649 results about "High potential" patented technology

The invention relates to the technical field of lithium ion batteries, and provides a lithium cobalt oxide composite material which comprises a core body and a coating layer coating the core body, the core body comprises O2-phase lithium cobalt oxide, and the O2-phase lithium cobalt oxide is doped with an element M; the coating layer comprises an oxide containing an N element; the M element comprises at least one of Al, Mg, W, Ti, La, Zr, Ni, Mn and Y; n comprises at least one of Al, Mg, Y, W, Nb, La, Zr, Ti and P. The lithium cobalt oxide composite material provided by the invention is used as a positive electrode material of a lithium ion battery, and the cycling stability of the lithium ion battery under high potential is improved.

To reduce thrust required to convey a charged electrical charge carrier by reducing receding electrostatic force acting in the direction pushing back the electrical charge carrier when the electrical charge carrier is conveyed from a low-potential charging source to a high-potential recovery source, and to keep the potential of the electrical charge carrier low during conveyance.SOLUTION: A potential control layer 73 is provided near a charge retention layer 71 of an electrical charge carrier and the potential is set between that of a charge source and the charge retention layer, thereby reducing the electrostatic force applied to the electrical charge carrier and lowering the potential.SELECTED DRAWING: Figure 6

The invention discloses a gate drive circuit and a display panel, and the gate drive circuit is controlled by one of a fourth node, the output end of a second output module or the first node of a next-stage shift register. The voltage regulation module can stabilize or reduce the grid potential of the second transistor through the low voltage signal, and then the potential of the second grid driving signal can be maintained at the high potential or the pulse amplitude.

To provide cathode mixture that can restrain an increase in resistance that accompanies an increase in the potential of a cathode active material layer.SOLUTION: A cathode mixture includes a cathode active material, a first solid electrolyte, a first conductive material that is a particulate carbon material, and a second conductive material that is a fibrous carbon material. The D / G ratio of the first conductive material is 1.0 or less, the D / G ratio of the second conductive material is 0.5 or less, and the proportion of the first conductive material relative to the total of the first and second conductive materials is 5 mass% or more and 30 mass% or less.SELECTED DRAWING: Figure 1

The invention relates to the technical field of fuel cell control, and discloses a control method of a hydrogen fuel system controller, which comprises the following steps: in response to a system shutdown instruction, controlling a DC / DC converter to maintain operation and request a preset scavenging current, and consuming residual reaction gas in a flow channel and a pipeline by using an electrochemical power generation reaction in an electric pile; meanwhile, hydrogen-cut air-down operation is executed, and the average single voltage of the electric pile is collected in real time; when it is monitored that the average monomer voltage is reduced to be below a preset anti-corrosion safety threshold value, the DC / DC converter is controlled to be disconnected, and mechanical purging is started. A time sequence interlocking mechanism of electrochemical energy depletion and mechanical purging is established, a high-potential retention path in the shutdown process is blocked from the physical and chemical source, and the safety of the shutdown is improved. Reverse polarity corrosion caused by a hydrogen-air interface effect is avoided, and the service life of the galvanic pile is prolonged.

The invention discloses an ocean three-dimensional space high-potential area identification layout method based on suitability evaluation, and relates to the technical field of ocean space planning management, and the method comprises the steps: collecting sea area natural, social and ecological data and historical three-dimensional right confirmation project cases, carrying out the preprocessing, and constructing a sea area three-dimensional space basic database; analyzing a historical three-dimensional right confirmation case based on a graph neural network, and constructing a sea activity-space layer relation graph; and analyzing the compatibility of different sea-using activity combinations in historical projects by using the sea-using activity-spatial layer relation graph. According to the method, a multi-dimensional suitability evaluation system and a compatibility probability matrix are constructed, a high-potential area meeting natural conditions, ecological constraints and social requirements at the same time can be recognized, plane conflicts of traditional two-dimensional planning are avoided through layered weighted stacking analysis, vertical space resource allocation is optimized through a three-dimensional layered utilization rule, and the compatibility of the high-potential area is improved. Therefore, the same sea area can be compatible with various sea-using activities, and low-efficiency or conflicting layout is reduced.

