The invention discloses an electrophoretic glass
passivation method for improving the electrical property of a
semiconductor device and the
semiconductor device, and relates to the technical field of
semiconductor devices.The method comprises the steps that a
semiconductor chip to be passivated is obtained, electrophoretic glass liquid is prepared, the
semiconductor chip is placed in the electrophoretic glass liquid,
electrophoretic deposition conditions are applied, and the
semiconductor chip is passivated; depositing the glass
powder on the surface of the semiconductor
chip to form a glass wet film; carrying out
sintering annealing treatment on the glass wet film, introducing a mixed
atmosphere of
oxygen and
nitrogen into a
sintering furnace in the
sintering annealing treatment, and carrying out heating, heat preservation and cooling according to a preset multi-stage
temperature curve so as to melt and densify the glass wet film and form a glass
passivation layer; and obtaining the
semiconductor device on which the glass
passivation layer is formed. Through the technical scheme of the invention, the risks of glass cavities, cracks and stripping are reduced, the surface insulation and
voltage endurance capability of the device is improved, the electric leakage and
failure rate are reduced, and the electrical consistency and long-term reliability are improved.