160 results about "Ion bombardment" patented technology

The invention belongs to the technical field of vacuum coating, and relates to an electron gun and ion source collaborative evaporation coating method, a control method and a control system. The electronic gun and ion source collaborative evaporation coating control method comprises the steps that key parameters in the coating process are continuously collected, and an electronic gun beam initial value and an ion source gas flow initial value are dynamically generated according to state diagnosis results of all the parameters; the beam current value of the electron gun and the gas flow value of the ion source are corrected in real time to inhibit the disturbance of the ion source to the beam current of the electron gun, and the electron gun and the ion source are cooperatively regulated and controlled to ensure the precise control of the coating uniformity; the invention further discloses an electron gun and ion source collaborative evaporation coating method, local hot spot compensation and global uniformity compensation are carried out by adopting a film thickness compensation mechanism so as to accurately control the film thickness. According to the invention, the cooperative control of the electron gun evaporation and ion bombardment process is realized, the film adhesion is enhanced, the evaporation coating rate is improved, and the film thickness uniformity is improved.

The invention discloses a preparation method of a novel mixed metal oxide coating titanium electrode, and relates to the technical field of electrode preparation, the method comprises the following specific steps: titanium substrate pretreatment: a titanium plate is sequentially subjected to gradient polishing with 120-800-mesh abrasive paper, the polished titanium substrate is subjected to hydrochloric acid solution etching, argon plasma surface activation and drying treatment, and a titanium substrate is obtained; obtaining a clean substrate surface with proper roughness; through the low-temperature plasma treatment, pulsed bias magnetron sputtering and laser-induced atomic layer deposition (LA-ALD) combined technology, the binding force of the coating and the titanium substrate is remarkably improved, high-energy particles are used for bombarding the surface of the titanium substrate in the low-temperature plasma treatment, residual impurities are effectively removed, the surface roughness and active sites are increased, and the surface hardness of the titanium substrate is improved. In the pulsed bias magnetron sputtering process, the surface of the substrate is further cleaned through periodic ion bombardment, atomic diffusion and mixing between the coating and the substrate are promoted, a transition layer structure is formed, and therefore the binding force is greatly enhanced.

A method for installing an optical element (102) for use with radiation (8) having a wavelength of 365 nm in a projection optics (4), comprising the following steps: a) installing (S100) the optical element (102), which is accommodated in an auxiliary mount (118), in the projection optics (4), b) adjusting (S200) the projection optics (4) together with the optical element (102), c) removing (S300) the optical element (102) together with the auxiliary mount (118) from the projection optics (4), d) correcting (S400) optical properties of the optical element (102) by machining a front side (104) of the optical element (102) using an ion bombardment method, e) removing (S500) the optical element (102) from the auxiliary mount (118), f) coating (S600) the front side (104) with a hot coating, and g) installation (S700) of the optical element (102) into the projection optics (4).

The invention discloses simulated lunar soil for engineering and a preparation process thereof, the simulated lunar soil has a multilayer structure design, and comprises a basic mineral structure layer, a surface activity control layer and a simulated space environment effect layer. The basic mineral structure layer is prepared from modified olivine, titanium-rich basalt, rare earth doped plagioclase, calcium phosphate minerals, nano iron particles and vitreous minerals according to a specific proportion; the surface activity control layer adopts an atomic layer deposition technology to form a nano oxide layer on the surface of the mineral particles; the simulated space environment effect layer is formed through low-pressure helium ion bombardment and ultraviolet irradiation. The preparation process comprises the steps of intelligent graded crushing, mineral phase change control, surface modification and activation treatment, multi-parameter synchronous regulation and control and the like. The simulated lunar soil can be produced in a customized mode according to different lunar area characteristics, the matching degree with real lunar soil physical characteristics exceeds 90%, the ground testing precision of lunar exploration equipment is remarkably improved, and technical support is provided for lunar on-site resource utilization and lunar base construction.

