2063 results about "Metal electrodes" patented technology

The invention discloses a preparation method and application of a novel ionized water gel-based moisture power generation material. The material is composed of a carbon coating fabric, ionized water gel and a patch metal electrode. Wherein the nano carbon black is used as a conductive filler of the hydrogel and can enhance electric energy output by promoting functional group dissociation and ion migration. The high-hygroscopicity sea salt in the hydrogel can enhance the capture and transmission capability of the material on water molecules in the atmosphere, and ensures the continuous power output capability of the moisture power generation material. Due to the design of the zigzag dry-wet interface, the wettability between the hydrogel and the carbon black coating can be improved, the moisture absorption rate is increased, the contact area is increased, and therefore the power generation power is improved. The metal patch electrode can ensure the stability of long-term power generation of the material, and can be customized to reduce the contact resistance. A moisture power generation device prepared from the material can be used as a passive energy supply device and is suitable for the fields of self-powered sensors, wearable electronic equipment and the like.

The invention discloses a semiconductor device based on two-dimensional semi-metal interface optimized contact and a preparation method thereof, which are applied to devices including a two-dimensional semiconductor-based metal-semi contact structure, such as thin film transistors, Schottky junction diodes / transistors and the like. According to the invention, the two-dimensional semi-metal interface layer is introduced between the metal electrode (source and drain electrodes) and the two-dimensional material (conductive channel) through PVD and CVD processes, so that pollution and defects caused by additional transfer steps are avoided, preparation of the interface layer with large area, high uniformity and controllable thickness can be realized, and industrial requirements are met. According to the semiconductor device provided by the invention, the two-dimensional semimetal is introduced as the interface layer, so that the contact resistance between the source and drain electrodes and the conductive channel is obviously optimized, Fermi level pinning is eliminated, and the adjustable Schottky barrier height is realized; and a brand new solution is provided for development and industrial application of a metal-semiconductor contact structure device of a high-performance two-dimensional semiconductor.

The invention provides a synthetic antiferromagnetic memory cell driven by spin orbit moment without magnetic field assistance, and belongs to the technical field of magnetic memory, the synthetic antiferromagnetic memory cell comprises a magnetic tunnel junction of a multilayer film structure, the magnetic tunnel junction comprises a heavy metal layer and a synthetic antiferromagnetic free layer located on the heavy metal layer; the tunneling insulating layer is located on the synthetic antiferromagnetic free layer, the reference layer is located on the tunneling insulating layer, and the metal electrode layer is located on the reference layer; wherein the synthetic antiferromagnetic free layer comprises an inclined vertical magnetic layer, a non-magnetic metal layer and a coupling magnetic layer which are stacked in sequence, and the inclined vertical magnetic layer and the coupling magnetic layer are subjected to antiferromagnetic coupling through the middle non-magnetic metal layer; the inclined perpendicular magnetic layer has inclined perpendicular anisotropy. According to the invention, deterministic magnetization flipping driven by spin orbit moment and resistance state control of the magnetic tunnel junction memory cell without the assistance of an external magnetic field are realized.

The invention provides a pressure sensor based on silicon-silicon bonding and a preparation method thereof. The preparation method comprises the following steps: providing a low-resistance silicon wafer, forming a silicon deep hole in a first surface of the low-resistance silicon wafer, and depositing an isolation material in the silicon deep hole to form an isolation ring; etching the first surface to form a shallow groove and a conductive silicon column to obtain a low-resistance cap wafer; providing an SOI wafer, performing ion implantation on the first surface of the SOI wafer to form a resistance region, and obtaining a substrate wafer; bonding the low-resistance cap wafer with the substrate wafer; grinding the second surface of the low-resistance cap wafer until the isolating ring is exposed; depositing an insulating layer on the second surface of the low-resistance cap wafer, and forming a metal electrode on the insulating layer; and forming a back cavity structure on the second surface of the substrate wafer, exposing the top silicon of the SOI wafer, and forming a sensitive film layer. The conductive silicon column is made of low-resistance silicon, copper ion pollution is avoided, the preparation process is simple, and the period is controllable; the device obtained based on the silicon-silicon bonding process has high bonding strength and high air tightness.

