7759 results about "Single crystal" patented technology

The invention relates to the field of pressure sensors, in particular to a pressure sensor and a processing method, and a chip comprises a silicon substrate, a silicon dioxide dielectric layer, a device layer, a metal electrode and packaging glass. The device layer comprises a silicon carbide single crystal device layer and a silicon device layer; the silicon carbide single crystal device layer is arranged on the silicon device layer; the silicon device layer, the silicon dioxide dielectric layer and the silicon substrate are connected in sequence; the device layer is etched to form a sensitive resistor device layer, an annular sealing region and a micro-channel; the sensitive resistance device layer is isolated from the annular sealing area through the micro-channel; the device layer, the silicon dioxide dielectric layer and the silicon substrate are etched to form a cross beam etching area; the silicon substrate is etched to form a silicon pressure cavity and a beam film; the metal electrode is arranged on the top of the device layer; and the packaging glass anode is bonded at the top of the device layer or the bottom of the silicon substrate so as to solve the problems of low high temperature resistance and low sensitivity of the MEMS pressure sensor.

The invention relates to the technical field of fluorescence sensing development, in particular to a Cd (II)-based metal organic framework crystalline material as well as a preparation method and application thereof. The chemical formula of the Cd (II)-based metal organic framework crystalline material is {[Cd3 (H2O) 2 (DMA) 2 (5-CMOIA) 2]. 6 / 5H2O} n, the organic framework material is characterized by an X-ray single crystal diffractometer, and the result shows that the organic framework material is crystallized in a triclinic system P-1 space group, the asymmetric unit of the organic framework material is composed of three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions and three The complex is composed of two deprotonated (5-CMOIA) 3-ligands, two coordinated DMA solvent molecules, two coordinated water molecules and six fifths of crystal water molecules. The solid fluorescence spectrum of the Cd (II)-based metal organic framework crystalline material is measured, the fluorescence response of the Cd (II)-based metal organic framework crystalline material to metal ions in a solution is explored, and the result shows that the Cd (II)-based metal organic framework crystalline material can effectively recognize Hg < 2 + > from different ions and can be applied to the field of fluorescence sensing.

The invention belongs to the technical field of crystal processing, and relates to a method for obtaining a single crystal diamond (111) surface wafer by using double-pulse-width laser. Femtosecond laser and picosecond laser are adopted for machining and stripping the blocky single crystal diamond to obtain a first crystal face (111), then femtosecond laser and picosecond laser are continuously adopted for machining and stripping the remaining blocky single crystal diamond, and the blocky single crystal diamond is obtained; the process for obtaining the crystal face (111) comprises the following steps of: scanning femtosecond laser on the crystal face (111) to process a plurality of graphitization modification lines which are full of the crystal face (111) and are parallel to each other, wherein the graphitization modification lines are parallel to the crystal orientation of a diagonal line [110] of the crystal face (001); carrying out scanning processing along the graphitization modification line by utilizing picosecond laser, so as to form a leap crack on the basis of the graphitization modification line of the crystal face (111); and then stripping is carried out. By means of the method, the wafer with the complete (111) face can be obtained through cutting in the ultra-thick (001) CVD monocrystal diamond.

The invention provides a piezoelectric device and a preparation method thereof. The piezoelectric device comprises a substrate material layer; the single crystal seed layer is arranged on the substrate material layer, and the single crystal seed layer is made of a six-membered ring structure carbon material; the electrode layer is arranged on the single crystal seed layer; and the single crystal piezoelectric film is arranged on the electrode layer. According to the preparation method of the piezoelectric device, the cost is lower, the material price is lower, the film deposition efficiency is higher, and the crystal structure of the single crystal piezoelectric film is more stable.

A 3D semiconductor device including: a first level including a single crystal layer and a memory control circuit including first transistors and a redundancy control circuit; a first metal layer overlaying the single crystal layer; a second metal layer overlaying the first metal layer; a third metal layer overlaying the second metal layer; second transistors disposed atop the third metal layer with at least one including a metal gate; third transistors disposed atop the second transistors; a fourth metal layer atop the third transistors; a memory array including word-lines and at least four memory mini arrays, each including at least four rows by four columns of memory cells, each of the memory cells includes at least one of the second transistors or at least one of the third transistors; a connection path from the fourth metal to the third metal including a via disposed through the memory array.