The frequency crack trimming device comprises a quartz cone cylinder, a clamping mechanism, a grating net and a diaphragm sheet, the clamping mechanism is arranged on one side of the small-diameter end of the quartz cone cylinder and used for installing the hemispherical harmonic oscillator to be trimmed, the two ends of the quartz cone cylinder are open, the grating net is fixed to the large-diameter end of the quartz cone cylinder, and the diaphragm sheet is arranged on the grating net. The quartz cone cylinder is used for dispersing ion beams entering the quartz cone cylinder, so that ions bombard the inner wall of the quartz cone cylinder until quartz particles are stripped, the diaphragm sheet is detachably installed at the small-diameter end of the quartz cone cylinder, a diaphragm hole is formed in the diaphragm sheet, and the stripped quartz particles can pass through the diaphragm sheet to be deposited at the position, right opposite to the diaphragm hole, of the hemispherical harmonic oscillator. According to the utility model, the frequency crack trimming of the hemispherical harmonic oscillator is realized in a mass adding manner, and the device has the advantages of simple and convenient operation and capability of rapidly realizing the quality trimming of the hemispherical harmonic oscillator.

The invention provides a preparation method of a hard nitride ceramic coating on the surface of a magnesium alloy, and belongs to the technical field of magnesium alloy coatings. According to the method, intermittent plasma flow is formed by controlling intermittent discharge of a cathode target in the PVD process, heat accumulation generated by continuous bombardment of matrix-coating interface ions is reduced by regulating and controlling the discharge / arc extinguishing period of the target, so that thermal expansion of the matrix-coating interface is reduced, and the thermal conductivity of the matrix-coating interface is improved. And growth defects (pores and cracks) caused by thermal expansion difference between the nitride ceramic coating and the substrate are reduced, and the method has a good industrial application prospect.

The invention provides a red copper connector and a diffusion welding method thereof, and relates to the technical field of metal welding, the diffusion welding method of the red copper connector comprises the following steps: taking a red copper base material, and performing nanocrystallization treatment on one side surface of the red copper base material through an ion impact method to form a welding surface; the annealed copper middle layer is placed between the two pieces of red copper base metal, the annealed copper middle layer makes contact with the welding face, and a connector to be welded is formed; and the connector to be welded is welded through a pulse current auxiliary diffusion welding method, the red copper connector is obtained, the welding temperature of the pulse current auxiliary diffusion welding method is 300 + / -5 DEG C, the pressure is 18-22 MPa, and the heat preservation time is 25-35 min. And low-temperature, rapid and small-deformation reliable connection of the red copper base metal is achieved.

The invention relates to the technical field of cutter coatings and surface coatings, in particular to a high-temperature self-lubricating wear-resistant nano-composite oxynitride coating and a preparation method and application thereof.The coating is prepared through the multi-arc ion plating technology, and the preparation method comprises the steps that Ar < + > ion bombardment, Cr < + > ion implantation and CrN transition layer deposition are sequentially conducted on a base body; and finally, by changing the partial pressure of oxygen in the mixed gas in the chamber, the AlCrVSiON functional coatings with different oxygen contents are deposited. According to the invention, V is added into the AlCrSiN coating, so that the coating generates a Magneli phase under high temperature or friction to form a self-lubricating layer, the friction coefficient is effectively reduced, and the friction performance is improved. Meanwhile, due to the addition of the element O, the coating has good high-temperature oxidation resistance and stable high-temperature mechanical property, and the defects that the mechanical property is reduced and the wear rate is increased due to coating oxidation at high temperature are overcome, so that the coating can be applied to the field of high-temperature cutting.

The invention relates to the technical field of coating preparation, and particularly discloses a high-performance multi-layer coating based on a magnetron sputtering technology and a preparation method thereof.The preparation method comprises the steps that pretreatment is conducted on a base material, specifically, cleaning, polishing and ion cleaning are conducted on the base material; a transition layer, a functional layer and a protective layer are sequentially deposited on the surface of a base material through the magnetron sputtering technology, a multi-layer alternating structure is formed, after each coating is deposited, the surface of the coating is cleaned and activated through the ion bombardment technology, the transition layer adopts a Ti target material, the functional layer adopts a CrAlN target material, and the protective layer adopts an Al2O3 target material; and low-temperature annealing treatment is conducted on the multi-layer alternating structure to eliminate internal stress and improve the compactness of the coating, and the high-performance multi-layer coating is prepared. Through multi-layer coating structure design and ion bombardment treatment, the interlayer binding force is remarkably improved, and the problems of coating stripping and cracking are solved.

