1491 results about "Metal electrodes" patented technology

The invention provides a synthetic antiferromagnetic memory cell driven by spin orbit moment without magnetic field assistance, and belongs to the technical field of magnetic memory, the synthetic antiferromagnetic memory cell comprises a magnetic tunnel junction of a multilayer film structure, the magnetic tunnel junction comprises a heavy metal layer and a synthetic antiferromagnetic free layer located on the heavy metal layer; the tunneling insulating layer is located on the synthetic antiferromagnetic free layer, the reference layer is located on the tunneling insulating layer, and the metal electrode layer is located on the reference layer; wherein the synthetic antiferromagnetic free layer comprises an inclined vertical magnetic layer, a non-magnetic metal layer and a coupling magnetic layer which are stacked in sequence, and the inclined vertical magnetic layer and the coupling magnetic layer are subjected to antiferromagnetic coupling through the middle non-magnetic metal layer; the inclined perpendicular magnetic layer has inclined perpendicular anisotropy. According to the invention, deterministic magnetization flipping driven by spin orbit moment and resistance state control of the magnetic tunnel junction memory cell without the assistance of an external magnetic field are realized.

The invention discloses a micro-fluidic liquid cooling heat dissipation module integrated with piezoelectric driving, a chip and application, and belongs to the technical field of chip liquid cooling heat dissipation. The micro-fluidic liquid cooling heat dissipation module comprises a micro-fluidic substrate and a piezoelectric film, the piezoelectric film covers the surface of one side of the microfluidic substrate; a groove channel is formed in the surface of one side, facing the piezoelectric film, of the micro-fluidic substrate; a loop cavity defined by the piezoelectric film and the groove channel forms a micro-channel; a metal electrode layer, a heat source area and a heat exchange area are respectively arranged at different positions, corresponding to the micro-channel, on the surface of one side, deviating from the micro-fluidic substrate, of the piezoelectric film. The micro-fluidic liquid cooling heat dissipation module can actively drive the cooling liquid to flow to a heat source area, and compared with a traditional micro-channel heat dissipation mode, the micro-fluidic liquid cooling heat dissipation module has very high flexibility in fluid driving, does not need an external driving pump, can greatly reduce the size of a packaged chip, and is beneficial to development of chip integration and microminiaturization.

The invention provides a compound containing a silicon group and an organic electroluminescent device thereof, and particularly relates to the technical field of organic electroluminescent materials. When the compound containing the silicon group is used as a covering layer material, the glass transition temperature is high, the thermal stability and the chemical stability are good, the light transmittance of a device can be improved, aging of the device is delayed, and therefore the service life of the device is effectively prolonged; and the compound has weak metal adsorption capacity, and can effectively inhibit the deposition of a metal electrode material on the surface of a nucleation inhibition layer when being applied to the nucleation inhibition layer, thereby improving the performance of the device. In conclusion, the silicon group-containing compound provided by the invention can be widely applied to the fields of panel display and the like, and has a good development prospect.

The invention belongs to the technical field of photoelectric detection, and discloses a heterojunction dual-band photoelectric detector based on a two-dimensional material, which comprises a substrate layer, an insulating layer, a molybdenum disulfide layer, graphene, black phosphorus and a metal electrode, the insulating layer is formed above the substrate layer, the molybdenum disulfide layer is located above the insulating layer, the molybdenum disulfide layer is formed above the insulating layer, no less than two layers of graphene are arranged above the molybdenum disulfide layer, and the top layer is multi-layer black phosphorus; the molybdenum disulfide layer, the graphene and the black phosphorus are in contact through Van der Waals force, a source electrode and a drain electrode of a formed heterostructure are connected with the metal electrode, and the molybdenum disulfide layer and the black phosphorus are isolated through the graphene and do not make contact with each other. In the invention, the intrinsic dark current in direct proportion to the effective transmission volume of the device is greatly reduced, and meanwhile, the current carriers are limited in a two-dimensional plane and are very easy to regulate and control by a local electric field, so that the dark current of the device can be further reduced, and the problem that the detector prepared from most traditional materials needs refrigeration at present can be solved.

