152 results about "Contact formation" patented technology

The present invention provides a display device and a method for manufacturing a display device, which prevent the adhesive layer from overflowing at the outer periphery of the display cell by controlling the amount of transparent optical adhesive that constitutes the adhesive layer formed between the cover plate and the display cell. [Solution] A glass cover plate 20 and an elastomer frame member 10 are formed in close contact using a glass insert in-mold method. A weir portion 14 is formed protruding from the inner surface 14 of the frame member 10, and a weir end surface 14a is formed at the boundary with the inner surface 23 of the cover plate 20. The transparent optical adhesive applied to the inner surface 23 of the cover plate 20 can be blocked by the weir end surface 14a, preventing the adhesive layer 60a from overflowing into area (ii) in order to bond the display cell 30.

Backside and frontside contact structures wrapping around source / drain regions provide increased contact areas for electrical connections and allow increased silicide areas. Sidewall metallization of epitaxially grown source / drain regions provides source / drain sidewall contacts that enable wrap-around contact formation on both the front side and the back side of a semiconductor device layer. Front side and back side contact metallization over the source / drain sidewall contacts allows wrap-around contact structures on both sides of the device layer.

The utility model provides a photovoltaic module ground -connection frame with puncture function relates to photovoltaic support technical field, including frame and puncture subassembly. This photovoltaic module ground -connection frame with puncture function fixes puncture subassembly in the side of frame, makes the sharp of moving plate aim at the contact area of photovoltaic support, ensures that the sharp and support surface preliminary contact. Spring exerts the thrust along the spring axis direction to moving plate because of precompression state, and the sharp punctures the oxide film on the surface of support and contacts with aluminium alloy base material along the vertical groove of outer frame and is pushed to the support direction sliding, and forms the conductive path. With the lapse of time, the aluminium alloy base material of support contact point reacts with air, and when the oxide film is regenerated, the moving plate is manually pushed to slide, the sharp cuts the newly generated oxide film again, maintains the conductive state of contact point, avoids the contact interruption, realizes the continuous puncture of oxide film, ensures that the ground -connection path is long -term stable.

The invention relates to the field of connectors, in particular to a high-speed transmission I / O connector which comprises U-shaped conductive terminals arranged in an array mode, a holder and a packaging shell, the U-shaped conductive terminals are packaged on the inner side of the holder, the two ends of each U-shaped conductive terminal are each provided with a V-shaped elastic contact part, the two V-shaped elastic contact parts correspond to each other, and the U-shaped conductive terminals are arranged in the packaging shell. The high-speed transmission I / O connector is characterized in that a U-shaped conductive terminal is arranged in the holding frame, a wiring part is arranged at the bent position of the U-shaped conductive terminal, the packaging shell comprises a front insertion part and a rear main body part, the rear main body part is packaged on the outer side of the holding frame, and according to the high-speed transmission I / O connector, on one hand, a rubber block on the inner side of a V-shaped elastic contact part is tightly attached to the connecting position of an insertion groove and a containing groove to form a first plug; and on the other hand, the first arc-shaped surface of the V-shaped elastic contact part is in close contact with the second arc-shaped surface of the accommodating groove to form second blocking, so that dust and impurities can be effectively prevented from entering the accommodating groove through double protection, poor contact of the V-shaped elastic contact part caused by accumulation of foreign matters is avoided, and stable contact performance in long-term use is guaranteed.

Disclosed herein are approaches for forming a dynamic random-access memory device (DRAM). One DRAM device may include plurality of pillars extending from a base layer, and a spacer layer formed along just a lower portion of each of the plurality of pillars. The DRAM further includes a body contact and a cap between the plurality of pillars, wherein the body contact is formed over the spacer layer, and a gate formed around the plurality of pillars. The DRAM further includes a bottom source / drain formed in the base layer and a top source / drain formed in each pillar of the plurality of pillars, wherein the top source / drain extends above the gate.

Methods, systems, and devices for divider and contact formation for memory cells are described. In some examples, a protective mask (e.g., a photoresist layer) may be formed over existing circuit structures above a substrate. Contact structures may be exposed when the protective mask is removed. In some examples, the protective mask may be removed using a dry etching operation. In some examples, one or more additional etching operations may be performed to expose (and subsequently fabricate) additional circuit structures.

