2334 results about "Deposition process" patented technology

The invention provides an electromagnetic field composite powder feeding type plasma arc additive manufacturing formability regulation and control method and system, and relates to the technical field of plasma arc additive manufacturing. The flowing direction and speed of liquid metal in a molten pool in the deposition process are regulated and controlled through the target composite electromagnetic field, and the morphology and the internal organization structure of a deposition layer are controlled; in the process of regulating and controlling the liquid metal in the molten pool, process parameters and molten pool dynamic image data in the deposition process are collected in real time, and a pre-trained state recognition model is used for conducting self-adaptive adjustment on the process parameters of a subsequent deposition layer; and after deposition of each layer is completed, a laser scanning system is adopted for measuring the actual geometric size and surface appearance of the deposition layer, deposition manufacturing of the next layer is executed based on the optimized composite electromagnetic field control parameters, the corrected layered slicing data and the process path, and the execution is executed circularly till manufacturing of the whole workpiece is completed.

The invention relates to the technical field of sewage treatment, in particular to a dynamic simulation method for a lake and reservoir sewage sludge deposition process. The method comprises the following steps: collecting lake and reservoir hydrological station data, carrying out abnormal value filtering and missing value completion, generating a complete hydrological sequence, carrying out water flow state subdivision to obtain flow state hierarchical data, reconstructing a multi-layer hydrodynamic field, forming a hydrological dynamic field set, carrying out suspended matter analysis, and obtaining a hydrological dynamic field model; the method comprises the following steps of: extracting sewage sludge data, deconstructing transportation characteristics of the sewage sludge data, generating transportation dynamic data, performing water body stress tensor decomposition to obtain stress distribution data, performing substance transportation simulation on a complete hydrological sequence by using the stress distribution data, establishing a multi-scale sedimentation dynamic model, acquiring water body sedimentation change data in real time, comparing the water body sedimentation change data with the model, and if inconsistency exists, judging whether the water body sedimentation change data is consistent or not. If yes, the model is finely adjusted in real time, and an optimized multi-scale deposition dynamic model is generated. The more accurate dynamic simulation method for the lake and reservoir sewage and sludge deposition process is achieved.

Metal films, such as molybdenum films are deposited on a semiconductor substrate having one or more recessed features in a deposition process modulated by addition of a halogen-containing compound (e.g., an alkyl halide). In some implementations, a pre-treatment of a substrate with a halogen-containing compound is performed prior to contacting the substrate with a metal-containing precursor and a reducing agent. In some embodiments, the pre-treatment is performed such that the halogen-containing compound modifies the surface of the substrate to a greater degree in a field region of the substrate and near the opening of the recessed feature, as compared to the bottom portion of the recessed feature, where the modification of the substrate inhibits deposition of the metal. As a result, deposition of metals with improved step coverage can be achieved. In some implementations, modulation of deposition by halogen-containing compounds is used to achieve bottom-up metal growth in recessed features.

The invention relates to a silicon-carbon composite material and a preparation method and application thereof.The preparation method comprises the steps that a porous graphite raw material is subjected to acid pickling and smashing to obtain pretreated porous graphite, then the pretreated porous graphite is soaked in a carbon precursor solution in a vacuum mode, carbonization treatment is conducted after centrifugal separation, pores of the porous graphite are filled with carbides, physical activation is conducted, and the silicon-carbon composite material is obtained; the preparation method comprises the following steps: forming pores in a carbide to form a graded pore structure to obtain a porous graphite composite material, then carrying out silicon deposition in a fluidized bed to obtain a uniform nano silicon layer, and then carrying out carbon coating treatment to obtain a silicon-carbon composite material; the graphite with relatively low cost is adopted as a matrix, high capacity and long cycle performance of the graphite-based silicon-carbon negative electrode material are realized through hierarchical pore structure design, carbonization-activation synergistic pore forming and interface deposition process optimization, and the graphite-based silicon-carbon negative electrode material can be applied to the fields of power batteries and high-energy-density energy storage, especially the field of lithium ion batteries and has wide application prospects. The expansion rate of the battery can be reduced, and the specific capacity, cycling stability and safety of the lithium ion battery can be improved.

An additive friction stir deposition device is provided. In one aspect, the device includes a shoulder configured to rotate about a central axis. The shoulder includes a channel extending from a first end of the shoulder to a second end of the shoulder. The channel allows a filler material to pass through the shoulder from the first end towards the second end. The shoulder configured to deposit the filler material as the device is advanced along a deposition surface. The device also includes a wire brush skirt configured to co-rotate with the shoulder and contact the deposition surface as the device is advanced along the deposition surface. The device also includes a gas shroud configured to direct pressurized gas toward the deposition surface and remove contaminants as the device is advanced along the deposition surface.

