32results about How to "Reduce compounding" patented technology

The application relates to the technical field of semiconductor manufacturing, in particular to a photosensitive diode which comprises an intrinsic layer, an N-type doped layer, a P-type doped layer, a cutoff ring, a dielectric layer, an oxidation layer and an anti-reflection layer, the intrinsic layer has opposite lower and upper ends, the N-type doped layer is arranged at the lower end of the intrinsic layer, the P-type doped layer is arranged at the upper end of the intrinsic layer, the cutoff ring is arranged at the upper end of the intrinsic layer, the intrinsic layer exists between the cutoff ring and the P-type doped layer, the dielectric layer is arranged above the P-type doped layer, the oxidation layer is arranged above the intrinsic layer between the P-type doped layer and the cutoff ring, the anti-reflection layer covers the dielectric layer and the oxidation layer, and the dielectric layer is doped with P-type ions. The photosensitive diode arranged in the structure can effectively improve the short-wave response capability of the photosensitive diode, and the production cost is relatively low.

The embodiment of the present application provides an IBC battery aluminum paste and an IBC battery, wherein the IBC battery aluminum paste provided by the embodiment of the present application comprises an organic additive, boron powder, aluminum powder, gallium powder, glass powder and an organic binder. By adding gallium powder in the aluminum paste, because the gallium element has etching effect and high density, it is faster than aluminum to drop to the silicon surface in the sintering process, so that the Ga-Si contact probability is increased, the contact resistance of the paste and the battery is reduced, and a high open circuit voltage can be maintained. At the same time, because part of the aluminum powder is replaced by gallium, the content of aluminum is reduced, which is beneficial to reducing the side effect of Al, so that the Al-Si reaction is weakened, the formed aluminum silicon corrosion pit is shallow, the recombination is reduced, so as to improve the open circuit voltage and the photoelectric conversion efficiency of the battery. Therefore, the problem that the existing IBC battery aluminum paste is easy to form metal recombination in the cooling process after being sintered into a positive electrode grid line, resulting in the decrease of the open circuit voltage and the photoelectric conversion efficiency of the battery piece is solved.

This invention discloses a glass powder for the main grid paste of TOPCon crystalline silicon solar cells and its preparation method. The glass powder is obtained by mixing glass frits A and B obtained after cold rolling at a mass ratio of 1.5 to 2:1, followed by secondary melting and cold rolling. Glass frit A includes PbO, SiO2, B2O3, Li2O, Na2O, etc., and glass frit B includes Bi2O3, SiO2, AgNO3, B2O3, Li2O, Na2O, etc. Distilled water is added to glass frit B during the batching process to fully combine AgNO3 with other oxides, and the mixture is dried to a viscous state before sintering. During the sintering process, laser-enhanced contact optimization technology is used to reduce AgO in the glass to silver microcrystals, thereby improving the electrical performance of the main grid lines. The printed solar cells exhibit reduced damp heat decay, resulting in high module reliability and improved photoelectric conversion efficiency while ensuring high welding tensile strength. The resulting glass powder does not excessively etch the silicon nitride and aluminum oxide passivation layers, and the prepared slurry can be sintered at 650-800℃, which can meet the requirements of the front and back main grid electrodes of TOPCon batteries.

The invention provides a preparation method of a tin-doped scaly nano gallium oxide thin film solar blind ultraviolet photoelectric detector. The preparation method comprises the following steps: carrying out cleaning pretreatment on a single crystal GaN substrate; depositing an Au thin film on the pretreated single crystal GaN substrate to serve as a catalyst layer; the preparation method comprises the following steps: mixing Ga2O3, diamond and SnO2 powder according to a certain mass ratio to prepare a precursor; putting the single crystal GaN substrate deposited with the Au thin film and a precursor into a CVD furnace, and growing according to preset gas flow, pressure intensity, reaction temperature and reaction time to obtain a tin-doped scaly nano gallium oxide thin film; and respectively preparing electrodes on the surface of the tin-doped scaly nano gallium oxide thin film and the surface of the GaN substrate by adopting a radio frequency magnetron sputtering method. The conductivity of the thin film is improved through tin doping, the specific surface area and light absorption are increased through the scaly nanostructure, high-performance deep ultraviolet photoelectric detection is achieved, and the technical problem that in the prior art, the dark current of a device is high is solved.

