853 results about "Titanium nitride" patented technology

The invention provides a titanium nitride doped fluoride-free photo-thermal super-hydrophobic coating and a preparation method and application thereof.The titanium nitride doped fluoride-free photo-thermal super-hydrophobic coating is prepared from polydimethylsiloxane modified titanium nitride, hydrophobic nanoparticles and an adhesive and has the excellent local surface plasma resonance effect and photo-thermal effect; meanwhile, the coating is of a rough and uniform micro-nano hierarchical structure, dynamic water can be efficiently removed, icing can be delayed, the surface temperature can reach 12 DEG C only through irradiation of one sunlight intensity in the environment of-30 DEG C, and rapid deicing can be achieved. The coating has good functions of self-cleaning, anti-icing, deicing, defrosting and the like, renewable solar energy is utilized, and the coating is green, environment-friendly, energy-saving and emission-reducing. Meanwhile, the super-hydrophobic surface of the coating can effectively delay icing and inhibit ice adhesion. According to the coating, organic combination of an active deicing strategy and a passive deicing strategy is achieved based on the synergistic effect of the super-hydrophobicity and the photothermal effect.

The present application discloses a cell contact structure, a semiconductor device, and a method for fabricating the semiconductor device. The cell contact structure includes a contact layer positioned on a substrate and enclosed by a plurality of bit line structures and a plurality of partition layers; and a liner layer positioned between the contact layer and the substrate, between the contact layer and the plurality of bit line structures, and between the contact layer and the plurality of partition layers. A top surface of the contact layer and a top surface of the liner layer are substantially coplanar. The liner layer includes doped polycrystalline silicon, doped polycrystalline germanium, or doped polycrystalline silicon germanium. The contact layer includes tungsten, titanium, or titanium nitride.

The invention discloses a semiconductor chip, a preparation method of a metal interconnection layer and the metal interconnection layer. The semiconductor chip comprises a semiconductor substrate, and a plurality of device structures are formed on the semiconductor substrate; the metal interconnection layer is located above the semiconductor substrate and used for connecting a plurality of device structures, and the metal interconnection layer at least comprises a first titanium layer located above the semiconductor substrate, a second titanium layer located above the semiconductor substrate and a third titanium layer located above the semiconductor substrate; a first titanium nitride layer over the first titanium layer; a metal layer over the first titanium nitride layer; the at least two groups of composite barrier layers are positioned above the metal layer; each group of composite barrier layers comprises a second titanium layer and a second titanium nitride layer located above the second titanium layer; the thickness of the second titanium nitride layer in each group of composite barrier layers is smaller than a first preset thickness; and the sum of the thicknesses of the second titanium nitride layers in each group of composite barrier layers is equal to or greater than a second preset thickness. According to the semiconductor chip, the metal residue defect on the surface of the semiconductor substrate is reduced while the thickness requirement is met.

The invention belongs to the field of metal processing, and relates to an in-situ self-generated NiMoCoAlTi high-entropy alloy toughened metal ceramic material and a preparation method thereof. According to the invention, Ti (C, N) ceramic is used as a matrix, Ni, Mo, Co, Al and Ti are directly added as binders, and spark plasma coupling high-frequency induction sintering is carried out to obtain the high-temperature-resistant ceramic. The preparation method comprises the following steps: firstly, mixing Ti (C, N), Ni, Mo, Co, Al and Ti, then carrying out ball milling and drying to obtain powder, and carrying out spark plasma coupling high-frequency induction sintering. The method is beneficial to improving the mechanical property of the material, saves the preparation time of the high-entropy alloy powder, and has the advantages of being simple in preparation method, convenient to operate and the like. The obtained titanium carbonitride-based metal ceramic has higher toughness and hardness and excellent antifriction and wear-resisting properties, and can be used for manufacturing high-precision numerical control machine tool guide rails and other wear-resisting and corrosion-resisting parts.