Vapor deposition processes for forming thin films comprising molybdenum on a substrate are provide. In some embodiments the processes comprise a plurality of deposition cycles in which the substrate is separately contacted with a vapor phase molybdenum precursor comprising a molybdenum halide, a first reactant comprising CO, and a second reactant comprising H2. In some embodiments the thin film comprises MoC, Mo2C, or MoOC. In some embodiments the substrate is additionally contacted with a nitrogen reactant and a thin film comprising molybdenum, carbon and nitrogen is deposited, such as MoCN or MoOCN.

The invention belongs to the technical field, and discloses a film coating processing technology simulation and optimization system based on digital twinning. The system is composed of a data acquisition module, a feature recognition and analysis module, a behavioral digital twinborn simulation module, a coating uniformity evaluation module, a process parameter optimization module and a coating distribution prediction module. The method comprises the following steps: acquiring a three-dimensional roughness digital model of a base material, accurately identifying a micron-sized local rough region and extracting geometrical characteristic parameters of the micron-sized local rough region; constructing a coating growth behavior digital twinborn model based on the geometrical characteristic parameters and the process parameters, and accurately simulating the coating growth process of the local rough area; and establishing a global coating uniformity quantitative evaluation system, and optimizing a process parameter combination by applying machine learning and a genetic algorithm. The system breaks through the limitation of traditional static shadow hypothesis, real-time tracking and accurate simulation of microstructure evolution in the deposition process are achieved, and the coating growth prediction accuracy is remarkably improved.

The invention relates to an in-situ alloying method for an electric arc additive ultrahigh-strength aluminum alloy, in particular to an in-situ alloying method for a double-wire feeding electric arc additive ultrahigh-strength aluminum alloy. The invention aims to solve the problems that the microscopic uniformity of the material is poorer and the ideal mechanical property is difficult to realize due to the fact that the aluminum alloy is easy to form a thick organization structure in a deposition state, and the compactness and the quality stability of the material are seriously influenced due to the fact that solidification shrinkage cavities are easy to appear in the deposition process. By adjusting the wire feeding speed and angle of the two wires, it is ensured that the two wires are molten in the same molten pool, and in-situ alloying of ultrahigh-strength aluminum alloy additive manufacturing is achieved. By optimizing the components and the organization structure, the method effectively improves the component uniformity, the forming stability and the mechanical property of the aluminum alloy, and the high-performance aluminum alloy additive component with high strength, excellent toughness and durability is prepared. The invention belongs to the technical field of additive manufacturing.

The invention relates to the technical field of aluminum-based thin film preparation, and discloses an aluminum-based thin film uniform deposition system based on magnetron sputtering. The system comprises a substrate state detection module, a magnetic field dynamic regulation and control module, a sputtering power regulation module, a deposition process monitoring module and a central control terminal. The substrate state detection module collects and transmits surface flatness data of the substrate in real time, and the central control terminal carries out visual display. The magnetic field dynamic regulation and control module obtains magnetic field intensity correction through a magnetic field gradient algorithm according to the deviation value of the real-time flatness parameter and the standard parameter and sends the magnetic field intensity correction to the sputtering power regulation module. And the sputtering power adjusting module adjusts the sputtering rate of the target material accordingly. The deposition process monitoring module tracks the adjusting process, evaluates the dynamic response performance, generates a stable or fluctuation signal and sends the stable or fluctuation signal to the central control terminal, and the central control terminal triggers sound-light alarm when receiving the fluctuation signal. The system can improve the deposition uniformity and process stability of the aluminum-based thin film.

The invention provides a thermal-mechanical coupling simulation method for a robot-assisted curved surface laser metal deposition process, and belongs to the technical field of laser metal deposition. Calibrating the sectional dimension of the deposition channel; discretizing a continuous simulated deposition path into a plurality of sections, scanning on the curved surface substrate along the discrete path by using the calibrated deposition channel section to form a deposition layer body, and obtaining a geometric model containing the curved surface substrate and a deposition layer; meshing and optimizing the geometric model; setting material attributes, boundary conditions and laser paths of the substrate and the deposition layer, and pre-writing the material attributes in the deposition layer body and hiding the material attributes; and performing laser metal deposition simulation, synchronously activating the material attributes of the substrate and the deposition layer in the laser action area along with the movement of the laser action origin, and calculating to obtain an evolution result of the stress field and the temperature field. According to the method, the calculation precision and efficiency are comprehensively planned, the curved surface free path deposition process modeling is realized, and the evolution conditions of a stress field and a temperature field can be accurately predicted.

