199 results about "High potential" patented technology

The invention relates to the technical field of fuel cell control, and discloses a control method of a hydrogen fuel system controller, which comprises the following steps: in response to a system shutdown instruction, controlling a DC / DC converter to maintain operation and request a preset scavenging current, and consuming residual reaction gas in a flow channel and a pipeline by using an electrochemical power generation reaction in an electric pile; meanwhile, hydrogen-cut air-down operation is executed, and the average single voltage of the electric pile is collected in real time; when it is monitored that the average monomer voltage is reduced to be below a preset anti-corrosion safety threshold value, the DC / DC converter is controlled to be disconnected, and mechanical purging is started. A time sequence interlocking mechanism of electrochemical energy depletion and mechanical purging is established, a high-potential retention path in the shutdown process is blocked from the physical and chemical source, and the safety of the shutdown is improved. Reverse polarity corrosion caused by a hydrogen-air interface effect is avoided, and the service life of the galvanic pile is prolonged.

The invention discloses a diamond microstructure precision grinding system and method with visual positioning, and the method comprises the following steps: collecting a microscopic visual image, calibrating a visual coordinate system and a machine tool coordinate system, and building a unified positioning coordinate system; extracting composite visual features, constructing an energy field, performing adaptive partitioning, and generating risk partitioning codes; the risk partition codes are input into a double-flow network, grinding signals are input into grinding branches, and parameter tracks are generated; precisely grinding according to a segmented parameter track, reducing the cutting depth and the speed in a high potential energy area, and increasing the speed in a low potential energy area; after grinding, obtaining a three-dimensional shape, performing error analysis and energy spectrum generation, and mapping to risk partition coding; and according to the error energy and the energy field, the grinding priority is judged, and high-priority partitions are selectively ground and remeasured. According to the method, the visual potential energy field is constructed and the improved double-flow neural network is fused, so that accurate positioning, self-adaptive grinding control and high-precision micro-area grinding of the diamond microstructure are realized.

A semiconductor device includes first and second N-type semiconductor regions provided selectively in an upper layer part of an N-type high-breakdown voltage isolation region, and a P-type semiconductor region provided selectively in the upper layer part of the N-type high-breakdown voltage isolation region and to be supplied with a first power supply voltage lower than a second power supply voltage. The second N-type semiconductor region is arranged closer to an N-type high-potential region than the first N-type semiconductor region and the P-type semiconductor region. The P-type semiconductor region is arranged between the first N-type semiconductor region and the second N-type high-potential region in a plan view. A diode has an anode to be supplied with the second power supply voltage, and a cathode electrically connected to the first N-type semiconductor region. The second N-type semiconductor region is electrically connected to the N-type high-potential region.

The invention provides a negative plate of a solid-state battery. The negative plate comprises a current collector, a lithium-loving coating compounded on the current collector and a conductive layer compounded on the lithium-loving coating, the lithium-loving coating contains a lithium-loving element; the lithium-loving element comprises one or more of Mg, Pt, Sn, Ag, Al and Zn; and the conductive layer comprises a carbon material. By introducing the lithium-loving element and the high-potential material and utilizing a synergistic mechanism of the lithium-loving element and the high-potential material, the electrochemical window is further widened and the metal lithium deposition risk is reduced while the lithium deposition uniformity is improved. According to the negative electrode plate provided by the invention, the nucleation potential of the lithium-metal negative electrode plate and the resistance of the conductive material are controlled within a specific range, so that nucleation of lithium ions on the surface of the negative electrode current collector can be facilitated, meanwhile, the nucleation uniformity of the lithium ions on the surface of the negative electrode current collector can be improved, and the cycle life of the battery is further prolonged.

A multiphase LLC resonant converter of N phases (N represents an integer equal to or more than two) causes N resonant converters connected in parallel to a direct current power supply to operate with a phase difference of 360° / N. One of the resonant converters includes a lower adjustment inductor connected in parallel with primary windings of the lower conversion circuits. The one of the resonant converters includes an upper adjustment inductor connected in parallel with primary windings of upper conversion circuits. Outputs including high potential output terminals and low potential output terminals of the lower conversion circuits and the upper conversion circuits star connected at neutral points via a second resonant capacitor are connected.

Provided is a novel drive circuit. A level shift circuit has first to third transistors, first to third power supply lines, and first to fourth wiring lines. A back gate of the first transistor is electrically connected with the first wiring line. One of a source and a drain of the first transistor is electrically connected with the first power supply line. The potential of the first power supply line is higher than the potential of the second power supply line, the potential of the third power supply line is lower than the potential of the first power supply line and the potential of the second power supply line, the signal of the fourth wiring line switches from a low potential level to a high potential level when the signal supplied to the first wiring line is at a high potential level, and the signal of the fourth wiring line switches from the high potential level to the low potential level when the signal supplied to the first wiring line is at a low potential level.

