The invention relates to a low-
inductance SiC half-bridge
power module layout structure based on overlapped
copper bar conduction. Under the structure, the overlapped
copper bars are used for replacing bonding wires in a traditional packaging structure, pits are machined in the
copper bars to be connected with the power electrodes on the top face of the
chip, the copper bars are bent to be connected with the substrate coated copper, and
current conduction is achieved. Based on the overlapped copper bar structure, when the upper switch tube and the lower switch tube are switched on, mutual
inductance and mutual suppression exist between current paths on the lower conductive copper bar and the upper conductive copper bar, and the module has low parasitic
inductance; two ends of the upper-layer copper bar and the lower-layer copper bar are fixedly connected with the substrate, and the middle positions of the upper-layer copper bar and the lower-layer copper bar are fixedly connected with a
chip top
surface electrode, so that the module reliability is high; the thicknesses of the upper and lower copper bars are adjustable to ensure the through-current capability of the module; the copper bar is low in
processing cost, does not need a
cushion block, and reduces the number of connection interfaces. Therefore, compared with the existing
layout packaging structure, the module
layout structure provided by the invention has outstanding advantages in the aspects of parasitic inductance, outflow capacity and cost, and is suitable for popularization and application.