8466 results about "Metal electrodes" patented technology

A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.

A touch panel module in which a conductive film in which a mesh conductive layer composed of a mesh-like metal electrode is formed on a support, a λ / 4 plate, a polarizing plate, and a protective layer are arranged in this order. A λ / 4 plate is further arranged on a side of the conductive film opposite to the protective layer. The touch panel module has a visible light diffuse reflectivity of 2% or less, which is measured from the protective layer.

A process for producing metal nitride thin films comprising doping the metal nitride thin films by atomic layer deposition (ALD) with silicon or boron or a combination thereof. The work function of metal nitride thin films, which are used in metal electrode applications, can efficiently be tuned.

Active metal and active metal intercalation electrode structures and battery cells having ionically conductive protective architecture including an active metal (e.g., lithium) conductive impervious layer separated from the electrode (anode) by a porous separator impregnated with a non-aqueous electrolyte (anolyte). This protective architecture prevents the active metal from deleterious reaction with the environment on the other (cathode) side of the impervious layer, which may include aqueous or non-aqueous liquid electrolytes (catholytes) and / or a variety electrochemically active materials, including liquid, solid and gaseous oxidizers. Safety additives and designs that facilitate manufacture are also provided.

A plasma processing system 10 includes a processing chamber 100, a microwave source 900 that outputs a microwave, an inner conductor of a coaxial waveguide 315a that transfers the microwave, a through-hole 305a, a dielectric plate 305 that transmits the microwave transferred through the inner conductor 315a and discharges it into a processing chamber 100, and a metal electrode 310 that is coupled to the inner conductor 315a via the through-hole 305a, the metal electrode 310 being exposed on the surface of the dielectric plate 305 that faces the substrate with at least a portion of the metal electrode 310 being adjacent to the surface of the dielectric plate 305 that faces the substrate. A surface of the exposed surface of the metal electrode 310 is covered by the dielectric cover 320.

The invention provides a method for determining the concentration of an analyte in a sample comprising the steps of heating the sample and measuring the concentration of the analyte or the concentration of a species representative thereof in the sample at a predetermined point on a reaction profile by means that are substantially independent of temperature. Also provided is an electrochemical cell comprising a spacer pierced by an aperture which defines a cell wall, a first metal electrode on one side of the spacer extending over one side of the aperture, a second metal electrode on the other side of the spacer extending over the side of the aperture opposite the first electrode, means for admitting a sample to the cell volume defined between the electrodes and the cell wall, and means for heating a sample contained within the cell.

A neurostimulating lead is provided for use in stimulating the spinal chord, spinal nerves, or peripheral nerves or for use in deep brain stimulation that comprises an elongated, flexible lead having improved steerability properties. The lead includes a plurality of thin-film metal electrodes connected by conductors embedded within the wall of the lead to electrical contacts at the proximal end of the lead. The lead is further designed to include an internal lumen for use with a guidewire in an over-the-wire lead placement.

A capacitor structure comprising a bottom electrode, an insulator and a top electrode, and method for manufacturing the same. The bottom and top electrodes preferably include a metal portion and a conducting oxygen-containing metal portion. In one embodiment, a layer of ruthenium is deposited to form a portion of the bottom electrode. Prior to deposition of the insulator, the ruthenium is annealed in an oxygen-containing environment. The insulator is then deposited on the oxygen-containing ruthenium layer. Formation of the top electrode includes depositing a first metal on the insulator, annealing the first metal and then depositing a second metal. The first and second metals may be ruthenium.

A semiconductor device includes a semiconductor chip and a printed circuit board. Metal electrodes of the semiconductor chip and the internal connection terminals of the printed circuit board are electrically connected through the metallic joining via precious metal bumps. A melting point of a metal material constituting each of the metallic joining parts is equal to or higher than 275 degrees, and a space defined between the chip and the board is filled with resin (under fill) containing 50 vol % or more inorganic fillers.

The present invention discloses a novel transistor structure employing semiconductive metal oxide as the transistor conductive channel. By replacing the silicon conductive channel with a semiconductive metal oxide channel, the transistors can achieve simpler fabrication process and could realize 3D structure to increase circuit density. The disclosed semiconductive metal oxide transistor can have great potential in ferroelectric non volatile memory device with the further advantages of good interfacial properties with the ferroelectric materials, possible lattice matching with the ferroelectric layer, reducing or eliminating the oxygen diffusion problem to improve the reliability of the ferroelectric memory transistor. The semiconductive metal oxide film is preferably a metal oxide exhibiting semiconducting properties at the transistor operating conditions, for example, In2O3 or RuO2. The present invention ferroelectric transistor can be a metal-ferroelectric-semiconductive metal oxide FET having a gate stack of a top metal electrode disposed on a ferroelectric layer disposed on a semiconductive metal oxide channel on a substrate. Using additional layer of bottom electrode and gate dielectric, the present invention ferroelectric transistor can also be a metal-ferroelectric-metal (optional)-gate dielectric (optional)-semiconductive metal oxide FET.

