74 results about "Ion bombardment" patented technology

The invention belongs to the technical field of vacuum coating, and relates to an electron gun and ion source collaborative evaporation coating method, a control method and a control system. The electronic gun and ion source collaborative evaporation coating control method comprises the steps that key parameters in the coating process are continuously collected, and an electronic gun beam initial value and an ion source gas flow initial value are dynamically generated according to state diagnosis results of all the parameters; the beam current value of the electron gun and the gas flow value of the ion source are corrected in real time to inhibit the disturbance of the ion source to the beam current of the electron gun, and the electron gun and the ion source are cooperatively regulated and controlled to ensure the precise control of the coating uniformity; the invention further discloses an electron gun and ion source collaborative evaporation coating method, local hot spot compensation and global uniformity compensation are carried out by adopting a film thickness compensation mechanism so as to accurately control the film thickness. According to the invention, the cooperative control of the electron gun evaporation and ion bombardment process is realized, the film adhesion is enhanced, the evaporation coating rate is improved, and the film thickness uniformity is improved.

A method for forming a semiconductor device provides a substrate having a patterned structure containing a semiconductor material, wherein the patterned structure has a side profile including depressions, such as a patterned film stack, and a spacer layer conformally deposited on and within the depressions of the patterned structure; and a reaction layer formed on the spacer layer by reacting the surface of the spacer layer with a plasma-excited first etching gas, wherein the plasma-excited first etching gas contains fluorine, hydrogen, and nitrogen to form the reaction layer, and at least a portion of the reaction layer is removed by ion bombardment caused by exposure to a plasma-excited second etching gas. The spacer layer may be SiOCN. The reaction layer may be ammonium silicofluoride. The first etching gas may contain SF6, H2, and N2, or NF3, H2, and N2. The reaction and removal may be carried out at room temperature in the same chamber.

The invention relates to the technical field of analysis instrument ionization sources, in particular to a VUV lamp ionization source device with efficient heat dissipation capacity. The device comprises a VUV lamp, a heat dissipation unit, a VUV lamp driving electrode, a driving circuit and an ion guide focusing unit. The heat dissipation unit carries out cooperative heat dissipation on the VUV lamp and the pulse transformer through a fan, and the problems of signal attenuation and device aging caused by temperature rise are solved. The driving electrode adopts a pairwise pairing structure of upper and lower and left and right electrode pairs to form an inclined electric field to prevent ions from bombarding the lamp wall and the light window; the drive circuit is a half-bridge or full-bridge topology, can adjust the pulse frequency and the power supply voltage, and achieves the switching between a high-voltage low-frequency mode and a low-voltage high-frequency mode. The ion guide focusing unit efficiently leads out and separates ions through cooperation of a conical focusing electric field and a conductive film forward electric field. Through four-dimensional innovation of heat dissipation, electrodes, driving and transmission, the stability, the service life and the detection sensitivity of the device are improved, and the device is suitable for analytical instruments such as ion mobility spectrometry and mass spectrometry.

The invention provides a preparation method of a high-entropy nitride anti-erosion coating, which comprises the following steps: (1) polishing, cleaning and drying a sample in sequence, placing the sample in a vacuum coating chamber, introducing argon Ar, adjusting the flow of the argon Ar, and carrying out ion bombardment cleaning on the surface of the sample; (2) acquiring the optical emission intensity of the plasma after argon Ar is introduced and the optical emission intensity of the plasma after nitrogen N2 is introduced; (3) depositing a high-entropy alloy transition layer on the surface of the sample; (4) depositing a high-entropy nitride anti-erosion coating on the surface of the sample; and (5) taking out the sample to complete preparation of the coating on the surface of the sample. The preparation of the high-entropy nitride anti-erosion coating is completed by adopting a bipolar high-power pulse magnetron sputtering technology and an ion source to jointly construct a high-density plasma film forming environment, so that the nitridation reaction on the surface of the target material can be effectively inhibited, and the characteristic peak intensity of the plasma is kept unchanged; and the stability of plasma components in the film forming process is ensured.

