354 results about "Titanium nitride" patented technology

The invention belongs to the technical field of solid-state lithium metal batteries. The invention provides a mixed ion / electron conductor intermediate layer with a directional double-layer structure. The mixed ion / electron conductor intermediate layer comprises a titanium nitride nanotube array and lithium ion conductor layers deposited on the inner surface and the upper surface of the titanium nitride nanotube array. The lithium ion conductor layer on the upper layer of the directional double-layer structure mixed ion / electron conductor intermediate layer has high lithium ion conductivity and low electron conductivity, and can inhibit nucleation of lithium on an electrolyte interface and growth of lithium dendrites; the lower layer can guide lithium to realize uniform deposition and stripping in the nanotubes through a creep mechanism, and stress is effectively released, so that the electrochemical performance of the battery is improved; the creep path of lithium deposition stripping can be shortened, and the diffusion and transmission capability of lithium ions can be remarkably enhanced by matching with a lithium ion conductor with a high lithium ion diffusion rate; the middle layer is thin and controllable in thickness, the overall energy density of the battery is hardly reduced, and the application prospect is good.

The invention discloses a semiconductor device and a manufacturing method thereof. A semiconductor device includes a plurality of memory cells, each memory cell including: a memory layer; a first selector layer formed in an upper portion or a lower portion of the memory layer to select the memory layer; a second selector layer for selecting a memory layer; and an interface layer disposed between the first selector layer and the second selector layer, in which the first selector layer and the second selector layer include an amorphous silicon layer including one or more dopants selected from the group including Group 13 elements, Group 14 elements, and Group 15 elements of the periodic table, and wherein the interface layer is selected from the group comprising silicon oxide, silicon carbonitride, silicon carbonitride, silicon nitride, tantalum nitride, titanium nitride, aluminum nitride, and hafnium nitride.

The invention provides a titanium nitride film growth method and a growth machine, and the growth method comprises the steps: S1, depositing a titanium nitride film with a set thickness H0 on the surface of a wafer, and then carrying out the impurity removal and repair; s2, the step S1 is repeated until the deposition thickness of the titanium nitride thin film is the thickness H; h is greater than H0. According to the invention, the grown titanium nitride film has fewer impurities, and the bulk resistance is reduced.

To provide a semiconductor device capable of suppressing reaction between a semiconductor material of a semiconductor region and a metal material of an electrode, and to provide a method of manufacturing the same.SOLUTION: A semiconductor device according to an embodiment includes a first electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a gate electrode, a fourth semiconductor region of the second conductivity type, a second electrode, and a third electrode. The second semiconductor region is provided on the first region of the first semiconductor region. The gate electrode faces the second semiconductor region via the gate insulating layer. The fourth semiconductor region is provided on the second region of the first semiconductor region. The second electrode is provided on the second and third semiconductor regions via the first contact. The third electrode is provided on the fourth semiconductor region via a second contact. The first contact and the second contact include a titanium-containing layer, a titanium nitride-containing layer provided on the titanium-containing layer, and a tungsten-containing layer provided on the titanium nitride-containing layer.SELECTED DRAWING: Figure 6

Methods of filling a gap in a semiconductor structure are presented. A titanium nitride and sacrificial silicon nitride spacer is deposited onto a line pattern comprising a trench between two lines of the line pattern. The titanium nitride and sacrificial silicon nitride spacer is etched to leave titanium nitride and sacrificial silicon nitride spacer covering sides of the two lines within the trench. An organic planarization layer is applied over the line pattern and the titanium nitride and sacrificial silicon nitride spacer. A pillar cut is cut through the organic planarization layer and into the trench to form a gap within the trench. The gap is filled with silicon oxide.

