6745results about "Efficient power electronics conversion" patented technology

The invention relates to the technical field of power electronics, and discloses a soft switch of a high-frequency switch transformer and a distributed control method and system thereof, and the method comprises the steps: achieving the precise synchronization of nodes through the construction of a ring topology network, combining the monitoring of multiple physical quantities with the collaborative optimization of parameters, dynamically adjusting the parameters of a resonant network and a driving time sequence, and achieving the precise synchronization of the nodes. A zero-voltage switching state is maintained, and electromagnetic interference is suppressed by adopting the composite optimization model; the system comprises a network initialization module, a multi-physical-quantity monitoring module, a space-time synchronization control module, a resonance parameter adjustment module, an electromagnetic optimization decision module, a dynamic adjustment module and a parameter evolution module. The stability of the soft switch is improved through a distributed network and time-space synchronization, and the loss is reduced by adopting a dynamic optimization algorithm; constructing an electromagnetic interference optimization model to enhance compatibility; performing multi-parameter fusion and weight distribution to optimize dynamic response; the reliability is improved through a high-precision protocol and coevolution; and the tensor product framework realizes multi-dimensional intelligent cooperative control.

The invention provides a temperature compensation method and device for a silicon carbide MOS drive control chip, and the method comprises the steps: obtaining a junction temperature-electrical parameter set of a silicon carbide MOS, and carrying out the thermoelectric coupling simulation modeling processing of a junction temperature-electrical parameter mapping data set, and obtaining three-dimensional temperature-efficiency characteristic data; performing real-time parameter analysis and dynamic execution on the three-dimensional temperature-efficiency characteristic data to obtain an optimized switching characteristic waveform; extracting the optimized switching characteristic waveform frequency domain characteristics, and generating a dynamic frequency modulation parameter; and performing dead time iterative optimization on the dynamic frequency modulation parameters to obtain a control parameter combination of the silicon carbide MOS.

The invention relates to a PFC-PWM (Pulse Width Modulation) dual-mode control method for a high-voltage direct-current power supply with a wide output voltage range. The output current of the high-voltage direct-current power supply is detected in real time, the critical threshold value of the load impedance is mapped into the hysteresis interval of the output current, the theoretical boundary of mode switching is obtained, and the control mode is dynamically adjusted. In order to further guarantee smooth switching of the two control modes, hysteresis control logic is designed, and undisturbed smooth switching of the PFM mode and the PWM mode is achieved. Based on an energy equivalence principle and a frequency consistency constraint of a critical load SWL working point, a current threshold criterion and a parameter pre-synchronization strategy are constructed, seamless connection of a mode switching process in a frequency domain and an energy domain is ensured, a transient oscillation risk is remarkably reduced, and a guarantee is provided for continuous and stable output of a full-range load working condition.

In a circuit element 10a, resonant circuits are arranged in parallel. A resonant capacitor Crkq of a q-th resonant circuit arranged in parallel has one end connected in series to a resonance reactor Lrq and a primary winding N1q of a transformer Trq. The resonant capacitor Crkq of the q-th resonance circuit arranged in parallel has another end connected to the resonant capacitor Crkq of a q-th one of the resonance circuit arranged in parallel in another one of the circuit elements 10a so that a k-dimensional multiphase LLC converter having a phase difference of 360° / Pk is constructed by Pk circuit elements.

A multi-phase LLC resonant converter circuit (10) includes: first to third LLC resonant converters each including a series circuit (S1 to S3) of a first switch and a second switch that are connected in parallel to a DC power supply, a high-frequency transformer (T1 to T3) including a primary-side winding and a secondary-side winding, a resonant circuit including a resonant reactor (Lr1 to Lr3) connected between a connection point of the first switch and the second switch and one end of the primary-side winding, a resonant capacitor (Cr1 to Cr3) in which one end is connected to the other end of the primary-side winding, and a divided resonant capacitor (Cn1 to Cn3) in which one end is connected to a connection point of the primary-side winding and the resonant capacitor; a first neutral line (N1) that connects the other end of the resonant capacitor; a neutral line reactor (Ln) connected between the first neutral line and a power supply line of the DC power supply; and a second neutral line (N2) that connects the other end of the divided resonant capacitor.