The invention discloses a contact pole gap additional ventilation type hollow cathode, which belongs to the technical field of spaceflight propulsion, and comprises a cathode assembly and a contact pole assembly, and the core is improved as follows: the contact pole assembly consists of a porous contact pole tube, a gas distributor and a contact pole ventilation ring which are mutually nested to form an independent gas supply system; after being subjected to pressure equalizing by the gas distributor and rectification by the contact pole ventilation ring, a working medium is uniformly injected into an annular gap between the contact pole and the cathode tube through circumferential ventilation holes of the contact pole tube with holes. The downstream gas density of the throttling hole is remarkably improved, discharge oscillation and ion bombardment corrosion are restrained, the gas supplementing amount can be dynamically adjusted and controlled, and the device is suitable for different working conditions. The cathode is simple and reliable in structure, highly compatible with an existing cathode, capable of prolonging the service life of the cathode and widening the stable operation interval, and suitable for long-service-life aerospace tasks of various electric propulsion systems.

This invention discloses a SiC with an ultra-high temperature ceramic gradient coating. f / SiC composite materials, their preparation methods, and applications. A double-layer glow discharge plasma surface metallurgical method is used to prepare SiC composite materials. f A (Hf,Si,Ta)C gradient composite coating was prepared on the surface of the SiC composite material. This coating was able to resist SiC in an oxygen atmosphere at 1773 K. f Effective protection of SiC composite materials. The specific advantages of this invention are: (1) Ion bombardment of the substrate significantly improves the point defects and conductivity of the composite substrate; (2) The (Hf,Si,Ta)C coating has a continuous gradient structure, forming a good metallurgical bond between the coating and the substrate, with high bonding strength; (3) The similar thermal expansion coefficients of the (Hf,Si,Ta)C coating and the substrate can improve the thermal mismatch between the coating and the substrate, reducing the tendency for coating peeling and cracking during service; (4) The (Hf,Si,Ta)C coating system has a high service temperature and self-healing ability. The coating prepared by this invention has excellent high-temperature protection performance, improving the protection of SiC. f The high-temperature service life of SiC composite materials has broad application prospects in the aerospace field.

The present application relates to high temperature protective coating technical field, specifically to a coating which does not form needle-shaped phase with nickel-based alloy interface and a preparation method. The coating is composed of carbon interstitial nickel-based, cobalt-based or nickel-cobalt-based alloy and dispersed nano-carbide particles; the preparation method is prepared by regulating vacuum cathode arc plasma in-situ reaction, and the preparation steps include: ① the substrate is subjected to conventional grinding, polishing and oil removal pretreatment, ② the alloy target material is installed, vacuum is drawn and the substrate is subjected to ion sputtering cleaning, ③ the vacuum arc plasma with the coating target material as the cathode is ignited, ④ the workpiece surface is bombarded and activated by cation with energy of 300eV-1000eV, ⑤ the coating is formed on the workpiece surface by depositing the gas containing carbon elements through plasma activation reaction by regulating the partial pressure. The coating can avoid the precipitation of needle-shaped harmful phase at the interface with nickel-based high-temperature alloy, and the method has the advantages of simple and controllable process, suitable for batch preparation and the like.

The invention belongs to the technical field of material preparation, and particularly relates to a preparation method and application of a micro-pit with polycarbonate as a base material. The method provided by the invention mainly comprises the following steps: accelerating heavy ions by using an accelerator, bombarding a base material by using the accelerated heavy ions, and after the heavy ions damage polycarbonate, etching the polycarbonate by using an etching agent added with a corrosion inhibitor to obtain micro-pits with specific diameters and depths, and cleaning and drying the etched sample. The preparation of the micro-pit is realized by accelerating impact of the polycarbonate with heavy ions, the method breaks through the limitation of the traditional photoetching technology, the pattern of the micro-pit is directly defined through heavy ion bombardment, a mask is not needed, the material cost is reduced, production interruption and extra cost caused by damage of the mask are also avoided, and the production efficiency is improved. And the processing process is relatively simple, multiple complex photoetching and etching steps are not needed, the production efficiency is greatly improved, the production period is shortened, and the production cost is reduced.

