5290 results about "Single crystal" patented technology

The invention relates to the technical field of new energy aluminum alloy precision casting multi-modal quality monitoring, in particular to a new energy aluminum alloy precision casting multi-modal quality monitoring device and method. According to the technical scheme, the new energy aluminum alloy precision casting multi-mode quality monitoring device comprises a quality monitoring device body, an infrared thermal imager probe, a germanium single crystal protection lens, an integrated spectrometer probe debugging port, an acoustic detection microphone array and a honeycomb acoustic shielding cover. An infrared thermal imager probe is arranged on one side of the quality monitoring device main body, and a germanium single crystal protection lens is arranged on the outer side of the infrared thermal imager probe; synchronous acquisition and fusion analysis of multi-physical field data are realized by integrating six modes of spectrum, infrared thermal imaging, vibration, machine vision, acoustics and pressure deformation, and meanwhile, when the shrinkage risk is predicted by the infrared thermal imaging, a die-casting process compensation mechanism is automatically triggered to kill defects in the germination stage, so that the defect rate is greatly reduced.

A silicon carbide source material structure for use in a sublimation system for growing single crystal silicon carbide is provided. The silicon carbide source material structure may comprise a first layer and a second layer, the first layer being different from the second layer in at least one property.

The invention provides a space measurement and analysis method and system for a neutron diffraction rocking curve of a single crystal material, and the method comprises the steps: S1, building a laboratory coordinate system and a sample coordinate system, and setting a test point grid; s2, collecting a two-dimensional diffraction image of each test point to obtain angle information of the test point; s3, integrating the angle information of the test points based on the test point grid, and preprocessing the two-dimensional diffraction image; s4, extracting key structure parameters of each test point based on the preprocessed two-dimensional diffraction image; s5, constructing a stress field according to the key structure parameters; and S6, constructing a distribution map of crystal internal lattice parameters in a three-dimensional space according to the stress field. The method provided by the invention effectively improves the capability of identifying the non-uniformity and local distortion of the crystal structure, can be widely applied to the fields of residual stress evaluation, defect evolution monitoring, material quality control and the like, and has a remarkable engineering application value.

The invention discloses a single crystal turbine blade crystal orientation defect detection system based on adaptive optics, particularly relates to the field of nondestructive testing, and is used for solving the problem that thermal damage and signal consistency are difficult to consider in acoustic imaging of complex structural parts. Through partition energy threshold setting, dynamic pulse planning, photoacoustic processing and unified coordinate cross-subarea data synthesis, local thermal damage caused by excessive concentration of energy is effectively avoided in the material detection process, and the requirement for collecting high-bandwidth signals can be met in a large range. The signal-to-noise ratio and the detection efficiency are improved by regulating and controlling pulse energy and a scanning path, the amplitude comparability and the image coherence among regions are ensured through signal normalization correction and subregion image set splicing, high-resolution and comprehensive-coverage acoustic mapping is output, the crystal orientation defects of the single crystal turbine blade are positioned and evaluated, the detection precision is improved, the measurement period is shortened, and the method is suitable for large-scale popularization and application. And the method has an applicable value for aero-engine parts requiring rapid and high-precision nondestructive detection.

The invention discloses a diamond film and a preparation method and application thereof, and the preparation method comprises the steps: taking a substrate material matched with the lattice constant of a diamond film material as a substrate, and carrying out the surface treatment of the substrate; mixed reaction gas comprising 80%-95% of hydrogen, 3%-8% of methane and 2%-12% of auxiliary gas is introduced, wherein the auxiliary gas comprises at least one of argon, chlorine, hydrogen fluoride and hydrogen chloride; carrying out controlled chemical vapor deposition at 850-1000 DEG C under the pressure of not less than 21 kPa, and growing a diamond film on the surface of the substrate; and annealing the diamond film. According to the method, chemical vapor deposition is controlled through cooperation of auxiliary gas and temperature-pressure gradient, and non-corrosion high-speed growth of the high-purity monocrystal diamond film is achieved; in combination with a dynamic annealing process, lattice defects are effectively repaired, the comprehensive performance is optimized, and the reliability of the thin film serving as a heat dissipation component and other applications is remarkably improved.