The application discloses a preparation method and application of an oxygen-evolving electrocatalyst of iridium oxide anchored by surface titanium oxygen species. The catalyst is obtained by electro-oxidizing a titanium nitride supported metal iridium cluster pre-catalyst. The surface titanium oxygen species is obtained by electrochemical reconstruction of titanium nitride, and the iridium oxide is obtained by electro-oxidizing a metal iridium cluster. When the catalyst is used for an anode oxygen evolution reaction, the catalyst has excellent catalytic activity and significantly improved stability. Compared with existing catalysts, the catalyst provided by the application is obtained by electro-oxidizing a pre-catalyst. In a PEM electrolytic cell, the titanium nitride carrier in the pre-catalyst plays a role of a pore-forming agent in the electro-oxidation dissolution process, and the catalytic layer is spontaneously thickened, thereby solving the problems of poor uniformity and mechanical stability of a super-thin catalytic layer electrode of a PEM water electrolysis cell, and more easily realizing large-scale industrial application under an ultra-low iridium load.

According to a first aspect of the present invention there is provided a method of coating a bipolar plate, comprising the steps of: providing a bipolar plate wherein at least an outer layer of the bipolar plate comprises metallic titanium; and performing laser nitridation on the bipolar plate so as to form a titanium nitride coating on the outer surface of the bipolar plate. The inventors have found that laser nitridation of a titanium bipolar plate results in a bipolar plate having a high stability TiN coating which has good conformality, chemical stability and / or high conductivity. Furthermore, the formation of the TiN coating by laser nitriding can be well integrated into a manufacturing process of a bipolar plate, such as a roll-to-plate process including a laser welding step, compared to a deposition method known in the prior art, and has the advantages of high efficiency and simplification. The TiN coating on the bipolar plate can be directly used for an electrochemical reactor or can be used as a substrate of a subsequent coating.

The application provides a ternary positive electrode material, a preparation method and application thereof; the ternary positive electrode material comprises a base and a coating on the surface of the base; the base is a ternary material co-doped with titanium elements and nitrogen elements; and the coating is titanium nitride. In the application, titanium nitride is used as a coating agent and a dopant, so that the Ti elements and the N elements are co-doped into the crystal lattice of the ternary material, and titanium nitride is coated on the surface of the ternary material; the doping and the coating have a synergistic effect, so that the prepared ternary positive electrode material has better cycle rate performance and high-temperature storage performance.

The invention provides a method for forming a titanium / titanium nitride film. The method comprises the following steps of: depositing a titanium metal layer on a semiconductor substrate; and performing thermal annealing treatment on the semiconductor substrate deposited with the titanium metal layer in a nitrogen-containing atmosphere, so that the titanium metal layer reacts with the semiconductor substrate to form a metal silicide, and meanwhile, the titanium metal layer reacts with the nitrogen-containing atmosphere to generate a titanium nitride layer. The silicide contact layer and the titanium nitride barrier layer are formed at the same time through the in-situ reaction, and the technological process is simplified. The titanium nitride layer formed by the method is thin, stress distribution of the wafer is effectively improved, the problem of wafer warping caused by the fact that the titanium nitride layer is too thick in a traditional process is solved, meanwhile, it is guaranteed that a silicon interface reacts sufficiently, contact resistance is reduced, and consistency of electrical parameters of a device is improved.

This application provides a method for improving the performance stability of a metal gate device, comprising: step one, providing a substrate, forming an interlayer dielectric layer on the substrate, and forming trenches in the interlayer dielectric layer; step two, forming a first work function metal layer in the trenches; step three, forming a second work function metal layer in the trenches located in the NMOS region of the substrate; step four, forming a titanium nitride barrier layer covering the second work function metal layer; step five, hydrogen treating the titanium nitride barrier layer to reduce the chlorine content of the titanium nitride barrier layer; and step six, forming a metal gate in the trenches. According to this application, the chlorine content of titanium nitride in the metal gate device can be significantly reduced, thereby significantly improving the performance stability of the metal gate device.