The invention discloses a quasi one-dimensional (TaSe4) 2I and two-dimensional MoTe2 mixed-dimensional heterojunction phototransistor detector and a preparation method thereof, the detector sequentially comprises a Si substrate, a SiO2 gate dielectric layer, a quasi one-dimensional (TaSe4) 2I and two-dimensional MoTe2 nano film from bottom to top, the quasi one-dimensional (TaSe4) 2I and MoTe2 nano film are respectively provided with a metal electrode, and a heterostructure of the (TaSe4) 2I, the MoTe2 and the metal electrodes is formed. The preparation method comprises the following steps: (1) transferring the (TaSe4) 2I nanowire to the Si substrate; (2) transferring the MoTe2 nano film to one side of the (TaSe4) 2I nanowire; (3) preparing a pattern of a bottom electrode; (4) positioning, exposing and developing the pattern of the bottom electrode to expose the electrode part needing to be evaporated; and (5) preparing a metal electrode. According to the invention, the composite effect of a (TaSe4) 2I / MoTe2 heterojunction is utilized, and dark current is inhibited through a vertical structure; moTe2 is utilized to increase light absorption, and meanwhile, grid voltage is applied, so that light current is improved, and high responsivity and external quantum efficiency are obtained.

Methods, apparatus, devices, subsystems, and systems related to irregular devices and methods for designing and fabricating the irregular devices are provided. In one aspect, a device includes: a backplane comprising a plurality of circuits and a plurality of elements arranged on the backplane. Each of the plurality of elements includes a metallic electrode. Each of the metallic electrodes is coupled to a respective circuit of the plurality of circuits in the backplane through a corresponding via of a plurality of vias, and a position relationship between the metallic electrode and the corresponding via satisfies one or more criteria.

The invention relates to the technical field of non-dispersive infrared gas sensors, in particular to a Van der Waals photoelectric detector, a preparation method and application thereof and a non-dispersive infrared gas sensor. The invention provides a Van der Waals photoelectric detector. The Van der Waals photoelectric detector comprises a substrate layer, a heterojunction layer and a double-end metal electrode layer, the heterojunction layer is of a heterojunction structure formed by partially embedding a first Van der Waals material layer into the bottom of a second Van der Waals material layer, the whole bottom of the first Van der Waals material layer is in contact with the upper surface of the substrate layer, and part of the bottom of the second Van der Waals material layer is in contact with the upper surface of the substrate layer; the double-end metal electrode layer comprises a first metal electrode and a second metal electrode, the first metal electrode is located on the surface of the first Van der Waals material layer, and the second metal electrode is located on the surface of the second Van der Waals material layer. The Van der Waals photoelectric detector has extremely low interface defects and relatively low thermal noise.

The invention discloses high-crystallinity superfine nickel powder and a preparation method thereof.The generation size of nickel powder in a liquid phase is adjusted through ultrasonic waves, molten salt heat treatment is combined to obtain the high-crystallinity superfine nickel powder, and the preparation method specifically comprises the following steps that an aqueous solution in which a nickel precursor is dissolved is mixed with a reducing agent; under the action of ultrasonic waves, an alkaline solution is added for a reaction, and nickel powder particles with the adjustable particle size are prepared; and then uniformly mixing the nickel powder with combined salts in different proportions, carrying out heat treatment at different temperatures, and cleaning and separating a cooled product to finally obtain the high-crystallinity superfine nickel powder with the size of 100-200nm. The nickel powder has good size uniformity, oxidation resistance and thermal shrinkage resistance, and can be applied to various fields such as conductive paste, metal electrodes and magnetic shielding materials.

The invention discloses a micro-fluidic liquid cooling heat dissipation module integrated with piezoelectric driving, a chip and application, and belongs to the technical field of chip liquid cooling heat dissipation. The micro-fluidic liquid cooling heat dissipation module comprises a micro-fluidic substrate and a piezoelectric film, the piezoelectric film covers the surface of one side of the microfluidic substrate; a groove channel is formed in the surface of one side, facing the piezoelectric film, of the micro-fluidic substrate; a loop cavity defined by the piezoelectric film and the groove channel forms a micro-channel; a metal electrode layer, a heat source area and a heat exchange area are respectively arranged at different positions, corresponding to the micro-channel, on the surface of one side, deviating from the micro-fluidic substrate, of the piezoelectric film. The micro-fluidic liquid cooling heat dissipation module can actively drive the cooling liquid to flow to a heat source area, and compared with a traditional micro-channel heat dissipation mode, the micro-fluidic liquid cooling heat dissipation module has very high flexibility in fluid driving, does not need an external driving pump, can greatly reduce the size of a packaged chip, and is beneficial to development of chip integration and microminiaturization.