The invention provides a heterojunction solar cell and a preparation method thereof, and the method comprises the steps: sequentially arranging oxygen-containing crystalline silicon layers of a first conduction type on the surface, far away from a substrate, of a first passivation layer through employing a set deposition technology, wherein the oxygen atom doping concentration of the oxygen-containing crystalline silicon layers is gradually increased in the direction away from the substrate; on one hand, light oxygen doping is arranged at the interface of the first passivation layer, so that the dark attenuation phenomenon of a heterojunction cell is reduced, and the power off-shift problem of a photovoltaic module is further reduced; on the other hand, heavy oxygen doping is arranged on one side far away from the first passivation layer, so that the optical band gap and the short-circuit current of the crystalline silicon layer on the light receiving surface are effectively improved; and finally, oxygen-free doping is arranged at an interface adjacent to the transparent conducting layer, so that ohmic contact between the oxygen-containing crystal silicon layer and the transparent conducting layer is effectively reduced. Therefore, the comprehensive electrical performance of the heterojunction solar cell is effectively ensured and improved.

Various techniques and apparatus permit fabrication of superconductive circuits. A niobium / aluminum oxide / niobium trilayer may be formed and individual Josephson Junctions (JJs) formed. A protective cap may protect a JJ during fabrication. A hybrid dielectric may be formed. A superconductive integrated circuit may be formed using a subtractive patterning and / or additive patterning. A superconducting metal layer may be deposited by electroplating and / or polished by chemical-mechanical planarization. The thickness of an inner layer dielectric may be controlled by a deposition process. A substrate may include a base of silicon and top layer including aluminum oxide. Depositing of superconducting metal layer may be stopped or paused to allow cooling before completion. Multiple layers may be aligned by patterning an alignment marker in a superconducting metal layer.

The invention discloses a composite modified material for a lithium niobate wafer, and relates to the technical field of nano materials. The material is composed of an anti-corrosion passivation matrix and a function enhancement component, wherein the anti-corrosion matrix adopts a silicon nitride / SiO2 multi-layer composite layer, atomic layer deposition titanium dioxide and magnetron sputtering aluminum oxide to form cascade protection; the functional layer comprises lead sulfide nanoparticles and nano silicon dioxide, and is directionally modified by a silane coupling agent and a perfluoropolyether surfactant. During preparation, PbS nano-particles are synthesized by combining a PECVD-ALD-magnetron sputtering stepped deposition process (200-150 DEG C) with a solvothermal method, and finally, the PbS nano-particles are formed through spin coating-annealing (300-400 DEG C). The optical loss of the material under the wavelength of 1550 nm is smaller than 0.2 dB / cm, the acid and alkali corrosion resistance is larger than 240 h, the lead dissolution rate is smaller than 0.1 ppm, the interface state density is reduced by 2 orders of magnitude, the contradiction between lithium niobate wafer surface degradation, photoelectric property degradation and lead-containing material environment risk is solved, and the material is suitable for 5G optical waveguide and quantum integrated device packaging.

The invention relates to the technical field of laser deposition control, in particular to an unmanned aerial vehicle metal part ultrasonic field auxiliary laser deposition system which comprises the following modules: a data acquisition module for acquiring a molten pool thermal field signal, a sound field signal and a laser scattering signal, and performing sampling, filtering and synchronous processing to obtain molten pool original data; the micro-flow digital twinning module is used for establishing a molten pool micro-flow digital twinning model according to the molten pool original data and simulating molten pool micro-flow behavior to obtain micro-flow prediction data; and the microflow ultrasonic regulation and control module is used for generating an ultrasonic pulse sequence according to the microflow prediction data and applying the ultrasonic pulse sequence to the molten pool to regulate and control the flow field. According to the invention, through the molten pool microflow digital twinning module and the microflow ultrasonic regulation and control module, real-time modeling and regulation and control of the molten pool microflow structure in the complex geometric part deposition process are realized, the problem that local vortexes, shear layer differences and flow field anomalies cannot be identified in real time in the traditional technology is solved, and the molten pool microflow evolution can be actively reconstructed.

