263 results about "Anti-reflective coating" patented technology

The invention relates to the technical field of coating thickness measurement, in particular to an anti-reflection coating thickness measurement method and system based on a dual-light-path infrared reflection method, and the method comprises the steps: obtaining a reflection signal of a light beam of a measurement light path incident to the surface of a to-be-measured sample coating and a reflection signal of a light beam of a reference light path incident to the surface of a standard sample coating at each moment; performing inversion at each moment to obtain a thickness measurement value of the coating of the to-be-measured sample; collecting reflection spectrum data of the exposed substrate in real time; acquiring a spectral characteristic value and a change degree at each moment; acquiring a predicted thickness measurement error at the next moment of each moment, acquiring a base compensation factor at each moment, and evaluating whether a thickness measurement value at each moment needs to be inversely calculated again or not; if so, constructing a target function at each moment, and optimizing parameters of a Fresnel model of an inversion thickness measurement value at each moment; and carrying out inversion calculation on the thickness measurement value of the coating of the sample to be measured at each moment. The invention aims to improve the stability and precision of the thickness measurement of the anti-reflection coating.

Sleep-aiding eyewear that prevents light which inhibits melatonin production from reaching the eye is described. The eyewear that is the object of the present disclosure has improved visibility over other methods of cutting off melatonin-inhibiting wavelengths of light, which enables the user to perform tasks, such as reading and typing, uninhibited. This is achieved in some embodiments using a Bragg grating comprising multiple layers of alternating reflective index material as a surface coating on the lens. This may be combined with lens-tinting, or antireflective coatings, in the eyewear. Furthermore, transition lenses which block melatonin-shifting light when there is a suitable external stimulus, such as blue light from a light emitting diode, are described. The presently described filters are also useful for electronic displays and functional light-transmitting materials.

A flip-chip bonded photonic device and methods of fabrication are described. The device has a spot size converter and an antireflective coating on a sidewall of the spot size converter. The device has a semiconductor layer comprising a stack of quantum wells and an etch stop semiconductor layer beneath the layer comprising a stack of quantum wells. The device has a vertical sidewall for optical coupling and a sloped sidewall for metal interconnects. The device has a substrate and an optical waveguide residing above substrate. A mirror is coupled to the optical waveguide that bends light from the optical waveguide and transmits the light through the substrate. The light expands as it passes through the substrate. A collimating lens receives the light transmitted through the substrate and is lithographically aligned with the mirror. An optical engine has a flip-chip integrated electro-absorption modulated laser (EML) on a substrate.

A coated article including a first antireflective (AR) coating supported by a glass substrate, wherein the first coating may include, moving away from the glass substrate: a dielectric first high index layer; a dielectric first low index layer; a dielectric second high index layer; a dielectric second low index layer comprising an oxide of silicon; a dielectric third high index layer comprising an oxide of niobium; a dielectric first medium index layer, wherein the third high index layer comprising the oxide of niobium is located between and directly contacting the second low index layer comprising the oxide of silicon and the first medium index layer; a dielectric third low index layer; and an overcoat layer; wherein the first coating contains no IR reflecting layer based on silver and / or gold; wherein, from the perspective of a viewer of the coated article, the first coating may be configured so that the coated article has a film side reflective ΔE* value of no greater than 3.0 upon heat treatment of at least about 580 degrees C. The ΔE* value(s) may be measured either with a substantially symmetrical / similar AR coating on the other side of the same glass substrate, or absent any AR coating on the other side of the glass substrate.

The invention discloses a front light guide plate process, which comprises the following steps of: adopting a modified PMMA (polymethyl methacrylate) plate as a base material, cleaning the surface of the modified PMMA plate, presetting a functional layer, performing an imprinting process on the surface of the light guide plate base material, and forming a bottom groove-bulge microstructure and a top prism array at one time through a composite die. Depositing an anti-reflection coating on the surface of the light guide plate semi-finished product with the composite microstructure, stacking TiO2 / SiO2 multilayer films layer by layer, and regulating and controlling the thickness of the coating to a target optical parameter in real time; an embedded heat dissipation layer is integrated on the back face of the coated light guide plate, a graphene heat conduction grid is generated through the laser induction technology, and optical performance and structural quality detection is conducted on the finished light guide plate; the light guide efficiency is remarkably improved through the composite microstructure design, the brightness and uniformity of the light guide plate are improved, the surface reflectivity and light loss are reduced through the multiple anti-reflection coatings, the problem of heat aggregation under high brightness is effectively solved through the laser-induced graphene heat dissipation layer, the product performance is improved, and the light guide plate with high brightness and high uniformity is output.