The invention relates to the technical field of wear-resistant materials, in particular to a nano wear-resistant composite material and a preparation method and application thereof, and the nano wear-resistant composite material comprises the following raw materials in parts by weight: 45-50 parts of nano tungsten carbide, 10-15 parts of cobalt powder, 7-11 parts of a modified nano titanium nitride agent, 5-7 parts of nano neodymium oxide, and 4-6 parts of a nano TaC-doped complexing agent. According to the nano wear-resistant composite material, the nano tungsten carbide is matched with the cobalt powder and the nano neodymium oxide, the modified nano titanium nitride agent, the doped nano TaC and the synergist are coordinated and matched, and the raw materials are coordinated and synergistic, so that the wear resistance, the yield strength performance and the fatigue resistance of the obtained nano wear-resistant composite material are coordinated and improved; meanwhile, the product is excellent in performance stability under different degrees of salt corrosion conditions.

The invention relates to the field of material surface treatment, and discloses a silica gel and metal combined treatment process which comprises the following steps: S1, ultra-short pulse laser is adopted to machine a three-dimensional micro-nano composite structure on the surface of a titanium alloy, the structure comprises a periodic groove array and surface nano holes, and the surface roughness Ra of the titanium alloy is larger than or equal to 5 microns; and S2, a titanium nitride transition layer and a siloxane self-assembly molecular layer are sequentially formed on the roughened titanium alloy surface through atomic layer deposition, and a gradient chemical interface is formed. According to the method, the micro-nano composite structure is processed through ultra-short pulse laser, the interface mechanical embedding area is remarkably increased, the two-dimensional rough limitation of a traditional sand blasting process is broken through, deep barb-shaped anchoring is achieved, the anti-stripping capacity is greatly enhanced, gradient chemical bonding is formed by the atomic layer deposition titanium nitride transition layer and the amino self-assembly molecular layer, and the anti-stripping performance is improved. The thermal expansion difference is effectively buffered, and the interface high-temperature resistance is improved.

The invention discloses a composite positive electrode material which comprises a layered oxide and a coating layer, the general formula of the layered oxide is NaMe < 1-x > Al < x > O < 2 >, Me is one or more of nickel, iron, manganese and cobalt, and x is greater than 0; the coating layer is coated outside the layered oxide, the coating layer sequentially comprises a first coating layer, a second coating layer and a third coating layer from inside to outside, the first coating layer is titanium aluminum carbide, the second coating layer is titanium nitride, the third coating layer is nitrogen-doped polymeric porous carbon, and the composite positive electrode material forms an Al-N bond. The invention also discloses a positive plate with the composite positive electrode material and a sodium ion battery. The cyclic expansion rate can be effectively controlled while the cyclic electrical performance is guaranteed.

The invention relates to the field of coatings, and discloses a wear-resistant and corrosion-resistant high-entropy alloy composite coating and a preparation method thereof.The wear-resistant and corrosion-resistant high-entropy alloy composite coating is prepared by depositing functional high-entropy alloy composite powder on the surface of a base body in a laser cladding mode, the functional high-entropy alloy composite powder comprises high-entropy alloy powder, a modified additive and composite ceramic powder, the modified additive is prepared by using urea and titanium tetrachloride as raw materials, growing nano titanium nitride particles on the surface of a silicon carbide nanowire in situ to prepare a nano titanium nitride / silicon carbide nanowire composite material, and then coating a layer of nano titanium dioxide particles on the surface of the nano titanium nitride / silicon carbide nanowire composite material by using tetrabutyl titanate; and the composite ceramic powder is prepared by compounding zirconium carbide, niobium carbide, hafnium carbide and tantalum disilicide. The hardness, wear resistance and corrosion resistance of the high-entropy alloy coating are enhanced by adding the modified additive and the composite ceramic powder.