The invention discloses an anti-radiation SPH-14T SRAM (Static Random Access Memory) circuit and an anti-radiation SPH-14T SRAM chip combining polarity reinforcement and source isolation technologies, which are designed by adopting a polarity reinforcement principle that transistors of the same type have a single flip characteristic under spatial heavy ion bombardment, and the stability of redundant nodes S0 and S1 is ensured by utilizing the design method. And therefore, the anti-overturning capability of nodes in the circuit is enhanced. Secondly, the stability of a node Q and a node QB is improved through multiplexing of a pull-up PMOS tube and the source isolation technology, meanwhile, the circuit uses four transmission transistors for reading and writing, in the data writing process, a bit line writes data into an internal node QQB and an internal node S0S1 at the same time through transmission transistors N7, N8, N9 and N10, so that the data is more easily written into a storage node, and the stability of the storage node is improved. Therefore, the design greatly improves the data writing speed and noise margin (SNM) of the unit, and a simulation result shows that compared with the existing five SRAM units, the SPH-14T unit disclosed by the invention has more prominent advantages in the writing speed aspect and the noise margin aspect compared with other five SRAMs.

The invention provides a wafer processing optimization method, a wafer processing optimization device and a semiconductor device, and belongs to the technical field of semiconductor device manufacturing. According to the wafer processing optimization method, the energy and the rotating speed of target ions are reasonably adjusted, matching is performed according to the type and the thickness of photoresist, the phenomenon that the photoresist is broken or falls off due to excessive bombardment of the ions is avoided, and the quality of the photoresist is improved. Therefore, the photoresist is kept stable in the ion implantation process, the surface of a wafer below is effectively protected, and a mask pattern in the photoetching process is prevented from being damaged, so that the subsequent photoetching process can be smoothly carried out, and the stability of the manufacturing process and the product quality are ensured.

The invention relates to the technical field of metal pipeline surface treatment, and discloses a metal pipeline sputtering coating method based on a corrosion-resistant alloy target material, which comprises the following steps: applying a first pulse sequence to the alloy target material to sputter metal atoms, and applying a second pulse sequence to a metal pipeline, and the two sequences are strictly synchronized, so that the negative voltage pulse is only applied in a target material power valley period, and metal ions generated by sputtering are utilized to bombard a densified deposition layer. According to the method, through the sequential decoupling metal atom deposition and ion bombardment steps, the re-sputtering contradiction caused by traditional continuous bias voltage is fundamentally solved, the coating rate and the film layer quality are independently regulated and controlled, meanwhile, the process stability is ensured through a closed-loop feedback mechanism, and the consistency and reliability of the coating performance are remarkably improved.

The invention relates to the technical field of organic solar cells, and discloses a sputtering electrode-based all-wet inversion organic solar cell and a preparation method thereof, and the preparation method comprises the steps: carrying out the pretreatment of a substrate and a transparent conductive electrode composite layer; preparing an electron transport layer dispersion liquid, coating the transparent conductive electrode layer with the electron transport layer dispersion liquid by a wet method, and annealing to obtain a wet electron transport layer; preparing an active layer solution, coating the wet electron transport layer with the active layer solution, and annealing to obtain a wet active layer; preparing a hole transport layer solution which comprises a metal oxygen cluster and a silane coupling agent, coating the hole transport layer solution on the wet active layer through a wet coating method, and annealing to obtain a wet hole transport layer; and preparing a conductive electrode layer on the wet hole transport layer through magnetron sputtering. According to the wet hole transport layer in the scheme, through interaction of the metal oxygen cluster and the silane coupling agent, the formed interface layer can effectively resist high-energy ion bombardment in the electrode sputtering process, the functional layer below is protected from being damaged, and the efficiency and stability of the battery are remarkably improved.