The invention discloses a preparation method of a multilayer co-fired ceramic disc of an electrostatic chuck, and belongs to the technical field of electrostatic chucks, and the preparation method comprises the following steps: S1, preparing organic suspension ceramic slurry with certain viscosity and uniform dispersion; s2, the ceramic slurry is manufactured into a ceramic green sheet with a certain thickness in a tape casting mode; s3, various holes are formed in the ceramic green sheet; s4, preparing metal electrode slurry; s5, metal conduction slurry is filled in the interconnection conduction holes of the green body sheet in a hole filling mode, and an adsorption electrode layer, a heating electrode layer, a parallel electrode layer and an interconnection conduction Pad are manufactured in a silk-screen printing mode; s6, green body blocks are manufactured; s7, laminating together by using a laminating machine in a positioning and laminating manner; s8, the laminated green ceramic plates are placed in a debinding furnace for glue discharging; and S9, performing high-temperature sintering in a high-temperature sintering furnace to obtain the ceramic.

The invention discloses a multicolor photoelectric response synaptic device and a preparation method thereof. The multicolor photoelectric response synaptic device is of a multi-layer structure. The multilayer structure comprises a transparent conductive electrode layer, a hole transport material layer, a lead-free perovskite layer, an electron transport material layer, an organic semiconductor charge transfer compound layer and a metal electrode layer in sequence along the light incidence direction. The preparation method comprises the steps of preparing the transparent conductive electrode layer; sequentially preparing a hole transport material layer, a lead-free perovskite layer, an electron transport material layer and an organic semiconductor charge transfer compound layer on the transparent conductive electrode layer through a spin coating method; and preparing the metal electrode layer on the organic semiconductor charge transfer compound layer through vacuum evaporation. The multicolor photoelectric response synaptic device is reasonable in structural design, can realize ultraviolet-visible-near infrared multicolor photoelectric synaptic function simulation, can realize a color identification function on red light, green light and blue light in a visible light wave band, and has a good application prospect.

The invention discloses a TBC solar cell and a preparation method thereof. The preparation method of the TBC solar cell comprises the following steps: cleaning and polishing an N-type silicon substrate; depositing a first tunneling oxide layer and a first intrinsic polycrystalline silicon layer on the back surface; boron diffusion; performing laser grooving, etching and cleaning; depositing a second tunneling layer and a second intrinsic polycrystalline silicon layer on the back surface; phosphorus diffusion; performing laser grooving, etching and cleaning; depositing an aluminum oxide film and an anti-reflection film on two sides; and preparing a metal electrode. According to the invention, the phosphorus-doped polycrystalline silicon layer is added on the boron-doped polycrystalline silicon layer, the second tunneling layer of the interlayer can form a secondary gettering effect, and the passivation level of the boron-doped polycrystalline silicon layer is improved. A built-in electric field formed by the two PN junctions generates more carriers, more holes are forced to be gathered and transversely transmitted at the boron-doped polycrystalline silicon layer and more easily collected by a metal electrode, and a back suede structure and a carrier collection optimization structure are added on the basis of not increasing the process flow.

The invention discloses an ultra-compact near-infrared circularly polarized photoelectric detector, which comprises an upper metal electrode plating layer, a lower metal electrode plating layer, a semiconductor substrate, a hexagonal close packing array substrate and a chiral super-surface layer, and can realize rapid and high-responsivity near-infrared circular polarization dependent light detection, and light signals can be directly converted into visible electric signals under zero bias voltage; different photoelectric signal conversion effects can be generated from different directions under irradiation of light with different wavelengths, and reference is provided for preparation of a multi-mode near-infrared circularly polarized photoelectric detector. The invention also discloses a preparation method of the ultra-compact near-infrared circularly polarized photoelectric detector, the preparation method is simple and convenient, the cost is relatively low, batch preparation can be realized, and the produced ultra-compact near-infrared circularly polarized photoelectric detector has the characteristics of high light absorbance, quick response and ultrahigh integration level.