The present invention relates to multi-stake underwater transducers and arrays for the generation and reception of sound waves in water. The invention provides the design and fabrication of compact piston-type underwater transducers of low-to-mid operating frequency made of piezoelectric single crystals without the need of any pre-stress mechanism. The invention uses a multi-stake pipe-like motor section made of piezoelectric single crystals of high transverse mode piezoelectric coefficients and low acoustic impedance, and small-diameter and light head mass(es). The present invention also discloses various means of increasing the bandwidth of the multi-stake underwater transducers as well as derivative transducers and arrays made of them, including compact 2D and 3D omni-directional transducers, planar, conforming and shaped arrays of various designs, high-density arrays and low-drop-down-ratio parametric arrays of either single or dual frequency bands.

The invention provides a method for preparing an iron-based superconducting material single crystal in a microgravity environment, and belongs to the field of superconducting materials. The method specifically comprises the following steps: carrying out a microgravity crystal growth experiment in a high-temperature experiment cabinet of a space station, putting a solid-phase sintered or pre-melted rod-like raw material into a furnace body, heating and melting, then slowly solidifying, and finally growing the iron-based superconducting material single crystal with large size and extremely low defect density.

The invention discloses a method for estimating the boundary shear stress of a salt rock single crystal sliding face, belongs to the technical field of geotechnical engineering mechanics and material mechanics, and establishes a frame capable of directly estimating the boundary shear stress of the salt rock single crystal sliding face based on the Hall-Pearch theory. The mapping from the measurable macromechanical parameters to the boundary shear stress of the microcosmic single crystal slippage surface is realized. The method only needs conventional cold pressing preparation, EBSD grain size data and uniaxial compression test results, and does not need to depend on high-cost FIB microcolumn compression or in-situ nanoindentation tests. The method can provide more accurate material mechanical parameters for salt cavern design, creep stability analysis and underground engineering safety evaluation, and has good engineering applicability and wide engineering application prospects.

The invention discloses a grinding and polishing processing method of an ultra-precise YIG (yttrium iron garnet) single crystal, which is suitable for a planar YIG (yttrium iron garnet) single crystal (circle) prepared by a liquid phase epitaxy method, a molten salt method and a floating zone melting method, and comprises the following steps: grinding the YIG single crystal, and controlling the thickness and the total thickness deviation (TTV) of the crystal; rough polishing is carried out on the YIG single crystal, and subsurface damage of the wafer is eliminated; and finally, carrying out ultra-precision polishing on the YIG crystal to realize surface planarization with sub-nano-scale surface roughness. According to the method, the surface roughness of the yttrium iron garnet single crystal can be controlled below 1nm.

The invention discloses a super-large-scale silicon single crystal growth method based on a high-temperature superconducting magnetic control technology, and relates to the technical field of silicon single crystal growth, and the method comprises the following steps: setting and calibrating an initial magnetic field intensity, and combining a gradient graphite felt heat conductivity coefficient function to optimize temperature field uniformity; a dynamic magnetic field regulation and control mechanism is introduced in the melt stage, melt convection is inhibited through flow velocity-magnetic field joint control, and oxygen concentration monitoring is synchronized; a multi-physics coupling simulation and multi-objective optimization algorithm is adopted in the crystal growth stage, the magnetic field intensity, the heating power and the crystal pulling parameters are adjusted in real time, and the oxygen content and the growth rate are balanced; and the tail stress is relieved through a gradient field reduction technology, and finally, the low-defect and high-uniformity silicon single crystal is obtained. Melt flow and temperature field uniformity are accurately regulated and controlled through a high-temperature superconducting magnetic control technology, dynamic monitoring and a multi-target optimization algorithm are combined, the growth quality of silicon single crystals is remarkably improved, the defect rate and energy consumption are reduced, and meanwhile efficient and stable production of large-size crystals is achieved.

