872 results about "Metal electrodes" patented technology

The invention discloses a micro-fluidic liquid cooling heat dissipation module integrated with piezoelectric driving, a chip and application, and belongs to the technical field of chip liquid cooling heat dissipation. The micro-fluidic liquid cooling heat dissipation module comprises a micro-fluidic substrate and a piezoelectric film, the piezoelectric film covers the surface of one side of the microfluidic substrate; a groove channel is formed in the surface of one side, facing the piezoelectric film, of the micro-fluidic substrate; a loop cavity defined by the piezoelectric film and the groove channel forms a micro-channel; a metal electrode layer, a heat source area and a heat exchange area are respectively arranged at different positions, corresponding to the micro-channel, on the surface of one side, deviating from the micro-fluidic substrate, of the piezoelectric film. The micro-fluidic liquid cooling heat dissipation module can actively drive the cooling liquid to flow to a heat source area, and compared with a traditional micro-channel heat dissipation mode, the micro-fluidic liquid cooling heat dissipation module has very high flexibility in fluid driving, does not need an external driving pump, can greatly reduce the size of a packaged chip, and is beneficial to development of chip integration and microminiaturization.

The invention discloses a memristor based on a covalent organic framework and a preparation method and application thereof.The memristor comprises a substrate, a semiconductor electrode, a covalent organic framework film and a metal electrode which are sequentially arranged in a stacked mode, and the covalent organic framework film is composed of 1, 3, 4, 5, 6, 7, 8, 8, 9, 10, 11, 12, 13, 14, 16, 17, 17, 17, 17, 17, 17, 17, 17, the catalyst is prepared by condensing 1, 3, 5-tri (4-aminophenyl) benzene and terephthalaldehyde or terephthalaldehyde with an alkyl or alkoxy side chain. The covalent organic framework film has a highly ordered structure and an adjustable porous structure, the preparation process is simple, the film thickness is uniform, the flatness and the crystallinity are high, and the dielectric property is adjusted, so that the switching voltage and the cycling stability of the memristor are adjusted, and the memristor has stable and repeatable switching performance; the COFs-based memristor has high on / off ratio, low device variability and high flexibility, can be used for preparing the COFs-based memristor, can provide technical support for neuromorphic devices with high efficiency, adjustability, structure adjustability and rich functions, and can be applied to the field of intelligent sensing and autonomous system control such as an auxiliary driving system.

The invention discloses a multi-modal sensory artificial synaptic device based on a framework material and a preparation method and application thereof. The artificial synaptic device comprises a substrate and a channel, wherein the channel is arranged on the surface of the substrate; the channel is an amorphous organic metal framework film which responds to light and gas stimulation; the metal electrode is arranged on the surface of the channel; the metal electrode comprises a source electrode and a drain electrode. Compared with the prior art, the framework material with excellent photoelectric response performance is adopted, and a novel artificial synapse device with multi-mode sensing ability is constructed by fully utilizing the regular pore structure, large specific surface area and good photoresponse characteristic of the MOF material. The two electrodes of the device are connected into electrical test equipment, the conductivity of the amorphous MOF thin film can be changed under the stimulation of optical pulse signals, and finally simulation based on photoresponse synaptic plasticity is achieved. The device is placed in different gas environments, and the conductivity of the MOF film can be changed by capturing and releasing target gas molecules through the porous characteristic of the amorphous MOF material, so that simulation based on gas response synaptic plasticity is realized.

The invention relates to a heterogeneous insulation interface parameter testing method and device based on broad-spectrum photoelectric emission, and the method comprises the steps: applying metal electrodes with different work functions to to-be-tested samples of two single-layer materials forming heterogeneous insulation, and obtaining a single-layer material photoelectric emission current spectrum; analyzing the photoelectric emission current spectrums of the single-layer materials to obtain parameters of the two single-layer materials forming heterogeneous insulation; applying metal electrodes with different work functions to a heterogeneous insulation composite sample formed by tightly attaching two single-layer materials forming heterogeneous insulation to obtain a total photoelectric emission current spectrum of the heterogeneous insulation composite sample; separating according to the total photoelectric emission current spectrum of the heterogeneous insulation composite sample to obtain an intermediate interface photoelectric emission current spectrum; and analyzing the photoelectric emission current spectrum of the intermediate interface, and calculating to obtain a real contact potential barrier between the two single-layer materials forming the heterogeneous insulation. Compared with the prior art, high-precision measurement of heterogeneous insulation interface parameters is realized.