The invention discloses a p-channel gallium nitride transistor and a preparation method thereof, and relates to the technical field of semiconductor devices. The p-channel gallium nitride transistor comprises a substrate; the barrier layer and the p-type gallium nitride layer are located on one side of the substrate; the p-type gallium nitride layer and the barrier layer form a hole heterojunction structure; the p-type gallium nitride layer comprises a first groove, and a first bulge and a second bulge which are positioned on two opposite sides of the first groove; the ratio range of the thickness L1 of the groove bottom of the first groove to the thickness L2 of the p-type gallium nitride layer at the first bulge and / or the second bulge is 1 / 14 < = L1 / L2 < = 3 / 14; a depletion layer located in the first groove; the depletion layer comprises a titanium metal layer and a titanium nitride layer which are laminated, and the titanium nitride layer is located between the titanium metal layer and the p-type gallium nitride layer; the source electrode and the drain electrode are located on the sides, away from the substrate, of the first protrusion and the second protrusion respectively; the grid electrode is located in the first groove and located on the side, away from the p-type gallium nitride layer, of the depletion layer. The stability and the electrical performance of the transistor are improved.

The invention relates to the field of wear-resistant coatings, in particular to a wear-resistant coating and a preparation method thereof. And cleaning and removing an oxide layer on the surface of the substrate to obtain a base surface. And a transition layer is formed on the surface of the basal plane by using a stellite 6 welding material through multiple plasma arc surfacing. And grinding and cleaning the surface of the transition layer to form a bonding surface. A wear-resistant layer is formed on the surface of the bonding surface through chemical vapor deposition, and the component of the wear-resistant layer is titanium nitride. The wear-resistant layer and the base body are connected through the transition layer, so that interface shear stress generated in the high-temperature friction process is gradually released in the transition layer in the thickness direction, and the risk that the wear-resistant layer is broken and falls off is reduced. The transition layer is formed through multiple plasma arc surfacing, so that the transition layer has high toughness and impact resistance, the binding force between the transition layer and the wear-resistant layer is improved, and the service life of the whole wear-resistant coating is prolonged.

The invention provides a method for processing a workpiece, plasma equipment and a semiconductor workpiece, and relates to the technical field of semiconductor equipment. The method for processing the workpiece comprises the following steps: placing the workpiece to be processed on a tray of a reaction chamber; heating the surface of the workpiece to a target temperature; gas is conveyed to the reaction chamber, the gas is excited to form plasma, the plasma is conveyed to the surface of the workpiece, and free radical substances in the plasma make contact with the metal layer of the heated workpiece; the metal layer comprises at least one of a tungsten layer, a titanium nitride layer, a copper layer, a molybdenum layer and a cobalt layer. Residual impurities or oxides of the metal layer can be reduced, the resistivity of the metal layer of the workpiece can be reduced, and the purpose of workpiece surface treatment is achieved.

The invention belongs to the technical field of metallurgy, and particularly relates to a smelting method of low-titanium high-carbon chromium bearing steel. Through full-process titanium content control, the method comprises the following steps: adopting low-titanium waste steel and molten iron, and controlling the alkalinity of the electric furnace slag to be 2.0-4.0 and the FeO + MnO content to be 20-30%; slag is strictly stopped during tapping, and the slag discharge amount is controlled to be smaller than or equal to 3 kg per ton of steel; after tapping, adding a low-titanium ferrochrome alloy, standing, and removing titanium-containing top slag; during LF refining, a low-titanium iron alloy, a carburant and a diffusion deoxidizing agent are used, and a barium composite slag modifier composed of BaO, CaO, Al2O3 and rare earth oxide is added; rH is matched with vacuum degassing and soft argon blowing stirring; and during continuous casting, double-layer crystallizer casting powder composed of low-oxidability lower-layer slag and CaO2-containing upper-layer covering slag is adopted. Through the synergistic effect of the links, the titanium content of the rolled metal is stably controlled to be 0.001% or below finally, titanium nitride inclusions are effectively reduced, and the fatigue life of the bearing steel is remarkably prolonged.

A glass article comprising a photocatalytic coating including a titanium nitride layer and an outer titanium oxide layer, preferably at least partially in anatase form, said article being configured to impart a blue colour in transmission to a multiple glazing unit in which it constitutes the outer face, said multiple glazing unit further comprising a low-emissivity coating on another face of said multiple glazing unit, in particular face 2 or 3.

