1727 results about "Deposition process" patented technology

The invention belongs to the technical field, and discloses a film coating processing technology simulation and optimization system based on digital twinning. The system is composed of a data acquisition module, a feature recognition and analysis module, a behavioral digital twinborn simulation module, a coating uniformity evaluation module, a process parameter optimization module and a coating distribution prediction module. The method comprises the following steps: acquiring a three-dimensional roughness digital model of a base material, accurately identifying a micron-sized local rough region and extracting geometrical characteristic parameters of the micron-sized local rough region; constructing a coating growth behavior digital twinborn model based on the geometrical characteristic parameters and the process parameters, and accurately simulating the coating growth process of the local rough area; and establishing a global coating uniformity quantitative evaluation system, and optimizing a process parameter combination by applying machine learning and a genetic algorithm. The system breaks through the limitation of traditional static shadow hypothesis, real-time tracking and accurate simulation of microstructure evolution in the deposition process are achieved, and the coating growth prediction accuracy is remarkably improved.

The invention relates to the technical field of aluminum-based thin film preparation, and discloses an aluminum-based thin film uniform deposition system based on magnetron sputtering. The system comprises a substrate state detection module, a magnetic field dynamic regulation and control module, a sputtering power regulation module, a deposition process monitoring module and a central control terminal. The substrate state detection module collects and transmits surface flatness data of the substrate in real time, and the central control terminal carries out visual display. The magnetic field dynamic regulation and control module obtains magnetic field intensity correction through a magnetic field gradient algorithm according to the deviation value of the real-time flatness parameter and the standard parameter and sends the magnetic field intensity correction to the sputtering power regulation module. And the sputtering power adjusting module adjusts the sputtering rate of the target material accordingly. The deposition process monitoring module tracks the adjusting process, evaluates the dynamic response performance, generates a stable or fluctuation signal and sends the stable or fluctuation signal to the central control terminal, and the central control terminal triggers sound-light alarm when receiving the fluctuation signal. The system can improve the deposition uniformity and process stability of the aluminum-based thin film.

The invention discloses a composite modified material for a lithium niobate wafer, and relates to the technical field of nano materials. The material is composed of an anti-corrosion passivation matrix and a function enhancement component, wherein the anti-corrosion matrix adopts a silicon nitride / SiO2 multi-layer composite layer, atomic layer deposition titanium dioxide and magnetron sputtering aluminum oxide to form cascade protection; the functional layer comprises lead sulfide nanoparticles and nano silicon dioxide, and is directionally modified by a silane coupling agent and a perfluoropolyether surfactant. During preparation, PbS nano-particles are synthesized by combining a PECVD-ALD-magnetron sputtering stepped deposition process (200-150 DEG C) with a solvothermal method, and finally, the PbS nano-particles are formed through spin coating-annealing (300-400 DEG C). The optical loss of the material under the wavelength of 1550 nm is smaller than 0.2 dB / cm, the acid and alkali corrosion resistance is larger than 240 h, the lead dissolution rate is smaller than 0.1 ppm, the interface state density is reduced by 2 orders of magnitude, the contradiction between lithium niobate wafer surface degradation, photoelectric property degradation and lead-containing material environment risk is solved, and the material is suitable for 5G optical waveguide and quantum integrated device packaging.

The invention relates to the technical field of laser deposition control, in particular to an unmanned aerial vehicle metal part ultrasonic field auxiliary laser deposition system which comprises the following modules: a data acquisition module for acquiring a molten pool thermal field signal, a sound field signal and a laser scattering signal, and performing sampling, filtering and synchronous processing to obtain molten pool original data; the micro-flow digital twinning module is used for establishing a molten pool micro-flow digital twinning model according to the molten pool original data and simulating molten pool micro-flow behavior to obtain micro-flow prediction data; and the microflow ultrasonic regulation and control module is used for generating an ultrasonic pulse sequence according to the microflow prediction data and applying the ultrasonic pulse sequence to the molten pool to regulate and control the flow field. According to the invention, through the molten pool microflow digital twinning module and the microflow ultrasonic regulation and control module, real-time modeling and regulation and control of the molten pool microflow structure in the complex geometric part deposition process are realized, the problem that local vortexes, shear layer differences and flow field anomalies cannot be identified in real time in the traditional technology is solved, and the molten pool microflow evolution can be actively reconstructed.