A semiconductor device includes a foundation layer and a transistor layer. The foundation layer is based on single-crystalline silicon carbide and includes a current propagation region of a first conductivity type and a non-depletable shielding structure of a second conductivity type. The transistor layer is based on epitaxially grown single-crystalline silicon carbide and includes a transistor cell (TC) configured to control a current through the current propagation region. The transistor layer is formed on the foundation layer after formation of the shielding structure in the foundation layer such that an epitaxial interface forms between the transistor foundation layer and the layer. The current propagation region extends from the epitaxial interface between neighboring partial regions of the shielding structure. Along a vertical line orthogonal to the epitaxial interface and through a pn junction between the shielding structure and a region of the first conductivity type in the transistor layer, a net dopant concentration changes by at least 1e17 1 / cm3 per 0.1 μm at the position of the pn junction.

The invention relates to the technical field of batteries, in particular to a composite positive electrode material and a preparation method and application thereof. A composite positive electrode material comprises a positive electrode base material, the chemical formula of the positive electrode base material is LimNixCoyMnzQaRdO2, m is larger than or equal to 1 and smaller than or equal to 1.2, and xlt is larger than or equal to 0.5; 1, 0lt; yt; Yt; 0.5, Li comprises a primary Li element and a secondary Li element, Q is a primary doping element, 0 lt; a < = 0.5, R is a secondary doping element, and 0 < d < = 0.5; x + y + z + a + d = 1, and the doping depth h of the secondary doping element meets 0 lt; h is less than or equal to 850nm; and the particle sizes D10, D50 and D90 of the positive electrode base material meet the condition that (D90-D10) / D50 is more than or equal to 0.8 and less than or equal to 1.15. According to the composite positive electrode material, the phenomena of enrichment of doping elements on the surface of a single crystal and non-uniform lithiation in the single crystal can be relieved, so that the capacity and the cycling stability of the positive electrode material are improved.

The invention belongs to the technical field of nickel-based single-crystal superalloy materials, and provides a nickel-based single-crystal superalloy and a strengthening method thereof, and the method comprises the following steps: cleaning and drying the nickel-based single-crystal superalloy to be strengthened; strengthening parameters and a shock strengthening path are set, and the nickel-based single crystal high-temperature alloy is subjected to absorption-layer-free laser shock strengthening; the strengthened nickel-based single crystal high-temperature alloy is cleaned and dried; polishing parameters and a polishing path are set, femtosecond laser oblique incidence polishing is conducted on the strengthened area of the nickel-based single crystal superalloy, and surface ablation is removed; the polished nickel-based single crystal high-temperature alloy is cleaned and dried; according to the method, the nickel-based single crystal superalloy is strengthened by adopting an absorption-layer-free laser shock strengthening mode, and femtosecond laser oblique incidence polishing is adopted, so that the procedures of pasting and removing an absorption layer for multiple times are avoided, the processing efficiency of laser shock strengthening is improved, and deterioration of the surface quality of a material caused by laser ablation is avoided.

The present application relates to the field of additive manufacturing, and discloses a simulation method for determining a laser powder bed fusion printing process for single-crystal austenitic stainless steel. The simulation method comprises the following steps: S1, establishing a three-dimensional polycrystalline powder bed microstructure model; S2, establishing a three-dimensional temperature field prediction model on the basis of a finite element method; S3, establishing a three-dimensional polycrystalline microstructure evolution model by using a phase-field method; and, S4, coupling the models from steps S1, S2 and S3, and simulating a multi-layer, multi-pass laser powder bed fusion process by using different process parameters, so as to determine appropriate single-crystal process parameters. The present invention replaces conventional trial-and-error experimental methods with numerical simulation methods to determine single-crystal process parameters, thereby greatly reducing the time and economic costs of process exploration, and assisting experiments in revealing the microstructure evolution mechanism of single crystal preparation via laser powder bed fusion additive manufacturing.

