11264 results about "Single crystal" patented technology

The invention relates to the field of pressure sensors, in particular to a pressure sensor and a processing method, and a chip comprises a silicon substrate, a silicon dioxide dielectric layer, a device layer, a metal electrode and packaging glass. The device layer comprises a silicon carbide single crystal device layer and a silicon device layer; the silicon carbide single crystal device layer is arranged on the silicon device layer; the silicon device layer, the silicon dioxide dielectric layer and the silicon substrate are connected in sequence; the device layer is etched to form a sensitive resistor device layer, an annular sealing region and a micro-channel; the sensitive resistance device layer is isolated from the annular sealing area through the micro-channel; the device layer, the silicon dioxide dielectric layer and the silicon substrate are etched to form a cross beam etching area; the silicon substrate is etched to form a silicon pressure cavity and a beam film; the metal electrode is arranged on the top of the device layer; and the packaging glass anode is bonded at the top of the device layer or the bottom of the silicon substrate so as to solve the problems of low high temperature resistance and low sensitivity of the MEMS pressure sensor.

The present invention provides, at low cost, a laminated substrate which is to be used in a device and is equipped with a heat sink material which exhibits excellent thermal conductivity. The laminated substrate is equipped with a three-layer structure comprising: a device substrate comprising at least one type of single crystal material selected from the group consisting of Si, SiC, GaN, AlN, BN, Ga2O3, Cr2O3, LiTaO3, and LiNbO3; a metal layer on the device substrate; and a diamond layer on the metal layer.

The invention relates to the technical field of fluorescence sensing development, in particular to a Cd (II)-based metal organic framework crystalline material as well as a preparation method and application thereof. The chemical formula of the Cd (II)-based metal organic framework crystalline material is {[Cd3 (H2O) 2 (DMA) 2 (5-CMOIA) 2]. 6 / 5H2O} n, the organic framework material is characterized by an X-ray single crystal diffractometer, and the result shows that the organic framework material is crystallized in a triclinic system P-1 space group, the asymmetric unit of the organic framework material is composed of three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions and three The complex is composed of two deprotonated (5-CMOIA) 3-ligands, two coordinated DMA solvent molecules, two coordinated water molecules and six fifths of crystal water molecules. The solid fluorescence spectrum of the Cd (II)-based metal organic framework crystalline material is measured, the fluorescence response of the Cd (II)-based metal organic framework crystalline material to metal ions in a solution is explored, and the result shows that the Cd (II)-based metal organic framework crystalline material can effectively recognize Hg < 2 + > from different ions and can be applied to the field of fluorescence sensing.

The invention belongs to the technical field of material preparation. The invention provides a porous tantalum carbide ceramic as well as a preparation method and application thereof, the preparation method comprises the following steps: mixing tantalum powder and / or tantalum carbide powder with tantalum salt and an organic ligand source in a liquid phase system, rapidly cooling to form a solid, vacuumizing and sintering the obtained solid, and carbonizing to obtain the porous tantalum carbide ceramic. According to the preparation method, an organic ligand source provides a ligand, so that the ligand and tantalum form a metal organic framework structure, pores and distribution are adjusted, pore forming is realized through further decomposition or volatilization at a high temperature, and finally, the prepared porous silicon carbide ceramic has disordered micron-sized pores, and when the porous silicon carbide ceramic is applied to preparation of single crystal silicon carbide through a physical vapor deposition method, the pore forming efficiency is improved. Compared with a traditional graphite material, the graphite material can allow gaseous substances generated by silicon carbide to pass through, is resistant to high temperature and high in strength, does not participate in reaction, does not generate impurities entering crystals or forming carbon wrapping and the like, and effectively achieves the filtering effect.

