54 results about "Plasma exposure" patented technology

Various embodiments described herein relate to methods, apparatuses, and systems for post-development treatment of a metal-containing photoresist mask to improve lithographic performance. After development, the metal-containing photoresist mask may be exposed to one or more of the following treatments: thermal anneal, plasma exposure, exposure to reactive gases, and selective deposition of a protective film. In some embodiments, the metal-containing photoresist mask is exposed to one or more reactive gases to compositionally change the photoresist mask and / or selectively deposit a protective film on top surfaces and sidewalls of the photoresist mask. The treated photoresist mask may exhibit increased line CD for reduced dose-to-size and improved etch resistance.

Semiconductor devices and methods of manufacturing are presented wherein a gate dielectric is treated within an analog region of a semiconductor substrate. The gate dielectric may be treated with a plasma exposure and / or an annealing process in order to form a recovered region of the gate dielectric. A separate gate dielectric is formed within a logic region of the semiconductor substrate, and a first gate electrode and second gate electrode are formed over the gate dielectrics.

The invention discloses a preparation method of a double-wave infrared detector and a double-wave infrared section detector. The preparation method comprises the following steps: providing a GaSb substrate; sequentially growing a bottom contact layer, a medium wave absorption layer, a barrier layer, a long wave absorption layer and a top contact layer on the GaSb substrate; performing primary deposition of a passivation layer on the surface of the top contact layer, and performing primary etching from the absorption layer to the top contact layer; performing secondary deposition of a passivation layer in a covering manner, and performing secondary etching from the top contact layer to the bottom contact layer; depositing a passivation layer for the third time in a covering manner; holes are formed in the passivation layer of the table top and the passivation layer of the common electrode area, UBM metal TiPtAu is evaporated at the holes, and a detector chip is manufactured; the plasma exposure time of the surface of the absorption layer is reduced to the greatest extent; the detector chip and the In column of the reading circuit are interconnected to form the detector, and the prepared detector can obtain medium-wave infrared and long-wave infrared image information by using a single detector, and has excellent detection, identification and identification capabilities.

The present invention provides a tetrazole compound, a pharmaceutical composition thereof and a use thereof. The compound of the present invention has a brand-new structure, a low clearance rate, high plasma exposure, good oral bioavailability, and good pharmacokinetic properties, and is conducive to drug development. The compound of the present invention or a pharmaceutically acceptable salt thereof can be used for preventing and / or treating pain, including neuropathic pain, etc.

Many drugs useful in treating cancer are metabolized by CYP2C8 enzymes, by CYP3A4 enzymes, or both. The effects of concomitant administration of relacorilant and paclitaxel, a drug used to treat cancer that is a substrate for both CYP2C8 and CYP3A4, are disclosed herein.Relacorilant potently inhibited CYP2C8 and CYP3A4 in in vitro tests, indicating that co-administration of relacorilant and paclitaxel would increase paclitaxel plasma exposure more than 5-fold in vivo, requiring significant reductions in paclitaxel doses when co-administering paclitaxel with relacorilant.Surprisingly, paclitaxel plasma exposure increased only by about 80% instead of the expected more than 5-fold increase expected with concomitant relacorilant and paclitaxel administration. Applicant discloses safe methods of co-administering relacorilant and paclitaxel by reducing the dose of paclitaxel to about half the paclitaxel dose used when paclitaxel is administered alone. Relacorilant and such reduced doses of paclitaxel may be co-administered to treat cancer, e.g., ovarian or pancreatic cancer.

The present invention features compositions including sepiapterin, or a pharmaceutically acceptable salt thereof, and methods for the treatment of BH4-related disorders. In some embodiments, these compositions and methods result in an increase in plasma, CSF, and / or brain exposure of sepiapterin.

Relacorilant is useful in the treatment of hypercortisolism and cancer. Many drugs useful in treating hypercortisolism or cancer are metabolized by CYP2C9 enzymes. The effects of concomitant administration of relacorilant and a CYP2C9 substrate are disclosed herein.Relacorilant potently inhibited CYP2C9 in an in vitro test, indicating that co-administration of relacorilant and a CYP2C9 substrate would be expected to increase the CYP2C9 substrate plasma exposure more than five-fold in vivo. Significant reductions in CYP2C9 substrate doses would be expected to be required when administered with relacorilant.Surprisingly, no such increase in plasma exposure was seen in human studies. Applicant discloses that relacorilant may be safely co-administered with unmodified doses of a CYP2C9 substrate such as, e.g., tolbutamide, glimepiride, and glipizide. Relacorilant and unmodified doses of CYP2C9 substrate such as tolbutamide, glimepiride, and glipizide may be co-administered to treat hypercortisolism, or may be co-administered to a cancer patient.