The invention provides a phosphorus emitter passivation structure and a preparation method thereof, the passivation structure comprises a phosphorus emitter, the phosphorus emitter comprises silicon, phosphorus, hydrogen, carbon and / or nitrogen, the surface of the phosphorus emitter is provided with a nano silicon oxide layer, the phosphorus emitter comprises an electric injection region and a doped region, the electric injection region is provided with a conductive layer at a corresponding position, and the doped region is provided with a conductive layer at a corresponding position. The conductive layer is used for being connected with a metal electrode, a passivation anti-reflection layer is arranged at the corresponding position of the doped region, and the carbon and / or nitrogen concentration of the electric injection region is higher than that of the electric injection region. Partitioned passivation is performed on the surface of the phosphorus emitter, and carbon and / or nitrogen atoms are introduced into the doped region, so that the interface passivation effect is improved; the electric injection region is not subjected to carbon and nitrogen doping and is not provided with a passive film, so that the influence of passivation on the contact resistivity is reduced; a conductive channel is introduced into the electric injection region for electric injection, so that the defect state of the phosphorus emitter can be further eliminated, and the recombination current is reduced.

The invention relates to the technical field of gel electrolyte, in particular to a method for constructing gel electrolyte on the surface of an electrode through in-situ self-initiation and application of the method. The method comprises the following steps: (1) dissolving a zinc salt in water to obtain a liquid electrolyte; (2) uniformly mixing a gel monomer, an initiator, a cross-linking agent and a liquid electrolyte to obtain a precursor solution; and (3) pouring the precursor solution on the surface of the negative electrode of the battery, covering the precursor solution with the positive electrode of the battery, and standing to realize in-situ construction of the gel electrolyte on the surface of the electrode. The solution is gelatinized through reducibility self-initiation of the metal electrode and is constructed on the surface of the electrode in situ, the electrochemical performance of the aqueous zinc metal is remarkably improved, meanwhile, the process steps are reduced, and the cost is reduced.

The invention provides a three-wafer bonding MEMS device and a preparation method thereof, the three-wafer bonding MEMS device comprises a first wafer, a second wafer, a third wafer, an insulating layer and a metal electrode, the first wafer comprises a plurality of first grooves, the bottom of each first groove is communicated with at least one silicon groove, and each silicon groove is filled with an insulating material; protruding silicon-silicon bonding platforms are arranged between the first grooves and inside the first grooves. The second wafer is connected with the first wafer through a silicon-silicon bonding platform, and a plurality of strip holes are formed in the second wafer; the third wafer comprises a plurality of second grooves; a limiting bulge can be arranged in the second groove; a raised eutectic bonding platform is arranged between the interior of the second groove and the second groove, and the third wafer is bonded with the second wafer; the insulating layer covers the first wafer; the plurality of metal electrodes are disposed on the insulating layer. According to the invention, the problem that the electrical parameters of the silicon-silicon bonding process cannot be tested and represented in the production and manufacturing of the MEMS device is solved.

The invention relates to the technical field of perovskite solar cell functional thin film packaging, in particular to a solar cell with a perovskite active layer packaged by a double-sided thin film and a preparation method of the solar cell. Al2O3 is used for depositing a layer of Al2O3 thin film between the perovskite active layer and a P-type carrier transport layer (hole transport layer HTL); a layer of SiO2 thin film is deposited between a perovskite active layer and an N-type carrier transport layer (electron transport layer ETL), and a double-sided thin film wrapping layer is formed by an Al2O3 thin film and the SiO2 thin film; through the design and preparation method of the Al2O3 / SiO2 double-sided thin film packaging perovskite active layer, the core stability problem of the perovskite active layer is effectively solved. The double-sided packaging structure can efficiently block water and oxygen permeation, and the perovskite is prevented from being decomposed due to water and oxygen erosion; meanwhile, diffusion of metal electrode ions to a perovskite layer and migration of halogen ions in perovskite to the electrode can be inhibited, bidirectional damage is reduced, and the sensitivity of perovskite to water and oxygen and performance degradation caused by interface ion migration are relieved fundamentally.