This application provides a solar cell and a method for fabricating the same. The solar cell includes: a substrate having a first surface, the first surface being located on the same side as the back surface of the solar cell, the solar cell including a first region and a second region on the back surface; a tunneling oxide layer disposed on one side of the first surface; a first doped layer disposed on one side of the first surface and located within the second region, and on the surface of the tunneling oxide layer facing away from the substrate, the first doped layer having a first doping concentration; a second doped layer disposed on the side of the first doped layer away from the first surface and located within the second region, the second doped layer having a second doping concentration lower than the first doping concentration; and a third doped layer disposed on one side of the first surface, the third doped layer having a third doping concentration higher than the first doping concentration. This application can reduce parasitic absorption of light, facilitate ion transport, and further improve cell performance.

The invention discloses a photocatalytic material with a heptazine-triazine structure as well as a preparation method and application of the photocatalytic material. Relates to the field of photocatalysis. The photocatalytic material with the heptazine-triazine structure comprises a boron-doped heptazine-triazine heterojunction structure, and the content of a triazine unit in the heptazine-triazine heterojunction structure is higher than that of a heptazine unit; the raw material of the boron-doped heptazine-triazine heterojunction structure comprises the following components: a boron-containing carbon nitride precursor and alkali metal salt, the raw materials of the boron-containing carbon nitride precursor comprise melamine and a boron source. The photocatalytic material shows excellent performance under visible light, the H2O2 yield can reach 2423 mol L <-1 > h <-1 > (44.1 times of that of traditional carbon nitride), and the hydrogen evolution rate is increased by 70 times; the apparent quantum yield of 450nm single wavelength reaches 14.4%, and the visible light absorption range is effectively expanded; and after continuous 24-hour illumination, the activity is not attenuated, and the stability is excellent.

The invention provides a method for removing tetravalent tin on the surface of stannous niobate through a reduction method and application, and relates to the technical field of photocatalysis and photoelectrocatalysis. The method comprises the following steps: infiltrating a stannous niobate electrode material in an electrolyte solution, so that the surface of stannous niobate is in full contact with the electrolyte solution; bias voltage is applied to the stannous niobate electrode material, so that the tetravalent tin on the surface of the stannous niobate is subjected to reduction reaction to be removed, and the charge shielding layer formed on the surface of the stannous niobate by the tetravalent tin is removed. By adopting the technical scheme, the reduction dissolution of tetravalent tin on the surface of stannous niobate is effectively regulated and controlled by controlling the composition of the electrolyte solution and applying the bias voltage, so that the problem of relatively low photovoltage caused by Fermi level pinning due to the existence of the tetravalent tin is solved, the recombination of charges at tetravalent tin sites is also reduced, and the photoelectric conversion efficiency is improved. Therefore, the purpose of cleaning the surface and restoring the surface to the initial state is achieved.

The application discloses a kind of adjustable defect sub-nanometer gold load nickel iron composite photoanode catalyst, preparation method and application, deionized water is introduced into nitrogen and is deoxidized, multi-walled carbon nanotube treated by strong acid is placed in deionized water after deoxidation, after ultrasonic dispersion is uniform, together with FeCl2, NiCl2, HMT and ammonium fluoride is added into reaction kettle, reaction is carried out at 120 DEG C for 6 hours, after cooling, it is taken out, using deionized water is filtered, washed after, HAuCl4 is quickly added, sealed and is stirred in dark room, after reaction is finished, it is filtered, washed, nitrogen is dried at room temperature and is preserved in oxygen-free atmosphere.The application is synthesized Au / NiFe (hydroxyl) oxide / CNT composite catalyst by in-situ oxidation technology one step.The method can be simultaneously controlled on the basis of heterojunction Defects, the synergistic effect of both makes the catalyst performance be further optimized.Synthesis method is simple and direct, and catalytic effect is obviously improved.