A method for forming a semiconductor device provides a substrate having a patterned structure containing a semiconductor material, wherein the patterned structure has a side profile including depressions, such as a patterned film stack, and a spacer layer conformally deposited on and within the depressions of the patterned structure; and a reaction layer formed on the spacer layer by reacting the surface of the spacer layer with a plasma-excited first etching gas, wherein the plasma-excited first etching gas contains fluorine, hydrogen, and nitrogen to form the reaction layer, and at least a portion of the reaction layer is removed by ion bombardment caused by exposure to a plasma-excited second etching gas. The spacer layer may be SiOCN. The reaction layer may be ammonium silicofluoride. The first etching gas may contain SF6, H2, and N2, or NF3, H2, and N2. The reaction and removal may be carried out at room temperature in the same chamber.

The invention belongs to the technical field of thin film material preparation, and relates to a high-density crack-defect-free thin film and a preparation method thereof.The preparation method comprises the steps that firstly, surface cleaning and modification are conducted on a wafer, specifically, under the air pressure of 50-100 Pa, the power of 250-350 W, the temperature of 280-350 DEG C and the inert gas flow of 2000-2500 sccm, plasma bombardment is conducted on the wafer for 10-20 seconds; 2) performing enhanced ion bombardment on the wafer for 50-100 seconds under the conditions that the air pressure is 30-50 Pa, the power is 500-600 W, the temperature is 280-350 DEG C and the inert gas flow is 2500-3000 sccm; 3) bombarding the wafer for 30-100 seconds by using the plasma under the conditions that the air pressure is 100-150Pa, the power is 150-350W, the temperature is 280-350 DEG C, the flow of the inert gas is 2000-2500sccm, and the flow of the active gas is 100-300sccm; 2) thin film deposition: depositing a stable layer: forming the stable layer on the wafer; depositing a growth layer: forming the growth layer on the stable layer; and depositing a compact layer: forming the compact layer on the growth layer. The defect of film formation cracks caused by unbalanced release of local stress of a film layer can be reduced.

The invention relates to the technical field of analysis instrument ionization sources, in particular to a VUV lamp ionization source device with efficient heat dissipation capacity. The device comprises a VUV lamp, a heat dissipation unit, a VUV lamp driving electrode, a driving circuit and an ion guide focusing unit. The heat dissipation unit carries out cooperative heat dissipation on the VUV lamp and the pulse transformer through a fan, and the problems of signal attenuation and device aging caused by temperature rise are solved. The driving electrode adopts a pairwise pairing structure of upper and lower and left and right electrode pairs to form an inclined electric field to prevent ions from bombarding the lamp wall and the light window; the drive circuit is a half-bridge or full-bridge topology, can adjust the pulse frequency and the power supply voltage, and achieves the switching between a high-voltage low-frequency mode and a low-voltage high-frequency mode. The ion guide focusing unit efficiently leads out and separates ions through cooperation of a conical focusing electric field and a conductive film forward electric field. Through four-dimensional innovation of heat dissipation, electrodes, driving and transmission, the stability, the service life and the detection sensitivity of the device are improved, and the device is suitable for analytical instruments such as ion mobility spectrometry and mass spectrometry.

The invention relates to the technical field of engineering logging, and discloses a low-power-consumption radio frequency ion source logging neutron tube and a working method, deuterium gas is ionized into deuterium ions through an ion source, the deuterium ions are accelerated under the action of a strong electric field to obtain energy, and the high-energy deuterium ions bombard a deuterium / tritium target to generate nuclear reaction to generate neutrons. The power requirement of the radio frequency source can be greatly reduced. Compared with an inductive coupling type radio frequency ion source neutron tube, the capacitive coupling type neutron tube has the advantages that D1 + 1 in plasma is increased to 50%, the required power is 25%-30% of that of the inductive coupling type neutron tube, the load of a neutron generator is greatly reduced, the D-D deuterium neutron tube is further applied to engineering practice, and powerful technical support is provided for green and environment-friendly well logging.

