4063 results about "Single crystal" patented technology

A silicon carbide source material structure for use in a sublimation system for growing single crystal silicon carbide is provided. The silicon carbide source material structure may comprise a first layer and a second layer, the first layer being different from the second layer in at least one property.

The invention discloses a grinding and polishing processing method of an ultra-precise YIG (yttrium iron garnet) single crystal, which is suitable for a planar YIG (yttrium iron garnet) single crystal (circle) prepared by a liquid phase epitaxy method, a molten salt method and a floating zone melting method, and comprises the following steps: grinding the YIG single crystal, and controlling the thickness and the total thickness deviation (TTV) of the crystal; rough polishing is carried out on the YIG single crystal, and subsurface damage of the wafer is eliminated; and finally, carrying out ultra-precision polishing on the YIG crystal to realize surface planarization with sub-nano-scale surface roughness. According to the method, the surface roughness of the yttrium iron garnet single crystal can be controlled below 1nm.

A semiconductor device includes a foundation layer and a transistor layer. The foundation layer is based on single-crystalline silicon carbide and includes a current propagation region of a first conductivity type and a non-depletable shielding structure of a second conductivity type. The transistor layer is based on epitaxially grown single-crystalline silicon carbide and includes a transistor cell (TC) configured to control a current through the current propagation region. The transistor layer is formed on the foundation layer after formation of the shielding structure in the foundation layer such that an epitaxial interface forms between the transistor foundation layer and the layer. The current propagation region extends from the epitaxial interface between neighboring partial regions of the shielding structure. Along a vertical line orthogonal to the epitaxial interface and through a pn junction between the shielding structure and a region of the first conductivity type in the transistor layer, a net dopant concentration changes by at least 1e17 1 / cm3 per 0.1 μm at the position of the pn junction.

The invention relates to the technical field of batteries, in particular to a composite positive electrode material and a preparation method and application thereof. A composite positive electrode material comprises a positive electrode base material, the chemical formula of the positive electrode base material is LimNixCoyMnzQaRdO2, m is larger than or equal to 1 and smaller than or equal to 1.2, and xlt is larger than or equal to 0.5; 1, 0lt; yt; Yt; 0.5, Li comprises a primary Li element and a secondary Li element, Q is a primary doping element, 0 lt; a < = 0.5, R is a secondary doping element, and 0 < d < = 0.5; x + y + z + a + d = 1, and the doping depth h of the secondary doping element meets 0 lt; h is less than or equal to 850nm; and the particle sizes D10, D50 and D90 of the positive electrode base material meet the condition that (D90-D10) / D50 is more than or equal to 0.8 and less than or equal to 1.15. According to the composite positive electrode material, the phenomena of enrichment of doping elements on the surface of a single crystal and non-uniform lithiation in the single crystal can be relieved, so that the capacity and the cycling stability of the positive electrode material are improved.

The invention discloses a semiconductor structure, a manufacturing method thereof and electronic equipment. The manufacturing method comprises the following steps: forming a first stack structure on a semiconductor substrate; forming a horizontal opening in the first region of the first stack structure, and forming a first vertical opening exposing the semiconductor substrate and a second vertical opening not exposing the semiconductor substrate at two sides of the first region; epitaxially growing using the first vertical opening to form a single crystal active pattern in the horizontal opening; a transistor is formed based on the active pattern. The process difficulty of forming the single crystal active pattern can be reduced, the defect that holes exist in the active pattern can be avoided or reduced, and the electrical performance of the transistor can be improved.

The invention discloses a ternary positive electrode material, a preparation method thereof and an electrochemical device. The preparation method comprises the following steps: mixing a continuous ternary precursor, a lithium source and an aluminum source, and carrying out first sintering to obtain a first sintered product; the primary sintering product is subjected to secondary sintering and dispersion, a single-crystal base material is obtained, the base material comprises a plurality of primary particles, the average size of the primary particles ranges from 2 micrometers to 3 micrometers, and the median particle size Dv50 of the primary particles ranges from 3 micrometers to 5 micrometers; mixing the matrix material with an aqueous solution of lithium phosphate, and carrying out wet coating to obtain a coated product; and sintering the coated product for the third time, so that the lithium phosphate forms a coating layer on the surface of the matrix material, and the ternary positive electrode material is obtained. According to the invention, through two-parameter control of the average size and the median particle size of the matrix material and simultaneous aluminum element internal doping and lithium phosphate surface coating of the matrix material, the structural stability and the cycle performance of the ternary positive electrode material are improved and the service life of the ternary positive electrode material is prolonged through a synergistic effect.

