3879 results about "Active matrix" patented technology

A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.

A method for fabricating an AMOLED pixel includes forming a transparent semiconductor layer on a substrate and forming a first channel layer of the switch TFT, a lower electrode of a storage capacitor and a second channel layer of a driving TFT. A first dielectric layer is formed over the substrate. A first opaque metal gate of the switch TFT, a second opaque metal gate of the driving TFT and a scan line are formed on the first dielectric layer. A first source and a first drain of the switch TFT are formed in the first channel layer and a second source and a second drain of the switch TFT are formed in the second channel layer. A patterned transparent metal layer is formed on the first dielectric layer. A data line is formed over the substrate. An OLED is formed over the substrate.

An active matrix display comprising a light control device and a field effect transistor for driving the light control device. The active layer of the field effect transistor comprises an amorphous.

In a display panel, each pixel has a display element that emits light when fed with electric power, a writing transistor, a driving transistor that drives the display element, a first capacitive element that is provided in series with a line connecting the second electrode of the writing transistor and the control electrode of the driving transistor, and an adjustment transistor that, during a reset period, is turned on to feed a voltage commensurate with the electrode-to-electrode voltage of the display element to the writing-transistor-side electrode of the first capacitive element. A control signal generation circuit is provided that, during the reset period, lets a voltage commensurate with the light emission start electrode-to-electrode voltage of the display element be held in the first capacitive element.

A thin film device fabrication method in which a thin film device formed on a substrate are transferred to a primary destination-of-transfer part and then the thin film device is transferred to a secondary destination-of-transfer part. A first separation layer (120) made of such a material as amorphous silicon is provided on a substrate (100) which allows passage of laser. A thin film device (140) such as TFTs are formed on the substrate (100). Further, a second separation layer (160) such as a hot-melt adhesive layer is formed on the thin film devices (140), and a primary destination-of-transfer part (180) is mounted thereon. The bonding strength of the first separation layer is weakened by irradiation with light, and the substrate (100) is removed. Thus, the thin film device (140) is transferred to the primary destination-of-transfer part. Then, a secondary destination-of-transfer part (200) is attached onto the bottom of an exposed part of the thin film device (140) via an adhesive layer (190). Thereafter, the bonding strength of the second separation layer is weakened by such means as thermal fusion, and the primary destination-of-transfer part is removed. In this manner, the thin film device (140) can be transferred to the secondary destination-of-transfer part (200) while maintaining layering relationship with respect to the substrate (100).

A resin material having a small relative dielectric constant is used as a layer insulation film 114. The resin material has a flat surface. A black matrix or masking film for thin film transistors is formed thereon using a metal material. Such a configuration prevents the problem of a capacity generated between the masking film and a thin film transistor.

A method of controlling an array of pixels in an active matrix display to a predetermined emission level is provided. The pixels are arranged in a plurality of rows and a plurality of columns, each pixel having an active matrix element. The method makes use of a plurality of sensors each having a measurable sensor parameter and at least one pixel driver. Light emission is varied from a plurality of pixels in a first row using the pixel driver and the active matrix elements in the pixels. Light emission is received from the pixels at the sensors and a measured value of the measurable sensor parameter is obtained responsive to the received light emission. For each of the plurality of pixels, a control signal is generated for the pixel to maintain constant emission from the light source at the predetermined emission level.

A pixel circuit having a function of compensating for characteristic variation of an electro-optical element and threshold voltage variation of a transistor is formed from a reduced number of component elements. The pixel circuit includes an electro-optical element, a holding capacitor, a sampling transistor, a drive transistor, a switching transistor, and first and second detection transistors. The sampling transistor samples and supplies an input signal from a signal line so as to be held into the holding capacitor. The driving transistor drives the electro-optical element with current in response to the held signal potential. The first and second detection transistors supply a threshold voltage of the drive transistor into the holding capacitor in order to cancel an influence of the threshold voltage in advance.

An active matrix light emitting device which is capable of clear color display of multiple gray scales is provided. The light emitting device has a pixel portion, and the pixel portion has a plurality of pixels. Each of the plurality of pixels has an EL element, a first EL driver TFT, a second EL driver TFT, a switching TFT, and an erasure TFT. The first EL driver TFT and the second EL driver TFT are connected in parallel.

Disclosed is a semiconductor thin film which can be formed at a relatively low temperature even on a flexible resin substrate. Since the semiconductor thin film is stable to visible light and has high device characteristics such as transistor characteristics, in the case where the semiconductor thin film is used as a switching device for driving a display, even when overlapped with a pixel part, the luminance of a display panel does not deteriorate. Specifically, a transparent semiconductor thin film 40 is produced by forming an amorphous film containing zinc oxide and indium oxide and then oxidizing the film so that the resulting film has a carrier density of 10+17 cm−3 or less, a Hall mobility of 2 cm2 / V·sec or higher, and an energy band gap of 2.4 EV or more.

An active matrix display includes a substrate, a video signal line on the substrate, first and second power lines on the substrate, a self-emitting element having two display electrodes facing each other and connected to one of the first and second power lines, a drive transistor connected between the first power line and one of the display electrodes, a storage capacitor having a first electrode connected to a gate electrode of the drive transistor and a second electrode facing the first electrode with interposing an insulating layer, the storage capacitor and the gate electrode of the drive transistor being arranged under the display electrode, and a shield electrode arranged between the display electrode connected to the drive transistor and at least one of the first electrode of the storage capacitor and the gate electrode with interposing an insulating layer, and set at a constant potential.

An active matrix display includes a plurality of pixels arranged in an array, a first transistor and a second transistor associated with each pixel, the first and second transistors positioned within the array for controlling current flow through each pixel, a light emitting diode associated with each pixel; and a storage capacitor associated with each pixel, wherein, during a time period for establishment of a threshold voltage on the storage capacitor for the first transistor, a voltage equal to the sum of the threshold voltage and a voltage for compensating for turnoff of the second transistor is established on the storage capacitor.

A method of improving the stability of organic light emitting diode (OLED) display devices driven by amorphous silicon thin-film transistors, in which the driving circuitry within each sub-pixel includes a driving transistor for driving organic light emitting diode (OLED), a scanning transistor and a storage capacitance. An end of the capacitance is connected to the signal resetting line, which a resetting time pulse of high potential and low potential are supplied. Since the resetting signals within the sub-pixels are synchronized, a single voltage of the resetting signal can control the positive and negative stresses for each transistor in the sub-pixels on the panel.