202results about How to "Reduce compounding" patented technology

The invention discloses a solar cell and a preparation method and application thereof, and relates to the technical field of solar cells. P-type doped regions and N-type doped regions are alternately arranged on the back surface of the crystalline silicon substrate, a boron diffusion doped layer, a first passivation layer and a first antireflection layer are sequentially arranged in the P-type doped regions, and a phosphorus-doped silicon oxide layer, a phosphorus-doped polycrystalline silicon layer, a second passivation layer and a second antireflection layer are sequentially arranged in the N-type doped regions from the surface of the crystalline silicon substrate. A traditional TBC battery P region mostly adopts a two-step process of intrinsic amorphous silicon deposition and boron diffusion to form a polycrystalline silicon layer, but the P region does not contain the polycrystalline silicon layer and can be prepared through a one-step boron diffusion process, so that the process steps can be reduced, and the process time can be shortened; and the action of laser and P-region polycrystalline silicon is avoided, the patterning difficulty of the battery is reduced, and the production yield of the battery can be greatly improved.

The invention relates to the field of solar cells, and discloses a solar cell, a preparation method thereof and a photovoltaic module. The first semiconductor layer and the second semiconductor layer are arranged on the silicon substrate, the first semiconductor layer is doped with N-type conductive elements, and the second semiconductor layer is doped with P-type conductive elements; the first electrode is electrically connected with the first semiconductor layer through a plurality of first conductive structures; the second electrode is electrically connected with the second semiconductor layer through a plurality of second conductive structures; wherein the density of the first conductive structure is greater than that of the second conductive structure. According to the solar cell, the carrier transmission efficiency can be improved, recombination is reduced, and scattering is reduced.

The invention provides front fine grid silver paste for an N-type TOPCON battery and the battery. The silver paste is applied to an LECO treatment process. The polymer nano-silver solution in the silver paste improves the contact performance in the N-type TOPCON laser-assisted sintering process, reduces recombination, and improves open-circuit voltage and short-circuit current. Compared with micron-sized glass powder, the nano glass powder in the silver paste has the advantages that the single-point etching area is reduced, the etching distribution density is increased, the contact resistance is ultralow, meanwhile, the open-circuit voltage can be effectively improved due to the fact that the etching depth becomes shallow and the metal recombination is low, and the purpose of improving the efficiency is achieved. The problem that in the process of preparing the N-type TOPCON battery through the LECO technology, the speed that silver atoms diffuse into the surface of a silicon wafer is low, the open-circuit voltage and the short-circuit current are affected, and consequently the photoelectric conversion efficiency is low is solved. The invention further provides a battery, the battery is prepared through the LECO technology, and raw materials comprise the silver paste for the N-type TOPCon battery.

The utility model relates to the technical field of solar cells, in particular to a solar cell, a photovoltaic module and a photovoltaic system. The potential risk that high-temperature slurry is sintered and diffused into a tunneling oxide layer is reduced while parasitic absorption of a doped polycrystalline silicon layer is reduced, and non-radiative recombination is reduced. A solar cell comprises a silicon substrate layer which comprises a first surface and a second surface which are oppositely arranged; the tunneling oxide layer is arranged on the first surface of the silicon substrate layer; the doped polycrystalline silicon layer is arranged on one side, far away from the silicon substrate layer, of the tunneling oxide layer; the doped polycrystalline silicon layer comprises a first sub-layer and a second sub-layer which are sequentially stacked in the direction gradually away from the silicon substrate layer; and a gate line electrode pattern; wherein the first sub-layer is further doped with a carbon element, and ohmic contact is formed between the grid line electrode pattern and the second sub-layer.