Projections / depressions forming a two-dimensional periodic structure are formed in a surface of a semiconductor multilayer film opposing the principal surface thereof, while a metal electrode with a high reflectivity is formed on the other surface. By using the diffracting effect of the two-dimensional periodic structure, the efficiency of light extraction from the surface formed with the projections / depressions can be improved. By reflecting light emitted toward the metal electrode to the surface formed with the projections / depressions by using the metal electrode with the high reflectivity, the foregoing effect achieved by the two-dimensional periodic structure can be multiplied.

The present invention provides a method and associated structure for forming an electrostatically-doped carbon nanotube device. The method includes providing a carbon nanotube having a first end and a second end. The method also includes disposing a first metal contact directly adjacent to the first end of the carbon nanotube, wherein the first metal contact is electrically coupled to the first end of the carbon nanotube, and disposing a second metal contact directly adjacent to the second end of the carbon nanotube, wherein the second metal contact is electrically coupled to the second end of the carbon nanotube. The method further includes disposing a first metal electrode adjacent to and at a distance from the first end of the carbon nanotube, wherein the first metal electrode is capacitively coupled to the first end of the carbon nanotube, and disposing a second metal electrode adjacent to and at a distance from the second end of the carbon nanotube, wherein the second metal electrode is capacitively coupled to the second end of the carbon nanotube. The method still further includes selectively applying a first bias to the first metal electrode to electrostatically dope the first end of the carbon nanotube and selectively applying a second bias to the second metal electrode to electrostatically dope the second end of the carbon nanotube.

The present invention provides a metal electrode stabilised by a coating, the coating comprising a sulfur containing moiety in its molecular structure. The coating may also include a hydrophilic group and a spacer between the sulfur containing moiety and the hydrophilic group. Preferably, the sulfur containing moiety is selected from the group comprising thiol, disulfide and SOx, and the hydrophilic group is selected from the group comprising hydroxyl, amine, carboxyl, carbonyl, oligo (ethylene oxide) chain, and zwitterionic species. Compounds useful in the present invention include 2-mercaptoethanol, 2-mercaptoethylamine, 3-mercaptopropionic acid, thiophene, 4-carboxythiophene, cysteine, homocysteine, and cystine.

The present invention generally relates to nanoscale heterostructures and, in some cases, to nanowire heterostructures exhibiting ballistic transport, and / or to metal-semiconductor junctions that that exhibit no or reduced Schottky barriers. One aspect of the invention provides a solid nanowire having a core and a shell, both of which are essentially undoped. For example, in one embodiment, the core may consist essentially of undoped germanium and the shell may consist essentially of undoped silicon. Carriers are injected into the nanowire, which can be ballistically transported through the nanowire. In other embodiments, however, the invention is not limited to solid nanowires, and other configurations, involving other nanoscale wires, are also contemplated within the scope of the present invention. Yet another aspect of the invention provides a junction between a metal and a nanoscale wire that exhibit no or reduced Schottky barriers. As a non-limiting example, a nanoscale wire having a core and a shell may be in physical contact with a metal electrode, such that the Schottky barrier to the core is reduced or eliminated. Still other aspects of the invention are directed to electronic devices exhibiting such properties, and techniques for methods of making or using such devices.

A display includes a polarizing member and a reflective display element behind an EL element. The EL element self-emits light to display information and doubles as a display-use light source for the reflective display element. In a sufficiently bright environment, ambient light enters a liquid crystal layer after passing through a frontal substrate of the reflective display element, and is reflected from a metal electrode to produce displays. In addition to the direct light from the EL element, light that enters the liquid crystal layer is simultaneously used. In a dark environment, the EL element emits light, and displayed contents are visible owing to the reflection from the metal electrode as well as directly exiting light. The structure makes it possible to provide a novel type of display that allows a user to select one of various display modes at his / her own discretion according to surrounding conditions and that also shows information in a clearly visible fashion, be it outdoors under clear skies or in a dark place, without giving up their thin, lightweight features.