224 results about "Contact formation" patented technology

The invention discloses a high-quality alloy welding wire preparation device, and belongs to the technical field of alloy welding wires, the high-quality alloy welding wire preparation device comprises a base, a moving structure is arranged at the center of the upper end face of the base, an operation table is arranged at the center of the upper end face of a connecting block, and a connecting structure is arranged at the center of the upper end face of the operation table; three auxiliary structures are transversely arranged at the center of the upper end face of the operation table, cutting structures are arranged at the positions, close to the front portions, of the centers of the two side walls of the operation table, and positioning structures are arranged at the centers of the upper end faces of the two first sliding blocks. The clamping device is simple in structure and convenient to operate, prevents deviation from affecting machining precision, achieves reliable fixing of the alloy welding wire, makes contact with the surface of the welding wire to form an upper-layer guide structure and a lower-layer guide structure, ensures that the welding wire keeps linear motion in the clamping and machining process, effectively avoids the problems of cutting errors and the like caused by deviation, and improves welding wire machining precision and stability.

The invention provides a red copper connector and a diffusion welding method thereof, and relates to the technical field of metal welding, the diffusion welding method of the red copper connector comprises the following steps: taking a red copper base material, and performing nanocrystallization treatment on one side surface of the red copper base material through an ion impact method to form a welding surface; the annealed copper middle layer is placed between the two pieces of red copper base metal, the annealed copper middle layer makes contact with the welding face, and a connector to be welded is formed; and the connector to be welded is welded through a pulse current auxiliary diffusion welding method, the red copper connector is obtained, the welding temperature of the pulse current auxiliary diffusion welding method is 300 + / -5 DEG C, the pressure is 18-22 MPa, and the heat preservation time is 25-35 min. And low-temperature, rapid and small-deformation reliable connection of the red copper base metal is achieved.

The present invention provides a display device and a method for manufacturing a display device, which prevent the adhesive layer from overflowing at the outer periphery of the display cell by controlling the amount of transparent optical adhesive that constitutes the adhesive layer formed between the cover plate and the display cell. [Solution] A glass cover plate 20 and an elastomer frame member 10 are formed in close contact using a glass insert in-mold method. A weir portion 14 is formed protruding from the inner surface 14 of the frame member 10, and a weir end surface 14a is formed at the boundary with the inner surface 23 of the cover plate 20. The transparent optical adhesive applied to the inner surface 23 of the cover plate 20 can be blocked by the weir end surface 14a, preventing the adhesive layer 60a from overflowing into area (ii) in order to bond the display cell 30.

A semiconductor device is provided. The semiconductor device includes first transistors positioned over a substrate and arranged along a first row in a first direction substantially parallel to a working surface of the substrate. Second transistors are positioned over the substrate and arranged along a second row in the first direction. Each first transistor is aligned with a respective second transistor in a second direction substantially parallel to the working surface of the substrate. An isolation wall structure is positioned between the first transistors and the second transistors.

Backside and frontside contact structures wrapping around source / drain regions provide increased contact areas for electrical connections and allow increased silicide areas. Sidewall metallization of epitaxially grown source / drain regions provides source / drain sidewall contacts that enable wrap-around contact formation on both the front side and the back side of a semiconductor device layer. Front side and back side contact metallization over the source / drain sidewall contacts allows wrap-around contact structures on both sides of the device layer.

The utility model provides a photovoltaic module ground -connection frame with puncture function relates to photovoltaic support technical field, including frame and puncture subassembly. This photovoltaic module ground -connection frame with puncture function fixes puncture subassembly in the side of frame, makes the sharp of moving plate aim at the contact area of photovoltaic support, ensures that the sharp and support surface preliminary contact. Spring exerts the thrust along the spring axis direction to moving plate because of precompression state, and the sharp punctures the oxide film on the surface of support and contacts with aluminium alloy base material along the vertical groove of outer frame and is pushed to the support direction sliding, and forms the conductive path. With the lapse of time, the aluminium alloy base material of support contact point reacts with air, and when the oxide film is regenerated, the moving plate is manually pushed to slide, the sharp cuts the newly generated oxide film again, maintains the conductive state of contact point, avoids the contact interruption, realizes the continuous puncture of oxide film, ensures that the ground -connection path is long -term stable.