The embodiment of the invention relates to the photovoltaic field, and provides a solar cell piece and a photovoltaic module, and the solar cell piece comprises a substrate which comprises a front surface and a back surface which are opposite to each other, and the substrate comprises metal regions and non-metal regions which are alternately arranged; the tunneling oxide layer at least covers the non-metal region on the front side; the first doped conductive layer is located on the metal region on the front side, the first doped conductive layer is doped with a first doped element and a second doped element, the first doped element is a metal element, and the second doped element is a non-metal element; the second doped conductive layer is located on the surface of the tunneling oxide layer and the surface of the first doped conductive layer, and the second doped conductive layer is doped with a first doping element; the passivation layer is located on the surface of the second doped conductive layer; the electrode penetrates through the passivation layer, and at least part of the electrode further penetrates through the second doped conductive layer to be in contact connection with the first doped conductive layer. And the photoelectric conversion efficiency of the photovoltaic cell can be improved.

The invention relates to the technical field of solar cells, in particular to a film layer structure for improving UV attenuation of a TOPcon cell. In order to improve the passivation effect of the front face of the TOPCon cell, an aluminum oxide passivation layer is generally arranged on the surface of a BSG layer on the front face of the TOPCon cell, but the aluminum oxide passivation layer is poor in ultraviolet resistance and prone to being damaged by ultraviolet light, and then the service life of the cell is affected. Aiming at the problem, the invention provides the film layer structure for improving UV attenuation of the TOPcon battery, the second silicon oxide layer and the first silicon oxide layer are respectively arranged above and below the aluminum oxide layer, and the silicon nitride layer is arranged on the surface of the second silicon oxide layer, so that the passivation effect of the front surface of the obtained TOPcon battery is remarkably improved, the attenuation speed of the battery is effectively reduced, and the service life of the battery is prolonged. And the service life of the battery is prolonged.

The invention relates to a manufacturing method of a solar cell and the solar cell, the back surface of the solar cell is provided with a first region and a second region, and a second electrode of the solar cell is arranged in the second region; the manufacturing method of the solar cell comprises the following steps: texturing a cell piece; carrying out boron diffusion on the battery piece; performing laser etching on the first region; the first area is subjected to groove type cleaning; and carrying out chain type cleaning on the second area. In the invention, the back surface of the battery piece is selectively etched through laser to remove the borosilicate glass layer in the first area and reserve the borosilicate glass layer in the second area, so that the first area of the battery piece is cleaned and polished in the subsequent preparation steps; the borosilicate glass layer of the second region protects the textured structure of the second region in the subsequent preparation step, so that the tunneling dielectric layer and the doped conductive layer in the second region also have textured structures, thereby increasing the contact area between the second electrode and the doped conductive layer, and improving the photoelectric conversion efficiency of the solar cell.

The invention relates to the technical field of solar cells, in particular to a perovskite solar cell, a preparation method thereof and a photovoltaic module. The invention aims to solve the problem that the cell performance is influenced by non-uniform coverage of the perovskite layer on the hole transport layer. For the purpose, the preparation method of the perovskite solar cell comprises the steps of preparing a hole transport layer on a substrate, preparing an interface modification layer on the hole transport layer, preparing a perovskite layer on the interface modification layer, and sequentially preparing an electron transport layer and an electrode on the perovskite layer to obtain the perovskite cell, the wettability of the hole transport layer can be improved by introducing 3-hydroxyphenylboronic acid into the adjacent interface of the perovskite layer and the hole transport layer, so that the coverage rate of the perovskite layer is increased, meanwhile, the 3-hydroxyphenylboronic acid is coordinated with metal ions in the perovskite layer, non-radiative recombination between the hole transport layer and the perovskite layer interface can be reduced, and the hole transport efficiency is improved. And the carrier transmission efficiency is improved.

The invention provides a method for preparing a passivation contact region based on an ion implantation technology, which comprises the following steps of: fully crystallizing polycrystalline silicon subjected to chemical vapor deposition, doping the polycrystalline silicon through ion implantation of boron or phosphorus, and activating doped atoms of the implanted boron or phosphorus by adopting rapid heat treatment to obtain the passivation contact region. And the doped boron or phosphorus is controlled to enter the silicon substrate less. According to the method, a boron or phosphorus doping distribution curve close to an ideal design passivation contact region can be obtained by combining boron or phosphorus ion implantation and a rapid heat treatment technology, so that a high-quality hole passivation contact region and an electron passivation contact region can be obtained. On the basis, the invention also discloses a method for preparing the passivated contact battery by adopting the method and the correspondingly obtained passivated contact battery.

