612 results about "Titanium nitride" patented technology

The invention discloses a semiconductor chip, a preparation method of a metal interconnection layer and the metal interconnection layer. The semiconductor chip comprises a semiconductor substrate, and a plurality of device structures are formed on the semiconductor substrate; the metal interconnection layer is located above the semiconductor substrate and used for connecting a plurality of device structures, and the metal interconnection layer at least comprises a first titanium layer located above the semiconductor substrate, a second titanium layer located above the semiconductor substrate and a third titanium layer located above the semiconductor substrate; a first titanium nitride layer over the first titanium layer; a metal layer over the first titanium nitride layer; the at least two groups of composite barrier layers are positioned above the metal layer; each group of composite barrier layers comprises a second titanium layer and a second titanium nitride layer located above the second titanium layer; the thickness of the second titanium nitride layer in each group of composite barrier layers is smaller than a first preset thickness; and the sum of the thicknesses of the second titanium nitride layers in each group of composite barrier layers is equal to or greater than a second preset thickness. According to the semiconductor chip, the metal residue defect on the surface of the semiconductor substrate is reduced while the thickness requirement is met.

The invention discloses a composite positive electrode material which comprises a layered oxide and a coating layer, the general formula of the layered oxide is NaMe < 1-x > Al < x > O < 2 >, Me is one or more of nickel, iron, manganese and cobalt, and x is greater than 0; the coating layer is coated outside the layered oxide, the coating layer sequentially comprises a first coating layer, a second coating layer and a third coating layer from inside to outside, the first coating layer is titanium aluminum carbide, the second coating layer is titanium nitride, the third coating layer is nitrogen-doped polymeric porous carbon, and the composite positive electrode material forms an Al-N bond. The invention also discloses a positive plate with the composite positive electrode material and a sodium ion battery. The cyclic expansion rate can be effectively controlled while the cyclic electrical performance is guaranteed.

The invention provides a high-strength antibacterial implant material and a preparation method thereof. The implant material comprises a composite matrix, a graphene-titanium nitride composite coating and a tantalum-silver composite coating, wherein the graphene-titanium nitride composite coating and the tantalum-silver composite coating are sequentially arranged on the surface of the composite matrix from inside to outside; wherein the graphene-titanium nitride composite coating is of a multi-layer alternating structure formed by alternately stacking graphene layers and titanium nitride layers; the tantalum content and the silver content in the tantalum-silver composite coating are in opposite gradient changes. The mechanical strength and the antibacterial property of the implant material are remarkably improved through the multi-layer alternate structure design, the hardness and the biocompatibility of the material are enhanced through the graphene-titanium nitride composite coating, and the implant material is endowed with the antibacterial property and the corrosion resistance through the tantalum-silver composite coating; the implant material has long-acting antibacterial property and biological safety while keeping high strength, so that the implant material is widely applied to the medical implant fields of orthopedics, dentistry and the like.

The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method comprises forming a diffusion barrier comprising TiSiN having a modulus exceeding 290 GPa and a Si content exceeding 2.7 atomic % by exposing a semiconductor substrate to one or more first deposition phases alternating with one or more second deposition phases. Exposing the semiconductor substrate to the one or more first deposition phases comprises alternatingly exposing the semiconductor substrate to a titanium (Ti) precursor and a nitrogen (N) precursor. Exposing the semiconductor substrate to the one or more second deposition phases comprises sequentially exposing the semiconductor substrate to the Ti precursor, followed by a silicon (Si) precursor, followed by the N precursor.

The application discloses a high-temperature-resistant and high-barrier composite film and a preparation method thereof, and relates to the technical field of layered products, which comprises A, B and C layers in sequence; the A layer comprises a temperature-resistant layer, a substrate layer and a barrier layer in sequence; the B layer comprises a substrate layer, a connecting layer, a barrier layer, an aluminum plating layer and a protective layer in sequence; the C layer is a heat-sealing layer; the preparation raw materials of the temperature-resistant layer material comprise aluminum oxide and titanium nitride; the preparation raw materials of the barrier layer material comprise ethylene-vinyl alcohol copolymer, succinamic acid, furoinic acid and carbon nanotubes; and the preparation raw materials of the heat-sealing layer material comprise titanium carbide, high-density polyethylene, metallocene polyethylene and zinc stearate. The high-temperature-resistant and high-barrier composite film provided by the application has excellent high-temperature resistance and barrier properties.