The invention relates to a preparation method of a local ITO interconnected perovskite-TOPCon laminated cell, which comprises the following steps: taking an n-type monocrystalline silicon wafer as a substrate, cleaning and texturing, diffusing boron on the back to form a P + emitter, oxidizing at high temperature, and treating the surface through acid etching and alkali polishing; sequentially preparing a tunneling oxide layer and a phosphorus-doped polycrystalline silicon layer on the front surface, annealing and crystallizing, depositing an aluminum oxide film and a multi-layer silicon nitride film on the back surface after cleaning, and depositing a single-layer silicon nitride film on the front surface; preparing a back metal electrode, etching according to a designed pattern to remove a local silicon nitride film on the front surface, sequentially preparing an ITO interconnection layer, a hole transport layer, a perovskite layer, a passivation layer, an electron transport layer and an ITO transparent conductive layer on the front surface, and finally preparing a front metal electrode and solidifying to form a contact electrode. According to the invention, the problems of back corrosion risk, effective area loss and tedious process in the existing method are solved, full-size manufacturing is realized, the cell performance is improved, and industrialization is easier.

The invention discloses a perovskite solar cell module based on insulation layer protection and a packaging process optimization method thereof, through adding an insulation protection layer on the surface of a metal electrode layer and combining a specific deposition process and a packaging process, the risk of short circuit is effectively avoided, and the stability of the cell module is improved at the same time. The perovskite solar cell module sequentially comprises a glass substrate, a transparent conductive oxide layer, a first functional layer, a perovskite layer, a second functional layer, a metal electrode layer, an insulating layer, an adhesive film and a packaging cover plate from bottom to top, and efficient packaging is realized by optimizing laser scribing and insulating layer deposition processes. According to the invention, the long-term stability and the electrical performance of the perovskite assembly are obviously improved, and the perovskite assembly has a wide application prospect.

The invention discloses a memristor based on a covalent organic framework and a preparation method and application thereof.The memristor comprises a substrate, a semiconductor electrode, a covalent organic framework film and a metal electrode which are sequentially arranged in a stacked mode, and the covalent organic framework film is composed of 1, 3, 4, 5, 6, 7, 8, 8, 9, 10, 11, 12, 13, 14, 16, 17, 17, 17, 17, 17, 17, 17, 17, the catalyst is prepared by condensing 1, 3, 5-tri (4-aminophenyl) benzene and terephthalaldehyde or terephthalaldehyde with an alkyl or alkoxy side chain. The covalent organic framework film has a highly ordered structure and an adjustable porous structure, the preparation process is simple, the film thickness is uniform, the flatness and the crystallinity are high, and the dielectric property is adjusted, so that the switching voltage and the cycling stability of the memristor are adjusted, and the memristor has stable and repeatable switching performance; the COFs-based memristor has high on / off ratio, low device variability and high flexibility, can be used for preparing the COFs-based memristor, can provide technical support for neuromorphic devices with high efficiency, adjustability, structure adjustability and rich functions, and can be applied to the field of intelligent sensing and autonomous system control such as an auxiliary driving system.

The invention discloses a multi-modal sensory artificial synaptic device based on a framework material and a preparation method and application thereof. The artificial synaptic device comprises a substrate and a channel, wherein the channel is arranged on the surface of the substrate; the channel is an amorphous organic metal framework film which responds to light and gas stimulation; the metal electrode is arranged on the surface of the channel; the metal electrode comprises a source electrode and a drain electrode. Compared with the prior art, the framework material with excellent photoelectric response performance is adopted, and a novel artificial synapse device with multi-mode sensing ability is constructed by fully utilizing the regular pore structure, large specific surface area and good photoresponse characteristic of the MOF material. The two electrodes of the device are connected into electrical test equipment, the conductivity of the amorphous MOF thin film can be changed under the stimulation of optical pulse signals, and finally simulation based on photoresponse synaptic plasticity is achieved. The device is placed in different gas environments, and the conductivity of the MOF film can be changed by capturing and releasing target gas molecules through the porous characteristic of the amorphous MOF material, so that simulation based on gas response synaptic plasticity is realized.

