The embodiment of the invention provides a preparation method of a
semiconductor structure, and the method is characterized in that the method comprises the steps: providing a first
wafer, the first
wafer comprises a plurality of first chips, and first
cutting channels are disposed among the plurality of first chips; a first
dielectric layer, a first groove and a second groove are formed on the first surface of the first
wafer, the first groove and the second groove are located in the first
dielectric layer, a first alignment mark is formed in the first groove, a first
contact pad is formed in the second groove, and the first
contact pad is connected with the first
chip; providing a plurality of second
chip structures, and correspondingly bonding and connecting the second
chip structures with the first chips on the side, provided with the first alignment marks, of the first wafer to form the first
semiconductor structure; a second alignment mark corresponding to the first alignment mark is formed on the to-be-bonded structure; and bonding the first
semiconductor structure with the to-be-bonded
structure based on alignment operation between the first alignment mark and the second alignment mark.