The invention provides a PCBN composite material and a preparation method thereof.The preparation method comprises the steps that two or more of zirconium oxide, titanium nitride, silicon nitride, titanium diboride, silicon carbide, titanium carbide, titanium carbonitride, aluminum oxide and aluminum nitride are mixed, and ceramic composite powder is prepared; the CBN micro powder and a metal binding agent are subjected to ball milling and mixing, and CBN pre-composite micro powder is prepared; mixing the CBN pre-composite micro powder with the ceramic composite powder to obtain a premix, placing the premix in a mold for pre-pressing to obtain a blank piece, and then assembling the blank piece for sintering to obtain a PCBN composite material; the mass percentage content of the ceramic composite powder is 5%-40%, the mass percentage content of the metal binding agent is 15%-30%, and the mass percentage content of the CBN micro powder is 45%-65%. According to the method, the toughness and the stability of the PCBN cutter can be improved on the premise of low content of CBN (Cubic Boron Nitride).

Methods of forming a metal gate structure of a stacked multi-gate device are provided. A method according to the present disclosure includes depositing a titanium nitride (TiN) layer over a channel region that includes bottom channel layers and top channel layers, depositing a dummy fill layer to cover sidewalls of the bottom channel layers, after the depositing of the dummy fill layer, selectively forming a blocking layer over the TiN layer along sidewalls of the top channel layers, selectively removing the dummy fill layer to release the bottom channel layers, selectively depositing a first work function metal layer to wrap around each of the bottom channel layers, forming a gate isolation layer over a top surface of the first work function metal layer, removing the blocking layer, releasing the top channel layers, and selectively depositing a second work function metal layer to wrap around each of the top channel layers.

The invention belongs to the technical field of solid-state lithium metal batteries. The invention provides a mixed ion / electron conductor intermediate layer with a directional double-layer structure. The mixed ion / electron conductor intermediate layer comprises a titanium nitride nanotube array and lithium ion conductor layers deposited on the inner surface and the upper surface of the titanium nitride nanotube array. The lithium ion conductor layer on the upper layer of the directional double-layer structure mixed ion / electron conductor intermediate layer has high lithium ion conductivity and low electron conductivity, and can inhibit nucleation of lithium on an electrolyte interface and growth of lithium dendrites; the lower layer can guide lithium to realize uniform deposition and stripping in the nanotubes through a creep mechanism, and stress is effectively released, so that the electrochemical performance of the battery is improved; the creep path of lithium deposition stripping can be shortened, and the diffusion and transmission capability of lithium ions can be remarkably enhanced by matching with a lithium ion conductor with a high lithium ion diffusion rate; the middle layer is thin and controllable in thickness, the overall energy density of the battery is hardly reduced, and the application prospect is good.

The invention discloses a double-layer waveguide 2 * 2 microring optical switch, an optical switch array thereof and an optical signal processing method, and belongs to the technical field of optical communication devices. Aiming at the technical problem that a traditional micro-ring optical switch is difficult to realize a large free spectral range and low-loss transmission at the same time, the invention provides an innovative structure combining a silicon nitride micro-ring resonator and an annular Bragg grating, and the outer side of the silicon nitride micro-ring resonator is nested with the annular Bragg grating; and a light field forbidden band is constructed to suppress a light field radiated outwards by the resonator, so that strong light field constraint is realized to remarkably reduce bending loss. A silicon-silicon nitride double-layer waveguide interlayer coupling technology is adopted, the lower layer is a silicon coupling waveguide, the upper layer is a silicon nitride micro-ring resonator and concentric annular grating structure, and a titanium nitride micro-heater is integrated to adjust the resonant wavelength. The invention effectively solves the technical problem that the silicon nitride micro-ring optical switch is difficult to obtain in the aspects of large free spectral range and low loss at the same time, and is a key technical support for constructing a high-integration wavelength selection optical switching chip.