Aspects of the present disclosure provide a method for filling a horizontal gap of a semiconductor structure. For example, the method can include providing a workpiece that includes a stack of alternating first layers and second layers that are parallel with each other. At least one of the second layers can be recessed with respect to vertical sidewalls of two neighboring first layers that sandwich the second layer. A horizontal gap can be formed between the recessed second layer and the two neighboring first layers. The method can further include depositing a gap-filling material to cover the sidewalls of the first layers and fill the horizontal gap, etching back a portion of the gap-filling material that is deposited on the sidewalls of the first layers in an ion bombardment process, and forming a gap filler that includes a remaining portion of the gap-filling material that fills the horizontal gap.

The invention provides a surface treatment method for a valve plate base body and a valve plate. The method comprises the steps that a valve plate base body is subjected to polishing, ultrasonic cleaning and drying treatment; the cleaned valve plate is placed in a vacuum ion nitriding furnace to be subjected to nitriding treatment under the treatment conditions that a vacuum pump is started for air exhaust, after the pressure value in the furnace reaches a first specified value, high pressure is started, argon is introduced, the vacuum degree of a furnace cavity is kept at a second specified value, the surface layer starts to be heated through high-energy ion bombardment, and the surface layer is heated; after the temperature of the workpiece reaches 480-510 DEG C, nitrogen is introduced, the volume ratio of nitrogen to argon is set to be 1: 6, the air pressure is adjusted to 300-500 Pa, and heat preservation is conducted for 6-8 h; and the valve plate subjected to nitriding treatment is transferred to multi-arc ion plating equipment for coating deposition, and the treatment conditions of coating deposition are as follows: nitride is selected as a deposition material, the substrate temperature is kept at 450 DEG C in the deposition process, the target current is controlled to be 120-150 A, the vacuum degree is 2-3 Pa, and the deposition time is 60-90 min.

The invention discloses a surface ion nitriding nickel-based superalloy and a preparation method thereof, and belongs to the field of metal material surface hardening treatment.The preparation method comprises the steps that the nickel-based superalloy is polished and cleaned; carrying out ion bombardment on the cleaned nickel-based high-temperature alloy in a hydrogen atmosphere; carrying out ion nitriding on the nickel-based high-temperature alloy subjected to ion bombardment in the atmosphere of nitrogen and hydrogen; and cooling the nickel-based high-temperature alloy after ion nitriding to below 100 DEG C along with the furnace, and discharging the nickel-based high-temperature alloy after surface ion nitriding to obtain the nickel-based high-temperature alloy after surface ion nitriding. According to the method, the surface of the nickel-based high-temperature alloy is bombarded by adopting high-energy ions before nitriding, so that a passivation layer, oil stains and other impurities on the surface of a workpiece can be removed at the same time, the problem that a passivation film hinders nitrogen permeation in the nitriding process is avoided, additional pretreatment is not needed, and the overall period is shortened; by optimizing the process parameters of ion nitriding, the time-consuming steps of slowly decomposing nitrogen atoms by depending on gases such as ammonia gas in atmosphere nitriding and then passively diffusing the nitrogen atoms are omitted, and the nitriding efficiency is greatly improved.

