1711results about How to "Lower average current" patented technology

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repeatably produced. Forming a corrugated substrate prior to actual device formation allows the ridges on the corrugated substrate to be created using high precision techniques that are not ordinarily suitable for device production. MOSFETs that subsequently incorporate the high-precision ridges into their channel regions will typically exhibit much more precise and less variable performance than similar MOSFETs formed using optical lithography-based techniques that cannot provide the same degree of patterning accuracy. Additional performance enhancement techniques such as pulse-shaped doping, “wrapped” gates, epitaxially grown conductive regions, epitaxially grown high mobility semiconductor materials (e.g. silicon-germanium, germanium, gallium arsenide, etc.), high-permittivity ridge isolation material, and narrowed base regions can be used in conjunction with the segmented channel regions to further enhance device performance.

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repeatably produced. Forming a corrugated substrate prior to actual device formation allows the ridges on the corrugated substrate to be created using high precision techniques that are not ordinarily suitable for device production. MOSFETs that subsequently incorporate the high-precision ridges into their channel regions will typically exhibit much more precise and less variable performance than similar MOSFETs formed using optical lithography-based techniques that cannot provide the same degree of patterning accuracy. A multi step epitaxial process can be used to extend the ridges with different dopant types, high mobility semiconductor, and or advanced multi-layer strutures. For CMOS integrated circuits a capping layer is formed over the a first region. Epitaxial layers are formed in a second region. Then the capping layer is removed from the first region and a capping layer is formed over the second region. Epitaxial layers can than be formed in the first region.

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repeatably produced. Forming a corrugated substrate prior to actual device formation allows the ridges on the corrugated substrate to be created using high precision techniques that are not ordinarily suitable for device production. MOSFETs that subsequently incorporate the high-precision ridges into their channel regions will typically exhibit much more precise and less variable performance than similar MOSFETs formed using optical lithography-based techniques that cannot provide the same degree of patterning accuracy. Additional performance enhancement techniques such as pulse-shaped doping and “wrapped” gates can be used in conjunction with the segmented channel regions to further enhance device performance.

An objet of the present invention is to provide a semiconductor device with a new structure. Disclosed is a semiconductor device including a first transistor which includes a channel formation region on a substrate containing a semiconductor material, impurity regions formed with the channel formation region interposed therebetween, a first gate insulating layer over the channel formation region, a first gate electrode over the first gate insulating layer, and a first source electrode and a first drain electrode which are electrically connected to the impurity region; and a second transistor which includes a second gate electrode over the substrate containing a semiconductor material, a second gate insulating layer over the second gate electrode, an oxide semiconductor layer over the second gate insulating layer, and a second source electrode and a second drain electrode which are electrically connected to the oxide semiconductor layer.

Systems and methods are disclosed for controlling and diagnosing the health of a motorized system. The systems may comprise a diagnostics system and a controller, wherein the diagnostics system employs a neural network, an expert system, and / or a data fusion component in order to assess the health of the motorized system according to one or more attributes associated therewith. The controller may operate the motorized system in accordance with a setpoint and / or a diagnostics signal from the diagnostics system. Also disclosed are methodologies for controlling and diagnosing the health of a motorized system, comprising operating a motor in the motorized system in a controlled fashion, and diagnosing the health of the motorized system according to a measured attribute associated with the motorized system, wherein the motor may be operated according to a setpoint and / or the diagnostics signal.

Provided is a remote control system with which leakage current flowing in a switch can be reduced so that power consumption can be reduced. The remote control system includes a portable information terminal, a server, and an electric device. The on / off of the switch included in the electric device is controlled using information transmitted from the portable information terminal to the server. The switch includes a transistor formed using a semiconductor whose band gap is larger than that of single crystal silicon in a channel formation region.

A memory cell device includes a bottom electrode, pipe shaped member comprising phase change material and a top electrode in contact with the pipe-shaped member. An electrically and thermally insulating material is inside the pipe-shaped member. An integrated circuit including an array of pipe-shaped phase change memory cells is described.

The present invention allows remote antenna units for radio frequency signal transmission and receipt to operate without the requirement for remote electrical power supplies or for connecting cables that incorporate electrical conductors. According to an aspect of the present invention, an optical communications system employing radio frequency signals comprises a central unit; at least one remote unit having at least one optoelectronic transducer for converting optical data signals to radio frequency signals and converting radio signals to optical signals and at least one antenna to receive and send radio frequency signals; at least one optical fiber data link between the central unit and the remote unit for transmitting optical data signals therebetween; and at least one optical fiber power link between the central unit and the remote unit for providing electrical power at the remote unit.

In a semiconductor device including a transistor, the transistor is provided over a first insulating film, and the transistor includes an oxide semiconductor film over the first insulating film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the oxide semiconductor film and the gate electrode, and a source and a drain electrodes electrically connected to the oxide semiconductor film. The first insulating film includes oxygen. The second insulating film includes hydrogen. The oxide semiconductor film includes a first region in contact with the gate insulating film and a second region in contact with the second insulating film. The first insulating film includes a third region overlapping with the first region and a fourth region overlapping with the second region. The impurity element concentration of the fourth region is higher than that of the third region.

The reliability of a transistor including an oxide semiconductor can be improved by suppressing a change in electrical characteristics. A transistor included in a semiconductor device includes a first oxide semiconductor film over a first insulating film, a gate insulating film over the first oxide semiconductor film, a second oxide semiconductor film over the gate insulating film, and a second insulating film over the first oxide semiconductor film and the second oxide semiconductor film. The first oxide semiconductor film includes a channel region in contact with the gate insulating film, a source region in contact with the second insulating film, and a drain region in contact with the second insulating film. The second oxide semiconductor film has a higher carrier density than the first oxide semiconductor film.

A flexible lighting device, comprising an elongated flexible tube including a translucent tubular shell with opposed tube ends, a flexible helical circuit board positioned in said tube extending between said opposed tube ends, said flexible helical circuit board having an exterior surface spaced from said tubular shell. Electrical circuitry is mounted to the circuit board and is connected to an external input source and an output source of electrical power. A plurality of light emitting diodes (LEDs) is mounted to the exterior surface of the helical circuit board and is electrically connected to the electrical circuitry. The LEDs are positioned adjacent to the tubular wall. The invention includes a method of making the flexible lighting device including providing a parallelogram-shaped flat circuit board having long edges and short edges with acute angles and obtuse angles and further including a stiffening member embedded with said flat circuit board. Electrical circuitry mounted to the flat circuit board and LEDs mounted to the flat circuit board and to the electrical circuitry thereon, are all rolled and extended into a flexible cylindrical circuit board having spaced spirals and gaps that hold the LEDs, and then inserted into the flexible tubular housing. Power input and power output connectors are added to the electrical circuitry of the flexible helical circuit board, and connector end caps are secured to the opposed ends of the tubular housing.