The invention belongs to the technical field of energy and electrochemical catalysis, and discloses a titanium nitride / transition metal phosphide heterojunction electrode with a nano array structure, a preparation method of the titanium nitride / transition metal phosphide heterojunction electrode and application of the titanium nitride / transition metal phosphide heterojunction electrode to seawater electrolysis for hydrogen production. The electrode comprises titanium nitride grown on a conductive substrate and transition metal phosphides (such as cobalt phosphides, nickel phosphides, iron phosphides or a combination thereof) loaded on the surface of the titanium nitride. According to the composite electrode, a titanium dioxide nano array is synthesized on a conductive substrate through seed crystal assisted solvothermal, and a titanium nitride electrode is obtained through high-temperature nitridation; and then carrying out hydrothermal loading on a transition metal precursor and carrying out low-temperature phosphating treatment to obtain the titanium nitride / transition metal phosphide composite electrode. By combining high conductivity and corrosion resistance of titanium nitride and high catalytic activity and electrochemical stability of transition metal phosphide, the technical problems that a traditional electrode is easy to corrode and poor in catalytic stability in a seawater environment are solved; the synthesized titanium nitride / transition metal phosphide composite electrode is of a multi-scale graded nano array structure, and the micro-nano composite morphology of the composite electrode can be used for inducing the turbulence effect of an electrolyte, so that hydrogen evolution bubble separation is accelerated, and interface adsorption of precipitates such as magnesium hydroxide / calcium hydroxide is inhibited. Through the innovative hierarchical heterostructure design, an efficient, low-cost and long-life electrode solution is provided for direct hydrogen production from seawater, and the method has a wide industrial application prospect.

The invention discloses a TEC photo-thermal stable thermoelectric power generation device and a preparation method thereof, and relates to the technical field of thermal power generation, and the TEC photo-thermal stable thermoelectric power generation device comprises an energy capture module, a thermoelectric power generation module and a dual-mode heat dissipation module which are sequentially arranged from top to bottom; the energy capture module comprises a silicon substrate with a micro-cone array on the surface, a phase change energy storage buffer dielectric layer coated on the surface of the micro-cone array, and a silicon carbide film layer, a titanium nitride film layer and a titanium nitride nanoparticle layer which are sequentially arranged on the surface of the phase change energy storage buffer dielectric layer; the thermoelectric power generation module comprises a corrugated metal composite substrate and a plurality of thermoelectric units arranged on the surface of the metal composite substrate. The bottleneck that a traditional single material is insufficient in solar spectrum coverage is broken through, the solar energy utilization efficiency is greatly improved, excessive heat generated by sudden change of instantaneous illumination intensity can be effectively absorbed, and continuous and stable heat source input is provided for thermoelectric conversion.

The invention discloses a semiconductor device and a manufacturing method thereof. A semiconductor device includes a plurality of memory cells, each memory cell including: a memory layer; a first selector layer formed in an upper portion or a lower portion of the memory layer to select the memory layer; a second selector layer for selecting a memory layer; and an interface layer disposed between the first selector layer and the second selector layer, in which the first selector layer and the second selector layer include an amorphous silicon layer including one or more dopants selected from the group including Group 13 elements, Group 14 elements, and Group 15 elements of the periodic table, and wherein the interface layer is selected from the group comprising silicon oxide, silicon carbonitride, silicon carbonitride, silicon nitride, tantalum nitride, titanium nitride, aluminum nitride, and hafnium nitride.

The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a diffusion barrier comprising TiSiN comprises exposing a semiconductor substrate to one or more first deposition phases alternating with one or more second deposition phases. Exposing the semiconductor substrate to the one or more first deposition phases comprises alternatingly exposing the semiconductor substrate to a titanium (Ti) precursor and a nitrogen (N) precursor. Exposing the semiconductor substrate to the one or more second deposition phases comprises sequentially exposing the semiconductor substrate to the Ti precursor and a silicon (Si) precursor without an intervening exposure to the N precursor therebetween, followed by exposing the semiconductor substrate to the N precursor.

The invention provides a titanium nitride film growth method and a growth machine, and the growth method comprises the steps: S1, depositing a titanium nitride film with a set thickness H0 on the surface of a wafer, and then carrying out the impurity removal and repair; s2, the step S1 is repeated until the deposition thickness of the titanium nitride thin film is the thickness H; h is greater than H0. According to the invention, the grown titanium nitride film has fewer impurities, and the bulk resistance is reduced.

The invention relates to a multistage self-anchoring flexible deep brain electrical stimulation electrode and a preparation method thereof, and relates to the technical field of medical instruments. A bionic root system-octopus whisker composite framework including a main electrode base, a second-stage fractal arm and a third-stage self-anchoring tail end is adopted, intelligent materials such as carbon nano tube / PDMS composite fibers, temperature-sensitive PNIPAAm hydrogel and a degradable PLGA-gelatin composite material are fused, and a mechanical lock catch and biological fusion dual-anchoring mechanism is constructed. The distributed electrode array comprises platinum-iridium alloy, graphene / PDMS and a titanium nitride nano electrode, and cross-scale stimulation from the nuclear group level to the single cell level is achieved. The intelligent regulation and control system solves the problems of brain tissue displacement and chronic inflammation through a pressure feedback degradation and flexible interconnection technology. Compared with a traditional product, the contact area of the electrode is increased by 5-8 times, the stimulation precision reaches the single cell level, and the electrode is suitable for long-term deep brain stimulation treatment of nerve diseases such as Parkinson's disease and epilepsy and has remarkable clinical application value.

