2826 results about "Contact resistance" patented technology

The invention relates to the technical field of data processing, in particular to an intelligent analysis system for electric energy quality and read data, which comprises a data fusion module, a modeling module, an analysis module, a detection module, an optimization module and a control module. The data fusion module aligns data of an electric meter terminal, power grid monitoring equipment and an environment sensor through a sliding time window, and the analysis module calculates a power grid node loss transfer coefficient based on a graph neural network and fuses transformer no-load loss and line contact resistance parameters to generate a dynamic line loss evaluation matrix. And the detection module identifies the power consumption characteristic deviation degree through a random forest classifier, and generates a priority management strategy in combination with a multi-dimensional abnormal scoring model. The control module adaptively selects a communication protocol to execute a regulation and control instruction according to a network state, a heartbeat detection mechanism feeds back operation data of a governance device in real time, model parameters are driven to be iteratively updated, and dynamic cooperation of power supply quality optimization and line loss governance is achieved.

The invention relates to the technical field of big data analysis, in particular to a contact defect detection system and method based on big data, and the system comprises a multi-dimensional data capture module, a time sequence analysis module, a trend evaluation and anomaly recognition module, a future state prediction module, and a fault classification and diagnosis module. According to the invention, by deeply capturing and screening contact operation state data, the accuracy of input data is ensured, abnormal interference of contact resistance is avoided, the data validity is improved, current impact fluctuation points are identified, the sensitivity to operation abrupt change is enhanced, the accuracy of time sequence analysis is ensured, long-term offset is tracked, the wear identification capability is improved, and the future state is accurately predicted. The method is advantaged in that maintenance plan precision is improved, contact pressure reduction trend is analyzed, fault classification is refined, defect identification accuracy is improved, data screening, trend tracking, offset characteristic calculation and fault classification are optimized, accurate detection is realized, and equipment reliability and operation safety are improved.

The invention relates to the technical field of target detection, in particular to an AI visual identification technology-based power monitoring system, which comprises a multispectral monitoring module, a thermal anomaly identification module, a dynamic region correction module, a structure trend prediction module and an abnormal mode judgment module. According to the method, the visible light image and the infrared thermal imaging data are subjected to joint analysis, the appearance contour, the component arrangement and the thermal feature information of the power equipment are extracted from multiple angles, equipment identification and temperature anomaly detection are realized, a sliding time window is constructed to extract the morphological change gradient, and the structural degradation trend of the equipment is accurately predicted. Through calculating the joint posterior probability distribution of the abnormal parameters such as the cable current-carrying capacity, the switch contact resistance value and the line power factor, and comparing the probability gradient value of the abnormal mode, the abnormal mode matching is realized, the equipment fault early warning capability is improved, and the accuracy of target detection, the precision of abnormal identification and the reliability of equipment state evaluation are improved.

The invention relates to the technical field of wiring terminals, in particular to an intelligent testing method and system for the contact resistance of a wiring terminal, and the method comprises the following steps: adjusting the resistance testing frequency according to the environment temperature to adapt to different conditions, combining current and voltage data, analyzing the historical change trend of the resistance, predicting the potential change range, and obtaining the contact resistance of the wiring terminal through the current and voltage data. Evaluating the mutual influence with the resistor, judging the abnormal reason of the resistor, adjusting a test scheme according to fault diagnosis, predicting potential faults, and making a test plan. According to the invention, through environment induction and data analysis, the resistance test frequency is adjusted in real time to adapt to environment change, so that the resistance measurement in the test process is more sensitive and accurate, the response speed and data quality of the test process are improved, historical and current resistance data are automatically analyzed, potential faults can be effectively predicted and identified, and the test efficiency is improved. Problems caused by operation errors are reduced, and a prospective fault prediction function enables the adjustment of the test period to be more scientific.