The invention provides a photoelectric detector and a preparation method thereof, which are applied to the technical field of semiconductors, and the photoelectric detector comprises a gallium oxide light absorption layer; the two-dimensional Van der Waals material layer is arranged on the gallium oxide light absorption layer and is combined with the gallium oxide light absorption layer through Van der Waals force to form a vertical heterojunction; the metal electrode is formed on the surfaces of the gallium oxide light absorption layer and the two-dimensional Van der Waals material layer; wherein the work function of the two-dimensional Van der Waals material layer is matched with the work function of the gallium oxide light absorption layer, so that staggered energy band arrangement is formed at the interface of the vertical heterojunction. According to the invention, interface defects caused by lattice mismatch can be avoided, and non-radiative recombination of photon-generated carriers can be reduced, so that the response speed and photoelectric conversion efficiency of the photoelectric detector can be greatly improved.

The invention relates to the technical field of integrated photoelectron and electro-optical modulation, in particular to a thin-film lithium niobate electro-optical modulator structure and a preparation method of the thin-film lithium niobate electro-optical modulator structure. The buried layer is located on the upper surface of the substrate; the partially-etched thin film lithium niobate layer comprises a partially-etched thin film lithium niobate flat plate layer and a thin film lithium niobate ridge waveguide, the partially-etched thin film lithium niobate flat plate layer is located on the upper surface of the buried layer and exposes a part of the buried layer, and the thin film lithium niobate ridge waveguide is located on the partially-etched thin film lithium niobate flat plate layer; the partially-etched buffer layer is located on the partially-etched thin film lithium niobate layer, and the side wall of the partially-etched thin film lithium niobate flat plate layer is exposed; and the metal electrode is in electric contact with the side wall of the partially etched thin film lithium niobate flat plate layer. Therefore, the problems of low-frequency modulation waveform distortion, direct-current bias point drift and the like caused by electro-optical relaxation and electric field shielding of a related thin-film lithium niobate electro-optical modulator are solved.

The invention is suitable for the technical field of semiconductor LED display, and provides a high-color-gamut LED chip structure and a preparation method thereof. The high-color-gamut LED chip structure comprises a substrate material, a buffer layer, a first semiconductor layer, a green wave quantum well layer, an electron hole adjusting layer, a blue wave quantum well layer, a second semiconductor layer, a current blocking layer and a current expansion layer which are sequentially arranged from bottom to top, and further comprises a first metal electrode layer, a second metal electrode layer and a transparent insulating layer. The electron hole adjusting layer is used for controlling the distribution of electrons and holes in the green wave quantum well layer and the blue wave quantum well layer so as to adjust the wavelength and the spectral intensity of emergent light of the green wave quantum well layer; through introduction of the electron hole adjusting layer, the wavelength of a long wave and the corresponding spectral intensity can be effectively controlled, two wavelengths can be emitted from a single chip, and through introduction of double waves, the color gamut of a display screen can be improved.

The invention provides a manufacturing method of a BC back contact solar cell, and the method comprises the following steps: S3, depositing a passivation contact structure on the back surface of a silicon wafer, the passivation contact structure at least comprising a tunneling oxide layer and an intrinsic silicon layer; s4, on the intrinsic silicon layer, slurry containing a P-type doping source and slurry containing an N-type doping source are applied to the predetermined P-type contact and N-type contact areas in a printing mode respectively; s5, scanning the back surface of the silicon wafer by using laser, activating and driving the P-type doping source and the N-type doping source to diffuse downwards by using laser energy, and selectively forming a P + + heavily doped region and an N + + heavily doped region at one time; s6, performing high-temperature annealing treatment on the silicon wafer; s7, carrying out acid pickling cleaning on the silicon wafer; s8, performing texturing treatment on the front surface of the silicon wafer; s9, depositing a passivation layer and an anti-reflection layer on the front surface and the back surface of the silicon wafer; and S10, forming metal electrodes on the P + + and N + + heavily doped regions on the back surface of the silicon wafer. The technological process is simplified, the production cost is low, and the conversion efficiency is high.

