85results about How to "Reduce compounding" patented technology

The invention discloses a solar cell and a preparation method and application thereof, and relates to the technical field of solar cells. P-type doped regions and N-type doped regions are alternately arranged on the back surface of the crystalline silicon substrate, a boron diffusion doped layer, a first passivation layer and a first antireflection layer are sequentially arranged in the P-type doped regions, and a phosphorus-doped silicon oxide layer, a phosphorus-doped polycrystalline silicon layer, a second passivation layer and a second antireflection layer are sequentially arranged in the N-type doped regions from the surface of the crystalline silicon substrate. A traditional TBC battery P region mostly adopts a two-step process of intrinsic amorphous silicon deposition and boron diffusion to form a polycrystalline silicon layer, but the P region does not contain the polycrystalline silicon layer and can be prepared through a one-step boron diffusion process, so that the process steps can be reduced, and the process time can be shortened; and the action of laser and P-region polycrystalline silicon is avoided, the patterning difficulty of the battery is reduced, and the production yield of the battery can be greatly improved.

The invention relates to the technical field of solar cells, in particular to a film layer structure for improving UV attenuation of a TOPcon cell. In order to improve the passivation effect of the front face of the TOPCon cell, an aluminum oxide passivation layer is generally arranged on the surface of a BSG layer on the front face of the TOPCon cell, but the aluminum oxide passivation layer is poor in ultraviolet resistance and prone to being damaged by ultraviolet light, and then the service life of the cell is affected. Aiming at the problem, the invention provides the film layer structure for improving UV attenuation of the TOPcon battery, the second silicon oxide layer and the first silicon oxide layer are respectively arranged above and below the aluminum oxide layer, and the silicon nitride layer is arranged on the surface of the second silicon oxide layer, so that the passivation effect of the front surface of the obtained TOPcon battery is remarkably improved, the attenuation speed of the battery is effectively reduced, and the service life of the battery is prolonged. And the service life of the battery is prolonged.

The invention relates to the technical field of photovoltaic cells, and discloses a back contact solar cell and a preparation method thereof. The preparation method comprises the following steps: providing a substrate layer of a first conductive type having a first surface and a second surface opposite to each other; a first groove is formed in the first surface, and a bulge is formed beside the first groove; performing doping treatment on the inner wall surface of the first groove to form a first doping layer; the first doped layer is of a second conductive type; forming a passivation layer on the surface of the first doping layer; a second groove isolated from the first groove is formed in the protrusion; forming a first tunneling oxide layer on the second groove; forming a second doping layer of the first conduction type in the second groove and on the first tunneling oxide layer; a first electrode and a second electrode are formed, the first electrode penetrates through the passivation layer to be connected with the first doping layer, and the second electrode is connected with the second doping layer. The first groove and the second groove which are relatively isolated are formed by grooving at different positions of the substrate layer, so that efficient current collection is facilitated, short circuit is prevented, and the photoelectric conversion efficiency and the power generation efficiency are improved.

The invention discloses a method for improving the efficiency of a perovskite solar cell, and belongs to the technical field of solar cells. The insulating spacer film prepared between the electron transport layer and the perovskite layer of the perovskite solar cell by adopting the electron beam evaporation method has high uniformity, the cell interface structure can be optimized, defects are reduced, charge recombination loss is reduced, and the photoelectric conversion efficiency and stability are effectively improved. The insulating spacer layer not only can block external moisture and pollutants, reduce direct contact between the perovskite layer and the electron transport layer and prolong the service life of the cell, but also can inhibit internal ion migration and slow down performance degradation. By accurately regulating and controlling the thickness of the insulating spacer layer, charge transmission optimization and compound loss minimization are realized. An innovative technical path is provided for research and development of efficient and stable perovskite solar cells, and further development of the solar cell technology is expected to be promoted.