The invention discloses a semiconductor structure, a manufacturing method thereof and electronic equipment. The manufacturing method comprises the following steps: forming a first stack structure on a semiconductor substrate; forming a horizontal opening in the first region of the first stack structure, and forming a first vertical opening exposing the semiconductor substrate and a second vertical opening not exposing the semiconductor substrate at two sides of the first region; epitaxially growing using the first vertical opening to form a single crystal active pattern in the horizontal opening; a transistor is formed based on the active pattern. The process difficulty of forming the single crystal active pattern can be reduced, the defect that holes exist in the active pattern can be avoided or reduced, and the electrical performance of the transistor can be improved.

This application provides a crystal growth method and crystalline silicon, relating to the field of solar photovoltaic technology. The method comprises: performing a leak test on a single crystal furnace under a first furnace pressure; adding a dopant to the single crystal furnace under a second furnace pressure; wherein the second furnace pressure is greater than the first furnace pressure; and performing a crystal pulling process after adding the dopant. This application can reduce axial concentration distribution differences of doping elements in doped single crystal silicon, improve axial resistivity uniformity of the single crystal silicon, and enhance production efficiency.

The invention discloses a ternary positive electrode material, a preparation method thereof and an electrochemical device. The preparation method comprises the following steps: mixing a continuous ternary precursor, a lithium source and an aluminum source, and carrying out first sintering to obtain a first sintered product; the primary sintering product is subjected to secondary sintering and dispersion, a single-crystal base material is obtained, the base material comprises a plurality of primary particles, the average size of the primary particles ranges from 2 micrometers to 3 micrometers, and the median particle size Dv50 of the primary particles ranges from 3 micrometers to 5 micrometers; mixing the matrix material with an aqueous solution of lithium phosphate, and carrying out wet coating to obtain a coated product; and sintering the coated product for the third time, so that the lithium phosphate forms a coating layer on the surface of the matrix material, and the ternary positive electrode material is obtained. According to the invention, through two-parameter control of the average size and the median particle size of the matrix material and simultaneous aluminum element internal doping and lithium phosphate surface coating of the matrix material, the structural stability and the cycle performance of the ternary positive electrode material are improved and the service life of the ternary positive electrode material is prolonged through a synergistic effect.

The invention discloses a preparation method of a carbon-coated single-crystal sodium ferric pyrophosphate positive electrode material, which is specifically implemented according to the following steps: step 1, dissolving sodium salt, ferric salt and phosphate in deionized water in proportion, then adding a carbon source into the solution, and uniformly stirring to obtain a mixed solution; step 2, fully drying the mixed solution obtained in the step 1 to obtain precursor powder; and 3, carrying out heat treatment on the precursor powder in a protective atmosphere, and cooling to obtain the carbon-coated single-crystal sodium ferric pyrophosphate positive electrode material. The invention also discloses a coating prepared by the method, a single-crystal structure is combined with uniform carbon coating, grain boundary defects are eliminated, conductivity is improved, high specific capacity and long cycle life are realized, single-crystal growth and carbon layer in-situ coating are synchronously realized by a synthesis process, and structural integrity and efficient conductive network construction can be ensured.