The invention provides a high-strength antibacterial implant material and a preparation method thereof. The implant material comprises a composite matrix, a graphene-titanium nitride composite coating and a tantalum-silver composite coating, wherein the graphene-titanium nitride composite coating and the tantalum-silver composite coating are sequentially arranged on the surface of the composite matrix from inside to outside; wherein the graphene-titanium nitride composite coating is of a multi-layer alternating structure formed by alternately stacking graphene layers and titanium nitride layers; the tantalum content and the silver content in the tantalum-silver composite coating are in opposite gradient changes. The mechanical strength and the antibacterial property of the implant material are remarkably improved through the multi-layer alternate structure design, the hardness and the biocompatibility of the material are enhanced through the graphene-titanium nitride composite coating, and the implant material is endowed with the antibacterial property and the corrosion resistance through the tantalum-silver composite coating; the implant material has long-acting antibacterial property and biological safety while keeping high strength, so that the implant material is widely applied to the medical implant fields of orthopedics, dentistry and the like.

The present application discloses a cell contact structure, a semiconductor device, and a method for fabricating the semiconductor device. The cell contact structure includes a contact layer positioned on a substrate and enclosed by a plurality of bit line structures and a plurality of partition layers; and a liner layer positioned between the contact layer and the substrate, between the contact layer and the plurality of bit line structures, and between the contact layer and the plurality of partition layers. A top surface of the contact layer and a top surface of the liner layer are substantially coplanar. The liner layer includes doped polycrystalline silicon, doped polycrystalline germanium, or doped polycrystalline silicon germanium. The contact layer includes tungsten, titanium, or titanium nitride.

A memory device includes a bit line structure disposed over a semiconductor substrate, and a lower capacitor contact disposed in and extending above the semiconductor substrate. The lower capacitor contact includes polysilicon. The memory device also includes an upper capacitor contact disposed over the lower capacitor contact. The upper capacitor contact includes titanium nitride. The memory device further includes a first spacer layer disposed between the lower capacitor contact and the bit line structure and between the upper capacitor contact and the bit line structure. In addition, the memory device includes a capacitor disposed over the first spacer layer.

The invention discloses a halogen-free low-volatility anti-icing photo-thermal super-hydrophobic coating for the surface of a wind power blade and a preparation method thereof. The coating is prepared by compounding functionalized modified multi-walled carbon nanotubes, functionalized modified nano titanium nitride, polydimethylsiloxane / nano silicon dioxide modified epoxy resin and a curing agent. Wherein the multi-walled carbon nanotubes are subjected to amidation and dual functionalization of lauric acid and 3-aminopropyl triethoxy silane; the surface of the nano titanium nitride is uniformly modified through bionic polydopamine coating; hydroxyl-terminated polydimethylsiloxane and nano SiO are doped into an epoxy resin base material, so that the system is endowed with low surface energy and high weather-resistant binding force. After curing and film forming at room temperature for 24 hours or at 80 DEG C for 2 hours, the water contact angle is greater than or equal to 155 DEG C, the ice adhesion strength is less than or equal to 10 kPa, the photo-thermal temperature is greater than or equal to 40 DEG C, and the performance is not attenuated after 50 times of heating and cooling tests; and after 150-hour damp heat, 500-hour ultraviolet radiation, acid corrosion and abrasive paper friction, the coating does not blister or fall off. The coating disclosed by the invention is green and environment-friendly, low in curing energy consumption, high in photo-thermal temperature rise and strong in super-hydrophobic durability, and can be used for remarkably improving the long-term anti-icing capability of wind power blades in cold and high-humidity regions.

A memory device includes a bit line structure disposed over a semiconductor substrate, and a lower capacitor contact disposed in and extending above the semiconductor substrate. The lower capacitor contact includes polysilicon. The memory device also includes an upper capacitor contact disposed over the lower capacitor contact. The upper capacitor contact includes titanium nitride. The memory device further includes a first spacer layer disposed between the lower capacitor contact and the bit line structure and between the upper capacitor contact and the bit line structure. In addition, the memory device includes a capacitor disposed over the first spacer layer.