The invention provides a gas sensor and a method for preparing the gas sensor through laser direct writing. The method comprises the following steps: enabling a metal electrode to be in contact with laser direct writing ink, wherein the laser direct writing ink comprises a nickel source, a porous structure guiding agent and a solvent; laser irradiates a specified contact area of the metal electrode and the laser direct-writing ink, so that the metal electrode absorbs the laser to generate heat so as to form a hydrothermal reaction area in the specified contact area, and the laser direct-writing ink in the hydrothermal reaction area is subjected to a hydrothermal reaction, so that porous nickel hydroxide grows on the metal electrode, and a precursor structure is obtained; and carrying out annealing treatment on the precursor structure so as to convert the porous nickel hydroxide into porous nickel oxide, thereby obtaining the gas sensor. The gas sensor provided by the invention has the porous nickel oxide which has a relatively large specific surface area, so that the effective contact area between the gas sensor and target gas can be increased, and the gas responsivity of the gas sensor is improved.

The invention relates to a heterogeneous insulation interface parameter testing method and device based on broad-spectrum photoelectric emission, and the method comprises the steps: applying metal electrodes with different work functions to to-be-tested samples of two single-layer materials forming heterogeneous insulation, and obtaining a single-layer material photoelectric emission current spectrum; analyzing the photoelectric emission current spectrums of the single-layer materials to obtain parameters of the two single-layer materials forming heterogeneous insulation; applying metal electrodes with different work functions to a heterogeneous insulation composite sample formed by tightly attaching two single-layer materials forming heterogeneous insulation to obtain a total photoelectric emission current spectrum of the heterogeneous insulation composite sample; separating according to the total photoelectric emission current spectrum of the heterogeneous insulation composite sample to obtain an intermediate interface photoelectric emission current spectrum; and analyzing the photoelectric emission current spectrum of the intermediate interface, and calculating to obtain a real contact potential barrier between the two single-layer materials forming the heterogeneous insulation. Compared with the prior art, high-precision measurement of heterogeneous insulation interface parameters is realized.

The invention provides a phosphorus emitter passivation structure and a preparation method thereof, the passivation structure comprises a phosphorus emitter, the phosphorus emitter comprises silicon, phosphorus, hydrogen, carbon and / or nitrogen, the surface of the phosphorus emitter is provided with a nano silicon oxide layer, the phosphorus emitter comprises an electric injection region and a doped region, the electric injection region is provided with a conductive layer at a corresponding position, and the doped region is provided with a conductive layer at a corresponding position. The conductive layer is used for being connected with a metal electrode, a passivation anti-reflection layer is arranged at the corresponding position of the doped region, and the carbon and / or nitrogen concentration of the electric injection region is higher than that of the electric injection region. Partitioned passivation is performed on the surface of the phosphorus emitter, and carbon and / or nitrogen atoms are introduced into the doped region, so that the interface passivation effect is improved; the electric injection region is not subjected to carbon and nitrogen doping and is not provided with a passive film, so that the influence of passivation on the contact resistivity is reduced; a conductive channel is introduced into the electric injection region for electric injection, so that the defect state of the phosphorus emitter can be further eliminated, and the recombination current is reduced.

The present invention belongs to the field of solar cell technology and discloses a 2D / 3D perovskite solar cell and its preparation method. A glass slide is added to the surface of the 2D perovskite layer to allow full contact between the PEAI solution and the 3D perovskite surface. PEAI is used as a 2D perovskite barrier layer, and a 2D covering layer is grown in situ on top of the 3D perovskite film. The annealing method of the 2D layer and the concentration of PEAI are improved. A low-temperature carbon slurry is used to replace the hole transport layer (HTM) and the metal electrode to prepare a 2D / 3D perovskite solar cell. The present invention uses a low-temperature carbon slurry to replace the expensive hole transport layer (HTM) and metal electrode, avoiding the long-term placement of the metal electrode and the perovskite layer. It also greatly reduces the experimental cost. The perovskite cell prepared by the present invention has low cost and significantly improved thermal stability. After heating at 70°C for 10 hours, it can still maintain 90% of the initial efficiency and the photoelectric efficiency can reach 14.63%.

