22 results about "Salicide" patented technology

The invention provides a preparation method of a semiconductor structure and the semiconductor structure, and particularly relates to the technical field of semiconductors. The preparation method of the semiconductor structure comprises the following steps: providing an initial semiconductor structure, wherein a metal layer is deposited on the initial semiconductor structure; performing first annealing treatment on the metal layer to generate a metal silicon compound; processing the initial semiconductor structure by using a first cleaning solution, wherein the first cleaning solution is a mixed solution of sulfuric acid, hydrogen peroxide and ferrous ions; processing the initial semiconductor structure by using a second cleaning solution, wherein the second cleaning solution is a mixed solution of hydrochloric acid, hydrogen peroxide and water; and performing second annealing treatment on the metal silicon compound to generate a self-aligned silicide layer. By adopting the preparation method of the semiconductor structure, the removal temperature of the unreacted metal layer can be reduced, the influence and damage of high temperature on the thermal stability of the metal silicon compound are avoided, and the product yield is improved.

The invention provides a semiconductor structure and a forming method thereof, and the semiconductor structure comprises a substrate which comprises a first device region and a second device region; the first gate structure is positioned on a part of the surface of the substrate in the first device region; the second gate structure is positioned on a part of the surface of the substrate in the second device region; the first source-drain doped region is positioned in the substrate at two sides of the first gate structure; the second source-drain doped region is positioned in the substrate at two sides of the second gate structure; the silicide barrier layer is located on the side wall of the first gate structure, and the silicide barrier layer further covers the surface of the second source-drain doped region and the top surface and the side wall surface of the second gate structure; the silicide layer is located on the surface of the first source-drain doped region and the top surface of the first gate structure; according to the method, the side wall of the gate structure in the region where the silicide layer needs to be formed is adjusted, the silicide barrier layer is directly used as the side wall corresponding to the first gate structure, compared with a traditional process, the distance between the gate structures is increased, a large space is provided for forming the silicide layer, and the forming difficulty of the silicide layer is reduced.

The chip includes a first epitaxial (epi) layer, a second epi layer, a gate between the first epi layer and the second epi layer, and one or more channels coupled between the first epi layer and the second epi layer, wherein the one or more channels pass through the gate. The chip also includes a first salicide layer formed on a bottom surface of the first epi layer.

A semiconductor device includes a semiconductor layer including a trench, wherein the trench is adjacent a mesa, a first metal silicide layer on a top portion of the mesa, and a second metal silicide layer on a bottom portion of the trench. The first metal silicide layer has a thickness that is no more than about 1 to 1.5 times greater than a thickness of the second metal silicide layer. Related methods of forming a semiconductor device are disclosed.

A power device includes: a semiconductor layer, a well region, a body region, a gate, a source, a drain, a first salicide block (SAB) layer and a second SAB layer. The first SAB layer is formed on a top surface of the semiconductor layer, and is located between the gate and the drain, wherein a part of the well is located vertically below and in contact with the first SAB layer. The second SAB layer is formed vertically above and in contact with the first SAB layer.

Apparatus and methods for shielded-gate trench power MOSFETs are disclosed herein. The power MOSFETs are fabricated using a self-aligned gate poly silicide to achieve low gate resistance. Accordingly, the power MOSFETs can be used in high speed applications operating with fast transistor switching speeds. Moreover, the self-aligned gate poly silicide processing can be achieved in relatively few processing steps, and thus can avoid the cost and / or complexity associated with conventional silicidation techniques for trench power MOSFETs. In particular, silicidation can include applying a silicide that is self-aligned to a gate oxide without an additional mask.

The invention relates to a method for forming a semiconductor device. According to the forming method, after a metal layer used for reacting with silicon is formed on the surface of a semiconductor structure, silicon is doped in the part, covering a silicon-containing conductive region, of the metal layer, and then the metal layer reacts with the silicon in the silicon-containing conductive region and the silicon doped in the metal layer, so that the silicon-containing conductive region and the silicon doped in the metal layer are formed. A self-aligned silicide layer is formed on the surface area of the silicon-containing conductive area, a metal silicification reaction is carried out in the silicon-containing conductive area and a metal layer, so that a thicker self-aligned silicide layer can be obtained, and the top surface of the self-aligned silicide layer is higher than that of the silicon-containing conductive area compared with the prior art. Compared with the prior art, influence on the silicon-containing conductive region is small, when the contact hole exposing the self-aligned silicide layer is formed, a process window is large, and the risk that the bottom of the contact hole penetrates through the self-aligned silicide layer to affect the reliability of the device is reduced.

