Semiconductor processing equipment that has increased efficiency,
throughput, and stability, as well as reduced
operating cost,
footprint, and faceprint is provided. Other than during deposition, the
atmosphere of both the
reaction chamber and the transfer chamber are evacuated using the transfer chamber exhaust port, which is located below the surface of the
semiconductor wafer. This configuration prevents particles generated during
wafer transfer or during deposition from adhering to the surface of the
semiconductor wafer. Additionally, by introducing a purge gas into the transfer chamber during deposition, and by using an insulation separating plate 34, the atmospheres of the transfer and reaction chambers can be effectively isolated from each other, thereby preventing deposition on the walls and components of the transfer chamber. Finally, the configuration described herein permits a wafer buffer mechanism to be used with the
semiconductor processing equipment, thereby further increasing
throughput and efficiency.