370 results about "High potential" patented technology

The invention relates to the technical field of fuel cell control, and discloses a control method of a hydrogen fuel system controller, which comprises the following steps: in response to a system shutdown instruction, controlling a DC / DC converter to maintain operation and request a preset scavenging current, and consuming residual reaction gas in a flow channel and a pipeline by using an electrochemical power generation reaction in an electric pile; meanwhile, hydrogen-cut air-down operation is executed, and the average single voltage of the electric pile is collected in real time; when it is monitored that the average monomer voltage is reduced to be below a preset anti-corrosion safety threshold value, the DC / DC converter is controlled to be disconnected, and mechanical purging is started. A time sequence interlocking mechanism of electrochemical energy depletion and mechanical purging is established, a high-potential retention path in the shutdown process is blocked from the physical and chemical source, and the safety of the shutdown is improved. Reverse polarity corrosion caused by a hydrogen-air interface effect is avoided, and the service life of the galvanic pile is prolonged.

An emission driver is disclosed. The emission driver includes a Q node controller configured to control a voltage at a Q node by applying a start signal, a carry signal, or a high-potential driving voltage to the Q node responsive to a first clock signal, a QB node controller configured to control a voltage at a QB node by applying the high-potential driving voltage or a low-potential driving voltage to the QB node responsive to the first clock signal, an output buffer configured to output the high-potential driving voltage or the low-potential driving voltage to the corresponding emission line responsive to the voltages at the Q node and the QB node, and a pump controller configured to change the voltage at the Q node according to a second clock signal while the emission signal is output at a turn-on level responsive to the start signal or the carry signal.

The invention discloses a diamond microstructure precision grinding system and method with visual positioning, and the method comprises the following steps: collecting a microscopic visual image, calibrating a visual coordinate system and a machine tool coordinate system, and building a unified positioning coordinate system; extracting composite visual features, constructing an energy field, performing adaptive partitioning, and generating risk partitioning codes; the risk partition codes are input into a double-flow network, grinding signals are input into grinding branches, and parameter tracks are generated; precisely grinding according to a segmented parameter track, reducing the cutting depth and the speed in a high potential energy area, and increasing the speed in a low potential energy area; after grinding, obtaining a three-dimensional shape, performing error analysis and energy spectrum generation, and mapping to risk partition coding; and according to the error energy and the energy field, the grinding priority is judged, and high-priority partitions are selectively ground and remeasured. According to the method, the visual potential energy field is constructed and the improved double-flow neural network is fused, so that accurate positioning, self-adaptive grinding control and high-precision micro-area grinding of the diamond microstructure are realized.

Embodiments of the present application provide a display panel and a display device. The display panel comprises a shift register, the shift register comprising a plurality of shift register units; the shift register unit comprising an input module, an output module and a voltage stabilizing module; the input module is configured to write voltages to a first node and a second node based on at least an input signal and a first clock signal; the output module is connected to the first node and the second node respectively; the output module is configured to output a high level signal based on the voltage of the first node, and is also configured to output a low level signal based on the voltage of the second node; the voltage stabilizing module is connected to the first node; during at least part of the period when the first node is at a high potential, the voltage stabilizing module is configured to pull up the potential of the first node based on the voltage of the first node and a first voltage signal. The present application can ensure that the shift register unit stably outputs a high level enable signal, thereby improving the product performance reliability.

The invention discloses a high-potential-corrosion-resistant composite coating as well as a preparation method and application thereof. The high-potential-corrosion-resistant composite coating comprises a metal transition layer, a graphite-like amorphous carbon layer and a SnO2 hole sealing layer which are sequentially formed on the surface of the metal bipolar plate serving as a substrate, wherein the SnO2 hole sealing layer is prepared in an atomic layer deposition mode. According to the high-potential-corrosion-resistant composite coating provided by the invention, the SnO2 layer is deposited on the surface of the amorphous carbon coating, so that the effect of closing amorphous carbon defects is achieved, and the high-potential-corrosion-resistant composite coating has excellent corrosion-resistant protection performance under 1.6 V high-potential corrosion.