The invention discloses an air pressure control method for microwave plasma chemical vapor deposition diamond, and particularly relates to the technical field of microwave plasma chemical vapor deposition, and the method comprises the steps of S1, spectrum real-time monitoring, S2, machine learning prediction, S3, multi-stage air pressure regulation and control, S4, multi-parameter cooperative control, and S5, air pressure closed-loop control. According to the method, high-precision prediction of the optimal air pressure value is achieved through combination of spectrum real-time monitoring and a machine learning model, the diamond deposition quality is effectively improved by means of a multi-stage air pressure regulation and control and multi-parameter cooperative control strategy, the surface flatness and crystallinity are remarkably improved, meanwhile, precise air pressure closed-loop control and efficient gas flow are coordinated, and the precision of the diamond deposition is improved. In addition, all the modules of the system are in close fit, the stability of the deposition environment is guaranteed, the process fluctuation is reduced, the stability and reliability of the whole deposition process are enhanced, and powerful guarantee is provided for high-quality and high-efficiency production of diamonds.

The invention discloses a laminated high-reliability high-power connection terminal and a manufacturing method thereof, and the method comprises the steps: providing composite ceramic as a substrate layer, carrying out the active treatment, depositing a layer of metal film on the substrate layer to form a first current transmission layer, coating a photosensitive material layer, defining a geometric figure of a multi-layer structure, and carrying out the selective etching. Forming a micro-nano channel structure; a heat dissipation material is deposited between the formed first current transmission layer and the heat dissipation channel, the deposition process is repeated, and a multi-layer stacked structure is constructed step by step; a self-healing polymer material is applied to the junction of the current transmission layer and the heat dissipation layer of the adjacent level to be solidified at the key connection node; and packaging the plurality of insulation protection layers by adopting a hot press molding process to obtain the laminated high-reliability high-power connection terminal. Through the application of a multi-layer stacked structure and advanced materials, the transmission efficiency and the thermal management capability are remarkably improved, and the requirements of high performance and high reliability of the connection terminal in a high-power application scene are met.

The embodiment of the invention provides a method, equipment and medium for simulating a wafer processing process. In the method, aiming at a moment in an electrochemical deposition process of a wafer, based on a deposition state of the wafer, a target processing stage to be carried out on the wafer at the moment is determined from a plurality of processing stages of the electrochemical deposition process. And simulating the target processing stage based on the feature structure information of the wafer and the process parameters related to the electrochemical deposition process so as to determine a simulation result corresponding to the moment and aiming at the electrochemical deposition speed. And determining a target parameter value of the process parameter based on the plurality of simulation results respectively determined for the plurality of moments.

The present invention relates to a double-walled steel cofferdam with no bottom and a construction method for deep-water rock capping platform rotary excavation. The BIM three-dimensional simulation technology is used to accurately design the size of the cofferdam module and the position of the preset holes, which greatly improves the accuracy and efficiency of the construction. By solving the problems of module size and layout in the design stage, the installation and commissioning work on site can be significantly reduced, thereby speeding up the construction progress and ensuring the quality of the project. The quick connection method of prestressed tendons and extruded waterproof strips is adopted between the cofferdam modules, which saves a lot of welding work, not only improves the construction efficiency but also reduces the construction difficulty. The guide device used for the lowering of the cofferdam is used for horizontal and vertical displacement and inclination monitoring, which can help the cofferdam lowering process more accurately, and greatly improve the construction efficiency and safety. The comprehensive slotting method of impact drill, rotary drilling drill and grab bucket greatly improves the slotting efficiency and reduces the slotting difficulty.

The invention discloses a preparation method of a perovskite battery and the perovskite battery, and the preparation method of the perovskite battery comprises the steps: providing a substrate which is provided with a first surface; a metal oxide layer is formed on the first surface through an atomic layer deposition technology, and raw materials of the atomic layer deposition technology comprise an organic metal source and a water source; preparing a self-assembled molecular layer on the metal oxide layer by adopting a spraying process; and forming a perovskite active layer, an electron transport layer and a first conductive layer which are arranged in a laminated manner on one side, away from the substrate, of the self-assembled molecular layer. The problem that the compactness of a subsequent self-assembled film layer is reduced due to the process for preparing a metal oxide film layer in the prior art is solved.

A layered thermite composite includes alternating layers of metal oxide and reducing metal deposited upon a substrate. A fuzzy interface layer between each metal oxide layer and reducing metal layer includes reducing metal, reducing metal oxide, and metal oxide at least partially intermixed therein. The fuzzy interface layer forms while moving between chambers in a multi-chamber deposition process which minimizes exposure of the reducing metal to oxygen while moving between chambers. The fuzzy interface layer is not expected to grow in thickness after deposition. The combination of the relative thinness of the fuzzy interface layer as well as the presence of reactants as well as reducing metal oxide maintains the sensitivity of the layered thermit structure to mechanical ignition if the structure is used within a primer.