This invention relates to the field of heat exchange materials technology, and discloses a high-temperature, high-pressure nano-conductivity heat exchange material. The heat exchange material comprises a metal matrix, a linearly distributed metal-ceramic gradient transition layer, and a nano-composite ceramic surface layer. The surface layer consists of 90-95 parts of nano-alumina and zirconium oxide composite powder and 5-10 parts of cubic phase nano-titanium nitride powder. The former is fused and stacked to form a continuous ceramic matrix, while the latter is monodispersed and anchored within it, with adjacent particles in contact. The heat exchange material is prepared by gradient layer spraying with a linearly decreasing plasma current as the ceramic composition increases, followed by back-side cooling of the matrix. The surface layer is sprayed using a coaxial air knife in a reducing atmosphere combined with a low-enthalpy jet to inhibit oxidation and vacuum diffusion annealing. This invention synergistically regulates the above-mentioned structure and interface state to achieve a balance between high thermal conductivity, excellent corrosion resistance, and high bonding strength, which helps extend the service life of heat exchange components under high-temperature and high-pressure environments.

Aspects of the present disclosure generally relate to methods and apparatuses for processing transparent substrates, such as glass substrates. In one implementation, a film stack for an optical assembly includes a glass substrate including a first surface and a second surface. The film stack includes an assembly function layer formed on the first surface, a hardmask layer formed on the assembly function layer, and a substrate identification layer formed on the hardmask layer. The hardmask layer includes one or more of chromium, ruthenium, or titanium nitride. The film stack includes a backside layer formed on the second surface. The backside layer formed on the second surface includes one or more of a conductive layer or an oxide layer.

The present disclosure relates to resistive random-access memory (RRAM) devices. In some embodiments, an RRAM device includes: a first electrode including a metal nitride; a second electrode comprising a first conductive material; and a switching oxide layer positioned between the first electrode and the second electrode. The switching oxide layer includes at least one transition metal oxide. In some embodiments, the metal nitride in the first electrode includes titanium nitride and / or tantalum nitride. The first electrode does not include a non-reactive metal, such as platinum (Pt), palladium (Pd), etc.

To provide a titanium nitride film with a low specific resistance.SOLUTION: A method of forming a titanium nitride film includes: forming the titanium nitride film by alternately repeating supplying a raw material gas, which contains a titanium compound including chlorine and titanium, to a substrate accommodated in a processing container, and supplying a reaction gas, which contains a nitrogen compound including nitrogen and reactive with the titanium compound to form titanium nitride, to the substrate. The process of forming the titanium nitride film is executed under a condition in which a pressure in the processing container is set within a range of 2.7-12.6 kPa so that a specific resistance of the titanium nitride film becomes 57 μΩ cm or less.SELECTED DRAWING: Figure 4

The disclosed technology generally relates to semiconductor structures and their fabrication, and more particularly to diffusion barrier structures containing Ti, Si, N and methods of forming same. A method of forming an electrically conductive diffusion barrier comprises providing a substrate in a reaction chamber and forming a titanium silicide (TiSi) region on the substrate by alternatingly exposing the substrate to a titanium-containing precursor and a first silicon-containing precursor. The method additionally comprises forming a titanium silicon nitride (TiSiN) region on the TiSi region by alternatingly exposing the substrate to a titanium-containing precursor, a nitrogen-containing precursor and a second silicon-containing precursor. The method can optionally include, prior to forming the TiSi region, forming a titanium nitride (TiN) region by alternatingly exposing the substrate to a titanium-containing precursor and a nitrogen-containing precursor.