The invention discloses a nickel-based single-crystal high-temperature alloy with high structure stability and a preparation method thereof, and relates to the technical field of high-temperature alloys. The nickel-based single crystal high-temperature alloy provided by the invention is prepared from the following components in percentage by mass: 5 to 7 percent of Al, 7.5 to 10 percent of Co, 5 to 7 percent of Cr, 0.1 to 0.2 percent of Hf, 0 to 2 percent of Mo, 5.5 to 7.5 percent of Ta, 0 to 1 percent of Ti, 8 to 10 percent of W, 0.02 to 0.05 percent of C, 0.003 to 0.005 percent of B and the balance of Ni. According to the invention, by controlling the ratio of elements and avoiding the addition of Re, the precipitation temperature of a harmful TCP phase is obviously reduced to about 840 DEG C on the basis of maintaining a sufficient solid solution strengthening effect, and the long-term stability of the structure is greatly improved. The high-temperature mechanical property of the alloy provided by the invention reaches the level equivalent to that of a traditional Re-containing second-generation single-crystal alloy and is remarkably superior to that of foreign Re-free single-crystal alloys MD2 and Rene N500, and the nickel-based single-crystal high-temperature alloy with high structure stability successfully realizes the unification of low cost and high performance, and is suitable for industrial production. And a reliable material solution is provided for manufacturing the heavy-duty gas turbine blade with higher market competitiveness.

The invention discloses a gate dielectric film growth process, an HEMT (High Electron Mobility Transistor) device and a preparation method, and the gate dielectric film growth process comprises the steps: executing a primary process cycle of atomic layer deposition, and forming an amorphous gate dielectric film on the surface of a substrate; after the primary process circulation is completed, in-situ gas plasma treatment is executed, a single crystal gate dielectric film converted from the amorphous gate dielectric film after treatment is obtained, and when the single crystal gate dielectric film is formed between a metal gate and a barrier layer of the HEMT device, the interface state of the metal gate at a gate groove can be improved, the quality of a contact interface below gate metal is improved, and the performance of the HEMT device is improved. And the defect density and the electron trapping effect are reduced, so that the problems of serious influence on safe operation of the device and even grid degradation caused by grid leakage and threshold voltage drift after stress of the device can be effectively avoided, and the performance of the device is improved.

The invention provides a czochralski silicon single crystal growth process multivariable monitoring method, and belongs to the technical field of czochralski silicon single crystal growth. Comprising the following steps: synchronously acquiring and pre-processing various process variable time sequence data in a czochralski silicon single crystal growth process to obtain a multivariable time sequence matrix; performing slow feature extraction on the multivariable time sequence matrix by using a multi-scale sliding window strategy, and sequentially constructing a static slow feature matrix and a dynamic slow feature matrix; the static slow feature vector and the dynamic slow feature vector of each time step are spliced into a fusion slow feature vector, all the fusion slow feature vectors form a fusion slow feature matrix, and the fusion slow feature matrix is divided into a fusion training set and a fusion test set; and constructing an auto-encoder network model, and training and testing the auto-encoder network model to obtain a multivariable monitoring result. According to the invention, accurate real-time monitoring of the growth process of the czochralski silicon single crystal in a complex environment can be realized.

The present invention provides a single-crystal lithium-rich manganese-based positive electrode precursor and its preparation method and application. The single-crystal lithium-rich manganese-based positive electrode precursor comprises secondary particles formed by primary particles and satisfies the following relationship: 1.2μm≤D50≤1.8μm, 0.5μm≤D R <6.0μm, 0.5g / cm 3 ≤α≤0.8g / cm 3 , 30m 2 / g≤β≤50m 2 / g, 22≤α·β≤28, 20nm≤N≤45nm, 5≤M / N≤10, wherein D50 is the median particle size of the secondary particles, D R is the particle size of the secondary particles, α is the tap density of the secondary particles, β is the specific surface area of ​​the secondary particles, N is the average thickness of the primary particles, and M is the average length of the primary particles. The median particle size of the secondary particles of the single-crystal-like lithium-rich manganese-based positive electrode precursor provided by the present invention is no more than 1.8 μm, which is significantly lower than the reported particle size of (quasi) single-crystal lithium-rich positive electrode precursors. The precursor can be made into a submicron-level single-crystal-like lithium-rich manganese-based positive electrode material with excellent dispersibility.