The invention provides a preparation method of a high-entropy nitride anti-erosion coating, which comprises the following steps: (1) polishing, cleaning and drying a sample in sequence, placing the sample in a vacuum coating chamber, introducing argon Ar, adjusting the flow of the argon Ar, and carrying out ion bombardment cleaning on the surface of the sample; (2) acquiring the optical emission intensity of the plasma after argon Ar is introduced and the optical emission intensity of the plasma after nitrogen N2 is introduced; (3) depositing a high-entropy alloy transition layer on the surface of the sample; (4) depositing a high-entropy nitride anti-erosion coating on the surface of the sample; and (5) taking out the sample to complete preparation of the coating on the surface of the sample. The preparation of the high-entropy nitride anti-erosion coating is completed by adopting a bipolar high-power pulse magnetron sputtering technology and an ion source to jointly construct a high-density plasma film forming environment, so that the nitridation reaction on the surface of the target material can be effectively inhibited, and the characteristic peak intensity of the plasma is kept unchanged; and the stability of plasma components in the film forming process is ensured.

Method for manufacturing an integrated chip structure comprising the following steps: Production (1902) of a first-material intermediate layer (1304) over a substrate; Production (1904) of a second-material interlayer (1306) on the first-material interlayer (1304); Structuring (1906) the second-material interlayer (1306) to produce an insulating layer (106); Structuring (1908) the first-material intermediate layer (1304) to produce a first-material layer (104) with an outermost side wall (104s) inset inwards from an outermost side wall (106s) of the insulating layer (106); Performing (1912) an ion bombardment process on the insulating layer (106) to remove one or more atoms from the insulating layer (106); and Performing (1914) a redeposition process to redeposit the one or more atoms on the outermost side wall (104s) of the first material layer (104) and to produce a self-filling spacer (112) under the insulating layer (106), wherein the self-filling spacer (112) is produced by a plurality of cycles, each comprising the ion bombardment process (1912) followed by the re-deposition process (1914).

The invention specifically discloses an ion thruster acceleration grid probability life evaluation method based on coupling competitive failure, and relates to the technical field of aerospace propulsion system life evaluation. The method comprises the following steps: firstly, obtaining deterministic parameters and random parameters of a thruster acceleration grid assembly; then based on an ion sputtering corrosion theory, considering material loss caused by charge exchange ion bombardment of the acceleration gate, and establishing a coupling corrosion model of the thickness and aperture of the acceleration gate; thirdly, constructing a competitive failure model, and realizing numerical solution of competitive failure life by dynamically iterating a corrosion state and a failure criterion; and finally, independently repeated random sampling is carried out based on probability distribution of random parameters, the random sampling is substituted into the competitive failure model to obtain an acceleration grid simulation life sample set, and statistical analysis is carried out on the life sample set to obtain a probability life evaluation result. The method solves the problem of errors caused by independent modeling of structural failure and electronic reflux failure in the prior art, and is helpful for reducing the system operation risk and improving the reliability of a spacecraft.

The invention discloses a contact pole gap additional ventilation type hollow cathode, which belongs to the technical field of spaceflight propulsion, and comprises a cathode assembly and a contact pole assembly, and the core is improved as follows: the contact pole assembly consists of a porous contact pole tube, a gas distributor and a contact pole ventilation ring which are mutually nested to form an independent gas supply system; after being subjected to pressure equalizing by the gas distributor and rectification by the contact pole ventilation ring, a working medium is uniformly injected into an annular gap between the contact pole and the cathode tube through circumferential ventilation holes of the contact pole tube with holes. The downstream gas density of the throttling hole is remarkably improved, discharge oscillation and ion bombardment corrosion are restrained, the gas supplementing amount can be dynamically adjusted and controlled, and the device is suitable for different working conditions. The cathode is simple and reliable in structure, highly compatible with an existing cathode, capable of prolonging the service life of the cathode and widening the stable operation interval, and suitable for long-service-life aerospace tasks of various electric propulsion systems.