The invention discloses a nickel-based single-crystal high-temperature alloy with high structure stability and a preparation method thereof, and relates to the technical field of high-temperature alloys. The nickel-based single crystal high-temperature alloy provided by the invention is prepared from the following components in percentage by mass: 5 to 7 percent of Al, 7.5 to 10 percent of Co, 5 to 7 percent of Cr, 0.1 to 0.2 percent of Hf, 0 to 2 percent of Mo, 5.5 to 7.5 percent of Ta, 0 to 1 percent of Ti, 8 to 10 percent of W, 0.02 to 0.05 percent of C, 0.003 to 0.005 percent of B and the balance of Ni. According to the invention, by controlling the ratio of elements and avoiding the addition of Re, the precipitation temperature of a harmful TCP phase is obviously reduced to about 840 DEG C on the basis of maintaining a sufficient solid solution strengthening effect, and the long-term stability of the structure is greatly improved. The high-temperature mechanical property of the alloy provided by the invention reaches the level equivalent to that of a traditional Re-containing second-generation single-crystal alloy and is remarkably superior to that of foreign Re-free single-crystal alloys MD2 and Rene N500, and the nickel-based single-crystal high-temperature alloy with high structure stability successfully realizes the unification of low cost and high performance, and is suitable for industrial production. And a reliable material solution is provided for manufacturing the heavy-duty gas turbine blade with higher market competitiveness.

The invention belongs to the technical field of photoelectric detection, and discloses a molybdenum ditelluride / nickel ditelluride heterojunction-based photoelectric detector and a preparation method and application thereof, and the molybdenum ditelluride / nickel ditelluride heterojunction-based photoelectric detector is prepared by stripping single crystal molybdenum ditelluride onto an oxide layer silicon substrate through a mechanical stripping method to obtain a molybdenum ditelluride nanosheet; a nickel ditelluride nanosheet is obtained through a chemical vapor deposition method; the molybdenum ditelluride nanosheet is transferred to the nickel ditelluride nanosheet through a PVA dry transfer method to form an overlapped part, and a molybdenum ditelluride / nickel ditelluride heterojunction is formed; and preparing electrodes at two ends of the molybdenum ditelluride / nickel ditelluride heterojunction through electron beam evaporation or thermal evaporation. The photoelectric detector utilizes a built-in electric field generated by a two-dimensional material heterojunction interface to effectively improve the photoelectric conversion efficiency and response speed of a visible light wave band.

The invention discloses a single crystal furnace magnetic field intensity measuring device and method. The device comprises an upper supporting disc, a lower supporting disc and a longitudinal adjusting mechanism, an inner gear ring is arranged on the lower end face of the lower supporting disc, a rotating disc meshed with the inner gear ring is rotationally installed on the lower end face of the lower supporting disc, a magnetic field intensity probe is eccentrically installed on the lower end face of the rotating disc, and a driving wheel meshed with the rotating disc is rotationally installed in the center of the lower end face of the lower supporting disc and can drive the rotating disc to rotate along the inner gear ring when rotating; the upper supporting disc is arranged right above the lower supporting disc; the longitudinal adjusting mechanism comprises a power part and a driving rod; the lower end of the driving rod is rotationally connected with the upper end face of the lower supporting disc, and the upper end of the driving rod penetrates through the upper supporting disc to be connected to the power part which can drive the lower supporting disc to longitudinally reciprocate. According to the invention, by controlling the magnetic field intensity probe to descend gradually and assisting the magnetic field intensity probe to rotate along the single crystal furnace body and form autorotation, the magnetic field intensity at a plurality of point positions at the same height is measured, so that the measurement accuracy is improved.