The invention provides a gallium oxide ultraviolet detector based on a difunctional self-assembly passivation layer and a preparation method thereof, the gallium oxide ultraviolet detector comprises a substrate layer, an oxidant layer and the difunctional self-assembly passivation layer which are arranged from bottom to top, and two sides of the difunctional self-assembly passivation layer are provided with metal electrodes in contact with a gallium oxide layer. Wherein the bifunctional self-assembly passivation layer comprises a first passivation layer and a second passivation layer which are arranged from bottom to top, the passivation material of the first passivation layer is a material for reducing surface defects of the gallium oxide layer, and the passivation material of the second passivation layer is a material for enhancing the ultraviolet photon absorption rate. Passivation materials with different functions are combined to form the dual-function self-assembly passivation layer, and the dual-function self-assembly passivation layer is adopted to perform passivation treatment on the gallium oxide ultraviolet detector, so that the performance of the gallium oxide ultraviolet detector is jointly improved from two aspects of reducing surface defects of gallium oxide and enhancing ultraviolet photon absorption.

The invention relates to a perovskite solar cell and a preparation method thereof, and belongs to the technical field of solar cells. The perovskite solar cell comprises a conductive substrate, a hole transport layer, a passivation layer, a perovskite layer, an electron transport layer and a metal electrode which are arranged in sequence, the material of the passivation layer is selected from one or more of mercaptoethylamine, ethylenediamine and propylamine; and the thickness of the passivation layer is 1 nm to 10 nm. Through the introduction of interface passivator molecules, the interface between the hole transport layer and the perovskite layer is improved. The surface wettability of the PTAA thin film is enhanced, so that the perovskite precursor solution can form a uniform and compact perovskite layer on the PTAA / SCAs thin film, the carrier separation and transmission efficiency at an interface is improved, and the stability of a device is enhanced.

The invention discloses a solar single-crystal efficient TOPCon + SE battery piece ultrahigh sheet resistance diffusion process which mainly comprises a front boron process, an SE process and a rear oxidation process, and the front boron process comprises high-temperature oxidation before diffusion and a diffusion process composed of three-step diffusion and heating propulsion. According to the invention, a layer of SiO2 can be coated on the surface of the silicon wafer through high-temperature oxidation before diffusion and is used as an anti-reflection film layer; the PN junction is prepared by adopting a step-by-step diffusion method, so that the advantage of good junction uniformity can be realized, boron can be uniformly distributed on the surface of a silicon wafer through a specific boron diffusion method, and meanwhile, boron elements can be better deposited on the surface of the silicon wafer through variable-temperature diffusion and propulsion; by adding the SE process, the square resistance can reach 700-800 ohms, the junction depth in the grid line area is deeper, the increase of ohms becomes better, the cell center recombination is reduced due to the lower surface concentration, and the open-circuit voltage of the cell is improved; and the post-oxidation process has an annealing effect and can repair lattice damage and the like.

The invention relates to a cadmium telluride solar cell and a preparation method thereof, the cadmium telluride solar cell comprises a TCO layer, a buffer layer, a window layer, a light absorption layer, a back electrode layer and a back contact layer, the back contact layer is located between the light absorption layer and the back electrode layer, and the back contact layer is made of boron or carbon doped transition metal nitride. The back contact layer made of boron or carbon doped transition metal nitride is introduced between the light absorption layer and the back electrode layer, and transition gold elements in the back contact layer can be compatible with the cadmium telluride absorption layer, so that the obstruction of a contact barrier to hole transport is reduced, the interface characteristic between the CdTe absorption layer and the back contact layer is optimized, and the light emitting efficiency is improved. According to the present invention, the cadmium telluride absorption layer can form the good ohmic contact with the cadmium telluride absorption layer, such that the effect of the back field buffer layer can be provided so as to reflect the photo-induced electrons on the back surface in the cadmium telluride to the PN junction, such that the recombination of the electrons on the back surface can be substantially reduced, and the carrier collection efficiency of the cell can be improved so as to improve the open-circuit voltage and the conversion efficiency of the cell;

