19 results about "Ion bombardment" patented technology

A method for forming a semiconductor device provides a substrate having a patterned structure containing a semiconductor material, wherein the patterned structure has a side profile including depressions, such as a patterned film stack, and a spacer layer conformally deposited on and within the depressions of the patterned structure; and a reaction layer formed on the spacer layer by reacting the surface of the spacer layer with a plasma-excited first etching gas, wherein the plasma-excited first etching gas contains fluorine, hydrogen, and nitrogen to form the reaction layer, and at least a portion of the reaction layer is removed by ion bombardment caused by exposure to a plasma-excited second etching gas. The spacer layer may be SiOCN. The reaction layer may be ammonium silicofluoride. The first etching gas may contain SF6, H2, and N2, or NF3, H2, and N2. The reaction and removal may be carried out at room temperature in the same chamber.

This invention discloses a SiC with an ultra-high temperature ceramic gradient coating. f / SiC composite materials, their preparation methods, and applications. A double-layer glow discharge plasma surface metallurgical method is used to prepare SiC composite materials. f A (Hf,Si,Ta)C gradient composite coating was prepared on the surface of the SiC composite material. This coating was able to resist SiC in an oxygen atmosphere at 1773 K. f Effective protection of SiC composite materials. The specific advantages of this invention are: (1) Ion bombardment of the substrate significantly improves the point defects and conductivity of the composite substrate; (2) The (Hf,Si,Ta)C coating has a continuous gradient structure, forming a good metallurgical bond between the coating and the substrate, with high bonding strength; (3) The similar thermal expansion coefficients of the (Hf,Si,Ta)C coating and the substrate can improve the thermal mismatch between the coating and the substrate, reducing the tendency for coating peeling and cracking during service; (4) The (Hf,Si,Ta)C coating system has a high service temperature and self-healing ability. The coating prepared by this invention has excellent high-temperature protection performance, improving the protection of SiC. f The high-temperature service life of SiC composite materials has broad application prospects in the aerospace field.

An AlO x A method for preparing an Al2O3 low-reflection, etch-resistant composite coating includes the following steps: In a first chamber, the surface of a substrate is cleaned by ion bombardment; in a second chamber, argon and oxygen are introduced, and at least one layer of Al2O3 is deposited on the surface of the substrate using pulsed DC magnetron sputtering. x Layer; containing AlO x The substrate of the layer is fed into the third chamber, argon and oxygen are introduced, and AlO is sputtered using pulsed DC magnetron sputtering. x An Al2O3 layer is deposited on the surface of the layer and cooled in the furnace to obtain AlO. x - Al2O3 low-reflection, etching-resistant composite coating. This invention constructs a non-stoichiometric Al2O3 composite coating within the composite coating. x A gradient structure of oxygen content gradually transitioning from a layer to a dense Al2O3 layer, with low oxygen content AlO2O3. x The layer has a high oxygen vacancy concentration and low reflectivity, which can effectively reduce the reflection intensity in the ultraviolet-visible band. The dense Al2O3 layer formed on the surface has good structural stability and chemical inertness, thus significantly improving the etching resistance of the coating in the plasma etching environment.

This invention discloses a system and method for achieving atomic layer etching (ALE) and radical-enhanced deposition (REED) in a single chamber. The system features a switchable DC blocking capacitor for grounding an electrostatic chuck (ESC) to eliminate the plasma sheath, and employs high-power short-pulse RF to suppress ion bombardment during ALE surface modification and REED deposition steps, thereby achieving efficient processing and making it suitable for applications such as the fabrication of high aspect ratio structures.

A method for removing carbon contamination from a silicon carbide chip includes: providing a substrate having opposing first and second surfaces; forming a device layer on the first surface of the substrate, the device layer having a source doped region; forming an interlayer dielectric layer on the source doped region; etching the interlayer dielectric layer to expose the surface of the source doped region, forming a contact hole; forming a first metal layer at the bottom of the contact hole; heat-treating the first metal layer and the source doped region to form a first ohmic contact layer and a first carbon contamination layer on the surface of the first ohmic contact layer; and performing a plasma gas cleaning operation to remove the first carbon contamination layer. Since the plasma gas cleaning operation is a dry removal method, specifically involving low-energy ion bombardment to remove the first carbon contamination layer, it can remove the first carbon contamination layer while avoiding damage to the first ohmic contact layer at the bottom of the first carbon contamination layer and the surface of the source doped region, thereby improving the electrical performance and reliability of the silicon carbide chip.