Higher modulation speed is achieved for a laser device comprising: an active layer structure between a semiconductor substrate and a grating structure configured for manipulation, comprising a common active layer for generation of laser light; a first facet spatially adjacent to one end of and a second facet spatially adjacent to an opposing end of the active layer structure, the first facet emitting laser light, the second facet being opposite the first, both comprising anti-reflection coating; the grating structure comprising spatially adjacent integral grating sections; a cladding structure for optically confining the laser light and adapted for arranging the grating structure between the active layer and the cladding structure; a DFB structure having a first grating section, at least one DBR structure having a second grating section, the first and second grating sections sharing the common active layer for at least the integral grating sections; the DFB structure comprising a first optical function as lasing function and the at least one DBR structure comprising a second one as optical feedback.

The invention relates to a windshield for a vehicle, having an exposed exterior-side surface (I) and an exposed interior-side surface (i), wherein the windshield has a transmission region (S) which is provided for the optical beam path of a transmitter and / or receiver (4) of electromagnetic radiation, and the interior-side surface (i) is provided with an anti-reflection coating (20) in the transmission region (S), the anti-reflection coating comprising, in the specified order starting from the interior-side surface (i): - a first optically high-refractive layer (21) having a refractive index of at least 1.9 and an optical thickness of 95 nm to 225 nm; - a first optically low-refractive layer (22) having a refractive index of maximally 1.6 and an optical thickness of 40 nm to 135 nm; - a second optically high-refractive layer (23) having a refractive index of at least 1.9 and an optical thickness of 415 nm to 615 nm; and - a second optically low-refractive layer (24) having a refractive index of maximally 1.6 and an optical thickness of 290 nm to 410 nm, the optical thickness being determined as the product of the geometrical thickness and the refractive index at 550 nm.

This invention discloses a patterned solar glass with a neutral colour anti- reflection coating (ARC) designed to enhance light transmission and optical performance The dual-side structured glass features a smoother side coated with a two-layer anti-reflection coating. The bottom layer is formulated from a silane precursor, a hydrolyzing agent, an acid catalyst, porosity-enhancing agents, and a combination of solvents, achieving a refractive index of 1.4 to 1.5. The top layer is a nano-composite-based AR coating with a refractive index of 1.25 to 1.35 is applied on the bottom layer. The layers are chemically bonded via a roll-coating process, with precise thickness control wherein, the bottom layer ranges from 180–210 nm and the top layer ranges from 140–160 nm. This gradient refractive index structure results in a transmission gain of 2.3% and minimizing Fresnel reflection losses. The coating ensures neutral colour appearance and uniform light transmission, improving omnidirectional performance under varying light angles.

The present application provides a composition for forming an anti-reflective coating layer and an application thereof. The composition comprises a first polymer containing epoxy groups, a second polymer containing groups reacting with the epoxy groups and a functional molecule, wherein the functional molecule comprises at least two epoxy groups. The composition for forming the anti-reflection coating is a composition material which is strong in acid and alkali cleaning resistance and has wet etching resistance, the size of a pattern can be protected in the cleaning process, and therefore the stability of a semiconductor device is guaranteed; according to the composition, the etching rate can be adjusted by adjusting the structure of the functional molecules, more accurate control can be achieved in the manufacturing process, and it is ensured that the thickness and uniformity of a coating meet the design requirements.

The invention belongs to the technical field of anti-reflection coatings, and particularly relates to an anti-reflection coating for photoresist and a preparation method of the anti-reflection coating. The coating comprises perfluoropolyether-polyhedral oligomeric silsesquioxane, the structural formula of the coating is # imgabs0 #, R is CH2CH (CH3) 2, and n is equal to (3-6). The preparation method of the coating comprises the following steps: dissolving perfluoropolyether-polyhedral oligomeric silsesquioxane in a solvent to prepare a solution, stirring at room temperature for 24 hours, filtering, coating, removing the solvent, crosslinking and curing to form the coating. By introducing an inorganic-organic hybrid skeleton and a rigid cage structure in a POSS structure and a fluorocarbon chain of perfluoropolyether, the thermal stability, hydrophobicity and etching resistance of the coating are improved.