The invention belongs to the technical field of crystal processing, and relates to a method for obtaining a single crystal diamond (111) surface wafer by using double-pulse-width laser. Femtosecond laser and picosecond laser are adopted for machining and stripping the blocky single crystal diamond to obtain a first crystal face (111), then femtosecond laser and picosecond laser are continuously adopted for machining and stripping the remaining blocky single crystal diamond, and the blocky single crystal diamond is obtained; the process for obtaining the crystal face (111) comprises the following steps of: scanning femtosecond laser on the crystal face (111) to process a plurality of graphitization modification lines which are full of the crystal face (111) and are parallel to each other, wherein the graphitization modification lines are parallel to the crystal orientation of a diagonal line [110] of the crystal face (001); carrying out scanning processing along the graphitization modification line by utilizing picosecond laser, so as to form a leap crack on the basis of the graphitization modification line of the crystal face (111); and then stripping is carried out. By means of the method, the wafer with the complete (111) face can be obtained through cutting in the ultra-thick (001) CVD monocrystal diamond.

The invention provides a single-crystal-like dense iron phosphate material and a preparation method thereof.The iron phosphate material is prepared through the following steps that S1, a certain amount of pure water is added into a reaction kettle for bottoming, a ferrite solution and a phosphorus salt solution are added at the temperature of 30-60 DEG C, and ferrous phosphate slurry A is obtained; s2, carrying out solid-liquid separation and washing treatment on the ferrous phosphate slurry A to obtain a ferrous phosphate filter cake; s3, pulping the ferrous phosphate filter cake with pure water, uniformly stirring, transferring into a reaction kettle, continuously stirring, heating, mixing a phosphoric acid solution and a hydrogen peroxide solution, and adding to obtain white slurry B; and S4, carrying out solid-liquid separation, washing treatment and flash evaporation drying on the white slurry B to obtain iron phosphate dihydrate, and calcining the iron phosphate dihydrate to obtain the monocrystal-like dense iron phosphate material with the high iron-phosphorus ratio. When the iron phosphate provided by the invention is matched with conventional iron phosphate to prepare lithium iron phosphate, the quantity ratio of small-particle lithium iron phosphate can be effectively controlled.

The invention provides a piezoelectric device and a preparation method thereof. The piezoelectric device comprises a substrate material layer; the single crystal seed layer is arranged on the substrate material layer, and the single crystal seed layer is made of a six-membered ring structure carbon material; the electrode layer is arranged on the single crystal seed layer; and the single crystal piezoelectric film is arranged on the electrode layer. According to the preparation method of the piezoelectric device, the cost is lower, the material price is lower, the film deposition efficiency is higher, and the crystal structure of the single crystal piezoelectric film is more stable.

A 3D semiconductor device including: a first level including a single crystal layer and a memory control circuit including first transistors and a redundancy control circuit; a first metal layer overlaying the single crystal layer; a second metal layer overlaying the first metal layer; a third metal layer overlaying the second metal layer; second transistors disposed atop the third metal layer with at least one including a metal gate; third transistors disposed atop the second transistors; a fourth metal layer atop the third transistors; a memory array including word-lines and at least four memory mini arrays, each including at least four rows by four columns of memory cells, each of the memory cells includes at least one of the second transistors or at least one of the third transistors; a connection path from the fourth metal to the third metal including a via disposed through the memory array.

The invention relates to the technical field of new energy aluminum alloy precision casting multi-modal quality monitoring, in particular to a new energy aluminum alloy precision casting multi-modal quality monitoring device and method. According to the technical scheme, the new energy aluminum alloy precision casting multi-mode quality monitoring device comprises a quality monitoring device body, an infrared thermal imager probe, a germanium single crystal protection lens, an integrated spectrometer probe debugging port, an acoustic detection microphone array and a honeycomb acoustic shielding cover. An infrared thermal imager probe is arranged on one side of the quality monitoring device main body, and a germanium single crystal protection lens is arranged on the outer side of the infrared thermal imager probe; synchronous acquisition and fusion analysis of multi-physical field data are realized by integrating six modes of spectrum, infrared thermal imaging, vibration, machine vision, acoustics and pressure deformation, and meanwhile, when the shrinkage risk is predicted by the infrared thermal imaging, a die-casting process compensation mechanism is automatically triggered to kill defects in the germination stage, so that the defect rate is greatly reduced.