The invention provides a multi-channel contact resistance intelligent test device and method, the contact resistance intelligent test device is integrated with a plurality of different types of resistance test channels, and the resistance test channels comprise a conduction test channel, a static resistance test channel and a dynamic resistance test channel. The device comprises an upper control module used for receiving a channel test parameter of a contact resistor and generating a channel selection test instruction based on the channel test parameter; the multi-channel switching module switches to a target test channel of a corresponding type based on the channel selection test instruction; the resistance measurement module applies current of a corresponding type according to the type of the target test channel, collects the voltage of the target test channel, and obtains a resistance value according to the voltage and the current; and the signal processing module performs noise reduction processing on the resistance value to obtain a target resistance value, and evaluates the change trend of the target resistance value, so that the problems of low test efficiency, dynamic data missing and personal error accumulation of a traditional method are solved, and the subjective deviation of manual interpretation is eliminated.

The invention relates to the technical field of equipment maintenance, in particular to a distribution box remote diagnosis and maintenance system which comprises a voltage deviation detection module, a node hot stacking identification module, a channel stability classification module, a contact aging trend evaluation module and a period adjustment trigger module. According to the method, peak value change of effective voltage in each channel period in the distribution box is collected and compared with a preset criterion so as to accurately identify an abnormal discharge unit and accurately position a potential risk channel, and the change rate of equivalent series capacitance, contact conductance and contact resistance of a node is continuously sampled in a non-power-on state so as to accurately identify the potential risk channel. According to the method, multi-parameter same-trend change characteristics are determined, the contact aging process is accurately evaluated by integrating the parameter trend, the node trend and the maintenance plan period remaining time are subjected to cross comparison, the maintenance task advance opportunity is automatically judged, the maintenance plan is actively adjusted, the node fault missing detection risk is effectively reduced, and the maintenance timeliness and accuracy are remarkably improved.

The invention discloses a semiconductor device based on two-dimensional semi-metal interface optimized contact and a preparation method thereof, which are applied to devices including a two-dimensional semiconductor-based metal-semi contact structure, such as thin film transistors, Schottky junction diodes / transistors and the like. According to the invention, the two-dimensional semi-metal interface layer is introduced between the metal electrode (source and drain electrodes) and the two-dimensional material (conductive channel) through PVD and CVD processes, so that pollution and defects caused by additional transfer steps are avoided, preparation of the interface layer with large area, high uniformity and controllable thickness can be realized, and industrial requirements are met. According to the semiconductor device provided by the invention, the two-dimensional semimetal is introduced as the interface layer, so that the contact resistance between the source and drain electrodes and the conductive channel is obviously optimized, Fermi level pinning is eliminated, and the adjustable Schottky barrier height is realized; and a brand new solution is provided for development and industrial application of a metal-semiconductor contact structure device of a high-performance two-dimensional semiconductor.

The invention discloses an electric connector fault prediction method, and the method comprises the steps: synchronously obtaining multiple types of time series data of a contact area of a target electric connector in a preset time window based on a preset data collection device, and the time series data comprise temperature spatial and temporal distribution time series data, contact resistance transient time series data and a surface image sequence; performing feature analysis on the multi-source time sequence data by using a preset time sequence coupling sign extraction mechanism to obtain a multi-source phase change feature vector of the target electric connector in the current time window; inputting the multi-source phase change feature vector into a pre-trained electric connector health state prediction model, and outputting a prediction result of the health state of the target connector at the current moment, including a health state index; and performing differential early warning based on the predicted health state index of the target connector. Therefore, early and quantitative accurate prediction of the state of the electric connector is realized.