The invention provides a compound containing a silicon group and an organic electroluminescent device thereof, and particularly relates to the technical field of organic electroluminescent materials. When the compound containing the silicon group is used as a covering layer material, the glass transition temperature is high, the thermal stability and the chemical stability are good, the light transmittance of a device can be improved, aging of the device is delayed, and therefore the service life of the device is effectively prolonged; and the compound has weak metal adsorption capacity, and can effectively inhibit the deposition of a metal electrode material on the surface of a nucleation inhibition layer when being applied to the nucleation inhibition layer, thereby improving the performance of the device. In conclusion, the silicon group-containing compound provided by the invention can be widely applied to the fields of panel display and the like, and has a good development prospect.

The invention discloses a flexible pressure sensor based on a liquid metal electrode and a preparation method thereof, and relates to the technical field of flexible sensing. The flexible pressure sensor comprises a liquid metal electrode layer and an ionic dielectric layer. The liquid metal electrode layer comprises an upper electrode layer and a lower electrode layer. The upper electrode layer comprises an upper electrode packaging layer, an upper electrode adhesion layer and an upper liquid metal layer; the lower electrode layer comprises a lower liquid metal layer, a lower electrode adhesion layer and a lower electrode packaging layer; the ionic dielectric layer is disposed between the upper liquid metal layer and the lower liquid metal layer. Liquid metal with high conductivity and ductility is used as a sensing electrode, the wettability difference between the liquid metal electrode and a sensor substrate and between the liquid metal electrode and a middle dielectric layer is comprehensively utilized, and the characteristic that the substrate and the middle dielectric layer have rigidity gradient is utilized, so that the stability of the liquid metal electrode structure in the pressure circulation action process is ensured; and the interface double-electric-layer capacitor is prevented from being interfered by mechanical deformation such as stretching, bending and folding.

The invention belongs to the technical field of back contact cell preparation, and particularly relates to a back contact cell of an opening semiconductor without etching and a preparation method thereof, and the method comprises the steps: S103, carrying out the polishing or texturing of the back surface of a silicon wafer obtained in S102; s104, depositing an intrinsic crystalline silicon layer on the back surface of the silicon wafer; s105, the non-target deposition area is masked through a hard mask plate, and N-type crystalline silicon layers which are alternately arranged are deposited on the back face; replacing the mask of the hard mask plate to form a P-type crystalline silicon layer and an overlapping region; s106, depositing a conductive film layer on the back surface of the silicon wafer; s107, an opening is formed in the conductive film layer to form an isolation groove, and the width W4 of the isolation groove is controlled to range from 0.03 mm to 0.15 mm; and S108, forming a metal electrode on the back surface. According to the invention, the back semiconductor does not need to be opened by etching, the technological process is greatly simplified, etching damage is avoided, and the cell conversion efficiency, the cell stability and the production yield are improved.

The invention belongs to the technical field of photoelectric detection, and discloses a heterojunction dual-band photoelectric detector based on a two-dimensional material, which comprises a substrate layer, an insulating layer, a molybdenum disulfide layer, graphene, black phosphorus and a metal electrode, the insulating layer is formed above the substrate layer, the molybdenum disulfide layer is located above the insulating layer, the molybdenum disulfide layer is formed above the insulating layer, no less than two layers of graphene are arranged above the molybdenum disulfide layer, and the top layer is multi-layer black phosphorus; the molybdenum disulfide layer, the graphene and the black phosphorus are in contact through Van der Waals force, a source electrode and a drain electrode of a formed heterostructure are connected with the metal electrode, and the molybdenum disulfide layer and the black phosphorus are isolated through the graphene and do not make contact with each other. In the invention, the intrinsic dark current in direct proportion to the effective transmission volume of the device is greatly reduced, and meanwhile, the current carriers are limited in a two-dimensional plane and are very easy to regulate and control by a local electric field, so that the dark current of the device can be further reduced, and the problem that the detector prepared from most traditional materials needs refrigeration at present can be solved.