The invention provides a preparation method of a molybdenum phosphide / titanium nitride composite material and a battery positive electrode material and a lithium-carbon dioxide battery, and belongs to the technical field of new energy materials. And then a titanium nitride conductor layer is deposited on the molybdenum phosphide by using an atomic layer deposition technology to prepare the molybdenum phosphide / titanium nitride, the molybdenum phosphide is combined as a transition metal phosphide to have stable catalytic performance, and the titanium nitride is used as a conductor to have excellent conductivity. The lithium-carbon dioxide battery positive electrode catalyst with high catalytic activity, high conductivity and excellent stability is obtained through the synergistic effect of the two materials, and when the lithium-carbon dioxide battery positive electrode catalyst is applied to a lithium battery, higher energy density, longer cycle life and better rate capability are shown, so that the overall performance of the battery is improved, and the application prospect is wide. The requirements on high-performance batteries in the fields of electric automobiles, energy storage systems and the like are met.

The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method comprises forming a diffusion barrier comprising TiSiN having a modulus exceeding 290 GPa and a Si content exceeding 2.7 atomic % by exposing a semiconductor substrate to one or more first deposition phases alternating with one or more second deposition phases. Exposing the semiconductor substrate to the one or more first deposition phases comprises alternatingly exposing the semiconductor substrate to a titanium (Ti) precursor and a nitrogen (N) precursor. Exposing the semiconductor substrate to the one or more second deposition phases comprises sequentially exposing the semiconductor substrate to the Ti precursor, followed by a silicon (Si) precursor, followed by the N precursor.

The application discloses a high-temperature-resistant and high-barrier composite film and a preparation method thereof, and relates to the technical field of layered products, which comprises A, B and C layers in sequence; the A layer comprises a temperature-resistant layer, a substrate layer and a barrier layer in sequence; the B layer comprises a substrate layer, a connecting layer, a barrier layer, an aluminum plating layer and a protective layer in sequence; the C layer is a heat-sealing layer; the preparation raw materials of the temperature-resistant layer material comprise aluminum oxide and titanium nitride; the preparation raw materials of the barrier layer material comprise ethylene-vinyl alcohol copolymer, succinamic acid, furoinic acid and carbon nanotubes; and the preparation raw materials of the heat-sealing layer material comprise titanium carbide, high-density polyethylene, metallocene polyethylene and zinc stearate. The high-temperature-resistant and high-barrier composite film provided by the application has excellent high-temperature resistance and barrier properties.

The invention belongs to the technical field of conductive ceramics, and discloses a silicon nitride conductive ceramic material and a preparation method thereof.The method comprises the steps that a yttrium oxide, aluminum oxide and magnesium oxide ternary composite system is arranged, rare earth elements are doped, and a sintering aid is formed; a resistance adjusting agent is composed of a titanium nitride-titanium dioxide core-shell structure and silicon carbide fibers, and the silicon carbide fibers are directionally distributed and arranged in a magnetic field, so that efficient composition of the silicon nitride conductive ceramic material is achieved, and the effects of high bending resistance, high conductivity and low sintering temperature are achieved; forming the slurry; performing spark plasma sintering; conducting network directional regulation and control; the preparation method comprises the steps of raw material mixing and ball milling, post-treatment and performance optimization, a convenient preparation process can be formed, too many tedious steps are not needed, a ball mill used in raw material mixing and ball milling is further provided with a pre-grinding device for pre-grinding the materials, the subsequent ball milling quality is enhanced, and the situation that the materials are not completely ground is avoided.

The invention discloses high-toughness and high-thermal-conductivity aluminum nitride ceramic and a production process, and relates to the related field of aluminum nitride ceramic. Hexagonal boron nitride and Ti3SiC2 composite particles with the surfaces coated with titanium nitride are introduced into aluminum nitride ceramic, a cerium oxide sintering aid and a reasonable organic adding system are supplemented, synergistic improvement of thermal conductivity and toughness is achieved, Ti3SiC2 is subjected to TiN nanometer coating, interface stability and oxidation resistance are enhanced, combination of Ti3SiC2 and a matrix is improved, and the thermal conductivity and toughness of the aluminum nitride ceramic are improved. The fracture toughness and the mechanical strength of the ceramic are obviously improved; meanwhile, aluminum nitride and hexagonal boron nitride construct an efficient thermal conductivity network, so that the material keeps excellent thermal conductivity, the overall scheme is reasonable in structural design and scientific in component matching, and the obtained ceramic is high in density, high in thermal conductivity, excellent in mechanical property and high in thermal shock resistance.

