296 results about "Contact formation" patented technology

Provided are metal silicide contact forming processes including providing a substrate having a bottom crystalline silicon and di-electric sidewalls. This may be followed by metal layer deposition to form metal layer selectively on the bottom crystalline silicon using a metal halide precursor and a reducing agent. A ratio of a reducing agent flow rate to a metal halide precursor flow rate is at least 10:1, or 10:1-10,000:1. After the metal layer deposition, the substrate is annealed to convert the metal layer to a metal silicide layer without any substrate contamination.

The invention discloses a high-quality alloy welding wire preparation device, and belongs to the technical field of alloy welding wires, the high-quality alloy welding wire preparation device comprises a base, a moving structure is arranged at the center of the upper end face of the base, an operation table is arranged at the center of the upper end face of a connecting block, and a connecting structure is arranged at the center of the upper end face of the operation table; three auxiliary structures are transversely arranged at the center of the upper end face of the operation table, cutting structures are arranged at the positions, close to the front portions, of the centers of the two side walls of the operation table, and positioning structures are arranged at the centers of the upper end faces of the two first sliding blocks. The clamping device is simple in structure and convenient to operate, prevents deviation from affecting machining precision, achieves reliable fixing of the alloy welding wire, makes contact with the surface of the welding wire to form an upper-layer guide structure and a lower-layer guide structure, ensures that the welding wire keeps linear motion in the clamping and machining process, effectively avoids the problems of cutting errors and the like caused by deviation, and improves welding wire machining precision and stability.

The utility model relates to a bidirectional pressure-bearing low-temperature sealing structure. The sealing structure comprises a sealing ring, an upper coating layer, a lower coating layer, an upper flange and a lower flange. The sealing ring main body is annular, the cross section of the sealing ring main body is H-shaped, the upper coating layer and the lower coating layer are sleeved on the outer surface of the sealing ring, and the sealing ring, the upper coating layer and the lower coating layer are arranged between the upper flange and the lower flange. According to the two-way pressure-bearing low-temperature sealing structure, the upper wrapping layer and the lower wrapping layer are pressed through elastic deformation of the sealing ring after installation and pressure bearing, the wrapping layers make contact with the flange to form an inner sealing face and an outer sealing face, the two-way pressure-bearing low-temperature sealing structure is suitable for two-way pressure-bearing sealing in a low-temperature medium, the sealing effect is ensured, and the good engineering application prospect is achieved.

The invention provides a red copper connector and a diffusion welding method thereof, and relates to the technical field of metal welding, the diffusion welding method of the red copper connector comprises the following steps: taking a red copper base material, and performing nanocrystallization treatment on one side surface of the red copper base material through an ion impact method to form a welding surface; the annealed copper middle layer is placed between the two pieces of red copper base metal, the annealed copper middle layer makes contact with the welding face, and a connector to be welded is formed; and the connector to be welded is welded through a pulse current auxiliary diffusion welding method, the red copper connector is obtained, the welding temperature of the pulse current auxiliary diffusion welding method is 300 + / -5 DEG C, the pressure is 18-22 MPa, and the heat preservation time is 25-35 min. And low-temperature, rapid and small-deformation reliable connection of the red copper base metal is achieved.

A preparation method of an SOFC or SOEC with a long-life sealing interface is formed by allowing a sealing layer, a cell and a metal interconnector to be mutually contacted. In the present disclosure, with spinel as a coating material of the metal interconnector, staged thermal treatment is employed to form a high-density and strong-adhesion spinel coating to improve the endurance and entire performance of the metal interconnector. The present disclosure also optimizes the material system of the sealing layer, namely, uses the SiO2—MgO—Al2O3—SrO—V2O5 system to prepare the sealing layer, which not only improves the resistivity of the sealing layer but also increases its hardness and fracture strength. Further, under the condition of ensuring the airtightness, the coefficient of thermal expansion of the sealing layer is matched with the coefficients of thermal expansion of the metal interconnector and the cell, improving the endurance of the sealing interface.