The invention relates to the technical field of photovoltaic cells, and discloses a back contact solar cell and a preparation method thereof. The preparation method comprises the following steps: providing a substrate layer of a first conductive type having a first surface and a second surface opposite to each other; a first groove is formed in the first surface, and a bulge is formed beside the first groove; performing doping treatment on the inner wall surface of the first groove to form a first doping layer; the first doped layer is of a second conductive type; forming a passivation layer on the surface of the first doping layer; a second groove isolated from the first groove is formed in the protrusion; forming a first tunneling oxide layer on the second groove; forming a second doping layer of the first conduction type in the second groove and on the first tunneling oxide layer; a first electrode and a second electrode are formed, the first electrode penetrates through the passivation layer to be connected with the first doping layer, and the second electrode is connected with the second doping layer. The first groove and the second groove which are relatively isolated are formed by grooving at different positions of the substrate layer, so that efficient current collection is facilitated, short circuit is prevented, and the photoelectric conversion efficiency and the power generation efficiency are improved.

The invention relates to a TBC battery and a preparation method thereof. The preparation method comprises the following steps: S1, forming a dielectric region and a polycrystalline silicon layer; s2, forming a dopant source layer of the first conductive type impurities; s3, opening the film and cleaning; s4, one-step co-doping of impurities of different conductive types; the thickness of the dopant source layer of the first conductive type impurities is 10 nm to 100 nm. According to the invention, the dopant source layer of the first conductive type impurities is formed firstly, so that the high-temperature doping times, the cleaning times and the film opening times are reduced, the doping temperature is reduced, the process time is shortened, the process flow is simplified, the equipment investment cost is reduced, and the internal composite action of the cell is reduced, thereby improving the photoelectric conversion efficiency.

The invention discloses a method for improving the efficiency of a perovskite solar cell, and belongs to the technical field of solar cells. The insulating spacer film prepared between the electron transport layer and the perovskite layer of the perovskite solar cell by adopting the electron beam evaporation method has high uniformity, the cell interface structure can be optimized, defects are reduced, charge recombination loss is reduced, and the photoelectric conversion efficiency and stability are effectively improved. The insulating spacer layer not only can block external moisture and pollutants, reduce direct contact between the perovskite layer and the electron transport layer and prolong the service life of the cell, but also can inhibit internal ion migration and slow down performance degradation. By accurately regulating and controlling the thickness of the insulating spacer layer, charge transmission optimization and compound loss minimization are realized. An innovative technical path is provided for research and development of efficient and stable perovskite solar cells, and further development of the solar cell technology is expected to be promoted.

The invention discloses a preparation method of a Fe-doped Bi2O2CO3 / Bi4TaO8Cl composite photocatalyst as well as a product and application of the Fe-doped Bi2O2CO3 / Bi4TaO8Cl composite photocatalyst and belongs to the technical field of photocatalysis. Bi4TaO8Cl, urea and Fe3Cl. 6H2O are subjected to hydrothermal reaction to synthesize the Fe-doped Bi2O2CO3 / Bi4TaO8Cl composite photocatalyst, separation and transfer of photo-generated charges are accelerated, the carrier separation efficiency is improved, meanwhile, the visible light absorption efficiency is effectively improved through Fe doping, and the visible light absorption efficiency is improved. According to the present invention, the active free radical ROS is selectively generated, such that the ability of the photocatalytic degradation of NO to NO3 <-> is further improved while the conversion of NO to nitrogen dioxide NO2 is well inhibited, the performance is excellent, and the NO harmful gas can be efficiently degraded.