The invention provides a gate drive circuit and a display panel, the gate drive circuit comprises a plurality of cascaded gate drive units, and each gate drive unit comprises a pull-down maintenance module electrically connected with a first node and used for receiving a first low level signal, a second low level signal, a first control signal and a second control signal, the pull-down maintaining module is used for maintaining the low potential of a first node according to the first low level signal and the second low level signal, and comprises a first phase inverter which is connected with a first control signal and is provided with a first inverted output end; the second inverter is connected with a second control signal and is provided with a second inverted output end; and the voltage stabilization submodule is used for maintaining the low potential of the second inverted output end according to the high potential of the first control signal and maintaining the low potential of the first inverted output end according to the high potential of the second control signal. According to the scheme, the stability of signal output of the gate drive circuit is improved.

The invention discloses a gate driving circuit and a display panel, and the gate driving circuit comprises a plurality of cascaded gate driving units, and each gate driving unit at least comprises a cascaded driving unit which is connected with the gate driving unit of the previous stage; the first output unit is connected with the cascade driving unit and is used for outputting a first pulse signal; wherein the first pulse signal is a normal-state high-potential low-potential pulse signal; the second output unit is connected with the cascade driving unit and is used for outputting a second pulse signal; wherein the second pulse signal is a normal low-potential high-potential pulse signal. Through the circuit, output of different scanning signals is realized.

The semiconductor device (1010) comprises a signal transmission element provided on an element structure (21) in a high-withstand voltage isolation region (3). The signal transmission element includes a primary coil (18) provided on one side of a low-potential region (1) of the high-withstand voltage isolation region (3) and connected to the low-potential region (1), and a secondary coil (19) provided on one side of a high-potential region (2) of the high-withstand voltage isolation region (3) and connected to the high-potential region (2). The primary coil (18) and the secondary coil (19) are magnetically coupled to each other by a magnetic field in a direction parallel to a main surface of a P-type substrate (4).

An emission driver is disclosed. The emission driver includes a Q node controller configured to control a voltage at a Q node by applying a start signal, a carry signal, or a high-potential driving voltage to the Q node responsive to a first clock signal, a QB node controller configured to control a voltage at a QB node by applying the high-potential driving voltage or a low-potential driving voltage to the QB node responsive to the first clock signal, an output buffer configured to output the high-potential driving voltage or the low-potential driving voltage to the corresponding emission line responsive to the voltages at the Q node and the QB node, and a pump controller configured to change the voltage at the Q node according to a second clock signal while the emission signal is output at a turn-on level responsive to the start signal or the carry signal.

The invention discloses a diamond microstructure precision grinding system and method with visual positioning, and the method comprises the following steps: collecting a microscopic visual image, calibrating a visual coordinate system and a machine tool coordinate system, and building a unified positioning coordinate system; extracting composite visual features, constructing an energy field, performing adaptive partitioning, and generating risk partitioning codes; the risk partition codes are input into a double-flow network, grinding signals are input into grinding branches, and parameter tracks are generated; precisely grinding according to a segmented parameter track, reducing the cutting depth and the speed in a high potential energy area, and increasing the speed in a low potential energy area; after grinding, obtaining a three-dimensional shape, performing error analysis and energy spectrum generation, and mapping to risk partition coding; and according to the error energy and the energy field, the grinding priority is judged, and high-priority partitions are selectively ground and remeasured. According to the method, the visual potential energy field is constructed and the improved double-flow neural network is fused, so that accurate positioning, self-adaptive grinding control and high-precision micro-area grinding of the diamond microstructure are realized.

Embodiments of the present application provide a display panel and a display device. The display panel comprises a shift register, the shift register comprising a plurality of shift register units; the shift register unit comprising an input module, an output module and a voltage stabilizing module; the input module is configured to write voltages to a first node and a second node based on at least an input signal and a first clock signal; the output module is connected to the first node and the second node respectively; the output module is configured to output a high level signal based on the voltage of the first node, and is also configured to output a low level signal based on the voltage of the second node; the voltage stabilizing module is connected to the first node; during at least part of the period when the first node is at a high potential, the voltage stabilizing module is configured to pull up the potential of the first node based on the voltage of the first node and a first voltage signal. The present application can ensure that the shift register unit stably outputs a high level enable signal, thereby improving the product performance reliability.

The semiconductor device includes a signal transmission element provided on an element structure in a high-withstand-voltage isolation region. The signal transmission element includes a primary coil that is provided on a side of a low potential region of the high-withstand-voltage isolation region and connected to the low potential region, and a secondary coil that is provided on a side of a high potential region of the high-withstand-voltage isolation region and connected to the high potential region. The primary coil and the secondary coil are magnetically coupled to each other by a magnetic field in a direction parallel to a main surface of a P type substrate.