The invention relates to the field of connectors, in particular to a high-speed transmission I / O connector which comprises U-shaped conductive terminals arranged in an array mode, a holder and a packaging shell, the U-shaped conductive terminals are packaged on the inner side of the holder, the two ends of each U-shaped conductive terminal are each provided with a V-shaped elastic contact part, the two V-shaped elastic contact parts correspond to each other, and the U-shaped conductive terminals are arranged in the packaging shell. The high-speed transmission I / O connector is characterized in that a U-shaped conductive terminal is arranged in the holding frame, a wiring part is arranged at the bent position of the U-shaped conductive terminal, the packaging shell comprises a front insertion part and a rear main body part, the rear main body part is packaged on the outer side of the holding frame, and according to the high-speed transmission I / O connector, on one hand, a rubber block on the inner side of a V-shaped elastic contact part is tightly attached to the connecting position of an insertion groove and a containing groove to form a first plug; and on the other hand, the first arc-shaped surface of the V-shaped elastic contact part is in close contact with the second arc-shaped surface of the accommodating groove to form second blocking, so that dust and impurities can be effectively prevented from entering the accommodating groove through double protection, poor contact of the V-shaped elastic contact part caused by accumulation of foreign matters is avoided, and stable contact performance in long-term use is guaranteed.

The present invention relates to the field of electronic manufacturing production, specifically a device for taking and placing integrated circuit chips, including a workbench, on which a placement table and a take and place table are respectively arranged from back to front, and a movable seat is arranged at the rear end of the workbench. The present invention sets a cleaning component, and the cleaning disk, dust extraction ring, high-pressure exhaust pipe and other structures in the cleaning component work together to quickly clean up impurities on the surface of the chip before the suction nozzle rod adsorbs the chip. The high-pressure exhaust pipe in the annular array cooperates with the dust extraction groove at the bottom to fully cover the chip surface, ensuring that as many impurities as possible are sucked away, and the sealing gasket under the cleaning disk contacts the surface of the chip table to form a sealed space. When the total exhaust disk generates negative pressure, a local negative pressure environment is formed, which enhances the concentration of airflow and makes impurities on the chip surface more quickly sucked into the dust extraction groove, further improving the efficiency of cleaning impurities and reducing the risk of impurities clogging the suction nozzle pores.

Disclosed herein are approaches for forming a dynamic random-access memory device (DRAM). One DRAM device may include plurality of pillars extending from a base layer, and a spacer layer formed along just a lower portion of each of the plurality of pillars. The DRAM further includes a body contact and a cap between the plurality of pillars, wherein the body contact is formed over the spacer layer, and a gate formed around the plurality of pillars. The DRAM further includes a bottom source / drain formed in the base layer and a top source / drain formed in each pillar of the plurality of pillars, wherein the top source / drain extends above the gate.

Methods, systems, and devices for divider and contact formation for memory cells are described. In some examples, a protective mask (e.g., a photoresist layer) may be formed over existing circuit structures above a substrate. Contact structures may be exposed when the protective mask is removed. In some examples, the protective mask may be removed using a dry etching operation. In some examples, one or more additional etching operations may be performed to expose (and subsequently fabricate) additional circuit structures.

Methods of forming an integrated circuit devices may include providing first and second active regions, an isolation layer, and first and second sacrificial stack structures. The first and second sacrificial stack structures may contact the first and second active regions, and the first and second sacrificial stack structures may each include a channel layer and a sacrificial layer. The methods may also include forming an etch stop layer on the isolation layer, replacing portions of the first and second sacrificial stack structures with first and second source / drain regions, forming a front contact including a front contact plug, forming a back-side insulator, and forming a back contact plug in the isolation layer and the back-side insulator. At least one of a portion of the front contact plug and a portion of the back contact plug may be in the etch stop layer.