A gate structure is formed on a substrate at the junction of a well region and a drift region, the gate structure on the drift region is doped to form a first doped region and a second doped region which are adjacent to each other, the first doped region is doped with first type ions, and the second doped region is doped with second type ions; the conduction types of the second type ions and the first type ions are different, so that the first doped region and the second doped region form a reverse biased PN junction, an electric field caused by the interconnection structure can be balanced and dispersed in the direction from the drain electrode to the source electrode, and the high voltage of the interconnection structure can be effectively isolated; besides, the first doped region and the second doped region form a reverse-biased PN junction to disperse the high potential difference between the first doped region and the second doped region, so that the electric field intensity and the potential peak value on the surface of the device are effectively reduced, the segmented voltage division effect is beneficial to optimization of electric field distribution on the surface of the device, electric field concentration is reduced, and the performance of the device is improved. Therefore, the breakdown voltage of the semiconductor structure is improved.

A display panel having a display area where a plurality of subpixels are disposed, a gate driving circuit disposed in a non-display area outside the display area to supply a plurality of scan signals to the plurality of subpixels, a plurality of gate high-potential voltage lines which are disposed in a side of the gate driving circuit for transferring a plurality of gate high-potential voltages, a plurality of gate low-potential voltage lines which are disposed in other side of the gate driving circuit for transferring a plurality of gate low-potential voltages, and a plurality of gate low-potential voltage connection lines which are extended through a central area of the gate driving circuit for transferring the plurality of gate low-potential voltages to the gate driving circuit.

A semiconductor device includes first and second N-type semiconductor regions provided selectively in an upper layer part of an N-type high-breakdown voltage isolation region, and a P-type semiconductor region provided selectively in the upper layer part of the N-type high-breakdown voltage isolation region and to be supplied with a first power supply voltage lower than a second power supply voltage. The second N-type semiconductor region is arranged closer to an N-type high-potential region than the first N-type semiconductor region and the P-type semiconductor region. The P-type semiconductor region is arranged between the first N-type semiconductor region and the second N-type high-potential region in a plan view. A diode has an anode to be supplied with the second power supply voltage, and a cathode electrically connected to the first N-type semiconductor region. The second N-type semiconductor region is electrically connected to the N-type high-potential region.

The invention provides a negative plate of a solid-state battery. The negative plate comprises a current collector, a lithium-loving coating compounded on the current collector and a conductive layer compounded on the lithium-loving coating, the lithium-loving coating contains a lithium-loving element; the lithium-loving element comprises one or more of Mg, Pt, Sn, Ag, Al and Zn; and the conductive layer comprises a carbon material. By introducing the lithium-loving element and the high-potential material and utilizing a synergistic mechanism of the lithium-loving element and the high-potential material, the electrochemical window is further widened and the metal lithium deposition risk is reduced while the lithium deposition uniformity is improved. According to the negative electrode plate provided by the invention, the nucleation potential of the lithium-metal negative electrode plate and the resistance of the conductive material are controlled within a specific range, so that nucleation of lithium ions on the surface of the negative electrode current collector can be facilitated, meanwhile, the nucleation uniformity of the lithium ions on the surface of the negative electrode current collector can be improved, and the cycle life of the battery is further prolonged.

To provide a wireless power supply system in which overvoltage protection can be realized at the power reception side without adopting a special circuitry configuration.SOLUTION: A power reception device 3 includes a rectifier 32 that converts received AC voltage to DC voltage and outputs the DC voltage to between a high-potential side line 41 and a low-potential side line 42, an input capacitor C1 that smooths the output of the rectifier 32, a DCDC converter 5 that receives the DC voltage smoothed by the input capacitor C1 as input voltage Vin, converts the input voltage Vin to desired output voltage Vout by controlling the on / off of at least two switching elements SW1, SW2, and outputs the output voltage to a load, and an overvoltage detection unit 51 that detects overvoltage of the input voltage Vin. When the overvoltage detection unit 51 detects overvoltage, the DCDC converter 5 executes overvoltage protection operation of forming a current path to allow protection current Ipro to flow therethrough between the high-potential side line 41 and the low-potential side line 42 by controlling the switching elements SW1, SW2 to be on.SELECTED DRAWING: Figure 1