The application discloses a passivation method of a TOPCon cell, which comprises the following steps: providing a TOPCon cell; the TOPCon cell comprises an N-type silicon substrate, the N-type silicon substrate comprises opposite front and back surfaces; the front surface comprises a first electrode, and the back surface comprises a second electrode; cutting at a reserved cutting position of the TOPCon cell by using a preset cutting process to form a TOPCon half cell; sequentially forming a first passivation layer, a second passivation layer and a barrier layer on a side of the cutting surface surface in a direction outward from the N-type silicon substrate to obtain a laminated passivation structure; the edge of the laminated passivation structure is not in contact with the first electrode and the second electrode; and performing low-temperature annealing on the TOPCon half cell with the laminated passivation structure. By using the method, the interface tunneling, gradient hydrogen passivation and field effect synergistic effect are realized, the carrier recombination of the laser cutting side surface is reduced, and the barrier layer effectively blocks the water and oxygen erosion.

This invention discloses a self-cleaning and dust-resistant polyurethane synthetic leather and its preparation method, belonging to the field of polyurethane technology. The self-cleaning and dust-resistant polyurethane synthetic leather comprises an isocyanate-terminated polyurethane prepolymer, an N-doped titanium dioxide photocatalyst, a polyether / siloxane hybrid phosphate modifier, and various additives. This invention enhances the intrinsic photocatalytic activity of TiO2 through N-doping without altering its crystal structure. A self-designed hybrid phosphate modifier achieves N-TiO2 chemical anchoring and surface-oriented enrichment, significantly improving the utilization rate of active sites and achieving TiO2 reduction without sacrificing efficiency. Simultaneously, a dust-resistant, antistatic, and self-cleaning synergistic system is constructed to maintain long-term self-cleaning properties, while simultaneously optimizing the mechanical and weather-resistant properties of the synthetic leather. It is compatible with existing mass production processes and has significant industrialization value.

The invention provides an upright graphene heterojunction, application and a preparation method. The upright graphene heterojunction comprises a silicon carbide layer, an aluminum oxide layer, a gallium arsenide layer and upright graphene which are sequentially arranged in a layered manner. In the vertical graphene heterojunction provided by the invention, through the cooperation of the silicon carbide layer and the aluminum oxide layer, the vertical graphene is used as a light absorption main body, the gallium arsenide layer is used as a hot electron absorption layer, and the vertical graphene heterojunction is used for carrier modulation and is used as an amplification channel. Through cooperation of the silicon carbide layer, the aluminum oxide layer and the gallium arsenide layer, the upright graphene heterojunction can realize detection of near-infrared light.

The utility model relates to a solar cell dense grid line structure which comprises a plurality of main grids arranged on a silicon substrate at intervals and a plurality of first auxiliary grids perpendicular to the main grids, each first auxiliary grid is provided with a plurality of disconnected spacer regions, and the spacer regions between the adjacent first auxiliary grids are arranged in a staggered mode. At least two second auxiliary grids used for forming a loop are arranged between every two adjacent first auxiliary grids, and the second auxiliary grids are parallel to the length direction of the main grids. The utility model has the effect of reducing the negative effects of opening voltage reduction, silver paste consumption increase and shading area increase caused by the increase of the number of the grid lines.

The invention belongs to the technical field of photocatalytic materials, and particularly relates to an application of an Al-MnMoO4 / g-C3N4 heterojunction photocatalyst in photocatalytic degradation of RhB (rhodamine B). According to the invention, the Al-MnMoO4 / g-C3N4 heterojunction photocatalyst prepared by using a molten salt method and a calcination method is uniformly dispersed in an RhB aqueous solution, and photocatalytic degradation is carried out under simulated sunlight irradiation. The Al-MnMoO4 / g-C3N4 heterojunction photocatalyst has good stability and light absorption characteristics, can effectively reduce recombination of photo-induced electrons and holes and improve photocatalytic activity, has the application cost obviously lower than that of a noble metal modified photocatalyst, is mild in reaction condition, does not produce secondary pollutants in the degradation process, and is suitable for industrial production. And the method meets the green and environment-friendly wastewater treatment requirements and meets the currently advocated green and environment-friendly concept.