A semiconductor IC structure includes an upper transistor and lower transistor each with respective source / drain (S / D) regions. The upper S / D region includes a S / D cut sidewall. A first frontside contact is in contact with the upper S / D region and includes a first conductive portion with a first cut sidewall that is substantially coplanar with the S / D cut sidewall. A second frontside contact is in contact with the lower S / D region and includes a second conductive portion with a second cut sidewall. A contact cut region may be between the first and second frontside contacts. This structure may be fabricated at least in part by forming a monolithic frontside contact against the lower S / D region and against the upper S / D region and simultaneously separating the monolithic frontside contact into the first frontside contact and the second frontside contact while removing a portion of the upper S / D region.

The present invention provides a display device and a method for manufacturing a display device, which prevent the adhesive layer from overflowing at the outer periphery of the display cell by controlling the amount of transparent optical adhesive that constitutes the adhesive layer formed between the cover plate and the display cell. [Solution] A glass cover plate 20 and an elastomer frame member 10 are formed in close contact using a glass insert in-mold method. A weir portion 14 is formed protruding from the inner surface 14 of the frame member 10, and a weir end surface 14a is formed at the boundary with the inner surface 23 of the cover plate 20. The transparent optical adhesive applied to the inner surface 23 of the cover plate 20 can be blocked by the weir end surface 14a, preventing the adhesive layer 60a from overflowing into area (ii) in order to bond the display cell 30.

A semiconductor device is provided. The semiconductor device includes first transistors positioned over a substrate and arranged along a first row in a first direction substantially parallel to a working surface of the substrate. Second transistors are positioned over the substrate and arranged along a second row in the first direction. Each first transistor is aligned with a respective second transistor in a second direction substantially parallel to the working surface of the substrate. An isolation wall structure is positioned between the first transistors and the second transistors.

Backside and frontside contact structures wrapping around source / drain regions provide increased contact areas for electrical connections and allow increased silicide areas. Sidewall metallization of epitaxially grown source / drain regions provides source / drain sidewall contacts that enable wrap-around contact formation on both the front side and the back side of a semiconductor device layer. Front side and back side contact metallization over the source / drain sidewall contacts allows wrap-around contact structures on both sides of the device layer.

The utility model provides a photovoltaic module ground -connection frame with puncture function relates to photovoltaic support technical field, including frame and puncture subassembly. This photovoltaic module ground -connection frame with puncture function fixes puncture subassembly in the side of frame, makes the sharp of moving plate aim at the contact area of photovoltaic support, ensures that the sharp and support surface preliminary contact. Spring exerts the thrust along the spring axis direction to moving plate because of precompression state, and the sharp punctures the oxide film on the surface of support and contacts with aluminium alloy base material along the vertical groove of outer frame and is pushed to the support direction sliding, and forms the conductive path. With the lapse of time, the aluminium alloy base material of support contact point reacts with air, and when the oxide film is regenerated, the moving plate is manually pushed to slide, the sharp cuts the newly generated oxide film again, maintains the conductive state of contact point, avoids the contact interruption, realizes the continuous puncture of oxide film, ensures that the ground -connection path is long -term stable.

The invention relates to the field of connectors, in particular to a high-speed transmission I / O connector which comprises U-shaped conductive terminals arranged in an array mode, a holder and a packaging shell, the U-shaped conductive terminals are packaged on the inner side of the holder, the two ends of each U-shaped conductive terminal are each provided with a V-shaped elastic contact part, the two V-shaped elastic contact parts correspond to each other, and the U-shaped conductive terminals are arranged in the packaging shell. The high-speed transmission I / O connector is characterized in that a U-shaped conductive terminal is arranged in the holding frame, a wiring part is arranged at the bent position of the U-shaped conductive terminal, the packaging shell comprises a front insertion part and a rear main body part, the rear main body part is packaged on the outer side of the holding frame, and according to the high-speed transmission I / O connector, on one hand, a rubber block on the inner side of a V-shaped elastic contact part is tightly attached to the connecting position of an insertion groove and a containing groove to form a first plug; and on the other hand, the first arc-shaped surface of the V-shaped elastic contact part is in close contact with the second arc-shaped surface of the accommodating groove to form second blocking, so that dust and impurities can be effectively prevented from entering the accommodating groove through double protection, poor contact of the V-shaped elastic contact part caused by accumulation of foreign matters is avoided, and stable contact performance in long-term use is guaranteed.