The invention relates to the technical field of new energy aluminum alloy precision casting multi-modal quality monitoring, in particular to a new energy aluminum alloy precision casting multi-modal quality monitoring device and method. According to the technical scheme, the new energy aluminum alloy precision casting multi-mode quality monitoring device comprises a quality monitoring device body, an infrared thermal imager probe, a germanium single crystal protection lens, an integrated spectrometer probe debugging port, an acoustic detection microphone array and a honeycomb acoustic shielding cover. An infrared thermal imager probe is arranged on one side of the quality monitoring device main body, and a germanium single crystal protection lens is arranged on the outer side of the infrared thermal imager probe; synchronous acquisition and fusion analysis of multi-physical field data are realized by integrating six modes of spectrum, infrared thermal imaging, vibration, machine vision, acoustics and pressure deformation, and meanwhile, when the shrinkage risk is predicted by the infrared thermal imaging, a die-casting process compensation mechanism is automatically triggered to kill defects in the germination stage, so that the defect rate is greatly reduced.

The invention discloses an actuator structure and a liquid spraying device comprising the same, the actuator structure comprises a vibrating membrane, a piezoelectric material, a lower electrode and an upper electrode, the top surface and the bottom surface of the piezoelectric material are respectively connected to the upper electrode and the lower electrode, the vibrating membrane is connected to the bottom surface of the lower electrode, and the upper electrode is connected to the bottom surface of the piezoelectric material. The piezoelectric material is a single crystal piezoelectric film material. The liquid spraying device comprises the actuator structure. According to the actuator structure and the liquid spraying device comprising the actuator structure, the piezoelectric material is processed and manufactured by using the single crystal piezoelectric film material, so that the single crystal piezoelectric film material can be processed by using a wet etching technology, the problems in a dry etching process are effectively avoided, the preparation precision of the actuator structure is ensured, and the manufacturing cost of the actuator structure is reduced. The stability of the actuator structure is improved, and the manufacturing cost of the actuator structure is reduced.

The invention belongs to the technical field of silicon carbide single crystal materials, and particularly relates to a growth device of large-size silicon carbide single crystals and a preparation method of the silicon carbide single crystals, porous graphite cylinders are arranged in a powder area of the growth device of the large-size silicon carbide single crystals, and the porous graphite cylinders are distributed along the edge of the powder area to the center in a stepped mode. The height is gradually increased from the edge to the center; a plurality of layers of stacked graphite pore plates are arranged at the top of the powder area, the upper end parts of the porous graphite cylinders are flush with the upper surfaces of the corresponding layers of graphite pore plates, and the porous graphite cylinders penetrate through the graphite pore plates, so that a continuous gas phase transmission channel from the powder area to the crystal growth area is formed. According to the invention, the plurality of porous graphite cylinders are arranged in the silicon carbide raw material area in a stepped manner, so that the temperature field distribution of the raw material area is stabilized, the gas phase layout is optimized, impurities in gas phase components are filtered, and the defects of microtubes, inclusions, dislocation and the like in crystals are improved.

A substrate processing system includes a carry-in / out unit in which a cassette accommodating therein multiple substrates is carried in and out; a batch processing unit configured to process a lot including the multiple substrates at once; a single-wafer processing unit configured to process the substrates one by one; a first interface unit configured to distribute the substrates to the single-wafer processing unit or the batch processing unit; and a second interface unit configured to transfer the substrates between the batch processing unit and the single-wafer processing unit. The first interface unit includes a first placement unit configured to place therein the substrates before and after being processed by the single-wafer processing unit; a second placement unit configured to place therein the substrates before being processed by the batch processing unit; and a transfer device configured to transfer the substrates to the first placement unit and the second placement unit.

The invention discloses a ternary magnetic selenide and a preparation method of a single crystal of the ternary magnetic selenide, and relates to the technical field of crystal material preparation. The chemical formula of the ternary magnetic selenide is VCrSe3, and the ternary magnetic selenide can be prepared by taking a vanadium source, a chromium source and a selenium source in a specific proportion as raw materials and an iodine source as a transport agent through a chemical vapor transport method. The crystal structure of the VCrSe3 single crystal is a monoclinic phase (I2 / m), and phase transformation from antiferromagnetic to ferromagnetic and spin reorientation occur at low temperature, so that the VCrSe3 single crystal has application potential in the fields of spintronics, optoelectronics and the like; the large-size and high-quality VCrSe3 single crystal prepared by the method can provide a material for intrinsic physical property research and development of functional devices such as optoelectronic devices and spinning electrons.