The invention provides an AR diffraction waveguide, a preparation method thereof and an AR optical device. The AR diffraction waveguide comprises a substrate, a composite transition layer and a titanium dioxide functional layer, wherein the composite transition layer and the titanium dioxide functional layer are sequentially stacked on the surface of the substrate; the composite transition layer comprises a titanium-containing nitride bonding layer, a nitrogen-containing titanium oxygen gradient buffer layer and a titanium dioxide seed crystal adaptation layer which are sequentially stacked, and the titanium-containing nitride bonding layer is arranged on one side close to the substrate. According to the AR diffraction waveguide, the multiple composite transition layers are arranged between the substrate and the titanium dioxide functional layer, the adhesive force of the titanium dioxide functional layer and the substrate can be obviously improved, the optical performance of the AR diffraction waveguide can be improved, and the AR diffraction waveguide is low in preparation cost, high in mass production yield and suitable for large-scale production. And meanwhile, the requirements of low cost, high light transmission efficiency and long service life are met.

This invention discloses a polishing composition and its application in removing titanium nitride layers from semiconductor chips. The polishing composition comprises the following components in parts by weight: 100 parts water, 3-10 parts titanium nitride, and 3-10 parts metal oxide. This invention provides a polishing composition mainly composed of water, titanium nitride, and metal oxide. By using a polishing slurry made of particles of the same material as the sample being polished, the affinity between the slurry and the sample can be ensured, thereby improving polishing efficiency and uniformity, and achieving uniform removal of nanoscale-thick titanium nitride layers. Compared to current acid-based methods of corroding titanium nitride layers, the water-based polishing slurry of this invention does not cause uneven corrosion, thus achieving uniform removal of nanoscale-thick titanium nitride layers from a single chip.

The invention relates to the technical field of etching solutions, and particularly discloses a high-selectivity titanium silicon nitrogen / titanium nitride etching solution. The cleaning agent comprises the following raw materials in percentage by mass: 30-60% of an acidic medium; 10-25% of a diffusant; 1-10% of a complexing agent; 0.1-1% of an oxidizing agent; 0.01%-0.1% of a stabilizing agent; the complexing agent is a sulfur-containing compound. According to the etching solution, the oxidizing agent and the sulfur-containing compound are added to serve as complexing agents, the etching solution has a high selection ratio for TiSiN and TiN etching, when it is guaranteed that the titanium-silicon-nitrogen etching rate is 10-20 A / min, the titanium-silicon-nitrogen / titanium nitride selection ratio is increased to 50 or above, and the etching rate is stable.

Provided is a plasma processing method capable of achieving flat etching process while suppressing vertical etching.The plasma processing method for plasma-etching a titanium nitride (TiN) film that forms a metal gate and contacts an insulating film on both sides includes the step of etching the titanium nitride (TiN) film by using plasmas that are generated by using a mixed gas of boron trichloride (BCl3) gas, nitrogen (N2) gas, and nitrogen trifluoride (NF3) gas and are generated by radio-frequency power modulated by a pulse, wherein the pulse has a first period with a first amplitude as its amplitude and a second period with a second amplitude as its amplitude and wherein the second amplitude is greater than 0 and less than the first amplitude.

The invention relates to the technical field of multi-layer solar film preparation, in particular to a nano titanium nitride solar film and a preparation method thereof.The nano titanium nitride solar film comprises a release film layer, an adhesive layer, a substrate layer, a functional core layer, an ultraviolet-proof layer and a wear-resistant explosion-proof layer which are sequentially compounded from bottom to top; the release film layer is a polyethylene glycol terephthalate release film with the thickness of 25-30 [mu] m, and the surface of the release film layer is coated with an organic silicon release agent with the thickness of 3-5 [mu] m. According to the nano titanium nitride solar film, a nano titanium nitride and indium tin oxide composite system is adopted, a double-target synchronous sputtering process is combined, high infrared reflection efficiency is guaranteed, nano titanium nitride dispersion liquid and an anti-aging compound are further introduced, aging of an adhesive layer is remarkably delayed, degumming and color fading are avoided, meanwhile, the rheological property and bonding strength are optimized, and the service life of the solar film is prolonged. The coating is suitable for large-area spraying to be attached to curved glass, the construction hollowing rate is lower than 0.3%, the edge warping risk is remarkably reduced, and dependence on manual operation is reduced.