The invention relates to the technical field of gel electrolyte, in particular to a method for constructing gel electrolyte on the surface of an electrode through in-situ self-initiation and application of the method. The method comprises the following steps: (1) dissolving a zinc salt in water to obtain a liquid electrolyte; (2) uniformly mixing a gel monomer, an initiator, a cross-linking agent and a liquid electrolyte to obtain a precursor solution; and (3) pouring the precursor solution on the surface of the negative electrode of the battery, covering the precursor solution with the positive electrode of the battery, and standing to realize in-situ construction of the gel electrolyte on the surface of the electrode. The solution is gelatinized through reducibility self-initiation of the metal electrode and is constructed on the surface of the electrode in situ, the electrochemical performance of the aqueous zinc metal is remarkably improved, meanwhile, the process steps are reduced, and the cost is reduced.

The invention relates to a large-area methylamine-free perovskite photovoltaic module and a preparation method thereof. The photovoltaic module comprises a substrate, a hole transport layer, a perovskite active layer, an interface passivation layer, an electron transport layer and a metal electrode, the hole transport layer is a nickel oxide / organic hole material composite layer; the organic hole material comprises PTAA, P3HT, MoO3 or a self-assembled monomolecular layer. The perovskite solar cell provided by the invention has remarkable advantages in performance and stability, and especially has excellent long-term stability under high-humidity and high-temperature conditions.

This invention discloses an enhanced lead-salt uncooled mid-wave infrared detector and its fabrication method, relating to the field of photoelectric detection technology. The detector comprises: a substrate, a reflective layer, a dielectric layer, a microstructure array layer, a lead-salt sensitive layer, a metal electrode layer, and a passivation layer. The fabrication method includes: fabricating a metal reflective layer on the substrate surface; fabricating a resonant cavity layer on the reflective layer; fabricating a microstructure array layer on the resonant cavity layer; fabricating a lead-salt sensitive layer on the microstructure array layer; sensitizing the lead-salt sensitive layer; fabricating a metal electrode on the lead-salt sensitive layer; and fabricating a passivation layer on the lead-salt sensitive layer and the metal electrode. The beneficial effect of this invention is that it combines the LSPR effect of the resonant cavity and the artificial plasmon resonance array (i.e., the metal microstructure array), which can effectively enhance the mid-wave infrared radiation absorption of the device. It has the characteristics of high performance, high sensitivity, and high stability, and is expected to be widely used in the field of mid-wave infrared detection.

The invention provides a manufacturing method of a type-II superlattice medium-wave infrared focal plane array chip and an infrared detector, and belongs to the field of infrared focal plane array chips. The problem that in the prior art, the surface leakage current of an infrared focal plane array chip is large due to the fact that the mesa etching depth is large is solved. The method comprises the following steps: growing and cleaning an epitaxial material; hard mask deposition, mesa photoetching and etching: obtaining a required mesa pattern on the hard mask through a photoetching technology, then etching an epitaxial material, etching the epitaxial material to form the mesa pattern, the mesa pattern comprising an upper electrode region and a lower electrode region, etching the upper electrode region to the boundary of the barrier layer and the absorption region, and etching the lower electrode region to the boundary of the barrier layer and the absorption region; etching a lower electrode region to the lower ohmic contact layer; manufacturing a metal electrode; a connecting piece is manufactured on the metal electrode to be connected with a reading circuit, and manufacturing of the infrared focal plane array chip is completed; the invention is applied to the II-type superlattice medium-wave infrared detector.

The invention discloses an imidazole derivative molecule modified solar cell and a preparation method thereof, and belongs to the technical field of solar cells. The cell sequentially comprises an ITO (Indium Tin Oxide) conductive glass layer, a nickel oxide passivation layer, a [4-(3, 6-dimethoxy-9H-carbazole-9-yl) butyl] phosphonic acid hole transport layer, an ITO (Indium Tin Oxide) conductive glass layer and a nickel oxide passivation layer from bottom to top, the thin film solar cell is characterized in that the thin film solar cell comprises a substrate, a metal Ag electrode layer, a Cs0.05 (FA0. 95MA0. 05) 0. 95Pb (I0. 95Br0. 05) 3 narrow-band gap perovskite thin film PVSK modified by 2-(2 ', 6'-dichloroanilino)-2-imidazoline, a (6, 6)-phenyl-C61-butyric acid methyl ester electron transport layer, a 2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthroline hole blocking layer and a metal Ag electrode layer; according to the scheme, perovskite defects are passivated through imidazole derivative molecules, double-interface passivation and crystallization regulation are achieved, the film quality is improved, and the crystal quality of the perovskite film is remarkably improved; due to effective passivation of the double interfaces, ion migration is obviously inhibited, the carrier transmission efficiency is effectively improved, and the moisture resistance of the perovskite thin film and the device stability are improved.

