The invention discloses a
junction temperature complementary modulation method suitable for a heterogeneous device
hybrid ANPC converter, based on a
hybrid device replacement type 3L-ANPC converter, the
junction temperature complementary modulation method comprises outer tubes S1 and S4, inner tubes S2 and S3 and clamping tubes S5 and S6, the inner tubes S2 and S3 and the clamping tubes S5 and S6 are all
hybrid devices, and the
junction temperature complementary modulation method comprises the following steps: S1, when loss is concentrated on the inner tubes, the inner tubes S2 and S3 and the clamping tubes S5 and S6 are mixed devices; if the
temperature difference between the Si IGBT and the SiC
MOSFET in the
hybrid device is greater than the threshold value, the switching sequence of the inner tubes S2 and S3 is adjusted from the first switching-on and then switching-off of the
MOSFET to the first switching-on and then switching-off and the middle switching-off of the
MOSFET; s2, analyzing the working mode of each current tube, and when the junction temperature of the
current time sequence switch is concentrated on the
diode of the inner tube, constructing a modulation strategy for canceling the use of a double-clamping
branch to conduct the current in a zero state; and S3, implementing the modulation strategy constructed in the S2, and if the temperature of the Si IGBT of the modulated inner tube is still lower than that of the SiC MOSFET, conducting the inner tube S2 and the inner tube S3 in the
half cycle only by the Si IGBT, and keeping the SiC MOSFET normally closed.