The invention discloses a high-efficiency low-loss preparation method of a single crystal silicon carbide wafer. The method comprises the following steps: A, grinding the surface of a single crystal silicon carbide ingot; b, the ultrafast pulse laser is modulated into N light spots, the N light spots are focused in the crystal ingot and distributed in the axial direction of the crystal ingot according to preset depth positions, and all the light spots are parallel to the horizontal direction; all the light spots are scanned at the same time, the scanning surface formed by the same light spot covers the cross section of the single crystal silicon carbide crystal ingot in the horizontal direction, and N laser modified layers are formed after scanning; c, carrying out stress-induced separation on the single crystal silicon carbide crystal ingot in the step B; and D, grinding the cutting surface of the single crystal silicon carbide wafer. According to the high-efficiency and low-loss preparation method of the single-crystal silicon carbide wafer, the preparation efficiency of the silicon carbide wafer is improved, meanwhile, the material loss of the single-crystal silicon carbide ingot is reduced, and the yield of the single-crystal silicon carbide ingot is improved.

The invention relates to the technical field of semiconductor material growth, and aims to solve the technical problems that the service life of a heating element is shortened due to single atmosphere sharing, the quality is difficult to guarantee due to many crystal defects, the single crystal production cost is high, and the production efficiency is low in the prior art. The invention discloses a single crystal growth device which is characterized by comprising a furnace body, a first chamber, a second chamber, a heating assembly, a growth assembly, an atmosphere isolation and heat conduction assembly, an atmosphere management system and a central control system, the atmosphere isolation and heat conduction assembly is used for separating the furnace body into a first cavity and a second cavity which are isolated in an airtight mode, and efficient heat transfer is achieved. By the adoption of the scheme, atmosphere structure separation and combined crucible design can be achieved, high quality and high purity of crystals are guaranteed, meanwhile, the service life of a heating element is effectively prolonged, and the operation cost is remarkably reduced.

The invention belongs to the technical field of lithium ion battery materials, and discloses a preparation method of a high-first-effect small-particle single-crystal ultrahigh-nickel ternary positive electrode material. The method comprises the following steps: firstly, uniformly mixing an ultrahigh nickel ternary precursor with a lithium source and a tungsten source, performing mechanical densification and pressing to obtain a blocky solid, and then performing four-section program temperature control calcination to obtain a target material. The interface fusion resistance of single crystal growth can be reduced through mechanical densification; a part of the tungsten element forms a Li2WO4 coating layer, and a part of the dopant phase replaces Ni < 2 + >, so that grain growth can be inhibited, a crystal structure can be stabilized, and the first effect is improved; and the microstructure of the material can be accurately regulated and controlled through four-section temperature-controlled calcination. Through a coating-doping-single crystallization synergistic strategy, the electrochemical performance of the material in liquid and sulfide-based all-solid-state batteries is remarkably improved, the process is controllable, and the application prospect is wide.

The invention discloses a Bridgman method growth gallium oxide single crystal abnormity detection method based on multi-mode perception, and relates to the technical field of single crystal preparation, and the method comprises the following steps: S1, collecting optical signals of a melt surface area in a Bridgman method growth gallium oxide single crystal process through a sensor array, synchronously acquiring temperature field data or infrared thermal image data of the region; the method comprises the following steps: acquiring an original spectral data set covering a local area according to a radiation signal under a micron-order spatial resolution, and obtaining initial radiation distribution information; according to the anomaly detection method for growing the gallium oxide single crystal by the Bridgman method based on multi-mode perception, dynamic tracking and accurate positioning of component anomaly in the growth process of the Bridgman method are realized, and an effective technical means is provided for improving the growth quality of the gallium oxide single crystal, reducing crystal defects and improving the process control capability.

The invention discloses a high-voltage single-crystal positive electrode material as well as a preparation method and application thereof, and belongs to the technical field of lithium ion batteries. The preparation method comprises the following steps: by taking MOFs (Metal Organic Frameworks) with a porous structure as a template, loading a ternary precursor in pore channels of the template by adopting a solvothermal method to prepare loaded MOFs; mixing the loaded MOFs with a lithium source, carbonizing and calcining in an inert atmosphere for high-temperature solid-phase reaction, carbonizing the template to form a nitrogen-doped porous carbon skeleton, and converting the ternary precursor into single-crystal NCM particles to prepare a calcined product; sequentially carrying out acid pickling, drying and airflow crushing treatment on the calcined product to obtain a composite material; the composite material is sequentially subjected to multi-section penetration type dry coating and sintering treatment, the high-voltage single-crystal positive electrode material is prepared, and the high-voltage single-crystal positive electrode material can balance the capacity, the cycle life and the safety under high voltage.