The invention relates to a method for preparing a carbon nanotube reinforced copper-silver-based electrical contact composite material based on a liquid phase atomization method, and belongs to the technical field of electrical contact preparation. The preparation method comprises the following steps: carrying out hot pressed sintering on mixed powder of reinforcement powder, copper powder and silver powder, solidifying the powder to form an Ag-coated CNTs / Cu-Ag composite material block, and then preparing the Ag-coated CNTs reinforced Cu-Ag-based electrical contact composite material through a process route of solid solution, extrusion and aging. The preparation method disclosed by the invention is simple to operate and stable in preparation process, and the mechanical and electrical properties of the prepared composite material can respectively reach 157HV and 103% IACS (International Annealed Copper Standard) and above; according to the method, ablation and damage of the surface of the electrical contact in the working process are relieved, the viscosity of a molten pool is increased, the contact resistance in the electrical contact process can be reduced, the current concentration phenomenon and the temperature rise effect at a contact point can be relieved, the mass loss of an electrical contact material is reduced, the maintenance cost is reduced, and the method has good application prospects in the field of electrical contact materials.

The invention discloses a temperature controller contact resistance fault monitoring and positioning method and system, and belongs to the technical field of contact resistance testing. According to the method, the corresponding initial database is constructed according to the models of different temperature controllers; performing low-energy-consumption real-time monitoring on the contact resistance in the temperature controller by adopting a resistance fluctuation threshold value monitoring method in combination with the initial database; when the fluctuation of the contact resistor is monitored, the infrared thermal imaging module is started to accurately determine the position information and the fault degree of the contact resistor according to a relative temperature difference method in combination with a resistance threshold fluctuation value.

The invention relates to the technical field of batteries, in particular to a battery which comprises a positive plate, a negative plate and a diaphragm located between the positive plate and the negative plate, the diaphragm comprises a base material layer and a ceramic layer located on the surface of one side of the base material layer, a first polymer glue layer is arranged on the surface of the side, away from the base material layer, of the ceramic layer, and a second polymer glue layer is arranged on the surface of the side, away from the ceramic layer, of the base material layer. The diaphragm in the battery can provide certain binding force for the expansion of the silicon negative electrode, the contact resistance at an interface is reduced, the stress acting on the positive plate during the expansion of the silicon negative electrode is reduced, and the transmission rate of lithium ions in the battery is improved, so that the cycle performance and the safety performance of the battery are improved.

The invention belongs to the technical field of power equipment state monitoring, and discloses a cable branch box operation state intelligent evaluation system based on multi-sensor fusion, which comprises a state acquisition module used for acquiring a partial discharge signal, a voltage fluctuation signal, a terminal temperature signal and a terminal contact resistance signal of a cable branch box in an operation process, constructing a multi-source operation state parameter set of the cable branch box through time synchronization and physical quantity normalization processing; the mutual coupling analysis module is used for performing transient correlation deduction on the partial discharge signal and the corresponding voltage fluctuation signal based on the multi-source operation state parameter set to obtain a partial discharge-voltage coupling amount; when the partial discharge-voltage coupling amount exceeds a preset partial discharge-voltage coupling amount threshold value, determining that partial discharge abnormity caused by insulation degradation exists in the cable branch box; comprehensive and accurate evaluation of the operation state of the cable branch box is realized, and reliable support is provided for safe operation and maintenance of equipment.

The invention relates to the technical field of nano-probe detection, and particularly discloses a nano-probe test system for feeding back contact force in real time, comprising the following modules: a probe execution module comprising a nano-probe and a piezoelectric ceramic driver, the nano-probe realizing three-dimensional micro-displacement and establishing controllable contact with a wafer; the multi-dimensional signal sensing module is used for synchronously acquiring a contact resistance signal and a nanoprobe deformation signal; the data processing and control module is used for realizing signal analysis, force value calculation and driving control of a contact resistance signal and a nanoprobe deformation signal; the man-machine interaction module comprises a touch display screen and a real-time data recorder and is used for realizing visualization of force signals; the data processing and control module carries out cooperative analysis on the contact resistance signal and the nanoprobe deformation signal obtained by the multi-dimensional signal sensing module to obtain the real-time contact force of the nanoprobe and the wafer. The system solves the problem that a traditional nanoprobe detection system cannot feed back the contact force in real time.