The invention relates to the technical field of aluminum alloys, in particular to a high-strength aluminum profile and a preparation method thereof. The problems that in the prior art, an aluminum profile is low in mechanical property and insufficient in corrosion resistance are solved. Magnesium, silicon, a copper-cerium alloy and a metal erbium element are added into an aluminum ingot, and melting treatment is carried out step by step, so that a smelted alloy is obtained; the smelted alloy is refined through a refining agent, preliminary die casting, segmented extrusion forming and multi-segment aging treatment are combined, the temperature, time and cooling speed of each process are accurately controlled, and an aging treatment profile is obtained; and zinc deposition treatment is carried out, and the high-strength aluminum profile is prepared by optimizing the zinc deposition process and strictly controlling the temperature and time of primary zinc deposition and secondary zinc deposition and the thickness of a zinc deposition layer. Through the adding of all elements and the synergistic effect of process steps and parameters, the strength and corrosion resistance of the aluminum profile are effectively improved.

The invention discloses a perovskite solar cell module based on insulation layer protection and a packaging process optimization method thereof, through adding an insulation protection layer on the surface of a metal electrode layer and combining a specific deposition process and a packaging process, the risk of short circuit is effectively avoided, and the stability of the cell module is improved at the same time. The perovskite solar cell module sequentially comprises a glass substrate, a transparent conductive oxide layer, a first functional layer, a perovskite layer, a second functional layer, a metal electrode layer, an insulating layer, an adhesive film and a packaging cover plate from bottom to top, and efficient packaging is realized by optimizing laser scribing and insulating layer deposition processes. According to the invention, the long-term stability and the electrical performance of the perovskite assembly are obviously improved, and the perovskite assembly has a wide application prospect.

The invention relates to the technical field of magnetron sputtering, in particular to a magnetron sputtering uniform coating system for LOW-E glass, which comprises a particle distribution detection module, a potential guide control module, a magnetic field track adjustment module, an angle deviation monitoring module and an energy flux density feedback module. According to the method, a dynamic difference index is constructed by extracting a particle number change rate difference value, time sequence tracking of particle distribution is achieved, edge particles are guided to return to bias in combination with electrode array potential adjustment, the non-equilibrium region particle compensation capacity is improved, a magnetic control structure adjusts the track direction according to the particle accumulation behavior, and local reconstruction of a diffusion path is achieved. The reflection path offset data is used for correcting abnormal rebound behaviors and expanding the particle motion intervention range, the energy flux density difference value serves as control input, the electric field and magnetic field action areas are linked, real-time balance adjustment of the deposition process is completed, and the uniformity of the film layer thickness and the space coverage stability are further improved.

The invention belongs to the field of preparation of nano materials, and discloses a CoP / Co (OH) 2 sea urchin-shaped heterojunction catalyst growing on foamed nickel and a preparation method and application of the CoP / Co (OH) 2 sea urchin-shaped heterojunction catalyst. Alkali cobalt carbonate (CoCH) is used as a precursor, a crystalline phase CoP substrate is generated through a low-temperature phosphating method, then the surface of the crystalline phase CoP substrate is uniformly coated with an amorphous Co (OH) 2 layer through an electro-deposition process, and the self-supporting phosphating / hydroxyl heterogeneous structure catalyst (CoP / Co (OH) 2) is successfully constructed. The obtained CoP / Co (OH) 2 shows excellent complete water splitting performance, and is benefited from the high-activity specific surface area (Cdl = 44.66 mF cm <-2 >) and the interface rapid electron conduction characteristic (Rct = 0.43 omega) of a heterogeneous structure; when two electrodes are assembled to fully decompose water, the cell voltage is only 1.780 V when the current density is 250 mA cm <-2 >, and after continuous operation is carried out for 24 hours, the performance is basically kept unchanged, and the voltage fluctuation ratio is lower than 0.5%. CoP / Co (OH) 2 is prepared into a 2 * 2cm < 2 > self-supporting electrode to construct AEMWE, only 2.08 V cell voltage is needed under the ultrahigh current density of 1A cm <-2 >, the AEMWE can stably run for 250 hours, the attenuation rate is 80 mu V h <-1 >, meanwhile, the hydrogen production efficiency is calculated to reach 96.2% through gas metering and Faraday law, and the engineering potential of the AEMWE in large-scale hydrogen production application is verified.

