Power conversion device (1) with a high-potential line (11H) and a low-potential line (11L), an upper
branch semiconductor device (2H) connected to the
high potential line, a sub-
branch semiconductor device (2L) connected in series with the upper-
branch semiconductor device (2H) and connected to the low-potential line, and a
capacitor (3) which is connected between the
high potential line and the low potential line, wherein from the upper branch
semiconductor device and the lower branch
semiconductor device connected in series, the upper branch
semiconductor device forms a parallel circuit body (20) configured from two or more switching elements (2) connected in parallel to each other, and / or the lower branch semiconductor device forms a parallel circuit body (20) configured from two or more switching elements (2) connected in parallel to each other, in the upper branch semiconductor device and the Sub-branch semiconductor device connected in series, a return flow element (21) in the parallel circuit body is provided to allow current flow from a low-potential line side to a high-potential line side, The switching elements that form the parallel circuit body are controlled in such a way that the switching-off times are different from each other. a last-off element (22) that switches off last, and a non-last-off element (23) as the other element among the switching elements that form the parallel circuit body, an
inductance of a closed last-off circuit (101) in which current flows through the last-off element, the return element in an opposite branch opposite to the last-off element, and the
capacitor, is smaller than the
inductance of a closed non-last-off circuit (102) in which current flows through the non-last-off element connected in parallel to the last-off element, the return element in an opposite branch opposite to the last-off element, and the
capacitor, wherein the parallel body of the upper branch semiconductor device comprises the last-off element, the non-last-off element and the return element, and the parallel body of the lower branch semiconductor device comprises the last-off element, the non-last-off element and the return element, the last-off element, the non-last-off element and the
reflux element in the upper-branch semiconductor device are mounted on a common upper-branch module (50H) as a single common semiconductor device, and the last-off element, the non-last-off element and the
reflux element in the sub-branch semiconductor device are mounted on a common sub-branch module (50L) as a single common semiconductor device, the common upper branch module and the common lower branch module are each configured such that two power connections (551, 552) project from a module body (550), and the
inductance of a wiring path in the module body that connects the power terminals via the last-off element is smaller than the inductance of a wiring path in the module body that connects the power terminals via the non-last-off element, wherein the common upper branch module and the common lower branch module are configured such that the two power terminals project from the module body in the same direction, and a center position (C) in a base section of the two power terminals is closer to the last-off element than to the non-last-off element in a direction in which the last-off element and the non-last-off element are arranged.