The invention relates to the technical field of perovskite solar cell preparation, in particular to a bulk phase passivation perovskite light absorption layer, a solar cell and a preparation method, the bulk phase passivation perovskite light absorption layer is prepared by adopting a perovskite layer prefabricated liquid, the perovskite layer prefabricated liquid comprises (FA 0.95 MA0.05) 0.95 Cs0.05 Pb (I 0.95 Br0.05) 3 and m-F-PEACl, the molar concentration ratio of the (FA 0.95 MA0.05) 0.95 Cs0.05 Pb (I 0.95 Br0.05) 3 to the m-F-PEACl is 1.5: (0.1-1), m-F-PEACl and (FA < 0.95 > MA0. 05) < 0.95 > Cs0. 05Pb (I < 0.95 > Br0. 05) 3 are matched to form a bulk phase passivated perovskite layer, so that organic cations in the m-F-PEACl interact with uncoordinated lead ions or other defect sites in the (FA < 0.95 > MA0. 05) < 0.95 > Cs0. 05Pb (I < 0.95 > Br0. 05) 3 to form a stable complex or compound, the defect concentration in perovskite is reduced, comprehensive and effective passivation is realized, and the performance of the perovskite is improved. Therefore, the photoelectric property and the stability of the perovskite material are improved. The problem that comprehensive and effective passivation cannot be achieved through a perovskite thin film passivation method in the prior art is solved.

The invention provides a gallium oxide ultraviolet detector based on a difunctional self-assembly passivation layer and a preparation method thereof, the gallium oxide ultraviolet detector comprises a substrate layer, an oxidant layer and the difunctional self-assembly passivation layer which are arranged from bottom to top, and two sides of the difunctional self-assembly passivation layer are provided with metal electrodes in contact with a gallium oxide layer. Wherein the bifunctional self-assembly passivation layer comprises a first passivation layer and a second passivation layer which are arranged from bottom to top, the passivation material of the first passivation layer is a material for reducing surface defects of the gallium oxide layer, and the passivation material of the second passivation layer is a material for enhancing the ultraviolet photon absorption rate. Passivation materials with different functions are combined to form the dual-function self-assembly passivation layer, and the dual-function self-assembly passivation layer is adopted to perform passivation treatment on the gallium oxide ultraviolet detector, so that the performance of the gallium oxide ultraviolet detector is jointly improved from two aspects of reducing surface defects of gallium oxide and enhancing ultraviolet photon absorption.

The invention relates to a perovskite solar cell and a preparation method thereof, and belongs to the technical field of solar cells. The perovskite solar cell comprises a conductive substrate, a hole transport layer, a passivation layer, a perovskite layer, an electron transport layer and a metal electrode which are arranged in sequence, the material of the passivation layer is selected from one or more of mercaptoethylamine, ethylenediamine and propylamine; and the thickness of the passivation layer is 1 nm to 10 nm. Through the introduction of interface passivator molecules, the interface between the hole transport layer and the perovskite layer is improved. The surface wettability of the PTAA thin film is enhanced, so that the perovskite precursor solution can form a uniform and compact perovskite layer on the PTAA / SCAs thin film, the carrier separation and transmission efficiency at an interface is improved, and the stability of a device is enhanced.

The invention discloses a solar single-crystal efficient TOPCon + SE battery piece ultrahigh sheet resistance diffusion process which mainly comprises a front boron process, an SE process and a rear oxidation process, and the front boron process comprises high-temperature oxidation before diffusion and a diffusion process composed of three-step diffusion and heating propulsion. According to the invention, a layer of SiO2 can be coated on the surface of the silicon wafer through high-temperature oxidation before diffusion and is used as an anti-reflection film layer; the PN junction is prepared by adopting a step-by-step diffusion method, so that the advantage of good junction uniformity can be realized, boron can be uniformly distributed on the surface of a silicon wafer through a specific boron diffusion method, and meanwhile, boron elements can be better deposited on the surface of the silicon wafer through variable-temperature diffusion and propulsion; by adding the SE process, the square resistance can reach 700-800 ohms, the junction depth in the grid line area is deeper, the increase of ohms becomes better, the cell center recombination is reduced due to the lower surface concentration, and the open-circuit voltage of the cell is improved; and the post-oxidation process has an annealing effect and can repair lattice damage and the like.