The invention belongs to the technical field of photoelectric detection, and discloses a molybdenum ditelluride / nickel ditelluride heterojunction-based photoelectric detector and a preparation method and application thereof, and the molybdenum ditelluride / nickel ditelluride heterojunction-based photoelectric detector is prepared by stripping single crystal molybdenum ditelluride onto an oxide layer silicon substrate through a mechanical stripping method to obtain a molybdenum ditelluride nanosheet; a nickel ditelluride nanosheet is obtained through a chemical vapor deposition method; the molybdenum ditelluride nanosheet is transferred to the nickel ditelluride nanosheet through a PVA dry transfer method to form an overlapped part, and a molybdenum ditelluride / nickel ditelluride heterojunction is formed; and preparing electrodes at two ends of the molybdenum ditelluride / nickel ditelluride heterojunction through electron beam evaporation or thermal evaporation. The photoelectric detector utilizes a built-in electric field generated by a two-dimensional material heterojunction interface to effectively improve the photoelectric conversion efficiency and response speed of a visible light wave band.

The invention discloses a single crystal furnace magnetic field intensity measuring device and method. The device comprises an upper supporting disc, a lower supporting disc and a longitudinal adjusting mechanism, an inner gear ring is arranged on the lower end face of the lower supporting disc, a rotating disc meshed with the inner gear ring is rotationally installed on the lower end face of the lower supporting disc, a magnetic field intensity probe is eccentrically installed on the lower end face of the rotating disc, and a driving wheel meshed with the rotating disc is rotationally installed in the center of the lower end face of the lower supporting disc and can drive the rotating disc to rotate along the inner gear ring when rotating; the upper supporting disc is arranged right above the lower supporting disc; the longitudinal adjusting mechanism comprises a power part and a driving rod; the lower end of the driving rod is rotationally connected with the upper end face of the lower supporting disc, and the upper end of the driving rod penetrates through the upper supporting disc to be connected to the power part which can drive the lower supporting disc to longitudinally reciprocate. According to the invention, by controlling the magnetic field intensity probe to descend gradually and assisting the magnetic field intensity probe to rotate along the single crystal furnace body and form autorotation, the magnetic field intensity at a plurality of point positions at the same height is measured, so that the measurement accuracy is improved.

The invention discloses a silicon single crystal growth interface deformation detection method, system, equipment and medium, and relates to the technical field of silicon single crystal growth soft measurement modeling. Comprising the following steps: acquiring a process parameter set in a silicon single crystal production process; the process parameters in the process parameter set serve as nodes, mutual information indexes between the nodes serve as edges, and a graph structure model is constructed; performing multi-layer neighborhood aggregation operation on the graph structure model to obtain initial features; performing attention mechanism operation on the initial features to obtain aggregated features; and carrying out weighting operation on the aggregation characteristics by adopting a long-short-term memory network to obtain a deformation detection result of the silicon single crystal growth interface. According to the method, the modeling expressive power of a complex dynamic process is improved, and the sensitivity and the response speed of an abnormal deformation evolution trend are also remarkably enhanced.

The invention provides a preparation method of a MoTe2 single crystal. The preparation method comprises the following steps: A, weighing molybdenum powder, tellurium powder and cobalt powder according to a stoichiometric ratio; b, the powder weighed in the step A is poured into a glass beaker, convective mixing is achieved under the action of a stirrer, and the duration time is 20-30 minutes; c, pouring the powder ground in the step B into a crucible, and sealing; d, putting the crucible in the step C into a glass tube; e, covering the glass tube in the step D with a glass cap; f, vacuumizing the glass tube by using a vacuum pump set, then filling argon, repeating the gas washing process for three times, and then vacuumizing again; g, aligning the middle position of the glass cap, heating to melt the tube wall of the glass tube and the glass cap together, and completing vacuum sealing; and H, putting the glass tube in the step G into a box-type furnace, sintering, taking out, putting into a water bucket, and quenching to obtain a single crystal sample.