Methods of forming an integrated circuit devices may include providing first and second active regions, an isolation layer, and first and second sacrificial stack structures. The first and second sacrificial stack structures may contact the first and second active regions, and the first and second sacrificial stack structures may each include a channel layer and a sacrificial layer. The methods may also include forming an etch stop layer on the isolation layer, replacing portions of the first and second sacrificial stack structures with first and second source / drain regions, forming a front contact including a front contact plug, forming a back-side insulator, and forming a back contact plug in the isolation layer and the back-side insulator. At least one of a portion of the front contact plug and a portion of the back contact plug may be in the etch stop layer.

The invention discloses a die and equipment for window hole punching forming of a pipe material clamping bearing retainer. The die comprises a rigid outer ring and an elastic inner ring. A ring-width-adjustable clamping interval is formed between the rigid outer ring and the elastic inner ring, a first annular boss is arranged on the outer wall of the elastic inner ring, a limiting step is machined on the inner wall of the rigid outer ring, and the elastic inner ring has a first working state and a second working state. The ring width size of the clamping section is larger than the wall thickness of the tubular blank with the second annular boss on the inner wall, so that the tubular blank can be conveniently placed into the clamping section; in the second working state, the top face of the first annular boss and the side face of the limiting step abut against the inner surface and the outer surface of the tubular blank correspondingly, the bottom face of the second annular boss of the tubular blank is tightly attached to the bottom face of the first annular boss of the elastic inner ring, and meanwhile the end face of the tubular blank is tightly contacted with the step limiting end face of the rigid outer ring; axial double limiting on the tubular blank is formed, and clamping stability is guaranteed.

The present disclosure relates to an electroplating system including a first contact detection sensor and a second contact detection sensor disposed at a surface of a cone of the electroplating system. The first contact detection sensor detects a first resistance at a first contact between a substrate to be plated by the electroplating system and a first contact pin, the second contact detection sensor detects a second resistance at a second contact between the substrate and a second contact pin. A controller receives the first resistance and the second resistance, and determines the first contact and the second contact are not properly formed when a difference between the first resistance and the second resistance is not within a first predetermined resistance range, or the first resistance or the second resistance is not within a second predetermined resistance range.

The invention relates to a semiconductor power device and a preparation method thereof. The semiconductor power device comprises a substrate, an epitaxial layer, a first grid electrode, a second grid electrode, a first dielectric layer, a second dielectric layer, a polycrystalline silicon region and a source electrode, wherein the material of the substrate comprises silicon carbide; the epitaxial layer comprises a drift region, a well layer, a first groove, a source region and a source contact region; the first groove extends into the drift region from the surface, far away from the substrate, of the epitaxial layer and penetrates through the well layer; the first grid electrode and the second grid electrode are located in the first groove, and the first grid electrode and the second grid electrode are arranged in an isolated mode. The first dielectric layer wraps the first grid electrode, the second dielectric layer wraps the second grid electrode, and the polycrystalline silicon region of the second conduction type is located between the first dielectric layer and the second dielectric layer and is in contact with the drift region to form a heterojunction diode; the source electrode is electrically connected with the second grid electrode to form a transistor of which the local grid electrode and the drain electrode are short-circuited, and the source electrode is also electrically connected with the polycrystalline silicon region. According to the invention, the conduction loss of the third quadrant can be reduced and the switching loss can be significantly reduced.

The application provides a PN diode based on a non-doped single crystal substrate and a preparation method thereof. ‑ a GaN layer, a p + GaN layer and an anode metal layer; wherein the non-doped single crystal structure comprises a non-doped drift layer on a front surface and an ion implantation layer on a back surface, the ion implantation layer is in contact with the cathode metal layer as a substrate of the PN diode, and the non-doped drift layer is in contact with the p ‑ GaN layer to form a PN junction. The PN diode based on the non-doped single crystal substrate and the preparation method thereof have the advantages of simplifying the preparation process, reducing the manufacturing cost, reducing the interface pollution, and improving the electrical performance and long-term reliability of the device.

Approaches herein relate to methods for forming self-aligned backside contacts and metal sidewall contacts in a semiconductor device. One method may include forming a plurality of alternating first layers and second layers atop a base layer, forming a trench in the plurality of alternating first layers and second layers, and forming a source / drain epitaxial layer along a sidewall of the trench. The method may further include forming a recess in the base layer by extending the trench into the base layer following formation of the source / drain epitaxial layer, filling the recess with a temporary material, and performing an implant by directing ions to the source / drain epitaxial layer after filling the recess with the temporary material, wherein the implant increases an ion concentration along an outer surface of the source / drain epitaxial layer.