The invention discloses a carbon nitride loaded metal diatom photocatalytic material as well as a preparation method and application thereof. The invention belongs to the field of photocatalytic materials. The invention aims to solve the technical problems of complex preparation process and low photocatalytic efficiency of the existing metal diatom photocatalyst. The method comprises the following steps: dissolving a nitrogen source and a phosphorus source in deionized water, and carrying out hydrothermal reaction to obtain a precursor; dissolving the precursor in a mixed solvent of alcohol, and then refluxing at constant temperature for a certain time to obtain a pre-product; and adding a metal compound solution capable of forming a conjugated system into the pre-product, carrying out ultrasonic treatment, heating in a constant-temperature water bath kettle, and calcining to obtain the carbon nitride loaded metal diatom photocatalytic material. The obtained photocatalytic material has the advantages of high visible light utilization rate, low photo-induced electron-hole recombination rate and high electron transfer rate. The method is used in the fields of photocatalytic hydrogen production, carbon dioxide reduction and organic matter oxidation.

The invention discloses an MXene quantum dot tip heterojunction material with high photothermal conversion efficiency. The MXene quantum dot tip heterojunction material comprises a substrate and a Co3O4 nanoneedle array structure grown on the substrate in situ, ti3C2MXene quantum dots are loaded on the surface of the Co3O4 nanoneedle, and the Ti3C2MXene quantum dots are fixed on the surface of the Co3O4 nanoneedle through the interaction force of heterogeneous charges. The invention also discloses a preparation method of the MXene quantum dot tip heterojunction material. The preparation method comprises the following steps: (1) preparing a Co3O4 nanoneedle structure arranged in an array on a substrate by using a hydrothermal method; and (2) under the irradiation of an ultraviolet lamp, putting the product in the step (1) into an MXene quantum dot solution, and soaking for 6-8 hours.

The invention discloses a preparation method of a crystalline silicon solar cell. The preparation method comprises the following steps: arranging a function adjusting layer on and / or in a passivation dielectric layer; electrode slurry is printed on the passivation dielectric layer and corresponds to the position of the function adjusting layer; sintering to form a metal electrode; the function adjusting layer comprises at least one of compounds containing specific cations, the compounds containing the specific cations can release the specific cations at the sintering temperature, and the specific cations are cations corresponding to elements involved in the glass network formation. According to the preparation method, minority carrier recombination can be effectively reduced, the passivation effect of the battery is improved, and the conductivity of the metal electrode is effectively improved.

The invention provides a defluorination method and a film deposition method for recovering the first round efficiency of a graphite boat. The defluorination method comprises plasma bombardment defluorination and / or high-temperature nitrogen purging defluorination. According to the defluorination method, washing and drying are not needed, efficient defluorination is achieved, meanwhile, the time cost is reduced, use of special gas is reduced, the production cost is saved, and large-scale application and popularization are facilitated.

A solar cell comprises a silicon substrate, a PN junction and a back electrode, wherein the PN junction and the back electrode are located on the back face of the silicon substrate. The front surface of the silicon substrate is provided with a grid line area and a non-grid line area, and the solar cell further comprises a front tunneling layer, a front doped polycrystalline silicon layer and a front electrode which are only positioned in the grid line area. According to the solar cell provided by the utility model, the front tunneling layer and the front doped polycrystalline silicon layer are arranged in the grid line area of the front to form a patterned front passivation contact structure, so that the direct contact between the front electrode and the silicon substrate is avoided, and the under-metal recombination of the front is reduced, thereby improving the cell efficiency and improving the product competitiveness.

The invention provides an improvement process of a solar cell P-N junction, a PERC cell and a manufacturing method of the PERC cell, and the improvement process comprises the steps: firstly removing a PSG layer after a silicon wafer is used for manufacturing a selective emitter, and then carrying out the oxidation growth of an oxidation protection layer, thereby enabling a dead layer on the surface of the P-N junction to be thinned, improving and optimizing the P-N junction, and improving the performance of the PERC cell. And recombination of diffused photoelectrons on the surface of the cell is effectively reduced. According to the manufacturing method, on the basis of the improved technology, secondary cleaning is carried out to remove the oxidation winding plating layer on the back face, the oxidation protection layer on the front face is reserved, and then the subsequent coating procedure and the subsequent electrode procedure are carried out. A diffusion oxide layer removing process is formed by firstly removing a PSG layer, then oxidizing and carrying out secondary cleaning, and finally, the photoelectric efficiency of the surface is improved. According to the secondary cleaning, not only is the oxidized winding plating layer on the back removed, but also the existing pollution of the battery piece can be cleaned before film coating, and the reworking procedure of the battery piece does not need to be additionally added.