The invention provides a preferred orientation single crystal lithium-rich manganese-based positive electrode material, a preparation method thereof and a lithium ion battery, and relates to the technical field of battery positive electrode material preparation. The lithium-rich manganese-based positive electrode material is in a single crystal morphology, and in a diffraction pattern obtained by adopting an XRD (X-Ray Diffraction) instrument taking Cu K alpha as an incident light source, the peak intensity ratio I (003) / I (104) gt of a (003) peak of which 2 theta is positioned at 18.6 + / -0.1 degrees to a (104) peak of which 2 theta is positioned at 44 + / -0.5 degrees; 2. The single crystal lithium-rich manganese-based material with the specific crystal face preferentially growing is prepared, the material preferentially grows along the (003) crystal face by regulating and controlling the synthesis process of the material, the electrochemical performance of the material can be remarkably improved, and especially the stability under the high-rate charging and discharging condition can be remarkably improved.

The invention discloses a high-nickel ternary positive electrode material as well as a preparation method and application thereof. The chemical formula of the positive electrode material is LixNiyCozMaNbOc, M is at least one of Mn and Al, N is at least one of Ti, V, Nb, Zr, Ta, W or Mo, x is larger than or equal to 0.9 and smaller than 1.2, y is larger than or equal to 0.6 and smaller than or equal to 0.95, 0 lt, and z is larger than or equal to 0.5. Z < = 0.2, 0lt; a < = 0.2, 0 < b < = 0.02, and values of x, y, z, a, b and c accord with an electrically neutral principle; the positive electrode material has a single crystal morphology, the average size of primary particles is 0.20-1.50 microns, and the c / a ratio in lattice parameters is greater than 4.9360. The positive electrode material is applied to a positive electrode of a lithium ion battery, and shows good first coulombic efficiency and charge-discharge capacity.

The invention relates to the field of Czochralski single crystal furnace crystal bar production, in particular to a Czochralski single crystal shouldering control system, which comprises a CCD (Charge Coupled Device) information acquisition unit, a computer information storage processing unit and a PLC (Programmable Logic Controller) growth regulation unit, the computer information storage processing unit receives information acquired by the CCD information acquisition unit, then performs cloud data storage processing and outputs single crystal shoulder information of a corresponding time node to the PLC growth regulation unit, and the PLC growth regulation unit performs shouldering cooling amount control, automatic crucible lifting intervention in the shouldering process, automatic intervention control of equal-diameter liquid opening distance and pulling speed control. According to the method, the problems of shouldering line breakage and equal-diameter head line breakage caused by the fact that automatic regulation of the current shouldering pulling speed does not conform to actual growth of crystals are solved, and the consistency of field process parameter management is improved.

The invention provides a three-dimensional neutron diffraction data processing method and system for a single crystal material, and the method comprises the steps: carrying out the rough scanning of a single crystal sample through a pole figure mode, and determining the rotation center of a single crystal sample signal; performing fine scanning at the rotation center to obtain a three-dimensional neutron diffraction signal; decomposing the three-dimensional neutron diffraction signal to obtain a diffraction peak curve and a rocking curve plane; correcting the coordinates of the rocking curve plane; decomposing the corrected rocking curve plane to obtain a rocking curve; and according to the diffraction peak curve and the rocking curve, quantitatively analyzing interplanar spacing and orientation distribution information in the three-position diffraction signal. The method can realize nondestructive characterization of the internal microstructure of the single crystal material, provides accurate data support for research of lattice strain distribution and orientation characteristics, and can realize synchronous characterization analysis of lattice spacing and orientation distribution information.

The invention belongs to the technical field of lithium batteries, and discloses a lithium nickel manganese oxide positive electrode material, a preparation method thereof and a lithium ion battery. Wherein the lithium nickel manganese oxide positive electrode material has a regular truncated octahedron single crystal structure, and the ratio K of a (111) crystal face orientation parameter to a (100) crystal face orientation parameter in an XRD (X-Ray Diffraction) spectrogram of the lithium nickel manganese oxide positive electrode material is 1-1.6. The lithium nickel manganese oxide positive electrode material provided by the invention has excellent rate capability and cycling stability, and can be well applied to production and manufacturing of lithium ion batteries.