The invention discloses an electrostatic chuck aluminum nitride face plate material and a preparation method thereof.The preparation method comprises the following steps that firstly, aluminum nitride powder, titanium nitride powder, titanium oxide powder and yttrium oxide powder are subjected to vacuum drying, and the mass ratio of the aluminum nitride powder to the titanium nitride powder to the yttrium oxide powder is (90-100): (3-15): (1-3): (2-6); step 2, performing wet mixing and ball milling on the product obtained in the step 1, drying, grinding and sieving to obtain uniformly dispersed ceramic powder; step 3, filling a mold with the ceramic powder, pre-pressing, maintaining the pressure when the pressure is increased to 30-100 MPa to obtain a ceramic pre-pressed blank, and carrying out vacuum drying to obtain a blank body; and 4, carrying out hot pressed sintering on the green body, applying a load when the temperature rises to 1600-1800 DEG C, and carrying out furnace cooling. The material of the aluminum nitride face plate of the electrostatic chuck is an aluminum nitride / titanium nitride ceramic material. The process engineering adopted by the invention is compact, and hydrolysis of aluminum nitride in air is reduced; the mechanical strength is excellent, and the resistivity is stable.

A rolling roll according to an embodiment of the present invention comprises: a roll base material; and a chromium-containing plating layer which is formed on the roll base material and in which the maximum length of cracks formed on the surface thereof is 5 µm or less. A rolling roll according to another embodiment of the present invention comprises: a roll base material; a chromium-containing plating layer formed on the roll base material; and a first coating layer formed on the chromium-containing plating layer and containing a titanium nitride. A method for manufacturing a rolling roll according to another embodiment of the present invention comprises the steps of: forming surface recesses and projections on the surface of a roll base material; forming a chromium-containing plating layer on the roll base material by using a plating solution containing a chromium-containing raw material and sulfuric acid; and applying a metal nitride onto the chromium-containing plating layer. In the step of forming the chromium-containing plating layer, the plating solution further contains a sulfonic acid-based organic catalyst, or plating is performed in a state in which the plating solution has been heated to 65-90°C. A method for manufacturing a secondary battery according to another embodiment of the present invention comprises the steps of: forming an electrode active material layer on a current collector; and rolling the electrode active material layer using said rolling roll.

This application provides a method for avoiding slit defects in mask patterns during self-aligned dual-patterning processes, comprising: Step 1, providing a substrate, and sequentially forming an interlayer dielectric layer, an anti-reflection coating, a titanium nitride layer, a TEOS layer, and a patterned sacrificial layer on the substrate; Step 2, forming a mask layer within the gaps between the patterned sacrificial layers; Step 3, after removing the patterned sacrificial layers, performing a first etching using the mask layer as a mask until the exposed TEOS layer is removed, wherein the mask layer is not etched through during the first etching process; Step 4, performing a second etching using the TEOS layer as a mask until the exposed titanium nitride layer is removed, thereby forming the mask pattern. According to this application, the generation of slit defects can be effectively avoided, while simultaneously expanding the CD window (distance between lithographic patterns).

The application discloses a preparation method of a multi-material photocuring 3D printing integrated titanium nitride silicon carbide endothermic heat storage heterogeneous ceramic framework, which comprises the following steps: preparing silicon carbide ceramic slurry containing photocuring resin, dispersant, photoinitiator and sintering aid; preparing titanium nitride ceramic slurry containing photocuring resin, dispersant, photoinitiator and sintering aid; adding the silicon carbide ceramic slurry and the titanium nitride ceramic slurry into slurry cavities of a multi-material photocuring 3D printer respectively, inputting model information of the titanium nitride silicon carbide heterogeneous ceramic framework into the printer for photocuring printing, and obtaining the titanium nitride silicon carbide heterogeneous ceramic framework after defatting and sintering treatment. The titanium nitride silicon carbide heterogeneous ceramic framework prepared by the method has the functions of high-efficiency light-heat conversion endothermy, high-efficiency heat energy conduction, high-efficiency heat energy charging and discharging and high-density molten salt load heat storage, and has the effect of omnibearing improvement of the light-heat utilization efficiency of a solar thermal power station.