The invention relates to a trench
triode and a manufacturing method thereof. The trench
triode comprises an N-type substrate, an N-type epitaxial layer which is formed on the N-type substrate, a P-type base region which is formed on the surface of the N-type epitaxial layer, multiple trenches which penetrate through the P-type base region and extend to the N-type epitaxial layer, a P-type high doped region which is formed on the side wall of multiple trenches, P-type
polycrystalline silicon which is arranged in multiple trenches, an N-type region which is formed on the surface of the P-type base region, a TEOS
oxide layer which is formed on the P-type
polycrystalline silicon and the -type high doped region, emitter polysilicon which is formed on the N-type region, a
contact hole which penetrates through the TEOS
oxide layer and is corresponding to the P-type
polycrystalline silicon, front
metal and back
metal. The front
metal comprises an emitter which is formed on the emitter polysilicon and a base
electrode which is formed on the TEOS
oxide layer and connected with the P-type polycrystalline
silicon through the
contact hole. The back metal is formed on the surface, which is awayfrom the N-type epitaxial layer, of the N-type substrate to act as the collecting
electrode.