Described herein are precursors and methods for forming
silicon-containing films. In one aspect, there is a precursor of following Formula I:wherein R1 and R3 are independently selected from linear or branched C3 to C10
alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C1 to C6 dialkylamino group, an
electron withdrawing and a C6 to C10
aryl group; R2 and R4 are independently selected from
hydrogen, a linear or branched C3 to C10
alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C1 to C6 dialkylamino group, an
electron withdrawing, and a C6 to C10
aryl group; and wherein any one, all, or none of R1 and R2, R3 and R4, R1 and R3, or R2 and R4 are linked to form a ring.