A semiconductor device structure is provided. The semiconductor device structure includes a fin spacer alongside a fin structure, a source / drain structure over the fin structure, and a salicide layer along a surface of the source / drain structure. A bottom portion of the salicide layer is in contact with the fin spacer. The semiconductor device structure also includes a capping layer over the salicide layer. A portion of the capping layer directly below the bottom portion of the salicide layer is in contact with the fin spacer. The semiconductor device structure also includes a dielectric layer over the capping layer. The dielectric layer is made of a different material than the capping layer.

The invention provides a semiconductor device metal ohmic contact preparation method and a semiconductor structure. The method comprises the following steps: providing a substrate; after a stress material layer is formed on one side of the substrate, annealing treatment is carried out; carrying out patterning processing, and opening the stress material layer of the target area; and depositing a metal layer, and carrying out annealing treatment, so that the metal layer reacts with the substrate to form the metal silicide. According to the semiconductor device metal ohmic contact preparation method and the semiconductor structure, the stress memory technology and the barrier layer technology in self-aligned silicide formation are combined, the stress material layer serves as the barrier layer in self-aligned silicide growth, additional deposition of the barrier layer is not needed, the preparation process of the semiconductor structure is simplified, and the production efficiency is improved. And the preparation efficiency of the semiconductor structure is improved.

The present invention provides a method for preparing a semiconductor structure and the semiconductor structure thereof, specifically relating to the field of semiconductor technology. The method for preparing the semiconductor structure comprises: providing an initial semiconductor structure, on which a metal layer is deposited; performing a first annealing treatment on the metal layer to generate a metal silicon compound; treating the initial semiconductor structure with a first cleaning solution, wherein the first cleaning solution is a mixed solution of sulfuric acid, hydrogen peroxide, and ferrous ions; treating the initial semiconductor structure with a second cleaning solution, wherein the second cleaning solution is a mixed solution of hydrochloric acid, hydrogen peroxide, and water; and performing a second annealing treatment on the metal silicon compound to generate a self-aligned silicide layer. The method for preparing the semiconductor structure of the present invention can reduce the removal temperature of the unreacted metal layer, avoid the influence and damage of high temperature on the thermal stability of the metal silicon compound, and improve product yield.

The present application relates to the technical field of semiconductor manufacturing, in particular to a method for removing unreacted nickel platinum alloy in self-aligned silicide, comprising the following steps: a) providing a wafer with a metal layer on the surface; the metal layer comprises nickel platinum alloy; b) forming a porous titanium dioxide layer on the surface of the metal layer; c) removing the metal layer at room temperature by using a photocatalytic reaction; d) removing the porous titanium dioxide layer by using a hydrogen peroxide complexation reaction; e) sequentially performing impurity removal, water washing and drying on the surface of the wafer to obtain self-aligned silicide. Compared with the prior art, the method for removing unreacted nickel platinum alloy in self-aligned silicide provided by the present application realizes overall good interaction by using specific process steps and conditions, can remove unreacted nickel platinum alloy in self-aligned silicide at room temperature, avoids the influence of high-temperature wet process on the thermal stability of nickel silicide compound, and does not lose nickel silicide, thereby improving the process stability of self-aligned silicide, and further improving the product yield.