The present invention provides a heterogeneous micro-rib membrane and a preparation method thereof, comprising a front and a back surface, wherein the front surface is provided with a vortex generator array and a rib array, wherein the vortex generator array is arranged in series with the rib array, wherein the vortex generator array includes a plurality of flatly arranged vortex generators, and the rib array includes a plurality of flatly arranged ribs. From the front surface to the back surface, the membrane comprises a first protective layer, a second protective layer, a support layer, a backing layer, and a bottom film layer, wherein the first protective layer is made of a super-hydrophobic modified material, the second protective layer is formed by argon ion bombardment of a chromium target and deposition of chromium atoms, the support layer is made of an epoxy resin material, and the backing layer is prepared by corona treating the surface of the support layer and applying glue; the bottom film layer is removable. The heterogeneous micro-rib membrane provided by the present invention has high overall strength, wear resistance, corrosion resistance, and significant drag reduction effect.

This invention discloses a SiC with an ultra-high temperature ceramic gradient coating. f / SiC composite materials, their preparation methods, and applications. A double-layer glow discharge plasma surface metallurgical method is used to prepare SiC composite materials. f A (Hf,Si,Ta)C gradient composite coating was prepared on the surface of the SiC composite material. This coating was able to resist SiC in an oxygen atmosphere at 1773 K. f Effective protection of SiC composite materials. The specific advantages of this invention are: (1) Ion bombardment of the substrate significantly improves the point defects and conductivity of the composite substrate; (2) The (Hf,Si,Ta)C coating has a continuous gradient structure, forming a good metallurgical bond between the coating and the substrate, with high bonding strength; (3) The similar thermal expansion coefficients of the (Hf,Si,Ta)C coating and the substrate can improve the thermal mismatch between the coating and the substrate, reducing the tendency for coating peeling and cracking during service; (4) The (Hf,Si,Ta)C coating system has a high service temperature and self-healing ability. The coating prepared by this invention has excellent high-temperature protection performance, improving the protection of SiC. f The high-temperature service life of SiC composite materials has broad application prospects in the aerospace field.

The invention relates to the technical field of semiconductors, and provides a semiconductor device preparation method which is used for forming a through hole in a glass substrate. The hard mask layer is stacked on one side of the glass substrate, and the hard mask is made of a high-stability material, so that the structure of the hard mask layer is stable, the etching rate of the hard mask layer in the dry etching process is low, and the selection ratio of the hard mask layer relative to the glass substrate is higher. Therefore, the depth of the through hole processed on the glass substrate can be relatively deeper. In the through hole forming process, the flow of physical etching gas in the dry etching process is gradually reduced. By reducing the flow of the physical etching gas, the ion bombardment energy of the physical etching gas can be reduced, so that the generation of micro-grooves in the side wall and the bottom of the through hole by the physical etching gas can be relieved to a certain extent, and the flatness of the side wall and the bottom of the through hole of the glass substrate is better.

The invention discloses a match-grinding-free quick forming process for a valve element and a valve sleeve of a servo valve, and relates to the technical field of servo valve machining and forming. Step 2, material inspection; step 3, surface treatment; step 4, ultrasonic cleaning; step 5, clamping the part; step 6, vacuumizing; seventhly, argon ion bombardment cleaning is conducted; 8, depositing a chromium base layer; 9, depositing a gradient chromium carbide transition layer; 10, depositing a hydrogenated diamond-like carbon top layer; and eleventhly, cooling and discharging are conducted. According to the match-grinding-free quick forming process for the valve element and the valve sleeve of the servo valve, the machining period of a sliding valve assembly can be shortened by 30%, the material cost is reduced by 80%, and the interchangeability of the valve sleeve and the valve element in the sliding valve assembly is achieved.

The present invention discloses a novel anode layer ion source. The anode layer ion source prevents positive ions in the ion channel from bombarding the cathode surface by arranging outer shielding covers on the surfaces of the inner cathode and the outer cathode, thereby reducing metal atoms generated by sputtering, effectively suppressing cathode etching, and preventing sample contamination. At the same time, a magnetic shielding cover is arranged around the inner contours of the inner cathode and the outer cathode inside the ion source to shield the magnetic field near the anode, optimize the electromagnetic field distribution, reduce internal discharge, improve the stability of the process, and thus increase the working life of the anode layer ion source.