The invention relates to the technical field of electronic component testing for investigating or analyzing internal microstructures and physical properties of materials by utilizing an electrical means, and discloses an online testing and analyzing method for physical properties of electronic component materials, which comprises the following steps of: constructing a composite excitation signal formed by linearly superposing a main carrier voltage and a perturbation wave voltage; applying the signal to a to-be-tested electronic component and acquiring response current; and extracting an intermodulation current amplitude at an intermodulation frequency point in the frequency spectrum of which the linear response interval is excluded, calculating a nonlinear response coefficient of the material in combination with the excitation amplitude, and comparing the nonlinear response coefficient with a preset degradation threshold so as to judge whether the nonlinear response coefficient is qualified or not. By extracting intermodulation components which cannot be generated by linear contact resistance, physical isolation of external contact noise in a frequency domain is realized, and the problem that contact resistance fluctuation and material intrinsic aging cannot be distinguished in a traditional linear impedance test is solved.

The invention relates to a direct current motor with an anti-electromagnetic interference structure in the field of motors, which is characterized in that the surfaces of a commutator and an electric brush are blown in real time through a magnetic shielding cylinder arranged on the outer side of the commutator and an air blowing blade arranged in the magnetic shielding cylinder, and carbon powder on the surfaces of the commutator and the electric brush is cleaned; the commutator and the electric brush are subjected to synchronous blowing heat dissipation, so that the commutator and the electric brush have relatively good contact stability, the condition of contact resistance increase caused by carbon powder accumulation is reduced, the probability of arc generation between the commutator and the electric brush is reduced, and the electromagnetic compatibility of the motor is further improved; the influence of a high-frequency magnetic field generated by the arc on a rotor winding coil is reduced, and electromagnetic interference is further reduced; in addition, the insulating groove formed in the commutator improves the collecting and cleaning effects of the carbon powder, and the insulating groove is matched with the diversion disc to realize ejection of the lower contact surface of the electric brush, so that the cleaning effect of the carbon powder is further improved.

The invention relates to a photovoltaic cell preparation method, a photovoltaic cell, a laminated cell and a photovoltaic cell module. Providing an initial battery piece; depositing and forming a protective layer on the surface; carrying out laser treatment twice; printing and sintering to form an electrode; and carrying out at least two times of laser-assisted sintering on the electrode. According to the photovoltaic cell preparation method, the protection layer at the first area is removed, the doping concentration at the first area is improved, and at least two times of laser-assisted sintering are combined, so that on one hand, the metal contact area is optimized, the usage amount of silver paste is reduced, the material cost is reduced, and meanwhile, paste contact sintering is enhanced; damage caused by laser grooving doping is removed; and on the other hand, the doping concentration is optimized, the contact resistance is remarkably reduced, the open-circuit voltage and the filling factor are favorably improved, the shading loss is reduced, and the current collection efficiency is ensured, so that the photoelectric conversion efficiency and the reliability of the cell are remarkably improved, the production process is simplified, and the production cost is reduced.

The invention provides a solar cell and a photovoltaic module, and relates to the technical field of photovoltaics. The battery includes: a silicon substrate including a surface having an N region and a P region; the N-type doped layer is positioned on the N region of the silicon substrate; the P-type doped layer is located on the P region of the silicon substrate; the first electrode is in contact with the P-type doped layer; the second electrode is in contact with the N-type doped layer; the first electrode and the second electrode both contain metal elements; the content of metal elements in a region corresponding to the first electrode in the P-type doped layer is greater than the content of metal elements in a region corresponding to the second electrode in the N-type doped layer. According to the invention, the contact resistance corresponding to the first electrode can be reduced, the contact difference between the P region and the N region can be reduced, good contact between the P region and the N region is realized at the same time, and the efficiency of the solar cell is improved.