The application relates to the technical field of semiconductor manufacturing, in particular to a photosensitive diode which comprises an intrinsic layer, an N-type doped layer, a P-type doped layer, a cutoff ring, a dielectric layer, an oxidation layer and an anti-reflection layer, the intrinsic layer has opposite lower and upper ends, the N-type doped layer is arranged at the lower end of the intrinsic layer, the P-type doped layer is arranged at the upper end of the intrinsic layer, the cutoff ring is arranged at the upper end of the intrinsic layer, the intrinsic layer exists between the cutoff ring and the P-type doped layer, the dielectric layer is arranged above the P-type doped layer, the oxidation layer is arranged above the intrinsic layer between the P-type doped layer and the cutoff ring, the anti-reflection layer covers the dielectric layer and the oxidation layer, and the dielectric layer is doped with P-type ions. The photosensitive diode arranged in the structure can effectively improve the short-wave response capability of the photosensitive diode, and the production cost is relatively low.

The embodiment of the present application provides an IBC battery aluminum paste and an IBC battery, wherein the IBC battery aluminum paste provided by the embodiment of the present application comprises an organic additive, boron powder, aluminum powder, gallium powder, glass powder and an organic binder. By adding gallium powder in the aluminum paste, because the gallium element has etching effect and high density, it is faster than aluminum to drop to the silicon surface in the sintering process, so that the Ga-Si contact probability is increased, the contact resistance of the paste and the battery is reduced, and a high open circuit voltage can be maintained. At the same time, because part of the aluminum powder is replaced by gallium, the content of aluminum is reduced, which is beneficial to reducing the side effect of Al, so that the Al-Si reaction is weakened, the formed aluminum silicon corrosion pit is shallow, the recombination is reduced, so as to improve the open circuit voltage and the photoelectric conversion efficiency of the battery. Therefore, the problem that the existing IBC battery aluminum paste is easy to form metal recombination in the cooling process after being sintered into a positive electrode grid line, resulting in the decrease of the open circuit voltage and the photoelectric conversion efficiency of the battery piece is solved.

The invention belongs to the photovoltaic field, and particularly relates to a perovskite precursor solution, a perovskite thin film, a perovskite solar cell and a preparation method. The perovskite precursor solution comprises a perovskite structure substance raw material, an organic additive and a solvent, the chemical formula of the organic additive is shown as a formula I; in the formula I, R1 is amino or acetamido, R2 is chlorine atom, and R3 is hydrogen atom, amino, acetamido, chlorine atom or hydroxyl. The chlorine atom, the pyridine ring and the acetamido (or amino) in the organic additive have a synergistic effect, so that the problems of uneven nucleation and multiple crystal defects of the perovskite thin film are solved, and the photovoltaic performance of the perovskite solar cell is further improved. # imgabs0 #

This invention discloses a glass powder for the main grid paste of TOPCon crystalline silicon solar cells and its preparation method. The glass powder is obtained by mixing glass frits A and B obtained after cold rolling at a mass ratio of 1.5 to 2:1, followed by secondary melting and cold rolling. Glass frit A includes PbO, SiO2, B2O3, Li2O, Na2O, etc., and glass frit B includes Bi2O3, SiO2, AgNO3, B2O3, Li2O, Na2O, etc. Distilled water is added to glass frit B during the batching process to fully combine AgNO3 with other oxides, and the mixture is dried to a viscous state before sintering. During the sintering process, laser-enhanced contact optimization technology is used to reduce AgO in the glass to silver microcrystals, thereby improving the electrical performance of the main grid lines. The printed solar cells exhibit reduced damp heat decay, resulting in high module reliability and improved photoelectric conversion efficiency while ensuring high welding tensile strength. The resulting glass powder does not excessively etch the silicon nitride and aluminum oxide passivation layers, and the prepared slurry can be sintered at 650-800℃, which can meet the requirements of the front and back main grid electrodes of TOPCon batteries.