The invention belongs to the technical field of semiconductors, and particularly relates to a preparation method of a single-crystal-on-silicon thin film product and the thin film product. The method comprises the following steps: high-temperature oxidation: feeding a support wafer into a high-temperature vertical furnace for high-temperature oxidation; fusing and bonding: fusing and bonding the device wafer and the support wafer to form a first bonded wafer; the first bonding wafer is preprocessed to obtain a second bonding wafer, the first bonding wafer is placed on a multi-point support, a force F perpendicular to the surface of the first bonding wafer is applied to the upper portion of the corresponding fulcrum, and F ranges from 0.5 N to 3 N; low-temperature annealing: carrying out low-temperature annealing on the second bonding wafer at 100-300 DEG C to obtain a third bonding wafer; and thinning treatment: carrying out thinning treatment on the third bonding wafer to obtain a single crystal film product on silicon. According to the method, the stress damage problem of the single crystal film product on the semiconductor silicon is solved, the generation probability of wafer surface defects is reduced, and the yield of the single crystal film product on the silicon is improved.

The invention discloses a single crystal blade manufacturing temperature gradient dynamic adjustment and feedback control method. The method comprises the following specific steps: S100, collecting multi-source data in real time; s200, constructing and dynamically updating a digital twin model; s300, dynamically analyzing the temperature gradient demand; s400, self-adaptive temperature gradient adjustment is carried out; and S500, closed-loop feedback control is carried out. According to the method, dynamic precise regulation and control of the temperature gradient are achieved, the limitation of traditional static control is broken through through multi-source data real-time collection and digital twinborn model dynamic updating, dynamic fluctuation in the manufacturing process can be precisely adapted, and it is ensured that the temperature gradient in each manufacturing stage is always in the optimal interval; considering a multi-field coupling effect: integrating a temperature field, a flow field, a solute field and an organization field by a multi-modal coupling simulation model, realizing multi-field collaborative optimization, and improving systematicness and accuracy of temperature gradient adjustment; a closed-loop feedback mechanism guarantees the adjustment effectiveness; and through real-time defect detection and parameter reverse correction, complete closed-loop control is formed.

The invention relates to the field of semiconductor single crystal material preparation processes, and discloses a process method for synergistically recovering indium and germanium from zinc leaching residues and preparing single crystals, which comprises the following steps: mixing a crude extract and a liquid metal solvent, carrying out low-temperature extraction to obtain mixed slurry, carrying out thermal-phase in-situ purification on the mixed slurry, separating a liquid-solid phase by utilizing thermal gradient migration, and carrying out solid-liquid separation on the separated liquid-solid phase. Performing directional solidification and purification to obtain an ultra-clean growth solution; analyzing the indium-germanium proportion of the ultra-clean growth solution, and supplementing pure metal for chemical component calibration; the ultra-clean growth solution with accurate components is used for liquid phase epitaxial growth to obtain single crystals, the thermodynamic principle is used for replacing physical filtration, so that particle heterogeneous nucleation centers are removed, the influence of chemical fluctuation of raw materials is eliminated through a built-in calibration link, and the physically pure growth solution with accurate components is prepared; the industrial preparation of the high-quality single crystal is ensured.

The present description belongs to the technical field of battery materials. Disclosed are a single-crystal ternary positive electrode material, a preparation method therefor, a positive electrode sheet and a battery. The apparent factor of the single-crystal ternary positive electrode material is [Formula 1], wherein 1.1≤Z≤3, x=D90 / D10, 2≤x≤5; S(D90) is the number averaged circularity, the total number of target particles is n, and the number averaged circularity is defined as the sum of circularity values of all of the target particles divided by n. The area and circumference corresponding to a two-dimensional projection image of a single target particle are respectively S1 and l1, the circumference of a circle having the area S1 is l2}, and the circularity = l2 / l1. The D10' is the corresponding particle size of a material obtained by compacting the single-crystal ternary positive electrode material at 200 MPa, D10 does not exceed 2.4 μm, and D10' does not exceed 2.3 μm. The single-crystal ternary positive electrode material has smooth surfaces and rounded edges, which are beneficial for fabricating batteries having excellent electrochemical properties.