The invention discloses a graphene piezoresistive accelerometer, which relates to the technical field of sensor measurement, and comprises a support frame, a central island, a plurality of metal electrodes, a plurality of groups of connecting beams, a plurality of graphene films and a plurality of mass blocks, each inner side wall of the supporting frame is connected with the outer wall of the center island through a set of connecting beams, each connecting beam comprises a sensitive beam and a plurality of supporting beams, and the mass blocks are installed on the back side of the center island, the back side of each sensitive beam and the back side of each supporting beam. All the metal electrodes and all the graphene films are installed on the front end face of the supporting frame, every two metal electrodes are connected with one graphene film, the first end of the sensitive beam is connected with the supporting frame, the graphene films are arranged corresponding to the first end of the sensitive beam, and the thickness of the first end of the sensitive beam is smaller than that of other positions of the sensitive beam. According to the invention, the sensitivity is good, the influence of the inherent frequency on the sensitivity is small, and a high G value can be realized.

The invention provides a three-wafer bonding MEMS device and a preparation method thereof, the three-wafer bonding MEMS device comprises a first wafer, a second wafer, a third wafer, an insulating layer and a metal electrode, the first wafer comprises a plurality of first grooves, the bottom of each first groove is communicated with at least one silicon groove, and each silicon groove is filled with an insulating material; protruding silicon-silicon bonding platforms are arranged between the first grooves and inside the first grooves. The second wafer is connected with the first wafer through a silicon-silicon bonding platform, and a plurality of strip holes are formed in the second wafer; the third wafer comprises a plurality of second grooves; a limiting bulge can be arranged in the second groove; a raised eutectic bonding platform is arranged between the interior of the second groove and the second groove, and the third wafer is bonded with the second wafer; the insulating layer covers the first wafer; the plurality of metal electrodes are disposed on the insulating layer. According to the invention, the problem that the electrical parameters of the silicon-silicon bonding process cannot be tested and represented in the production and manufacturing of the MEMS device is solved.

The invention belongs to the technical field of semiconductors and solar cells, and discloses a preparation method of a low-cost electroplating copper grid line heterojunction solar cell. In order to solve the problems that the cost is high when a metal electrode in a heterojunction solar cell is prepared through traditional screen printing low-temperature paste, and efficiency improvement is limited due to the fact that a narrower grid line is difficult to prepare in a screen printing mode, in-situ pretreatment is carried out on an N face to carry out surface roughening; then, copper electroplating is carried out in a light-induced horizontal electroplating mode to prepare an N-face copper electrode; and then turning over the battery piece to carry out P-surface copper electroplating so as to prepare the heterojunction solar battery with double-surface copper-electroplated grid lines.

The invention provides a pulverized coal temperature nuclear fusion composite glow flame burner, and relates to the field of cement production. The burner comprises: a metal elbow; the thermonuclear fusion excitation assembly comprises a metal shell, a metal electrode, an insulating connecting piece and an electrode tip; an opening is formed in the portion, located in the metal bent pipe, of the metal shell. The metal electrode is arranged in the metal shell and is connected with the metal shell through the insulating connecting piece; the metal shell is provided with a conveying pipe communicated with an inner cavity of the metal shell, a conveying channel is arranged in the metal electrode, one end of the conveying channel penetrates through the outer side wall of the first end of the metal electrode to form an air outlet, the electrode tip is arranged at the air outlet, and the electrode tip is provided with a flow guide through hole communicated with the conveying channel. The conveying channel communicates with an air supply valve set. By actively constructing the plasma field, the combustion stability in the starting stage, the low-load working condition or the kiln condition fluctuation can be remarkably improved, meanwhile, nuclear energy gain is fully utilized to achieve energy conservation and consumption reduction, and the problems of insufficient combustion and flameout are effectively avoided.