The invention provides a preparation method of a tin-doped scaly nano gallium oxide thin film solar blind ultraviolet photoelectric detector. The preparation method comprises the following steps: carrying out cleaning pretreatment on a single crystal GaN substrate; depositing an Au thin film on the pretreated single crystal GaN substrate to serve as a catalyst layer; the preparation method comprises the following steps: mixing Ga2O3, diamond and SnO2 powder according to a certain mass ratio to prepare a precursor; putting the single crystal GaN substrate deposited with the Au thin film and a precursor into a CVD furnace, and growing according to preset gas flow, pressure intensity, reaction temperature and reaction time to obtain a tin-doped scaly nano gallium oxide thin film; and respectively preparing electrodes on the surface of the tin-doped scaly nano gallium oxide thin film and the surface of the GaN substrate by adopting a radio frequency magnetron sputtering method. The conductivity of the thin film is improved through tin doping, the specific surface area and light absorption are increased through the scaly nanostructure, high-performance deep ultraviolet photoelectric detection is achieved, and the technical problem that in the prior art, the dark current of a device is high is solved.

This application provides a solar cell and a method for fabricating the same. The solar cell includes: a substrate having a first surface, the first surface being located on the same side as the back surface of the solar cell, the solar cell including a first region and a second region on the back surface; a tunneling oxide layer disposed on one side of the first surface; a first doped layer disposed on one side of the first surface and located within the second region, and on the surface of the tunneling oxide layer facing away from the substrate, the first doped layer having a first doping concentration; a second doped layer disposed on the side of the first doped layer away from the first surface and located within the second region, the second doped layer having a second doping concentration lower than the first doping concentration; and a third doped layer disposed on one side of the first surface, the third doped layer having a third doping concentration higher than the first doping concentration. This application can reduce parasitic absorption of light, facilitate ion transport, and further improve cell performance.

The present invention discloses a dye-sensitive solar cell based on a composite structure photoanode and a preparation method and application thereof. The preparation method of the dye-sensitive solar cell comprises the following steps: S1: preparing an Au / SnS / TiO2 composite structure photoanode; S2: preparing an I-rich ‑ and I3 ‑ electrolyte; S3: prepare natural dye blueberry juice; S4: prepare graphite counter electrode; S5: assemble Au / SnS / TiO2 composite structure photoanode, electrolyte, natural dye and counter electrode into dye-sensitive solar cell. The dye-sensitive solar cell prepared by the Au / SnS / TiO2 composite structure photoanode and natural dye by spin coating and high-temperature calcination in the present invention has good photoelectric conversion efficiency and stability. It is applied to the sunroof of electric vehicles, which can not only retain the original function of the sunroof of the car, but also generate electricity to charge the car, greatly saving the original charging time and charging cost of the electric car, and also eliminating the trouble of queuing to use the charging pile.

The utility model discloses an N-type high-efficiency battery and a battery assembly. The N-type high-efficiency battery comprises an N-type silicon substrate, and a front tunneling layer, a doped crystalline silicon layer and a front antireflection function layer which are sequentially arranged on the front surface of the N-type silicon substrate, the doped crystalline silicon layer at least comprises a first doped crystalline silicon layer, a second doped crystalline silicon layer and a third doped crystalline silicon layer which are sequentially arranged in the direction far away from the front surface of the N-type silicon substrate; the doping concentration of the first doped crystalline silicon layer is larger than that of the N-type silicon substrate. The doping concentration of the first doped crystalline silicon layer and the doping concentration of the third doped crystalline silicon layer are both larger than or smaller than the doping concentration of the second doped crystalline silicon layer. The front side of the N-type high-efficiency battery adopts the structure that the front side tunneling layer is matched with the multi-layer doped crystalline silicon layer with specific concentration change, so that light parasitic absorption can be reduced, the composite loss can be reduced, the resistivity can be reduced, and the comprehensive performance of the N-type high-efficiency battery can be improved.

