Method of forming conformal metal silicide films

Abstract

A method is provided for forming a metal silicide layer on a substrate. According to one embodiment the method includes providing the substrate in a process chamber, exposing the substrate at a first substrate temperature to a plasma generated from a deposition gas containing a metal precursor, where the plasma exposure forms a conformal metal-containing layer on the substrate in a self-limiting process. The method further includes exposing the metal-containing layer at a second substrate temperature to a reducing gas in the absence of a plasma, where the exposing steps are alternatively performed at least once to form the metal silicide layer, and the deposition gas does not contain the reducing gas. The method provides conformal metal silicide formation in deep trenches with high aspect ratios.

Description

[0001] Cross References to Related Applications [0002] This application is related to and claims priority from US Provisional Application Serial No. 61 / 591843 (Ref. TTCA-389Pro), filed January 27, 2012, the entire contents of which are incorporated herein by reference. This application is related to and claims priority from US Application Serial No. 13 / 427343, filed March 22, 2012 (Ref. TTCA-389), the entire contents of which are incorporated herein by reference. technical field [0003] The present invention generally relates to the formation of conformal metal suicide films on substrates using vapor deposition. The substrate may include deep trenches with high aspect ratios used in semiconductor devices. Background technique [0004] In the semiconductor industry, the minimum feature size of microelectronic devices is approaching the deep submicron era to meet the demand for faster, lower power consumption microprocessors and digital circuits. For example, low-resistiv...

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Problems solved by technology

Conformal deposition of these films is often required, which is very challenging for very deep trenches

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