The invention belongs to the field of battery materials, and discloses a high-entropy high-nickel positive electrode material which comprises a base material LiNixCoyMzO2, a base further comprises a lithium-site doping element and a nickel-site doping element, the surface of the base is coated with an island-shaped coating layer, and the island-shaped coating layer is a nano metal oxide layer. The preparation method comprises the following steps: uniformly mixing a high-nickel hydroxide precursor, a lithium source, a compound containing an element A and a compound containing an element B, carrying out two-stage sintering, mixing with a metal oxide containing an element C and a metal oxide containing an element D, and sintering to obtain the high-entropy high-nickel positive electrode material. Lithium doping in a bulk phase of the high-entropy high-nickel positive electrode material can improve the electronic conductivity of a single crystal material, increase the interlayer spacing of transition metal and inhibit lithium and nickel positive ions from being mixed, and nickel doping can improve the structural stability and thermal stability of the material, inhibit irreversible phase change of H2-H3 and stabilize lattice oxygen of the material; the doping modification of the two sites further improves the performance of the material.

The invention discloses a micron-resolution boron nitride neutron scintillation screen and a preparation method thereof, and the preparation method comprises the following steps: taking an inch-level sapphire single crystal as a substrate, and selecting an aluminum polar surface as a growth surface; fixing the substrate by using a graphite clamp, putting the substrate and the chemical vapor deposition furnace into a chemical vapor deposition furnace, vacuumizing, and heating the furnace body to a reaction temperature by using a graphite heater; then raw material gas and carrier gas N2 are introduced into the furnace, meanwhile, the graphite clamp and the graphite heater are decomposed at high temperature so as to provide a proper amount of carbon source, and the gas is mixed and reacts to deposit a crystalline boron nitride film on the substrate; and soaking with alcohol to separate the boron nitride film from the substrate, cutting, and fixing on an aluminum plate to prepare the neutron scintillation screen. The boron nitride film is compact and transparent, shows a strong blue light emission characteristic due to carbon defects, and can be used as a micron-resolution neutron scintillation screen. The micron-resolution boron nitride neutron scintillation screen is successfully realized, and the potential of the micron-resolution boron nitride neutron scintillation screen in the aspect of high-resolution neutron imaging is proved.

The invention provides a method for detecting silicon single crystal COP free area distribution, and relates to the technical field of silicon single crystal quality detection.The method comprises the steps that a silicon wafer to be detected is cleaned to obtain a first silicon wafer; uniformly smearing a transition metal ion solution on the surface of the first silicon wafer to obtain a second silicon wafer; placing the second silicon wafer in a high-temperature environment, and performing heat treatment under three temperature gradients to obtain a third silicon wafer; wherein in the first stage, transition metal ions are diffused to the surface layer of the silicon wafer to activate oxygen precipitates in a Pv region, in the second stage, the transition metal ions are promoted to be diffused into the silicon wafer to develop a Pi low-oxygen region, and in the third stage, nuclei coalescence in a B-band region is activated at high temperature to form a differential arrangement ring; cleaning the third silicon wafer through a mixed acid solution to obtain a fourth silicon wafer; and placing the fourth silicon wafer in a preferential corrosion liquid for preferential corrosion, and carrying out COP free area distribution detection on the obtained detection sample wafer. According to the scheme, the definition of each region boundary can be improved, so that the detection accuracy of COP free region distribution is improved.

The invention relates to the technical field of crystal growth, in particular to a mold for growing a gallium oxide single crystal by an edge-defined film-fed growth method and a gallium oxide single crystal growth method. The mold is formed by connecting two partition plates through a fixing part, and a slit is reserved between the partition plates. Steps are arranged on the two radial sides of the top end of the mold, the bottom end of the mold is of an inverted trapezoidal structure, the two waists of a trapezoid are arc-shaped, and the bottom end of the mold is of an inverted trapezoidal structure, so that the temperature difference and temperature gradient of the surface of the mold are reduced, temperature distribution on the two sides of the mold is more symmetrical, and a more reasonable thermal field can be provided for size expansion of gallium oxide crystals.

A silicon carbide source material structure for use in a sublimation system for growing single crystal silicon carbide is provided. The silicon carbide source material structure may comprise a first layer and a second layer, the first layer being different from the second layer in at least one property.