The invention discloses a surface ion nitriding TiAl alloy and a preparation method thereof, and belongs to the field of metal material surface hardening treatment.The preparation method comprises the steps that the TiAl alloy is polished and cleaned; the cleaned TiAl alloy is subjected to ion bombardment in the hydrogen atmosphere; the TiAl alloy subjected to ion bombardment is subjected to ion nitriding in the nitrogen atmosphere; and the TiAl alloy subjected to ion nitriding is cooled to 100 DEG C or below along with the furnace and discharged out of the furnace, and the TiAl alloy subjected to surface ion nitriding is obtained. According to the method, the surface of the TiAl alloy is bombarded by adopting high-energy ions before nitriding, impurities such as an oxidation film and oil dirt on the surface of a workpiece can be removed at the same time, the problem that the oxidation film hinders nitrogen permeation in the nitriding process is avoided, additional pretreatment is not needed, and the overall period is shortened; by optimizing the process parameters of ion nitriding, the time-consuming steps of slowly decomposing nitrogen atoms by depending on gases such as ammonia gas in atmosphere nitriding and then passively diffusing the nitrogen atoms are omitted, and the nitriding efficiency is greatly improved.

An AlO x A method for preparing an Al2O3 low-reflection, etch-resistant composite coating includes the following steps: In a first chamber, the surface of a substrate is cleaned by ion bombardment; in a second chamber, argon and oxygen are introduced, and at least one layer of Al2O3 is deposited on the surface of the substrate using pulsed DC magnetron sputtering. x Layer; containing AlO x The substrate of the layer is fed into the third chamber, argon and oxygen are introduced, and AlO is sputtered using pulsed DC magnetron sputtering. x An Al2O3 layer is deposited on the surface of the layer and cooled in the furnace to obtain AlO. x - Al2O3 low-reflection, etching-resistant composite coating. This invention constructs a non-stoichiometric Al2O3 composite coating within the composite coating. x A gradient structure of oxygen content gradually transitioning from a layer to a dense Al2O3 layer, with low oxygen content AlO2O3. x The layer has a high oxygen vacancy concentration and low reflectivity, which can effectively reduce the reflection intensity in the ultraviolet-visible band. The dense Al2O3 layer formed on the surface has good structural stability and chemical inertness, thus significantly improving the etching resistance of the coating in the plasma etching environment.

The present disclosure relates to systems and methods for multi-step directed patterning. A semiconductor process system includes an ion source configured to bombard a photoresist structure on a wafer. The semiconductor process system reduces a width of the photoresist structure by bombarding the photoresist structure with ions in a plurality of different ion bombardment steps having different characteristics.

Aiming at the problem that the service life of a device is shortened due to electrode damage caused by ion bombardment, the invention provides a grid regulation and control type vertical structure micro-nano plasma triode which is of a vertical structure and comprises a substrate, a lower electrode, a grid, an upper electrode, a vertical insulating layer and a horizontal insulating layer. The lower electrodes are arranged above the substrate, the grid electrode is arranged above the lower electrodes, the horizontal insulating layers cover the upper layer and the lower layer of the grid electrode, the vertical insulating layers are distributed on the side edges of the grid electrode, the upper electrodes are arranged above the upper horizontal insulating layers, the edges of the upper electrodes are flush with the edges of the vertical insulating layers, and a vertical air channel is formed between the two upper electrodes. The grid electrode can effectively regulate and control ion and electron distribution in a channel, collision ionization is increased, micro-nano plasma formation is promoted, and the working voltage of the device is reduced. In addition, the grid electrode can regulate and control the electric field distribution in the vertical channel, change the ion motion trail, inhibit high-speed ions from directly bombarding the electrode, and prolong the service life of the device.

This invention discloses a system and method for achieving atomic layer etching (ALE) and radical-enhanced deposition (REED) in a single chamber. The system features a switchable DC blocking capacitor for grounding an electrostatic chuck (ESC) to eliminate the plasma sheath, and employs high-power short-pulse RF to suppress ion bombardment during ALE surface modification and REED deposition steps, thereby achieving efficient processing and making it suitable for applications such as the fabrication of high aspect ratio structures.