This invention discloses an aluminum nitride precision ceramic for semiconductor devices and its preparation method, relating to the field of ceramic materials technology for semiconductor devices. The invention utilizes a chemical vapor infiltration process to grow a thick hexagonal boron nitride thin film in situ on the geometrical outer surface and subsurface pore inner walls of a polycrystalline aluminum nitride ceramic substrate. This hexagonal boron nitride thin film alternates with aluminum nitride grains in the polycrystalline aluminum nitride ceramic substrate, forming a boron nitride / aluminum nitride superlattice protective layer on the surface. When high-energy arsenic or phosphorus ions bombard the surface, the hexagonal boron nitride thin film effectively absorbs and dissipates the ion bombardment kinetic energy through an interlayer slip mechanism. Furthermore, the low atomic numbers and light atomic weights of boron and nitrogen significantly reduce the physical sputtering yield of aluminum atoms, achieving comprehensive anti-sputtering protection while ensuring a high-strength bond between the protective layer and the substrate. It also maintains the intrinsic thermal conductivity and insulation properties of AlN ceramics, making it suitable for the operating conditions of high-energy ion implanters.

The application belongs to the technical field of space lubricating materials, and particularly relates to a MoS2-WS2-based composite film and a preparation method and application thereof. The preparation method of the MoS2-WS2-based composite film provided by the application comprises the following steps: after a base material is ion-bombarded and cleaned, non-equilibrium magnetron sputtering is performed on the base material by using a MoS2 target and a WS2 target, or a MoS2 target, a WS2 target and a metal Ti target, so as to form a MoS2-WS2-based composite film; and according to an atomic percentage, the MoS2-WS2-based composite film contains 0-13.5% Ti, 13.0-27.3% W, 14.4-38.4% Mo and a balance of S and impurity elements. MoS2 and WS2 with similar crystal structures are combined together by using non-equilibrium magnetron sputtering, and the obtained composite film has excellent tribological properties in a vacuum environment, and still has a relatively low friction coefficient and a relatively long wear life after being irradiated by atomic oxygen.

The application discloses a three-dimensional sputtering deposition collection device under multiple azimuth angles, comprising a vacuum chamber, a supporting bottom plate and a radio frequency ion thruster are arranged in the vacuum chamber, a sputtering deposition three-dimensional collection mechanism is detachably installed on the top of the supporting bottom plate, a target material is arranged at the top end of the supporting bottom plate, the target material is arranged on the inner side of the sputtering deposition three-dimensional collection mechanism, the radio frequency ion thruster is arranged above the sputtering deposition three-dimensional collection mechanism, the radio frequency ion thruster is used for generating an ion beam, and the ion beam is used for bombarding the target material. The application collects the sputtering deposition quality of the target material under multiple azimuth angles through experiments, based on the demand of monitoring the three-dimensional spherical sputtering area generated by the sputtering particles after the target material is bombarded by ions, the three-dimensional sputtering area monitoring of different ion bombardment incident angles is realized by arranging the target material and the three-dimensional sputtering deposition collection device at different angles. The application is composed of a mechanical structure, is easy to assemble, simple to process, convenient to use and stable in data acquisition.

This invention relates to the field of contamination control technology for space optical payloads, specifically providing an in-situ molecular cleaning and particulate dust removal system for space optical payloads. The system includes an electrode array and a multi-mode power controller. The electrode array comprises at least two electrode groups with electrodes in different groups interleaved. The multi-mode power controller is configured to: in a first mode, provide direct current to the electrode array to remove organic molecular contaminants from the surface of the optical payload through high-energy ion bombardment; and in a second mode, provide multiphase alternating current with a phase difference to different electrode groups in the electrode array to push particulate contaminants away from the optical payload surface through a traveling wave electric field. This invention fundamentally solves the problem of combined oil film and particulate contamination that traditional technologies cannot handle.