The present invention relates to the field of electronic manufacturing production, specifically a device for taking and placing integrated circuit chips, including a workbench, on which a placement table and a take and place table are respectively arranged from back to front, and a movable seat is arranged at the rear end of the workbench. The present invention sets a cleaning component, and the cleaning disk, dust extraction ring, high-pressure exhaust pipe and other structures in the cleaning component work together to quickly clean up impurities on the surface of the chip before the suction nozzle rod adsorbs the chip. The high-pressure exhaust pipe in the annular array cooperates with the dust extraction groove at the bottom to fully cover the chip surface, ensuring that as many impurities as possible are sucked away, and the sealing gasket under the cleaning disk contacts the surface of the chip table to form a sealed space. When the total exhaust disk generates negative pressure, a local negative pressure environment is formed, which enhances the concentration of airflow and makes impurities on the chip surface more quickly sucked into the dust extraction groove, further improving the efficiency of cleaning impurities and reducing the risk of impurities clogging the suction nozzle pores.

Disclosed herein are approaches for forming a dynamic random-access memory device (DRAM). One DRAM device may include plurality of pillars extending from a base layer, and a spacer layer formed along just a lower portion of each of the plurality of pillars. The DRAM further includes a body contact and a cap between the plurality of pillars, wherein the body contact is formed over the spacer layer, and a gate formed around the plurality of pillars. The DRAM further includes a bottom source / drain formed in the base layer and a top source / drain formed in each pillar of the plurality of pillars, wherein the top source / drain extends above the gate.

Methods, systems, and devices for divider and contact formation for memory cells are described. In some examples, a protective mask (e.g., a photoresist layer) may be formed over existing circuit structures above a substrate. Contact structures may be exposed when the protective mask is removed. In some examples, the protective mask may be removed using a dry etching operation. In some examples, one or more additional etching operations may be performed to expose (and subsequently fabricate) additional circuit structures.

The invention relates to a gelatin polymer molecular brush, a surface treatment liquid and an application of the surface treatment liquid in a semiconductor device. The gelatin polymer molecular brush has a structure as shown in a structural formula (I) or (II) or a product obtained after oxidation, coordination and crosslinking of a catechol group of the gelatin polymer molecular brush. The method for processing the surface treatment liquid in the semiconductor device comprises the following specific steps: contacting the surface treatment liquid with the surface of a first material to form a thin film, and bonding the thin film with a second material; wherein the contact method is spraying or dipping, and the first material and the second material are respectively selected from an inorganic material and / or a resin material. The gelatin polymer molecular brush provided by the invention can be used as a main component of a surface treatment liquid for bonding materials, so that the peeling strength between the materials can be ensured and the bonding force and the heat resistance can be improved under the condition of not carrying out browning treatment on the materials, and the gelatin polymer molecular brush can be applied to manufacturing of semiconductor devices, especially multilayer PCBs (Printed Circuit Boards).

Methods of forming an integrated circuit devices may include providing first and second active regions, an isolation layer, and first and second sacrificial stack structures. The first and second sacrificial stack structures may contact the first and second active regions, and the first and second sacrificial stack structures may each include a channel layer and a sacrificial layer. The methods may also include forming an etch stop layer on the isolation layer, replacing portions of the first and second sacrificial stack structures with first and second source / drain regions, forming a front contact including a front contact plug, forming a back-side insulator, and forming a back contact plug in the isolation layer and the back-side insulator. At least one of a portion of the front contact plug and a portion of the back contact plug may be in the etch stop layer.