The present disclosure relates to a preparation method of a nano-porous doped bismuth vanadate and a photoactive electrode, and relates to the technical field of doped bismuth vanadate preparation. The method comprises: 1. obtaining a first solution: obtaining a first citric acid solution, adding a bismuth source, a lanthanum source and a molybdenum source to obtain the first solution; the amount of substance of citric acid is N, and the amounts of substance of bismuth element, lanthanum element and molybdenum element are x, y and z respectively, so that N:(x+y+z)=(1.5-4):1; obtaining a second solution: obtaining a second citric acid solution and adding a vanadium source to obtain the second solution; the amount of substance of vanadium element is A, so that x:y:z:A=(6-9):(0.5-2):(0.5-2):10, and x+y+z=A; 2. adding the second solution to the first solution in batches to obtain a third solution; 3. adjusting the pH value of the third solution to 4-8 and drying; calcining the dried product to obtain the nano-porous doped bismuth vanadate.

The invention relates to the technical field of semiconductor optoelectronic materials, in particular to a heterojunction photoelectric material based on the in-situ self-reduction surface plasma resonance effect, a preparation method and application, and the technical points are as follows: MoS2 quantum dots are deposited on a substrate, and a Cs2AgBiI6 nanosheet with a selectively exposed (100) crystal face is prepared by a low-temperature solvothermal method to obtain a Cs2AgBiI6 (100) nanosheet; cs2AgBiI6 (100) nanosheets are deposited on a MoS2QDs-substrate through a spin-coating method to prepare a Cs2AgBiI6 (100) / MoS2 QDs-substrate, a reducing agent is sprayed on the surface of the Cs2AgBiI6 (100) / MoS2 QDs-substrate, Ag elementary substances are generated through in-situ reduction, the heterojunction photoelectric material is obtained, an all-inorganic heterojunction system is constructed, the plasma resonance effect is introduced, and collaborative improvement of wide spectral response, high sensitivity, rapid response and high stability is achieved.

The application discloses a resin acid interface modified perovskite solar cell, which comprises a transparent conductive electrode, an electron transport layer, a perovskite active layer, an interface modification layer, a hole transport layer and a metal electrode layer which are stacked in sequence; wherein the electron transport layer is a SnO2 film, the interface modification layer is a resin acid (C 19 H 29 COOH), and the perovskite active layer is MAPbI3 (CH3NH3PbI3); the perovskite cell has lower interface defects, can maintain higher photoelectric conversion efficiency under high humidity conditions, and has higher environmental stability. The application further provides a preparation method of the resin acid interface modified perovskite solar cell.

The invention provides a TiN / N-TiO2 photocatalytic composite material for producing hydrogen by decomposing water as well as a preparation method and application of the TiN / N-TiO2 photocatalytic composite material, and belongs to the technical field of hydrogen production. The preparation method comprises the following steps: calcining rutile phase N-TiO2 powder in a mixed atmosphere of hydrogen and inert gas, so as to obtain the TiN / N-TiO2 photocatalytic composite material. According to the preparation method, the TiN / N-TiO2 heterojunction photocatalyst with the lattice matching heterogeneous interface is successfully prepared. The separation and transfer efficiency of photon-generated carriers in TiN / N-TiO2 can be improved by forming the lattice matching heterogeneous interface. Meanwhile, the light absorption capacity of the TiN / N-TiO2 in the range of 3002000 nm is obviously enhanced. Finally, TiN / N-TiO2 has excellent activity of photocatalytic decomposition of water to produce hydrogen.