The invention relates to the field of welding equipment. The invention discloses automatic welding equipment for a single crystal furnace and a using method of the automatic welding equipment, and aims to solve the problem that after the equipment is used for welding the external joint of a furnace body and a top accessory, a clamp needs to be unlocked, and then the inner wall of the furnace body and the inner wall of the top accessory are welded. The welding device is composed of an inner side supporting and welding mechanism and an outer side supporting and welding mechanism. According to the automatic welding equipment for the single crystal furnace and the using method thereof, the lower sleeve is driven to move downwards and abut against the top face of the hollow rotating disc through extension of the air cylinder, the sliding block is driven to move downwards and slide in the sliding groove along with continuous extension of the air cylinder, and then the bearing is driven to move downwards; a first spring telescopic rod at the lower end of a pressing rod is pushed through downward movement of a bearing to extrude a hinged plate to deflect, then an L-shaped clamping plate is pushed to move towards the side away from the pressing rod and is internally supported on the inner walls of the ring and the single crystal furnace body, it is guaranteed that the central axis of the ring is coaxial with the central axis of the single crystal furnace body, and follow-up welding is facilitated.

The invention provides a method for determining the volatilization behavior of antimony, a silicon single crystal rod, a silicon wafer and a solar cell, and the method comprises the steps: determining the volatilization behavior of antimony in a leading and releasing stage and / or an equal-diameter stage: in the leading and releasing stage, pulling out a small end from molten silicon; the total feeding amount and the initial antimony concentration are obtained; the mass, the phosphorus-antimony concentration and the phosphorus concentration of the small head are obtained; according to the total feeding amount, the phosphorus-antimony concentration, the initial antimony concentration and the phosphorus concentration, the volatilization amount of antimony in the small end pulling stage is calculated; in the equal-diameter stage, the actual resistivity of the silicon rod at multiple positions is obtained; converting the actual resistivity at the plurality of positions into actual phosphorus and antimony concentrations; acquiring the actual phosphorus concentration at each position; calculating the actual antimony concentration at each position according to the actual phosphorus-antimony concentration and the actual phosphorus concentration; and according to the actual antimony concentration, the effective segregation coefficient of antimony, the initial phosphorus concentration and the solidification fraction, the volatilization coefficient of antimony in the equal-diameter stage is fitted. By means of the method, the volatilization behavior of antimony in the single crystal pulling process can be determined.

The invention relates to the technical field of semiconductor material preparation, and provides a method for controlling the resistivity of a fifth main group element doped crystal bar, crystal pulling time is distinguished in different crystal pulling stages, the volatilization coefficient of doped elements in different time periods is adjusted, the volatilization amount of the doped elements in each time interval is calculated more accurately, and the resistivity of the doped crystal bar is controlled. Therefore, the amount of doping elements required for controlling the resistance can be calculated more accurately, the resistance of the crystal bar can be adjusted more effectively and more accurately, the resistance difference between the head and the tail of the single-crystal crystal bar can be better reduced, meanwhile, through timely adjustment of the control process of the grade and the ending volatilization amount, the supplementary doping condition in the crystal pulling process is defined, and the crystal pulling efficiency is improved. And the resistance hit rate of the crystal bar is improved, and the head and tail resistance difference is reduced, so that the resistivity of each part of the crystal bar is accurately controlled, and the consistency of subsequent silicon wafer product quality is ensured.

