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3113 results about "Titanium nitride" patented technology
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Titanium nitride (TiN; sometimes known as Tinite) is an extremely hard ceramic material, often used as a coating on titanium alloys, steel, carbide, and aluminium components to improve the substrate's surface properties.
Vapor deposition method for ternary compounds
InactiveUS20100102417A1High resistivitySolid-state devicesSemiconductor/solid-state device manufacturingNitrogen plasmaGas phase
Embodiments provide a method for depositing or forming titanium aluminum nitride materials during a vapor deposition process, such as atomic layer deposition (ALD) or plasma-enhanced ALD (PE-ALD). In some embodiments, a titanium aluminum nitride material is formed by sequentially exposing a substrate to a titanium precursor and a nitrogen plasma to form a titanium nitride layer, exposing the titanium nitride layer to a plasma treatment process, and exposing the titanium nitride layer to an aluminum precursor while depositing an aluminum layer thereon. The process may be repeated multiple times to deposit a plurality of titanium nitride and aluminum layers. Subsequently, the substrate may be annealed to form the titanium aluminum nitride material from the plurality of layers. In other embodiments, the titanium aluminum nitride material may be formed by sequentially exposing the substrate to the nitrogen plasma and a deposition gas which contains the titanium and aluminum precursors.
Owner:APPLIED MATERIALS INC
Memory elements and methods for making same
Annular, linear, and point contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conductive material such as carbon or titanium nitride is used to form the contact. In an alternative embodiment, a memory material itself is used to form the contact. These contact structures may be made by various processes, including chemical mechanical planarization and facet etching.
Owner:ROUND ROCK RES LLC
Formation of boron-doped titanium metal films with high work function
ActiveUS10083836B2Solid-state devicesSemiconductor/solid-state device manufacturingHalogenTitanium metal
Owner:ASM IP HLDG BV
Method of forming a contact structure in a semiconductor device
InactiveUS6440837B1Solid-state devicesSemiconductor/solid-state device manufacturingProcess deviationsEtching
Owner:ROUND ROCK RES LLC
Method for manufacturing semiconductor device
InactiveUS20120064690A1Leakage currentSolid-state devicesSemiconductor/solid-state device manufacturingDevice materialTitanium nitride
A method for manufacturing a semiconductor device includes at least forming a lower electrode made of titanium nitride on a semiconductor substrate, forming a dielectric film comprising zirconium oxide, in which at least the uppermost layer of the dielectric film is formed by an atomic layer deposition (ALD) method on the lower electrode, forming a first protective film on the dielectric film without exceeding the film forming temperature of the ALD method over 70° C., and forming an upper electrode made of a titanium nitride on the first protective film.
Owner:ELPIDA MEMORY INC
Method of fabricating a gate structure of a field effect transistor having a metal-containing gate electrode
InactiveUS20050009358A1High selectivitySemiconductor/solid-state device detailsSolid-state devicesBromineTitanium nitride
A method of etching metals and / or metal-containing compounds using a plasma comprising a bromine-containing gas. In one embodiment, the method is used during fabrication of a gate structure of a field effect transistor having a titanium nitride gate electrode, an ultra-thin (about 10 to 20 Angstroms) silicon dioxide gate dielectric, and a polysilicon upper contact. In a further embodiment, the gate electrode is selectively notched to a pre-determined width.
Owner:APPLIED MATERIALS INC
Remotely-excited fluorine and water vapor etch
ActiveUS20120211462A1Small overall deformationElectric discharge tubesDecorative surface effectsChemical reactionRemote plasma
A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. The chemical reaction resulting from the combination produces reactants which etch the patterned heterogeneous structures to produce, in embodiments, a thin residual structure exhibiting little deformation. The methods may be used to conformally trim silicon oxide while removing little or no silicon, polysilicon, silicon nitride, titanium or titanium nitride. In an exemplary embodiment, the etch processes described herein have been found to remove mold oxide around a thin cylindrical conducting structure without causing the cylindrical structure to significantly deform.
Owner:APPLIED MATERIALS INC
Deposition processes for titanium nitride barrier and aluminum
InactiveUS20090087585A1Increasing nitrogen gas flowDecrease DC powerSemiconductor/solid-state device detailsSolid-state devicesTitanium nitrideDeposition process
Embodiments described herein provide a method for forming two titanium nitride materials by different PVD processes, such that a metallic titanium nitride layer is initially formed by a PVD process in a metallic mode and a titanium nitride retarding layer is formed over a portion of the metallic titanium nitride layer by a PVD process in a poison mode. Subsequently, a first aluminum layer, such as an aluminum seed layer, may be selectively deposited on exposed portions of the metallic titanium nitride layer by a CVD process. Thereafter, a second aluminum layer, such as an aluminum bulk layer, may be deposited on exposed portions of the first aluminum layer and the titanium nitride retarding layer during an aluminum PVD process.