The present application relates to a passivation film, a method for preparing the passivation film, and a solar cell. The passivation film includes two passivation layers. The first passivation layer is arranged on the surface of the substrate, and the second passivation layer is arranged on the surface of the first passivation layer away from the substrate. The field passivation effect of the first passivation layer is better than the field passivation effect of the second passivation layer, that is, the field passivation effect of the film layer close to the substrate is better than the field passivation effect of the top, which can prevent charge carriers of similar polarity from approaching the substrate, greatly reduce the number of carriers of one polarity reaching the surface, and significantly reduce the recombination loss on the substrate surface. The chemical passivation effect of the second passivation layer is better than the first passivation effect. The chemical passivation effect of the upper surface film layer of the outermost layer of the passivation film is the best, so that the atoms have enough time and energy to reach the optimal energy level, thereby saturating the surface dangling bonds, reducing their recombination effect on other positive and negative charges, and ensuring the passivation effect of the passivation film. That is, the passivation film in the present application can take into account both the field passivation effect and the chemical passivation effect.

The present application provides a back-contact solar cell and photovoltaic module, belonging to the field of solar cell technology. The back-contact solar cell includes a silicon wafer, and an electrode collection area is formed on the back of the silicon wafer. The electrode collection area includes a plurality of first polarity carrier collection areas and a plurality of second polarity carrier collection areas of opposite polarities that are alternately distributed along a first direction, and an isolation area is provided between adjacent first polarity carrier collection areas and second polarity carrier collection areas; wherein, the width of at least one of the two edge carrier collection areas adjacent to the edge of the silicon wafer along the first direction is greater than the width of any inner carrier collection area of ​​the same polarity away from the edge of the silicon wafer. The present application promotes carrier collection in the edge area of ​​the silicon wafer by controlling the width of the edge carrier collection area to be greater than the width of the inner carrier collection area of ​​the same polarity, and adjusting the position of the metal electrode of the edge carrier collection area, which is beneficial to improving the photoelectric conversion efficiency of the battery.

The invention discloses a photocatalytic material with a heptazine-triazine structure as well as a preparation method and application of the photocatalytic material. Relates to the field of photocatalysis. The photocatalytic material with the heptazine-triazine structure comprises a boron-doped heptazine-triazine heterojunction structure, and the content of a triazine unit in the heptazine-triazine heterojunction structure is higher than that of a heptazine unit; the raw material of the boron-doped heptazine-triazine heterojunction structure comprises the following components: a boron-containing carbon nitride precursor and alkali metal salt, the raw materials of the boron-containing carbon nitride precursor comprise melamine and a boron source. The photocatalytic material shows excellent performance under visible light, the H2O2 yield can reach 2423 mol L <-1 > h <-1 > (44.1 times of that of traditional carbon nitride), and the hydrogen evolution rate is increased by 70 times; the apparent quantum yield of 450nm single wavelength reaches 14.4%, and the visible light absorption range is effectively expanded; and after continuous 24-hour illumination, the activity is not attenuated, and the stability is excellent.

The invention provides a method for removing tetravalent tin on the surface of stannous niobate through a reduction method and application, and relates to the technical field of photocatalysis and photoelectrocatalysis. The method comprises the following steps: infiltrating a stannous niobate electrode material in an electrolyte solution, so that the surface of stannous niobate is in full contact with the electrolyte solution; bias voltage is applied to the stannous niobate electrode material, so that the tetravalent tin on the surface of the stannous niobate is subjected to reduction reaction to be removed, and the charge shielding layer formed on the surface of the stannous niobate by the tetravalent tin is removed. By adopting the technical scheme, the reduction dissolution of tetravalent tin on the surface of stannous niobate is effectively regulated and controlled by controlling the composition of the electrolyte solution and applying the bias voltage, so that the problem of relatively low photovoltage caused by Fermi level pinning due to the existence of the tetravalent tin is solved, the recombination of charges at tetravalent tin sites is also reduced, and the photoelectric conversion efficiency is improved. Therefore, the purpose of cleaning the surface and restoring the surface to the initial state is achieved.