Provided are methods for increasing the deposition rate and improving the film properties of silicon-containing films via plasma-enhanced atomic layer deposition (PEALD) by utilization of hydrogen peroxide. In particular, an exposure to hydrogen peroxide before, during, or after the plasma exposure step of a low temperature PEALD process utilizing silicon-containing compounds results in increased deposition rates and superior film characteristics as compared to PEALD processes using plasma alone. Additionally, the disclosed process may utilize non-oxidizing plasmas, increasing the range of substrates to which the process can be applied relative to those compatible with oxidizing plasmas.

Articles may include at least non-PFAS elastomers and additives. The non-PFAS elastomers may include at least one of polyacrylate elastomer (ACM), polyethylene acrylate elastomer (AEM), ethylene propylene diene monomers (EPDM) elastomer, ethylene propylene monomers (EPM), nitrile butadiene rubbers (NBR) and hydrogenated nitrile butadiene rubbers (HNBR) elastomer. Under a six-hour remote NF3 plasma exposure at 150° C., the non-PFAS elastomers may have a weight change less than or equal to about 2%. The additives may include fillers, which include at least one of carbon black, silicon carbide, silica, barium sulfate, carbon, clay, talc, metallic fillers, metallic nitrides, and / or organic fillers. The organic fillers may include polyether ether ketone (PEEK), polyaryl ether ketone (PAEK), or nylon. The non-PFAS elastomer may have a weight percentage from about 25% to about 99%. The additives have a weight percentage from about 1% to about 67%.

A method and apparatus for growing an oxide layer within a feature of a substrate is described herein. The method is suitable for use in semiconductor manufacturing. The oxide layer is formed by exposing a substrate to both a high pressure oxidant exposure and a lower pressure oxygen containing plasma exposure. The high pressure oxidant exposure is performed at a pressure of greater than 10 Torr, while the lower pressure oxygen containing plasma exposure is performed at a pressure of less than about 10 Torr. The features are high-aspect ratio trenches or holes within a stack of silicon oxide and silicon nitride layers.

The present invention features compositions including sepiapterin, or a pharmaceutically acceptable salt thereof, and methods for the treatment of BH4-related disorders. In some embodiments, these compositions and methods result in an increase in plasma. CSF, and / or brain exposure of sepiapterin.

A doped or undoped silicon carbide (SiCxOyNz) film can be deposited in one or more features of a substrate for gapfill. After a first thickness of the doped or undoped silicon carbide film is deposited in the one or more features, the doped or undoped silicon carbide film is exposed to a remote hydrogen plasma under conditions that cause a size of an opening near a top surface of each of the one or more features to increase, where the conditions can be controlled by controlling treatment time, treatment frequency, treatment power, and / or remote plasma gas composition. Operations of depositing additional thicknesses of silicon carbide film and performing a remote hydrogen plasma treatment are repeated to at least substantially fill the one or more features. Various time intervals between deposition and plasma treatment may be added to modulate gapfill performance.

The invention belongs to the field of biological medicine, and particularly relates to application of vernoniamycin or a derivative thereof in preparation of a medicine for treating gastric cancer. The invention finds the new application of the ivernonamycin in treating the gastric cancer, the action effect of the ivernonamycin in human primary gastric cancer organs is obviously reduced by more than 4 times compared with that of cis-platinum, and the ivernonamycin has obvious advantages compared with the common chemotherapeutic drug cis-platinum. Besides, in pharmacokinetic experiments of rats and mice, the ivernoniamycin has high plasma exposure and good oral bioavailability, and is suitable for oral administration. In a whole blood environment, the vernoniamycin is basically not metabolized within 120 minutes, and has very high stability. In various types of liver microsomes, the amount of the turtledoamycin can be maintained to be 80% within 60 min, only the turtledoamycin can be seen, the turtledoamycin has a good inhibiting and killing effect on gastric cancer, the pharmacokinetics is excellent, the stability in organisms is high, and the effect can be continuously achieved through oral administration.

The invention provides a GK001 solid preparation as well as a preparation method and application thereof. The solid preparation comprises the following components: a GK001 amorphous solid dispersion, an excipient, a diluent, a disintegrating agent and a lubricant, the GK001 has a structure as shown in a formula I which is described in the specification. According to the invention, GK001 is creatively prepared into a solid preparation in the form of amorphous solid dispersion, and the solid preparation has excellent stability and fluidity and high oral availability. The preparation is moderate in hardness and stable in quality, the process requirements are met, and the friability and disintegration time limit both meet the requirements; the dissolution rate of the preparation is basically consistent with the drug content, the plasma exposure is high, and the oral dose of the drug and the plasma exposure are in a linear relationship.

Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

Articles may include at least non-PFAS elastomers and additives. The non-PFAS elastomers may include at least one of polyacrylate elastomer (ACM), polyethylene acrylate elastomer (AEM), ethylene propylene diene monomers (EPDM) elastomer, ethylene propylene monomers (EPM), nitrile butadiene rubbers (NBR) and hydrogenated nitrile butadiene rubbers (HNBR) elastomer. Under a six-hour remote NF3 plasma exposure at 150°C, the non-PFAS elastomers may have a weight change less than or equal to about 2%. The additives may include fillers, which include at least one of carbon black, silicon carbide, silica, barium sulfate, carbon, clay, talc, metallic fillers, metallic nitrides, and / or organic fillers. The organic fillers may include polyether ether ketone (PEEK), polyaryl ether ketone (PAEK), or nylon. The non-PFAS elastomer may have a weight percentage from about 25% to about 99%. The additives have a weight percentage from about 1% to about 67%.

To provide methods of treating BH4-related disorders such as CNS disorder.SOLUTION: A method comprises a step for administering to a subject an effective amount of sepiapterin or a pharmaceutically acceptable salt thereof, without food. Preferably, the effective method should be an amount sufficient to produce a concentration of at least 0.5 ng / mL in a plasma of the subject within one hour of administration.SELECTED DRAWING: None

This application relates to the field of pharmaceutical technology, and in particular to a topical ointment formulation and its preparation method. The formulation uses Sonicate as the active ingredient, combined with petrolatum, liquid paraffin, a solubilizing and penetration-enhancing system, and emulsifiers as excipients, to form an O / W type cream, an oil-based or water-soluble ointment. The preparation process employs a low-temperature dosing method at 40°C to ensure drug activity and inhibit crystallization. This application achieves high-concentration retention in local skin tissue through topical administration, significantly reducing radiation damage scores and pathological damage, while resulting in extremely low systemic plasma exposure, avoiding the systemic toxicity of oral administration, and providing a safe and efficient means for the clinical prevention and treatment of radiation-induced skin damage.

In one aspect, the disclosure relates to a method for modifying or treating a cellulose material, comprising: combining a cellulose feedstock and a first solvent, thereby forming a cellulosic suspension; mixing the cellulosic suspension under high shear; and treating the cellulosic suspension with a reaction treatment comprising: incubation of the cellulosic suspension at a temperature of at least 30°C; microwave irradiation exposure; plasma exposure; ultrasound exposure; grinding; ball-milling; extrusion; a sequence thereof; or any combination thereof. In another aspect, the disclosure relates to compositions produced by the methods disclosed herein. In another aspect, the disclosure relates to filaments, yarns, films, sheets, cast materials, molded materials, articles, and any combination thereof comprising the compositions produced by the methods disclosed herein. In addition, the disclosure provides for compositions, fibers, filaments, yarns, casts, molds, articles, clothing, and the like, that include the modified or treated cellulose.

The application discloses a levodopa plasma exposure reconstruction and pharmacokinetics inference method, system, device and storage medium based on multi-body fluid observation fusion and capillary blood anchor updating, the application breaks through the limitation of single body fluid observation through multi-body fluid observation fusion, can more comprehensively and accurately obtain the relevant information of levodopa in the body, provides more abundant and accurate data support for plasma exposure reconstruction, secondly, the capillary blood anchor updating mechanism can calibrate and update the related data in real time and dynamically, ensure the accuracy and timeliness of plasma exposure reconstruction, the combination of multi-body fluid observation fusion and capillary blood anchor updating mechanism innovation effectively improves the accuracy of levodopa plasma exposure reconstruction and the reliability of pharmacokinetics inference, can better assist medical personnel to understand the metabolism of levodopa in the patient's body, has important clinical application value and broad market prospect.

A system and method including a processing device. The processing device receives data including one or more plasma exposure durations of a plasma process. The plasma exposure duration are associated with a set of controlled elements. The processing device causes a each set of controlled elements to switch between a first mode of operation and a second mode of operation. Each set of controlled elements expose appropriate portion of a substrate to the plasma related fluxes. The first set of controlled elements process the substrate at an increased rate while operating in the first mode of operation relative to the second mode of operation. The processing device causes each set of controlled elements to operate in the first mode of operation for the appropriate time duration based on the received plasma exposure duration data.