The invention relates to the technical field of solar cells, in particular to an interface regulation and control method for inhibiting electrode failure of a perovskite device, which comprises the following steps: (1) cleaning a transparent conductive layer with P1 laser scribing to obtain a clean transparent conductive substrate; sequentially preparing a first carrier transport layer, a perovskite layer and a second carrier transport layer on the transparent conductive substrate from bottom to top, and then performing P2 laser scribing; (2) preparing an interface buffer layer on the second carrier transport layer; and (3) depositing a metal electrode on the interface buffer layer and then carrying out P3 laser scribing. According to the regulation and control method, through preparation of a core interface buffer layer and full-flow process regulation and control, an optimized nucleation interface is provided for metal electrode densification and film formation, and the electrode deposition quality is improved; meanwhile, good energy level matching of the carrier transport layer and the metal electrode is achieved, interface ion migration and diffusion are restrained, and the problems of thin film splashing and edge curling in the laser scribing process are solved.

The application discloses a kind of detection p-type group III nitride activation effect characterization method, the present application is based on kelvin probe force microscope, by preparing metal electrode layer on the surface of p-type group III nitride to form ohmic contact, and metal electrode layer and the sample stage of kelvin probe force microscope form conductive connection, to weaken the influence of other epitaxial layer except p-type group III nitride on test result, according to the difference of p-type group III nitride and metal electrode layer surface potential or the conversion of surface potential is tested to the combination hall test system, realizes the relatively accurate measurement of p-type group III nitride activation effect.The present application method is simple and fast and effective, can accurately determine the change of p-type group III nitride surface potential before and after activation, and will play an important role for the research p-type group III nitride activation method.

The application discloses a light-controlled tunneling response detector, a preparation method and application thereof, and comprises a Si / SiO2 substrate, a metal electrode, a WS2 layer, a graphene interlayer and a SnSe2 layer, the tunneling photoelectric detector is integrated with the metal electrode on the Si / SiO2 substrate, and a vertical heterojunction conductive channel composed of WS2 / graphene / SnSe2 is constructed in the area between the metal electrodes; wherein the graphene serves as an intermediate interlayer, is combined with the upper SnSe2 and the lower WS2 through van der Waals force, and forms a vertical stacking structure which is staggered and overlapped with each other. The application realizes dynamic switching of a type II to type III heterojunction, forms an interband quantum tunneling channel, and improves a tunneling probability.

This utility model provides a transformer partial discharge testing device, mainly relating to the field of transformer technology. The device includes a housing and metal electrodes. The metal electrodes are slidably disposed on the top of the housing. A rectangular cylinder is fixedly disposed on the top of the housing. A support frame is slidably disposed inside the rectangular cylinder. A limiting block is hinged to the outside of the rectangular cylinder, and the limiting block abuts against the side of the support frame. An L-shaped fixing plate is fixedly disposed on the outside of the rectangular cylinder, and a DC solenoid valve is fixedly disposed on the L-shaped fixing plate. The end of the DC solenoid valve abuts against the limiting block. The advantages of this utility model are: after the test is completed or the monitoring system detects an abnormality, the metal electrodes can be quickly and safely separated from the transformer, effectively avoiding the risk of electric shock due to residual charge and greatly ensuring the safety of operators.

A power semiconductor device is provided. The power semiconductor device mainly comprises a first conductive-type highly-doped substrate and a second conductive-type contact region formed thereon. The contact region has a dual-layer doping structure comprising a highly-doped region and a lightly-doped region. Accordingly, the active area of the power device has a five-layer structure of a second conductive-type highly-doped region, a second conductive-type lightly-doped region, an intrinsic semiconductor epitaxial layer, a first conductive-type lightly-doped layer, and a first conductive-type highly-doped substrate, for improving the breakdown voltage of the power device. In addition, metal silicide layers are introduced on the front and back sides of the device and form ohmic contacts with the metal layers thereof to shorten the reverse recovery time (trr) of the device. The metal electrode on the front of the device has a plurality of ring-shaped designs, including at least one second conductive-type metal ring and one first conductive-type metal ring.