The invention provides a preparation method and application of a size-controllable high-crystallinity stannous niobate single crystal. The preparation method comprises the following steps: mixing stannous chloride, niobium pentoxide and halogenated metal salt by adopting a molten salt method to obtain a mixed salt, carrying out molten salt reaction on the mixed salt in an inert gas atmosphere, and annealing to obtain the high-crystallinity stannous niobate single crystal from the nanometer level to the micron level. According to the technical scheme, the metal salt with the low melting point serves as a reaction medium and is evenly mixed with niobium oxide and stannous chloride to be subjected to the molten salt reaction, the high-crystallinity stannous niobate single crystal material with the controllable size can be prepared by adjusting the technological conditions and the proportion of the raw materials in the reaction process, single crystals with the uniform size are obtained, and the preparation method is simple and easy to implement. The effective migration distance of carriers can be effectively controlled, so that the carriers can be transmitted to the surface of the single crystal from the inside to react, and stannous niobate single crystal materials with different sizes can be obtained according to actual requirements.

The application discloses a water purifying agent preparation process for organic matter degradation in fish culture tail water, which comprises the following steps: (1) placing vitrified microbeads in hydrofluoric acid for stirring treatment to perform surface etching, and then separating the vitrified microbeads to wash and dry, so as to obtain pretreated vitrified microbeads; (2) mixing the pretreated vitrified microbeads, tetraethyl titanate and anhydrous ethanol, and then performing ultrasonic treatment, and then mixing the obtained microbeads with a carbon source, urea and clean water to perform hydrothermal reaction, so as to obtain a catalyst; and (3) mixing the catalyst, plastic powder, modified halloysite powder, original halloysite powder and glycerol diluent, and then granulating, and then heating and keeping warm of the obtained granular matters in a protective atmosphere, and then placing the obtained granular matters in clean water to stand, and then separating the granular matters to dry, so as to obtain the water purifying agent, which can not only perform efficient photocatalytic degradation on organic matter degradation, but also can be recycled and reused.

The invention belongs to the technical field of solar cells, and particularly relates to a trans-perovskite solar cell and a preparation method thereof. According to the invention, N-nitroso-N-methyl urethane is introduced as an additive, so that the nucleation and growth process of perovskite crystals can be effectively regulated and controlled, the formation of large-size and high-crystallinity perovskite crystal grains is promoted, and the number of crystal boundaries is reduced. Meanwhile, nitroso and urethane in the N-nitroso-N-methyl urethane molecule can interact with defect sites such as Pb < 2 + > and I <-> which are not coordinated in a perovskite crystal lattice, so that effective defect passivation is realized. Through the combined action of the two aspects, the non-radiative recombination loss of carriers in the perovskite layer is greatly reduced, so that the photoelectric conversion efficiency of the cell is remarkably improved. And the preparation process is simple, low in cost and suitable for large-scale production.

The present disclosure relates to the photovoltaic field, and provides a photovoltaic cell and a manufacturing method thereof, a laminated cell, and a photovoltaic module, the photovoltaic cell comprising: a substrate having a first surface side and a second surface side opposite to each other in a first direction; the first surface side comprises a first area and a second area surrounding the first area, and the first area comprises a third area and a fourth area which are alternately arranged in the second direction; the second surface side comprises a fifth area and a sixth area surrounding the fifth area, and the fifth area comprises a seventh area and an eighth area which are alternately arranged in the second direction; the first doped conductive part is positioned in the third region; the first passivation layer is located in the second region; the second passivation layer is located in the sixth region; the tunneling layer is located in the seventh region; and the second doped conductive part is positioned on one side, far away from the substrate, of the tunneling layer. The present disclosure at least facilitates reduction of electric leakage in an edge region in a photovoltaic cell.