The invention provides a PCBN composite material and a preparation method thereof.The preparation method comprises the steps that two or more of zirconium oxide, titanium nitride, silicon nitride, titanium diboride, silicon carbide, titanium carbide, titanium carbonitride, aluminum oxide and aluminum nitride are mixed, and ceramic composite powder is prepared; the CBN micro powder and a metal binding agent are subjected to ball milling and mixing, and CBN pre-composite micro powder is prepared; mixing the CBN pre-composite micro powder with the ceramic composite powder to obtain a premix, placing the premix in a mold for pre-pressing to obtain a blank piece, and then assembling the blank piece for sintering to obtain a PCBN composite material; the mass percentage content of the ceramic composite powder is 5%-40%, the mass percentage content of the metal binding agent is 15%-30%, and the mass percentage content of the CBN micro powder is 45%-65%. According to the method, the toughness and the stability of the PCBN cutter can be improved on the premise of low content of CBN (Cubic Boron Nitride).

Methods of forming a metal gate structure of a stacked multi-gate device are provided. A method according to the present disclosure includes depositing a titanium nitride (TiN) layer over a channel region that includes bottom channel layers and top channel layers, depositing a dummy fill layer to cover sidewalls of the bottom channel layers, after the depositing of the dummy fill layer, selectively forming a blocking layer over the TiN layer along sidewalls of the top channel layers, selectively removing the dummy fill layer to release the bottom channel layers, selectively depositing a first work function metal layer to wrap around each of the bottom channel layers, forming a gate isolation layer over a top surface of the first work function metal layer, removing the blocking layer, releasing the top channel layers, and selectively depositing a second work function metal layer to wrap around each of the top channel layers.

The invention discloses a growth method, device, equipment and medium of a titanium nitride film, and relates to the technical field of semiconductor film preparation, the growth method of the titanium nitride film comprises the following steps: under a vacuum condition, introducing a titanium-containing precursor and ammonia plasma into an atomic layer deposition reaction chamber in a pulse alternating mode, the deposition cycle of a single titanium nitride film is completed on the surface of the glass substrate in the atomic layer deposition reaction chamber; after each deposition cycle, taking the average value of the thickness values of the plurality of thickness detection points of the titanium nitride film as the reference thickness of the titanium nitride film grown in the deposition cycle; and according to the difference value between the target total thickness of the titanium nitride film and the reference thickness of the deposition cycle, dynamically adjusting the deposition cycle times until the thickness of the titanium nitride film reaches the target total thickness. The method is beneficial to improving the deposition rate of the titanium nitride film and improving the uniformity of the film.

The invention belongs to the technical field of film coating, particularly relates to a low-temperature titanium nitride coating preparation device for a spinning crochet hook, and aims to solve the problems that manual intervention or carrying is mostly needed and the contact surface of the crochet hook and a placement rack cannot be uniformly coated in the process of putting in and taking out the existing placement rack. The inner wall of the bottom of the equipment body is rotationally connected with a rotating disc, a placing frame is placed at the top of the rotating disc, and the crochet hook bodies are placed in the placing frame; according to the device, the placement frame can be automatically put in and moved out, manpower is greatly saved, in the coating process, the crochet hook body can be driven to move up and down while rotating, the coating efficiency is improved, and the coating quality is improved. And during up-down movement, the crochet hook body is driven by the rotating table to rotate, so that the crochet hook body can be uniformly coated in an all-dimensional and dead-corner-free manner.