The invention discloses an air pressure control method for microwave plasma chemical vapor deposition diamond, and particularly relates to the technical field of microwave plasma chemical vapor deposition, and the method comprises the steps of S1, spectrum real-time monitoring, S2, machine learning prediction, S3, multi-stage air pressure regulation and control, S4, multi-parameter cooperative control, and S5, air pressure closed-loop control. According to the method, high-precision prediction of the optimal air pressure value is achieved through combination of spectrum real-time monitoring and a machine learning model, the diamond deposition quality is effectively improved by means of a multi-stage air pressure regulation and control and multi-parameter cooperative control strategy, the surface flatness and crystallinity are remarkably improved, meanwhile, precise air pressure closed-loop control and efficient gas flow are coordinated, and the precision of the diamond deposition is improved. In addition, all the modules of the system are in close fit, the stability of the deposition environment is guaranteed, the process fluctuation is reduced, the stability and reliability of the whole deposition process are enhanced, and powerful guarantee is provided for high-quality and high-efficiency production of diamonds.

The invention discloses a perovskite solar cell module based on insulation layer protection and a packaging process optimization method thereof, through adding an insulation protection layer on the surface of a metal electrode layer and combining a specific deposition process and a packaging process, the risk of short circuit is effectively avoided, and the stability of the cell module is improved at the same time. The perovskite solar cell module sequentially comprises a glass substrate, a transparent conductive oxide layer, a first functional layer, a perovskite layer, a second functional layer, a metal electrode layer, an insulating layer, an adhesive film and a packaging cover plate from bottom to top, and efficient packaging is realized by optimizing laser scribing and insulating layer deposition processes. According to the invention, the long-term stability and the electrical performance of the perovskite assembly are obviously improved, and the perovskite assembly has a wide application prospect.

The invention relates to the technical field of magnetron sputtering, in particular to a magnetron sputtering uniform coating system for LOW-E glass, which comprises a particle distribution detection module, a potential guide control module, a magnetic field track adjustment module, an angle deviation monitoring module and an energy flux density feedback module. According to the method, a dynamic difference index is constructed by extracting a particle number change rate difference value, time sequence tracking of particle distribution is achieved, edge particles are guided to return to bias in combination with electrode array potential adjustment, the non-equilibrium region particle compensation capacity is improved, a magnetic control structure adjusts the track direction according to the particle accumulation behavior, and local reconstruction of a diffusion path is achieved. The reflection path offset data is used for correcting abnormal rebound behaviors and expanding the particle motion intervention range, the energy flux density difference value serves as control input, the electric field and magnetic field action areas are linked, real-time balance adjustment of the deposition process is completed, and the uniformity of the film layer thickness and the space coverage stability are further improved.

The invention belongs to the field of preparation of nano materials, and discloses a CoP / Co (OH) 2 sea urchin-shaped heterojunction catalyst growing on foamed nickel and a preparation method and application of the CoP / Co (OH) 2 sea urchin-shaped heterojunction catalyst. Alkali cobalt carbonate (CoCH) is used as a precursor, a crystalline phase CoP substrate is generated through a low-temperature phosphating method, then the surface of the crystalline phase CoP substrate is uniformly coated with an amorphous Co (OH) 2 layer through an electro-deposition process, and the self-supporting phosphating / hydroxyl heterogeneous structure catalyst (CoP / Co (OH) 2) is successfully constructed. The obtained CoP / Co (OH) 2 shows excellent complete water splitting performance, and is benefited from the high-activity specific surface area (Cdl = 44.66 mF cm <-2 >) and the interface rapid electron conduction characteristic (Rct = 0.43 omega) of a heterogeneous structure; when two electrodes are assembled to fully decompose water, the cell voltage is only 1.780 V when the current density is 250 mA cm <-2 >, and after continuous operation is carried out for 24 hours, the performance is basically kept unchanged, and the voltage fluctuation ratio is lower than 0.5%. CoP / Co (OH) 2 is prepared into a 2 * 2cm < 2 > self-supporting electrode to construct AEMWE, only 2.08 V cell voltage is needed under the ultrahigh current density of 1A cm <-2 >, the AEMWE can stably run for 250 hours, the attenuation rate is 80 mu V h <-1 >, meanwhile, the hydrogen production efficiency is calculated to reach 96.2% through gas metering and Faraday law, and the engineering potential of the AEMWE in large-scale hydrogen production application is verified.