The pipe joint includes a flare joint body 1F, a cap nut 2, and a stop ring 3. A curved pressure-contacting slope surface 32 of the stop ring 3 contacts a slope surface 5 with reduced-diameter tip of the flare joint body 1F under pressure to establish sealing by means of mutual contact between metallic surfaces. The pipe P is grasped in a tightly pressure-contacting state using a back tooth and a front tooth formed at a tip head 37 of a substantially cylindrical thin part 35 of the stop ring 3.

The present disclosure relates to a method for determining at least one of a first contact resistance and a second contact resistance of a two-wire Kelvin connection, the two-wire Kelvin connection being formed by contact of first and second measurement paths of a test device with a DUT. The method includes providing a predetermined measurement current to the DUT via a first measurement path during a first measurement in which the first and second measurement paths are coupled to the DUT, measuring a first voltage at an input node of an internal circuitry of the DUT to which the first and second measurement paths are coupled; at least one of a second measurement and a third measurement, the second measurement comprising providing a predetermined measurement current to the DUT via a first measurement path, measuring a second voltage at a first node of the first measurement path, and the third measurement comprising providing a predetermined measurement current to the DUT via a second measurement path, measuring a third voltage at a second node of the second measurement path; at least one of the first CRES and the second CRES is determined.

The utility model discloses a grinding type photoelectric connector in the related technical field of photoelectric connectors, which comprises a shell and a gland matched with the shell, the two sides of the middle of the shell are symmetrically provided with running fit flanges, the two sides of one end of the shell are symmetrically provided with locking clamping blocks, and the locking clamping blocks are matched with the running fit flanges. A rotary connecting end is arranged at one end of the gland, rotary matching holes are formed in the two sides of the rotary connecting end, and a locking clamping groove is formed in the end, away from the rotary matching holes, of the outer side of the gland. The lead contact end is arranged at the end of the copper sheet, the lead stripping fixing teeth are arranged at the position, matched with the lead contact end, of the top of the inner side of the gland, and in the process that the gland is turned over and pressed downwards, the lead stripping fixing teeth are matched with the lead contact end, so that a protective layer of a lead can be pressed and damaged, and the service life of the lead is prolonged. The metal core in the wire is effectively contacted with the contact end of the wire to form a path, a tool is not needed to remove the wire skin, and the connection efficiency is effectively improved.

An electromagnetic relay comprises a shell, an electromagnet, a movable armature, a movable contact assembly and a fixed contact assembly, the movable contact assembly is provided with a first contact plate and a second contact plate, the first contact plate is provided with a first movable contact and a second movable contact, and the second contact plate is provided with a third movable contact and a fourth movable contact; the fixed contact assembly is provided with first to fourth terminal plates which are not contacted with each other; the parts of the first and second terminal plates outside the housing correspond to the first contact plate, and the parts of the third and fourth terminal plates outside the housing correspond to the second contact plate. A first fixed contact of the first to fourth terminal plates in the shell corresponds to a first movable contact, a fourth fixed contact corresponds to a fourth movable contact, a third fixed contact corresponds to a second movable contact, a second fixed contact corresponds to a third movable contact, and the second and third terminal plates are arranged in the shell in a staggered manner; the movable contact assembly is driven by the movable armature to enable the first to fourth movable contacts to be in contact with or not to be in contact with the corresponding first to fourth fixed contacts, thereby forming a parallel current path.

To improve the assembly efficiency of pressure-sensitive sensors. [Solution] The pressure sensor comprises a hollow outer sheath 11, first conductive wires 21a to fourth conductive wires 24a provided inside the outer sheath 11 and capable of conducting electricity with each other due to the elastic deformation of the outer sheath 11, and a conductive wire twisted portion 14 provided on one side in the longitudinal direction of the outer sheath 11, formed by bringing the second and fourth conductive wires 22a and 24a into contact with each other. This eliminates the need for a short-circuit wire to connect the second and fourth conductive wires 22a and 24a in a conductive manner, and also eliminates the welding work required to connect such a short-circuit wire. Therefore, it is possible to improve the assembly workability of the pressure sensor 10. In addition, since the number of welding points can be reduced, the occurrence of welding defects and the like can be suppressed.