A resonant converter switching between different operational state modes is provided. The resonant converter includes a first transistor, a second transistor, a control circuit, a resonant circuit, a transformer and an output stage circuit. A first terminal of the first transistor and a second terminal of the second transistor are connected to positive and negative terminals of an input voltage source, respectively. A first terminal of the second transistor is connected to a second terminal of the first transistor. The resonant circuit is connected to the second terminal of the first transistor and the transformer. The transformer is connected to a load through the output stage circuit. The control circuit modulates frequencies or duty cycles of conduction time control signals that are outputted to the first and second transistors to different values for switching the resonant converter between the operational state modes.

The invention relates to the technical field of converter starting, in particular to an LLC full-bridge converter hybrid control soft start method, comprising the following steps: selecting a hybrid soft start strategy combining down-conversion starting and PWM starting, and respectively introducing nonlinear orders of a control switch frequency decline curve in the down-conversion starting process and a duty ratio rise curve in the PWM starting process; defining a mathematical formula of the change of the switching frequency and the duty ratio along with time when two nonlinear orders are different in value; establishing a simulation model, and substituting a mathematical formula that the switching frequency and the duty ratio change along with time when the two nonlinear orders are different in value into the simulation model; performing simulation testing on the nonlinear orders with different values, extracting the maximum resonance current, and determining an order combination with the best maximum resonance current suppression effect; and performing soft start of the LLC full-bridge converter based on the determined order combination. According to the invention, the current in the soft start process can be effectively suppressed, and meanwhile, quick start and device safety are considered.

A power switching device is disclosed. The power switching device includes a cascode switching circuit comprising a normally-on transistor and a normally-off transistor provided in a cascode topology. The power switching device also includes a gate driver circuit configured to apply a positive bias voltage at a respective gate terminal of the normally-on transistor under a normal operating condition, and to apply a negative bias voltage at the respective gate terminal of the normally-on transistor under a short circuit condition.

Provided is a resonant converter capable of adaptively tuning a quality factor based on load. The resonant converter includes a resonant tank having an inductor part whose inductance is tunable according to a first control potential, a magnetizing inductor, and a capacitor part whose capacitance is tunable according to a second control potential. The resonant converter detects the rectifying current of its output stage for responding to the load state of the resonant converter. The resonant converter outputs the first and second control potentials in response to the load state, tuning the equivalent inductance of the inductor part, the equivalent capacitance of the capacitor part, or both, thereby changing the quality factor of the resonant converter.

The invention relates to the technical field of chip encryption, in particular to an E-type effect amplifier electromagnetic heating method and system based on gallium nitride. The real-time resistance correction value is calculated by acquiring the real-time resistance data and the real-time temperature data and combining the working characteristic information and the ideal parameter information of the gallium nitride device, so that the temperature change of the gallium nitride device can be quickly responded, and then the resistance division subset and the temperature division subset are respectively acquired; a plurality of temperature-resistance correlation groups are obtained after permutation and combination, a data basis is provided for establishing a working voltage prediction model, then the working voltage prediction model is trained through historical data, and finally a real-time resistance correction value and a real-time temperature value are input into the corresponding working voltage prediction model to obtain a working voltage simulation value. And a circuit where the gallium nitride device is located is adjusted according to the working voltage analog value, so that the working voltage and the working current of the gallium nitride device are close to ideal values, and stable power output of the device is ensured.

The invention discloses a multi-objective optimization method and system for dual active bridge circuit expansion phase shift modulation, and the method comprises the steps: calculating a voltage matching ratio, and determining an external phase shift angle ratio based on a difference value between an output voltage and an output voltage reference value; according to the voltage matching ratio and the external phase shift angle ratio, obtaining an internal phase shift angle ratio of the primary side full bridge through an offline lookup table; calculating the maximum transmission power of the dual-active bridge converter, and determining a current working mode from the six preset working modes based on the size relationship between the inner phase shift angle ratio and the outer phase shift angle ratio; generating an optimal modulation strategy through a multi-objective optimization algorithm by taking the current effective value and the current peak value as optimization objectives and combining the voltage matching ratio and the periodic parameters of the current working mode; and generating a trigger signal of each switch tube of the dual-active bridge converter. Through six-mode working area division, complete differential algorithm boundary constraint and off-line-on-line collaborative optimization, the contradiction between the current stress and the soft switching range of the converter under extended phase shift modulation is solved.

The invention discloses a bridge arm multiplexing type soft switching AC-DC converter and a control circuit and a control method thereof, and the bridge arm multiplexing type soft switching AC-DC converter carries out bridge arm multiplexing on a primary side switching tube of a full-bridge LLC resonant converter and a rear bridge arm switching tube of a bridgeless AC-DC converter. Power factor correction and soft switching of all switching tubes can be realized, and the number of devices is reduced. The control circuit comprises an output voltage regulating circuit, an input voltage regulating circuit, an output voltage controlled phase-shift clock generating circuit, an input voltage controlled phase-shift clock generating circuit and a switching signal gating circuit. According to the invention, global soft switching, electrical isolation and wide-range voltage regulation can be realized, the number of devices is effectively reduced, and high power density, high conversion efficiency and high reliability can be realized.