The invention discloses a die and equipment for window hole punching forming of a pipe material clamping bearing retainer. The die comprises a rigid outer ring and an elastic inner ring. A ring-width-adjustable clamping interval is formed between the rigid outer ring and the elastic inner ring, a first annular boss is arranged on the outer wall of the elastic inner ring, a limiting step is machined on the inner wall of the rigid outer ring, and the elastic inner ring has a first working state and a second working state. The ring width size of the clamping section is larger than the wall thickness of the tubular blank with the second annular boss on the inner wall, so that the tubular blank can be conveniently placed into the clamping section; in the second working state, the top face of the first annular boss and the side face of the limiting step abut against the inner surface and the outer surface of the tubular blank correspondingly, the bottom face of the second annular boss of the tubular blank is tightly attached to the bottom face of the first annular boss of the elastic inner ring, and meanwhile the end face of the tubular blank is tightly contacted with the step limiting end face of the rigid outer ring; axial double limiting on the tubular blank is formed, and clamping stability is guaranteed.

To stabilize binding processing to a recording material bundle compared with a case where a guide part for guiding an interlock part interlocked with a tooth is not provided.SOLUTION: A hole part 93 extending along a linear path 4Y is provided on an interlock part 600 side interlocked with a second binding tooth 72. Further, a rod-like member 640 inserted into the hole part 93 and extending along the linear path 4Y is provided on a lower support member 700 side. The rod-like member 640 is fixed to the lower support member 700. An outer peripheral surface of the rod-like member 640 serves as a guide part 90, and the interlock part 600 is guided by using the outer peripheral surface. A to-be-guided part is constituted by an inner surface of the hole part 93 extending along a movement direction of the interlock part 600. The guide part is constituted by the rod-like member 640 extending along the movement direction of the interlock part 600 and brought into contact with the inner surface of the hole part 93.SELECTED DRAWING: Figure 6

The present disclosure relates to an electroplating system including a first contact detection sensor and a second contact detection sensor disposed at a surface of a cone of the electroplating system. The first contact detection sensor detects a first resistance at a first contact between a substrate to be plated by the electroplating system and a first contact pin, the second contact detection sensor detects a second resistance at a second contact between the substrate and a second contact pin. A controller receives the first resistance and the second resistance, and determines the first contact and the second contact are not properly formed when a difference between the first resistance and the second resistance is not within a first predetermined resistance range, or the first resistance or the second resistance is not within a second predetermined resistance range.

The invention relates to a semiconductor power device and a preparation method thereof. The semiconductor power device comprises a substrate, an epitaxial layer, a first grid electrode, a second grid electrode, a first dielectric layer, a second dielectric layer, a polycrystalline silicon region and a source electrode, wherein the material of the substrate comprises silicon carbide; the epitaxial layer comprises a drift region, a well layer, a first groove, a source region and a source contact region; the first groove extends into the drift region from the surface, far away from the substrate, of the epitaxial layer and penetrates through the well layer; the first grid electrode and the second grid electrode are located in the first groove, and the first grid electrode and the second grid electrode are arranged in an isolated mode. The first dielectric layer wraps the first grid electrode, the second dielectric layer wraps the second grid electrode, and the polycrystalline silicon region of the second conduction type is located between the first dielectric layer and the second dielectric layer and is in contact with the drift region to form a heterojunction diode; the source electrode is electrically connected with the second grid electrode to form a transistor of which the local grid electrode and the drain electrode are short-circuited, and the source electrode is also electrically connected with the polycrystalline silicon region. According to the invention, the conduction loss of the third quadrant can be reduced and the switching loss can be significantly reduced.