The invention discloses a die and equipment for window hole punching forming of a pipe material clamping bearing retainer. The die comprises a rigid outer ring and an elastic inner ring. A ring-width-adjustable clamping interval is formed between the rigid outer ring and the elastic inner ring, a first annular boss is arranged on the outer wall of the elastic inner ring, a limiting step is machined on the inner wall of the rigid outer ring, and the elastic inner ring has a first working state and a second working state. The ring width size of the clamping section is larger than the wall thickness of the tubular blank with the second annular boss on the inner wall, so that the tubular blank can be conveniently placed into the clamping section; in the second working state, the top face of the first annular boss and the side face of the limiting step abut against the inner surface and the outer surface of the tubular blank correspondingly, the bottom face of the second annular boss of the tubular blank is tightly attached to the bottom face of the first annular boss of the elastic inner ring, and meanwhile the end face of the tubular blank is tightly contacted with the step limiting end face of the rigid outer ring; axial double limiting on the tubular blank is formed, and clamping stability is guaranteed.

The present disclosure relates to an electroplating system including a first contact detection sensor and a second contact detection sensor disposed at a surface of a cone of the electroplating system. The first contact detection sensor detects a first resistance at a first contact between a substrate to be plated by the electroplating system and a first contact pin, the second contact detection sensor detects a second resistance at a second contact between the substrate and a second contact pin. A controller receives the first resistance and the second resistance, and determines the first contact and the second contact are not properly formed when a difference between the first resistance and the second resistance is not within a first predetermined resistance range, or the first resistance or the second resistance is not within a second predetermined resistance range.

The invention relates to a semiconductor power device and a preparation method thereof. The semiconductor power device comprises a substrate, an epitaxial layer, a first grid electrode, a second grid electrode, a first dielectric layer, a second dielectric layer, a polycrystalline silicon region and a source electrode, wherein the material of the substrate comprises silicon carbide; the epitaxial layer comprises a drift region, a well layer, a first groove, a source region and a source contact region; the first groove extends into the drift region from the surface, far away from the substrate, of the epitaxial layer and penetrates through the well layer; the first grid electrode and the second grid electrode are located in the first groove, and the first grid electrode and the second grid electrode are arranged in an isolated mode. The first dielectric layer wraps the first grid electrode, the second dielectric layer wraps the second grid electrode, and the polycrystalline silicon region of the second conduction type is located between the first dielectric layer and the second dielectric layer and is in contact with the drift region to form a heterojunction diode; the source electrode is electrically connected with the second grid electrode to form a transistor of which the local grid electrode and the drain electrode are short-circuited, and the source electrode is also electrically connected with the polycrystalline silicon region. According to the invention, the conduction loss of the third quadrant can be reduced and the switching loss can be significantly reduced.

The application provides a PN diode based on a non-doped single crystal substrate and a preparation method thereof. ‑ a GaN layer, a p + GaN layer and an anode metal layer; wherein the non-doped single crystal structure comprises a non-doped drift layer on a front surface and an ion implantation layer on a back surface, the ion implantation layer is in contact with the cathode metal layer as a substrate of the PN diode, and the non-doped drift layer is in contact with the p ‑ GaN layer to form a PN junction. The PN diode based on the non-doped single crystal substrate and the preparation method thereof have the advantages of simplifying the preparation process, reducing the manufacturing cost, reducing the interface pollution, and improving the electrical performance and long-term reliability of the device.

Approaches herein relate to methods for forming self-aligned backside contacts and metal sidewall contacts in a semiconductor device. One method may include forming a plurality of alternating first layers and second layers atop a base layer, forming a trench in the plurality of alternating first layers and second layers, and forming a source / drain epitaxial layer along a sidewall of the trench. The method may further include forming a recess in the base layer by extending the trench into the base layer following formation of the source / drain epitaxial layer, filling the recess with a temporary material, and performing an implant by directing ions to the source / drain epitaxial layer after filling the recess with the temporary material, wherein the implant increases an ion concentration along an outer surface of the source / drain epitaxial layer.