The invention provides resin for an anti-reflection coating with a high extinction coefficient and a preparation method of the resin, the resin is prepared by free radical polymerization of styrene, glycidyl acrylate and isopropyl methacrylate, and fused ring structures such as anthracene, fluorene and pyrene are introduced into the resin structure. The PDI of the prepared resin can be within 2.5, the molecular weight distribution is narrowed, the small molecule proportion is reduced, the sensitivity of the resin in exposure and developing solvents is further improved, and the performance requirement of a bottom anti-reflection coating in the semiconductor manufacturing process can be met.

SOLUTION: In a wireless optical power transmission system comprising a transmitter and a receiver, the transmitter comprises: a laser emitting a beam; a scanning mirror for steering the beam toward the receiver; and a control unit receiving signals from a detection unit on the receiver and controlling the beam power and the scanning mirror. The receiver has a photovoltaic cell 71 having a bandgap energy of 0.75-1.2 eV, and the photovoltaic cell is provided with a plurality of conductors 72 on a receiving surface of beams 79a - 79g. A cover layer 78 of a material blocking illumination of wavelengths outside that of the laser, is disposed on the photovoltaic cell. The cover layer has anti-reflective coatings on its top and bottom surfaces.EFFECT: The detection unit generates a signal representing the power of the laser beam impinging upon the receiver, independent of illuminations other than that of the laser beam. The control unit thus can maintain the laser power impinging on the receiver.SELECTED DRAWING: Figure 7A

The invention relates to a material comprising a substrate (30) coated on one face (29) with a stack of thin layers (14) comprising at least one metallic functional layer (140) and an antireflective coating (160) located above said functional layer (140) opposite said substrate (30) ends with: - a metallic layer (168), with a physical thickness of said metallic layer (168) which is between 1.0 and 8.0 nm, or even between 1.5 and 5.0 nm, or even between 1.8 and 2.5 nm; then - a dielectric overlayer (169) which is located on and in contact with said absorbing metallic layer (168). Abstract figure: Figure 1

The embodiment of the invention provides a semiconductor structure and a forming method thereof, and the forming method comprises the steps: providing a substrate, and forming a to-be-processed layer and a laminated structure located on the to-be-processed layer on the substrate; forming a sacrificial layer on the laminated structure; forming an anti-reflection coating, wherein the anti-reflection coating exposes part of the surface of the sacrificial layer; sequentially etching the sacrificial layer and the laminated structure by taking the anti-reflection coating as a mask to expose part of the surface of the to-be-processed layer; etching the to-be-processed layer by taking the sacrificial layer as a mask to form a target pattern layer; and removing the sacrificial layer. By adopting the technical scheme, the electrical performance of the semiconductor structure can be improved.

According to a first aspect, the present disclosure relates to a distributed feedback (DFB) laser configured to control a wavelength of emitted light from the DFB laser, the DFB laser comprising a planar substrate, a substantially planar front facet with an anti-reflective coating, the front facet substantially perpendicular to the planar substrate, a substantially planar rear facet with a high reflectivity coating, the rear facet substantially perpendicular to the planar substrate, a laser section positioned between the rear facet and the front facet, the laser section comprising: a first ensemble of substantially planar layers configured to produce, with said planar substrate, a first PIN junction, the first ensemble of substantially planar layers comprising: a first top layer substantially parallel to the planar substrate; an active layer substantially parallel to the planar substrate and configured to emit light through the front facet, the active layer arranged between the planar substrate and the first top layer; a grating layer arranged substantially parallel to the active layer, the grating layer arranged between the planar substrate and the first top layer in proximity to the active layer; a Bragg grating arranged in said grating layer and configured to reflect light towards said front facet; and a phase section positioned between the rear facet and the laser section, the phase section comprising: a second ensemble of substantially planar layers comprising: a second top layer substantially parallel to the planar substrate, the second top layer substantially coplanar with the first top layer; an optical layer arranged between the planar substrate and the second top layer, the optical layer substantially coplanar with the active layer and optically coupled with the active layer; a non-grating layer substantially coplanar with the grating layer; and an element in electrical or thermal contact with the optical layer, the element configured, under application of a current or voltage, to change a refractive index of the optical layer so as to change the wavelength of the emitted light.

When an anti-reflective coating, conventionally applied to glass lenses, is applied to a plastic lens, the difference in thermal expansion between the plastic substrate and the anti-reflective coating causes significant expansion of the plastic substrate in high-temperature environments. This leads to a problem where the anti-reflective coating cannot keep up with the expansion of the substrate and is prone to fracture (cracking). Therefore, we aim to realize a new optical thin film that achieves both the desired optical properties and the suppression of crack formation. [Solution] The optical thin film of this disclosure includes one or more MO mixed layers (11) in which organometallic compounds are mixed within a layer formed by the physical deposition of magnesium fluoride.