The application provides a PN diode based on a non-doped single crystal substrate and a preparation method thereof. ‑ a GaN layer, a p + GaN layer and an anode metal layer; wherein the non-doped single crystal structure comprises a non-doped drift layer on a front surface and an ion implantation layer on a back surface, the ion implantation layer is in contact with the cathode metal layer as a substrate of the PN diode, and the non-doped drift layer is in contact with the p ‑ GaN layer to form a PN junction. The PN diode based on the non-doped single crystal substrate and the preparation method thereof have the advantages of simplifying the preparation process, reducing the manufacturing cost, reducing the interface pollution, and improving the electrical performance and long-term reliability of the device.

Approaches herein relate to methods for forming self-aligned backside contacts and metal sidewall contacts in a semiconductor device. One method may include forming a plurality of alternating first layers and second layers atop a base layer, forming a trench in the plurality of alternating first layers and second layers, and forming a source / drain epitaxial layer along a sidewall of the trench. The method may further include forming a recess in the base layer by extending the trench into the base layer following formation of the source / drain epitaxial layer, filling the recess with a temporary material, and performing an implant by directing ions to the source / drain epitaxial layer after filling the recess with the temporary material, wherein the implant increases an ion concentration along an outer surface of the source / drain epitaxial layer.

This application provides a chip and its fabrication method, an RF power amplifier, and a terminal, relating to the field of semiconductor technology, which can ensure sufficient contact between the epitaxial layer and the source conductive layer. The chip includes a first transistor and a second transistor. The method includes: forming an epitaxial layer (11) and a source conductive layer (21) sequentially stacked on a substrate (10); the epitaxial layer includes a first via to form a first epitaxial layer (101) of the first transistor and a second epitaxial layer (102) of the second transistor. The source conductive layer includes a first source (211) of the first transistor and a second source (212) of the second transistor. The edge of the first source (211) is flush with the edge of the first epitaxial layer (101) near the first via, and the edge of the second source (212) is flush with the edge of the second epitaxial layer (102) near the first via. A first conductive layer (13) is formed in the first through hole; the first conductive layer (13) is in contact with the first source electrode (211) and the second source electrode (212); a second through hole is formed; a second conductive layer (14) is formed in the second through hole, the second conductive layer (14) is in contact with the first conductive layer (13) and is grounded.

The pipe joint includes a flare joint body 1F, a cap nut 2, and a stop ring 3. A curved pressure-contacting slope surface 32 of the stop ring 3 contacts a slope surface 5 with reduced-diameter tip of the flare joint body 1F under pressure to establish sealing by means of mutual contact between metallic surfaces. The pipe P is grasped in a tightly pressure-contacting state using a back tooth and a front tooth formed at a tip head 37 of a substantially cylindrical thin part 35 of the stop ring 3.

The present disclosure relates to a method for determining at least one of a first contact resistance and a second contact resistance of a two-wire Kelvin connection, the two-wire Kelvin connection being formed by contact of first and second measurement paths of a test device with a DUT. The method includes providing a predetermined measurement current to the DUT via a first measurement path during a first measurement in which the first and second measurement paths are coupled to the DUT, measuring a first voltage at an input node of an internal circuitry of the DUT to which the first and second measurement paths are coupled; at least one of a second measurement and a third measurement, the second measurement comprising providing a predetermined measurement current to the DUT via a first measurement path, measuring a second voltage at a first node of the first measurement path, and the third measurement comprising providing a predetermined measurement current to the DUT via a second measurement path, measuring a third voltage at a second node of the second measurement path; at least one of the first CRES and the second CRES is determined.

The utility model discloses a grinding type photoelectric connector in the related technical field of photoelectric connectors, which comprises a shell and a gland matched with the shell, the two sides of the middle of the shell are symmetrically provided with running fit flanges, the two sides of one end of the shell are symmetrically provided with locking clamping blocks, and the locking clamping blocks are matched with the running fit flanges. A rotary connecting end is arranged at one end of the gland, rotary matching holes are formed in the two sides of the rotary connecting end, and a locking clamping groove is formed in the end, away from the rotary matching holes, of the outer side of the gland. The lead contact end is arranged at the end of the copper sheet, the lead stripping fixing teeth are arranged at the position, matched with the lead contact end, of the top of the inner side of the gland, and in the process that the gland is turned over and pressed downwards, the lead stripping fixing teeth are matched with the lead contact end, so that a protective layer of a lead can be pressed and damaged, and the service life of the lead is prolonged. The metal core in the wire is effectively contacted with the contact end of the wire to form a path, a tool is not needed to remove the wire skin, and the connection efficiency is effectively improved.

