Lateral power device with mixed conduction mode and method of making same

Abstract

The invention provides a lateral power device with a mixed conduction mode and a preparation method thereof, comprising a P-type substrate, a buried oxide layer, an N-type drift region, a P-type base region, an N-type buffer region, an N-type source region, a P-type Contact region, P-type collector region, emitter, collector, gate dielectric layer, gate electrode, N-type drift region surface has N-type strips and P-type strips, N-type strips and P-type strips are perpendicular to the device drift region surface The channel length direction is arranged alternately, and there is a dielectric buried layer in the drift region under the N-type strip and the P-type strip; there is a dielectric groove structure between the N-type strip, the P-type strip, the dielectric buried layer and the N-type buffer zone; the N-type strip and the P-type strip. The concentration of the P-type strip is greater than the concentration of the N-type drift region; the invention realizes the mixed conduction of the surface SJ-LDMOS and LIGBT, and can obtain lower conduction voltage drop, higher withstand voltage, faster switching speed, and more Low turn-off loss, and eliminate the snapback effect, greatly improving device performance.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and in particular relates to a lateral power semiconductor device with a mixed conduction mode and a preparation method thereof. Background technique [0002] Lateral Insulated Gate Bipolar Transistor (LIGBT) is a lateral power device that combines the advantages of lateral power MOSFETs and bipolar transistors, and has the characteristics of high input impedance and reduced conduction voltage. , are widely used in various power integrated circuits. Compared with traditional devices based on bulk silicon technology, devices manufactured using SOI technology have many advantages such as fast speed, low power consumption, high integration density, strong anti-latch ability, low cost, and good radiation resistance. Therefore, LIGBT devices based on SOI materials also have the advantages of good insulation performance, low substrate leakage current, small parasitic capacitance an...

AI Technical Summary

Problems solved by technology

When the LIGBT device is turned on, due to the conductance modulation effect in the drift region, a low turn-on voltage drop can be obtained, but when it is turned off, due to the existence of a large number of unbalanced carriers stored in the drift region, the turn-off time is long, Large turn-off loss

At the same time, due to the existence of the PN junction in the collector area of ​​the device, when the device is conducting forward, in the low collector voltage region, and at the same current density, the conduction voltage drop of LIGBT is larger than that of LDMOS devices, which is not conducive to the reduction of device loss characteristics. Small

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