The application belongs to InGaAs infrared focal plane detector, and provides a preparation method of a new type of InGaAs short-wave infrared detector. After growing P electrode, N electrode, P type metal and N type metal to form ohmic contact, growing connecting layer metal, thinning and polishing InP substrate to form a flat mirror surface, corresponding photoetching on a readout circuit wafer, growing lower electrode metal and indium column, and then carrying out metal stripping; InP epitaxial wafer PDA and readout circuit are uniformly glued, protected, and diced to form independent single; PDA and readout circuit are inversely interconnected to form an infrared detector, and secondary polishing treatment and growth of anti-reflection coating are carried out. The indium column is grown at the end of the readout circuit, and one-step photoetching can be completed. The PDA chip end can reduce the growth of the lower electrode, the growth of the indium column, and the growth of the corresponding passivation layer and the opening of the passivation layer. The process steps are reduced, the probability of defects is reduced, the production cost is reduced, and the final yield of the product is further improved.

A thermal processing apparatus is provided. The thermal processing apparatus includes a processing chamber having a chamber wall. The processing chamber includes a workpiece support. The workpiece support is configured to support a workpiece. The thermal processing apparatus includes one or more lamp heat sources configured to emit electromagnetic radiation to heat the workpiece. The thermal processing apparatus includes an anti-reflection coating in a region between the one or more lamp heat sources and the chamber wall of the processing chamber.

Disclosed is a method of fabricating a contact in a semiconductor device. The method includes: receiving a semiconductor structure having an opening into which the contact is to be formed; forming a metal layer in the opening; forming a bottom anti-reflective coating (BARC) layer in the opening; performing implanting operations with a dopant on the BARC layer and the metal layer, the performing implanting operations including controlling an implant energy level and controlling an implant dosage level to form a crust layer with a desired minimum depth on top of the BARC layer; removing unwanted metal layer sections using wet etching operations, wherein the crust layer and BARC layer protect remaining metal layer sections under the BARC layer from metal loss during the wet etching operations; removing the crust layer and the BARC layer; and forming the contact in the opening over the remaining metal layer sections.

A lens includes a lens portion, an anti-reflection (AR) coating layer disposed on a surface of the lens portion, and a water-repellent layer disposed on a surface of the AR coating layer. The water-repellent layer includes an inorganic layer having a plurality of pores and an organic layer at least partially disposed in the plurality of pores. The inorganic layer includes silicon oxynitride (SiOxNy).

The present invention provides a method for etching windows in a shallow trench isolation and via etching process. The method for etching windows in the shallow trench isolation etching process includes: providing a substrate, sequentially forming a silicon oxide layer, a silicon nitride layer, a first bottom anti-reflection coating, and a photoresist layer on the substrate; performing a first lithography through an etching process to form a first window; performing a second lithography to form a second window; removing the photoresist layer and the first bottom anti-reflection coating to form a third window; forming a second bottom anti-reflection coating in the third window; performing a third lithography on the second bottom anti-reflection coating in the third window, using the polymer generated by etching the second bottom anti-reflection coating in the third window as a sidewall protection layer, and using the sidewall protection layer as a barrier layer to form a fourth window with a certain inclination angle on the silicon nitride layer, the silicon oxide layer, and the substrate. The fourth window is the shallow trench of the shallow trench isolation. The present invention forms shallow trenches and vias with a better morphology.

The invention relates to two-component coating materials for producing anti-reflective coatings, wherein the binder component contains one or more polymer polyols, black plastic spheres having D50 sphere diameters in the range of 9 to 17 μm, and black pigments, and wherein the hardener component has one or more isocyanates. The invention also relates to methods for producing said anti-reflective coatings and to the use thereof on components and devices having functions that are impaired by the reflection of electromagnetic radiation, in particular by the reflection of light.

The present disclosure addresses the problem of providing a method for producing a spectacle lens, wherein the method makes it possible to produce a spectacle lens having a topcoat layer that can suppress the occurrence of cracks and the like and that has excellent water repellent properties or hydrophilic properties. A method for producing a spectacle lens according to the present disclosure comprises: a step for bringing into contact a laminate including a spectacle lens base material and an antireflective film having an SiO2 layer on the outermost surface thereof with an alkaline solution having a pH of more than 7.0 but less than 9.8; and a step for obtaining a spectacle lens by forming a topcoat layer on the antireflective film.