The invention relates to an atomic layer etching system and method for autonomously generating a process formula. The system is provided with a system digital twinning capable of autonomously generating process formula parameters and subsystem control parameters. The system based on digital twin drive can support accurate simulation, thereby realizing efficient and highly adaptive semiconductor processing. In some embodiments, a system controller may utilize system digital twinning to generate a process recipe based on an optimization program of a predefined cost function. A novel approach is presented herein that provides an initial estimate by utilizing a large number of simulation application cases accumulated for a long term in the background. The concept of the invention can be widely applied to any type of etching and deposition process system using the vacuum plasma chamber.

The invention provides a multi-mode fusion laser directional energy deposition real-time monitoring method and system, and belongs to the technical field of additive manufacturing. Comprising the steps that real-time data collection is conducted on a molten pool area in the laser directional energy deposition process through synchronous triggering of a multi-source sensor; a distributed clock network is constructed, environment influence parameters are collected in real time in combination with a working condition sensing unit, dynamic modeling and correction are conducted on asymmetric link delay in the clock synchronization process, and space-time alignment of multi-source sensor data is achieved; after the multi-source sensor data subjected to space-time alignment is preprocessed, data-level fusion, feature-level fusion and decision-level fusion are performed in sequence. The state of the molten pool can be accurately monitored in real time, and the quality and stability of the laser directional energy deposition process are improved.

The invention discloses a substrate pre-cleaning method based on PECVD (Plasma Enhanced Chemical Vapor Deposition), and belongs to the technical field of semiconductor film deposition. The method mainly comprises the steps that a substrate to be deposited is placed on a heater in a deposition cavity, and the vacuum degree in the closed deposition cavity is adjusted to a first preset value; argon is introduced into the deposition cavity at a preset flow rate, and the vacuum degree in the deposition cavity is adjusted to a second preset value; forming a radio-frequency electric field in the deposition cavity by using a high-frequency radio-frequency power supply, and ionizing argon gas by using the radio-frequency electric field to form argon ions; and the surface of the to-be-deposited substrate is bombarded through argon ions until impurities on the surface of the to-be-deposited substrate are removed, and the vacuum degree in the deposition cavity is adjusted back to a first preset value after the impurities are removed. The physical bombardment characteristic of argon plasma is utilized to achieve efficient removal of surface pollutants of the to-be-deposited substrate, and meanwhile seamless connection of pretreatment and the deposition process is guaranteed through cooperative control of all systems of equipment.

The invention discloses a thin film deposition cavity with uniform temperature distribution. The thin film deposition cavity comprises a heater, a back plate assembly, a cavity side wall, a cavity bottom plate and a plurality of temperature compensation devices, the back plate assembly comprises a gas inlet and a gas flow homogenizing plate; a vacuum pump interface is arranged on the cavity bottom plate; the temperature compensation device is arranged on the inner side of the side wall of the cavity, or the temperature compensation device is embedded in the side wall of the cavity; the temperature compensation device has the orientation and the light intensity of illumination radiation which can be independently adjusted. The multiple temperature compensation devices are arranged, illumination radiation heating is conducted on the low-temperature area on the front face of the wafer, so that temperature compensation is conducted on the wafer, the temperature of the surface of the wafer in the thin film deposition process is more uniform, and the thin film deposition quality is improved.