Systems and techniques may generally be used for delivering pulsed electrostatic fields for therapeutic purposes. In one aspect, an electrostatic-field therapy apparatus may include a power source; a pulse-rate generator that may produce gating pulses; a solid-state switching stage with at least one transistor whose control terminal receives the gating pulses and whose conduction path periodically switches current from the power source; a step-up transformer whose primary winding couples to the switching stage and whose secondary winding may output high-potential pulses; an electrode coupled to the secondary winding; and a dielectric layer disposed over the electrode so that, when a body region is placed adjacent the dielectric layer, the high-potential pulses may be capacitively transferred through the dielectric as a therapeutic electrostatic field.

The invention discloses a light-emitting diode chip for improving the polarization effect of a quantum well light-emitting layer and a preparation method of the light-emitting diode chip. Comprising a sapphire patterned substrate, a buffer layer, a defect barrier layer, an N-type gallium nitride layer, a current expansion layer, a stress release layer, a quantum well light-emitting layer, a polarization buffer layer, a P-type electron barrier layer, a P-type gallium nitride layer, a transparent conductive layer, an electrode layer and a protective layer which are sequentially arranged from bottom to top. The polarization buffer layer is arranged between the quantum well light-emitting layer and the P-type electron blocking layer, buffers energy level abrupt change, and improves the polarization effect. A composite structure of an In < x > Ga < 1-x > N / GaN superlattice and a GaN / Al < y > Ga < 1-y > N superlattice is inserted between the multi-quantum well layer and the electron blocking layer, mutation of energy level is buffered by adjusting gradient doping of In and Al, the polarization effect in quantum wells caused by high potential barriers of the electron blocking layer is effectively improved, and the luminous efficiency of the diode is further improved.

Each of the power conversion devices of a parallel power supply device includes an individual output voltage sensor detecting an individual output voltage value, a current sensor that detects a control current value, and a control device. A system to which the parallel power supply device is applied includes a common output voltage sensor detecting a common output voltage value that is a voltage value between high- and low-potential output paths. The parallel power supply device is configured so that the detected common output voltage value, an output voltage command value common for each of the power conversion devices, and an output power command value common for each of the power conversion devices are inputted into the control device. The control device performs a switching control based on the inputted output voltage command value, individual output voltage value, control current value, output power command value, and common output voltage value.

The invention discloses an enzyme activity optimization and dynamic screening method based on collaboration of multiple computing servers, belongs to the field of computational biology and enzyme engineering, and realizes collaborative design of multiple platforms by integrating technical advantages of online and local computing servers such as FireProt 2.0, PROSS, Rosetta and FoldX 4.0. Mutation design is carried out from multiple dimensions of structure prediction, evolution conservative property, energy calculation and the like, and a potential mutant library is constructed; a multi-condition screening strategy is used, and a mutant with high potential is screened out through visual inspection, conservative analysis and multi-method cross validation, so that invalid design is avoided; molecular dynamics simulation and MM / GBSA binding free energy decomposition are further combined for dynamic binding analysis, the influence of mutation on the substrate binding strength is quantified, and the stability and reliability of mutation effect prediction are remarkably improved.

A multiphase LLC resonant converter of N phases (N represents an integer equal to or more than two) causes N resonant converters connected in parallel to a direct current power supply to operate with a phase difference of 360° / N. One of the resonant converters includes a lower adjustment inductor connected in parallel with primary windings of the lower conversion circuits. The one of the resonant converters includes an upper adjustment inductor connected in parallel with primary windings of upper conversion circuits. Outputs including high potential output terminals and low potential output terminals of the lower conversion circuits and the upper conversion circuits star connected at neutral points via a second resonant capacitor are connected.