The invention relates to a cadmium telluride solar cell and a preparation method thereof, the cadmium telluride solar cell comprises a TCO layer, a buffer layer, a window layer, a light absorption layer, a back electrode layer and a back contact layer, the back contact layer is located between the light absorption layer and the back electrode layer, and the back contact layer is made of boron or carbon doped transition metal nitride. The back contact layer made of boron or carbon doped transition metal nitride is introduced between the light absorption layer and the back electrode layer, and transition gold elements in the back contact layer can be compatible with the cadmium telluride absorption layer, so that the obstruction of a contact barrier to hole transport is reduced, the interface characteristic between the CdTe absorption layer and the back contact layer is optimized, and the light emitting efficiency is improved. According to the present invention, the cadmium telluride absorption layer can form the good ohmic contact with the cadmium telluride absorption layer, such that the effect of the back field buffer layer can be provided so as to reflect the photo-induced electrons on the back surface in the cadmium telluride to the PN junction, such that the recombination of the electrons on the back surface can be substantially reduced, and the carrier collection efficiency of the cell can be improved so as to improve the open-circuit voltage and the conversion efficiency of the cell;

The invention discloses high-performance silver paste added with nano silver oxide and a preparation method of the high-performance silver paste. The high-performance silver paste comprises the following components: an organic carrier, glass powder, silver powder and an additive, the organic carrier comprises a volatile solvent and non-volatile resin; the non-volatile resin comprises ethyl cellulose, nitrocellulose, acrylic resin, polyamide wax resin and hydrogenated castor oil; the volatile solvent comprises texanol, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetate, tributyl citrate, dimethyl oxalate and dimethyl silicone oil; the additive adopts nano silver oxide. The invention relates to the technical field of solar cells. Compared with silver powder, the nano silver oxide is smaller in particle size, large in specific surface area and low in tap density, the viscosity can be improved when the nano silver oxide is added into the paste, the height-width ratio of a printing grid line electrode can be improved, the shading area can be reduced, the current of a battery piece can be improved, and the photoelectric conversion efficiency of the battery piece can be improved.

The invention relates to a perovskite thin film, a passivation method and application, belongs to the technical field of photoelectric functional materials and devices, and aims to solve the problems of low efficiency, poor stability and the like of a solar cell caused by perovskite crystal defects in the prior art. The perovskite thin film passivation method comprises the following steps: adding 1, 4-butane sultone into a perovskite precursor solution to obtain a mixed solution, processing the mixed solution to form a perovskite precursor thin film, and carrying out annealing treatment to obtain the perovskite thin film. By adding BuSO, the nucleation rate of perovskite can be effectively reduced, so that the large-grain and high-quality perovskite thin film is obtained, the BuSO can be subjected to halogen ion induced ring-opening reaction in the annealing process, generated chain ions are distributed on the grain boundary and the surface and act with perovskite, compounding of a bulk phase and an interface is reduced, and the performance of the perovskite thin film is improved. And the efficiency and the long-term stability of the solar cell are effectively improved.

The invention provides a substrate whole plate engineering glass crushing system which comprises a main frame body, a mounting frame is fixedly mounted in the main frame body, a material guiding mechanism is assembled at the top of the mounting frame, a crushing mechanism is assembled on the mounting frame on one side of the material guiding mechanism, a transfer groove for receiving materials is formed in the mounting frame, and the transfer groove is formed in the mounting frame. A guide opening is formed in the top of the main frame body, a material taking mechanism penetrating through the guide opening is slidably mounted at the top of the main frame body, an extraction mechanism penetrating through the guide opening is assembled at the top of the main frame body, and the working end of the extraction mechanism extends into the main frame body. Through mutual cooperation between the overturning assembly and the placing assembly, mutual connection between the overturning assembly and the placing assembly is achieved, the overturning assembly and the placing assembly can be rapidly switched to the feeding state to wait for feeding, it is guaranteed that subsequent assemblies are rapidly extracted, workers only need to move the placing assembly to the extracting position, manual feeding and feeding are not needed, and the labor intensity of workers is reduced. And safe operation of the engineering glass recycling device is ensured.

