8470 results about "Metal electrodes" patented technology

A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.

A touch panel module in which a conductive film in which a mesh conductive layer composed of a mesh-like metal electrode is formed on a support, a λ / 4 plate, a polarizing plate, and a protective layer are arranged in this order. A λ / 4 plate is further arranged on a side of the conductive film opposite to the protective layer. The touch panel module has a visible light diffuse reflectivity of 2% or less, which is measured from the protective layer.

A neurostimulating lead is provided for use in stimulating the spinal chord, spinal nerves, or peripheral nerves or for use in deep brain stimulation that comprises an elongated, flexible lead having improved steerability properties. The lead includes a plurality of thin-film metal electrodes connected by conductors embedded within the wall of the lead to electrical contacts at the proximal end of the lead. The lead is further designed to include an internal lumen for use with a guidewire in an over-the-wire lead placement.

A process for producing metal nitride thin films comprising doping the metal nitride thin films by atomic layer deposition (ALD) with silicon or boron or a combination thereof. The work function of metal nitride thin films, which are used in metal electrode applications, can efficiently be tuned.

A non-volatile solid state resistive device that includes a first electrode, a p-type poly-silicon second electrode, and a non-crystalline silicon nanostructure electrically connected between the electrodes. The nanostructure has a resistance that is adjustable in response to a voltage being applied to the nanostructure via the electrodes. The nanostructure can be formed as a nanopillar embedded in an insulating layer located between the electrodes. The first electrode can be a silver or other electrically conductive metal electrode. A third (metal) electrode can be connected to the p-type poly-silicon second electrode at a location adjacent the nanostructure to permit connection of the two metal electrodes to other circuitry. The resistive device can be used as a unit memory cell of a digital non-volatile memory device to store one or more bits of digital data by varying its resistance between two or more values.

A plasma processing system 10 includes a processing chamber 100, a microwave source 900 that outputs a microwave, an inner conductor of a coaxial waveguide 315a that transfers the microwave, a through-hole 305a, a dielectric plate 305 that transmits the microwave transferred through the inner conductor 315a and discharges it into a processing chamber 100, and a metal electrode 310 that is coupled to the inner conductor 315a via the through-hole 305a, the metal electrode 310 being exposed on the surface of the dielectric plate 305 that faces the substrate with at least a portion of the metal electrode 310 being adjacent to the surface of the dielectric plate 305 that faces the substrate. A surface of the exposed surface of the metal electrode 310 is covered by the dielectric cover 320.

Active metal and active metal intercalation electrode structures and battery cells having ionically conductive protective architecture including an active metal (e.g., lithium) conductive impervious layer separated from the electrode (anode) by a porous separator impregnated with a non-aqueous electrolyte (anolyte). This protective architecture prevents the active metal from deleterious reaction with the environment on the other (cathode) side of the impervious layer, which may include aqueous or non-aqueous liquid electrolytes (catholytes) and / or a variety electrochemically active materials, including liquid, solid and gaseous oxidizers. Safety additives and designs that facilitate manufacture are also provided.

Disclosed herein is a structure of a touch panel capable of solving a depletion problem of resources used for a transparent conductive layer, in particular, improving a moiré phenomenon occurring during a image projection process when a metal electrode in a mesh shape is formed on both surfaces of the transparent substrate, by replacing ITO and forming electrodes using a metal thin film on which fine patterns are formed. Exemplary embodiments of the present invention can improve the moiré phenomenon occurring due to overlapping lines between the top and bottom metal electrodes on the transparent substrate during the image projection process and can improve the visibility by minimizing overlapping lines between the metal electrode formed on the transparent substrate and the pixel grid or the black matrix formed on the color filter.

A capacitor structure comprising a bottom electrode, an insulator and a top electrode, and method for manufacturing the same. The bottom and top electrodes preferably include a metal portion and a conducting oxygen-containing metal portion. In one embodiment, a layer of ruthenium is deposited to form a portion of the bottom electrode. Prior to deposition of the insulator, the ruthenium is annealed in an oxygen-containing environment. The insulator is then deposited on the oxygen-containing ruthenium layer. Formation of the top electrode includes depositing a first metal on the insulator, annealing the first metal and then depositing a second metal. The first and second metals may be ruthenium.

A semiconductor device includes a semiconductor chip and a printed circuit board. Metal electrodes of the semiconductor chip and the internal connection terminals of the printed circuit board are electrically connected through the metallic joining via precious metal bumps. A melting point of a metal material constituting each of the metallic joining parts is equal to or higher than 275 degrees, and a space defined between the chip and the board is filled with resin (under fill) containing 50 vol % or more inorganic fillers.

