Patents
Literature
1 results about "Snapback" patented technology
Efficacy Topic
Property
Owner
Technical Advancement
Application Domain
Technology Topic
Technology Field Word
Patent Country/Region
Patent Type
Patent Status
Application Year
Inventor
Snapback is a mechanism in a bipolar transistor in which avalanche breakdown or impact ionization provides a sufficient base current to turn on the transistor. It is used intentionally in the design of certain ESD protection devices integrated onto semiconductor chips. It can also be a parasitic failure mechanism when activated inadvertently, outwardly appearing much like latchup in that the chip seems to suddenly blow up when a high voltage is applied.
Read for memory cell with threshold switching selector
Technology for reading memory cells in a cross-bar memory array. Each cell has a threshold switching selector in series with a programmable resistance memory element. A current diverting resistor is connected to a selected word line while a read current is driven to the selected word line. Driving the read current to the selected word line causes a voltage across the memory cell to increase until the threshold switching selector switches on. After the threshold switching selector switches on the voltage across the memory cell drops rapidly thereby resulting in a snapback current. Some of the read current is diverted to the current diverting resistor as the voltage across the memory cell increases. When the threshold switching selector switches on the resistor continues to divert current from flowing through the memory cell to prevent excessive current from inadvertently changing the state of the programmable resistance memory element.
Owner:SANDISK TECHNOLOGIES LLC