The invention discloses plasma carburizing composite heat treatment equipment and process for a thin metal plate. The heat treatment equipment comprises a furnace body, a heating electrode plate, a pressurizing mechanism, a micro-motion mechanism, a plasma power supply, a gas supply system and a control system. The heat treatment process comprises the following steps: S1, pretreatment; s2, charging and vacuumizing; s3, ion bombardment cleaning; s4, performing first-stage pressurized carburization; s5, carrying out micro displacement; s6, second-stage pressurized carburization is conducted; s7, diffusion is carried out; s8, quenching is conducted; and S9, tempering. Heating, pressurizing and shaping, plasma carburizing, quenching and tempering are completed in the same vacuum furnace body in an integrated mode, workpieces do not need to be transferred midway, and oxidation and secondary deformation are avoided. Through the design of the four-foot hollow clamping head, the thin metal plate is stably supported and limited, meanwhile, the contact area is remarkably reduced, uniformly-distributed heat transfer points are formed, buckling deformation of the thin plate at high temperature is effectively restrained, and carburizing blind areas are reduced.

The invention belongs to the field of nuclear fuels, and particularly relates to a preparation method and application of a nitride nuclear fuel, the preparation method comprises the following steps: mixing an oxide raw material and a carbon source, and then pressing into a green body; and carrying out carbon thermal reduction and nitridation reaction on the green body by adopting a plasma method or a flash burning method to prepare the nitride nuclear fuel. According to the method, high-energy ion bombardment of plasma is utilized, so that the activity of reactants is remarkably improved, the carbon thermal reduction nitridation reaction is carried out at a lower temperature, the reaction temperature is reduced, and the reaction time is shortened, for example, high temperature is needed in a traditional carbon thermal reduction method; the reaction temperature can be reduced to be not higher than 1400 DEG C, meanwhile, the reaction period is shortened, and the reaction time can be shortened to be within 15 min. By adjusting the gas flow and energy parameters, the stoichiometric ratio of the nitride can be controlled, generation of an unstable intermediate phase is avoided, and meanwhile energy consumption is reduced.

The preparation method comprises the following steps: carrying out surface cleaning and activating treatment on a metal cooker base body, putting the cooker into PVD coating equipment, vacuumizing, configuring a titanium target, a multi-component composite target and an oxide target, cleaning the surface of the cooker by adopting ion bombardment, depositing a titanium transition layer with the thickness of 0.1-0.5 mu m, and carrying out vacuum treatment to obtain the PVD composite coating cooker. The thickness of the deposited copper-aluminum-silicon-chromium carbide composite functional layer is 4.5-5.5 microns, the thickness of the deposited oxide surface layer is 0.2-0.8 microns, and furnace cooling is carried out after film plating is completed. The three-layer gradient structure design is adopted, the titanium transition layer and the base body form metallurgical bonding, the copper-aluminum-silicon-chromium carbide composite functional layer provides hydrophobic and oleophylic performance, the oxide surface layer blocks oxygen and nitrogen diffusion, and the comprehensive performance of being high in film layer bonding force, resistant to high temperature and lasting and non-sticky is achieved.

The application discloses a high-densification alumina coating and a processing technology thereof, and belongs to the technical field of ceramic coating materials. The alumina coating comprises at least one alumina single layer, and a dense interface layer is formed on each alumina single layer by ion bombardment on the surface of the alumina single layer; the alumina single layer is composed of AlO x , wherein the oxygen content is 0

The application provides a vacuum pumping method and a sputtering coating method. The vacuum pumping method comprises the following steps: installing a target material in a coating chamber; isolating the coating chamber from the atmosphere, and then starting a vacuum pump; conveying a plate into the coating chamber; introducing working gas (Ar) into the coating chamber, starting a sputtering power supply, and forming a first electric field in the coating chamber, so that the working gas is converted into plasma, ions in the plasma bombard the plate, plate particles sputtered from the plate react with gas to be removed in the coating chamber and generate non-gaseous substances; eliminating the first electric field, stopping the introduction of the working gas, and continuing to pump high vacuum. The vacuum pumping method can shorten the vacuum pumping time required by the coating chamber.

