An interconnect structure and method for fabricating the interconnect structure having enhanced performance and reliability, by minimizing
oxygen intrusion into a seed layer and an electroplated
copper layer of the interconnect structure, are disclosed. At least one opening in a
dielectric layer is formed. A sacrificial oxidation layer disposed on the
dielectric layer is formed. The sacrificial oxidation layer minimizes
oxygen intrusion into the seed layer and the electroplated
copper layer of the interconnect structure. A barrier
metal layer disposed on the sacrificial oxidation layer is formed. A seed layer disposed on the barrier
metal layer is formed. An electroplated
copper layer disposed on the seed layer is formed. A planarized surface is formed, wherein a portion of the sacrificial oxidation layer, the barrier
metal layer, the seed layer, and the electroplated copper layer are removed. In addition, a capping layer disposed on the planarized surface is formed.