Owner:APPLIED MATERIALS INC
Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
A method of forming an electrode on a substrate is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a titanium tetraiodide (TiI4) precursor; contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor; and depositing a titanium nitride layer over a surface of the substrate thereby forming the electrode; wherein the titanium nitride layer has an electrical resistivity of less than 400 μΩ-cm. Related semiconductor device structures including a titanium nitride electrode deposited by the methods of the disclosure are also provided.
Owner:ASM IP HLDG BV
Structure and method for metal replacement gate of high performance
ActiveUS20050051854A1Improve performanceSemiconductor/solid-state device manufacturingSemiconductor devicesTitanium nitrideDiffusion barrier
A structure and method for a metal replacement gate of a high performance device is provided. A sacrificial gate structure is first formed on an etch stop layer provided on a semiconductor substrate. A pair of spacers is provided on sidewalls of the sacrificial gate structure. The sacrificial gate structure is then removed, forming an opening. Subsequently, a metal gate including an first layer of metal such as tungsten, a diffusion barrier such as titanium nitride, and a second layer of metal such as tungsten is formed in the opening between the spacers.
Owner:GLOBALFOUNDRIES US INC
Semiconductor gate structure for threshold voltage modulation and method of making same
InactiveUS20140231922A1Lower work functionSemiconductor/solid-state device manufacturingSemiconductor devicesDielectricTitanium nitride
A gate structure of a semiconductor device having a NFET and a PFET, includes a lower layer of a hafnium-based dielectric over the gates of the NFET and PFET, and an upper layer of a lanthanide dielectric. The dielectrics are annealed to mix them above the NFET resulting in a lowered work function, and corresponding threshold voltage reduction. An annealed, relatively thick titanium nitride cap over the mixed dielectric above the NFET gate also lowers the work function and threshold voltage. Above the TiN cap and the hafnium-based dielectric over the PFET gate, is another layer of titanium nitride that has not been annealed. A conducting layer of tungsten covers the structure.
Owner:GLOBALFOUNDRIES US INC
Air gap interconnects using carbon-based films
InactiveUS20100093168A1Improve electrical isolationSemiconductor/solid-state device manufacturingMetal interconnectPorous carbon
A method of forming an interconnect structure comprising: forming a sacrificial inter-metal dielectric (IMD) layer over a substrate, wherein the sacrificial IMD layer comprising a carbon-based film, such as amorphous carbon, advanced patterning films, porous carbon, or any combination thereof; forming a plurality of metal interconnect lines within the sacrificial IMD layer; removing the sacrificial IMD layer, with an oxygen based reactive process; and depositing a non-conformal dielectric layer to form air gaps between the plurality of metal interconnect lines. The metal interconnect lines may comprise copper, aluminum, tantalum, tungsten, titanium, tantalum nitride, titanium nitride, tungsten nitride, or any combination thereof. Carbon-based films and patterned photoresist layers may be simultaneously removed with the same reactive process. Highly reactive hydrogen radicals processes may be used to remove the carbon-based film and simultaneously pre-clean the metal interconnect lines prior to the deposition of a conformal metal barrier liner.
Owner:APPLIED MATERIALS INC
Dual work function buried gate-type transistor, method for forming the same, and electronic device including the same
ActiveUS20150349073A1Increase heightImprove rendering capabilitiesSemiconductor/solid-state device manufacturingSemiconductor devicesTitanium nitrideEngineering
A transistor includes: a source region and a drain region that are formed in a substrate to be spaced apart from each other; a trench formed in the substrate between the source region and the drain region; and a buried gate electrode inside the trench, wherein the buried gate electrode includes: a lower buried portion which includes a high work-function barrier layer including an aluminum-containing titanium nitride, and a first low-resistivity layer disposed over the high work-function barrier layer; and an upper buried portion which includes a low work-function barrier layer disposed over the lower buried portion and overlapping with the source region and the drain region, and a second low-resistivity layer disposed over the low work-function barrier layer.
Owner:SK HYNIX INC
Selective etching of titanium nitride with xenon difluoride
InactiveUS20070117396A1Semiconductor/solid-state device manufacturingChemical vapor deposition coatingEtchingTitanium nitride
This invention relates to an improved process for the selective etching of TiN from silicon dioxide (quartz) and SiN surfaces commonly found in semiconductor deposition chambers equipment and tools. In the process, an SiO2 or SiN surface having TiN thereon is contacted with XeF2 in a contact zone to selectively convert the TiN to a volatile species and then the volatile species is removed from the contact zone. XeF2 can be preformed or formed in situ by reaction between Xe and a fluorine compound.