This application provides a chip and its fabrication method, an RF power amplifier, and a terminal, relating to the field of semiconductor technology, which can ensure sufficient contact between the epitaxial layer and the source conductive layer. The chip includes a first transistor and a second transistor. The method includes: forming an epitaxial layer (11) and a source conductive layer (21) sequentially stacked on a substrate (10); the epitaxial layer includes a first via to form a first epitaxial layer (101) of the first transistor and a second epitaxial layer (102) of the second transistor. The source conductive layer includes a first source (211) of the first transistor and a second source (212) of the second transistor. The edge of the first source (211) is flush with the edge of the first epitaxial layer (101) near the first via, and the edge of the second source (212) is flush with the edge of the second epitaxial layer (102) near the first via. A first conductive layer (13) is formed in the first through hole; the first conductive layer (13) is in contact with the first source electrode (211) and the second source electrode (212); a second through hole is formed; a second conductive layer (14) is formed in the second through hole, the second conductive layer (14) is in contact with the first conductive layer (13) and is grounded.

The pipe joint includes a flare joint body 1F, a cap nut 2, and a stop ring 3. A curved pressure-contacting slope surface 32 of the stop ring 3 contacts a slope surface 5 with reduced-diameter tip of the flare joint body 1F under pressure to establish sealing by means of mutual contact between metallic surfaces. The pipe P is grasped in a tightly pressure-contacting state using a back tooth and a front tooth formed at a tip head 37 of a substantially cylindrical thin part 35 of the stop ring 3.

The present disclosure relates to a method for determining at least one of a first contact resistance and a second contact resistance of a two-wire Kelvin connection, the two-wire Kelvin connection being formed by contact of first and second measurement paths of a test device with a DUT. The method includes providing a predetermined measurement current to the DUT via a first measurement path during a first measurement in which the first and second measurement paths are coupled to the DUT, measuring a first voltage at an input node of an internal circuitry of the DUT to which the first and second measurement paths are coupled; at least one of a second measurement and a third measurement, the second measurement comprising providing a predetermined measurement current to the DUT via a first measurement path, measuring a second voltage at a first node of the first measurement path, and the third measurement comprising providing a predetermined measurement current to the DUT via a second measurement path, measuring a third voltage at a second node of the second measurement path; at least one of the first CRES and the second CRES is determined.

The utility model discloses a grinding type photoelectric connector in the related technical field of photoelectric connectors, which comprises a shell and a gland matched with the shell, the two sides of the middle of the shell are symmetrically provided with running fit flanges, the two sides of one end of the shell are symmetrically provided with locking clamping blocks, and the locking clamping blocks are matched with the running fit flanges. A rotary connecting end is arranged at one end of the gland, rotary matching holes are formed in the two sides of the rotary connecting end, and a locking clamping groove is formed in the end, away from the rotary matching holes, of the outer side of the gland. The lead contact end is arranged at the end of the copper sheet, the lead stripping fixing teeth are arranged at the position, matched with the lead contact end, of the top of the inner side of the gland, and in the process that the gland is turned over and pressed downwards, the lead stripping fixing teeth are matched with the lead contact end, so that a protective layer of a lead can be pressed and damaged, and the service life of the lead is prolonged. The metal core in the wire is effectively contacted with the contact end of the wire to form a path, a tool is not needed to remove the wire skin, and the connection efficiency is effectively improved.

An electromagnetic relay comprises a shell, an electromagnet, a movable armature, a movable contact assembly and a fixed contact assembly, the movable contact assembly is provided with a first contact plate and a second contact plate, the first contact plate is provided with a first movable contact and a second movable contact, and the second contact plate is provided with a third movable contact and a fourth movable contact; the fixed contact assembly is provided with first to fourth terminal plates which are not contacted with each other; the parts of the first and second terminal plates outside the housing correspond to the first contact plate, and the parts of the third and fourth terminal plates outside the housing correspond to the second contact plate. A first fixed contact of the first to fourth terminal plates in the shell corresponds to a first movable contact, a fourth fixed contact corresponds to a fourth movable contact, a third fixed contact corresponds to a second movable contact, a second fixed contact corresponds to a third movable contact, and the second and third terminal plates are arranged in the shell in a staggered manner; the movable contact assembly is driven by the movable armature to enable the first to fourth movable contacts to be in contact with or not to be in contact with the corresponding first to fourth fixed contacts, thereby forming a parallel current path.