The present invention provides a semiconductor device that can prevent sudden malfunctions even if a switching element fails, thereby improving reliability. [Solution] The semiconductor device comprises an upper arm 101 and a lower arm 102, each having a plurality of switching elements 10a to 10h. Multiple units (10a, 10b), (10c, 10d) are formed by connecting multiple switching elements 10a to 10d of the upper arm 101 in series between the high-potential terminal P and the neutral point 15 of the upper arm 101 and the lower arm 102, and these units are connected in parallel between the high-potential terminal P and the neutral point 15. Multiple units (10e, 10f), (10g, 10h) are formed by connecting multiple switching elements 10e to 10h of the lower arm 102 in series between the low-potential terminal N and the neutral point 15, and these units are connected in parallel between the low-potential terminal N and the neutral point 15.

The present application provides a display panel (100) and a display apparatus (200), wherein the display panel (100) includes a pixel circuit (P), the pixel circuit (P) includes an amplitude modulation subcircuit (P2) and a pulse width modulation subcircuit (P1), the display panel (100) also includes a substrate (10), a voltage division signal line (21), and a first constant voltage signal line (31), the voltage division signal line (21) is located at a side of the substrate (10), the voltage division signal line (21) extends along a first direction (X), the first constant voltage signal line (31) is located at the side of the substrate (10), the first constant voltage signal line (31) extends along a second direction (Y) and transmits a high potential voltage to the pulse width modulation subcircuit (P1), and the first direction (X) intersects with the second direction (Y), wherein a plurality of the first constant voltage signal lines (31) are electrically connected to a plurality of the voltage division signal lines (21). In an embodiments of the present application, by adding the voltage division signal line (21) in the display panel (100), and cross-connecting the voltage division signal line (21) with the first constant voltage signal line (31), a mesh structure for transmitting a first power supply voltage is formed, so as to improve the stability of the first power supply voltage, so that the light-emitting element (F) can be turned on and off accurately, thereby improving the display reliability of the display panel (100).

A display device capable of reducing external light reflection by arranging signal lines supplying signals to sub-pixels on the same plane as the pixel electrode of the light-emitting device is described. The display includes signal lines—such as data lines, high-potential voltage lines, and reference voltage lines—formed in the same layer as the pixel electrode to minimize optical interference from stacked reflective materials. These lines are implemented as multi-layer structures comprising a transparent electrode material in a lower layer and a low-reflectance conductive material in an upper layer. A color filter is disposed below the pixel electrode and second signal lines to refract and reduce external light. Light-shielding lower patterns are arranged beneath gate lines and connection patterns. Transparent active layers of driving and sensing transistors serve as branch lines, enhancing optical performance and circuit compactness. This structure also improves process integration and manufacturing efficiency.

The application provides a hierarchical and orderly regulation method based on flexible load group schedulable potential evaluation, aiming at solving the problems of inaccurate model, single evaluation dimension, uneven resource allocation and poor response fairness in the coordinated scheduling of multiple types of flexible load. The hierarchical and orderly regulation method based on schedulable potential evaluation constructs an energy-power-time three-dimensional evaluation system to improve the comprehensive characterization of the regulation ability of flexible load; through clustering, hierarchical and dynamic rotation mechanism, the precise screening and fair calling of high potential load are realized; the closed-loop feedback and system reconstruction mechanism is introduced to enhance the adaptability of the regulation strategy and the stability of the system, and meet the efficient identification and coordinated scheduling demand of flexible resources under the new power system.

The invention relates to the technical field of geologic model analysis, in particular to a coal bed gas fracturing three-dimensional well network seam network design method based on a geologic model, and the method comprises the steps: firstly constructing a three-dimensional discrete geologic model containing grid node mechanical parameters, and generating a three-dimensional dynamic induced stress potential energy tensor field; performing low-potential-energy gradient optimization calculation by using the field to obtain a shaft space topological coordinate avoiding a high-potential-energy area so as to reduce the well wall instability risk; meanwhile, fracture extension simulation is cut off through an equipotential surface threshold value in the field, and hydraulic fracture geometrical morphology parameters matched with formation energy constraint are accurately determined; and finally, integrating the parameters to generate an optimized three-dimensional well pattern seam network design scheme, and realizing efficient and safe fracturing design based on the rock mass accumulated deformation energy distribution characteristics.