The invention discloses a high-potential-corrosion-resistant composite coating as well as a preparation method and application thereof. The high-potential-corrosion-resistant composite coating comprises a metal transition layer, a graphite-like amorphous carbon layer and a SnO2 hole sealing layer which are sequentially formed on the surface of the metal bipolar plate serving as a substrate, wherein the SnO2 hole sealing layer is prepared in an atomic layer deposition mode. According to the high-potential-corrosion-resistant composite coating provided by the invention, the SnO2 layer is deposited on the surface of the amorphous carbon coating, so that the effect of closing amorphous carbon defects is achieved, and the high-potential-corrosion-resistant composite coating has excellent corrosion-resistant protection performance under 1.6 V high-potential corrosion.

A gate structure is formed on a substrate at the junction of a well region and a drift region, the gate structure on the drift region is doped to form a first doped region and a second doped region which are adjacent to each other, the first doped region is doped with first type ions, and the second doped region is doped with second type ions; the conduction types of the second type ions and the first type ions are different, so that the first doped region and the second doped region form a reverse biased PN junction, an electric field caused by the interconnection structure can be balanced and dispersed in the direction from the drain electrode to the source electrode, and the high voltage of the interconnection structure can be effectively isolated; besides, the first doped region and the second doped region form a reverse-biased PN junction to disperse the high potential difference between the first doped region and the second doped region, so that the electric field intensity and the potential peak value on the surface of the device are effectively reduced, the segmented voltage division effect is beneficial to optimization of electric field distribution on the surface of the device, electric field concentration is reduced, and the performance of the device is improved. Therefore, the breakdown voltage of the semiconductor structure is improved.

A display panel having a display area where a plurality of subpixels are disposed, a gate driving circuit disposed in a non-display area outside the display area to supply a plurality of scan signals to the plurality of subpixels, a plurality of gate high-potential voltage lines which are disposed in a side of the gate driving circuit for transferring a plurality of gate high-potential voltages, a plurality of gate low-potential voltage lines which are disposed in other side of the gate driving circuit for transferring a plurality of gate low-potential voltages, and a plurality of gate low-potential voltage connection lines which are extended through a central area of the gate driving circuit for transferring the plurality of gate low-potential voltages to the gate driving circuit.

A semiconductor device includes first and second N-type semiconductor regions provided selectively in an upper layer part of an N-type high-breakdown voltage isolation region, and a P-type semiconductor region provided selectively in the upper layer part of the N-type high-breakdown voltage isolation region and to be supplied with a first power supply voltage lower than a second power supply voltage. The second N-type semiconductor region is arranged closer to an N-type high-potential region than the first N-type semiconductor region and the P-type semiconductor region. The P-type semiconductor region is arranged between the first N-type semiconductor region and the second N-type high-potential region in a plan view. A diode has an anode to be supplied with the second power supply voltage, and a cathode electrically connected to the first N-type semiconductor region. The second N-type semiconductor region is electrically connected to the N-type high-potential region.

A power converter includes a high-potential electrical path (22H), a low-potential electrical path (22L), an inverter (20), a motor (10), an inter-storage switch (40), a bypass switch (50, 51), and a motor-side electrical path (25-28). The inverter has an upper-arm switch (SWH) and a lower-arm switch (SWL). The motor has an armature winding (11) electrically connected to a connection point between the upper-arm and the lower-arm switches via a conductive member (23). The inter-storage switch is located at an inter-storage electrical path (24) that electrically connects a negative terminal of a first power storage unit (31) to a negative terminal of a second power storage unit (32). The bypass switch establishes at least one of an electrical connection between the negative terminals of the first and second power storage units or the positive terminals of the first and second power storage units. The motor-side electrical path electrically connects the inter-storage electrical path to either the armature winding or the conductive member.