A system and method including a processing device. The processing device receives data including one or more plasma exposure durations of a plasma process. The plasma exposure duration are associated with a set of controlled elements. The processing device causes a each set of controlled elements to switch between a first mode of operation and a second mode of operation. Each set of controlled elements expose appropriate portion of a substrate to the plasma related fluxes. The first set of controlled elements process the substrate at an increased rate while operating in the first mode of operation relative to the second mode of operation. The processing device causes each set of controlled elements to operate in the first mode of operation for the appropriate time duration based on the received plasma exposure duration data.

Methods of forming SiCON films comprising sequential exposure to a silicon precursor and a mixture of alkanolamine and amine reactants and an optional plasma are described. Methods of forming a silicon-containing film comprising sequential exposure to a silicon precursor and an epoxide with an optional plasma exposure are also described.

The invention discloses a prodrug of a small molecule compound with a naphthylamine structure and application of the prodrug. In the application, the prodrug is as shown in the following formula I, and each R group is as shown in the upper and lower positions of the invention. The prodrug of the small molecule compound with the naphthylamine structure is good in stability and permeability and high in oral bioavailability, and compared with an original drug compound I-1, after the prodrug is administered, the plasma exposure amount is increased, or the retention time is long, the AUC is high, the safety is good, the adverse reaction is few, and the patent medicine prospect is good. # imgabs0 #

The present invention provides a method, apparatus, and medium for oxidizing features formed on a half-dimensional device structure. [Solution] Suitable for use in semiconductor manufacturing. The oxide layer is formed by exposing the substrate to both high-pressure oxidizing agent exposure and low-pressure oxygen-containing plasma exposure. High-pressure oxidizing agent exposure is performed at a pressure exceeding 10 Torr, and low-pressure oxygen-containing plasma exposure is performed at a pressure of less than approximately 10 Torr. Features are high aspect ratio trenches or holes in a stack of silicon oxide and silicon nitride layers.

Lithium niobate (LiNbO3, LN) is a ferroelectric crystal of interest for integrated photonics owing to its large second-order optical nonlinearity and the ability to impart periodic poling via an external electric field. However, on-chip device performance based on thin-film lithium niobate (TFLN) is presently limited by propagation losses arising from surface roughness on the nano- and microscale. Atomic layer etching (ALE) can smooth these features and thereby increase photonic performance. In one embodiment disclosed herein, an isotropic ALE process for x-cut MgO-doped LN uses sequential exposures of H2 and SF6 / Ar plasmas. We observed an etch rate of 1.59±0.02 nm / cycle with a synergy of 96.9%. ALE can be achieved with SF6 / O2 or Cl2 / BCl3 plasma exposures in place of the SF6 / Ar plasma step with synergies of 99.5% and 91.5% respectively. The process decreased the sidewall surface roughness of TFLN waveguides etched by physical Ar+ milling by 30% without additional wet processing.

Semiconductor devices and methods of manufacturing are presented wherein a gate dielectric is treated within an analog region of a semiconductor substrate. The gate dielectric may be treated with a plasma exposure and / or an annealing process in order to form a recovered region of the gate dielectric. A separate gate dielectric is formed within a logic region of the semiconductor substrate, and a first gate electrode and second gate electrode are formed over the gate dielectrics.

The present invention presents pharmaceutical compositions comprising sepiapterin, or a pharmaceutically acceptable salt thereof, and methods for treating BH4-related disorders. In some embodiments, these compositions and methods result in increased plasma exposure to BH4.

Provided are methods for increasing the deposition rate and improving the film properties of silicon-containing films via plasma-enhanced atomic layer deposition (PEALD) by utilization of hydrogen peroxide. In particular, an exposure to hydrogen peroxide before, during, or after the plasma exposure step of a low temperature PEALD process utilizing silicon-containing compounds results in increased deposition rates and superior film characteristics as compared to PEALD processes using plasma alone. Additionally, the disclosed process may utilize non-oxidizing plasmas, increasing the range of substrates to which the process can be applied relative to those compatible with oxidizing plasmas.

A compound, a chelate and the use thereof in magnetic resonance imaging, belonging to the technical field of medical imaging. Specifically disclosed is a compound as represented by general formula (I) or a stereoisomer thereof, a pharmaceutically acceptable salt thereof, or a mixture thereof, which can significantly increase plasma exposure, has high bioavailability, can prolong an in vivo imaging time window, and has the advantages of long-acting and low-dose imaging. The present invention also has good clearance characteristics and low risk of tissue residues, thereby reducing the potential risk of release of free Gd3+, and providing a long-acting, low-dose and high-safety magnetic resonance contrast solution for clinical use.