The invention provides a trench manufacturing method, which comprises the following steps of: providing a substrate, and sequentially forming an oxide layer and a titanium nitride layer on the substrate; the titanium nitride layers in the different areas are oxidized to different degrees, so that the titanium nitride layers with different thicknesses are oxidized to form titanium oxide layers, and the thickness of the oxidized titanium nitride layers is larger than or equal to zero and smaller than or equal to the thickness of the titanium nitride layers; and etching the titanium oxide layer or / and the titanium nitride layer in each region, the oxide layer below the titanium nitride layer and the substrate in sequence to form grooves with different depths. According to the method, the titanium nitride layers in different areas are oxidized to different degrees, so that the titanium nitride layers with different thicknesses are oxidized to form the titanium oxide layers, namely, the thicknesses of the titanium oxide layers formed in the areas are different, the etching rates of the titanium nitride layers and the titanium oxide layers are different, and the thicker the titanium oxide layers are, the slower the etching is; the depth of the formed groove is shallower, so that grooves with different depths can be formed in the same etching step.

The invention discloses a cutter casting method for reducing cutter abrasion and prolonging the service life of a cutter, and belongs to the technical field of cutter casting. In order to solve the problems that a high-carbon high-alloy steel tool is uneven in matrix structure, large in heat treatment residual stress, prone to tipping of a cutting edge, poor in coating interface bonding force and the like, the method comprises the steps that a high-carbon high-alloy steel blank is smelted and then poured, the matrix structure is homogenized through multi-stage heat treatment, and high-dislocation-density martensite is formed; and the cutting edge of the quenched cutter base body is subjected to rounding treatment, and then a titanium nitride bottom layer, a titanium aluminum nitride middle layer and a diamond-like carbon top layer are sequentially deposited to form a multi-layer coating. According to the method, through smelting parameter optimization, multi-stage heat treatment, cutting edge rounding and multi-layer coating structure design, the hardness and toughness of a cutter base body are effectively improved, the bonding strength of the coating is enhanced, and stress concentration and frictional wear in the cutting process are reduced. The method is mainly used in the field of metal cutting machining, can significantly prolong the service life of the cutter, and improves the machining efficiency and quality.

The present invention addresses the problem of providing a tandem solar battery (1) having a simple configuration and exceptional battery performance. A tandem solar battery (1) that solves the aforementioned problem includes a first solar battery cell (CB1) that includes a first light absorption layer (10) containing n-type or p-type crystal silicon, a titanium oxide layer (31) that is disposed on the first light absorption layer (10) and contains amorphous titanium oxide, an intermediate layer (32) that is disposed adjacent to the titanium oxide layer (31) and contains tin oxide or titanium nitride having a higher nitrogen composition than the titanium oxide layer (31), and a second solar battery cell (CT1) disposed on the intermediate layer (32).

To provide a semiconductor device capable of suppressing reaction between a semiconductor material of a semiconductor region and a metal material of an electrode, and to provide a method of manufacturing the same.SOLUTION: A semiconductor device according to an embodiment includes a first electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a gate electrode, a fourth semiconductor region of the second conductivity type, a second electrode, and a third electrode. The second semiconductor region is provided on the first region of the first semiconductor region. The gate electrode faces the second semiconductor region via the gate insulating layer. The fourth semiconductor region is provided on the second region of the first semiconductor region. The second electrode is provided on the second and third semiconductor regions via the first contact. The third electrode is provided on the fourth semiconductor region via a second contact. The first contact and the second contact include a titanium-containing layer, a titanium nitride-containing layer provided on the titanium-containing layer, and a tungsten-containing layer provided on the titanium nitride-containing layer.SELECTED DRAWING: Figure 6

The present application relates to a kind of high-temperature-resistant inductive angle sensor, belong to angle sensor technical field.The sensor includes: gradient composite ceramic substrate Al2O3-ZrO2-Al2O3, realize thermal expansion coefficient gradient matching by intermediate layer zirconium oxide doped yttrium oxide, reduce thermal stress cracking risk;Substrate surface is formed with micro-arc oxidation porous layer in turn titanium nitride nanocrystalline layer, improve surface bonding force;Atomic layer deposition process is used to prepare TiN or TiN / Ag composite film coil, improve temperature resistance;Through electron beam welding and transient liquid phase bonding composite process coil and circuit;Insulating encapsulation layer is made of boron nitride nanosheet and high-temperature-resistant resin, improve thermal conductivity and breakdown field strength.The present application is through gradient substrate design, thin film coil integration and composite process optimization, solves the thermal stress failure of traditional inductive sensor under high temperature, coil oxidation and insulation aging problem, suitable for angle measurement under extreme environment.