The present application belongs to the field of diamond preparation, and discloses a high-quality single-crystal diamond preparation method for removing polycrystal defects. Through screen printing and plasma-assisted etching, the (100) surface around the black point-shaped polycrystal is directionally etched by cerium oxide, and a square groove is etched. Then, the slurry of iron oxide or nickel oxide is printed by screen printing, the black point-shaped polycrystal is covered with the slurry, and the black point-shaped polycrystal is removed by plasma-assisted etching. Then, the etched groove is filled by a horizontal growth process, so that the growth defects can be removed, and high-quality single-crystal diamond can be obtained. The present application can greatly reduce the waste rate of single-crystal diamond products and improve the utilization rate of single-crystal diamond. The present application is beneficial to saving production cost and improving efficiency.

The invention provides a single crystal furnace crystal pulling ending parameter control method and system based on adaptive regulation, and the method comprises the steps: collecting production data and parameter data of an ending starting point through a distributed sensor network and a processing equipment interface, and processing the data to obtain current state data of a crystal; and performing similarity comparison on the current state data of the crystal to obtain initial process parameters of the ending stage, and deducing and predicting state expectation evolution data of the crystal in the ending process based on the current state data of the crystal and the initial process parameters. According to the method, through the synergistic effect of full-state perception, foresight deduction, risk quantification and self-adaptive regulation and control, the bubble capture risk index is stably controlled to be 0.5 or below, the stability of a solid-liquid interface in the ending stage is improved, the technological process is not affected by the experience level of operators, and the optical uniformity consistency between batches is greatly improved.

Provided are a position identification method, a position identification device, and a position identification program capable of identifying, from a change in an obtained diffraction image, the position of a structure that becomes a cause of damage such as a crack in a sample in a single-crystal state. This position identification method for identifying the position of a target structure in a sample comprises: a step for vertically irradiating the surface of a sample S1 in a single-crystal state with white X-rays R10; a step for acquiring a diffraction image generated by irradiation; and a step for moving the position of irradiation on the surface of the sample S1. With the method, a parallel position of the target structure is identified on the basis of diffraction images acquired by repeatedly performing the series of steps from the vertical irradiation to the movement.

The invention belongs to the technical field of monocrystalline silicon production, and particularly relates to a single crystal furnace tail gas purification and recovery device which comprises a tail gas collecting pipe, the output end of the tail gas collecting pipe is fixedly connected with a box body, the interior of the box body is divided into a cooling cavity and two filtering cavities through a partition plate, and the two filtering cavities are symmetrically arranged; by arranging the power mechanism, the two gas inlet mechanisms and the impurity removal mechanism can be driven to operate, the two gas inlet mechanisms can input tail gas and backwashing gas into the two filter cavities correspondingly, meanwhile, the filter cavity input with the tail gas can close the connected impurity removal mechanism, and the filter cavity input with the backwashing gas can open the connected impurity removal mechanism; and the two filtering cavities can operate and work at the same time, the tail gas is alternately filtered through the two filtering cavities, therefore, the tail gas can be continuously filtered, and the tail gas recycling efficiency can be improved.

A crystal pulling method and system for fabricating a large-diameter silicon single crystal, and a silicon single crystal and a medium. The method can comprise: performing global two-dimensional simulation on a crystal pulling process, and acquiring a global temperature distribution, a velocity field distribution and an initial solid-liquid interface value during the crystal pulling process under a preset crystal pulling apparatus and a preset crystal pulling parameter; on the basis of the global temperature distribution and the velocity field distribution, determining a boundary condition, and on the basis of the boundary condition, performing local three-dimensional simulation on the crystal pulling process to determine a target solid-liquid interface value; adjusting the preset crystal pulling parameter until the initial solid-liquid interface value is equal to the target solid-liquid interface value within a threshold range, and using the adjusted preset crystal pulling parameter as a reference crystal pulling parameter; on the basis of the reference crystal pulling parameter, simulating and calculating a simulated defect during the crystal pulling process; on the basis of the simulated defect, iteratively optimizing the reference crystal pulling parameter until the simulated defect meets a preset condition, and using the optimized reference crystal pulling parameter as a target crystal pulling parameter; and fabricating a defect-free silicon single crystal.

