853results about "Amplififers with field-effect devices" patented technology

An amplifying apparatus amplifies an input signal supplied to an input terminal and outputs an output signal from an output terminal. The apparatus includes a high-potential power supply line through which a high voltage is supplied; a low-potential power supply line through which a low voltage is supplied; a control unit; and a power supply in which one of the high and low voltages is a fixed voltage, and which generates, as the other of the high and low voltages, one of a first voltage in which a polarity of the fixed voltage is inverted, and a second voltage which is closer to the ground potential than the first voltage is. The control unit controls the power supply to cause the other of the high and low voltages to be switched between the first voltage and the second voltage in accordance with a signal level of the output signal.

The disclosure generally relates to a method and apparatus for providing high-speed, low signal power amplification. In an exemplary embodiment, the disclosure relates to a method for providing a wideband amplification of a signal by forming a first transmission line in parallel with a second transmission line, each of the first transmission line and the second transmission line having a plurality of superconducting transmission elements, each transmission line having a transmission line delay; interposing a plurality of amplification stages between the first transmission line and the second transmission line, each amplification stage having an resonant circuit with a resonant circuit delay; and substantially matching the resonant circuit delay for at least one of the plurality of amplification stages with the transmission line delay of at least one of the superconducting transmission lines.

A device for decoupling a supply voltage for HF amplifier circuits is described which includes an output line for coupling out an amplified signal, wherein one end of the output line, which is not used for coupling out signals, is connected to a circuit element designed as decoupling circuit. The circuit element has a low ohmic d.c. resistance and presents an HF-power absorption capacity that increases as the frequency increases, thus constituting a reflection-free termination for high frequencies. The circuit element is preferably constituted by several discrete subcircuits connected in succession. The device permits the operation of integrated distributed amplifiers of high performance at a low power loss caused by the decoupling circuit.

A power amplifier comprises a series stack of power amplifier devices, connected in parallel to the amplifier input for receiving an RF input signal, and having output terminals being connected in series to the amplifier output. An intermediate coupling capacitor is connected between each adjacent pair of power amplifier devices in the series stack of power amplifier devices for DC isolation of said power amplifier devices. This reduces the required DC supply voltage, as well as allowing shorting of individual power amplifier devices in response to variation in the DC supply voltage.

A transimpedance amplifier, which is useful as an optical fiber preamplifier, is disclosed. The illustrative embodiment exhibits four characteristics. First, it minimizes the equivalent input noise current. Second, it has a wide bandwidth. Third, it has a reasonably large output voltage, and fourth, it is stable over wide temperature and voltage ranges. The illustrative embodiment comprises a transimpedance stage and a gain stage. Both stages employ a pure NMOS design which contributes to the above four advantages. Bandwidth is further increased over the prior art by the use of inductive loads. The inductive loads of the illustrative embodiment are not physical inductors, but transistor-based “active” inductors: the combination of a resistor connected in series with the gate of an NMOS transistor.

Described herein are multi-band LNAs that reuse inductors for different frequency bands to minimize chip area. In an embodiment, a multi-band LNA is capable of operating in a narrowband (NB) and a wideband (WB) while reusing at least one input impedance matching inductor and at least one load inductor for both bands. The reuse of inductors results in a more efficient use of chip area. In an exemplary embodiment, the LNA comprises a common source transistor and a common gate transistor. In this embodiment, the LNA operates in a common source configuration using the common source transistor to amplify input signals in the NB, and operates in a common gate configuration using the common gate transistor to amplify input signals in the WB. The LNA reuses an input impedance matching inductor and a load inductor in both configurations, and thus both bands.

Electronic circuits and methods are provided for various applications including signal amplification. An exemplary electronic circuit comprises a MOSFET and a dual-gate JFET in a cascode configuration. The dual-gate JFET includes top and bottom gates disposed above and below the channel. The top gate of the JFET is controlled by a signal that is dependent upon the signal controlling the gate of the MOSFET. The control of the bottom gate of the JFET can be dependent or independent of the control of the top gate. The MOSFET and JFET can be implemented as separate components on the same substrate with different dimensions such as gate widths.

A novel RF power amplifier integrated circuit (PA IC), unit cell, and method for amplifying RF signals are disclosed. One embodiment of a PA IC includes at least two linear arrays comprising transistor device units, and at least one linear array comprising capacitors. The transistor device units include source nodes that are jointly coupled to a source bus, and selected gate nodes that are jointly coupled to a gate bus. First electrodes of the capacitors are also jointly coupled to the source bus, and second electrodes of the capacitors are jointly coupled to the gate bus. Each linear array comprising capacitors is disposed between at least two linear arrays comprising transistor device units. In one embodiment, the PA IC includes unit cells. In some embodiments, each unit cell comprises two transistor device units and one or more capacitors. The capacitors are disposed between the transistor device units. The unit cells are disposed in linear arrays so that the transistor device units are disposed in linear arrays and the capacitors are disposed in linear arrays.

A semiconductor device having a normal function means is provided, in which the amplitude of an output signal is prevented from being decreased even when a digital circuit using transistors having one conductivity is employed. By turning OFF a diode-connected transistor 101, the gate terminal of a first transistor 102 is brought into a floating state. At this time, the first transistor 102 is ON and its gate-source voltage is stored in a capacitor. Then, when a potential at the source terminal of the first transistor 102 is increased, a potential at the gate terminal of the first transistor 102 is increased as well by bootstrap effect. As a result, the amplitude of an output signal is prevented from being decreased.