The invention discloses a carbon nitride loaded metal diatom photocatalytic material as well as a preparation method and application thereof. The invention belongs to the field of photocatalytic materials. The invention aims to solve the technical problems of complex preparation process and low photocatalytic efficiency of the existing metal diatom photocatalyst. The method comprises the following steps: dissolving a nitrogen source and a phosphorus source in deionized water, and carrying out hydrothermal reaction to obtain a precursor; dissolving the precursor in a mixed solvent of alcohol, and then refluxing at constant temperature for a certain time to obtain a pre-product; and adding a metal compound solution capable of forming a conjugated system into the pre-product, carrying out ultrasonic treatment, heating in a constant-temperature water bath kettle, and calcining to obtain the carbon nitride loaded metal diatom photocatalytic material. The obtained photocatalytic material has the advantages of high visible light utilization rate, low photo-induced electron-hole recombination rate and high electron transfer rate. The method is used in the fields of photocatalytic hydrogen production, carbon dioxide reduction and organic matter oxidation.

The invention discloses an MXene quantum dot tip heterojunction material with high photothermal conversion efficiency. The MXene quantum dot tip heterojunction material comprises a substrate and a Co3O4 nanoneedle array structure grown on the substrate in situ, ti3C2MXene quantum dots are loaded on the surface of the Co3O4 nanoneedle, and the Ti3C2MXene quantum dots are fixed on the surface of the Co3O4 nanoneedle through the interaction force of heterogeneous charges. The invention also discloses a preparation method of the MXene quantum dot tip heterojunction material. The preparation method comprises the following steps: (1) preparing a Co3O4 nanoneedle structure arranged in an array on a substrate by using a hydrothermal method; and (2) under the irradiation of an ultraviolet lamp, putting the product in the step (1) into an MXene quantum dot solution, and soaking for 6-8 hours.

The invention discloses a preparation method of a crystalline silicon solar cell. The preparation method comprises the following steps: arranging a function adjusting layer on and / or in a passivation dielectric layer; electrode slurry is printed on the passivation dielectric layer and corresponds to the position of the function adjusting layer; sintering to form a metal electrode; the function adjusting layer comprises at least one of compounds containing specific cations, the compounds containing the specific cations can release the specific cations at the sintering temperature, and the specific cations are cations corresponding to elements involved in the glass network formation. According to the preparation method, minority carrier recombination can be effectively reduced, the passivation effect of the battery is improved, and the conductivity of the metal electrode is effectively improved.

The invention provides a defluorination method and a film deposition method for recovering the first round efficiency of a graphite boat. The defluorination method comprises plasma bombardment defluorination and / or high-temperature nitrogen purging defluorination. According to the defluorination method, washing and drying are not needed, efficient defluorination is achieved, meanwhile, the time cost is reduced, use of special gas is reduced, the production cost is saved, and large-scale application and popularization are facilitated.