Disclosed in the present application is a preparation method for a solar cell. The method comprises: providing a silicon substrate; forming a first tunnel oxide layer on a first surface of the silicon substrate; forming a first conductivity-type semiconductor layer on the first tunnel oxide layer; forming a first transparent conductive layer on the first conductivity-type semiconductor layer; forming a first metal electrode layer on the first transparent conductive layer, and forming an ohmic contact between a first metal electrode in the first metal electrode layer and the first transparent conductive layer; forming a second tunnel oxide layer on a second surface of the silicon substrate; forming a second conductivity-type semiconductor layer on the second tunnel oxide layer; forming a second transparent conductive layer on the second conductivity-type semiconductor layer; and forming a second metal electrode layer on the second transparent conductive layer, and forming an ohmic contact between a second metal electrode in the second metal electrode layer and the second transparent conductive layer. Further disclosed in the present application is a solar cell.

The invention provides a high-quality-factor metal arched quartz resonator and a preparation method thereof, and relates to the technical field of sensors. The structure of the metal arched quartz resonator sequentially comprises a lower metal electrode layer, a lower adhesion layer, a quartz substrate, an upper adhesion layer, an upper metal electrode layer and a metal arched structure from bottom to top. And each layer coincides with the geometric center normal of the metal arch structure. The metal arched structures are consistent in height and comprise a central symmetrical metal structure and a plurality of annular metal structures surrounding the periphery of the central symmetrical metal structure, and the two annular metal structures are concentric. The ring widths of the annular metal structures are integrally decreased from the center to the periphery, and the distances are integrally increased from the center to the periphery. According to the design, the metal arched quartz resonator has the advantages of high quality factor, high yield and low processing cost.

The invention provides a thermal shock resistant perovskite solar cell and a preparation method thereof. The thermal shock resistant perovskite solar cell sequentially comprises a conductive substrate, an electron transport layer, a light absorption layer, a hole transport layer and a metal electrode layer from bottom to top, and an FPI layer is introduced between a perovskite layer and the electron transport layer. The FPI molecular passivation layer introduced by the method is anchored on a TiO2 and perovskite interface through a unique'molecular bridge 'structure, so that the modulus difference between a perovskite layer and an electron transport layer is greatly reduced, the release of interface stress is remarkably promoted, and meanwhile, the interface stress energy is reduced; 2, the occurrence of a perovskite thin film phase separation phenomenon and the generation of degradation products are inhibited; thirdly, the vertical growth of perovskite thin film crystal grains and the carrier transport efficiency are promoted; higher photoelectric conversion efficiency and good long-term stability are realized. The perovskite solar cell prepared by the method has the characteristics of simple process, excellent stability, good repeatability and the like, is suitable for large-scale popularization and application, and has a good application prospect.

The invention discloses a manufacturing method of a three-dimensional system chip based on an aluminum nitride bonding structure and the three-dimensional system chip, and belongs to the field of advanced packaging of semiconductors. The manufacturing method comprises the following steps: providing a mother wafer, wherein the surface of the mother wafer is provided with a mother core metal electrode array; providing at least one sub-core particle, wherein the surface of the sub-core particle is provided with a sub-core metal electrode array; forming an aluminum nitride bonding layer in a non-electrode interconnection area on the surface of the mother wafer and / or the surfaces of the sub core particles; and stacking and aligning the sub-core particles and the mother wafer, and bonding through the aluminum nitride bonding layer, so that the mother core metal electrode array and the sub-core metal electrode array are vertically interconnected. According to the invention, aluminum nitride is used as a bonding and filling medium, and has the characteristics of high insulativity and high thermal conductivity, so that high-density and high-reliability electrical interconnection is realized, an efficient heat dissipation channel is provided for the high-power-consumption core particles, and the technical problem that heat dissipation and insulation in traditional three-dimensional integration are difficult to collaboratively optimize is solved.