The invention discloses a GOA circuit and a driving method thereof, a display panel and a display device, and relates to the technical field of display, the circuit comprises a cascade transmission module integrated with a cascade transmission transistor, the drain electrode of the cascade transmission transistor is electrically connected with a first node, and the source electrode of the cascade transmission transistor is electrically connected with a second node; the grid control end of the output module is electrically connected with the second node; the transmission ends on the two sides of the potential control module are electrically connected with the first node and the low-potential line respectively, and the high-potential end of the potential control module is electrically connected with the high-potential line. The potential control module is used for transmitting a high-potential signal of a high-potential line to the first node in a cascade transmission stage, so that the cascade transmission transistor transmits the high-potential signal to the output module through the second node; and transmitting a low-potential signal of the low-potential line to the first node after the cascade transmission is completed, so that the potential of a second node electrically connected with the source electrode of the cascade transmission transistor is continuously lowered, and the display quality is improved by eliminating threshold voltage drift caused by voltage imbalance of the cascade transmission transistor.

Provided is a novel drive circuit. A level shift circuit has first to third transistors, first to third power supply lines, and first to fourth wiring lines. A back gate of the first transistor is electrically connected with the first wiring line. One of a source and a drain of the first transistor is electrically connected with the first power supply line. The potential of the first power supply line is higher than the potential of the second power supply line, the potential of the third power supply line is lower than the potential of the first power supply line and the potential of the second power supply line, the signal of the fourth wiring line switches from a low potential level to a high potential level when the signal supplied to the first wiring line is at a high potential level, and the signal of the fourth wiring line switches from the high potential level to the low potential level when the signal supplied to the first wiring line is at a low potential level.

The present invention provides a semiconductor device that can prevent sudden malfunctions even if a switching element fails, thereby improving reliability. [Solution] The semiconductor device comprises an upper arm 101 and a lower arm 102, each having a plurality of switching elements 10a to 10h. Multiple units (10a, 10b), (10c, 10d) are formed by connecting multiple switching elements 10a to 10d of the upper arm 101 in series between the high-potential terminal P and the neutral point 15 of the upper arm 101 and the lower arm 102, and these units are connected in parallel between the high-potential terminal P and the neutral point 15. Multiple units (10e, 10f), (10g, 10h) are formed by connecting multiple switching elements 10e to 10h of the lower arm 102 in series between the low-potential terminal N and the neutral point 15, and these units are connected in parallel between the low-potential terminal N and the neutral point 15.

A capacitor according to the present invention includes a dielectric film that has a first surface and a second surface that faces the opposite direction from the first surface, a high-potential-side first electrode that is provided on the first surface of the dielectric film, and a low-potential-side second electrode that is provided on the second surface of the dielectric film. The work function of the first electrode is greater than the work function of the second electrode.

Embodiments of the present disclosure relate to a display apparatus and a display driving method, and more particularly, a display apparatus can be provided, including a display panel in which a plurality of sub-pixels and a plurality of reference voltage lines are disposed, the plurality of sub-pixels including a light emitting element that emits light by a high potential voltage supplied to a driving voltage line, the plurality of reference voltage lines connected to the plurality of sub-pixels to detect a characteristic value; a data driving circuit configured to supply a low potential voltage to the driving voltage line through the plurality of reference voltage lines; a base voltage switching circuit configured to control a base voltage node connected to a cathode electrode of the light emitting element; a current detecting circuit configured to detect a current flowing between the base voltage node and a ground; and a timing controller configured to control the base voltage switching circuit and to generate a defect detection signal for the driving voltage line according to the current detected by the current detecting circuit.

The invention provides a system and a method for removing charges in liquid medicine, which are applied to the technical field of semiconductors. According to the invention, a small-flow liquid medicine circulation pipeline is additionally arranged on a machine table pipeline at the front end of the liquid medicine nozzle, and the liquid medicine circulation pipeline is grounded, so that as long as one path is grounded, charges in the liquid medicine in all branches can be conducted away along the path; therefore, charges in all the liquid medicine in the machine pipeline can be conducted away, the problem that when the liquid medicine nozzle sprays liquid medicine to the surface of a wafer, instantaneous high potential difference is generated, arc discharge defects are formed, and a circuit fails is solved, and the reliability, the electrical performance and the yield of products are improved. In addition, the method is simple and efficient, and is suitable for various liquid medicines, so that the method has relatively high mass production applicability.