The present invention provides a method for manufacturing a flash memory device. A gate structure is formed on a substrate, and a tunneling oxide layer and a word line are formed on both sides of the gate structure. The tunneling oxide layer covers the substrate, and the word line covers the sidewalls of the gate structure and a part of the top surface of the tunneling oxide layer; the exposed part of the tunneling oxide layer is thinned; a first sidewall is formed to cover a part of the sidewalls of the word line and a part of the top surface of the tunneling oxide layer, and a recess is formed at the surface of the word line not covered by the first sidewall; a self-aligned silicide blocking layer with an opening is formed to expose at least the gate structure, the word line, and the first sidewall. By thinning the thickness of the tunneling oxide layer, the present invention reduces or avoids damage to the tunneling oxide layer during subsequent etching processes. By controlling the etching process time of the self-aligned silicide blocking layer, the residual oxide in the recess is reduced or avoided, ensuring the formation of a good metal silicide layer in the subsequent process, reducing the contact resistance of the flash memory device, and improving the performance and stability of the flash memory device.

The application provides a method for improving the performance of a CMOS image sensor, which comprises the following steps: forming an N well and a P well on a P substrate; forming a first N+ region and a second N+ region in the P well near the upper surface of the P substrate; forming a transfer tube gate between the N well and the P well and a reset tube gate between the first N+ region and the second N+ region on the upper surface of the P substrate; forming an amorphous layer on the side of the N well shallow region near the transfer tube gate; forming a Pin barrier layer on the lower surface of the amorphous layer; and forming a self-aligned silicide barrier layer, which covers the upper surface of the amorphous layer and continuously extends to the surface of the transfer tube gate, the upper surface of the first N+ region, the surface of the reset tube and the upper surface of the second N+ region. The method can reduce the plasma-induced damage caused by subsequent processes, reduce the generation of dark current and white pixels, improve the full well capacity of the photodiode and reduce the dark current generated by the defects at the interface between Si and silicon oxide.

To provide a manufacturing method of a semiconductor device capable of miniaturizing a semiconductor element manufactured by a STI process.SOLUTION: A manufacturing method of a semiconductor device includes: an element isolation part forming step of forming a plurality of element isolation parts by using a STI process across a portion where a first well region and a second well region are connected; a protective element forming step of forming a protective element in a portion excluding a region where the plurality of element isolation parts are formed; an insulating film forming step of forming an insulating film by photolithography so as to cover two adjacent element isolation parts and at least a part of a region between the two element isolation parts in plan view of the semiconductor substrate; an insulating film etching step of etching the insulating film; a film forming step of forming a film by sputtering using the etched insulating film; and a salicide layer forming step of forming a salicide layer in the protective element by heat treatment.SELECTED DRAWING: Figure 3

The invention relates to the technical field of semiconductor manufacturing, in particular to a method for removing unreacted nickel-platinum alloy in self-aligned silicide, which comprises the following steps of: a) providing a wafer with a metal layer on the surface; the metal layer comprises nickel platinum alloy; b) forming a porous titanium dioxide layer on the surface of the metal layer; c) removing the metal layer at normal temperature by adopting a photocatalytic reaction; d) removing the porous titanium dioxide layer by adopting a hydrogen peroxide complexation reaction; and e) sequentially carrying out impurity removal, water washing and drying on the surface of the wafer to obtain the self-aligned silicide. Compared with the prior art, the method for removing the unreacted nickel-platinum alloy in the self-aligned silicide, provided by the invention, adopts specific process steps and conditions, realizes relatively good overall interaction, can remove the unreacted nickel-platinum alloy in the self-aligned silicide at normal temperature, avoids the influence of a high-temperature wet process on the thermal stability of the nickel-silicon compound, and improves the yield of the nickel-silicon compound. And the nickel silicide is not lost, so that the stability of the self-aligned silicide process is improved, and the product yield is further improved.

The invention provides a method for forming a self-aligned silicide barrier layer. The method comprises the following steps: sequentially depositing a bottom dielectric layer, an etching stop layer and a top dielectric layer on a substrate to form a composite film layer; defining a retaining region of the barrier layer through photoetching; etching the top dielectric layer and stopping on the etching stop layer; carrying out adhesive wet cleaning to remove the residual top dielectric layer in the narrow gap area; removing the photoresist; removing the exposed etching stop layer; heat treatment; and removing the exposed bottom dielectric layer. According to the method, the photoresist is utilized to protect the film layer in the LDMOS region from thickness loss while the residual dielectric layer in the CMOS narrow-spacing region is thoroughly removed through the adhesive wet cleaning process, so that the contradiction between the thick film layer requirement and fine-spacing cleaning is solved, and the compatibility of the pressure resistance of the high-voltage device and the contact hole process is ensured.