The invention discloses a TBC crystalline silicon cell doped on the back step by step and region and a preparation method of the TBC crystalline silicon cell. The preparation method comprises the steps that an N-type monocrystalline silicon substrate is provided, the substrate comprises a front face and a back face, annealing treatment is carried out on the back face in a partitioned and step-by-step mode, and doping activation of independent areas is carried out; preparing a textured structure with pyramid morphology on the front surface of the N-type monocrystalline silicon substrate to enhance the light trapping effect; and performing a metal slurry screen printing process on the first region and the second region, performing high-temperature sintering, forming a metal electrode in contact with the first doping layer in the first region, forming a metal electrode in contact with the second doping layer in the second region, and preparing the TBC crystalline silicon battery. According to the invention, the technical problems of incompatibility of boron and phosphorus doped region doping processes, increase of the complexity of a process route, influence on the cell performance and the like in the prior art can be solved, the open-circuit voltage and the fill factor of the cell can be effectively improved, and the photoelectric conversion efficiency of the TBC crystalline silicon cell is improved.

The invention relates to the technical field of semiconductor devices, in particular to a novel electric pump AlGaN-based deep ultraviolet laser diode and a preparation method thereof. The structure comprises a stacking structure, a passivation layer, an n-type metal electrode layer and a p-type metal electrode layer, a substrate, a template layer, a bottom DBR layer, a step-shaped n-type AlGaN layer, a micro-cavity LED active region layer, a p-type AlGaN layer, a step-shaped p-type AlGaN contact layer, a top DBR layer, a lower waveguide layer, an LD multi-quantum well layer and an upper waveguide layer are stacked on the stacking structure in sequence. The ridge surface width of the p-type AlGaN contact layer is greater than or equal to 100 microns; the passivation layer covers the surface and the side wall of the stacked structure, and electrode layer growth channels are formed in the step surfaces of the n-type AlGaN layer and the p-type AlGaN contact layer respectively; and the n-type metal electrode layer and the p-type metal electrode layer respectively penetrate through the corresponding electrode layer growth channels. The advantages are that the wide ridge design improves the light output power, the performance is excellent, and the etching damage is reduced.

The present application belongs to the technical field of nanoelectronic devices, and provides an integrated gas sensing-computing synaptic device and a preparation method therefor. The device comprises: a first functional layer, a barrier layer, a second functional layer, a first metal electrode, and a second metal electrode; the first functional layer is heavily doped silicon; the second functional layer uses CuOx material, such that defect energy levels are formed by interstitial oxygen and copper vacancies; the barrier layer increases contact area between the second functional layer and a test gas; a direct current voltage scan is applied between the first metal electrode and the second metal electrode, to simulate resistive switching behavior of a memristor; the second functional layer reacts with the test gas, to implement a gas sensing function; a constant voltage signal is applied between the first metal electrode and the second metal electrode, and in a gas pulse environment, a current response state exhibits a synaptic response. The present application can implement in-situ sensing and processing of gas information, improving information processing efficiency, and the gas information inference method of the integrated gas sensing-computing device is simpler.

The invention provides a COF material, a perovskite battery, a preparation method of the perovskite battery and an electric device. X ions in the COF material are positive ions containing imidazole. The COF material for the perovskite solar cell, provided by the invention, has very strong adsorption capacity on I2; besides, the COF nanopore contains a plurality of N-containing and O-containing electron-rich groups and also contains pi electron conjugated structures such as a benzene ring and imidazole, and imidazole ions also serve as hydrogen bond donors, so that dynamic active sites in the COF nanopore are increased, and adsorption of I2 is further promoted through the synergistic effect of hydrogen bonds and electron-rich sites; therefore, the COF material can weaken the chemical reaction between the metal electrode and the perovskite, thereby inhibiting the corrosion of the metal electrode in the perovskite solar cell. The COF material also contains a plurality of passivation groups such as an oxygen-containing functional group and a nitrogen-containing functional group, and the passivation groups can passivate Pb < 2 + > defects in the perovskite layer.

The present application relates to a kind of transfer method of metal electrode, the method includes: depositing metal electrode on polydimethylsiloxane film, metal electrode on polydimethylsiloxane film is adhered and is attached to target substrate using flexible adhesive layer, remove flexible adhesive layer, metal electrode transfer can be completed.Just because the surface energy of polydimethylsiloxane film is low, and adhesion is weak, therefore metal electrode can be completely adhered by flexible adhesive layer, and will not remain on polydimethylsiloxane film, ensure the integrity of metal electrode transfer, improve yield, and because polydimethylsiloxane material is low in price, therefore reduce transfer cost, so as to realize while giving consideration to high yield and low transfer cost.