The invention provides a semiconductor device capable of adjusting a cathode voltage of a diode to a proper voltage even if a high voltage is applied to an N-type high potential region. The semiconductor device (51) includes N-type semiconductor regions (21, 22) selectively provided in an upper layer portion of the N-type high withstand voltage separation region (2), and a P-type semiconductor region (31) selectively provided in an upper layer portion of the N-type high withstand voltage separation region (2) and to which a power supply voltage (V1) lower than the power supply voltage (V2) is supplied. The N-type semiconductor region (22) is disposed closer to the N-type high-potential region (3) than the N-type semiconductor region (21) and the P-type semiconductor region (31), and the P-type semiconductor region (31) is disposed between the N-type semiconductor region (21) and the N-type high-potential region (3) in plan view. A power supply voltage (V2) is supplied to the anode of the diode (D4), the cathode of the diode (D4) is electrically connected to the N-type semiconductor region (21), and the N-type semiconductor region (22) is electrically connected to the N-type high potential region (3).

The invention discloses a lithium battery positive electrode material recovery method based on a redox medium, which comprises the following steps: (1) reduction leaching of a high-potential positive electrode material: mixing the redox medium in a reduction state with the high-potential positive electrode material in an acid solution, and carrying out reduction leaching at normal temperature under the action of the high-potential positive electrode material to obtain the high-potential positive electrode material; the oxidation-reduction medium in the reduction state is oxidized into an oxidation state, and meanwhile, high-valence metal ions in the positive electrode material are reduced into low-valence metal ions which are easily dissolved in acid, so that lithium ions and the metal ions are jointly leached; (2) oxidizing and leaching the low-potential positive electrode material and regenerating a medium: adding the low-potential positive electrode material into the solution obtained in the step (1) at normal temperature; under the action of the residual acid in the solution and the oxidation-state medium, low-valence metal ions in the positive electrode material are oxidized into high-valence ions, meanwhile, ions such as iron and lithium are dissolved out and enter the solution, and the oxidation-state medium is reduced into a reduction state.

This application provides a microfluidic driving circuit and its driving method, as well as a microfluidic device, including a charging unit, a driving unit, and a voltage boosting unit. The charging unit is connected to a data line and the control terminal of the driving unit. The voltage boosting unit includes a first energy storage subunit and a first reset subunit. A first end of the first energy storage subunit is connected to the control terminal of the driving unit at a first connection node, and a second end of the first energy storage subunit is connected to a second path terminal of the driving unit at a second connection node. The first reset subunit is connected to the second connection node and a low-potential voltage source, and its control terminal is connected to a second scan signal line. Specifically, by setting the voltage boosting unit, the potential of the first connection node can be increased during the writing of a high potential to the driving electrode, so that the driving unit can maintain its conduction state even if there is leakage at the first connection node, thereby improving the accuracy and stability of the microfluidic driving circuit.

The application provides a semiconductor device, comprising a U-shaped boost diode, the U-shaped boost diode comprising a first isolation structure arranged below a first field oxide region, a source terminal and a base terminal, and a second isolation structure arranged below a second field oxide region, the first isolation structure and the second isolation structure are arranged in the same layer and are spaced apart, and a part of the first isolation structure along a thickness direction and a part of the second isolation structure along the thickness direction are located in a substrate, and the remaining part of the first isolation structure along the thickness direction and the remaining part of the second isolation structure along the thickness direction are located in an epitaxial layer. The second isolation structure in the application can disperse the electric field across the high potential, so as to prevent the electric field from concentrating, so that the electric field does not concentrate at the source terminal at the bottom of the U-shaped boost diode, and the breakdown voltage BV of the boost diode in the semiconductor device is increased.

A semiconductor module is provided comprising a stacked substrate in which a plurality of wiring layers are stacked, and a plurality of semiconductor devices mounted on a first surface of the stacked substrate, wherein the plurality of wiring layers comprise a first wiring layer with high-potential wiring to which a high potential is applied, a second wiring layer with low-potential wiring to which a low potential is applied, and a third wiring layer with interconnecting wiring that connects the plurality of semiconductor devices mounted on the first surface of the stacked substrate, and the high-potential wiring and the low-potential wiring overlap at least partially in a stacking direction.

According to an aspect of the disclosure, a display device includes a display panel in which a plurality of subpixels are disposed. Further, the display device includes a data driver configured to supply a plurality of data voltages to the plurality of subpixels through a plurality of data lines. Further, the display device includes a gate driver configured to supply a plurality of gate signals to the plurality of subpixels through a plurality of gate lines. Each of the plurality of subpixels includes a light emitting diode, a driving transistor, and a variable resistance circuit disposed in series between a low potential voltage terminal and a high potential voltage terminal. When each of the plurality of subpixels implements a low gray scale, the variable resistance circuit increases resistance between the high potential voltage terminal and the driving transistor. Accordingly, the low gray scale can be normally implemented.