The invention belongs to the technical field of solid-state lithium metal batteries. The invention provides a mixed ion / electron conductor intermediate layer with a directional double-layer structure. The mixed ion / electron conductor intermediate layer comprises a titanium nitride nanotube array and lithium ion conductor layers deposited on the inner surface and the upper surface of the titanium nitride nanotube array. The lithium ion conductor layer on the upper layer of the directional double-layer structure mixed ion / electron conductor intermediate layer has high lithium ion conductivity and low electron conductivity, and can inhibit nucleation of lithium on an electrolyte interface and growth of lithium dendrites; the lower layer can guide lithium to realize uniform deposition and stripping in the nanotubes through a creep mechanism, and stress is effectively released, so that the electrochemical performance of the battery is improved; the creep path of lithium deposition stripping can be shortened, and the diffusion and transmission capability of lithium ions can be remarkably enhanced by matching with a lithium ion conductor with a high lithium ion diffusion rate; the middle layer is thin and controllable in thickness, the overall energy density of the battery is hardly reduced, and the application prospect is good.

The invention belongs to the field of PCBs (printed circuit boards), and provides a PCB material with high heat dissipation performance and a preparation method thereof.The PCB material adopts a multi-layer composite structure design and comprises a circuit board layer, a heat conduction insulating layer, a metal bottom layer, a silica gel-based heat conduction glue layer, a heat dissipation layer and heat dissipation fins, wherein the heat conduction insulating layer is a polyimide composite material in which hexagonal boron nitride nanosheets are oriented in parallel, and the heat dissipation layer is formed by coating an aluminum nitride reinforced aluminum-based composite material with a titanium nitride transition layer and is integrally die-cast with the heat dissipation fins. Through key technologies such as surface modified boron nitride nanosheet suction filtration orientation, polyamide acid dipping curing, heat dissipation assembly preparation through a coating-in-situ nitriding-die casting process and overall hot pressing assembly, the excellent heat conduction performance of the heat conduction insulating layer in the plane direction is achieved; the problems of low heat dissipation efficiency, poor device reliability and the like caused by insufficient heat-conducting property and insulating property of a traditional PCB material are solved, and the material has wide application value.

The invention discloses a double-layer waveguide 2 * 2 microring optical switch, an optical switch array thereof and an optical signal processing method, and belongs to the technical field of optical communication devices. Aiming at the technical problem that a traditional micro-ring optical switch is difficult to realize a large free spectral range and low-loss transmission at the same time, the invention provides an innovative structure combining a silicon nitride micro-ring resonator and an annular Bragg grating, and the outer side of the silicon nitride micro-ring resonator is nested with the annular Bragg grating; and a light field forbidden band is constructed to suppress a light field radiated outwards by the resonator, so that strong light field constraint is realized to remarkably reduce bending loss. A silicon-silicon nitride double-layer waveguide interlayer coupling technology is adopted, the lower layer is a silicon coupling waveguide, the upper layer is a silicon nitride micro-ring resonator and concentric annular grating structure, and a titanium nitride micro-heater is integrated to adjust the resonant wavelength. The invention effectively solves the technical problem that the silicon nitride micro-ring optical switch is difficult to obtain in the aspects of large free spectral range and low loss at the same time, and is a key technical support for constructing a high-integration wavelength selection optical switching chip.

The invention provides an integrated circuit device and a forming method thereof, and the method comprises the following steps: forming a thin-film resistor, a titanium nitride layer and an anti-reflection layer which are stacked on a semiconductor substrate, and forming a protection layer on the side walls of the thin-film resistor, the titanium nitride layer and the anti-reflection layer; and carrying out dry etching on the anti-reflection layer, and carrying out wet etching on the titanium nitride layer to expose the thin-film resistor and form a foot pad. By adjusting the etching sequence, namely, the sequence of forming the thin film resistor firstly and then forming the foot pad, the process window of the foot pad can be effectively improved, and the problem of photoresist residue is solved.