A metal-semiconductor contact structure and a preparation method thereof, a solar cell and a photovoltaic module are provided. The metal-semiconductor contact structure includes a metal electrode and a semiconductor layer in contact with each other. The metal electrode has a metal element, and the semiconductor layer has a semiconductor element and a doping element for doping the semiconductor layer. A contact interface between the metal electrode and the semiconductor layer has a hole and a conductive structure. The conductive structure includes a conductive eutectic adjacent to the semiconductor layer, and a conductive crystal extending from the conductive eutectic into the hole. The conductive eutectic includes a eutectic formed by the metal element and the semiconductor element, and the conductive crystal includes a crystal formed by crystallization of the metal element.

The invention discloses an uncooled infrared detector and a manufacturing method thereof, and relates to the technical field of detectors, the uncooled infrared detector comprises a readout circuit, the readout circuit is provided with a micro-bridge structure and an umbrella-shaped absorption structure, the micro-bridge structure comprises a metal electrode, a reflecting layer, a first sacrificial layer, a first supporting layer, an electrode layer and a thermosensitive layer, and the electrode layer is arranged on the supporting layer. The thermosensitive layer is arranged on the electrode layer, and the first passivation layer is arranged at the top of the microbridge structure. By adopting the thermosensitive layer with a three-layer structure of vanadium oxide, vanadium and vanadium oxide and optimizing sputtering process parameters, the sensitivity and the stability of the thermosensitive film are improved, secondly, due to the design of an umbrella-shaped absorption structure and the synergistic effect of the second sacrificial layer, the second supporting layer and the absorption layer, the absorption rate and the filling rate of an infrared pixel are improved, and the stability of the film is improved. Not only is the absorption efficiency of infrared radiation enhanced, but also a heat conduction path is optimized, so that the response speed and the signal-to-noise ratio of the detector are improved.

The invention provides an organic electroluminescent device, and relates to the technical field of organic electroluminescence. According to the organic light-emitting device, the compound in the formula 1 serves as a nucleation inhibition layer material, has weak metal adsorption capacity and good film-forming property, can inhibit metal electrode materials from being deposited on the surface of the nucleation inhibition layer material, effectively improves the light transmittance of the organic light-emitting device, and further improves the performance of the organic light-emitting device. The nucleation inhibition layer material disclosed by the invention has a very good application prospect.

The invention provides a photovoltaic module anti-icing and defrosting structure based on a composite coating and a control method thereof, a system comprises a control unit, and a super-hydrophobic coating, a metal electrode layer, a phase change energy storage layer and a selective radiation layer which are sequentially laminated on the surface of photovoltaic glass, and the metal electrode layer is electrically connected with a pulse power supply. The control method comprises the following steps: M1: daytime working mode: the selective radiation layer radiates the heat of the photovoltaic module into the air to reduce the surface temperature of the photovoltaic module and reduce moisture condensation; m2: a night frost prevention mode: when the temperature is reduced to-2.5 DEG C, the phase change energy storage layer releases latent heat, and the frosting speed is delayed for 2-3 hours; due to the surface contact angle of the super-hydrophobic coating, water drops are difficult to stay and nucleate, and the ice adhesive force is less than 50kPa; and M3, a pulse deicing mode: when the thickness of the ice layer is detected to be greater than or equal to 0.2 mm, the current of a pulse power supply passes through a metal electrode layer, and instantaneous temperature rise is generated on an ice-glass interface, so that the ice layer is stripped. According to the system, multiple coatings are cooperated, so that the energy consumption is greatly reduced while the deicing and demisting effects are ensured.