The utility model provides a split type wafer supporting mechanism and a process chamber. The split type wafer supporting mechanism comprises a plurality of first ring bodies, a plurality of second ring bodies and a first lifting mechanism. The plurality of first ring bodies are arranged in the process chamber through the plurality of first support rods and are used for supporting a plurality of first positions on the edge of the wafer. And the plurality of first support rods are positioned on the periphery of the spray header below the wafer. The plurality of second ring bodies are arranged in the process chamber through the plurality of second support rods and are used for supporting a plurality of second positions of the wafer edge. And the plurality of second support rods are positioned on the periphery of the spray header below the wafer. The first lifting mechanism is connected with the plurality of first ring bodies through a plurality of first supporting rods, and is used for lifting the plurality of first ring bodies to a preset wafer conveying position before a back deposition process is carried out on the wafer so as to receive the wafer conveyed into the process chamber, and lifting the plurality of first ring bodies to a process position when the back deposition process is carried out on the wafer so as to receive the wafer conveyed into the process chamber; the plurality of second rings support the edge of the wafer together with the plurality of second rings.

The invention provides a method and a device for measuring the solid-phase deposition amount of crude oil under high-temperature and high-pressure conditions, and relates to the technical field of oil-gas field development. Under the reservoir temperature and pressure of a target oil reservoir, ground degassed crude oil, associated gas and an on-site solid-phase sediment sample are mixed and dissolved; an in-situ crude oil sample capable of truly reflecting in-situ crude oil components is prepared; then, reducing the pressure to a target pressure point in a stepped manner at a constant temperature, and delimiting a deposition monitoring area; spectral image data of the area is obtained, spectral reflection reference rate is analyzed and calculated pixel by pixel, and a spectral distribution matrix is constructed; judging whether the solid-phase deposition reaches balance or not by calculating a space consistency index and a time convergence index of the matrix; finally, the solid-phase deposition amount is calculated after deposition equilibrium; according to the method, the problem of solid-phase deposition measurement distortion under the ultrahigh-pressure oil reservoir condition is solved, and interference-free, real-time monitoring and quantitative analysis in the deposition process are achieved.

The invention discloses an additive manufacturing method for in-situ regulation and control of a TiB / TiC titanium-based heterostructure through laser deposition, and belongs to the technical field of composite material preparation. According to the method, laser path planning is carried out based on three-dimensional modeling and layered slicing; the preparation method comprises the following steps: ball-milling and mixing titanium alloy powder, nano boron carbide powder and trace rare earth powder according to a specific proportion, and carrying out vacuum drying; and addition of trace rare earth is beneficial to grain refinement and improvement of reinforcement phase distribution and interface bonding. Under the action of a high-energy laser beam, the mixed powder is fused in an argon protective atmosphere, an in-situ reaction is carried out at the same time, and TiB and TiC reinforced phases are generated; the gradient component design can be implemented in the laser deposition process, specifically, the powder feeding proportion of B4C powder is dynamically controlled through a program, the gradient of the B4C powder is increased from the bottom layer to the surface layer in the direction perpendicular to the substrate, and therefore the gradient heterostructure with the enhanced phase content and performance gradually changed is formed. According to the method, the problems of non-uniform reinforcement phase distribution, obdurability mismatch, plasticity loss and the like in a traditional method are solved, the prepared composite material or gradient component has high strength (the tensile strength reaches 987.66 MPa) and good plasticity and toughness matching, no crack defect exists, and the method is suitable for manufacturing of high-performance parts in the fields of aerospace and high-end machine manufacturing.

A vertical stack of three-dimensional transistors, such as nanoribbon-based transistors, includes a stack of nanoribbons with independent sources or drained coupled to different nanoribbons or subsets of nanoribbons in the stack. In previous nanoribbon transistors, source / drain regions join the ends of a stack of nanoribbons together, thus electrically shorting the source ends together and the drain ends together. To achieve a stack of semiconductor regions with independent sources or drains, adjacent nanoribbons in the stack may be set at different distances apart, or the source side and drain side may be deposited in separate deposition processes.