A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating. wherein the composite etch stop mask layer includes a silicon nitride layer and a stressed layer. A percentage of Si—H bonds in the silicon nitride layer is greater than a percentage of Si—H bonds in the stressed layer.

The invention provides a preparation method of a conductive interconnection structure, and the method comprises the steps: carrying out the wet cleaning technology of a semiconductor structure after the first openings are formed after a second hard mask layer and a first hard mask layer are etched, and taking deionized water as a wet cleaning solution, the film quality of the anti-reflection coating at the bottom of the first opening can be prevented from being changed, the filling performance of the spin-coating carbon coating for filling the first opening is improved, and the spin-coating carbon coating is prevented from generating a cavity defect; therefore, the situation that the outline of the first hard mask layer on the side wall of the first opening is abnormal due to the fact that chemical liquid used in the wet cleaning process of the semiconductor structure after the second opening is formed enters the spin-coating carbon coating is avoided; therefore, the morphology and the transverse size of a through hole formed by subsequent integrated etching are not affected by the contour of the first hard mask layer and the void defect of the spin-coated carbon coating, thereby solving the problem of open circuit of a rear-section metal interconnection line, and improving the yield of a device.

The invention relates to an exterior trim part (1) of a vehicle, comprising a thin-walled cover element (2) for covering and protecting a device (3) for emitting and / or receiving electromagnetic waves against environmental influences, wherein the cover element (2) has an intended visible side (A) and an inner side (B) opposite the visible side (A) and is configured such that it can be penetrated by electromagnetic waves of at least one electromagnetic wavelength in the range of 100 nm to 1600 nm, wherein the cover element (2) furthermore has at least one carrier layer (4) made of a polymer material which is transparent or partially transparent to the electromagnetic waves, and having at least one layer (5) of an anti-reflection coating and / or anti-reflection structuring, which is designed in such a way that it reduces the reflection of the provided electromagnetic waves off the cover element (2), wherein the layer (5) is arranged at least on the region (X) of the carrier layer (4) through which the electromagnetic waves are to pass, wherein the wall thickness of the cover element (2) is in a range of 1 mm to 8 mm, preferably in the range of 1.5 mm to 5 mm.

A display article is described herein that includes: a substrate comprising a thickness and a primary surface; a textured surface region; and an antireflective coating disposed on the textured surface region. The textured surface region comprises structural features and an average texture height (Rtext) from 50 nm to 300 nm. The substrate exhibits a sparkle of less than 5%, as measured by PPD140, and a transmittance haze of less than 40%, at a 0° incident angle. The antireflective coating comprises alternating high refractive index and low refractive index layers. Each of the low index layers comprises a refractive index of less than or equal to 1.8, and each of the high index layers comprises a refractive index of greater than 1.8. The article also exhibits a first-surface average photopic specular reflectance (% R) of less than 0.3% at any incident angle from about 5° to 20° from normal at visible wavelengths.

An optical article comprising a coating system that imparts anti-reflective properties and hydrophobic properties to the optical article. The coating system includes a hard coating layer on a lens substrate, and alternating layers of a low refractive index metal oxide and a high refractive index metal oxide deposited on the hard coating layer as an anti-reflective coating, or alternating layers of a medium refractive index metal oxide and a high refractive index metal oxide deposited on the hard coating layer as an anti-reflective coating. A fluorine-free hydrophobic coating composition is deposited on the anti-reflective coating to reduce the surface free energy of the anti-reflective surface of the optical article and to improve the overall cleaning performance of the lens surface by rendering the lens surface hydrophobic.

A beam combining device, enabled to combine a first beam with a second beam of a different spectrum into a combined beam, where the combination may be obtained through a device comprising two antireflective coating, a dichroic filter coating, and a reflective coating arranged on a substrate.

An anti-reflective waveguide assembly comprising a waveguide substrate having a first index of refraction, a plurality of diffractive optical elements disposed upon a first surface of the waveguide and an anti-reflective coating disposed upon a second surface of the waveguide. The anti-reflective coating preferably increases absorption of light through a surface to which it is applied into the waveguide so that at least 97 percent of the light is transmitted. The anti-reflective coating is composed of four layers of material having different indices of refraction that the first index of refraction and an imaginary refractive index less than 1×10−3 but preferably less than 5×10−4.