To improve the assembly efficiency of pressure-sensitive sensors. [Solution] The pressure sensor comprises a hollow outer sheath 11, first conductive wires 21a to fourth conductive wires 24a provided inside the outer sheath 11 and capable of conducting electricity with each other due to the elastic deformation of the outer sheath 11, and a conductive wire twisted portion 14 provided on one side in the longitudinal direction of the outer sheath 11, formed by bringing the second and fourth conductive wires 22a and 24a into contact with each other. This eliminates the need for a short-circuit wire to connect the second and fourth conductive wires 22a and 24a in a conductive manner, and also eliminates the welding work required to connect such a short-circuit wire. Therefore, it is possible to improve the assembly workability of the pressure sensor 10. In addition, since the number of welding points can be reduced, the occurrence of welding defects and the like can be suppressed.

Flexible piezoelectric device having a ground plane. This description relates to a piezoelectric device (1000) comprising a substrate (100) covered by a piezoelectric sensor and electrically conductive tracks (200). The device (1000) comprises a ground plane, a first portion (150) of the ground plane covering the sensor and a second portion (220) of the ground plane covering the electrically conductive tracks (200). The first portion (150) of the ground plane is more flexible than the second portion (220) of the ground plane. The first portion (150) of the ground plane is in contact with the second portion (220) of the ground plane at an intermediate zone (Z3) to form a continuous ground plane. Figure for the abstract: Fig. 1B

The application discloses a power device and a preparation method thereof and electronic equipment, and relates to the technical field of electronic components. The power device comprises a semiconductor substrate and a two-dimensional metal material layer on the surface of the semiconductor substrate. In the application, the two-dimensional metal material layer is in contact with the semiconductor substrate to form an electrode contact. Since the two-dimensional layered metal material forming the two-dimensional metal material layer has an atomically flat surface without dangling bonds, the two-dimensional layered metal material can provide a uniform and low-wrinkle surface for the interface between the metal and the semiconductor substrate, which is beneficial to improving the contact quality, reducing the influence of the rough surface of the semiconductor substrate, improving the transport efficiency of the carriers, and further improving the performance of the semiconductor power device.

The present disclosure relates to a connector structure and an electronic device. The connector structure comprises a sleeve assembly, a movable assembly partially contained in the sleeve assembly and movable along the extension direction of the sleeve assembly, a first elastic member contained in the sleeve assembly and sleeved outside the movable assembly, and one end of the first elastic member connected to the bottom wall of the sleeve assembly. When the movable assembly moves towards the bottom wall of the sleeve assembly, the other end of the first elastic member contacts the movable assembly, so that the movable assembly is tilted to make the side wall of the movable assembly contact the side wall of the sleeve assembly, forming a first flow path of the connector structure. The embodiment of the present disclosure can reduce the possibility of instantaneous disconnection of the connector structure and improve the stability of the flow of the connector structure.

The invention discloses a polyhedral edge gap type progressive sealing temporary plugging ball, and belongs to the technical field of oil and gas exploitation. The outer surface of the temporary plugging ball is composed of a plurality of polygonal faces, the adjacent polygonal faces intersect to form edges, the edges are provided with fillet structures, and the outer surface of the temporary plugging ball is made of flexible materials. When the temporary plugging ball is set at a perforation hole, an initial sealing gap can be formed through contact of the edge and the edge of the perforation hole, and then the initial sealing gap is gradually closed to achieve complete plugging through deformation of the flexible material under the action of pressure difference through the deformation capacity of the flexible material. The technical bottleneck of low reliability of a traditional temporary plugging ball setting hole can be solved, the mechanical occlusion capacity with irregular holes can be enhanced through the optimized polyhedral geometric structure, and the success rate and economic benefits of hydraulic fracturing operation are remarkably improved.