Owner:VERSUM MATERIALS US LLC
Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
ActiveUS20210028021A1TransistorSemiconductor/solid-state device detailsDevice materialTitanium nitride
Owner:ASM IP HLDG BV
Method and system for dry etching a metal nitride
InactiveUS20080230519A1Decorative surface effectsSemiconductor/solid-state device manufacturingTitanium nitrideProcess composition
A method and system of etching a metal nitride, such as titanium nitride, is described. The etching process comprises introducing a process composition having a halogen containing gas, such as Cl2, HBr, or BCl3, and a fluorocarbon gas having the chemical formula CxHyFz, where x and z are equal to unity or greater and y is equal to 0 or greater.
Owner:TOKYO ELECTRON LTD
Method of forming a structure including silicon nitride on titanium nitride and structure formed using the method
PendingUS20200181770A1Reduce oxidationEasy to oxidizeSemiconductor/solid-state device manufacturingChemical vapor deposition coatingMetallurgyTitanium nitride
A method of forming a structure including a silicon nitride overlying a titanium nitride layer is disclosed. The method includes forming the titanium nitride layer and the silicon nitride layer in the same reaction chamber—e.g., without a vacuum break—to mitigate oxidation of the titanium nitride layer that might otherwise occur.
Owner:ASM IP HLDG BV
Selective titanium nitride removal
ActiveUS9040422B2Convenient restHigh removal rateElectric discharge tubesSemiconductor/solid-state device manufacturingRemote plasmaTitanium nitride
Methods are described herein for selectively etching titanium nitride relative to dielectric films, which may include, for example, alternative metals and metal oxides lacking in titanium and / or silicon-containing films (e.g. silicon oxide, silicon carbon nitride and low-K dielectric films). The methods include a remote plasma etch formed from a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride. The plasma effluents react with exposed surfaces and selectively remove titanium nitride while very slowly removing the other exposed materials. The substrate processing region may also contain a plasma to facilitate breaking through any titanium oxide layer present on the titanium nitride. The plasma in the substrate processing region may be gently biased relative to the substrate to enhance removal rate of the titanium oxide layer.
Owner:APPLIED MATERIALS INC
Selective titanium nitride removal
ActiveUS20140256131A1Convenient restHigh removal rateElectric discharge tubesSemiconductor/solid-state device manufacturingRemote plasmaTitanium nitride
Methods are described herein for selectively etching titanium nitride relative to dielectric films, which may include, for example, alternative metals and metal oxides lacking in titanium and / or silicon-containing films (e.g. silicon oxide, silicon carbon nitride and low-K dielectric films). The methods include a remote plasma etch formed from a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride. The plasma effluents react with exposed surfaces and selectively remove titanium nitride while very slowly removing the other exposed materials. The substrate processing region may also contain a plasma to facilitate breaking through any titanium oxide layer present on the titanium nitride. The plasma in the substrate processing region may be gently biased relative to the substrate to enhance removal rate of the titanium oxide layer.
Owner:APPLIED MATERIALS INC
Non-local plasma oxide etch
ActiveUS20140166617A1High titanium oxide selectivityElectric discharge tubesDecorative surface effectsRemote plasmaHydrogen
A method of etching exposed titanium oxide on heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flawed into a substrate processing region where the plasma effluents may combine with a nitrogen-containing precursor such as an amine (N:) containing precursor. Reactants thereby produced etch, the patterned heterogeneous structures with high titanium oxide selectivity while the substrate is at elevated temperature. Titanium oxide etch may alternatively involve supplying a fluorine-containing precursor and a source of nitrogen-and-hydrogen-containing precursor to the remote plasma. The methods may be used to remove titanium oxide while removing little or no low-K dielectric, polysilicon, silicon nitride or titanium nitride.
Owner:APPLIED MATERIALS INC
Memory elements and methods for making same
InactiveUS20020160551A1Solid-state devicesSemiconductor/solid-state device manufacturingProcess deviationsEtching
Annular, linear, and point contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conductive material such as carbon or titanium nitride is used to form the contact. In an alternative embodiment, a memory material itself is used to form the contact. These contact structures may be made by various processes, including chemical mechanical planarization and facet etching.
Owner:ROUND ROCK RES LLC
Dry-etch for selective oxidation removal
ActiveUS9064816B2Reduces and substantially eliminates numberMaterial removalElectric discharge tubesDecorative surface effectsSurface reactionRemote plasma
Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and / or titanium nitride are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and / or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten oxide. The plasmas effluents react with exposed surfaces and selectively remove tungsten oxide while very slowly removing other exposed materials. In some embodiments, the tungsten oxide selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate.
