12 results about "Field emission device" patented technology

The invention relates to the field of diamond materials, in particular to a preparation method of a diamond material and a semiconductor device.The preparation method specifically comprises the steps that a polyion liquid layer containing nanometer nickel powder is formed on the surface of a diamond film; then carrying out pyrolysis at the temperature of 400 to 500 DEG C, and then growing graphene at the temperature of 800 to 1000 DEG C; according to the method, the dependence on expensive coating equipment is broken through, the preparation cost is greatly reduced while the performance of the diamond material is guaranteed, and more economical preparation options are provided for industrialization of field emission devices, thermal management devices and high-frequency electronic devices.

Porous aluminum nitride (AlN) provides a greater surface area and higher permeability, which is especially desirable for advanced functional application. Porous or bulk aluminum nitride is very difficult to manufacture due mainly to its high melting point (e.g., 2200 degrees Celsius). A new processing method synthesizes porous aluminum nitride through a complete transformation from porous aluminum using a remarkably low nitriding or sintering temperature. The manufactured porous aluminum nitride foam can be used for such applications as filters, separators, heat sinks, ballistic armor, electronic packaging, light- and field-emission devices, and highly wear-resistant composites when infiltrated with metal such as aluminum, titanium, or copper.

The invention discloses a double-interface modulation type interlayer heterojunction field emission device and a preparation method thereof, the emission device comprises a support substrate, a bottom modulation layer, a cathode emission material and a top modulation layer which are sequentially arranged from bottom to top, the cathode emission material is formed on the upper surface of the bottom modulation layer in an in-situ growth mode, and the top modulation layer is formed on the lower surface of the bottom modulation layer. And the cathode emission material is clamped between the bottom modulation layer and the top modulation layer to form an interlayer heterojunction structure. According to the bottom modulation layer, parasitic resistance and contact resistance are reduced, waste heat loss is reduced, the driving voltage under the same target emission current is remarkably reduced, the effective emission current under the same voltage is higher, and the requirements of portable and high-density integrated equipment are met. The top modulation layer is arranged, electric field homogenization is achieved through the top modulation layer, current fluctuation is reduced to 5% or below from traditional more than 10%, the problem of single-point overheating is avoided, and the service life of the high-power semiconductor device is greatly prolonged.

The invention discloses an ultrasonic vortex field emission device based on a spiral diffraction acoustic grating and an ultrasonic vortex particle control method. The ultrasonic vortex field emission device comprises a substrate; the at least one spiral groove is formed in the substrate and is used for carrying out phase modulation on incident plane sound waves; the ultrasonic transducer is used for generating the incident plane sound wave and enabling the incident plane sound wave to be incident in a manner of being vertical to the surface of the substrate; wherein the substrate and the spiral groove form a planar spiral diffraction acoustic grating structure, and after the planar acoustic wave is modulated by the spiral diffraction acoustic grating, an ultrasonic vortex field with a spiral phase wavefront is generated behind an emergent surface. A complex vortex field generation system is simplified into a planar static structure of a substrate and a spiral groove, a complex multi-channel phase control circuit and an independent regulation and control system in an active technology are omitted, and the complexity, the manufacturing cost and the operation difficulty of the system are reduced.

The invention belongs to the technical field of electrical device testing, and discloses a field emission volt-ampere characteristic testing method and device, and the method comprises the steps: an initial step: initializing a volt-ampere testing curve, and taking the minimum value of a voltage scanning range as a current voltage value; a testing step: inputting the current voltage value into the field emission device to obtain a detection current value; updating a volt-ampere test curve according to the current voltage value and the detection current value; judging whether the detection current value is greater than a preset current test threshold value or not; if not, adding the current voltage value and the current stepping voltage to obtain an updated current voltage value; judging whether the updated current voltage value exceeds a voltage scanning range or not; if yes, updating the voltage scanning range according to a preset expansion proportion, and returning to the initial step; and if not, returning to the testing step. According to the invention, by dynamically adjusting the voltage scanning range and the stepping voltage, both the testing efficiency and the testing precision are considered.

The application discloses a silicon flower structure and a manufacturing method thereof, a field emission device and a manufacturing method of a photovoltaic device, and the manufacturing method of the silicon flower structure comprises the following steps: placing a silicon wafer to be formed with a silicon flower structure on a base of a reaction chamber; under preset process conditions, etching gas containing carbon and fluorine elements is introduced into the reaction chamber; the etching gas is ionized to form plasma, and the plasma etches the surface of the silicon wafer for a preset process time, the preset process time is not less than 60 min, so as to form a plurality of silicon flower structures with a spacing of 1-100 mu m on the surface of the silicon wafer. The silicon flower structure manufactured by the method of the application has a simple process, and the coverage of the silicon flower structure can be controlled by controlling the process time.