The invention discloses an ultrathin battery diaphragm with high cohesiveness and safety as well as a preparation method and application of the ultrathin battery diaphragm. The battery diaphragm comprises a polyolefin base material and polyvinylidene fluoride coatings arranged on the two sides of the polyolefin base material, wherein each polyvinylidene fluoride coating comprises aluminum oxide particles, a first polyvinylidene fluoride copolymer and a second polyvinylidene fluoride copolymer; the particle size of the aluminum oxide particles is below 0.4 micron; both the first polyvinylidene fluoride copolymer and the second polyvinylidene fluoride copolymer contain vinylidene fluoride and hexafluoropropylene monomer units, and the molar percentage of the hexafluoropropylene monomer unit in the first polyvinylidene fluoride copolymer is lower than that of the hexafluoropropylene monomer unit in the second polyvinylidene fluoride copolymer. The battery diaphragm has ultra-thin thickness, has high binding power with a metal electrode plate, and is high in battery safety when being used for a battery.

A method of preparing 2-hydroxyadpic acid and adipic acid is provided. The method of preparing 2-hydroxyadpic acid and adipic acid comprises a step of the electrolysis of 2,5-furandicarboxylic acid using a metal electrode at a constant current in a sulfuric acid solution containing a quaternary ammonium salt. The metal electrode is a bismuth electrode or a lead electrode. The quaternary ammonium salt is represented by formula (I):wherein R1 to R4 are independently a C2-5 hydrocarbon group, and X− is ClO4−, H2PO4−, or Br−.

The invention discloses a friction nano-generator, which comprises an ethyl cellulose modified porous conductive material and a flexible polymer material, wherein the ethyl cellulose modified porous conductive material contains a metal electrode plate, and the flexible polymer material is used for packaging the ethyl cellulose modified porous conductive material. The invention also discloses a preparation method of the friction nano-generator, and the method comprises the following steps: S1, modifying the porous conductive material with a hydrolyzed silane solution, drying the modified porous conductive material, attaching a metal electrode plate to one end of the porous conductive material, and soaking the porous conductive material in an ethyl cellulose solution to obtain an ethyl cellulose modified porous conductive material; and S2, packaging the ethyl cellulose modified porous conductive material by using a flexible polymer material to obtain the friction nano-generator. The friction nano-generator obtained by the invention can collect vibration information in the operation of mechanical equipment, and is applied to vibration waveform recognition as a sensor.

The invention relates to the technical field of perovskite solar cell functional thin film packaging, in particular to a solar cell with a perovskite active layer packaged by a double-sided thin film and a preparation method of the solar cell. Al2O3 is used for depositing a layer of Al2O3 thin film between the perovskite active layer and a P-type carrier transport layer (hole transport layer HTL); a layer of SiO2 thin film is deposited between a perovskite active layer and an N-type carrier transport layer (electron transport layer ETL), and a double-sided thin film wrapping layer is formed by an Al2O3 thin film and the SiO2 thin film; through the design and preparation method of the Al2O3 / SiO2 double-sided thin film packaging perovskite active layer, the core stability problem of the perovskite active layer is effectively solved. The double-sided packaging structure can efficiently block water and oxygen permeation, and the perovskite is prevented from being decomposed due to water and oxygen erosion; meanwhile, diffusion of metal electrode ions to a perovskite layer and migration of halogen ions in perovskite to the electrode can be inhibited, bidirectional damage is reduced, and the sensitivity of perovskite to water and oxygen and performance degradation caused by interface ion migration are relieved fundamentally.

The invention belongs to the technical field of solar cells, and particularly relates to a perovskite solar cell with cysteine-silver clusters implanted into a perovskite active layer in a targeted mode, a cysteine-silver cluster colloidal solution is prepared by adopting a liquid-phase pulse laser irradiation technology, the cysteine-silver clusters serve as an additive and are implanted into the perovskite solution, and the perovskite active layer is prepared. And sequentially spin-coating a hole transport layer, a perovskite layer and an electron transport layer, and finally evaporating a metal electrode to prepare the perovskite solar cell with the cysteine-silver cluster target implanted perovskite active layer. The cysteine-silver cluster is implanted into the perovskite solution, and the smaller critical dimension of the cysteine-silver cluster can be used as a nucleation site, so that the growth of perovskite crystals is regulated and controlled, the defects of the perovskite thin film are passivated, the residual stress of the thin film is released, the formation of gradient energy levels of the perovskite layer and the electron transport layer is promoted, and the extraction and transmission of electrons are improved; the perovskite solar cell with higher efficiency is obtained, the implantation mode is convenient, and the preparation process is simple.