The invention belongs to the technical field of drill bits, particularly relates to a special drill bit for a honeycomb aluminum plate, and aims to solve the problems that when an existing drill bit is used for machining a honeycomb aluminum material, the machining precision and the surface quality are often difficult to guarantee, and meanwhile, the machining efficiency is low. The drill bit head is connected to one end of the drill bit main body; the main cutting edge is arranged on the drill bit head; the first auxiliary blade and the second auxiliary blade are both arranged on the drill bit head and used for trimming cutting edges, the outer side of the drill bit head is coated with a wear-resistant coating, and the wear-resistant coating is a composite coating composed of titanium nitride and tungsten carbide. By means of the combined design of the stepped main cutting edge, the first auxiliary edge and the second auxiliary edge and the optimized geometric parameters and wear-resistant coating technology, efficient and accurate machining of the honeycomb aluminum material is achieved, machining defects are reduced, and machining quality and efficiency are improved.

The invention discloses an aerogel heat absorbing body coating applied to a solar heat collector. The heat absorbing body coating is of a multi-layer composite structure and sequentially comprises a core heat absorbing layer and a packaging protection layer from inside to outside. The core heat absorption layer is a composite coating formed by dispersing titanium nitride nanoparticles in a silicon dioxide aerogel matrix. Sunlight absorption is enhanced through the titanium nitride nanoparticles, the thermal emissivity is reduced through the aerogel matrix, and the photothermal conversion efficiency is remarkably improved; and the aluminum oxide packaging layer effectively blocks water and oxygen erosion, so that the coating is stable in performance and excellent in aging resistance in a high-temperature and high-humidity environment, and the service life is remarkably prolonged.

Methods of filling a gap in a semiconductor structure are presented. A titanium nitride and sacrificial silicon nitride spacer is deposited onto a line pattern comprising a trench between two lines of the line pattern. The titanium nitride and sacrificial silicon nitride spacer is etched to leave titanium nitride and sacrificial silicon nitride spacer covering sides of the two lines within the trench. An organic planarization layer is applied over the line pattern and the titanium nitride and sacrificial silicon nitride spacer. A pillar cut is cut through the organic planarization layer and into the trench to form a gap within the trench. The gap is filled with silicon oxide.

The application discloses a preparation method and application of an oxygen-evolving electrocatalyst of iridium oxide anchored by surface titanium oxygen species. The catalyst is obtained by electro-oxidizing a titanium nitride supported metal iridium cluster pre-catalyst. The surface titanium oxygen species is obtained by electrochemical reconstruction of titanium nitride, and the iridium oxide is obtained by electro-oxidizing a metal iridium cluster. When the catalyst is used for an anode oxygen evolution reaction, the catalyst has excellent catalytic activity and significantly improved stability. Compared with existing catalysts, the catalyst provided by the application is obtained by electro-oxidizing a pre-catalyst. In a PEM electrolytic cell, the titanium nitride carrier in the pre-catalyst plays a role of a pore-forming agent in the electro-oxidation dissolution process, and the catalytic layer is spontaneously thickened, thereby solving the problems of poor uniformity and mechanical stability of a super-thin catalytic layer electrode of a PEM water electrolysis cell, and more easily realizing large-scale industrial application under an ultra-low iridium load.

The application relates to a preparation method of an ultra-low on-resistance MOS tube based on an SGT process, and relates to the technical field of semiconductors; the method comprises the following steps: performing nitrogen source doping deposition on a substrate to form an N-type drift layer; sequentially growing a gallium nitride buffer layer and an aluminum gallium nitride barrier layer on the N-type drift layer, and cooling to room temperature to form a heterojunction; coating a positive photoresist and exposing to define a three-dimensional groove, then developing with a developing solution after hard baking to form a mask, and etching the three-dimensional groove; performing segmented injection in the main groove to form a gradually-changing super junction and performing high-temperature annealing treatment, performing high-dosage arsenic ion injection to form an N + region, depositing aluminum oxide gate medium, magnetron sputtering deposition of titanium nitride to completely fill the groove, then polishing, and then performing electrode preparation, passivation and metal interconnection; gradient doping epitaxy technology is used to realize gradient optimization of the resistance of the drift region, and a three-dimensional cross-groove array is defined on the surface of the heterojunction layer, so that the on-resistance is less than or equal to 5 m omega*mm2 when the breakdown voltage is greater than or equal to 650 V, which is reduced by more than 40% compared with the traditional SGT process.