The present invention provides a D-π-A type molecule with benzotricarbazole as a donor, and also provides a D-π-A type molecule with benzotricarbazole as a donor as a passivator for use in the passivation of perovskite film defects, wherein the carboxyl group thereon can interact with lead ions, thereby passivating the unbonded lead ions in the lattice and reducing the recombination of photogenerated carriers. Moreover, the photosensitive dye itself contains a large conjugated system, which is beneficial to the transmission of photogenerated carriers in the perovskite, thereby improving the photoelectric conversion efficiency of the device. In addition, the deprotonation of the carboxyl group thereon can passivate the methylamine defects in the perovskite film, and the more alkyl chains in the molecule also improve the hydrophobicity of the perovskite film, effectively improving the water-oxygen stability of the battery. After passivation, the various photoelectric properties of the device are significantly improved, and the photoelectric conversion efficiency (PCE) is increased from 17.31% to 19.84%.

The application discloses a kind of adjustable defect sub-nanometer gold load nickel iron composite photoanode catalyst, preparation method and application, deionized water is introduced into nitrogen and is deoxidized, multi-walled carbon nanotube treated by strong acid is placed in deionized water after deoxidation, after ultrasonic dispersion is uniform, together with FeCl2, NiCl2, HMT and ammonium fluoride is added into reaction kettle, reaction is carried out at 120 DEG C for 6 hours, after cooling, it is taken out, using deionized water is filtered, washed after, HAuCl4 is quickly added, sealed and is stirred in dark room, after reaction is finished, it is filtered, washed, nitrogen is dried at room temperature and is preserved in oxygen-free atmosphere.The application is synthesized Au / NiFe (hydroxyl) oxide / CNT composite catalyst by in-situ oxidation technology one step.The method can be simultaneously controlled on the basis of heterojunction Defects, the synergistic effect of both makes the catalyst performance be further optimized.Synthesis method is simple and direct, and catalytic effect is obviously improved.

The application discloses a passivation method of a TOPCon cell, which comprises the following steps: providing a TOPCon cell; the TOPCon cell comprises an N-type silicon substrate, the N-type silicon substrate comprises opposite front and back surfaces; the front surface comprises a first electrode, and the back surface comprises a second electrode; cutting at a reserved cutting position of the TOPCon cell by using a preset cutting process to form a TOPCon half cell; sequentially forming a first passivation layer, a second passivation layer and a barrier layer on a side of the cutting surface surface in a direction outward from the N-type silicon substrate to obtain a laminated passivation structure; the edge of the laminated passivation structure is not in contact with the first electrode and the second electrode; and performing low-temperature annealing on the TOPCon half cell with the laminated passivation structure. By using the method, the interface tunneling, gradient hydrogen passivation and field effect synergistic effect are realized, the carrier recombination of the laser cutting side surface is reduced, and the barrier layer effectively blocks the water and oxygen erosion.

This invention discloses a self-cleaning and dust-resistant polyurethane synthetic leather and its preparation method, belonging to the field of polyurethane technology. The self-cleaning and dust-resistant polyurethane synthetic leather comprises an isocyanate-terminated polyurethane prepolymer, an N-doped titanium dioxide photocatalyst, a polyether / siloxane hybrid phosphate modifier, and various additives. This invention enhances the intrinsic photocatalytic activity of TiO2 through N-doping without altering its crystal structure. A self-designed hybrid phosphate modifier achieves N-TiO2 chemical anchoring and surface-oriented enrichment, significantly improving the utilization rate of active sites and achieving TiO2 reduction without sacrificing efficiency. Simultaneously, a dust-resistant, antistatic, and self-cleaning synergistic system is constructed to maintain long-term self-cleaning properties, while simultaneously optimizing the mechanical and weather-resistant properties of the synthetic leather. It is compatible with existing mass production processes and has significant industrialization value.