The utility model discloses a contact type spring steel band sealing structure, and relates to the field of hot air drying. The sealing structure comprises a connecting plate of a groove-shaped structure, a spring steel band, an inner end pressing plate, an outer end base plate and an outer end pressing plate, wherein the spring steel band is arranged above a horizontal section of the connecting plate, the inner side edge and the outer side edge of the spring steel band are straight, and the middle of the spring steel band is arched to be in an arc shape; the inner side edge of the spring steel band is connected to the connecting plate through the inner end pressing plate; the bottom face of the inner side extending section of the outer end pressing plate, the upper surface of the connecting plate and the inner side end face of the outer end base plate define an embedding and extending groove where the outer side edge of the spring steel band is inserted and embedded, and a telescopic gap is reserved. By utilizing the elastic deformation and displacement expansion of the spring steel band, the curtain plate vertical rib and the spring steel band are always kept in contact on the premise of smooth operation of the curtain plate, contact type sealing is formed, hot air in a drying room under the curtain plate is effectively prevented from overflowing, heat loss is reduced, and the device has the advantages of energy conservation, consumption reduction and cost reduction. And the operation environment can be improved to a certain extent.

Process comprising: forming a first source / drain region (142); Forming a dielectric layer (46) over the first source / drain region (142); Etching the dielectric layer (46) to form a first contact opening (162), wherein the first source / drain region (142) is exposed through the first contact opening (162); depositing a dielectric spacer layer (66) extending into the first contact opening (162); etching the dielectric spacer layer (66) to form a first contact spacer (166) in the first contact opening; after depositing the dielectric spacer layer (66), implanting a dopant into the first source / drain region (142) through the first contact opening (162); and Forming a first contact plug (186) to fill the first contact opening (162), wherein the dopant penetrates a lower portion of the dielectric spacer layer (66) to reach the first source / drain region (142).

The utility model provides a fire hazard detector anti-lost pedestal comprising a pedestal body connected with a detector, the pedestal body is provided with a first wiring terminal and a second wiring terminal, the first wiring terminal and the second wiring terminal are oppositely arranged at an interval, the first wiring terminal is provided with an upper elastic contact piece extending towards the upper part of the second wiring terminal, and the second wiring terminal is provided with a lower elastic contact piece extending towards the lower part of the second wiring terminal. The first wiring end is provided with an upper elastic contact piece extending towards the upper portion of the first wiring end, the second wiring end is provided with a lower elastic contact piece extending towards the upper portion of the first wiring end, the extending end portion of the upper elastic contact piece and the extending end portion of the lower elastic contact piece are vertically opposite in a spaced mode, and the extending end portion of the upper elastic contact piece is extruded by the detector to make contact with the extending end portion of the lower elastic contact piece to form an access. The extension end portion of the upper elastic contact piece and the extension end portion of the lower elastic contact piece are reset and separated to form an open circuit, when the detector is removed and the upper elastic contact piece and the lower elastic contact piece are separated to form the open circuit, alarm is achieved, and the problem that the alarm cannot be given after the detector is removed is avoided.

The utility model relates to a crucible for smelting and a smelting furnace, which belong to the field of vacuum consumable smelting and are used for solving the problems that an ingot smelted by the existing crucible is easy to form pseudo soldering when being used as an electrode for welding during remelting, and even cannot be contacted to form hollow welding, so that the welding area of the electrode is insufficient. The crucible for smelting comprises a crucible base and a crucible side wall, the crucible base is fixedly connected with the crucible side wall, and a containing inner cavity is formed by the crucible base and the crucible side wall together. A protruding circular ring is arranged on the upper surface of the crucible base and located in the containing inner cavity, and a gap exists between the outer side of the circular ring and the inner wall of the crucible side wall. An annular groove is formed near the edge of the bottom of a cast ingot produced by adopting the crucible for smelting, and an arc-shaped bulge is arranged from the inner edge of the groove to the center of the bottom and is matched with a concave structure of the head of an upper cast ingot to be welded, so that the contact area is increased, pseudo soldering and hollow soldering are avoided, the welding area is ensured, and the purpose of safe production is achieved.