The invention relates to the field of microelectronic manufacturing, and discloses a high-performance monocrystalline silicon nano wafer manufacturing process which comprises the following steps: preparing a monocrystalline silicon wafer, and obtaining a high-quality monocrystalline silicon wafer through fine cutting, chemical mechanical polishing and surface residual stress elimination treatment; multi-stage cleaning and surface treatment are carried out, and surface pollutants are removed through combination of molecular chromatography, electric field assisted ultrasonic cleaning and low-temperature plasma cleaning; and manufacturing a nano structure, and forming a complex nano structure by adopting multi-stage electron beam lithography, segmented reactive ion etching and self-adaptive deep etching regulation and control. The surface quality, the mechanical strength and the electrical property of the wafer are remarkably improved through the technologies of refined monocrystalline silicon wafer preparation, multi-stage cleaning, advanced nanostructure manufacturing, self-adaptive heat treatment and the like; and through surface functionalization and multi-layer high-precision packaging, the environmental tolerance and long-term reliability of the nanostructure are enhanced.

The invention discloses an actuator structure and a liquid spraying device comprising the same, the actuator structure comprises a vibrating membrane, a piezoelectric material, a lower electrode and an upper electrode, the top surface and the bottom surface of the piezoelectric material are respectively connected to the upper electrode and the lower electrode, the vibrating membrane is connected to the bottom surface of the lower electrode, and the upper electrode is connected to the bottom surface of the piezoelectric material. The piezoelectric material is a single crystal piezoelectric film material. The liquid spraying device comprises the actuator structure. According to the actuator structure and the liquid spraying device comprising the actuator structure, the piezoelectric material is processed and manufactured by using the single crystal piezoelectric film material, so that the single crystal piezoelectric film material can be processed by using a wet etching technology, the problems in a dry etching process are effectively avoided, the preparation precision of the actuator structure is ensured, and the manufacturing cost of the actuator structure is reduced. The stability of the actuator structure is improved, and the manufacturing cost of the actuator structure is reduced.

Disclosed is a cutting path planning algorithm for semiconductor workpiece based on image processing, belonging to the technical field of image calculation, and solving the technical problem of manually cutting off the heterocrystal region on the wafer, which includes the following steps: 1, obtaining a semantic boundary of an image; 2, finding a largest inscribed rectangle MRect in the single crystal image X1; 3. dividing the contour region in the single crystal region to find the corresponding cutting line; 4. determining the final cutting line. The cutting line planned by the application may realize automatic cutting of the wafer, and may better reserve the required single crystal region.

The invention relates to a crystal bar axial resistivity control method and device, and the method comprises the steps: predicting the first antimony evaporation capacity of a crystal pulling equal-diameter process in an antimony-phosphorus co-doped single crystal furnace according to the incidence relation between the evaporation constant in the antimony-phosphorus co-doped single crystal furnace and the excess material weight, and controlling the antimony-phosphorus doping ratio of the equal-diameter process according to the first antimony evaporation capacity; according to the incidence relation between the evaporation constant and the lead-discharge duration, the second antimony evaporation capacity in the crystal pulling lead-discharge process in the antimony-phosphorus co-doped single crystal furnace is predicted, and the antimony-phosphorus doping proportion in the lead-discharge process is controlled according to the second antimony evaporation capacity; and according to the target re-feeding evaporation calculation model, predicting a third antimony evaporation capacity in a re-feeding stage in the antimony-phosphorus co-doped single crystal furnace, and controlling an antimony-phosphorus doping ratio in the re-feeding stage according to the third antimony evaporation capacity, so that the axial resistivity uniformity of the crystal bar obtained by straight pulling is within a target range. At least the uniformity of axially doped elements in monocrystalline silicon can be improved in the crystal pulling process, and the uniformity of the axial resistivity of a crystal bar is improved.