The invention discloses a TCM-mode-based Si-SiC hybrid power multi-phase staggered H-bridge converter structure and a control method thereof, according to the scheme, a three-phase staggered parallel topology of a two-phase low-frequency Si-IGBT bridge arm and a one-phase high-frequency SiC-MOSFET bridge arm is adopted, and a TCM control strategy is combined, so that zero voltage switching (ZVS) of a Si device is successfully realized, the switching loss is remarkably reduced, and the switching efficiency is improved. The system efficiency is greatly improved; and meanwhile, through pilot frequency interleaving and ripple compensation technologies, total output current ripples are greatly reduced, and optimal balance between system performance and manufacturing cost is realized while the power capacity of the converter is remarkably expanded and the dynamic response speed and the output electric energy quality are improved.

The power supply conversion circuit includes an isolation transformer, and the isolation transformer includes at least two primary coils and at least one secondary coil. Each primary coil is connected to a half-bridge circuit by using a first resonant network, and half-bridge circuits corresponding to the at least two primary coils are connected in series between two electrodes of a power supply. The half-bridge circuit is connected in parallel to a voltage divider, the voltage divider includes a first capacitor and a second capacitor that are connected in series, a first terminal of the first resonant network is connected to an intermediate node of the half-bridge circuit, and a second terminal of the first resonant network is connected to a connection point between the first capacitor and the second capacitor.

The invention discloses a junction temperature prediction method based on SiC MOSFET turn-off loss, and belongs to the technical field of power electronics and electricians. The junction temperature prediction method combines a turn-off loss model with a junction temperature prediction model based on turn-off loss, and comprises the following steps: firstly, establishing a SiC MOSFET turn-off loss model considering parasitic parameters, secondly, establishing the junction temperature prediction model based on the SiC MOSFET turn-off loss in an off-line manner, and then, calculating the turn-off loss on line according to the loss model. And finally substituting the loss data into the junction temperature prediction model to obtain a junction temperature prediction value. According to the method, the turn-off loss and the junction temperature of the SiC MOSFET under different working conditions can be predicted, and the method has the advantages of being high in real-time performance, easy to implement, high in model precision and the like; and an efficient and accurate solution is provided for thermal evaluation and junction temperature prediction of the silicon carbide power device.

A power converter topology, comprising: a cascade connection of a first converter stage and a second converter stage; wherein the first converter stage comprises a current mode controlled pulse width modulation (PWM) converter having one or more pairs of switches forming a first switching bridge and an inductor connected to the output of the first switching bridge, the switching bridge generating a voltage Vlink; and wherein the second converter stage is a resonant converter having a switching stage having one or more pairs of switches forming a second switching bridge across the voltage Vlink generated by the first converter stage and a resonant tank connected to the output of the second switching bridge, to generate a resonator output voltage; the topology further comprising a transformer to transform the resonator output voltage to a transformed output voltage and a rectifier to rectify the transformed output voltage to an output voltage Vout, and wherein the duty cycle of the first switching bridge is varied according to a voltage derived from the value of the output voltage Vout, and wherein the duty cycle of the second switching bridge is fixed at 50:50.

A control circuit for an asymmetrical half-bridge flyback converter with a first switch, a second switch, a transformer and a resonant capacitor is provided. The control circuit includes an input terminal and an output terminal. The input terminal receives resonant current information. The resonant current information is associated with a resonant current flowing through a resonant tank formed by a primary winding of the transformer and a resonant capacitor. The output terminal provides a first control signal to turn off the first switch of the asymmetrical half-bridge flyback converter based on the resonant current information.