The application provides a perovskite solar cell based on synergistic effect of an additive and a passivation agent and a preparation method thereof, the perovskite solar cell based on synergistic effect of the additive and the passivation agent comprising: conductive electrodes FTO, a first hole transport layer, a second hole transport layer, a perovskite active layer, a passivation layer, an electron transport layer, an interface modification layer and a metal electrode layer arranged in sequence; wherein the perovskite active layer is added with an additive fluoropyridine; the passivation layer is added with a passivation agent diammonium hydriodate; the additive and the passivation agent can simultaneously interact with constituent components in the perovskite. Through synergistic effect of the fluoropyridine additive and the diammonium hydriodate passivation agent, formation of lead iodide and a delta phase in the perovskite thin film is inhibited, crystallinity of the perovskite thin film is improved, and defect density is reduced, and finally a perovskite solar cell with high performance and high stability is obtained.

The invention belongs to the technical field of optical calculation, and particularly relates to an intensity-phase mixed silicon-based photon modulator. According to the hybrid silicon-based photon modulator, a PIN micro heater formed by ion implantation is integrated on two arms of a Mach-Zehnder interferometer or a micro-ring resonator, and a phase change material and a protective layer are deposited in a window above the micro heater; electric pulses are applied to metal electrodes at the two ends of the micro heater to drive local reversible crystalline and amorphous transformation of the phase change material, and phase modulation of passing optical signals is achieved; meanwhile, constant voltage signals are applied to the two ends of the PIN micro heater, and intensity modulation is generated on passing optical signals through the carrier absorption effect. The two modulation modes are mutually independent and do not interfere with each other, and two groups of independently variable weight values can be stored in the device. The hybrid silicon-based photon modulator can be used in a large photon neural network, high-speed and high-parallelism convolution operation is carried out, and the overall end-to-end insertion loss of a chip is reduced.

The application relates to a solar cell, a preparation method of the solar cell and a photovoltaic module, and belongs to the photovoltaic technical field.The solar cell comprises a substrate and a first doped conductive layer, and the substrate has a first surface with a pyramid structure along the thickness direction; the pyramid structure comprises a top part, a middle part and a bottom part arranged in sequence along the thickness direction of the substrate; and the first doped conductive layer is formed in the interior of the first surface; the average doping concentration of the doped elements in the first doped conductive layer is n1 in the top part, the average doping concentration of the doped elements in the first doped conductive layer is n2 in the middle part, the average doping concentration of the doped elements in the first doped conductive layer is n3 in the bottom part, 1.05 < n1 / n2 <= 2, and 1.05 < n2 / n3 <= 2; the function areas of the first doped conductive layer in the pyramid structure are more distinct, the better passivation effect is ensured, and better ohmic contact with the metal electrode can be formed.

The invention provides a silicon heterojunction cell, a preparation method and a photovoltaic module, and the method comprises the following steps: heating a pretreated substrate under a vacuum condition, and obtaining a heated substrate; sequentially growing an intrinsic amorphous silicon passivation layer, n-type doped hydrogenated microcrystalline silica, a transparent oxide conductive film and a metal electrode on the front surface of the heated substrate by adopting a chemical deposition method; sequentially growing an intrinsic amorphous silicon passivation layer, three p-type selective contact layers, a transparent oxide conductive film and a metal electrode on the back surface of the heated substrate by adopting a chemical deposition method; the three p-type selective contact layers comprise a p-type hydrogenated microcrystalline silicon layer, a CO2 lightly doped p-type hydrogenated microcrystalline silicon oxygen layer and a CO2 heavily doped p-type hydrogenated microcrystalline silicon oxygen layer; the three p-type selective contact layers constructed by the invention can provide excellent conductivity, transmittance and contact performance, and the filling factor of the cell is improved, so that the photoelectric conversion efficiency of the cell is improved.