The present invention discloses a novel transistor structure employing semiconductive metal oxide as the transistor conductive channel. By replacing the silicon conductive channel with a semiconductive metal oxide channel, the transistors can achieve simpler fabrication process and could realize 3D structure to increase circuit density. The disclosed semiconductive metal oxide transistor can have great potential in ferroelectric non volatile memory device with the further advantages of good interfacial properties with the ferroelectric materials, possible lattice matching with the ferroelectric layer, reducing or eliminating the oxygen diffusion problem to improve the reliability of the ferroelectric memory transistor. The semiconductive metal oxide film is preferably a metal oxide exhibiting semiconducting properties at the transistor operating conditions, for example, In2O3 or RuO2. The present invention ferroelectric transistor can be a metal-ferroelectric-semiconductive metal oxide FET having a gate stack of a top metal electrode disposed on a ferroelectric layer disposed on a semiconductive metal oxide channel on a substrate. Using additional layer of bottom electrode and gate dielectric, the present invention ferroelectric transistor can also be a metal-ferroelectric-metal (optional)-gate dielectric (optional)-semiconductive metal oxide FET.

Projections / depressions forming a two-dimensional periodic structure are formed in a surface of a semiconductor multilayer film opposing the principal surface thereof, while a metal electrode with a high reflectivity is formed on the other surface. By using the diffracting effect of the two-dimensional periodic structure, the efficiency of light extraction from the surface formed with the projections / depressions can be improved. By reflecting light emitted toward the metal electrode to the surface formed with the projections / depressions by using the metal electrode with the high reflectivity, the foregoing effect achieved by the two-dimensional periodic structure can be multiplied.

The present invention relates to arc welding torch and a method of extracting fume gas from a welding site. The torch comprises a metal electrode and at least one shield gas port adapted to direct a shield gas curtain around the metal electrode and a welding site. At least one shroud gas port is spaced radially outward from the shield gas port and adapted to impart to an exiting shroud gas a radially outward component of velocity. Fume gas is preferably extracted from a position radially intermediate the shield gas curtain and the shroud gas curtain.

The present invention provides a method and associated structure for forming an electrostatically-doped carbon nanotube device. The method includes providing a carbon nanotube having a first end and a second end. The method also includes disposing a first metal contact directly adjacent to the first end of the carbon nanotube, wherein the first metal contact is electrically coupled to the first end of the carbon nanotube, and disposing a second metal contact directly adjacent to the second end of the carbon nanotube, wherein the second metal contact is electrically coupled to the second end of the carbon nanotube. The method further includes disposing a first metal electrode adjacent to and at a distance from the first end of the carbon nanotube, wherein the first metal electrode is capacitively coupled to the first end of the carbon nanotube, and disposing a second metal electrode adjacent to and at a distance from the second end of the carbon nanotube, wherein the second metal electrode is capacitively coupled to the second end of the carbon nanotube. The method still further includes selectively applying a first bias to the first metal electrode to electrostatically dope the first end of the carbon nanotube and selectively applying a second bias to the second metal electrode to electrostatically dope the second end of the carbon nanotube.

A display device including a display unit and a circuit unit for driving the display unit, in which the display unit includes a flexible substrate and can be housed by rolling and drawn out in a predetermined direction, one electrode is a metal electrode, and the other electrode is a stripe-shaped electrode comprising a metal oxide, and a long side of the stripe is disposed perpendicular to a rolling direction of the display device.

A high energy density, high power density capacitor having an energy density of at least about 0.5 J / cm3 is provided. The capacitor comprises a plurality of interleaved metal electrode layers separated by a polymer layer. The interleaved metal electrode layers terminate at opposite ends in a solder termination strip. The high energy density aspect of the capacitors of the invention is achieved by at least one of the following features: (a) the dielectric thickness between the interleaved metal electrode layers is a maximum of about 5 mu m; (b) the polymer is designed with a high dielectric constant kappa of at least about 3.5; (c) the metal electrode layers within the polymer layer are recessed along edges orthogonal to the solder termination strips to prevent arcing between the metal electrode layers at the edges; and (d) the resistivity of the metal electrode layers is within the range of about 10 to 500 ohms per square, or a corresponding thickness of about 200 to 30 ANGSTROM .

A flexible display of the present invention is an active matrix flexible display in which a TFT is provided for each pixel. In the flexible display, an adhesive layer, a protective layer, a gate electrode for the TFT, which is buried in the protective layer, a gate insulating layer for the TFT, source and drain electrodes for the TFT, a pixel electrode electrically connected to the drain electrode, an organic active layer for the TFT, an organic EL layer including a red (R) emitting layer, a green (G) emitting layer and a blue (B) emitting layer, which are formed on a plurality of the pixel electrodes, a metal electrode, and a sealing layer are formed on a plastic film.