This application relates to the field of photovoltaic technology, and particularly to perovskite solar cells, tandem solar cells, and photovoltaic modules. The perovskite solar cell includes a perovskite light-absorbing layer, which comprises perovskite material and amino-functionalized polymer additives. The perovskite material includes materials with the general formula ABX3, where A ions are monovalent cations and B ions include Pb. 2+ The X ion is a monovalent anion; the amino-functionalized polymer additives include at least one selected from polyethyleneimine, polypropyleneimine, amino-functionalized polyetherimide, amino-functionalized polyvinylpyrrolidone, amino-functionalized polyvinyl alcohol, amino-functionalized polyacrylic acid, and amino-functionalized polyquaternary ammonium salt. This application adds amino-functionalized polymer additives to the perovskite light-absorbing layer to passivate defects at perovskite grain boundaries, reduce surface state density, prolong carrier lifetime, increase short-circuit current density, enhance the bending resistance of the perovskite light-absorbing layer, and improve the environmental stability of the device.

This invention discloses a solar cell and its fabrication method, belonging to the field of solar cell technology. In this solar cell, a first intrinsic silicon layer, a first doped silicon layer, a first transparent conductive layer, and a first metal electrode are sequentially disposed on the front side of a silicon substrate; a second intrinsic silicon layer, a second doped silicon layer, a second transparent conductive layer, and a second metal electrode are sequentially disposed on the back side of the silicon substrate; wherein, the back side of the silicon substrate has a pyramidal textured structure with a height of h1, and a boron-doped diffusion layer is disposed from the apex to the bottom of the pyramidal textured structure, within a depth range from a position of h2 to a depth of h2+d; h1>h2+d. By setting an intermittent boron-doped diffusion layer on the back side of the solar cell, it can serve as a P+ emitter, thereby increasing the adsorption force of holes on the back side, reducing recombination, and thus improving the cell efficiency.

The application discloses a graphene short channel preparation method based on lateral etching, which comprises the following steps: firstly, forming a graphene layer and a metal layer on a substrate, and then forming a hard sacrificial mask on the metal layer; then, removing the metal layer outside the hard mask area by a chemical etching method, and etching the metal layer laterally at the edge of the mask area to form a graphene short channel; and finally, depositing metal based on the hard sacrificial mask to form a metal electrode on the other side. The preparation method of the application can obtain a graphene channel length which is not limited by the minimum line width of a patterning process equipment, and the graphene is not in contact with organic contaminants such as photoresist throughout the whole process, so that a higher channel carrier speed and a lower ohmic contact resistance are realized, the types of electrodes on both sides can be independently changed to construct an internal potential field, a high-speed and low-recombination-rate graphene channel is obtained, and then a high-speed photoelectric detector is realized, and the process is easy to control and has an array potential.

This application relates to the photovoltaic field. Embodiments of this application provide a back-contact battery, a back-contact tandem battery, and a photovoltaic module. The back-contact battery's grid includes a first grid and a second grid. The first grid is connected to an edge grid line, and the second grid is spaced apart from the edge grid line. The second grid includes at least a first sub-grid, a second sub-grid, and a third sub-grid. Along a second direction, the length of the second sub-grid is greater than the length of the first sub-grid and less than the length of the third sub-grid. The vertical distances L1 between the first sub-grid and the chamfered edge, L2 between the second sub-grid and the chamfered edge, and L3 between the third sub-grid and the second edge are all 0.8mm to 1.2mm. The chamfered edge can disperse stress in the edge region of the battery, improve the battery's mechanical strength, and reduce defect areas. The chamfered edge structure combined with the arrangement of the second grid improves the electrical reliability of the edge region of the back-contact battery, thereby enhancing the photoelectric conversion efficiency of the back-contact battery.

The application provides a dynamic diode power generation device and a preparation method thereof, a generator and a vehicle, and belongs to the technical field of vehicle parts. The dynamic diode power generation device comprises a first structural layer, an insulating layer and a second structural layer. The insulating layer and the first structural layer are stacked along a first direction, and the second structural layer is arranged on a side of the insulating layer away from the first structural layer, and the second structural layer is adapted to contact and slide on the surface of the insulating layer. The first structural layer and the second structural layer are adapted to form a heterojunction. The dynamic diode power generation device provided in the application embodiment can reduce carrier recombination and the formation of dark current, thereby forming stable and sustainable current and improving electrical performance.