The invention discloses inclined powder cleaning equipment which comprises a cavity used for being connected with an anode of a power source; the tray is obliquely arranged in the cavity, the tray is provided with a containing groove, the bottom of the tray is used for being connected with a cathode of a power source, the containing groove is used for containing powder to be cleaned, and after the cavity and the tray are powered on, plasma used for bombarding the powder on the tray can be generated between the cavity and the tray; the stirring blades are rotationally arranged on the tray and are used for stirring the powder; the driving element is used for driving the stirring blades to rotate; the rotating structure is used for driving the tray to rotate; and the vacuumizing device is communicated with the cavity and is used for enabling the interior of the cavity to be in a negative-pressure vacuum state. Ion bombardment is carried out on the surface of the powder, so that oxides, dirt and other impurities on the surface of the powder are removed; the tray can rotate around the axis of the tray due to the rotating structure, so that in the cleaning process of the powder, besides mechanical stirring of the stirring blades, stirring under the gravity of the powder under the action of the inclination angle is increased, and the whole cleaning process is more uniform and thorough.

The invention belongs to the technical field of material preparation, and particularly relates to a preparation method and application of a micro-pit with polyimide as a base material. The method provided by the invention mainly comprises the following steps: accelerating heavy ions by using an accelerator, bombarding polyimide by using the accelerated heavy ions, etching the polyimide by using an etching agent added with a corrosion inhibitor after the polyimide is damaged by the heavy ions to obtain micro-pits with specific diameters and depths, and cleaning and drying the etched sample. According to the method, the polyimide is impacted in an accelerated mode through heavy ions, the micro-pits are prepared, the limitation of a traditional photoetching technology is broken through, the patterns of the micro-pits are defined directly through heavy ion bombardment, a mask plate does not need to be used, the material cost is reduced, production interruption and extra cost caused by damage of the mask plate are avoided, and the production efficiency is improved. And the processing process is relatively simple, multiple complex photoetching and etching steps are not needed, the production efficiency is greatly improved, the production period is shortened, and the production cost is reduced.

The present invention relates to a method for plasma treating a target surface of a component, comprising the following steps: - obtaining a target surface on the component, - placing the component in a chamber of a plasma generator, - evacuating the chamber to a pressure of between 10 ‑6 and 10 mbar, - injecting a suitable gas into the chamber until the pressure in the chamber reaches between 10 ‑4 and 10 2 mbar, - generating an electric current discharge in the chamber via an electric generator to generate a plasma, - exposing the target surface of the component to the plasma for a predetermined time, depending on the power of the electric current discharge, the gas injected into the chamber and the material of the target surface, thereby deteriorating the surface condition of the target surface in order to increase its roughness to matte or more matte the target surface.

A method for removing carbon contamination from a silicon carbide chip includes: providing a substrate having opposing first and second surfaces; forming a device layer on the first surface of the substrate, the device layer having a source doped region; forming an interlayer dielectric layer on the source doped region; etching the interlayer dielectric layer to expose the surface of the source doped region, forming a contact hole; forming a first metal layer at the bottom of the contact hole; heat-treating the first metal layer and the source doped region to form a first ohmic contact layer and a first carbon contamination layer on the surface of the first ohmic contact layer; and performing a plasma gas cleaning operation to remove the first carbon contamination layer. Since the plasma gas cleaning operation is a dry removal method, specifically involving low-energy ion bombardment to remove the first carbon contamination layer, it can remove the first carbon contamination layer while avoiding damage to the first ohmic contact layer at the bottom of the first carbon contamination layer and the surface of the source doped region, thereby improving the electrical performance and reliability of the silicon carbide chip.

The invention provides a preparation method of a conductive plug and a semiconductor chip, and belongs to the field of power electronics. The preparation method of the tungsten plug comprises the following steps: preparing an epitaxial wafer, wherein the surface of the epitaxial wafer is provided with a via hole; sputtering a transition metal material into the via hole, and performing ion bombardment on the transition metal material in the via hole to form a transition metal layer; and forming a conductive metal layer on the surface of the transition metal layer to fill the via hole. According to the embodiment of the invention, the problem that the metal film layer formed during the preparation of the tungsten plug is easy to generate more defects can be improved, and the preparation yield of the tungsten plug is improved.