The invention discloses an open circuit purging method and device of a fuel cell system and a storage medium, the fuel cell system comprises an electric pile and a DC-DC module which are connected with each other, the method comprises the following steps: under the condition that the fuel cell system is shut down, according to an under-voltage protection voltage of the electric pile, a first target value of a low side current is determined, the low-side current is the current output to the DC-DC module by the electric pile, and the first target value is greater than 0A; blowing the electric pile according to the first target value, and obtaining the current voltage of the electric pile; under the condition that the current voltage is discharged to the under-voltage protection voltage, the DC-DC module is controlled to discharge the current voltage to the safety voltage of the galvanic pile, a second target value of the low-side current is determined, and the second target value is 0A; and purging the galvanic pile according to the second target value. According to the technical scheme, the voltage of the electric pile can be prevented from being continuously in a high-potential state during open-circuit purging of the fuel cell system, and the fault rate of the fuel cell system is reduced.

The present disclosure describes various embodiments of a display device. In one embodiment, a display device includes a display panel, a light emitting diode which is disposed in the display panel. The light emitting diode is configured to be controlled in response to an emission period and a non-emission period. The display device includes a driving transistor coupled to the light emitting diode. The display device includes an emission control circuit which is coupled between the light emitting diode and a high potential power line and between the light emitting diode and a low potential power line, in which the emission control circuit is configured to couple the light emitting diode to any one of the high potential power line and the low potential power line in response to each of the emission period and the non-emission period.

The invention provides a negative plate of a solid-state battery. The negative plate comprises a current collector, a lithium-loving coating compounded on the current collector and a conductive layer compounded on the lithium-loving coating, the lithium-loving coating contains a lithium-loving element; the lithium-loving element comprises one or more of Mg, Pt, Sn, Ag, Al and Zn; and the conductive layer comprises a carbon material. By introducing the lithium-loving element and the high-potential material and utilizing a synergistic mechanism of the lithium-loving element and the high-potential material, the electrochemical window is further widened and the metal lithium deposition risk is reduced while the lithium deposition uniformity is improved. According to the negative electrode plate provided by the invention, the nucleation potential of the lithium-metal negative electrode plate and the resistance of the conductive material are controlled within a specific range, so that nucleation of lithium ions on the surface of the negative electrode current collector can be facilitated, meanwhile, the nucleation uniformity of the lithium ions on the surface of the negative electrode current collector can be improved, and the cycle life of the battery is further prolonged.

To provide a wireless power supply system in which overvoltage protection can be realized at the power reception side without adopting a special circuitry configuration.SOLUTION: A power reception device 3 includes a rectifier 32 that converts received AC voltage to DC voltage and outputs the DC voltage to between a high-potential side line 41 and a low-potential side line 42, an input capacitor C1 that smooths the output of the rectifier 32, a DCDC converter 5 that receives the DC voltage smoothed by the input capacitor C1 as input voltage Vin, converts the input voltage Vin to desired output voltage Vout by controlling the on / off of at least two switching elements SW1, SW2, and outputs the output voltage to a load, and an overvoltage detection unit 51 that detects overvoltage of the input voltage Vin. When the overvoltage detection unit 51 detects overvoltage, the DCDC converter 5 executes overvoltage protection operation of forming a current path to allow protection current Ipro to flow therethrough between the high-potential side line 41 and the low-potential side line 42 by controlling the switching elements SW1, SW2 to be on.SELECTED DRAWING: Figure 1

The invention discloses a shutdown strategy method and system for a fuel cell stack and a cell, and the method comprises the following steps: (1) reducing the current density of the stack to a limited state before shutdown, and adjusting the operation condition of the stack to be matched with the current density; (2) after the average voltage of the galvanic pile monomers is stable, reducing the current density of the galvanic pile to 0.02 A / cm < 2 >, and switching cathode gas into dry nitrogen in the same flow state on the premise of keeping other operation conditions unchanged; (3) continuously monitoring the voltage of each monomer in the galvanic pile, and reducing the current density of the galvanic pile to 0.01 A / cm < 2 > when the voltage of one monomer is smaller than a first limited voltage; and (4) when the voltage of one monomer is smaller than the second limited voltage, reducing the current density of the galvanic pile to 0A / cm < 2 >, and shutting down the galvanic pile. By optimizing the shutdown strategy, the adverse effect of high potential on the membrane electrode is effectively avoided, and the service life of the membrane electrode is prolonged.

A gate drive circuit and a display panel. In the gate drive circuit, under the control of one of a fourth node (P), an output end of a second output module (70), or a first node of a next-stage shift register, a voltage regulation module (71) can stabilize or reduce the gate potential of a second transistor (T10) by means of a low voltage signal, thus keeping the potential of a second gate drive signal (Nout[N]) at a high potential or pulse amplitude.