The utility model discloses a mask device, which relates to the technical field of metal mask plates, including a precision metal mask plate and a mask frame. The precision metal mask plate includes an edge area, multiple effective areas, and multiple transition areas. The edge areas are located at both ends of the precision metal mask plate along a first direction, and the edge areas are connected to the mask frame; the multiple transition areas are distributed at intervals along the first direction; each effective area is distributed between two adjacent transition areas, and each effective area is formed with a vapor deposition hole that penetrates the effective area along the thickness direction. The mask device also includes a support bar, both ends of the support bar are fixed to the mask frame, the length direction of the support bar intersects with the first direction, and the size of the support bar along the first direction is not greater than the size of the transition area along the first direction, and the support bar is connected to the corresponding transition area. The utility model has the advantages of reducing the flutter of the precision metal mask plate during the vapor deposition process and improving the color mixing yield.

The invention relates to an atomic layer etching system and method for autonomously generating a process formula. The system is provided with a system digital twinning capable of autonomously generating process formula parameters and subsystem control parameters. The system based on digital twin drive can support accurate simulation, thereby realizing efficient and highly adaptive semiconductor processing. In some embodiments, a system controller may utilize system digital twinning to generate a process recipe based on an optimization program of a predefined cost function. A novel approach is presented herein that provides an initial estimate by utilizing a large number of simulation application cases accumulated for a long term in the background. The concept of the invention can be widely applied to any type of etching and deposition process system using the vacuum plasma chamber.

The invention provides a method for repairing a titanium-aluminum alloy through an additive manufacturing method, and relates to the technical field of metal material surface repairing. The method comprises the steps of surface pretreatment of the titanium-aluminum alloy, preheating treatment, construction of a defect area model, laser path planning and G code generation, a laser directional energy deposition technology, hot isostatic pressing treatment, heat treatment and surface treatment. According to the method, the purity and the mechanical performance of a repaired area are creatively and cooperatively improved through cooperation of a multi-step cleaning process, induction heating pretreatment, CAD modeling, G code generation, a designed special clamp, titanium-aluminum alloy powder components, ultrasonic assistance, precise deposition process parameter control, argon protection, hot isostatic pressing and surface grinding and polishing; mechanical properties and durability; the method is high in resource utilization rate, low in production cost, short in process, easy to operate, high in efficiency and beneficial to industrial large-scale production and popularization.

The invention relates to the field of graphene preparation, and discloses a layer number controllable graphene material preparation process which comprises the following steps: S1, substrate selection: selecting a copper surface or nickel surface substrate, and putting the copper surface or nickel surface substrate into a chemical vapor deposition reaction chamber; s2, raw material preparation: selecting ultra-high-purity natural flaky graphite, and putting the pretreated ultra-high-purity natural flaky graphite into a reaction chamber; s3, reaction precursor: introducing hydrogen and argon into the reaction chamber, and adjusting to preset conditions; s4, reaction condition adjustment: adjusting the temperature and atmosphere to gasify the graphite and deposit the graphite into graphene; and S5, cooling and transferring: spraying a protective layer after cooling, drying, and then transferring to a target substrate. Through the technical scheme of temperature staged regulation and control and hydrogen concentration dynamic regulation, the deposition process of carbon atoms on the substrate is more controlled, the number of growth layers is more stable, the carbon dissolution and precipitation rate is effectively balanced, random accumulation of a multi-layer structure is avoided, and the application of the multi-layer structure in a high-precision electronic device is more reliable.

Methods and systems for depositing vanadium nitride layers onto a surface of the substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium nitride layer onto a surface of the substrate. The cyclical deposition process can include providing a vanadium halide precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process.

The invention provides a multi-mode fusion laser directional energy deposition real-time monitoring method and system, and belongs to the technical field of additive manufacturing. Comprising the steps that real-time data collection is conducted on a molten pool area in the laser directional energy deposition process through synchronous triggering of a multi-source sensor; a distributed clock network is constructed, environment influence parameters are collected in real time in combination with a working condition sensing unit, dynamic modeling and correction are conducted on asymmetric link delay in the clock synchronization process, and space-time alignment of multi-source sensor data is achieved; after the multi-source sensor data subjected to space-time alignment is preprocessed, data-level fusion, feature-level fusion and decision-level fusion are performed in sequence. The state of the molten pool can be accurately monitored in real time, and the quality and stability of the laser directional energy deposition process are improved.