The present application relates to high temperature protective coating technical field, specifically to a coating which does not form needle-shaped phase with nickel-based alloy interface and a preparation method. The coating is composed of carbon interstitial nickel-based, cobalt-based or nickel-cobalt-based alloy and dispersed nano-carbide particles; the preparation method is prepared by regulating vacuum cathode arc plasma in-situ reaction, and the preparation steps include: ① the substrate is subjected to conventional grinding, polishing and oil removal pretreatment, ② the alloy target material is installed, vacuum is drawn and the substrate is subjected to ion sputtering cleaning, ③ the vacuum arc plasma with the coating target material as the cathode is ignited, ④ the workpiece surface is bombarded and activated by cation with energy of 300eV-1000eV, ⑤ the coating is formed on the workpiece surface by depositing the gas containing carbon elements through plasma activation reaction by regulating the partial pressure. The coating can avoid the precipitation of needle-shaped harmful phase at the interface with nickel-based high-temperature alloy, and the method has the advantages of simple and controllable process, suitable for batch preparation and the like.

The invention relates to a method for coating a film in a hole of a ceramic substrate, which is characterized by comprising the following steps of: assembling the ceramic substrate on a conductive clamp, assembling the conductive clamp on a rotating stand in a film coating chamber, connecting the rotating stand with a high-frequency power supply, exhausting air in the film coating chamber, and starting a heating system to bake the film coating chamber. Starting an ion beam cleaning power supply and a bias power supply, and carrying out ion beam cleaning treatment on the surface of the substrate; cleaning the surfaces of the titanium target material and the copper target material; preparing a bottom layer on the surface of the substrate by using a titanium target; preparing a transition layer on the base layer by using a titanium target material and a copper target material; and preparing a copper sputtering layer on the transition layer by using a copper target material. According to the technical scheme provided by the invention, argon ion bombardment cleaning and titanium layer bottoming, transition layer and copper sputtering layer preparation are sequentially carried out on the ceramic substrate. Copper plating is carried out in a high-vacuum high-temperature environment, titanium is adopted for bottoming to improve the binding force, and a high-frequency power supply is adopted for applying bias voltage to the surface of a workpiece, so that a film layer in a hole is uniform.

The invention belongs to the technical field of material preparation, and particularly relates to a preparation method and application of a micro-pit with polycarbonate as a base material. The method provided by the invention mainly comprises the following steps: accelerating heavy ions by using an accelerator, bombarding a base material by using the accelerated heavy ions, and after the heavy ions damage polycarbonate, etching the polycarbonate by using an etching agent added with a corrosion inhibitor to obtain micro-pits with specific diameters and depths, and cleaning and drying the etched sample. The preparation of the micro-pit is realized by accelerating impact of the polycarbonate with heavy ions, the method breaks through the limitation of the traditional photoetching technology, the pattern of the micro-pit is directly defined through heavy ion bombardment, a mask is not needed, the material cost is reduced, production interruption and extra cost caused by damage of the mask are also avoided, and the production efficiency is improved. And the processing process is relatively simple, multiple complex photoetching and etching steps are not needed, the production efficiency is greatly improved, the production period is shortened, and the production cost is reduced.

Aspects of the present disclosure provide a method for filling a horizontal gap of a semiconductor structure. For example, the method can include providing a workpiece that includes a stack of alternating first layers and second layers that are parallel with each other. At least one of the second layers can be recessed with respect to vertical sidewalls of two neighboring first layers that sandwich the second layer. A horizontal gap can be formed between the recessed second layer and the two neighboring first layers. The method can further include depositing a gap-filling material to cover the sidewalls of the first layers and fill the horizontal gap, etching back a portion of the gap-filling material that is deposited on the sidewalls of the first layers in an ion bombardment process, and forming a gap filler that includes a remaining portion of the gap-filling material that fills the horizontal gap.