The invention provides a vertical structure ultraviolet photoelectric detector and a preparation method thereof. The ultraviolet photoelectric detector is of a vertical structure, the design facilitates light absorption of the ultraviolet photoelectric detector, the light utilization rate of the ultraviolet photoelectric detector is improved, and compared with a horizontal structure, the transmission distance is shortened, and the cost is low; the ultraviolet photoelectric detector provided by the invention has a relatively high switching ratio of light and dark current and relatively small dark current, and also has a very high response speed under the condition of keeping the switching ratio of light and dark current and the dark current; a PN junction is formed between the nickel oxide hole transport layer and the beta-phase gallium oxide single crystal, so that the ultraviolet photoelectric detector has self-driving performance; in the manufacturing process, the substrate is used as a supporting frame, and the extraction electrode is packaged in one step through the conductive adhesive tape, so that 3-5 photoetching steps of a traditional horizontal structure are omitted, the process is simplified, and the process manufacturing is simpler.

The invention relates to the technical field of analysis and detection, in particular to a micro-area distribution detection method for micro and / or trace component elements in nickel-based single crystal superalloy. According to the method, the conventional common element distribution detection means (EPMA, EDS, TOF-SIMS, TEM and EELS) are combined, the detection limit and the detection advantages are referred, different devices are reasonably utilized by analyzing different phase structure characteristics, quantitative or semi-quantitative element micro-area distribution analysis is quickly and effectively realized, the use requirements on high-precision devices are reduced, and the method is suitable for large-scale popularization and application. And the cost and the test difficulty are greatly reduced.

The present invention provides a single crystal furnace and a single crystal silicon rod annealing method, the single crystal furnace comprises: a main chamber comprising a furnace body and a throat structure located above the furnace body which are connected with each other, and the furnace body is used for forming a single crystal silicon rod; the auxiliary chamber is mounted above the throat structure; the flow guide cover is arranged in the main chamber and located at the throat structure, the flow guide cover comprises a cover body, and the cover body is provided with a middle flow channel allowing the silicon single crystal rod to penetrate through and an annular flow channel surrounding the middle flow channel; the throat structure is provided with an inlet which is communicated with an inlet of the annular flow channel so as to introduce a first fluid into the annular flow channel; an inlet of the middle flow channel is communicated with the auxiliary chamber so as to receive a second fluid introduced from the auxiliary chamber; and an outlet of the annular flow channel is communicated with an outlet of the middle flow channel, so that the first fluid and the second fluid are converged to cool the monocrystalline silicon rod, and the problem that the minority carrier lifetime of monocrystalline silicon is easily shortened by a monocrystalline silicon annealing process in the prior art is solved.

The invention relates to the technical field of electrocatalysis development, in particular to a Co-based two-dimensional coordination polymer electrocatalyst and a preparation method and application thereof. The chemical formula of the Co-based two-dimensional coordination polymer electrocatalyst is {[Co3 (H2O) 4 (5-CMOIA) 2]. 10H2O} n, an X-ray single crystal diffraction test shows that the coordination polymer belongs to a triclinic system and a P-1 space group, and the minimum asymmetric unit of the coordination polymer contains three Co (II) ions, two deprotonated (5-CMOIA) 3-ligands, four coordination water molecules and ten crystal water molecules. The Co-based two-dimensional coordination polymer has relatively high specific surface area and rich active sites, is good in dispersity in a solution, and can be applied to the field of electrocatalysis.

The invention relates to the technical field of process optimization control, in particular to a single crystal furnace crystal pulling process control method and system based on an intelligent optimization algorithm. Identifying to obtain equipment operation parameters and process state variables; obtaining a state estimation value of the controlled medium based on the equipment operation parameter and the process state variable; determining target operation parameters of the controlled equipment according to the technological process and the equipment operation parameters; on the basis of the target operation parameters, expected changes of process state variables are estimated in combination with system dynamic response characteristics, and predicted state variables are obtained; calculating a medium distribution parameter according to the equipment operation parameter, the process state variable and the state estimation value; generating a state prediction value of the controlled medium based on the medium distribution parameter, the target operating parameter and the predicted state variable; and integrating the state estimation value and the state prediction value, and outputting a control instruction for adjusting the execution structure according to a preset adjustment rule. The closed-loop regulation of the controlled medium is realized through the control instruction.

The invention provides a space measurement and analysis method and system for a neutron diffraction rocking curve of a single crystal material, and the method comprises the steps: S1, building a laboratory coordinate system and a sample coordinate system, and setting a test point grid; s2, collecting a two-dimensional diffraction image of each test point to obtain angle information of the test point; s3, integrating the angle information of the test points based on the test point grid, and preprocessing the two-dimensional diffraction image; s4, extracting key structure parameters of each test point based on the preprocessed two-dimensional diffraction image; s5, constructing a stress field according to the key structure parameters; and S6, constructing a distribution map of crystal internal lattice parameters in a three-dimensional space according to the stress field. The method provided by the invention effectively improves the capability of identifying the non-uniformity and local distortion of the crystal structure, can be widely applied to the fields of residual stress evaluation, defect evolution monitoring, material quality control and the like, and has a remarkable engineering application value.