The invention belongs to the technical field of energy and electrochemical catalysis, and discloses a titanium nitride / transition metal phosphide heterojunction electrode with a nano array structure, a preparation method of the titanium nitride / transition metal phosphide heterojunction electrode and application of the titanium nitride / transition metal phosphide heterojunction electrode to seawater electrolysis for hydrogen production. The electrode comprises titanium nitride grown on a conductive substrate and transition metal phosphides (such as cobalt phosphides, nickel phosphides, iron phosphides or a combination thereof) loaded on the surface of the titanium nitride. According to the composite electrode, a titanium dioxide nano array is synthesized on a conductive substrate through seed crystal assisted solvothermal, and a titanium nitride electrode is obtained through high-temperature nitridation; and then carrying out hydrothermal loading on a transition metal precursor and carrying out low-temperature phosphating treatment to obtain the titanium nitride / transition metal phosphide composite electrode. By combining high conductivity and corrosion resistance of titanium nitride and high catalytic activity and electrochemical stability of transition metal phosphide, the technical problems that a traditional electrode is easy to corrode and poor in catalytic stability in a seawater environment are solved; the synthesized titanium nitride / transition metal phosphide composite electrode is of a multi-scale graded nano array structure, and the micro-nano composite morphology of the composite electrode can be used for inducing the turbulence effect of an electrolyte, so that hydrogen evolution bubble separation is accelerated, and interface adsorption of precipitates such as magnesium hydroxide / calcium hydroxide is inhibited. Through the innovative hierarchical heterostructure design, an efficient, low-cost and long-life electrode solution is provided for direct hydrogen production from seawater, and the method has a wide industrial application prospect.

The invention discloses a TEC photo-thermal stable thermoelectric power generation device and a preparation method thereof, and relates to the technical field of thermal power generation, and the TEC photo-thermal stable thermoelectric power generation device comprises an energy capture module, a thermoelectric power generation module and a dual-mode heat dissipation module which are sequentially arranged from top to bottom; the energy capture module comprises a silicon substrate with a micro-cone array on the surface, a phase change energy storage buffer dielectric layer coated on the surface of the micro-cone array, and a silicon carbide film layer, a titanium nitride film layer and a titanium nitride nanoparticle layer which are sequentially arranged on the surface of the phase change energy storage buffer dielectric layer; the thermoelectric power generation module comprises a corrugated metal composite substrate and a plurality of thermoelectric units arranged on the surface of the metal composite substrate. The bottleneck that a traditional single material is insufficient in solar spectrum coverage is broken through, the solar energy utilization efficiency is greatly improved, excessive heat generated by sudden change of instantaneous illumination intensity can be effectively absorbed, and continuous and stable heat source input is provided for thermoelectric conversion.

The present application discloses a cell contact structure, a semiconductor device, and a method for fabricating the semiconductor device. The cell contact structure includes a contact layer positioned on a substrate and enclosed by a plurality of bit line structures and a plurality of partition layers; and a liner layer positioned between the contact layer and the substrate, between the contact layer and the plurality of bit line structures, and between the contact layer and the plurality of partition layers. A top surface of the contact layer and a top surface of the liner layer are substantially coplanar. The liner layer includes doped polycrystalline silicon, doped polycrystalline germanium, or doped polycrystalline silicon germanium. The contact layer includes tungsten, titanium, or titanium nitride.

The invention discloses a titanium carbonitride-based metal ceramic alloy with a dispersive distribution micro-nano twin-crystal core ring structure and a preparation method thereof, the metal ceramic alloy comprises hard phase powder, hard phase powder, hard phase powder and hard phase powder, the hard phase powder comprises TiCN powder, TiC powder and WC powder, and the hard phase powder comprises TiC powder, TiC powder and WC powder; binding phase powder and multi-component alloy strengthening powder. According to the core-ring shell composite crystal grain, the core is 50-200 nm superfine TiCN crystal grains (high-hardness phase), and basic strength is provided; according to the annular shell, the core is wrapped with the oriented-growth TiCN whiskers with the large length-diameter ratio, the whisker bridging effect is formed, and the crack path is deflected. And dispersion bicrystal distribution: micron-sized coarse grains and submicron fine grains are in bimodal distribution according to the volume ratio of 7: 3, the coarse grains hinder crack propagation, and the fine grains inhibit grain boundary slippage. In-situ reaction strengthening: MoSiB and other components are added, a MoO / TiO self-lubricating film is generated in high-temperature friction, the wear rate is reduced, and negative wear is realized.