Patents
Literature
Patsnap Copilot is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Patsnap Copilot

4850results about How to "High melting point" patented technology

Forming an optical element on the surface of a light emitting device for improved light extraction

Provided is a light emitting device including a Fresnel lens and / or a holographic diffuser formed on a surface of a semiconductor light emitter for improved light extraction, and a method for forming such light emitting device. Also provided is a light emitting device including an optical element stamped on a surface for improved light extraction and the stamping method used to form such device. An optical element formed on the surface of a semiconductor light emitter reduces reflective loss and loss due to total internal reflection, thereby improving light extraction efficiency. A Fresnel lens or a holographic diffuser may be formed on a surface by wet chemical etching or dry etching techniques, such as plasma etching, reactive ion etching, and chemically-assisted ion beam etching, optionally in conjunction with a lithographic technique. In addition, a Fresnel lens or a holographic diffuser may be milled, scribed, or ablated into the surface. Stamping, an alternative method for forming an optical element, can also be used to form a Fresnel lens or a holographic diffuser on the surface of a semiconductor light emitter. Stamping includes pressing a stamping block against the surface of a light emitting diode. The stamping block has a shape and pattern that are the inverse of the desired optical element. Optionally, stamping can be done before, after, or concurrently with wafer-bonding. Alternatively, a material can be stamped and later bonded to the semiconductor light emitter.
Owner:LUMILEDS

Process for producing composite material of Ti3SiC2 modified C/SiC

The invention discloses a method for preparing Ti3SiC2 modified C / SiC composite material, comprising the following steps: firstly, carrying out ultrasonic cleaning and drying on the pre-prepared body to be modified; compounding the size with distilled water, cellulose sodium carboxy methyl and TiC powder; then carrying out vacuum infiltration combined with pressure infiltration on the pre-prepared body and refrigeration and drying in vacuum; coating industrial silicon powder on the surface of the pre-prepared body; calcining the pre-prepared body in a vacuum furnace to lead the silicon to fuse to penetrate into the pre-prepared body; and cooling the pre-prepared body gradually to room temperature after full reaction in the vacuum furnace. As SI method is adopted to lead C / C or C / SiC composite material to be firstly internally filled with TiC granules, then MI method is adopted to penetrate silicon fusant, and TiC reacts with Si to generate Ti3SiC2 and SiC, the content of residue Si in the composite material is reduced, and the Ti3SiC2 phase in-situ generated in the C / SiC composite material causes the use temperature of the modified C / SiC composite material to rise from 1420 DEG C in the prior art to 1500-2300 DEG C and the fracture toughness property to rise from 8MPa.m in the prior art to 9-16 MPa.m.
Owner:NORTHWESTERN POLYTECHNICAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products