The invention discloses a single crystal blade directional solidification process real-time closed-loop optimization method and casting equipment, and the method comprises the steps: S1, constructing a multi-physical field numerical simulation model to simulate a simulation temperature field in a directional solidification process; s2, arranging a temperature sensor at a key part of the actually poured single crystal blade to obtain an actually measured temperature field; s3, inputting the simulated temperature field and the actually measured temperature field into an extended Kalman filter to update model parameters of the multi-physical field numerical simulation model; s4, extracting solidification process characteristic parameters from the corrected multi-physical field numerical simulation model, inputting the solidification process characteristic parameters into a pre-trained machine learning model, and predicting a mixed crystal tendency probability; s5, optimizing process parameters of directional solidification by adopting a self-adaptive genetic algorithm by taking miscellaneous crystal tendency probability minimization as a target function; and S6, the optimized technological parameter set is issued to an execution mechanism, the directional solidification process is controlled to achieve closed-loop adjustment, and the steps S2 to S6 are executed circularly.

The invention discloses preparation and application of a millimeter-scale high-uniformity bastnaesite single crystal electron probe standard sample, and the preparation method comprises the following steps: taking CeF3 and carbonate as raw materials, carrying out solid phase mixing, carrying out a hydrothermal reaction at 400-500 DEG C under water self-generated saturated vapor pressure, and carrying out programmed cooling, washing and drying to obtain a CeCO3F single crystal which has a millimeter-scale size and does not contain Nd and other rare earth impurities. The spectrum peak overlapping interference in EPMA analysis is eliminated from the source, the internal elements are highly uniformly distributed, and the relative standard deviation (RSD) of the distribution of the key element Ce is less than 1.0%. The method is simple in process, low in cost and mild in condition, the limitation that millimeter-level single crystals are difficult to prepare through a traditional method is broken through, and the obtained single crystal standard sample has the advantages of being high in crystallinity, good in stability, high in matching degree with a natural geological sample matrix and the like, is suitable for electron probe analysis, especially high-precision quantitative analysis of rare earth element Ce and has good application prospects. And the accuracy and reliability of an analysis result can be effectively improved.

The invention discloses a Czochralski silicon single crystal growth process diameter detection system and method based on machine vision. The system comprises an optical data acquisition module, an image processing module, a core detection module and a control output module. The method comprises the following steps: firstly, acquiring a growth image of a crystal in a single crystal furnace through an obliquely mounted CCD (Charge Coupled Device) camera, and synchronously acquiring furnace temperature data and a nominal diameter of the crystal; searching an optimal solution of dynamic multi-region segmentation through a dynamic multi-threshold segmentation unit, extracting a highlight halo from a background, and reconstructing an edge detection model through a four-direction fractional order differential operator; an improved parallel chord center line theorem is adopted to obtain an ellipse center, and a two-stage optimization strategy is adopted to obtain an ellipse diameter; and finally, an effective detection result is output to a control system, and a data packet is uploaded in real time through the industrial Internet of Things gateway. The method is high in measurement precision, high in measurement efficiency and short in consumed time, online detection of the diameter of the 300mm-level crystal is realized, and core technical support is provided for closed-loop control of crystal growth.