The invention relates to the technical field of circuit breaker equipment, in particular to a fault type identification method based on a circuit breaker intelligent algorithm. Comprising the steps of collecting environment temperature data of an environment where the circuit breaker is located in real time through a temperature sensor, dynamically monitoring mechanical wear degree data of a contact and an operating mechanism of the circuit breaker through a displacement sensor, and obtaining surrounding electromagnetic interference intensity data through an electromagnetic interference detection module; inputting the environment temperature data, the mechanical wear degree data and the electromagnetic interference intensity data to a processor integrated with a multi-factor dynamic coupling model, wherein the processor calculates actual contact resistance, interfered actual current and fault characteristic values based on the multi-factor dynamic coupling model; the processor identifies the fault type of the circuit breaker according to the size and the change range of the fault characteristic value in combination with a preset fault type judgment rule; the method can effectively cope with the influence of the factors, and improves the fault type recognition accuracy.

The invention discloses a passivation contact cell structure and a preparation method thereof, the structure comprises a silicon substrate, and the back surface of the silicon substrate comprises a metal contact area and a non-metal contact area; a metal contact area on the back face of the silicon substrate is of a suede structure, and the suede structure is sequentially provided with a back face first tunneling oxide layer, a back face first doped polycrystalline silicon layer, a back face second tunneling oxide layer, a back face second doped polycrystalline silicon layer, a back face aluminum oxide layer, a back face silicon nitride layer and a back face electrode in a stacked mode from inside to outside. A non-metal contact area on the back face of the silicon substrate is of a polished face structure, and a first back face tunneling oxide layer, a first back face doped polycrystalline silicon layer, a back face aluminum oxide layer and a back face silicon nitride layer are sequentially arranged on the polished face structure in a stacked mode from inside to outside. According to the battery structure, parasitic absorption can be reduced, current gain is brought, diffusion of silver ions in electrode slurry can be inhibited, and metal recombination is improved; the interface contact resistance can be obviously improved, and the cell efficiency can be improved.

The invention aims to provide an on-line monitoring device and a detection method for an electrical loop, and relates to a method and a system for dynamically calculating a conductor or contact resistance value and predicting a conductor or connection point degradation risk by acquiring current and voltage data of a conductor or an electrical connection point in real time, and a method and a system for dynamically analyzing a resistance change trend to determine a conductor or connection point degradation risk. Early warning of the health state of the conductor or the connection point is achieved, and the electrical fire prevention and control capability can be improved. The system comprises an electrical loop, a current detection module and a voltage detection module, the current detection module is arranged in the electrical loop to be detected, the voltage detection module is connected to the two ends of the electrical loop, and the current detection module and the voltage detection module are both in communication connection with a server through a data processing module and a networking module. The method is applied to the technical field of AC / DC power supply and distribution system electrical equipment / line resistance and electrical connection point contact state monitoring.

The invention relates to the technical field of solar cells, and particularly discloses a high-boron-doped single-mask TBC solar cell structure and a manufacturing method thereof.In the process of forming a patterned region, a P region does not need a mask structure, and through the combination of boron diffusion doping, annealing and two-time laser doping treatment, the high-boron-doped single-mask TBC solar cell structure is obtained. The boron atom doping concentration of the polycrystalline silicon layer is greatly improved, so that the boron-doped polycrystalline silicon layer in the P region is high in doping concentration and uniform in doping. According to the TBC solar cell prepared by the method, the processes of preparing and removing the mask structure are simplified, the technological process is short, the manufacturing cost is low, the contact resistance is reduced, the passivation effect is improved, the filling factor of the cell is increased, and the efficiency of the cell is improved. And the open-circuit voltage and the photoelectric conversion efficiency of the battery are improved.