The invention relates to an infrared detector with a micro-bridge structure, which belongs to the technical field of micro-electromechanics, and comprises a silicon substrate as a read-out circuit of the infrared detector; a metal reflecting layer deposited on the silicon substrate; a dielectric layer which is deposited in a groove of the metal reflecting layer and has the height being consistentwith that of the metal reflecting layer; a sacrifice layer and a first release protection layer used as protection of release of the sacrifice layer which are deposited on the dielectric layer and the metal reflecting layer and form through holes by lithography and etching; a copper or tungsten pier which is deposited in the through hole of the sacrifice layer; a metal electrode deposited on the copper or tungsten pier and the first release protection layer; and a sensitive material detecting layer which is deposited on the metal electrode and the first release protection layer. A Cu-column micro-bridge structure is manufactured by using the damascene process, and a flat micro-bridge plane is manufactured by introducing the chemical mechanical polishing process (CMP), thereby being conductive to the follow-up process and improving the performances.

An electrode structure is disclosed for enhancing the brightness and / or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric material formed intermediate the electrode and a light emitting semiconductor material. The electrode and the thick dielectric cooperate to reflect light from the semiconductor material back into the semiconductor so as to enhance the likelihood of the light ultimately being transmitted from the semiconductor material. Such LED can have enhanced utility and can be suitable for uses such as general illumination.

The invention provides for a fully electrically rechargeable metal-air battery systems and methods of achieving such systems. A rechargeable metal air battery cell may comprise a metal electrode an air electrode, and an aqueous electrolyte separating the metal electrode and the air electrode. In some embodiments, the metal electrode may directly contact the electrolyte and no separator or porous membrane need be provided between the air electrode and the electrolyte. Rechargeable metal air battery cells may be electrically connected to one another through a centrode connection between a metal electrode of a first battery cell and an air electrode of a second battery cell. Air tunnels may be provided between individual metal air battery cells. In some embodiments, an electrolyte flow management system may be provided.

The present invention generally relates to nanoscale heterostructures and, in some cases, to nanowire heterostructures exhibiting ballistic transport, and / or to metal-semiconductor junctions that that exhibit no or reduced Schottky barriers. One aspect of the invention provides a solid nanowire having a core and a shell, both of which are essentially undoped. For example, in one embodiment, the core may consist essentially of undoped germanium and the shell may consist essentially of undoped silicon. Carriers are injected into the nanowire, which can be ballistically transported through the nanowire. In other embodiments, however, the invention is not limited to solid nanowires, and other configurations, involving other nanoscale wires, are also contemplated within the scope of the present invention. Yet another aspect of the invention provides a junction between a metal and a nanoscale wire that exhibit no or reduced Schottky barriers. As a non-limiting example, a nanoscale wire having a core and a shell may be in physical contact with a metal electrode, such that the Schottky barrier to the core is reduced or eliminated. Still other aspects of the invention are directed to electronic devices exhibiting such properties, and techniques for methods of making or using such devices.

A display includes a polarizing member and a reflective display element behind an EL element. The EL element self-emits light to display information and doubles as a display-use light source for the reflective display element. In a sufficiently bright environment, ambient light enters a liquid crystal layer after passing through a frontal substrate of the reflective display element, and is reflected from a metal electrode to produce displays. In addition to the direct light from the EL element, light that enters the liquid crystal layer is simultaneously used. In a dark environment, the EL element emits light, and displayed contents are visible owing to the reflection from the metal electrode as well as directly exiting light. The structure makes it possible to provide a novel type of display that allows a user to select one of various display modes at his / her own discretion according to surrounding conditions and that also shows information in a clearly visible fashion, be it outdoors under clear skies or in a dark place, without giving up their thin, lightweight features.

The invention provides electroluminescent (EL) elements, such that a red EL light source, a green EL light source and a blue EL light source emit red color light, green color light, and blue color light, respectively, and are disposed at the rear of liquid crystal display elements. Each EL light source includes an organic EL element in which an organic thin film emits light. Each EL light source has a structure in which an organic luminescent layer is sandwiched between an indium tin oxide (ITO) electrode and a metal electrode which have striped patterns which are orthogonal to each other, and sections (luminescent sections) at which the striped patterns of the ITO electrode and the metal electrode intersect with each other emit light. The luminescent sections are arrayed two-dimensionally on a glass substrate and illuminate the entire display area of the liquid crystal display element.

A wide band gap semiconductor device is disclosed. A first trench in a gate electrode part and a second trench in a source electrode part (Schottky diode part) are disposed so that the first and second trenches are close to each other while and the second trench is deeper than the first trench. A metal electrode is formed in the second trench to form a Schottky junction on a surface of an n-type drift layer in the bottom of the second trench. Further, a p+-type region is provided in part of the built-in Schottky diode part being in contact with the surface of the n-type drift layer, preferably in the bottom of the second trench. The result is a wide band gap semiconductor device which is small in size and low in on-resistance and loss, and in which electric field concentration applied on a gate insulating film is relaxed to suppress lowering of withstand voltage to thereby increase avalanche breakdown tolerance at turning-off time.