The invention belongs to the technical field of silicon carbide single crystal materials, and particularly relates to a growth device of large-size silicon carbide single crystals and a preparation method of the silicon carbide single crystals, porous graphite cylinders are arranged in a powder area of the growth device of the large-size silicon carbide single crystals, and the porous graphite cylinders are distributed along the edge of the powder area to the center in a stepped mode. The height is gradually increased from the edge to the center; a plurality of layers of stacked graphite pore plates are arranged at the top of the powder area, the upper end parts of the porous graphite cylinders are flush with the upper surfaces of the corresponding layers of graphite pore plates, and the porous graphite cylinders penetrate through the graphite pore plates, so that a continuous gas phase transmission channel from the powder area to the crystal growth area is formed. According to the invention, the plurality of porous graphite cylinders are arranged in the silicon carbide raw material area in a stepped manner, so that the temperature field distribution of the raw material area is stabilized, the gas phase layout is optimized, impurities in gas phase components are filtered, and the defects of microtubes, inclusions, dislocation and the like in crystals are improved.

A substrate processing system includes a carry-in / out unit in which a cassette accommodating therein multiple substrates is carried in and out; a batch processing unit configured to process a lot including the multiple substrates at once; a single-wafer processing unit configured to process the substrates one by one; a first interface unit configured to distribute the substrates to the single-wafer processing unit or the batch processing unit; and a second interface unit configured to transfer the substrates between the batch processing unit and the single-wafer processing unit. The first interface unit includes a first placement unit configured to place therein the substrates before and after being processed by the single-wafer processing unit; a second placement unit configured to place therein the substrates before being processed by the batch processing unit; and a transfer device configured to transfer the substrates to the first placement unit and the second placement unit.

The invention discloses a ternary magnetic selenide and a preparation method of a single crystal of the ternary magnetic selenide, and relates to the technical field of crystal material preparation. The chemical formula of the ternary magnetic selenide is VCrSe3, and the ternary magnetic selenide can be prepared by taking a vanadium source, a chromium source and a selenium source in a specific proportion as raw materials and an iodine source as a transport agent through a chemical vapor transport method. The crystal structure of the VCrSe3 single crystal is a monoclinic phase (I2 / m), and phase transformation from antiferromagnetic to ferromagnetic and spin reorientation occur at low temperature, so that the VCrSe3 single crystal has application potential in the fields of spintronics, optoelectronics and the like; the large-size and high-quality VCrSe3 single crystal prepared by the method can provide a material for intrinsic physical property research and development of functional devices such as optoelectronic devices and spinning electrons.

Disclosed is a method for monolithic integration preparation of a full-color nitride semiconductor micro light-emitting diode (micro-LED) array. The method includes preparing a composite conductive substrate; overlaying an insulating template onto the composite conductive substrate to prepare a template substrate; overlaying monocrystalline graphene onto the template substrate in a completely aligned manner to obtain a customized template graphene substrate including graphene array units, wherein one blue-region graphene array element, one green-region graphene array element, and two red-region graphene array elements in each graphene array unit have surface properties different from each other; then performing an in-situ process to epitaxially grow a vertical-structure all-nitride material, to obtain a full-color micro-LED array epitaxial wafer by one-step in-situ process; finally, performing packaging and preparing a transparent electrode, to obtain a vertical-structure full-color nitride micro-LED array with top light emission.

A substrate processing system that continuously performs a batch process to collectively perform a plurality of substrates, and a single-wafer process to process substrates one by one, the substrate processing system including: a batch processing apparatus that performs the batch process; at least one single-wafer processing apparatus that performs the single-wafer process on a batch-processed substrate; a relay transport mechanism provided between a loading position and an unloading position, and capable of transporting substrates in a horizontal orientation one by one to the unloading position along a substrate transport path; and a rotation adjustment mechanism including a turntable capable of adjusting the position of a notch on each of the substrates in the horizontal orientation by rotating the substrates one by one on the loading position side or at the unloading position.