According to a first aspect of the present invention there is provided a method of coating a bipolar plate, comprising the steps of: providing a bipolar plate wherein at least an outer layer of the bipolar plate comprises metallic titanium; and performing laser nitridation on the bipolar plate so as to form a titanium nitride coating on the outer surface of the bipolar plate. The inventors have found that laser nitridation of a titanium bipolar plate results in a bipolar plate having a high stability TiN coating which has good conformality, chemical stability and / or high conductivity. Furthermore, the formation of the TiN coating by laser nitriding can be well integrated into a manufacturing process of a bipolar plate, such as a roll-to-plate process including a laser welding step, compared to a deposition method known in the prior art, and has the advantages of high efficiency and simplification. The TiN coating on the bipolar plate can be directly used for an electrochemical reactor or can be used as a substrate of a subsequent coating.

The application belongs to the technical field of surface engineering protection, and discloses a transition metal compound composite coating, a preparation method and application thereof; wherein the transition metal compound composite coating is a composite multilayer structure, and comprises n same periodic structures deposited in sequence, and n is greater than or equal to 2; wherein each periodic structure comprises a titanium nitride coating and a niobium nitride coating. The application specifically discloses a high-conductivity strong-corrosion-resistance transition metal compound composite coating, and can solve the technical problems of high cost, high corrosion current density, low corrosion overpotential and poor conductivity in the prior art.

The application provides a ternary positive electrode material, a preparation method and application thereof; the ternary positive electrode material comprises a base and a coating on the surface of the base; the base is a ternary material co-doped with titanium elements and nitrogen elements; and the coating is titanium nitride. In the application, titanium nitride is used as a coating agent and a dopant, so that the Ti elements and the N elements are co-doped into the crystal lattice of the ternary material, and titanium nitride is coated on the surface of the ternary material; the doping and the coating have a synergistic effect, so that the prepared ternary positive electrode material has better cycle rate performance and high-temperature storage performance.

The application belongs to the technical field of catalysts, and provides a titanium nickel nitride-based palladium catalyst, a preparation method and application thereof. The method comprises the following steps: mixing titanium tetrachloride, nickel acetate tetrahydrate and ethanol under an ammonia atmosphere, and performing a reaction to obtain a complex powder; performing a nitriding reaction on the complex powder under an ammonia atmosphere to obtain titanium nickel nitride nanoparticles; mixing the titanium nickel nitride nanoparticles, a chloropalladic acid solution, water and a potassium borohydride solution, and performing a reaction to obtain the titanium nickel nitride-based palladium catalyst. The catalyst prepared by the application has a high specific surface area and is composed of two parts, namely a titanium nickel nitride nanoparticle carrier and a supported Pd nanocluster. Among them, nickel atoms are doped between the titanium nitride crystal lattices. The Pd nanocluster is supported on the surface of the TiNiN carrier, and by adjusting the loading amount of Pd atoms, efficient and high-selectivity catalysis of various environmental hydrogenation catalytic processes can be realized.

The invention provides a method for forming a titanium / titanium nitride film. The method comprises the following steps of: depositing a titanium metal layer on a semiconductor substrate; and performing thermal annealing treatment on the semiconductor substrate deposited with the titanium metal layer in a nitrogen-containing atmosphere, so that the titanium metal layer reacts with the semiconductor substrate to form a metal silicide, and meanwhile, the titanium metal layer reacts with the nitrogen-containing atmosphere to generate a titanium nitride layer. The silicide contact layer and the titanium nitride barrier layer are formed at the same time through the in-situ reaction, and the technological process is simplified. The titanium nitride layer formed by the method is thin, stress distribution of the wafer is effectively improved, the problem of wafer warping caused by the fact that the titanium nitride layer is too thick in a traditional process is solved, meanwhile, it is guaranteed that a silicon interface reacts sufficiently, contact resistance is reduced, and consistency of electrical parameters of a device is improved.