Patents
Literature
Patsnap Eureka AI that helps you search prior art, draft patents, and assess FTO risks, powered by patent and scientific literature data.

4results about How to "Reduce step height" patented technology

Novel oil port screw plug

ActiveCN222453130USimple structurereduce manufacturing costClosuresOblique angleMechanical engineering
The utility model discloses a novel oil port screw plug which comprises a screw plug body, an outer hexagonal connecting part is arranged at the left side end of the screw plug body, an inner hexagonal connecting hole is formed in the inner side of the outer hexagonal connecting part, an oblique angle is arranged on the outer circumference of the screw plug body, and installation end faces abutting against an external workpiece are distributed on the right side of the screw plug body along the circumference. The right side of the screw plug body is further connected with a flange, the distance between the outermost side end of the flange and the installation end face is L, and L ranges from 0.1 mm to 0.2 mm. The utility model has the advantages of simple structure, low manufacturing cost, convenience in after-sales maintenance and replacement of products, and effective reduction of paint accumulation.
Novel oil port screw plug
View all
Owner:QUANXING MACHINING GRP

Recessed polysilicon ESD diode for power MOSFET

PendingCN119153460AIncreased level of protectionIncrease the cross-sectional areaSolid-state devicesSemiconductor devicesPower MOSFETCondensed matter physics
A protection structure for a power transistor includes one or more pairs of back-to-back pn junction diodes formed in a trench polysilicon layer disposed in a trench formed in a semiconductor substrate. At least a portion of the trench polysilicon layer protrudes over a top surface of the semiconductor substrate. Alternating N-type doped regions and P-type doped regions are formed in the trench polysilicon layer along the length of the trench. When coupled across the gate and source terminals of the power transistor, a protection structure may advantageously be applied to protect the power transistor from high voltage ESD events.
Recessed polysilicon ESD diode for power MOSFET
View all
Owner:ALPHA & OMEGA SEMICON INT LP

A differential capacitive sensor and a connecting column forming method thereof

ActiveCN118945571BImprove stressReduced risk of structural damageElectrostatic transducersMechanical engineeringPhysics
The present invention relates to a differential capacitive sensor and a method for forming a connecting column thereof, wherein the sensor comprises: a back plate; a first diaphragm and a second diaphragm located on both sides of the back plate, the first diaphragm and the second diaphragm are respectively spaced apart from the back plate, the edges of the first diaphragm and the second diaphragm are sealed and connected, a low-pressure sealed cavity is formed between the first diaphragm and the second diaphragm, and the back plate is located in the low-pressure sealed cavity; a plurality of connecting columns, the connecting columns pass through the back plate and connect the first diaphragm and the second diaphragm, the plurality of connecting columns are spaced apart and distributed in the plane of the back plate, a through hole for the connecting columns to pass through is provided on the back plate, the connecting columns comprise a connecting block and a hollow connecting tube, one end of the connecting tube is connected to the first diaphragm, and the other end passes through the back plate and is connected to the second diaphragm through the connecting block. The present application can improve the stress condition of the diaphragm at the connecting column and the stress condition of the connecting column itself, thereby improving the reliability of the device.
A differential capacitive sensor and a connecting column forming method thereof
View all
Owner:HUBEI JIUFENGSHAN LAB

Method of manufacturing a semiconductor device

PendingCN122138680AIncrease charge pathImprove breakdown voltageEtchingHigh voltage transistors
This invention provides a method for manufacturing a semiconductor device. Before the active region manufacturing process, trench etching is performed on the substrate region to be fabricated as a high-voltage transistor to form at least a first depth adjustment trench located outside the gate oxide region of the high-voltage transistor. A first drift region is then formed by ion implantation. This solves the problem of incomplete corner implantation caused by the rounded exposure of photoresist corners in existing LDD processes. Furthermore, the depth of the first depth adjustment trench increases the bottom depth of the shallow trench isolation structure used to isolate the source / drain regions and channel regions of the high-voltage transistor, increasing the charge path of the high-voltage transistor and its breakdown voltage. Further, by simultaneously forming a gate oxide trench for fabricating a thick gate oxide layer with the first depth adjustment trench, the step height between the high-voltage transistor and other components is reduced, thereby reducing the load effect and defects in subsequent processes and improving the performance of the high-voltage transistor.
Method of manufacturing a semiconductor device
View all
Owner:QINGDAO AUCMA YUNLIAN INFORMATION TECHNOLOGY CO LTD