The invention discloses a wide-gain-range LLC resonant converter based on a variable voltage doubling rectifying structure, and belongs to the technical field of power electronic conversion. The converter comprises a primary side direct-current voltage input, a primary side full-bridge inversion structure, a resonant tank, a secondary side variable voltage doubling rectifying structure and an output load, the primary side full-bridge inversion structure comprises a left bridge arm and a right bridge arm which are formed by a switching tube Q1, a switching tube Q2, a switching tube Q3 and a switching tube Q4, and the resonant tank comprises a resonant inductor Lr, a resonant capacitor Cr and a transformer T; the secondary side variable voltage-multiplying rectifying structure comprises a diode D1, a diode D2, a diode D3, a diode D4, a diode D5, a diode D6, a switching tube Q5, a switching tube Q6, a switching tube Q7, a voltage-multiplying capacitor Cd1, a voltage-multiplying capacitor Cd2, an output capacitor Co1 and an output capacitor Co2. According to the invention, no extra resonant element is needed, the voltage gain range can be widened, the full-range working efficiency is improved, and new energy scene requirements are met.

A power converter includes a transformer, a resonant circuit, a first switch and a second switch, a resonant adjustment circuit, and a controller. The transformer includes a primary-side winding and a secondary-side winding coupled to the primary-side winding. The resonant circuit is coupled to the primary-side winding, and the resonant circuit includes a resonant capacitor and a resonant inductor provided by at least the primary-side winding. The first switch and the second switch are commonly connected to a node, and the node is coupled to the resonant circuit. The resonant adjustment circuit is coupled to the resonant circuit. The controller is used to control an enabled time of the resonant adjustment circuit according to an output voltage of the power converter so as to maintain the efficiency of transmitting the energy from the primary-side winding to the secondary-side winding under a full output voltage range.

A two-transistor flyback topology in which a portion of leakage inductance energy in the transformer is extracted and used to obtain zero voltage switching on both switching elements in any operating conditions, and in which a third low power switch eliminates parasitic oscillations and allows an operation at a determined frequency. In this topology, there are no switching losses and there are no spikes or glitches in any switching node, eliminating the need for snubbers. This topology is an “ideal two transistor flyback topology.”

The invention provides a secondary ultrahigh-gain DC-DC converter based on a coupling inductor. The DC-DC converter comprises capacitors Co, C1, C2, C3 and C4, diodes Do, D1, D2, D3 and D4, power switch tubes S1 and S2, an input inductor L1, and a three-winding coupling inductor formed by equivalently forming an excitation inductor Lm, a leakage inductor Lk, a primary winding N1, a secondary winding N2 and a secondary winding N3. According to the converter, the three-winding coupling inductor and voltage-multiplying unit technology is fused, the secondary booster circuit is embedded, compared with an existing high-gain converter, the converter can obtain high voltage gain under the low turn ratio condition, the problems of high winding equivalent series resistance and large leakage inductance caused by the high turn ratio are solved, and the reliability of the converter is improved. Meanwhile, a relatively large duty ratio is avoided; due to the continuity of the input current and the common-ground characteristic between the input power supply and the load, the converter is suitable for renewable energy source application; in addition, the converter realizes high voltage gain, and meanwhile, the voltage stress on the power device is low.

The invention provides a power factor correction method and system for AC-DC conversion of a server power supply, and relates to the technical field of server power supplies, and the method comprises the steps: collecting an input AC signal and a DC bus output signal, calculating a real-time power factor value, constructing a compensation function based on the power factor value, and calculating a deviation value; and generating a compensation parameter matrix through recursive calculation, processing a direct current output signal by adopting an adaptive filtering algorithm, fusing the direct current output signal with the compensation parameter matrix, calculating to obtain a current adjusting signal and a duty ratio adjusting signal, and accurately adjusting a power factor.

This disclosure describes a non-dissipative snubber circuit configured to boost a voltage applied to a load after the load's impedance rises rapidly. The voltage boost can thereby cause more rapid current ramping after a decrease in power delivery to the load which results from the load impedance rise. In particular, the snubber can comprise a combination of a capacitive element, two inductive elements, and three switches, where a duty cycle of two of the three switches controls the voltage boost. The snubber can be arranged between a DC power supply and a switching circuit configured to generate a pulsed waveform for provision to the load.

The invention relates to an electromagnetic interference suppression method and device based on high-frequency GaN switching characteristics. The method comprises: in a power conversion circuit constructed based on a GaN switching device, edge analysis processing is performed on a driving signal of the GaN switching device to obtain edge feature data, and the edge feature data comprises a rising edge change rate and a falling edge change rate in a plurality of continuous switching periods; determining an equivalent network model constructed based on parasitic parameters in the power conversion circuit, and performing frequency domain response calculation on the equivalent network model according to the edge feature data, interference frequency band distribution information caused by the edge change is obtained, analysis processing based on spectrum energy adjustment is carried out on a driving signal of the GaN switching device according to the interference frequency band distribution information, and an adjustment control instruction used for restraining key frequency band interference is obtained. By adopting the method, an effective suppression strategy oriented to a specific interference frequency band can be realized.