To provide a power conversion device and a program that can eliminate a situation where an overcurrent flows in the power conversion device.SOLUTION: The power conversion device includes a motor 10, an inverter 20, a high-potential side path 22H, a low-potential side path 22L, an inter-battery switch 50, a bypass switch 60, a connection path 73, and a motor ECU 100. The motor ECU 100 performs a switching control on a target switch, which is at least one of upper and lower arm switches (SUH to SWL) on the inverter 20 to allow current to flow through the connection path 73. The motor ECU 100 determines whether a short-circuit fault has occurred in at least one of the upper and lower arm switches, and when a short circuit fault is determined to have occurred, a current reduction process is performed to reduce a current flowing in the connection path 73.SELECTED DRAWING: Figure 1

Systems and techniques may generally be used for delivering pulsed electrostatic fields for therapeutic purposes. In one aspect, an electrostatic-field therapy apparatus may include a power source; a pulse-rate generator that may produce gating pulses; a solid-state switching stage with at least one transistor whose control terminal receives the gating pulses and whose conduction path periodically switches current from the power source; a step-up transformer whose primary winding couples to the switching stage and whose secondary winding may output high-potential pulses; an electrode coupled to the secondary winding; and a dielectric layer disposed over the electrode so that, when a body region is placed adjacent the dielectric layer, the high-potential pulses may be capacitively transferred through the dielectric as a therapeutic electrostatic field.

A piezoelectric element includes: a first electrode; an oxide layer formed on the first electrode; a piezoelectric layer formed on the oxide layer and containing potassium, sodium, and niobium; and a second electrode formed on the piezoelectric layer. When a potential difference of 10 V is applied between the first electrode and the second electrode, a current density of a leak current differs by 10,000 times or more between a case in which the first electrode is set at a high potential and a case in which the second electrode is set at a high potential.

The invention provides an electrochemical device and a power utilization device, and belongs to the technical field of secondary batteries, the electrochemical device comprises a positive pole piece, the positive pole piece comprises a positive current collector and a positive active material layer arranged on the positive current collector, and the positive active material layer comprises a positive material; a positive electrode material comprises lithium manganese iron phosphate and nickel cobalt lithium manganate, and the positive electrode material meets the relation of a formula I: # imgabs0 #. According to the electrochemical device, the lithium manganese iron phosphate and the nickel cobalt lithium manganate are introduced into the positive electrode material at the same time, and by adjusting the particle size, the mixing proportion and the discharge capacity under high potential of the lithium manganese iron phosphate and the nickel cobalt lithium manganate, the electrochemical performance of the device is improved; therefore, the nickel cobalt lithium manganate material can share the charge and discharge current in the electric quantity interval corresponding to the Mn charge and discharge voltage platform in the lithium manganese iron phosphate, and the cycle performance of the electrochemical device is effectively optimized.

A pixel circuit and a display device including the same are disclosed. The pixel circuit includes: a driving transistor which includes a first electrode connected to a first node, a gate electrode connected to a second node, and a second electrode connected to a third node, and supplies a driving current to a light emitting device; a first transistor that is electrically connected between the first node and the second node; a second transistor that is electrically connected between the first node and a data voltage; a third transistor that is electrically connected between the first node and a power supply line that supplies a high potential voltage; and a storage capacitor that includes a first electrode connected to the high potential voltage and a second electrode connected to the second node.

The present invention relates to a metal bipolar plate coating resistant to high potential corrosion and a preparation method thereof. The prepared carbon film includes a first carbon layer located inside and a second carbon layer located on the surface. Among them: the first carbon layer uses an arc bend tube magnetic filter coil to emit carbon cations, and the carbon cations are accelerated with a DC bias under preset conditions to strengthen the role of chemical bonds in interface bonding. Ti metal and carbon cations are synthesized into TiC. At the same time, by adjusting the current density applied to the metal bipolar plate, excessive graphitization transformation of the first carbon layer is avoided, so that the TiC phase and sp3 phase at the interface are significantly more than the sp2 phase, thereby improving the high potential corrosion resistance of the first carbon layer and the Ti-C interface. The second carbon layer is a conductive layer, and a low duty cycle and a high pulse bias are used to achieve a low resistance effect. Finally, a metal bipolar plate carbon-based coating that can withstand long-term high potential corrosion and has excellent contact resistance characteristics is obtained.