The invention relates to the technical field of diamond epitaxial growth, and discloses an intelligent bias voltage regulation and control method and system for diamond single crystal heteroepitaxial growth, and the system comprises a data acquisition module, a prediction module, an intelligent optimization module, a gradient field compensation module and a feedback and regulation and control module. The future trend is pre-judged by adopting the prediction model, and potential growth abnormality such as nucleation probability reduction in a certain area can be perceived in advance, so that the control system has perspectiveness, and lagging of post passive compensation is avoided; the reinforcement learning controller comprehensively considers an accumulative effect and a long-term target in a strategy optimization process, so that bias voltage regulation and control are more intelligent; the intelligent decision-making capability is far better than that of an adjustment mode of artificial experience or a preset program, so that the growth process has stronger robustness on external disturbance such as airflow fluctuation and discharge state change; in the whole growth process, the consistency of crystal nucleuses and growth rates in all regions is kept, and the accumulation of thermal stress and defects in the large-size thin film can be inhibited.

The invention provides a lithium-rich manganese-based material for an all-solid-state battery as well as a preparation method and application thereof, the preparation method comprises the following steps: mixing and drying a lithium-rich manganese-based carbonate precursor, a dopant and a first solvent to obtain a doped lithium-rich manganese-based carbonate precursor, and then sintering and washing to obtain a pretreated precursor; and carrying out ball milling on the pretreated precursor, mixing with a lithium source, and calcining to obtain the submicron single crystal type lithium-rich manganese-based positive electrode material, and mixing the single crystal type lithium-rich manganese-based positive electrode material, a metal source coating agent and a second solvent, then removing the second solvent, and roasting to obtain the lithium-rich manganese-based material for the all-solid-state battery. According to the preparation method disclosed by the invention, through internal doping of rare earth ions, design of a submicron single crystal structure and surface in-situ coating, the migration speed of lithium ions and the stability of the crystal structure can be improved, side reactions of an interface are reduced, and the stability of the interface is improved.

The invention provides a process for preparing a silicon single crystal rod by a multi-feeding and multi-pulling method. The invention provides a process for preparing monocrystalline silicon by a multi-feeding and multi-pulling method for quantitatively compensating volatile doping elements in a re-feeding stage, which is a method for measuring and calculating the concentration of a volatile doping agent in a residual silicon melt in the re-feeding stage of the multi-feeding and multi-pulling method. Therefore, the purposes of accurately compensating the concentration of the volatile dopant and guaranteeing the quality consistency between crystal bars are achieved. According to the method, the concentration of the volatile dopant in the residual silicon melt in the re-feeding stage can be accurately measured under the condition that a crystal pulling furnace platform is not changed at all; the compensation amount of the volatile dopant in the re-feeding stage can be accurately obtained, and the stable quality of the crystal bar is ensured; meanwhile, auxiliary equipment is not needed, the method is low in cost, good in economical efficiency, suitable for various volatile dopants, wide in application range and suitable for an existing technology for preparing monocrystalline silicon through a multiple-feeding and multiple-pulling method, the technology does not need to be changed, and the production efficiency is high.

The invention provides an ultrahigh-nickel single-crystal positive electrode material and a preparation method and application thereof.The ultrahigh-nickel single-crystal positive electrode material comprises fluxing agent doping elements and high-valence doping elements, the fluxing agent doping elements comprise Zr, Ce, Sr, Y, La, Sn or Na, and the high-valence doping elements comprise Sb, W, Nb, Ta, Mo, Ti or P; the doping amount of the fluxing agent doping element is omega A, the doping amount of the high-valence doping element is omega B, and omega A and omega B meet the following relational expression: 0.5 < 0.746 * exp [-omega B / (0.891 * omega A)] + 0.556 < 1.0. Omega A and Omega B meet a specific relational expression, two doping elements are effectively promoted to play a role, a small-particle-size and uniformly-dispersed single crystal is formed, the material has high stability and safety of the single crystal, a Li < + > diffusion path can be shortened, dynamics can be improved, and the advantage of high capacity can be achieved.