The invention discloses a high-sulfur-content natural gas elbow sulfur particle deposition simulation experiment device and a testing method, and relates to the technical field of high-sulfur-content natural gas gathering and transportation pipeline sulfur particle dynamic deposition. The sulfur particle deposition simulation experiment device for the high-sulfur-content natural gas pipeline can simulate the dynamic deposition process of sulfur particles under various working conditions such as different flow rates of the sulfur particles, different flow rates of gas, different particle sizes of the sulfur particles, different pipeline pressures, different pipe bending angles and different pipe bending materials; through the two-stage recovery and two-stage purification scheme of the activated carbon adsorption device, the cloth bag dust collector and the secondary filter screen, the sulfur particle recovery rate is highly reliable, and the danger to the environment and testers is remarkably reduced; and through the coupling design of the micro vibrator and the sulfur particle injection device, the problem of blockage caused by sulfur particle agglomeration is effectively solved, and the manual intervention frequency is reduced.

The invention relates to the technical field of solar cells, and provides a photovoltaic module, a laminated cell, a back contact cell and a manufacturing method thereof. The manufacturing method comprises the following steps: providing a substrate, wherein a second surface of the substrate comprises a first region and a second region; forming a tunneling layer on the second surface; forming a first polycrystalline silicon layer on the surface of the tunneling layer by adopting a first deposition process; forming a second polycrystalline silicon layer on the surface of the first polycrystalline silicon layer by adopting a second deposition process; the temperature and pressure of the first deposition process are higher than those of the second deposition process; carrying out doping treatment, and converting the first polycrystalline silicon layer and the second polycrystalline silicon layer into a first semiconductor doped layer; forming a second semiconductor doping layer on the second region; a first electrode and a second electrode are formed, the first electrode being in electrical contact with the first semiconductor doped layer and the second electrode being in electrical contact with the second semiconductor doped layer. According to the invention, low-resistance ohmic contact between the first semiconductor doping layer and the first electrode is realized at least while a good surface passivation effect is ensured.

The invention provides a high-strength winding thin-wall SiC composite cladding tube and a preparation method thereof. A preparation method of a high-strength winding thin-wall SiC composite cladding tube comprises the steps that silicon carbide fibers are wound and laid around a core mold, the winding pre-tightening force is smaller than or equal to 10 N. The winding mode comprises the first mode that one layer of annular winding is conducted firstly, then one layer of spiral winding is conducted, and the number of fiber intersection points in the whole annular direction at a certain position of the outer surface of the core mold is 1. One-layer annular winding is carried out firstly, then two-layer spiral winding is carried out, the number of fiber intersection points in the whole annular direction at a certain position of the outer surface of the core mold is 3, and a prefabricated body is obtained; carrying out a densification deposition process on the preform, wherein the densification deposition process comprises PyC pyrolytic carbon interface deposition, CVI chemical vapor infiltration and CVD chemical vapor deposition; and precise inner circle and outer circle machining is conducted, and the SiC composite cladding pipe is obtained. According to the preparation method disclosed by the invention, through a specific dry winding mode and a densification deposition process, the SiC composite material tube blank is higher in density and better in mechanical property.

The invention relates to the field of numerical simulation, in particular to a porous ceramic model reconstruction and filtering performance simulation method, which comprises the following steps of: S1, obtaining internal structure image data of a ceramic material through micro-CT (Computed Tomography) scanning with micron-level resolution, and reconstructing a real three-dimensional microstructure of the ceramic material; s2, performing REV extraction and dynamic processing on the three-dimensional geometric model generated in the S1; s3, establishing a flow field model on the CFD, and setting corresponding boundary conditions; s4, the DPM is started, a particle injection source is configured, and particle physical parameters are set; s5, bidirectional coupling solution is executed, and high-precision particle motion and deposition process simulation is achieved; and S6, extracting simulation result data, and if the difference between the simulation result and the reference value exceeds a preset threshold value, returning to S4 and / or S5 to carry out parameter adjustment and model correction. According to the method, effective prediction of the particles in the porous structure can be realized.