The invention provides a single-crystal cobalt-free lithium-rich manganese-based positive electrode material as well as a preparation method and application thereof. The preparation method comprises the following steps: mixing a cobalt-free lithium-rich manganese-based precursor material, a lithium source and a grain boundary separation auxiliary agent to obtain a mixed material; the mixed material is subjected to two-stage sintering, the two-stage sintering comprises first sintering and second sintering in sequence, and the single-crystal cobalt-free lithium-rich manganese-based positive electrode material is obtained, wherein primary crystal grains of the cobalt-free lithium-rich manganese-based precursor material are of a sheet structure. According to the invention, the cobalt-free lithium-rich manganese-based precursor material of which the primary crystal grains are of a sheet structure is taken as a raw material, and under the action of the grain boundary separation auxiliary agent, a two-stage sintering process is cooperatively matched, so that the single-crystal cobalt-free lithium-rich manganese-based positive electrode material which is uniform in grain size, high in dispersity, complete in crystal grains and continuous in interface is obtained, and the cobalt-free lithium-rich manganese-based positive electrode material is not only suitable for a liquid lithium ion battery, but also suitable for a lithium ion battery. The material is more suitable for a solid-state lithium ion battery, and the electrochemical performance of the battery is effectively improved.

The invention discloses a method for improving the oxidation resistance of nickel-based superalloy, and belongs to the technical field of metal material surface modification. Based on the high-energy transient effect of laser shock waves, the method mainly comprises the key steps of alloy surface pretreatment, laser shock peening process implementation, post-treatment and the like. Specifically, firstly, the surface of the nickel-based single crystal alloy is subjected to pretreatment such as polishing and cleaning, surface defects and pollutants are removed, and the treatment quality is guaranteed; then, according to the material characteristics and performance requirements of the nickel-based single crystal alloy, laser parameters such as laser energy, pulse width and light spot diameter are accurately set, and proper restraint layer and absorption layer materials are selected; then, high-energy pulse laser is utilized to irradiate the absorption layer, high-temperature and high-pressure plasma is induced to be generated, the plasma expands and explodes to generate strong shock waves, the shock waves act on the alloy surface, the surface material is subjected to severe plastic deformation, a residual compressive stress layer with the depth capable of reaching hundreds of micrometers is formed, meanwhile, surface grains are refined, and the microstructure is optimized; and after the strengthening treatment is completed, simple cleaning and performance detection post-treatment are carried out. Through laser shock strengthening, a special organization structure with high density and low defect density is formed on the surface of the nickel-based single crystal alloy, diffusion and invasion of oxygen atoms are effectively hindered, and the oxidation resistance of the alloy is remarkably improved. According to the method, the controllability of technological parameters is high, the strengthening effect can be accurately regulated and controlled, the treatment process is free of pollution and high in efficiency, the obtained strengthened nickel-based single crystal alloy can be widely applied to the fields such as aerospace engine hot end parts and nuclear energy equipment which have strict requirements for high-temperature oxidation resistance, the reliability of related parts is greatly improved, and the service life of the related parts is greatly prolonged.

The invention discloses a solidification melting zone thermal compensation repairing device and method for adjusting a heat source mode, and belongs to the technical field of metal part repairing. In the traditional Gaussian laser single crystal repairing process, columnar crystal orientation isometric crystal transformation can be induced due to the violent heat dissipation effect on the top of a molten pool and the component supercooling effect of the solidification front edge, new crystal grains preferentially nucleate and grow on the top of the molten pool, and the mixed crystal defect on the top of a repairing layer is caused. The scheme that annular laser is adopted as main laser, a thermal compensation auxiliary laser beam and a zoom laser beam expander are added for cooperative regulation and control is provided, the temperature gradient and the cooling speed of a molten pool are controlled by accurately adjusting a heat source energy distribution mode, the tendency of columnar crystal orientation isometric crystal transformation is restrained, and the quality of the molten pool is improved. And mixed crystal defects at the top of the repair layer are eliminated. Compared with an existing method, the method is large in process window and good in parameter adaptability; the material application range is wide, and the repairing requirements of different alloy systems can be met; equipment adjustment is simple, and industrial application is easy to achieve.

A 3D semiconductor device including: a first level including a single crystal layer, a memory control circuit, a first metal layer, a second metal layer, and a third metal layer; connection of the first transistors comprises the first, and / or the second, and / or the third metal layer; a fourth metal layer disposed atop third transistors disposed atop second transistors disposed atop said first level; a memory array including word-lines and at least four memory mini arrays which include at least four rows by four columns of memory cells, each of the memory cells includes at least one of the second transistors (at least one with a metal gate) or at least one of the third transistors; a connection path from the fourth metal to the third metal including a via disposed through the memory array; the memory control circuit includes first transistors and voltage regulators.