The invention belongs to the technical field of integrated photoelectronics, and discloses a phase change photosynaptic device array and a preparation method thereof. The synaptic device array is of a cross array structure formed by a plurality of phase-change optical synaptic cells through directional couplers with the same number, an arc waveguide in each phase-change optical synaptic cell comprises a phase-change waveguide section, a heating layer is arranged above a phase-change material layer, and an isolating layer is arranged between a metal electrode and the waveguide. According to the synaptic device array, current joule heat generated by the heating layer under the action of electric pulses is transmitted to the phase-change material layer, so that the state of the phase-change material layer is changed, meanwhile, the isolation layer is used for shielding absorption and interference of the metal electrode on optical signals in the waveguide, and the optical loss of the array is reduced; therefore, the problem of heating structure integration of the phase-change photosynaptic device array can be effectively solved, and effective modulation of the phase-change photosynaptic device array is realized.

The invention relates to the technical field of semiconductors, in particular to a columnar array enhanced photoelectric detector and a preparation method thereof, and the method comprises the following steps: depositing a continuous GaN layer on a substrate through an epitaxial growth method; forming a columnar array structure pattern and an electrode region on the GaN layer through a photoetching process, and removing a part of the GaN layer through an etching process to form an exposed columnar GaN array; depositing a metal electrode layer on two sides of the GaN array, and forming ohmic contact or Schottky contact with the GaN layer to obtain a photoelectric detector; the photoelectric detector is connected with a peripheral circuit to form a complete columnar array enhanced photoelectric detector system, the GaN layer of the columnar array structure is adopted, multiple times of reflection and interference on incident light are achieved, and therefore the detection efficiency and the response speed of the photoelectric detector are improved.

The invention relates to a preparation method of a local ITO interconnected perovskite-TOPCon laminated cell, which comprises the following steps: taking an n-type monocrystalline silicon wafer as a substrate, cleaning and texturing, diffusing boron on the back to form a P + emitter, oxidizing at high temperature, and treating the surface through acid etching and alkali polishing; sequentially preparing a tunneling oxide layer and a phosphorus-doped polycrystalline silicon layer on the front surface, annealing and crystallizing, depositing an aluminum oxide film and a multi-layer silicon nitride film on the back surface after cleaning, and depositing a single-layer silicon nitride film on the front surface; preparing a back metal electrode, etching according to a designed pattern to remove a local silicon nitride film on the front surface, sequentially preparing an ITO interconnection layer, a hole transport layer, a perovskite layer, a passivation layer, an electron transport layer and an ITO transparent conductive layer on the front surface, and finally preparing a front metal electrode and solidifying to form a contact electrode. According to the invention, the problems of back corrosion risk, effective area loss and tedious process in the existing method are solved, full-size manufacturing is realized, the cell performance is improved, and industrialization is easier.

The invention relates to the technical field of quantum information devices, and particularly discloses a fullerene Y3N-C80-based probability bit device and a preparation method thereof.The probability bit device comprises fullerene Y3N-C80 molecules, graphene point electrodes, a metal electrode and a substrate, the fullerene Y3N-C80 molecules are connected to the two graphene point electrodes, the graphene point electrodes are connected to the metal electrode, and the metal electrode is connected to the substrate. The graphene point electrode and the metal electrode are located on the substrate, and the fullerene Y3NatC80 molecules are connected with the graphene point electrode through amide covalent bonds. According to the invention, the electric dipole moment is driven to overturn under the condition that different transverse source-drain bias voltages are applied to the probability bit device, so that the probability bit device can present different conductive states, the time proportion of the conductive states can be adjusted according to the magnitude of the applied transverse source-drain bias voltages, and the purpose of regulating and controlling the single-molecule probability bit device is achieved.

The invention discloses a perovskite solar cell module based on insulation layer protection and a packaging process optimization method thereof, through adding an insulation protection layer on the surface of a metal electrode layer and combining a specific deposition process and a packaging process, the risk of short circuit is effectively avoided, and the stability of the cell module is improved at the same time. The perovskite solar cell module sequentially comprises a glass substrate, a transparent conductive oxide layer, a first functional layer, a perovskite layer, a second functional layer, a metal electrode layer, an insulating layer, an adhesive film and a packaging cover plate from bottom to top, and efficient packaging is realized by optimizing laser scribing and insulating layer deposition processes. According to the invention, the long-term stability and the electrical performance of the perovskite assembly are obviously improved, and the perovskite assembly has a wide application prospect.