The present application provides a display panel (100) and a display apparatus (200), wherein the display panel (100) includes a pixel circuit (P), the pixel circuit (P) includes an amplitude modulation subcircuit (P2) and a pulse width modulation subcircuit (P1), the display panel (100) also includes a substrate (10), a voltage division signal line (21), and a first constant voltage signal line (31), the voltage division signal line (21) is located at a side of the substrate (10), the voltage division signal line (21) extends along a first direction (X), the first constant voltage signal line (31) is located at the side of the substrate (10), the first constant voltage signal line (31) extends along a second direction (Y) and transmits a high potential voltage to the pulse width modulation subcircuit (P1), and the first direction (X) intersects with the second direction (Y), wherein a plurality of the first constant voltage signal lines (31) are electrically connected to a plurality of the voltage division signal lines (21). In an embodiments of the present application, by adding the voltage division signal line (21) in the display panel (100), and cross-connecting the voltage division signal line (21) with the first constant voltage signal line (31), a mesh structure for transmitting a first power supply voltage is formed, so as to improve the stability of the first power supply voltage, so that the light-emitting element (F) can be turned on and off accurately, thereby improving the display reliability of the display panel (100).

The invention discloses a molten salt electrolyte, a high-voltage thermal battery monomer and a preparation method. The molten salt electrolyte comprises a base electrolyte and at least one additive, wherein the basic electrolyte is prepared from LiF and Li2SO4; the additive is selected from any one or more than two of KF, NaF, CsF, KCl, NaCl, CsCl, Li2O, LiClO4, NaClO4, KClO4, CsClO4, K2SO4, Na2SO4, Cs2SO4, LiKSO4, LiNaSO4, LiCsSO4, K2CO3, Na2CO3, Cs2CO3, KPO3, NaPO3, CsPO3, Na3PO4, K3PO4 and Cs3PO4, and the additive is selected from any one or more than two of KF, NaF, CsF, KCl, NaCl, CsCl, Li2O, LiClO4, NaClO4, KClO4, CsClO4, K2SO4, Na2SO4, Cs2SO4, LiKSO4, LiNaSO4, LiCsSO4, K2CO3 The electrolyte is suitable for a high-voltage electrochemical system of a thermal battery, and has excellent high-temperature stability and compatibility with a high-potential positive electrode material.

A display device capable of reducing external light reflection by arranging signal lines supplying signals to sub-pixels on the same plane as the pixel electrode of the light-emitting device is described. The display includes signal lines—such as data lines, high-potential voltage lines, and reference voltage lines—formed in the same layer as the pixel electrode to minimize optical interference from stacked reflective materials. These lines are implemented as multi-layer structures comprising a transparent electrode material in a lower layer and a low-reflectance conductive material in an upper layer. A color filter is disposed below the pixel electrode and second signal lines to refract and reduce external light. Light-shielding lower patterns are arranged beneath gate lines and connection patterns. Transparent active layers of driving and sensing transistors serve as branch lines, enhancing optical performance and circuit compactness. This structure also improves process integration and manufacturing efficiency.

The application provides a hierarchical and orderly regulation method based on flexible load group schedulable potential evaluation, aiming at solving the problems of inaccurate model, single evaluation dimension, uneven resource allocation and poor response fairness in the coordinated scheduling of multiple types of flexible load. The hierarchical and orderly regulation method based on schedulable potential evaluation constructs an energy-power-time three-dimensional evaluation system to improve the comprehensive characterization of the regulation ability of flexible load; through clustering, hierarchical and dynamic rotation mechanism, the precise screening and fair calling of high potential load are realized; the closed-loop feedback and system reconstruction mechanism is introduced to enhance the adaptability of the regulation strategy and the stability of the system, and meet the efficient identification and coordinated scheduling demand of flexible resources under the new power system.

