9results about How to "Reduce compounding" patented technology

The embodiment of the present application provides an IBC battery aluminum paste and an IBC battery, wherein the IBC battery aluminum paste provided by the embodiment of the present application comprises an organic additive, boron powder, aluminum powder, gallium powder, glass powder and an organic binder. By adding gallium powder in the aluminum paste, because the gallium element has etching effect and high density, it is faster than aluminum to drop to the silicon surface in the sintering process, so that the Ga-Si contact probability is increased, the contact resistance of the paste and the battery is reduced, and a high open circuit voltage can be maintained. At the same time, because part of the aluminum powder is replaced by gallium, the content of aluminum is reduced, which is beneficial to reducing the side effect of Al, so that the Al-Si reaction is weakened, the formed aluminum silicon corrosion pit is shallow, the recombination is reduced, so as to improve the open circuit voltage and the photoelectric conversion efficiency of the battery. Therefore, the problem that the existing IBC battery aluminum paste is easy to form metal recombination in the cooling process after being sintered into a positive electrode grid line, resulting in the decrease of the open circuit voltage and the photoelectric conversion efficiency of the battery piece is solved.

This application provides a solar cell and a method for fabricating the same. The solar cell includes: a substrate having a first surface, the first surface being located on the same side as the back surface of the solar cell, the solar cell including a first region and a second region on the back surface; a tunneling oxide layer disposed on one side of the first surface; a first doped layer disposed on one side of the first surface and located within the second region, and on the surface of the tunneling oxide layer facing away from the substrate, the first doped layer having a first doping concentration; a second doped layer disposed on the side of the first doped layer away from the first surface and located within the second region, the second doped layer having a second doping concentration lower than the first doping concentration; and a third doped layer disposed on one side of the first surface, the third doped layer having a third doping concentration higher than the first doping concentration. This application can reduce parasitic absorption of light, facilitate ion transport, and further improve cell performance.

This invention discloses a self-cleaning and dust-resistant polyurethane synthetic leather and its preparation method, belonging to the field of polyurethane technology. The self-cleaning and dust-resistant polyurethane synthetic leather comprises an isocyanate-terminated polyurethane prepolymer, an N-doped titanium dioxide photocatalyst, a polyether / siloxane hybrid phosphate modifier, and various additives. This invention enhances the intrinsic photocatalytic activity of TiO2 through N-doping without altering its crystal structure. A self-designed hybrid phosphate modifier achieves N-TiO2 chemical anchoring and surface-oriented enrichment, significantly improving the utilization rate of active sites and achieving TiO2 reduction without sacrificing efficiency. Simultaneously, a dust-resistant, antistatic, and self-cleaning synergistic system is constructed to maintain long-term self-cleaning properties, while simultaneously optimizing the mechanical and weather-resistant properties of the synthetic leather. It is compatible with existing mass production processes and has significant industrialization value.

The application discloses a resin acid interface modified perovskite solar cell, which comprises a transparent conductive electrode, an electron transport layer, a perovskite active layer, an interface modification layer, a hole transport layer and a metal electrode layer which are stacked in sequence; wherein the electron transport layer is a SnO2 film, the interface modification layer is a resin acid (C 19 H 29 COOH), and the perovskite active layer is MAPbI3 (CH3NH3PbI3); the perovskite cell has lower interface defects, can maintain higher photoelectric conversion efficiency under high humidity conditions, and has higher environmental stability. The application further provides a preparation method of the resin acid interface modified perovskite solar cell.

The application discloses a water purifying agent preparation process for organic matter degradation in fish culture tail water, which comprises the following steps: (1) placing vitrified microbeads in hydrofluoric acid for stirring treatment to perform surface etching, and then separating the vitrified microbeads to wash and dry, so as to obtain pretreated vitrified microbeads; (2) mixing the pretreated vitrified microbeads, tetraethyl titanate and anhydrous ethanol, and then performing ultrasonic treatment, and then mixing the obtained microbeads with a carbon source, urea and clean water to perform hydrothermal reaction, so as to obtain a catalyst; and (3) mixing the catalyst, plastic powder, modified halloysite powder, original halloysite powder and glycerol diluent, and then granulating, and then heating and keeping warm of the obtained granular matters in a protective atmosphere, and then placing the obtained granular matters in clean water to stand, and then separating the granular matters to dry, so as to obtain the water purifying agent, which can not only perform efficient photocatalytic degradation on organic matter degradation, but also can be recycled and reused.

The application discloses a graphene short channel preparation method based on lateral etching, which comprises the following steps: firstly, forming a graphene layer and a metal layer on a substrate, and then forming a hard sacrificial mask on the metal layer; then, removing the metal layer outside the hard mask area by a chemical etching method, and etching the metal layer laterally at the edge of the mask area to form a graphene short channel; and finally, depositing metal based on the hard sacrificial mask to form a metal electrode on the other side. The preparation method of the application can obtain a graphene channel length which is not limited by the minimum line width of a patterning process equipment, and the graphene is not in contact with organic contaminants such as photoresist throughout the whole process, so that a higher channel carrier speed and a lower ohmic contact resistance are realized, the types of electrodes on both sides can be independently changed to construct an internal potential field, a high-speed and low-recombination-rate graphene channel is obtained, and then a high-speed photoelectric detector is realized, and the process is easy to control and has an array potential.

This application relates to the photovoltaic field. Embodiments of this application provide a back-contact battery, a back-contact tandem battery, and a photovoltaic module. The back-contact battery's grid includes a first grid and a second grid. The first grid is connected to an edge grid line, and the second grid is spaced apart from the edge grid line. The second grid includes at least a first sub-grid, a second sub-grid, and a third sub-grid. Along a second direction, the length of the second sub-grid is greater than the length of the first sub-grid and less than the length of the third sub-grid. The vertical distances L1 between the first sub-grid and the chamfered edge, L2 between the second sub-grid and the chamfered edge, and L3 between the third sub-grid and the second edge are all 0.8mm to 1.2mm. The chamfered edge can disperse stress in the edge region of the battery, improve the battery's mechanical strength, and reduce defect areas. The chamfered edge structure combined with the arrangement of the second grid improves the electrical reliability of the edge region of the back-contact battery, thereby enhancing the photoelectric conversion efficiency of the back-contact battery.

The application provides a dynamic diode power generation device and a preparation method thereof, a generator and a vehicle, and belongs to the technical field of vehicle parts. The dynamic diode power generation device comprises a first structural layer, an insulating layer and a second structural layer. The insulating layer and the first structural layer are stacked along a first direction, and the second structural layer is arranged on a side of the insulating layer away from the first structural layer, and the second structural layer is adapted to contact and slide on the surface of the insulating layer. The first structural layer and the second structural layer are adapted to form a heterojunction. The dynamic diode power generation device provided in the application embodiment can reduce carrier recombination and the formation of dark current, thereby forming stable and sustainable current and improving electrical performance.