The invention relates to a back passivation structure capable of reducing phosphorus internal expansion. The back passivation structure comprises an N-type crystal silicon wafer, and a tunneling oxide layer, an intrinsic amorphous silicon layer, a silicon oxynitride layer and a phosphorus-doped polycrystalline silicon layer which are sequentially arranged on the back surface of the N-type crystal silicon wafer. According to the back passivation structure capable of reducing phosphorus internal expansion, in the preparation process, P atoms can be diffused towards the silicon substrate after high-temperature crystallization, the silicon oxynitride layer serves as a first barrier layer, silicon oxynitride has higher barrier efficiency on the P atoms compared with silicon oxide, most of the P atoms can be effectively blocked, and the performance of the silicon oxynitride layer is improved. The intrinsic amorphous silicon layer serves as a second barrier layer, P atoms which are not blocked by the silicon oxynitride layer can be subjected to P doping with intrinsic amorphous silicon and are converted into doped polycrystalline silicon with low P concentration, and the tunneling oxide layer serves as the last barrier layer to further block the P atoms, so that the P atoms can be effectively prevented from being internally expanded to a crystalline silicon substrate, surface recombination is reduced, and the performance of the crystalline silicon is improved. Therefore, the cell conversion efficiency is improved.

The invention relates to the technical field of air purification materials, and provides a metal-CNTs-TiO2 composite material which has a special structure, TiO2 is deposited in a carbon nanotube, noble metal is deposited on the surface of the carbon nanotube, and the structure has the advantages of high catalytic efficiency and the like when harmful substances such as formaldehyde in air are catalytically decomposed. The invention further provides a preparation method of the metal-CNTs-TiO2 composite material, the metal-CNTs-TiO2 composite material can be obtained through the method, the method is simple and convenient, and industrial production is easy to achieve.

A solar cell comprises a silicon substrate, a PN junction and a back electrode, wherein the PN junction and the back electrode are located on the back face of the silicon substrate. The front surface of the silicon substrate is provided with a grid line area and a non-grid line area, and the solar cell further comprises a front tunneling layer, a front doped polycrystalline silicon layer and a front electrode which are only positioned in the grid line area. According to the solar cell provided by the utility model, the front tunneling layer and the front doped polycrystalline silicon layer are arranged in the grid line area of the front to form a patterned front passivation contact structure, so that the direct contact between the front electrode and the silicon substrate is avoided, and the under-metal recombination of the front is reduced, thereby improving the cell efficiency and improving the product competitiveness.

The invention provides an improvement process of a solar cell P-N junction, a PERC cell and a manufacturing method of the PERC cell, and the improvement process comprises the steps: firstly removing a PSG layer after a silicon wafer is used for manufacturing a selective emitter, and then carrying out the oxidation growth of an oxidation protection layer, thereby enabling a dead layer on the surface of the P-N junction to be thinned, improving and optimizing the P-N junction, and improving the performance of the PERC cell. And recombination of diffused photoelectrons on the surface of the cell is effectively reduced. According to the manufacturing method, on the basis of the improved technology, secondary cleaning is carried out to remove the oxidation winding plating layer on the back face, the oxidation protection layer on the front face is reserved, and then the subsequent coating procedure and the subsequent electrode procedure are carried out. A diffusion oxide layer removing process is formed by firstly removing a PSG layer, then oxidizing and carrying out secondary cleaning, and finally, the photoelectric efficiency of the surface is improved. According to the secondary cleaning, not only is the oxidized winding plating layer on the back removed, but also the existing pollution of the battery piece can be cleaned before film coating, and the reworking procedure of the battery piece does not need to be additionally added.

The application relates to the technical field of semiconductor manufacturing, in particular to a photosensitive diode which comprises an intrinsic layer, an N-type doped layer, a P-type doped layer, a cutoff ring, a dielectric layer, an oxidation layer and an anti-reflection layer, the intrinsic layer has opposite lower and upper ends, the N-type doped layer is arranged at the lower end of the intrinsic layer, the P-type doped layer is arranged at the upper end of the intrinsic layer, the cutoff ring is arranged at the upper end of the intrinsic layer, the intrinsic layer exists between the cutoff ring and the P-type doped layer, the dielectric layer is arranged above the P-type doped layer, the oxidation layer is arranged above the intrinsic layer between the P-type doped layer and the cutoff ring, the anti-reflection layer covers the dielectric layer and the oxidation layer, and the dielectric layer is doped with P-type ions. The photosensitive diode arranged in the structure can effectively improve the short-wave response capability of the photosensitive diode, and the production cost is relatively low.