Flexible piezoelectric device having a ground plane. This description relates to a piezoelectric device (1000) comprising a substrate (100) covered by a piezoelectric sensor and electrically conductive tracks (200). The device (1000) comprises a ground plane, a first portion (150) of the ground plane covering the sensor and a second portion (220) of the ground plane covering the electrically conductive tracks (200). The first portion (150) of the ground plane is more flexible than the second portion (220) of the ground plane. The first portion (150) of the ground plane is in contact with the second portion (220) of the ground plane at an intermediate zone (Z3) to form a continuous ground plane. Figure for the abstract: Fig. 1B

The application discloses a power device and a preparation method thereof and electronic equipment, and relates to the technical field of electronic components. The power device comprises a semiconductor substrate and a two-dimensional metal material layer on the surface of the semiconductor substrate. In the application, the two-dimensional metal material layer is in contact with the semiconductor substrate to form an electrode contact. Since the two-dimensional layered metal material forming the two-dimensional metal material layer has an atomically flat surface without dangling bonds, the two-dimensional layered metal material can provide a uniform and low-wrinkle surface for the interface between the metal and the semiconductor substrate, which is beneficial to improving the contact quality, reducing the influence of the rough surface of the semiconductor substrate, improving the transport efficiency of the carriers, and further improving the performance of the semiconductor power device.

The present disclosure relates to a connector structure and an electronic device. The connector structure comprises a sleeve assembly, a movable assembly partially contained in the sleeve assembly and movable along the extension direction of the sleeve assembly, a first elastic member contained in the sleeve assembly and sleeved outside the movable assembly, and one end of the first elastic member connected to the bottom wall of the sleeve assembly. When the movable assembly moves towards the bottom wall of the sleeve assembly, the other end of the first elastic member contacts the movable assembly, so that the movable assembly is tilted to make the side wall of the movable assembly contact the side wall of the sleeve assembly, forming a first flow path of the connector structure. The embodiment of the present disclosure can reduce the possibility of instantaneous disconnection of the connector structure and improve the stability of the flow of the connector structure.

The invention discloses a polyhedral edge gap type progressive sealing temporary plugging ball, and belongs to the technical field of oil and gas exploitation. The outer surface of the temporary plugging ball is composed of a plurality of polygonal faces, the adjacent polygonal faces intersect to form edges, the edges are provided with fillet structures, and the outer surface of the temporary plugging ball is made of flexible materials. When the temporary plugging ball is set at a perforation hole, an initial sealing gap can be formed through contact of the edge and the edge of the perforation hole, and then the initial sealing gap is gradually closed to achieve complete plugging through deformation of the flexible material under the action of pressure difference through the deformation capacity of the flexible material. The technical bottleneck of low reliability of a traditional temporary plugging ball setting hole can be solved, the mechanical occlusion capacity with irregular holes can be enhanced through the optimized polyhedral geometric structure, and the success rate and economic benefits of hydraulic fracturing operation are remarkably improved.

The present disclosure describes a method to form a backside power rail (BPR) semiconductor device with an air gap. The method includes forming a fin structure on a first side of a substrate, forming a source / drain (S / D) region adjacent to the fin structure, forming a first S / D contact structure on the first side of the substrate and in contact with the S / D region, and forming a capping structure on the first S / D contact structure. The method further includes removing a portion of the first S / D contact structure through the capping structure to form an air gap and forming a second S / D contact structure on a second side of the substrate and in contact with the S / D region. The second side is opposite to the first side.

A semiconductor device includes a stacked transistor structure having field effect transistors on two levels. The two levels include a top side and a bottom side. Active regions are disposed on the bottom side including a leveled surface facing the top side and a faceted backside surface opposite the leveled surface. The leveled surface includes two different semiconductor materials. A backside contact in contact with the faceted backside surface forms a wraparound contact to reduce contact resistance.

A semiconductor structure is provided. The semiconductor structure includes a gate structure over a fin structure, and a source / drain structure in the fin structure and adjacent to the gate structure. The source / drain structure includes: a first epitaxial layer over the fin structure, a second epitaxial layer over the first epitaxial layer, and an epitaxial capping layer over the second epitaxial layer. The semiconductor structure also includes a silicide layer formed in contact with the source / drain structure. The silicide layer has a curved bottom surface, and the curved bottom surface of the silicide layer intersects with the second epitaxial layer and the epitaxial capping layer.