The invention relates to a method for improving epitaxial growth quality of a tunnel junction cascade semiconductor laser. The invention innovatively provides a strain superlattice gradient repair technology. By designing a low-temperature low-speed nucleation-high-temperature high-speed epitaxy composite growth mode, a periodic superlattice buffer layer is introduced to a tunnel junction interface. Wherein lattice strain relaxation is achieved at the rate of 0.5-2 / s in the low-temperature stage, defect coverage is completed at the rate of 4-8 / s in the high-temperature stage, and dislocation line bending is terminated on a superlattice interface through thermodynamic regulation and control. Compared with the traditional process, the scheme can obviously improve the crystal quality, and does not increase the specific contact resistance of the tunnel junction interface.

The invention discloses a composite conductive filler, a shielding material and a cable, the composite conductive filler comprises the following raw materials: conductive carbon black, carbon nanotubes and liquid metal, and the mass ratio of the conductive carbon black to the carbon nanotubes to the liquid metal is (80-90): (1-15): (1-12). The composite conductive filler provided by the invention has a ternary synergistic efficient conductive network structure, the contact resistance between the conductive fillers is remarkably reduced, the melt index of the composite conductive filler is greatly improved, meanwhile, micropores of the material can be filled at high temperature, the thermal cycle aging property of the material is remarkably reduced, and the service life of the material is prolonged. The integration of a high-stability conductive network, good processing fluidity and excellent interface thermal mechanical performance is realized. The key technical problem that conductivity, processability and long-term stability of a high-voltage cable semi-conductive shielding material are difficult to consider at the same time is solved, and particularly, the high-voltage cable semi-conductive shielding material can be applied to ultra-high voltage scenes of 110 kV and above.

The utility model discloses a low-leakage double-signal test probe, which comprises a probe arm, a double-tip coaxial probe and a pair of connectors are regularly mounted on the probe arm, the pair of connectors comprises a Force end connector and a Sense end connector, two tips at the front end of the double-tip coaxial probe are bent towards each other and are close to each other but not in contact to form a double-tip structure, and the Force end connector is connected with the Sense end connector. And two needle rods at the rear end of the connector are electrically connected to the Force end connector and the Sense end connector respectively. According to the utility model, through the designed double-needle-point structure, the contact area between the needle point and the PAD can be increased, so that the contact resistance between the needle point and the PAD is effectively reduced, and the parasitic resistance of the probe and the contact resistance between the needle point and the PAD are perfectly eliminated. Meanwhile, the needle point only needs to be in effective contact with the PAD, the requirement for the needle inserting depth is low, damage to the PAD is small, the service life of the PAD can be remarkably prolonged, and the accuracy of a test result can still be guaranteed after repeated testing.

The invention belongs to the technical field of power equipment, and discloses a bus duct plugging device, which comprises a plugging box, a plugging box and a conductive contact piece, the plug box is used for being assembled on a shell of the bus duct; the jack box is provided with a grounding piece; the conductive contact piece is arranged on the grounding piece or the shell; when the plug box is plugged in the plug box, the grounding piece abuts against the shell through the conductive contact piece. The side, making contact with the grounding piece, of the conductive contact piece is a first metal layer made of the same material as the grounding piece, the side, making contact with the shell, of the conductive contact piece is a second metal layer made of the same material as the shell, and the first metal layer and the second metal layer are made of different metal. According to the bus duct plugging device, the contact resistance of the contact surface between the grounding piece and the shell can be reduced, the grounding reliability is ensured, the oxidation reaction of the grounding piece and the shell caused by contact of different metals is effectively prevented, and the long-term effectiveness of grounding is improved.

Techniques are provided to form an integrated circuit having backside epaxially grown source or drain regions in addition to the frontside source or drain regions to reduce backside contact resistance. A semiconductor device includes a gate structure around or otherwise on a semiconductor region. The gate structure includes a gate dielectric and a gate electrode. The substrate beneath the semiconductor device may be removed from the backside to expose a subfin region beneath the semiconductor region. The subfin region may be removed using a backside etch to open a backside recess that exposes a bottom surface of a given frontside source or drain region. A backside source or drain region may be grown on a bottom surface of the given frontside source or drain region and remain within the backside recess or extend out of the backside recess.

