Laser boron doped selective emitter TOPCon structure cell and preparation method thereof

A selective and emitter technology, which is applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems of deeper junction and lower surface doping concentration, and achieve the effect of increasing fill factor, improving conversion efficiency, and benefiting cost

Active Publication Date: 2019-10-01
TRINA SOLAR CO LTD +1
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  • Application Information

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Problems solved by technology

At present, using borosilicate glass (BSG) as a doping source for laser doping is also a technical difficulty in the world. It is difficult for lasers to dope boron from BSG into P + layer, will result in P + The surface doping concentration of the layer is reduced, and the junction depth is deepened

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  • Laser boron doped selective emitter TOPCon structure cell and preparation method thereof
  • Laser boron doped selective emitter TOPCon structure cell and preparation method thereof

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Embodiment 1

[0025] The preparation method of the laser boron doped selective emitter TOPCon solar cell of the present invention comprises the following steps, such as figure 1 Shown:

[0026] Ⅰ. Texturing and RCA cleaning of N-type silicon wafers;

[0027] Ⅱ. Carry out boron diffusion, where BBr 3 N 2 Flow rate 130sccm, push temperature: 900°C; push time: 2h, push to form P with high boron surface concentration ++ layer without oxidation process;

[0028] Ⅲ. Use 532nm green nanosecond Q-switched laser with power of 28W and scanning speed of 20m / s to dope the metal grid line area;

[0029] Ⅳ. After cleaning, put it back into the diffusion furnace for oxidation. The oxidation process parameters are: O 2 The flow rate is 30sccm, the oxidation temperature is 920°C; the oxidation time is 2h, so as to form a selective emitter;

[0030] Ⅴ. Removal of BSG and P on the back + Layer, prepare Tunnel oxide layer (tunnel oxide layer) and doped thin film silicon layer on the back;

[0031] Ⅵ. R...

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Abstract

The invention discloses a laser boron doped selective emitter TOPCon structure cell and a preparation method thereof. The method comprises the following steps: cleaning and texturing an n-type siliconwafer; during boron diffusion, promoting the formation of a P++ layer with high boron surface concentration without an oxidation process; promoting the doping in a grid line region by laser; after cleaning, putting the n-type silicon wafer back to a diffusion furnace for oxidization to form a selective emitter; removing BSG and a P+ layer on the back, and preparing a tunneling oxide layer and a doped film silicon layer on the back; removing the polycrystalline silicon produced by roll plating on the front and the BSG obtained in step II, and depositing a passivation layer and a SiNx antireflection film on both sides; and screen-printing a double-sided electrode. The preparation method of the invention can not only improve the open circuit voltage of the cell, but also improve the fillingfactor of the cell and finally improve the conversion efficiency of the Topcon solar cell.

Description

technical field [0001] The invention belongs to the technical field of photovoltaics, and in particular relates to a laser boron-doped selective emitter TOPCon structure battery and a preparation method thereof. Background technique [0002] Improving battery conversion efficiency and reducing battery manufacturing costs have always been the goals pursued by the industry. A large number of new high-efficiency battery structure technologies have been proposed, and a large number of researches have been carried out by many scientific research institutions and enterprises at home and abroad. Among them, the tunnel oxide passivating contacts (Tunnel Oxide Passivating Contacts, TOPCon) solar cell uses a laminated film of ultra-thin silicon dioxide and heavily doped silicon film as the back passivation contact. After high temperature annealing, it has excellent Excellent passivation performance and extremely low contact resistance, high temperature resistance. The photoelectric ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/18
CPCH01L31/022425H01L31/1804Y02E10/547Y02P70/50
Inventor 林文杰何宇龚剑邹杨王尧袁玲刘成法陈达明陈奕峰沈辉
Owner TRINA SOLAR CO LTD
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