The invention belongs to the technical field of field emission testing. The method comprises the following steps: initializing a test system; obtaining aging parameters; performing an initial volt-ampere characteristic test on the field emission electron source, and performing FN conversion on a test result to obtain characteristic parameters of a cathode; analyzing the test result and the characteristic parameter, and correcting the aging parameter based on the analysis result; aging the field emission according to the corrected aging parameters, and collecting emission current in real time; evaluating the aging of this round based on the emission current, and if a preset requirement is met, ending the aging; if not, carrying out secondary volt-ampere characteristic test and FN conversion to obtain characteristic parameters of the field emission cathode; comparing the characteristic parameters obtained by the two tests, and evaluating whether the emission performance reaches a preset standard after the first aging; if the preset standard is reached, aging is ended; if not, the aging strategy is automatically adjusted, and the next round of aging is carried out. Field emission can obtain aging treatment matched with the state of the field emission, and the performance of the electron source is remarkably improved.

This invention discloses a plasmon-enhanced carbon nanotube field emission device, its fabrication method, and its applications. The device includes an insulating substrate, a concentric circular metal grating on the substrate, anode and cathode electrodes located in the central region of the grating, and carbon nanotubes bridging the electrodes and forming nanoscale gaps. By designing the grating period to match the incident laser wavelength, surface plasmons can be excited, generating a localized electric field enhancement at the center, thereby significantly reducing the electron tunneling barrier at the carbon nanotube tip and increasing the field emission current. This invention also provides a corresponding fabrication method, including the patterning of the grating and electrodes, the deposition and patterning of the carbon nanotube thin film, and the formation of the nanoscale gaps. This device has a simple structure, effectively avoids thermal damage caused by direct laser radiation, and has application potential in fields such as field emission enhancement, optical signal detection, and optoelectronic modulation.

An electron source (E1) comprises a columnar electrode substrate (S1) that is disposed in an orientation in which an end part thereof on one axial-direction side faces an anode (T). The electrode substrate (S1) has: an annular cutout recess (11) that extends along the circumferential direction at the peripheral edge of the end part of the electrode substrate (S1) on the one axial-direction side; a small-diameter portion (21) that has a shape protruding to the one axial-direction side on the inner-peripheral side of the cutout recess (11) in the electrode substrate (S1); and a large-diameter portion (12) that is the end part of the electrode substrate (S1) on the other axial-direction side and has a greater diameter than the small-diameter portion (21). An electron emission part (3a) is provided to the anode-side facing surface (2a) of the small-diameter portion (21).

A backend field emission device may include a field emission device in a backend of line (BEOL) layer, such as an interconnect layer. In one example, a backend field emission device includes a first electrode coupled with a first conductive interconnect, a second electrode coupled with a second conductive interconnect, an airgap between the first electrode and the second electrode, and a third electrode between the first electrode and the second electrode and coplanar with the airgap.

This technology contributes to making it easier to obtain desired handling characteristics in electron sources and to making it easier to control the focusing of electron beams as desired. [Solution] The electron source E1 includes a columnar electrode base S1 positioned such that one end in the axial direction faces the anode T. The electrode base S1 has an annular notched recess 11 extending circumferentially along the peripheral edge of the end of the electrode base S1 on one side in the axial direction, a small-diameter portion 21 that protrudes to the one side in the axial direction on the inner circumference side of the notched recess 11 of the electrode base S1, and a large-diameter portion 12 at the other end of the electrode base S1 on the axial direction, which is larger in diameter than the small-diameter portion 21. An electron emission portion 3a is provided on the anode-facing surface 2a of the small-diameter portion 21.

This technology contributes to making it easier to obtain desired handling characteristics in electron sources and to making it easier to control the focusing of electron beams as desired. [Solution] The electron source E1 includes a columnar electrode base S1 positioned such that one end in the axial direction faces the anode T. The electrode base S1 has an annular notched recess 11 extending circumferentially along the peripheral edge of the end of the electrode base S1 on one side in the axial direction, a small-diameter portion 21 that protrudes to the one side in the axial direction on the inner circumference side of the notched recess 11 of the electrode base S1, and a large-diameter portion 12 at the other end of the electrode base S1 on the axial direction, which is larger in diameter than the small-diameter portion 21. An electron emission portion 3a is provided on the anode-facing surface 2a of the small-diameter portion 21.