can form a secondary gettering effect, and the passivation level of the boron-doped polycrystalline silicon layer is improved. A built-in electric field formed by the two PN junctions generates more carriers, more holes are forced to be gathered and transversely transmitted at the boron-doped polycrystalline silicon layer and more easily collected by a metal electrode, and a back suede structure and a carrier collection optimization structure are added on the basis of not increasing the process flow.

The invention discloses an ultra-compact near-infrared circularly polarized photoelectric detector, which comprises an upper metal electrode plating layer, a lower metal electrode plating layer, a semiconductor substrate, a hexagonal close packing array substrate and a chiral super-surface layer, and can realize rapid and high-responsivity near-infrared circular polarization dependent light detection, and light signals can be directly converted into visible electric signals under zero bias voltage; different photoelectric signal conversion effects can be generated from different directions under irradiation of light with different wavelengths, and reference is provided for preparation of a multi-mode near-infrared circularly polarized photoelectric detector. The invention also discloses a preparation method of the ultra-compact near-infrared circularly polarized photoelectric detector, the preparation method is simple and convenient, the cost is relatively low, batch preparation can be realized, and the produced ultra-compact near-infrared circularly polarized photoelectric detector has the characteristics of high light absorbance, quick response and ultrahigh integration level.

The invention provides a compound containing a silicon group and an organic electroluminescent device thereof, and particularly relates to the technical field of organic electroluminescent materials. When the compound containing the silicon group is used as a covering layer material, the glass transition temperature is high, the thermal stability and the chemical stability are good, the light transmittance of a device can be improved, aging of the device is delayed, and therefore the service life of the device is effectively prolonged; and the compound has weak metal adsorption capacity, and can effectively inhibit the deposition of a metal electrode material on the surface of a nucleation inhibition layer when being applied to the nucleation inhibition layer, thereby improving the performance of the device. In conclusion, the silicon group-containing compound provided by the invention can be widely applied to the fields of panel display and the like, and has a good development prospect.

The invention discloses a flexible pressure sensor based on a liquid metal electrode and a preparation method thereof, and relates to the technical field of flexible sensing. The flexible pressure sensor comprises a liquid metal electrode layer and an ionic dielectric layer. The liquid metal electrode layer comprises an upper electrode layer and a lower electrode layer. The upper electrode layer comprises an upper electrode packaging layer, an upper electrode adhesion layer and an upper liquid metal layer; the lower electrode layer comprises a lower liquid metal layer, a lower electrode adhesion layer and a lower electrode packaging layer; the ionic dielectric layer is disposed between the upper liquid metal layer and the lower liquid metal layer. Liquid metal with high conductivity and ductility is used as a sensing electrode, the wettability difference between the liquid metal electrode and a sensor substrate and between the liquid metal electrode and a middle dielectric layer is comprehensively utilized, and the characteristic that the substrate and the middle dielectric layer have rigidity gradient is utilized, so that the stability of the liquid metal electrode structure in the pressure circulation action process is ensured; and the interface double-electric-layer capacitor is prevented from being interfered by mechanical deformation such as stretching, bending and folding.

The invention belongs to the technical field of back contact cell preparation, and particularly relates to a back contact cell of an opening semiconductor without etching and a preparation method thereof, and the method comprises the steps: S103, carrying out the polishing or texturing of the back surface of a silicon wafer obtained in S102; s104, depositing an intrinsic crystalline silicon layer on the back surface of the silicon wafer; s105, the non-target deposition area is masked through a hard mask plate, and N-type crystalline silicon layers which are alternately arranged are deposited on the back face; replacing the mask of the hard mask plate to form a P-type crystalline silicon layer and an overlapping region; s106, depositing a conductive film layer on the back surface of the silicon wafer; s107, an opening is formed in the conductive film layer to form an isolation groove, and the width W4 of the isolation groove is controlled to range from 0.03 mm to 0.15 mm; and S108, forming a metal electrode on the back surface. According to the invention, the back semiconductor does not need to be opened by etching, the technological process is greatly simplified, etching damage is avoided, and the cell conversion efficiency, the cell stability and the production yield are improved.

The invention belongs to the technical field of photoelectric detection, and discloses a heterojunction dual-band photoelectric detector based on a two-dimensional material, which comprises a substrate layer, an insulating layer, a molybdenum disulfide layer, graphene, black phosphorus and a metal electrode, the insulating layer is formed above the substrate layer, the molybdenum disulfide layer is located above the insulating layer, the molybdenum disulfide layer is formed above the insulating layer, no less than two layers of graphene are arranged above the molybdenum disulfide layer, and the top layer is multi-layer black phosphorus; the molybdenum disulfide layer, the graphene and the black phosphorus are in contact through Van der Waals force, a source electrode and a drain electrode of a formed heterostructure are connected with the metal electrode, and the molybdenum disulfide layer and the black phosphorus are isolated through the graphene and do not make contact with each other. In the invention, the intrinsic dark current in direct proportion to the effective transmission volume of the device is greatly reduced, and meanwhile, the current carriers are limited in a two-dimensional plane and are very easy to regulate and control by a local electric field, so that the dark current of the device can be further reduced, and the problem that the detector prepared from most traditional materials needs refrigeration at present can be solved.