This invention provides a method and application for strengthening the surface of a stainless steel diaphragm. First, the surface of the stainless steel diaphragm is bombarded with ions generated by an inert gas to remove the oxide film and reduce surface roughness, providing suitable surface conditions for subsequent magnetron sputtering aluminum deposition and vacuum heat treatment processes involving solder coating. Then, an aluminum film is deposited on the surface of the stainless steel diaphragm by magnetron sputtering. Next, a Ni-Cr-Fe based solder is coated onto the aluminum-coated surface of the stainless steel diaphragm. Vacuum heat treatment then forms a strengthening layer on the aluminum-coated surface using the solder. This method achieves a good strengthening effect on the surface of the stainless steel diaphragm, meeting the design pressure of the diaphragm-type high-pressure hydrogen compressor at hydrogen refueling stations, which is increased to 90 MPa to improve hydrogen refueling efficiency.

This invention provides a slit component for an ion implanter. The slit component includes a first component and a second component symmetrically arranged, forming a slit between the first and second components to guide the passage of an ion beam. Both the first and second components include a body and a detachable assembly disposed on the body. The detachable assembly faces the ion beam incident direction and shields the body near the slit, preventing the body from being bombarded by the ion beam. The service life of the slit component can be extended by disassembling and replacing the detachable assembly. When the ion beam passes through the slit, the surface of the detachable assembly will be dented due to ion bombardment. In this case, the operator can remove the damaged detachable assembly, rotate it to the un-bombarded side, and then reinstall it, thereby extending its service life.

This invention relates to an antireflective and high-transmittance thin film and its preparation method, characterized in that: (1) ordinary glass is selected as the substrate, and ultrasonically cleaned sequentially with acetone, alcohol, and deionized water, and then dried; (2) the glass is placed on a sample holder, and the target material is bombarded with Ar ions, with the vacuum degree controlled at 2.0 × 10⁻⁶. ‑1 Pa; (3) Titanium dioxide and silicon dioxide doped layers are deposited on glass by magnetron sputtering. Titanium dioxide is sputtered with a DC power of 215W and silicon dioxide is sputtered with an RF power of 75W-150W. Sputtering is performed simultaneously. When depositing TiO2, metallic Ti is used as the target material. When depositing SiO2, a Si target is used. The DC power Ti target and the RF power Si target are deposited simultaneously. Argon gas is introduced at 30 sccm and oxygen gas at 3 sccm; (4) A silicon dioxide layer is further deposited by magnetron sputtering. A Si target is used. The RF power is 100W. Argon gas is introduced at 30 sccm and oxygen gas at 3 sccm. Advantages of this invention: The high transmittance film prepared has a transmittance of up to 99.5% at 500nm and an average transmittance of over 97.4% at 500nm-600nm.

The application discloses a metal wire solid-state additive manufacturing method based on alternating contact resistance heat in the technical field of additive manufacturing, which is characterized by the following steps: coating a nano-composite modified slurry on the surface of a metal wire, drying to obtain a modified wire; performing ultrasonic cleaning and ion bombardment cleaning on the surface of a base body, and fixing under the protection of inert gas; loading the modified wire into a wire feeding mechanism and adjusting the contact angle and pressure; connecting an alternating power supply to apply alternating current, performing interface heating through staged temperature control, and maintaining the alternating current effect to form a metallurgical bonding layer; after the power supply is cut off, moving to the next deposition position to repeat the heating process, realizing layer-by-layer fusion and superposition, and finally obtaining a formed part. The application realizes the unification of interface selective fusion and solid-state additive manufacturing, and obtains a dense metallurgical bonding interface and a metal additive manufacturing component with low residual stress.

This invention relates to an article comprising a substrate having at least one main surface coated with a layer L of a material M obtained by vacuum deposition of at least one metal compound A selected from alkaline earth metal fluorides and at least one organosilicon compound B via co-evaporation, the material M having a refractive index in the range of 1.38 to 1.47 at a wavelength of 632.8 nm. According to the invention: - the organosilicon compound B comprises an organosilicon compound or a mixture of organosilicon compounds; and - the compound B is deposited in gaseous form in the presence of ion bombardment.

