The present application belongs to the technical field of power
semiconductor, and relates to an enhanced GaN
longitudinal field effect
transistor with reverse freewheeling capability. The main feature of the present application is that when
etching a P-GaN layer, the P-GaN layer under a gate is reserved, so that the enhanced GaN
longitudinal field effect
transistor is realized, and meanwhile, part of the unetched P-GaN layer at the other end of the device is reserved to form contact with a source
metal, so as to integrate a freewheeling
diode with an
anode and a source short-circuit and a
cathode and a drain short-circuit. The freewheeling
diode is only turned on in a reverse
conduction mode, and is turned off in a forward
conduction mode and a blocking mode, and does not affect the forward characteristics of the device. Compared with a freewheeling
diode connected in reverse parallel outside the device, the present application reduces parasitic parameters, improves
power density, and is simple in process and easy to implement.