The invention relates to the technical field of vacuum measurement, in particular to a multi-sealing-cavity MEMS capacitor thin film vacuum gauge, and is characterized in that a silicon substrate is arranged above substrate glass and is bonded with the substrate glass; a pressure sensing film is obtained in the middle of the silicon substrate in a photoetching and dry etching mode; a fixed metal electrode is obtained in the middle of the substrate glass in a photoetching and sputter coating mode; a capacitance gap is formed between the fixed metal electrode and the pressure sensing film; photoetching and corroding the silicon substrate, forming a working sealing cavity above the pressure sensing film, and respectively forming a first cavity and a second cavity above two sides of the pressure sensing film; getter blocks are arranged in the first chamber and the second chamber; and the sealing glass is arranged above the silicon substrate. On the premise that the size of the vacuum gauge is not obviously increased, the multiple chambers are arranged to form the sealing cavity, the air suction capacity is improved, high vacuum obtaining and long-term maintaining performance of the sealing cavity of the vacuum gauge are ensured, and the long-term stability of the vacuum gauge is greatly improved.

The invention discloses a near-infrared flexible polarized photoelectric detector and a preparation method thereof. The photoelectric detector comprises an Sb2Se3 micron wire, a PET flexible substrate, a metal Ag electrode, a silver wire and polydimethylsiloxane (a PDMS mixture). According to the preparation method, an effective metal-semiconductor-metal (M-S-M) structure is constructed by combining the Sb2Se3 micron wire and the Ag electrode, curing packaging is carried out by adopting a PDMS mixture, the incident light transmittance is improved, meanwhile, the response speed of a device can be greatly improved through ohmic contact formed by the micron wire and the Ag electrode, and the power loss of the device is remarkably reduced. Compared with the prior art, the detector provided by the invention still keeps a stable and high extinction ratio under mechanical bending deformation, and realizes sensitive polarization, quick response and stable performance of a near-infrared band at the same time.

The invention relates to the technical field of metal electrodes, and discloses a metal electrode, a preparation method and an optoelectronic device. The invention discloses a preparation method of a metal electrode. The preparation method comprises the following steps: S1, preparing a mask layer on a substrate of which the surface is covered with a transparent conductive film; s2, performing laser grooving on the surface of the mask layer to expose the metal seed layer; s3, a metal conducting layer is prepared on the metal seed layer through electroplating, and a metal electrode is obtained; wherein the substrate is selected from one of glass, a flexible material, ceramic, metal, a wafer and mica. The preparation method of the metal electrode provided by the invention is short in process, simple to operate, wide in mask layer selection range, strong in electrode adhesion, high in electrode processing precision, high in designability, simple in electroplating mode, strong in electroplating liquid adaptability, low in cost and high in production efficiency, and the corrosion resistance of the transparent conductive film can be improved.

The invention discloses a passivation contact type back contact solar cell and a preparation method thereof, the cell comprises a crystalline silicon substrate, the front surface of the crystalline silicon substrate is a passivation anti-reflection layer, and the back surface of the crystalline silicon substrate is sequentially provided with a first tunneling layer, a first polycrystalline silicon layer, a second tunneling layer, a second polycrystalline silicon layer, a passivation layer and a metal electrode from inside to outside, the first polycrystalline silicon layer comprises a first n + polycrystalline silicon region, a first p + polycrystalline silicon region and a first isolation region, the second polycrystalline silicon layer comprises a second n + polycrystalline silicon region, a second p + polycrystalline silicon region and a second isolation region, and the doping concentration of boron in the first p + polycrystalline silicon region is lower than that of boron in the second p + polycrystalline silicon region; the doping concentration of phosphorus in the first n + polycrystalline silicon region is lower than the doping concentration of phosphorus in the second n + polycrystalline silicon region. A double-layer tunneling polycrystalline silicon structure is adopted on the back face of the cell, and low metal contact compounding, low non-metal contact area compounding and low contact resistivity can be met at the same time.