The invention provides a low-on-resistance shield gate trench MOSFET fault diagnosis method and system, and relates to the technical field of MOSFET fault diagnosis, and the method comprises the steps: applying preset transient electrical excitation to a contact interface of a probe and a wafer bonding pad and an MOSFET before the steady-state on resistance of the MOSFET is measured; according to the obtained electrical response information of the contact interface and the MOSFET under each transient electrical excitation effect, constructing a transient feature vector; analyzing the transient feature vector according to a preset discrimination rule for contact part abnormity and a discrimination rule for device structure defects to determine whether an abnormity source is the contact part abnormity or the device structure defects; according to the determined abnormal source, the measured on-resistance value is adjusted, and the problem that the test system misjudges that the on-resistance of the device is abnormally increased due to instantaneous fluctuation of the contact resistance caused by the change of the microscopic geometrical shape of the tip of the probe is solved.

The invention discloses a current-carrying capacity analysis system and method for a copper-aluminum transition temporary drainage wire clamp, and relates to the technical field of wire clamp current-carrying capacity analysis, and the system comprises a wire clamp fastening force analysis module which is used for obtaining historical fastening force data, monitoring the relation between the current fastening force and contact resistance in real time, constructing a temperature change model, and analyzing the temperature change model; the optimal fastening force is determined based on an optimization model of the fastening force and the temperature, and the system comprises a first parameter acquisition unit, a wire clamp performance analysis unit and a fastening force control unit; the current-carrying capacity influence analysis module is used for determining the maximum current-carrying capacity of the wire clamp under the optimal condition by analyzing the influence of the fastening force and the temperature on the current-carrying capacity of the wire clamp, and comprises a second parameter acquisition module and a current-carrying capacity analysis unit; the wire clamp abnormity warning module is used for setting three-level warning and comprises a first-level abnormity warning module, a second-level abnormity warning module and a third-level abnormity warning module. According to the invention, the service life of the equipment is obviously prolonged, and the maintenance cost is reduced.

The invention relates to the technical field of electronic connector performance monitoring, in particular to a connector performance detection method, and aims to solve the problem that a method for realizing performance early warning through dynamic correlation analysis of vibration signals and contact resistance in the prior art is not suitable for an L-shaped pin connector without a sheath. According to the method, micro-strain signals and contact resistance signals are synchronously collected, analysis time periods are divided in combination with plugging events, the plastic deformation accumulation degree and signal response delay characteristics are quantitatively evaluated, performance degradation coefficients are generated through fusion, and trend analysis is carried out; the problem that the relevance between the mechanical deformation and the electrical performance cannot be quantitatively evaluated in the prior art is effectively solved, and the method has the advantages of realizing early warning, improving the monitoring accuracy and reducing the maintenance cost.

The invention discloses a gallium nitride power adapter and a use method thereof, and relates to the technical field of power adapters, the gallium nitride power adapter comprises an adapter body, the adapter body comprises an equipment body, the bottom of the equipment body is fixedly provided with a plug, and the top of the equipment body is provided with a plug wire hole; according to the invention, through the cooperative use of the protection unit and the vacuum unit, the purpose of ensuring the anti-oxidation effect can be achieved, so that the metal surface of the plug can be covered by the telescopic protection sleeve after the adapter is used and pulled out every time, and the metal surface is ensured to be completely isolated from the outside. And meanwhile, a vacuum effect is applied to the interior of the telescopic protective sleeve, so that the oxidation phenomenon of the metal surface of the plug can be effectively slowed down, the influence on the conductive effect caused by the increase of the contact resistance of the metal surface is avoided, and the subsequent internal current conversion effect can be ensured not to be influenced.