The utility model discloses a low-cost signal loop structure and a die thereof, comprising a PCB, a first probe, a chip, a second probe, a switching copper block and a third probe, one end of the first probe is contacted with the PCB, the other end of the first probe is contacted with a pin on the upper surface of the chip, and the switching copper block is connected with the third probe. One end of the second probe is in contact with a lower surface pin of the chip, the other end of the second probe is in contact with the switching copper block, one end of the third probe is in contact with the switching copper block, and the other end of the third probe is in contact with the PCB to form a complete signal loop. The device is simple in structural design and easy to maintain, the manufacturing period is shortened, and the cost is reduced.

The normally-closed thermal trip switch comprises a first conductor and a second conductor which are arranged in a shell in a penetrating mode, the first conductor located in the shell has elasticity and is arranged in a cantilever mode, and the first conductor is in direct conductive contact with the second conductor under limiting of a limiting piece to form a series circuit. Current flows through a series circuit formed by direct conductive contact of the first conductor and the second conductor. Part of the material of the limiting piece limiting the first conductor is a low-melting-point material lower than the melting point of the material of the shell, when the temperature of the first conductor reaches the melting point of the low-melting-point material, the part, abutting against the first conductor, of the limiting piece is softened or melted, limiting is relieved, and the first conductor located in the shell is far away from the second conductor under the action of the elastic force of the first conductor. The first conductor and the second conductor are disconnected from the direct conductive contact. The normally-closed thermal trip switch is high in response speed and can protect a power semiconductor device.

A method for forming an integrated resistance heater. The method includes the steps of: applying a metal layer in a pattern onto a beryllium oxide ceramic body, wherein the pattern of the metal layer is connected to a conductor; forming a pre-assembly by bringing a first surface of a substrate into contact with the metal layer so that the substrate is aligned with the ceramic body, wherein the substrate includes ceramic; and forming a heating element by heating the pre-assembly to a bonding temperature of 800°C to 1900°C to bond the substrate to the ceramic body, wherein the pattern maintains integrity when forming the heating element. The metal layer contains 10% to 100% by weight of niobium.

A fabricating method of a semiconductor device includes performing a first patterning process to form a first trench in a substrate structure. The substrate structure includes a substrate and a compound semiconductor layer over the substrate. The first patterning process is performed such that the first trench passes through the compound semiconductor layer and exposes the substrate. The fabricating method further includes forming a capacitor structure in the first trench. Forming the capacitor structure includes: forming a first metal layer lining the first trench and in contact with the substrate; forming a first dielectric layer lining the first metal layer and in contact with the first metal layer; and forming a second metal layer lining the first dielectric layer and in contact with the first dielectric layer.

The present invention relates to a variable transmittance optical stack structure, a manufacturing method therefor, and a smart window comprising same, the variable transmittance optical stack structure comprising: a first stack structure in which a first polarization plate including a first functional coating layer, a first transparent conductive layer, and a first alignment layer are sequentially stacked; a second stack structure in which a second polarization plate including a second functional coating layer, a second transparent conductive layer, and a second alignment layer are sequentially stacked; and a liquid crystal layer, wherein the liquid crystal layer includes ball spacers having a diameter of 4 to 10 μm and provided via an adhesion-imparting layer formed on any one alignment layer, and at least one transparent conductive layer is formed in direct contact with any one polarization plate, and the first and second functional coating layers each have a Vickers hardness of 18 to 41, and the number of ball spacers per unit area with respect to the diameter of the ball spacers satisfies a predetermined relationship.

This application discloses a glass powder, a conductive paste, a conductive electrode, and a crystalline silicon solar cell, relating to the field of semiconductor technology. The glass powder, by weight, comprises the following components: 56.5 mol%–72.5 mol% of a first glass forming body; 12 mol%–22 mol% of a glass intermediate; 7.5 mol%–14.5 mol% of a corrosive oxide; and 2.5 mol%–10 mol% of a modifier. In this application, the amount of corrosive oxide is limited to provide the etching activity required for effective contact formation while suppressing excessive chemical etching. The glass intermediate provides cations with high field strength, which form strong ionic covalent interactions with oxygen, thereby enhancing the bonding strength of the glass network. The modifier provides high-valence cations to adjust the charge compensation and coordination environment in the network to obtain good structural stability.