The present invention relates to the technical field of solar cell packaging, and in particular, to a packaging layer structure of a perovskite solar cell module and a packaging method therefor. The packaging layer structure is obtained by means of a vapor deposition method, has a simple process flow, is easy to manufacture, and reduces the production costs. The uppermost second inorganic layer of a perovskite solar cell module achieves the effect of blocking oxygen, and a protection layer between the second inorganic layer and a metal electrode layer achieves the effect of protecting the structure and efficiency of a device. A first inorganic layer is provided between an electron transport layer and the metal electrode layer, so as to inhibit the increase in the defect state density and non-radiative recombination caused by internal ion migration, thereby increasing an open-circuit voltage, and thus playing a positive role in improving the energy conversion efficiency of the perovskite solar cell module, and also blocking water. In addition, for a perovskite cell module packaged using the packaging method provided in the present invention, the stability of water and oxygen is greatly improved, and the working stability of the perovskite cell module is also improved.

The invention discloses a preparation method of a bottom cell of a perovskite / crystalline silicon laminated solar cell, which comprises the following steps of: providing a bottom cell precursor with a surface heavily doped silicon layer and / or an emitter layer exposed, and depositing a hydrogen-rich metal oxide layer on the front surface or double surfaces of the bottom cell precursor by adopting an ALD (Atomic Layer Deposition) method; depositing a hydrogen injection passivation layer on the emitter layer on the back surface of the bottom cell precursor by adopting a PECVD method; printing low-aluminum-content silver paste on the hydrogen injection passivation layer to obtain a metal electrode grid line, and drying, shaping and slightly sintering the metal electrode grid line; and placing the lightly sintered bottom cell precursor in LECO equipment, and carrying out single-sided LECO treatment on a back metal electrode of the bottom cell to obtain the bottom cell. The preparation method is simple, streamline production is easy, the bottom cell precursor does not need to be additionally processed, the bottom cell precursor on a production line can be cut out for back metal electrode preparation and subsequent single-side LECO processing, and preparation and removal of a front metal electrode of the bottom cell are not needed.

The invention discloses a memristor based on a covalent organic framework and a preparation method and application thereof.The memristor comprises a substrate, a semiconductor electrode, a covalent organic framework film and a metal electrode which are sequentially arranged in a stacked mode, and the covalent organic framework film is composed of 1, 3, 4, 5, 6, 7, 8, 8, 9, 10, 11, 12, 13, 14, 16, 17, 17, 17, 17, 17, 17, 17, 17, the catalyst is prepared by condensing 1, 3, 5-tri (4-aminophenyl) benzene and terephthalaldehyde or terephthalaldehyde with an alkyl or alkoxy side chain. The covalent organic framework film has a highly ordered structure and an adjustable porous structure, the preparation process is simple, the film thickness is uniform, the flatness and the crystallinity are high, and the dielectric property is adjusted, so that the switching voltage and the cycling stability of the memristor are adjusted, and the memristor has stable and repeatable switching performance; the COFs-based memristor has high on / off ratio, low device variability and high flexibility, can be used for preparing the COFs-based memristor, can provide technical support for neuromorphic devices with high efficiency, adjustability, structure adjustability and rich functions, and can be applied to the field of intelligent sensing and autonomous system control such as an auxiliary driving system.

The invention discloses a multi-modal sensory artificial synaptic device based on a framework material and a preparation method and application thereof. The artificial synaptic device comprises a substrate and a channel, wherein the channel is arranged on the surface of the substrate; the channel is an amorphous organic metal framework film which responds to light and gas stimulation; the metal electrode is arranged on the surface of the channel; the metal electrode comprises a source electrode and a drain electrode. Compared with the prior art, the framework material with excellent photoelectric response performance is adopted, and a novel artificial synapse device with multi-mode sensing ability is constructed by fully utilizing the regular pore structure, large specific surface area and good photoresponse characteristic of the MOF material. The two electrodes of the device are connected into electrical test equipment, the conductivity of the amorphous MOF thin film can be changed under the stimulation of optical pulse signals, and finally simulation based on photoresponse synaptic plasticity is achieved. The device is placed in different gas environments, and the conductivity of the MOF film can be changed by capturing and releasing target gas molecules through the porous characteristic of the amorphous MOF material, so that simulation based on gas response synaptic plasticity is realized.