The application provides a preparation method of a flash memory device, comprising the following steps: providing a substrate with a stacked floating gate layer, an ONO layer and a control gate layer formed thereon, the substrate is provided with a groove, and the groove is provided with a side wall structure; forming a conductive contact layer by using a self-aligned silicide process; performing selective etching on the side wall structure by using an SPT process; and forming an interlayer insulating medium layer. The application performs selective etching on the side wall structure by using an SPT (stress proximity technique) process. Since the etching selectivity of the SPT process on some material layers (silicon nitride layers) is high, the filling of the interlayer insulating medium layer in the groove is improved by performing targeted thinning on some material layers in the side wall structure after the formation of the conductive contact layer (self-aligned silicide process), so that the filling of the interlayer insulating medium layer can be improved without affecting the electrical performance of the device, the void defects are avoided, and the device yield is further improved.

The invention provides a method for forming a CMOS (Complementary Metal Oxide Semiconductor) image sensor integrated with a stress memory technology. The method comprises the following steps: depositing a first oxide layer and a stress medium layer on the surface of a substrate subjected to source and drain injection; retaining the stress medium layer of the N-type logic region and removing other regions; performing rapid thermal annealing to generate a stress memory effect, and then removing the residual layer; depositing a second oxide layer and a nitride layer; and reserving the laminated structure of the pixel region through photoetching, and forming a metal silicide in the logic region. By optimizing the stress memory cycle and the self-aligned silicide blocking process, the performance of the logic NMOS device is remarkably improved, the dark current of the pixel area is effectively inhibited, and both the image quality and the circuit speed are considered.

The utility model provides a photoetching alignment mark structure which comprises a substrate, a dielectric substance layer located on the substrate and a photoetching alignment mark located in the dielectric substance layer, and a groove is formed in the photoetching alignment mark. Compared with the prior art in which photoetching alignment marks are formed in dielectric substance layers which are sequentially positioned on the substrate and the self-alignment silicide, the photoetching alignment mark is formed in the dielectric substance layer positioned on the substrate, so that the definition of the photoetching alignment mark can be improved, and the optical alignment precision and the overlay precision are improved.

The invention provides a transistor. The transistor includes a well region arranged in a substrate, a gate structure arranged on the well region, a gate oxide layer, wherein a first portion of the gate oxide layer is thicker than a second portion of the gate oxide layer, a first doped region and a second doped region arranged in the well region, wherein along the horizontal direction, the distance between the first doped region and the first portion of the gate oxide layer is greater than the distance between the second doped region and the second portion of the gate oxide layer, and a salicide block located on the substrate and at one side of the gate structure, wherein the salicide block is located between the first portion of the gate oxide layer and the first doped region.

The chip includes a first epitaxial (epi) layer, a second epi layer, a gate between the first epi layer and the second epi layer, and one or more channels coupled between the first epi layer and the second epi layer, wherein the one or more channels pass through the gate. The chip also includes a first salicide layer formed on a bottom surface of the first epi layer.

A semiconductor cascade equipment includes a physical co-deposition (PCD) device and a rapid thermal annealing (RTU) device. An oxygen-free chamber is located between the PCD and RTU devices, with valves installed at both ends of the oxygen-free chamber where they connect to the PCD and RTU devices. A wafer transfer structure is located at the bottom of the oxygen-free chamber, comprising a slide rail, a vacuum chuck, and a robotic arm mounted on the slide rail. The robotic arm transfers wafers from the wafer cassette of the PCD device to the vacuum chuck, or from the vacuum chuck to the wafer cassette of the RTU device. This invention effectively reduces the risk of cobalt being oxidized to cobalt oxide, improving the quality of self-aligned silicides. It also eliminates the need for a titanium nitride deposition chamber, reducing the titanium nitride deposition run time and the interval between cobalt deposition and RTU, thus increasing production line efficiency.