This invention discloses an aluminum nitride precision ceramic for semiconductor devices and its preparation method, relating to the field of ceramic materials technology for semiconductor devices. The invention utilizes a chemical vapor infiltration process to grow a thick hexagonal boron nitride thin film in situ on the geometrical outer surface and subsurface pore inner walls of a polycrystalline aluminum nitride ceramic substrate. This hexagonal boron nitride thin film alternates with aluminum nitride grains in the polycrystalline aluminum nitride ceramic substrate, forming a boron nitride / aluminum nitride superlattice protective layer on the surface. When high-energy arsenic or phosphorus ions bombard the surface, the hexagonal boron nitride thin film effectively absorbs and dissipates the ion bombardment kinetic energy through an interlayer slip mechanism. Furthermore, the low atomic numbers and light atomic weights of boron and nitrogen significantly reduce the physical sputtering yield of aluminum atoms, achieving comprehensive anti-sputtering protection while ensuring a high-strength bond between the protective layer and the substrate. It also maintains the intrinsic thermal conductivity and insulation properties of AlN ceramics, making it suitable for the operating conditions of high-energy ion implanters.

A planarization method includes the following steps. A silicon layer is deposited on a substrate, and a top surface of the silicon layer includes a lower portion and a bump portion protruding upwards from the lower portion. An ion bombardment etching process is performed to the silicon layer for reducing a surface step height of the silicon layer. The top surface of the silicon layer is etched by the ion bombardment etching process to become a post-etching top surface, and a distance between a topmost portion of the post-etching top surface and a bottommost portion of the post-etching top surface in a vertical direction is less than a distance between a topmost portion of the bump portion and the lower portion in the vertical direction before the ion bombardment etching process. Subsequently, a chemical mechanical polishing process is performed to the post-etching top surface of the silicon layer.

The invention discloses a continuous environment-friendly decorative black-plated steel strip based on magnetron sputtering and a preparation method of the continuous environment-friendly decorative black-plated steel strip, and belongs to the technical field of metal material surface treatment.The preparation method comprises the following steps that firstly, vacuum ion bombardment pretreatment is conducted on the steel strip; 2, argon and acetylene gas are introduced into reel-to-reel magnetron sputtering equipment, and a chromium target and / or a titanium target are / is adopted for sputtering; thirdly, a chromium carbide bottom layer and a titanium carbide surface layer are sequentially deposited; and 4, controlling the color and the performance of the plating layer by regulating and controlling the gas proportion, the sputtering power, the film layer thickness and the winding speed. Inert gas sputtering is adopted, no toxic waste liquid is discharged, and the RoHS standard is met; and the film layer is compact, strong in adhesive force and uniform in thickness, and the deviation is controlled within + / -1.2%.

The invention belongs to the technical field of thin films, and discloses a tin-based thin film and a preparation method and application thereof. The tin-based thin film is formed by depositing a tin-based material through a physical vapor deposition method, the deposition mode is gradient step-by-step deposition, the number n of times of gradient step-by-step deposition is larger than or equal to 2, and technological parameters of gradient step-by-step deposition meet the following relational expressions: when n is equal to 2, the first-time carrier plate moving speed is gt; the last moving speed of the carrier plate; when ngt; when 2, the first-time moving speed of the carrier plate is gt; the carrier plate moving speed gt of the middle times; and the last carrier plate moving speed. According to the method, a gradient step-by-step deposition method of multi-time plate walking is adopted, the thickness and component deviation of single-time plate walking are compensated, multi-time ion bombardment is used for promoting interdiffusion of interface atoms and accelerating lattice diffusion of doped elements, and the density of a surface layer is optimized through segmented deposition; and finally, the tin-based thin film with high uniformity, high crystallinity, strong stability and excellent electrical properties is prepared at low temperature.