The application provides a crystalline silicon solar cell, a preparation method and application thereof. The crystalline silicon solar cell comprises a substrate, a thin film layer and an electrode which are sequentially arranged. The thin film layer comprises a first thin film area and a second thin film area. The thickness of the first thin film area is greater than that of the second thin film area. The electrode is arranged on the second thin film area and forms a contact with the substrate. By reducing the thickness of the second thin film area which is in contact with the electrode, the contact resistance between the electrode and the substrate is improved, the recombination in the electrode area is reduced, the average open circuit voltage is increased, and the optical performance and the improvement window of the passivation performance of the first thin film area which is not in contact with the electrode are increased. The crystalline silicon solar cell solves the problem that the electrode ablation capacity is incompatible with the thin film composition and thickness, effectively improves the cell efficiency, and the preparation method is compatible with the screen printing high-temperature sintering process, and large-scale mass production at low cost can be realized.

The application discloses a BC battery and a preparation method thereof, and comprises the following steps: providing an N-type silicon substrate; the N-type silicon substrate comprises a front surface and a back surface, and the back surface comprises first regions and second regions arranged alternately in an interdigital manner; forming a textured structure on the front surface, and forming a first composite passivation layer on a side surface of the textured structure away from the N-type silicon substrate; preparing a first transition layer on the first regions and a second transition layer on the second regions; performing element doping on the first regions and the second regions to form a first doped layer in the N-type silicon substrate of the first regions and a second doped layer in the N-type silicon substrate of the second regions; performing low-temperature electroplating on the N-type silicon substrate to form a first electrode in contact with the first doped layer and a second electrode in contact with the second doped layer; and performing low-temperature annealing on the N-type silicon substrate on which the first electrode and the second electrode are formed. By using the above method, carrier recombination is effectively reduced, and the method is compatible with low-temperature electroplating and annealing processes, so that the battery conversion efficiency and the manufacturing yield are improved.

This invention provides a method for preparing a silver chloride / silver-copper-iron-titanium oxide composite material, comprising the following steps: Step S1, citric acid is dissolved in an ethanol solution to obtain a mixture A; Step S2, tetrabutyl titanate solution is added dropwise to mixture A to obtain a mixture B; Step S3, copper nitrate and ferric nitrate are added to deionized water to obtain a mixture C; Step S4, mixture B is added dropwise to mixture C, and the pH is adjusted to obtain a mixture D; Step S5, mixture D undergoes a solvothermal reaction to obtain a precipitate; Step S6, the precipitate is washed, centrifuged, dried, and ground to obtain a copper-iron-titanium oxide material; Step S7, silver nitrate and the copper-iron-titanium oxide material are weighed and added to a quartz reaction tube, deionized water is added, and photodeposition is performed using a mercury lamp to obtain a mixed solution; Step S8, sodium chloride solution is added dropwise to the mixed solution to obtain a mixture; Step S9, the mixture is centrifuged, washed, dried, and ground to obtain a silver chloride-copper-iron-titanium oxide composite material.

The application discloses a kind of double-vacancy ZnCdS solid solution photocatalyst and its preparation method and application, preparation method includes adding cadmium source, zinc source and sulfur source into anhydrous ethanol and stirring dissolution, the mass ratio of cadmium source, zinc source, sulfur source is 1:9:3, under the condition of 70~90 ℃ water bath reaction, after suction filtration, washing, drying, obtain powdery ZnCdS solid solution, NaOH is added to water and stirred and dissolved, then add powdery ZnCdS solid solution, again ultrasonic treatment, after suction filtration, washing, drying, obtain double-vacancy ZnCdS solid solution photocatalyst.The preparation method of the application has the advantages of high hydrogen production rate, good repeatability, simple preparation, low cost, etc., the obtained double-vacancy ZnCdS solid solution photocatalyst can be applied to the field of photocatalytic hydrogen production, and the hydrogen production efficiency is as high as 12.69mmol·g ‑1 ·h ‑1 , which is 23.94 times that of pure ZnS and 11.64 times that of pure CdS.