A resonant capacitor Crk (k is a natural number of one to n) of each circuit element has one end connected in series to a resonant reactor Lr and a primary winding N1 of a transformer T, and another end connected to the resonant capacitor Crk of another circuit element 10 so that a dimensional multiphase LLC converter having a phase difference of 360° / Pk is constructed by Pk (Pk is an optional natural number) of the circuit elements 10.

The embodiment of the invention provides a high-voltage starting and discharging control circuit and a switching power supply with the high-voltage starting and discharging control circuit, and the high-voltage starting and discharging control circuit comprises a high-voltage starting circuit, a power failure detection circuit and an X capacitor discharging circuit. Wherein the high-voltage starting circuit is used for providing a voltage required by working for a system through an input voltage until the system works normally when the system is in a power-on stage or when an external VCC voltage does not reach a starting threshold value of a system control chip; the power failure detection circuit is used for detecting the output voltage of the high-voltage clamping circuit in real time and judging whether the input end of the switching power supply is powered down or not according to the voltage; when judging that the input end of the switching power supply is powered down, outputting a discharge control signal; and the X capacitor discharging circuit responds to the discharging control signal and discharges the X capacitor until the voltage on the X capacitor is lower than a preset threshold value. The starting time of the switching power supply system is saved, and the static power consumption of the system is reduced.

The invention relates to the technical field of direct-current power supplies, in particular to a silicon carbide material-based high-power synchronous rectification direct-current power supply and a control method thereof, and the silicon carbide material-based high-power synchronous rectification direct-current power supply comprises an input filtering module, a high-frequency inversion module, a synchronous rectification module, an output filtering module and a control module; the output end of the high-frequency inversion module is connected with the input end of the synchronous rectification module, and the high-frequency inversion module is composed of a full-bridge inversion circuit composed of SiC MOSFETs. The output end of the synchronous rectification module is connected with the input end of the output filtering module, and the synchronous rectification module comprises a topological structure in which a SiC Schottky diode and a SiC MOSFET are connected in parallel; and the control module is in signal connection with the high-frequency inversion module and the synchronous rectification module, acquires input voltage, output voltage, current and temperature parameters in real time, and controls the on-off state of each module through a driving signal. The invention has the effects of effectively reducing the power supply energy loss and improving the power supply efficiency.

Disclosed is an electronic circuit. The electronic circuit includes a first transistor device, a second transistor device, and a third transistor device, each having a control node and a load path. The electronic circuit further includes a drive circuit. The load paths of the first and second transistor devices are connected in parallel, the load path of the third transistor device is connected in series with the load paths of the first and second transistor devices, and the first transistor device and the second transistor device are integrated in a common semiconductor body. The drive circuit is configured, based on a control signal, to successively switch on the first transistor device and the second transistor device, so that the second transistor device is switched on when the first transistor device is in an on-state.

An electronic component. The electronic component includes a base; a first semiconductor device attached to the base and having: a first Gallium nitride (GaN)-based switch having a first gate, a first source and a first drain, the first gate arranged to control a current flow between the first source and the first drain; a second GaN-based switch having a second source, a second gate and a second drain, the second gate coupled to the first gate, and the second drain coupled to the first drain. In one aspect, the electronic component also includes a second semiconductor device attached to the base and having: a logic circuit coupled to the second source and arranged to detect a magnitude of the current flow; and a driver circuit coupled to the first and second gates, the driver circuit arranged to control on and off states of the first and second GaN-based switches.

The invention discloses a charge control method and a digital control system based on a dual-active bridge resonant converter, and belongs to the technical field of dual-active bridge resonant converter control. According to the method, a resettable integrating circuit is used for sampling resonance current and converting the resonance current into integrating voltage which is in a linear relation with charge injection quantity, and an integrating capacitor is discharged and reset before each time of injection; superposing the integral voltage and the ramp voltage; comparing the superposed signal with a threshold voltage output by a current loop through a comparator, and when the superposed signal reaches a threshold value, triggering to generate a PWM signal and switching the working mode of the converter; a switching tube is controlled to act according to a PWM signal, a switching time sequence is dynamically adjusted, effective control over transmission power is achieved, and a digital control system for achieving the method is established. According to the method, rapid dynamic response, efficient power transmission and stable operation of the dual-active bridge resonant converter are realized by controlling resonance current integration and a switching time sequence, and the energy conversion efficiency and the system reliability are effectively improved.