The invention provides a preferred orientation single crystal lithium-rich manganese-based positive electrode material, a preparation method thereof and a lithium ion battery, and relates to the technical field of battery positive electrode material preparation. The lithium-rich manganese-based positive electrode material is in a single crystal morphology, and in a diffraction pattern obtained by adopting an XRD (X-Ray Diffraction) instrument taking Cu K alpha as an incident light source, the peak intensity ratio I (003) / I (104) gt of a (003) peak of which 2 theta is positioned at 18.6 + / -0.1 degrees to a (104) peak of which 2 theta is positioned at 44 + / -0.5 degrees; 2. The single crystal lithium-rich manganese-based material with the specific crystal face preferentially growing is prepared, the material preferentially grows along the (003) crystal face by regulating and controlling the synthesis process of the material, the electrochemical performance of the material can be remarkably improved, and especially the stability under the high-rate charging and discharging condition can be remarkably improved.

The invention discloses a high-nickel ternary positive electrode material as well as a preparation method and application thereof. The chemical formula of the positive electrode material is LixNiyCozMaNbOc, M is at least one of Mn and Al, N is at least one of Ti, V, Nb, Zr, Ta, W or Mo, x is larger than or equal to 0.9 and smaller than 1.2, y is larger than or equal to 0.6 and smaller than or equal to 0.95, 0 lt, and z is larger than or equal to 0.5. Z < = 0.2, 0lt; a < = 0.2, 0 < b < = 0.02, and values of x, y, z, a, b and c accord with an electrically neutral principle; the positive electrode material has a single crystal morphology, the average size of primary particles is 0.20-1.50 microns, and the c / a ratio in lattice parameters is greater than 4.9360. The positive electrode material is applied to a positive electrode of a lithium ion battery, and shows good first coulombic efficiency and charge-discharge capacity.

The invention relates to the field of Czochralski single crystal furnace crystal bar production, in particular to a Czochralski single crystal shouldering control system, which comprises a CCD (Charge Coupled Device) information acquisition unit, a computer information storage processing unit and a PLC (Programmable Logic Controller) growth regulation unit, the computer information storage processing unit receives information acquired by the CCD information acquisition unit, then performs cloud data storage processing and outputs single crystal shoulder information of a corresponding time node to the PLC growth regulation unit, and the PLC growth regulation unit performs shouldering cooling amount control, automatic crucible lifting intervention in the shouldering process, automatic intervention control of equal-diameter liquid opening distance and pulling speed control. According to the method, the problems of shouldering line breakage and equal-diameter head line breakage caused by the fact that automatic regulation of the current shouldering pulling speed does not conform to actual growth of crystals are solved, and the consistency of field process parameter management is improved.

The invention provides a three-dimensional neutron diffraction data processing method and system for a single crystal material, and the method comprises the steps: carrying out the rough scanning of a single crystal sample through a pole figure mode, and determining the rotation center of a single crystal sample signal; performing fine scanning at the rotation center to obtain a three-dimensional neutron diffraction signal; decomposing the three-dimensional neutron diffraction signal to obtain a diffraction peak curve and a rocking curve plane; correcting the coordinates of the rocking curve plane; decomposing the corrected rocking curve plane to obtain a rocking curve; and according to the diffraction peak curve and the rocking curve, quantitatively analyzing interplanar spacing and orientation distribution information in the three-position diffraction signal. The method can realize nondestructive characterization of the internal microstructure of the single crystal material, provides accurate data support for research of lattice strain distribution and orientation characteristics, and can realize synchronous characterization analysis of lattice spacing and orientation distribution information.

The invention discloses a method for obtaining a crystal face (111) in a (001) CVD (Chemical Vapor Deposition) monocrystal diamond, which comprises the following steps of: fixing the monocrystal diamond, enabling femtosecond laser to be vertical to the crystal face (001) of the monocrystal diamond, and scanning by taking the crystal orientation of a diagonal line [110] of the crystal face as a preset path, so that a graphitized modified line is formed in the monocrystal diamond; forming a leap crack along a crystal face (111); pulling force is applied to the single-crystal diamond, so that the single-crystal diamond is separated in the crack direction, and a diamond stripping block is obtained; and cleaning the stripping surface of the diamond stripping block to obtain the crystal face (111) of the monocrystal diamond. As the crystal face (111) is an easy-cleavage face, striding cracks along the crystal face (111) can be formed in the diamond. The crystal face (111) of the single crystal diamond can be obtained in a short time, cold ablation processing of the interior of a material can be achieved in an ultra-short time, and the method has the advantages of being high in efficiency, low in loss, low in cost, capable of simplifying polishing and the like.