The invention specifically relates to a high-voltage fuse residual life evaluation method and system based on real-time monitoring, and relates to the technical field of high-voltage power equipment monitoring and life evaluation. A feature vector construction module; a differential topology analysis module; a second-order trend verification module; and a life evaluation module. According to the invention, targeted hardware model selection adapts to a high-voltage electromagnetic and high-potential isolation environment, the current and temperature acquisition units both adopt an isolation design and an anti-interference sensor, and a photoelectric isolation technology is combined to ensure that data acquisition is safe and reliable; meanwhile, current-temperature time sequence deviation is eliminated through thermal lag compensation, load fluctuation interference is stripped by means of a normalized thermal-electric coupling coefficient, systematic errors such as environment temperature change and sensor drift are counteracted through differential topology analysis, and a single-phase aging fault is positioned.

Disclosed is a display panel in which a high-potential voltage line is also provided between pixels adjacent to each other in a row direction such that driving circuits of adjacent pixels are arranged to be symmetrical to each other around the high-potential voltage line. To this end, a position of a driving circuit for at least one sub-pixel among a plurality of sub-pixels in one pixel faces a position of a driving circuit for at least one corresponding sub-pixel among a plurality of sub-pixels for another pixel adjacent to the one pixel in a row direction in a column direction. Accordingly, column line defects due to a deviation between parasitic capacitances of sub-pixels of odd and even rows emitting light of the same color according to a process change are suppressed.

This invention discloses a method for preparing anion-controlled sodium-ion layered cathode material, comprising the following steps: mixing a metal salt of the sodium-ion layered material with an anion source, drying, and then sintering at high temperature to obtain anion-controlled sodium-ion battery layered cathode material solid powder particles. The incorporated anion element can suppress the redox reaction of oxygen at high potentials, thereby enhancing the high-potential capacity and cycle stability of the material. According to this invention, the process is simple, and the rate performance and electrochemical stability of the obtained cathode material are significantly improved.

The utility model discloses a Hi-pot automatic testing machine with single-time and cyclic multi-time testing functions, which comprises a rack, a testing chamber, an industrial computer, a Hi-pot high-voltage tester, a first horizontal conveying device, a second horizontal conveying device, a third horizontal conveying device, a fourth horizontal conveying device and an electric control box, the first horizontal conveying device is arranged at the bottom in the test chamber, and the second horizontal conveying device is arranged below the first horizontal conveying device. The third horizontal conveying device and the fourth horizontal conveying device are arranged on the left side and the right side of the first horizontal conveying device and the left side and the right side of the second horizontal conveying device respectively, and each of the third horizontal conveying device and the fourth horizontal conveying device is connected with an up-down lifting mechanism. The third horizontal conveying device, the fourth horizontal conveying device, the first horizontal conveying device and the second horizontal conveying device are located on the same conveying horizontal plane, and the tested products are tested one time or circularly conveyed to a testing room to be tested circularly and repeatedly.

A power conversion device includes a high-potential side path that electrically connects a positive electrode terminal of a first electrical storage unit and a high-potential side terminal of an upper arm switch of an inverter, a low-potential side path that electrically connects a negative electrode terminal of a second electrical storage unit and a low-potential side terminal of a lower arm switch, a connection path, a neutral point capacitor, a parameter detection unit that detects an electrical parameter of the neutral point capacitor or the connection path, and a control unit. When performing switching control of the inverter to supply current to the connection path, the control unit determines whether an electrical disconnection abnormality has occurred on the connection path, based on a detection value of the parameter detection unit.

A power conversion device (10) comprising: a first power conversion unit (5) that converts the DC voltage applied by a first and a second capacitor unit (40, 42) into three-phase AC voltage; a second power conversion unit (6) that converts single-phase AC voltage or three-phase AC voltage into DC voltage and applies the DC voltage to the first and the second capacitor units (40, 42); a first parallel flat conductor (30) having three plate-shaped conductors to which high potential, medium potential and low potential from the first capacitor unit (40) are applied; a second parallel flat conductor (32) having three plate-shaped conductors to which high potential, medium potential and low potential from the second capacitor unit (42) are applied;and a third parallel flat conductor (34) arranged on a side opposite the first and second capacitor units (40, 42) with respect to the first and second parallel flat conductors (30, 32).

