The invention discloses a quick diffusion annealing method. A primary source introduction and pre-deposition process is carried out at below 800 DEG C. After deposition, aerobic heating advance is carried out, and the temperature can rise up to 840-880 DEG C. A PN node advanced at the moment is deep. Then, an aerobic cooling process is carried out, and the temperature drops to 810-850 DEG C. Secondary source introduction is carried out, which is a key step for quick annealing. After that, the furnace door is half-opened immediately, a large amount of nitrogen is introduced, and quick cooling and annealing are carried out. The lattice is repaired to a certain degree, but the phosphorus source still needs certain advance time. Thus, the furnace door is closed slowly, and the temperature goes back to a constant state. The beneficial effects of the method are as follows: through secondary source introduction, the surface concentration is increased, and the filling factor is improved; through lattice repair, thermal damage is reduced, the open-circuit voltage and short-circuit current are improved, and the conversion efficiency of cells is improved; and through quick cooling, the total process time is reduced, the process efficiency is improved, and the production capacity is increased.