A display device PN comprising a first substrate I IO; a plurality of top pads disposed on the first substrate TPAD; a second substrate 130 below the first substrate; a plurality of bottompads below the second substrate BPAD; a plurality of side lines SRL on side surfaces of the first and second substrates connecting the plurality of top pads and the plurality of bottompads. Each of the plurality of top and bottom pads includes: a plurality of first pads disposed in first pad areas TPA I / BPAI of the first edges EGI, and a plurality of second pads disposed in second pad areas TPA2 / BPA2 of the second edges EG2 of the first and second substrate. A high potential and low potential voltage is applied to the first and second plurality of padsrespectively. A plurality of ground pads TGNP disposed in first edges of the first and the second substrate are spaced apart with the plurality of first pads therebetween.

Disclosed is a system for calculating the potential for a player who is playing a game to leave the game by using an artificial intelligence algorithm. Training data includes play data which is data related to the play history for the game of the player, player information which is information about the personal characteristics of the player, and game data which is data representing the characteristics of the game. In addition, for supervised learning of an artificial intelligence algorithm, leave result data, which is data of an actual result of the player's leaving the game, is used for the learning. The potential for leaving is determined on the basis of a prescribed elapsed time from the final time point at which the player actually played the game. The advertising effectiveness can be increased by performing a targeted advertising for a player determined to have a high potential of leaving.

The invention relates to the technical field of geologic model analysis, in particular to a coal bed gas fracturing three-dimensional well network seam network design method based on a geologic model, and the method comprises the steps: firstly constructing a three-dimensional discrete geologic model containing grid node mechanical parameters, and generating a three-dimensional dynamic induced stress potential energy tensor field; performing low-potential-energy gradient optimization calculation by using the field to obtain a shaft space topological coordinate avoiding a high-potential-energy area so as to reduce the well wall instability risk; meanwhile, fracture extension simulation is cut off through an equipotential surface threshold value in the field, and hydraulic fracture geometrical morphology parameters matched with formation energy constraint are accurately determined; and finally, integrating the parameters to generate an optimized three-dimensional well pattern seam network design scheme, and realizing efficient and safe fracturing design based on the rock mass accumulated deformation energy distribution characteristics.

The invention provides a semiconductor device capable of adjusting a cathode voltage of a diode to a proper voltage even if a high voltage is applied to an N-type high potential region. The semiconductor device (51) includes N-type semiconductor regions (21, 22) selectively provided in an upper layer portion of the N-type high withstand voltage separation region (2), and a P-type semiconductor region (31) selectively provided in an upper layer portion of the N-type high withstand voltage separation region (2) and to which a power supply voltage (V1) lower than the power supply voltage (V2) is supplied. The N-type semiconductor region (22) is disposed closer to the N-type high-potential region (3) than the N-type semiconductor region (21) and the P-type semiconductor region (31), and the P-type semiconductor region (31) is disposed between the N-type semiconductor region (21) and the N-type high-potential region (3) in plan view. A power supply voltage (V2) is supplied to the anode of the diode (D4), the cathode of the diode (D4) is electrically connected to the N-type semiconductor region (21), and the N-type semiconductor region (22) is electrically connected to the N-type high potential region (3).

The application discloses a kind of control systems of bar brake apron, it is related to automatic control technology.It includes, high position proximity switch, whether the position of apron is in high position is used to detect;If the apron is in high position, a high electrical signal is output;Low position proximity switch, whether the position of apron is in low position is used to detect;If the apron is in low position, a low electrical signal is output;Controller, the electrical signal that the high position proximity switch and low position proximity switch output is used to gather, the action of apron is controlled according to the electrical signal;And take a latch, the high potential signal of the high position proximity switch is used to set the latch operation;The initial signal of the periodic command of the apron is used to reset the latch operation.The application guarantees brake apron normal continuous action, does not cause apron next time inaction due to high signal loss, guarantees the stable order of production, effect is remarkable.