A display 100 has sub-pixels SP1-3, each including a driving transistor T2, storage capacitor Cst, and switching transistor T1. An auxiliary high potential power VDDA line traverses sub-pixels and ex

The embodiment of the invention provides a display panel and a display device. According to the display panel, the first high-potential line, the second high-potential line, the first power bus and the second power bus are arranged, so that different voltages can be set for the high-potential lines according to the turn-on difference of the sub-pixels, independent adjustment of the voltages of the sub-pixels is achieved, and power consumption is reduced. The second power bus is provided with the first opening, and the first high-potential line penetrates through the first opening in the second power bus to be connected with the first power bus, so that the power buses and the high-potential line can be connected on the same film layer, normal writing of signals is achieved, and the display panel works normally.

The present application belongs to the field of direct current transmission, and particularly relates to a support insulator, an insulating support structure and a direct current GIL. In order to solve the technical problem that the electric field lines pass through the support insulator in the prior art, resulting in that the normal field intensity of the side surface of the support insulator is too large, the present application provides a support insulator, which comprises a high-potential support surface for supporting a conductive rod, a low-potential support surface for supporting an insulating cylinder and a side surface, the high-potential support surface and the low-potential support surface are both arc surfaces, the axis of the high-potential support surface and the low-potential support surface corresponds to the axis of the matched conductive rod, and the extension line of the projection of the side surface of the support insulator in the direction of the axis of the corresponding conductive rod intersects with the axis of the conductive rod. The present application further provides an insulating support structure and a direct current GIL using the support insulator. By making the electric field lines parallel to the side surface of the support insulator, the normal field intensity of the side surface of the support insulator can be reduced, and the surface flashover voltage and the insulating strength of the support insulator can be improved.

This invention discloses a pulse output circuit and a high-voltage pulse power supply. The pulse output circuit includes: at least one output unit; each output unit includes two basic units, each basic unit including a power supply unit and a pulse network; each pulse network includes a bridge arm and an energy storage capacitor, the high-potential ends of which are connected to the positive output terminal of the corresponding power supply unit, and the low-potential ends of which are connected to the negative output terminal of the corresponding power supply unit. The midpoint of the first pulse network bridge arm is the positive output terminal of the corresponding output unit, the low-potential end of the first pulse network bridge arm is connected to the high-potential end of the second pulse network bridge arm, and the midpoint of the second pulse network bridge arm is the output terminal of the corresponding output unit; the positive output terminal of the first output unit is the positive output terminal of the pulse output circuit, the negative output terminal of the preceding output unit is connected to the positive output terminal of the following output unit, and the negative output terminal of the last output unit is the negative output terminal of the pulse output circuit. This invention can improve the accuracy of the pulse output voltage and eliminate pulse tailing.

The invention relates to an upright graphene heterojunction, application and a preparation method, the upright graphene heterojunction comprises a substrate and an upright graphene layer which are arranged in a layered manner, and the upright graphene layer is internally provided with stannic oxide quantum dots. The stannic oxide quantum dots have a wide band gap characteristic and can form a heterojunction with a relatively high potential barrier with the substrate, so that dark current is remarkably inhibited, the noise of the device is reduced, a strong built-in electric field is established at the interface of the device, and the separation efficiency of photon-generated carriers is effectively improved. Besides, the stannic oxide quantum dots and the upright graphene layer have good coupling property, so that the efficient extraction of charges is facilitated, and meanwhile, the recombination loss of current carriers in the transmission process is also remarkably reduced. Based on the reasons, the stannic oxide quantum dots have obvious advantages in the aspects of improving the device carrier separation efficiency and the interface quality.

A power converter includes a power conversion unit and a controller. The power conversion unit includes legs. Each leg includes a first series connection of a high-potential side main switch and a low-potential side main switch, resonance capacitors, a power conversion unit, and a second series connection of two auxiliary switches and a resonance inductor. The resonance capacitors are connected to the high-potential side main switch and the low-potential side main switch in parallel, respectively. The controller controls switching of each switch included in the power conversion unit, controls each of the legs to execute soft switching, and corrects timing for switching the main switch or the auxiliary switch, such that an ON-time ratio of the main switch among the legs attains a predetermined ratio.

The object of the present invention is to provide a secondary battery that uses zinc as the negative electrode and copper(II) sulfide as the positive electrode, and has charge-discharge characteristics that enable high-capacity discharge at high potential using an alkaline electrolyte. [Solution] A secondary battery comprising a current collector containing copper, a positive electrode having a positive electrode active material layer, a gel electrolyte holding an alkaline aqueous solution, and a negative electrode having a negative electrode active material layer, wherein the positive electrode active material in the positive electrode active material layer is copper(II) sulfide, and the negative electrode active material in the negative electrode active material layer contains zinc.