The invention discloses a target detection-based molten pool working condition monitoring method in a laser directional energy deposition process and application, which uses a deep learning-based target detection network to identify the molten pool working condition, and comprises the following steps of: 1, constructing an image data set of target detection, 2, constructing a target detection model, and 3, identifying the molten pool working condition in the target detection model. Comprising a multi-level feature extraction module, a feature fusion module and an output module, 3, training of a target detection model, and 4, obtaining a gray level image detection result of laser directional energy deposition to be monitored through the target detection model. According to the method, molten pool position information can be automatically detected from the gray scale molten pool image in the laser directional energy deposition process, working condition types can be recognized, intelligent recognition and classification of the working conditions of the molten pool are achieved, the proposed target detection model can directly and automatically learn deep features of the molten pool from the original gray scale image, complex pretreatment steps are avoided, and the working efficiency is improved. The adaptive capacity of the model is remarkably improved through deep learning, and reliable technical support is provided for intelligent monitoring of the laser directional energy deposition process.

The reaction chamber (100) is designed for a reactor (100) for deposition of layers of semiconductor material on substrates; it comprises a tube (110) and an injector (20) and a holder (30); the tube (110) is made of quartz and has a cylindrical or prismatic shape and surrounds a reaction and deposition zone; the injector (20) is arranged to inject precursor gases into the reaction and deposition zone; the holder (30) is arranged to support a substrate in the reaction and deposition zone during deposition processes; graphite susceptor elements (10, 40, 50) are located inside the tube (110) for heating the reaction and deposition zone and components inside the reaction and deposition zone; an inductor system (60, 70) is located outside the tube (110) for providing energy to the susceptor elements (10, 40, 50) by electromagnetic induction; a rotating element (80) in the form of a cylindrical or prismatic tube is located inside the reaction and deposition zone and surrounds the injector (20).

The invention discloses a rod feeding type stirring friction additive manufacturing device capable of continuously providing an upsetting force, relates to the technical field of additive manufacturing, and aims to solve the problems that when an existing stirring friction deposition additive manufacturing device adopts a rod for feeding, the upsetting force is easy to interrupt, the feeding continuity is poor, and the production efficiency is high. The internal tissue compactness and the external geometric accuracy of the component are further influenced. The device comprises a supporting shell, a stirring and plasticizing assembly, a feeding driving assembly, a storing and supplying assembly, a bar pushing piece and a bar with a matching structure. Continuous feeding is achieved through intermittent rotation of the storing and feeding assembly, rotary motion is converted into axial feeding of bars through transmission of a matched structure of the feeding driving assembly so as to provide continuous upsetting force, and the material plasticizing and mixing effect and the mechanism overload protection capacity are improved in cooperation with an elastic material processing piece of the stirring and plasticizing assembly. According to the invention, the continuity of bar feeding, plasticizing and depositing processes is realized, and the quality and the production efficiency of additive manufacturing components are effectively improved.

Semiconductor devices having air gap spacers that are formed as part of BEOL or MOL layers of the semiconductor devices are provided, as well as methods for fabricating such air gap spacers. For example, a method comprises forming a first metallic structure and a second metallic structure on a substrate, wherein the first and second metallic structures are disposed adjacent to each other with insulating material disposed between the first and second metallic structures. The insulating material is etched to form a space between the first and second metallic structures. A layer of dielectric material is deposited over the first and second metallic structures using a pinch-off deposition process to form an air gap in the space between the first and second metallic structures, wherein a portion of the air gap extends above an upper surface of at least one of the first metallic structure and the second metallic structure.

The invention belongs to the technical field of sodium ion batteries, and particularly relates to a phenolic resin-based hard carbon material as well as a preparation method and application thereof. Compared with the prior art, the method provided by the invention has the characteristic of simple and convenient process, the structural design is directly carried out based on the hard carbon material body, and a complicated coating or deposition process is not needed; the closed pore volume of hard carbon and the interlayer spacing and thickness of carbon layers can be accurately regulated and controlled by changing the addition amount of phosphoric acid and the temperature and time of high-temperature heat treatment; besides, the obtained hard carbon material has a rich closed-pore structure, can be used as a sodium-ion battery negative electrode material, and shows excellent first coulombic efficiency, high platform capacity and high reversible specific capacity, so that the electrochemical performance of a sodium-ion battery is remarkably improved.