The invention belongs to the technical field of lithium batteries, and discloses a lithium nickel manganese oxide positive electrode material, a preparation method thereof and a lithium ion battery. Wherein the lithium nickel manganese oxide positive electrode material has a regular truncated octahedron single crystal structure, and the ratio K of a (111) crystal face orientation parameter to a (100) crystal face orientation parameter in an XRD (X-Ray Diffraction) spectrogram of the lithium nickel manganese oxide positive electrode material is 1-1.6. The lithium nickel manganese oxide positive electrode material provided by the invention has excellent rate capability and cycling stability, and can be well applied to production and manufacturing of lithium ion batteries.

The invention relates to the field of batteries, and discloses a single crystal type lithium-rich manganese-based positive electrode material and a preparation method thereof, a lithium ion battery positive plate and a lithium ion battery, and the preparation method comprises the following steps: carrying out first sintering on a first part of lithium source and a nickel-manganese-containing multi-element precursor according to a molar ratio of 0.2-1: 1 to obtain an intermediate with a spinel structure; a first part of lithium source and the intermediate of the spinel structure are sintered for the first time according to the molar ratio of 0.5-1.4: 1, a second part of lithium source and the intermediate of the spinel structure are sintered for the second time according to the molar ratio of 0.5-1.4: 1, the single crystal type lithium-rich manganese-based positive electrode material is obtained, and the molar ratio of the total amount of the first part of lithium source and the second part of lithium source to the multi-element precursor containing nickel and manganese is larger than 1.25. And the primary particles are relatively large in size, so that the positive electrode material has excellent structural stability and has no cracks in crystals, and the lithium ion battery prepared from the positive electrode material has excellent volume specific capacity and cycling stability.

The invention belongs to the field of battery materials, and discloses a high-entropy high-nickel positive electrode material which comprises a base material LiNixCoyMzO2, a base further comprises a lithium-site doping element and a nickel-site doping element, the surface of the base is coated with an island-shaped coating layer, and the island-shaped coating layer is a nano metal oxide layer. The preparation method comprises the following steps: uniformly mixing a high-nickel hydroxide precursor, a lithium source, a compound containing an element A and a compound containing an element B, carrying out two-stage sintering, mixing with a metal oxide containing an element C and a metal oxide containing an element D, and sintering to obtain the high-entropy high-nickel positive electrode material. Lithium doping in a bulk phase of the high-entropy high-nickel positive electrode material can improve the electronic conductivity of a single crystal material, increase the interlayer spacing of transition metal and inhibit lithium and nickel positive ions from being mixed, and nickel doping can improve the structural stability and thermal stability of the material, inhibit irreversible phase change of H2-H3 and stabilize lattice oxygen of the material; the doping modification of the two sites further improves the performance of the material.

A method of preparing a silicon-on-insulator structure includes forming an epitaxial silicon layer on a front surface of a single crystal silicon donor substrate, forming a dielectric layer on the epitaxial silicon layer to thereby form an epitaxial donor structure including the single crystal silicon donor substrate, the epitaxial silicon layer, and the dielectric layer, bonding the dielectric layer of the epitaxial donor structure to a front surface of a handle structure, the handle structure including a single crystal semiconductor handle substrate, to thereby form a bonded structure including the handle structure, the dielectric layer, the epitaxial silicon layer, and the single crystal silicon donor substrate, and removing the single crystal silicon donor substrate and a portion of the epitaxial silicon layer from the bonded structure to thereby form the silicon-on-insulator structure including the handle structure, the dielectric layer, and a silicon device layer.