4985 results about "Deposition process" patented technology

The present invention is a film deposition apparatus configured to deposit a film on a substrate that has been loaded into a vacuum container via a transfer opening and placed on a table in the vacuum container, by supplying a process gas to the substrate from a process-gas supply part opposed to the table under a vacuum atmosphere, while heating a table surface of the table, the film deposition apparatus comprising: an elevating mechanism configured to vertically move the table between a process position at which the substrate is subjected to a film deposition process, and a transfer position at which the substrate is transferred to and from an external transfer mechanism that has entered from the transfer opening; a surrounding part configured to surround the table with a gap therebetween, when the table is located at the process position, so that the surrounding part and the table divide an inside of the vacuum container into an upper space, which is located above the table, and a lower space, which is located below the table; a vacuum exhaust conduit in communication with the upper space, through which a process atmosphere in the upper space is discharged to create a vacuum in the upper space; a heating unit configured to heat a gas contact region ranging from the upper space to the vacuum exhaust conduit, to a temperature higher than a temperature allowing adhesion of reactant; and a heat insulation part disposed between the heating unit and a lower part of the vacuum container surrounding the lower space.

A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process, one or more alcohols, and one or more metal-containing precursor compounds.

Methods of seasoning a remote plasma system are described. The methods include the steps of flowing a silicon-containing precursor into a remote plasma region to deposit a silicon containing film on an interior surface of the remote plasma system. The methods reduce reactions with the seasoned walls during deposition processes, resulting in improved deposition rate, improved deposition uniformity and reduced defectivity during subsequent deposition.

Embodiments of the invention provide methods for forming hafnium materials, such as oxides and nitrides, by sequentially exposing a substrate to hafnium precursors and active oxygen or nitrogen species (e.g., ozone, oxygen radicals, or nitrogen radicals). The deposited hafnium materials have significantly improved uniformity when deposited by these atomic layer deposition (ALD) processes. In one embodiment, an ALD chamber contains an expanding channel having a bottom surface that is sized and shaped to substantially cover a substrate positioned on a substrate pedestal. During an ALD process for forming hafnium materials, process gases form a vortex flow pattern while passing through the expanding channel and sweep across the substrate surface. The substrate is sequentially exposed to chemical precursors that are pulsed into the process chamber having the vortex flow.

A method of manufacturing a charge storage device is provided. Utilizing the capacity for a precise control of the thickness and the silicon content of a deposited film in an atomic layer deposition process, a stacked gradual material layer such as a hafnium silicon oxide (HfxSiyOz) layer is formed. The silicon content is gradually changed throughout the duration of the HfxSiyOz deposition process. The etching rate for the HfxSiyOz layer in dilute hydrogen fluoride solution is dependent on the silicon content y in the HfxSiyOz layer. The sidewalls of the stacked gradual material layer are etched to form an uneven profile. The lower electrode, the capacitor dielectric layer and the upper electrode are formed on the uneven sidewalls of the stacked gradual material layers, the area between the lower electrode and the upper electrode is increased to improve the capacitance of the charge storage device.

A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and coupling RF plasma bias power or bias voltage to the workpiece.

A method for forming a metal carbide or metal carbonitride film on a substrate using a vapor deposition process. The method includes comprises introducing a first process material, such as a film precursor, to the substrate followed by introducing a second process material, such as a film reducing agent, to the substrate, whereby plasma can be formed during the introduction of the second process material in order to assist reduction of the first process material on the substrate. Additionally, the temperature of the substrate is elevated to a value approximately equal to or greater than the decomposition temperature of the first process material in order to improve adhesion properties for the metal carbide or metal carbonitride film.

Semiconductor patterns are formed by performing trimming simultaneously with the process of depositing the spacer oxide. Alternatively, a first part of the trimming is performed in-situ, immediately before the spacer oxide deposition process in the same chamber in which the spacer oxide deposition is performed whereas a second part of the trimming is performed simultaneously with the process of depositing the spacer oxide. Thus, semiconductor patterns are formed reducing PR footing during PR trimming with direct plasma exposure.