A method for forming a semiconductor device can include providing a substrate having a patterned structure comprising semiconductor materials, where the patterned structure has a side profile including indentations, such as a patterned film stack, and where a spacer layer is conformally deposited over the patterned structure and within the indentations, reacting a surface of the spacer layer with a plasma-excited first etch gas to form a reacted layer on the spacer layer, wherein the plasma-excited first etch gas includes fluorine, hydrogen, and nitrogen, and removing at least part of the reacted layer by ion bombardment from exposure to a plasma-excited second etch gas. The spacer layer can be SiOCN. The reacted layer can be ammonium fluorosilicate. The first etch gas can contain SF6, H2, and N2, or NF3, H2, and N2. The reacting and removing can be done at room temperature in a same chamber.

The application discloses a hollow tube DLC coating method by using a direct current magnetic control strong stretching arc, belongs to the technical field of surface coating, and aims at the problems of poor film uniformity, low adhesion, slow deposition rate and the like in the deposition of a DLC film on the inner wall of a hollow tube in the prior art. A low-pressure environment is established by using a vacuum cavity and a vacuum pump system, and a gas supply system is used to control a deposition atmosphere. A strong stretching arc source with a plurality of magnetic field coils is used to deposit a high-density DLC film on the inner wall of the hollow tube, so that the uniformity and adhesion of the DLC film are improved. Meanwhile, a bias voltage is applied to the hollow tube to enhance the adsorption capacity of carbon plasma on the surface of the substrate, improve the ion bombardment effect, make the DLC structure more dense, and significantly improve the adhesion between the coating and the substrate. The application is especially suitable for the inner wall area which is difficult to be coated. The application can effectively improve the uniformity, adhesion and deposition rate of the DLC coating, and is suitable for surface modification of hollow tube parts with high wear resistance and low friction requirement.

The application discloses a method for gradient step growth of cubic boron nitride film, and aims at the problem that sp2 to sp3 structure efficient and controllable conversion is difficult to realize at present, and proposes a growth strategy of stage gradient energy regulation, which comprises the following steps: depositing a buffer layer mainly in sp2 hybrid structure under zero bias voltage or low bias voltage; inducing the buffer layer to transform into sp3 hybrid structure by gradually increasing the negative bias voltage of the substrate to-80V to-120V, so as to form a high-density cubic boron nitride nucleation layer; and stably setting the negative bias voltage of the substrate to-110V to-130V for epitaxial growth, so as to obtain a high-phase-purity cubic boron nitride film. By adjusting the ion bombardment energy in stages, the application realizes decoupling control of the phase transformation kinetics process and the internal stress evolution process of the film, significantly improves the phase purity, structure uniformity and interface quality of the c-BN film, and reduces the surface roughness and internal residual stress.

This invention belongs to the field of materials preparation technology, specifically relating to the fabrication of micropits for single-molecule detection chip substrates and the single-molecule detection chip itself. The method provided by this invention mainly includes the following steps: first, heavy ions are accelerated using an accelerator; then, the accelerated heavy ions bombard the substrate. After the heavy ions damage the substrate, an etchant with added corrosion inhibitors is used to etch the substrate, obtaining micropits of specific diameter and depth. The etched sample is then cleaned and dried. This method of fabricating micropits by accelerating and bombarding the substrate with heavy ions overcomes the limitations of traditional photolithography. It directly defines the micropit pattern through heavy ion bombardment, eliminating the need for photomasks. This not only reduces material costs but also avoids production interruptions and additional costs caused by photomask damage. Furthermore, the processing is relatively simple, eliminating the need for multiple complex photolithography and etching steps, greatly improving production efficiency, shortening the production cycle, and reducing production costs.

This invention belongs to the field of thermal barrier coating (EB-PVD) technology, and relates to a method for preparing an interlayer gradient transition layer in EB-PVD. The invention first deposits MCrAlY metallic material, followed by the deposition of YSZ, rare earth zirconates, and high-entropy ceramic materials, combining physical vapor deposition (PVD) and ion beam bombardment. Simultaneously, high-energy ion bombardment of the deposition surface further enhances the deposition rate. A YSZ gradient structure transition layer is deposited on the surface of the metal binder layer, and a gradient element transition layer is deposited at the interface between the YSZ layer and the rare earth zirconate or high-entropy ceramic layer. The ion-assisted deposition process can improve the deposition rate of the EB-PVD process, accurately control the coating composition, reduce the preheating temperature, decrease interlayer residual stress during coating preparation and thermal cycling, further improve the bonding strength of the thermal barrier coating, and ultimately extend the service life of the coating.