The invention discloses a high-efficiency low-loss preparation method of a single crystal silicon carbide wafer. The method comprises the following steps: A, grinding the surface of a single crystal silicon carbide ingot; b, the ultrafast pulse laser is modulated into N light spots, the N light spots are focused in the crystal ingot and distributed in the axial direction of the crystal ingot according to preset depth positions, and all the light spots are parallel to the horizontal direction; all the light spots are scanned at the same time, the scanning surface formed by the same light spot covers the cross section of the single crystal silicon carbide crystal ingot in the horizontal direction, and N laser modified layers are formed after scanning; c, carrying out stress-induced separation on the single crystal silicon carbide crystal ingot in the step B; and D, grinding the cutting surface of the single crystal silicon carbide wafer. According to the high-efficiency and low-loss preparation method of the single-crystal silicon carbide wafer, the preparation efficiency of the silicon carbide wafer is improved, meanwhile, the material loss of the single-crystal silicon carbide ingot is reduced, and the yield of the single-crystal silicon carbide ingot is improved.

The invention relates to the technical field of semiconductor material growth, and aims to solve the technical problems that the service life of a heating element is shortened due to single atmosphere sharing, the quality is difficult to guarantee due to many crystal defects, the single crystal production cost is high, and the production efficiency is low in the prior art. The invention discloses a single crystal growth device which is characterized by comprising a furnace body, a first chamber, a second chamber, a heating assembly, a growth assembly, an atmosphere isolation and heat conduction assembly, an atmosphere management system and a central control system, the atmosphere isolation and heat conduction assembly is used for separating the furnace body into a first cavity and a second cavity which are isolated in an airtight mode, and efficient heat transfer is achieved. By the adoption of the scheme, atmosphere structure separation and combined crucible design can be achieved, high quality and high purity of crystals are guaranteed, meanwhile, the service life of a heating element is effectively prolonged, and the operation cost is remarkably reduced.

The invention discloses a preparation method and application of a fluorine-doped and carbon-coated synergistically modified lithium-rich manganese-based single-crystal positive electrode material based on PVDF (polyvinylidene fluoride). The preparation method comprises the following steps: S1, preparing a transition metal salt solution, a NaOH aqueous solution and a NH3.H2O solution; s2, the transition metal salt solution, NaOH and NH3.H2O solutions are pumped into a reaction kettle at the same time, the pH value of the reaction is controlled and kept at 11.0-11.2, and a [NixMny] (OH) 2 precursor is obtained; s3, pre-sintering the [NixMny] (OH) 2 precursor at the temperature of 500 DEG C; and S4, mixing the sintered [NixMny] (OH) 2 precursor with PVDF and a lithium source according to a stoichiometric ratio, and carrying out secondary roasting in a nitrogen atmosphere to obtain the F-doped lithium-rich manganese-based polycrystalline positive electrode material with relatively loose combination. S5, the prepared lithium-rich manganese-based polycrystalline positive electrode material is crushed in an airflow crusher, and the lithium-rich manganese-based monocrystalline positive electrode material Li < 1.2 > Ni < x > Mn < y > O < 2-x > F < x > (at) C with both carbon coating and fluorine doping is obtained; the prepared Li < 1.2 > Ni < x > Mn < y > O < 2-x > F < x > (at) C is used for preparing a positive pole piece, and the positive pole piece is applied to a lithium ion battery.

A 3D semiconductor device including: a first level with first transistors, a single-crystal layer and at least one metal layer which includes interconnects between the first transistors forming first control circuits with a plurality of sense amplifiers; the first metal layer(s) overlaid by a second metal layer which is overlaid by a second level which includes first memory-cells which include second transistors with a metal-gate, overlaid by a third level which includes second memory cells which include third transistors which control the data written to second memory cells; a fourth metal layer overlaying a third metal layer which overlays the third level; where third transistor gate locations are aligned to second transistor gate locations within greater than 0.2 nm error, the first transistors or the second transistors comprise at least two FinFet transistors, and two of the FinFet transistors each have different threshold voltages.