Methods, systems, and devices for contact formation via a selective etch are described. For instance, a manufacturing system may form a first dielectric layer. Additionally, the manufacturing system may form a second dielectric layer on the first dielectric layer and a third dielectric layer on the second dielectric layer. The manufacturing system may etch the second dielectric layer and the third dielectric layer to form a set of first dielectric lines and a set of second dielectric lines. The manufacturing system may perform a metallization process to form a set of conductive lines and may form a contact above a subset of the set of conductive lines. A bottom surface of the contact may be above a respective top surface of a second dielectric line of the set of second dielectric lines based on forming the set of second dielectric lines.

Busbar (10; 110) for the electrically conductive connection of battery cells (142), comprising a plurality of exposed contact tongues (18; 118), each of which is designed for a metallurgical connection with a contact formation (143, 145) of a battery cell (142), wherein the contact tongues (18; 118) are integrally formed with an electrically conductive web structure (12; 112), wherein the web structure (12; 112) electrically connects the contact tongues (18; 118), wherein a cladding structure (14; 114) made of electrically insulating material is arranged on at least one section of the web structure (12; 112), wherein the busbar (10; 110) has a first coupling area (24; 124) with at least one first coupling formation (26; 126) and a length along a virtual distance axis (A) the second coupling area (30; ) arranged at a distance from the first coupling area (24; 124).130) with at least one second coupling formation (32; 132), wherein the first coupling formation (26; 126) and the second coupling formation (32; 132) are designed to be complementary such that the second coupling formation (32; 132) of the busbar (10; 110) can be coupled to a first negative feedback formation of a first connecting object (10; 110) that is different from the busbar (10; 110), wherein the first negative feedback formation corresponds in its shape and dimensions to the first coupling formation (26; 126), and that the first coupling formation (26; 126) of the busbar (10; 110) can be coupled to a second negative feedback formation of a second connecting object (10; 110) that is different from the busbar (10; 110), wherein the second feedback formation in its shape and dimensions of the second coupling formation (32;132) corresponds, wherein the electrically conductive bridge structure (112) between two contact tongues (118) has at least one fuse section (148) formed integrally with the bridge structure (112), wherein the bridge structure (112) has a smaller conductor cross-section in the fuse section than in the areas between the fuse section (148) and each of the two contact tongues (118), wherein at least a part of the fuse section (148) is exposed without being covered by the cladding structure (114).

An electromagnetic relay comprises a shell, an electromagnet, a movable armature, a movable contact assembly and a fixed contact assembly, the movable contact assembly is provided with a first contact plate and a second contact plate, the first contact plate is provided with a first movable contact and a second movable contact, and the second contact plate is provided with a third movable contact and a fourth movable contact; the fixed contact assembly is provided with first to fourth terminal plates which are not contacted with each other; the parts of the first and second terminal plates outside the housing correspond to the first contact plate, and the parts of the third and fourth terminal plates outside the housing correspond to the second contact plate. A first fixed contact of the first to fourth terminal plates in the shell corresponds to a first movable contact, a fourth fixed contact corresponds to a fourth movable contact, a third fixed contact corresponds to a second movable contact, a second fixed contact corresponds to a third movable contact, and the second and third terminal plates are arranged in the shell in a staggered manner; the movable contact assembly is driven by the movable armature to enable the first to fourth movable contacts to be in contact with or not to be in contact with the corresponding first to fourth fixed contacts, thereby forming a parallel current path.