The invention discloses a perovskite material solution, a perovskite film and a preparation method and application thereof, and the preparation method of the perovskite material solution uses a high-boiling-point solvent as an independent additive, specifically, after a perovskite precursor is completely dissolved and filtered, the high-boiling-point solvent (a single or composite system) is quantitatively added, and the perovskite material solution is prepared. Subsequent preparation of the perovskite film can achieve the following effects by accurately controlling the vacuumizing rate and the processing time: (1) the crystallization window period is prolonged due to the slow evaporation characteristic of the high-boiling-point solvent, perovskite crystal grains are promoted to grow orderly, a uniform and compact film microstructure is formed, internal stress accumulation caused by rapid crystallization is effectively relieved, and the performance of the perovskite film is improved; the cracking risk is obviously reduced; and (2) solvent molecules are preferentially enriched in a grain boundary region in a deposition process, and uncoordinated Pb < 2 + > defects are passivated through coordination, so that the defect density of the thin film is reduced, and the photoelectric conversion efficiency of a device is improved.

The invention discloses a substrate processing method and a substrate processing control system. The method comprises the steps that a gas reaction source is charged into a buffer device located on the upstream of a reaction cavity, so that the pressure in the buffer device reaches a first stable pressure value, and the first stable pressure value corresponds to the target dosage of the gas reaction source; in response to the fact that the pressure in the buffer device reaches a first stable pressure value, the buffer device is filled with pressurized gas so that the pressure in the buffer device can reach a second stable pressure value, and the second stable pressure value corresponds to the target filling rate of the gaseous reaction source; introducing a target amount of gaseous reaction source into the reaction cavity and filling the substrate groove with the gaseous reaction source at a target filling rate; and in response to completion of a deposition process in the reaction cavity, reducing the pressure in the buffer device to a third stable pressure value, and circulating the steps to perform a continuous deposition process. The method can accurately control the dosage of the reaction source, improves the deposition utilization rate, stability and repeatability of the reaction source, and also can improve the deposition efficiency.

Method for creating an electrode on a substrate using a laser assisted deposition process. A metal paste is printed and dried on the substrate to form a conductive layer, and by 2D or 3D inspection, the dimensions of the conductive layer are measured. The substrate is subject to a pretreatment process so as to increase adhesion and / or conduction of the conductive layer to the substrate. An electrode that is produced according to the present method may be used in flexible devices.

The invention provides a reservoir sediment modeling method based on multi-time-sequence multi-beam sounding point cloud data, and relates to the field of reservoir sediment monitoring and modeling, and the method comprises the steps: constructing a reservoir area space grid skeleton model, and collecting multi-time-sequence multi-beam point cloud data and corresponding hydrological auxiliary data; performing space division by adopting an adaptive tile subdivision method, generating multi-level point cloud tiles by adopting a feature point downsampling method, and establishing a three-dimensional composite index; the indexed multi-level point cloud tile set is processed through an anisotropic ICP registration method, and a point cloud tile set of multi-time-sequence registration is obtained; establishing an initial triangulated irregular network sediment model, carrying out differentiated partitioning by utilizing historical hydrological auxiliary data, and carrying out dynamic updating based on a partitioning state to obtain a dynamic reservoir sediment model; and S5, calculating to obtain deposition parameters, and mapping the deposition by adopting a three-dimensional engine to obtain an interactive three-dimensional dynamic deposition situation map. According to the invention, high-precision dynamic visualization of the reservoir sediment deposition process is realized.

The invention particularly relates to a high-conductivity high-binding-force PP composite copper film and a preparation method thereof.According to the high-conductivity high-binding-force PP composite copper film and the preparation method thereof, a direct-current magnetron sputtering technology is adopted, a metallized Cu film is deposited on a PP base material, the binding force and the conductivity of the Cu film are greatly improved by finely regulating and controlling the deposition technology, the resistivity of the Cu film is as low as 9.72 * 10 <-8 > omega.m, and the conductivity of the Cu film is greatly improved. The binding force grade is grade 1 (the substrate temperature is-15 DEG C; the deposition air pressure is 0.24 Pa; the sputtering power is 1.5 kW; and the thickness of the Cu film is about 80 nm). The method is simple in preparation process, high in deposition efficiency and convenient for industrial popularization and application.