Owner:APPLIED MATERIALS INC
Remotely-excited fluorine and water vapor etch
A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. The chemical reaction resulting from the combination produces reactants which etch the patterned heterogeneous structures to produce, in embodiments, a thin residual structure exhibiting little deformation. The methods may be used to conformally trim silicon oxide while removing little or no silicon, polysilicon, silicon nitride, titanium or titanium nitride. In an exemplary embodiment, the etch processes described herein have been found to remove mold oxide around a thin cylindrical conducting structure without causing the cylindrical structure to significantly deform.
Owner:APPLIED MATERIALS INC
Non-local plasma oxide etch
InactiveUS9111877B2Electric discharge tubesSemiconductor/solid-state device manufacturingHydrogenRemote plasma
A method of etching exposed titanium oxide on heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flawed into a substrate processing region where the plasma effluents may combine with a nitrogen-containing precursor such as an amine (N:) containing precursor. Reactants thereby produced etch, the patterned heterogeneous structures with high titanium oxide selectivity while the substrate is at elevated temperature. Titanium oxide etch may alternatively involve supplying a fluorine-containing precursor and a source of nitrogen-and-hydrogen-containing precursor to the remote plasma. The methods may be used to remove titanium oxide while removing little or no low-K dielectric, polysilicon, silicon nitride or titanium nitride.
Owner:APPLIED MATERIALS INC
Radical-component oxide etch
A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high silicon oxide selectivity while the substrate is at high temperature compared to typical Siconi™ processes. The etch proceeds without producing residue on the substrate surface. The methods may be used to remove silicon oxide while removing little or no silicon, polysilicon, silicon nitride or titanium nitride.
Owner:APPLIED MATERIALS INC
Selective titanium nitride removal
ActiveUS20150357205A1Convenient restHigh removal rateElectric discharge tubesSemiconductor/solid-state device manufacturingTitanium nitrideSilicon oxide
Owner:APPLIED MATERIALS INC
Ion source
InactiveUS6849854B2Electric arc lampsMaterial analysis by optical meansElectron flowTitanium nitride
An ion source 10 for producing a beam of ions from a plasma is disclosed. A plasma is created at the center of an anode 12 by collisions between energetic electrons and molecules of an ionizable gas. The electrons are sourced from a cathode filament 11 and are accelerated to the anode 12 by an applied electric potential. A projection of the anode and a magnetic field having an axis aligned with the axis of the anode act together to concentrate the flow of electrons to the center of the anode 12. The ionizable gas is introduced into an ionization region 13 of the ion source 10 at the point of concentrated electron flow. Ions created in the ionization region are expelled from the ion source as an ion beam centred on the axis of the magnetic field. The surfaces of the anode are coated with an electrically conductive non-oxidising layer of Titanium Nitride to prevent a build up of an insulating layer on the anode.
Owner:SAINTECH
Formation of titanium nitride films using a cyclical deposition process
InactiveUS20040013803A1Natural mineral layered productsChemical vapor deposition coatingTitanium nitrideDeposition process
Methods of depositing titanium nitride (TiN) films on a substrate are disclosed. The titanium nitride (TiN) films may be formed using a cyclical deposition process by alternately adsorbing a titanium-containing precursor and a NH3 gas on the substrate. The titanium-containing precursor and the NH3 gas react to form the titanium nitride (TiN) layer on the substrate. The titanium nitride (TiN) films are compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, an interconnect structure is fabricated. The titanium nitride films may also be used as an electrode of a three-dimensional capacitor structure such as for example, trench capacitors and crown capacitors.
Owner:APPLIED MATERIALS INC
Method for forming metal replacement gate of high performance
InactiveUS6921711B2Semiconductor/solid-state device manufacturingSemiconductor devicesTitanium nitrideDiffusion barrier
A structure and method for a metal replacement gate of a high performance device is provided. A sacrificial gate structure is first formed on an etch stop layer provided on a semiconductor substrate. A pair of spacers is provided on sidewalls of the sacrificial gate structure. The sacrificial gate structure is then removed, forming an opening. Subsequently, a metal gate including an first layer of metal such as tungsten, a diffusion barrier such as titanium nitride, and a second layer of metal such as tungsten is formed in the opening between the spacers.
Owner:GLOBALFOUNDRIES U S INC
Phase change tip storage cell
ActiveUS20050127349A1Reduce the required powerSolid-state devicesDigital storageTitanium nitrideTe element
A storage cell, integrated circuit (IC) chip with one or more storage cells that may be in an array of the storage cells and a method of forming the storage cell and IC. Each storage cell includes a stylus, the tip of which is phase change material. The phase change tip may be sandwiched between an electrode and conductive material, e.g., titanium nitride (TiN), tantalum nitride (TaN) or n-type semiconductor. The phase change layer may be a chalcogenide and in particular a germanium (Ge), antimony (Sb), tellurium (Te) (GST) layer.
Owner:GLOBALFOUNDRIES US INC
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