172 results about "Silicon membrane" patented technology

A processing apparatus includes a first chamber having a gas first inlet and a first gas outlet, a plasma generator that generates a plasma in the first chamber, and a second chamber having a second gas inlet and a second gas outlet. A control unit controls the first inlet to provide a carbon containing gas to the first chamber and control the plasma generator to apply a first plasma to a silicon-containing film of a substrate to a first depth. The control unit controls the second gas inlet to apply another gas inside the second chamber and deposit a second part of the protection film over the first part of the protection film. The control unit controls a supply of a fluorocarbon gas through the first gas inlet and control the plasma generator to generate a second plasma to etch the silicon-containing film to a second depth.

A film stack is formed a workpiece. The film stack is fabricated by sequentially depositing a carbon-doped silicon germanium stack and a silicon film to form a carbon-doped silicon-germanium and silicon mini-stack disposed on a substrate during a deposition cycle. The deposition cycle comprises exposing a workpiece including the substrate to a first gas including a first precursor to deposit a first silicon-germanium layer and exposing the workpiece to a second gas including the first precursor to deposit a carbon-silicon-germanium layer on the first silicon-germanium layer. Further, the deposition cycle includes exposing the workpiece to a third gas including the first precursor to deposit a second silicon-germanium layer on the carbon-silicon-germanium layer. The deposition cycle further includes exposing the workpiece to a fourth gas including a second precursor to deposit the silicon film on the second silicon-germanium layer. The second precursor differs from the first precursor.

The etching method disclosed herein includes a process (a) of preparing a substrate within a chamber of a plasma processing apparatus. The substrate includes a silicon-containing film. The etching method also includes a process (b) of etching the silicon-containing film by chemical species from a plasma formed from a process gas within the chamber. The process gas includes a phosphorous-containing gas, a fluorine-containing gas, and a hydrogen-containing gas. The hydrogen-containing gas contains at least one selected from the group consisting of hydrogen fluoride, H2, ammonia, and a hydrocarbon.

Provided are methods for increasing the deposition rate and improving the film properties of silicon-containing films via plasma-enhanced atomic layer deposition (PEALD) by utilization of hydrogen peroxide. In particular, an exposure to hydrogen peroxide before, during, or after the plasma exposure step of a low temperature PEALD process utilizing silicon-containing compounds results in increased deposition rates and superior film characteristics as compared to PEALD processes using plasma alone. Additionally, the disclosed process may utilize non-oxidizing plasmas, increasing the range of substrates to which the process can be applied relative to those compatible with oxidizing plasmas.

The present invention provides a chemical mechanical polishing composition comprising: (a) a titanium oxide abrasive; (b) an oxidizing agent; and (c) water, wherein the chemical mechanical polishing composition has a pH of about 7 or less. The invention also provides a method for chemical mechanical polishing of a substrate, in particular a substrate comprising a boron-doped polycrystalline silicon layer on a surface of the substrate, using the composition.

The application belongs to the technical field of metallurgy, and particularly relates to a device and method for preparing high-purity silicon film based on vacuum degree control electrolytic silicon purification. The device creates a closed environment through a vacuum cabin, and utilizes a connected vacuumizing mechanism and a vacuum degree adjusting device to accurately control the vacuum degree in the cabin. A material storage mechanism is used for storing silicon materials, and is composed of a corundum crucible and a graphite crucible sleeved outside the corundum crucible. A heating mechanism heats the materials through electromagnetic induction. The method first heats impurity-containing electrolytic silicon in a vacuum environment in a deimpurification mode, so that impurities with higher saturated vapor pressure are preferentially volatilized and deposited on the inner wall of the cabin, thereby realizing preliminary purification. Then, in an evaporation mode, the purified silicon material is heated to a volatilization temperature again, so that it is vapor-deposited on the upper base material to directly form a high-purity silicon film. The scheme integrates the purification and film forming processes, and simplifies the process.

The present application relates to the technical field of solar cells, in particular to a preparation of a laminated conductive film and its application in a crystalline silicon heterojunction solar cell, a transparent conductive film and a silicon film are prepared in sequence by magnetron sputtering technology to form a laminated conductive film, the preparation process is simple and efficient, and the conductive performance is significantly improved in the air environment and the heat treatment process. The laminated conductive film has good heat resistance in the air atmosphere, and after heat treatment at 100 DEG C-400 DEG C, the conductive performance is not only not attenuated but also improved, and the laminated film structure improves the stability of the transparent conductive film in acidic substances. The laminated conductive film is applied in a crystalline silicon heterojunction solar cell, the preparation process is simple, the production line has good compatibility, the service life of the heterojunction solar cell can be effectively prolonged, the reliability of the solar cell in long-term work is improved, the low packaging cost is maintained, and the application is suitable for large-scale production of high-efficiency and long-life heterojunction solar cells.

We provide technology to improve the etching shape. [Solution] The disclosed etching method includes (a) providing a substrate having a base film, a silicon-containing film on the base film, and a mask on the silicon-containing film into a chamber; (b) etching the silicon-containing film to form recesses using a first plasma generated from a first processing gas containing hydrogen fluoride gas and tungsten-containing gas; and (c) after step (b), further etching the silicon-containing film using a second plasma generated from a second processing gas containing hydrogen fluoride gas, wherein the second processing gas does not contain tungsten-containing gas, or contains tungsten-containing gas at a flow rate less than that of the tungsten-containing gas in the first processing gas.

An etching method for forming an aperture in a substrate comprises exposing the substrate to an etching gas containing a non-cyclic C6F12; converting the etching gas to a plasma; allowing an etching reaction to proceed between the plasma and one or more silicon-containing films containing in the substrate so that the one or more silicon-containing films are selectively etched versus a patterned mask layer deposited on top of the one or more silicon-containing films to form the aperture therein and volatile by-products; and removing the volatile by-products. CO2eq emissions of the volatile by-products are reduced compared to an etching process using etching gases with GWP100>30.

A film structure comprises a substrate and a buffer film formed on the substrate. The substrate is a 36° to 48° rotated Y-cut Si substrate, or the substrate is a SOI substrate comprising a base substance made of the 36° to 48° rotated Y-cut Si substrate, an insulating layer on the base substance, and a SOI layer made of a Si film on the insulating layer, and a Miller index of a crystal plane of an upper surface of the SOI layer is equal to the Miller index of a crystal plane of an upper surface of the base substance. The buffer film comprises ZrO2 epitaxially grown on the substrate.

An etching method includes: a) preparing, within a chamber, a substrate including a mask film containing ruthenium and having a predetermined pattern formed in the mask film, and a silicon-containing film provided under the mask film; b) supplying a process gas including a hydrocarbon-containing gas and a fluorine-containing gas into the chamber; and c) etching the silicon-containing film through the mask film using plasma generated from the process gas supplied into the chamber.

This invention relates to precursors and methods for (a) forming silicon-containing films and (b) functionalizing a substrate surface to form a germanium seed layer suitable for depositing Ge films. In one aspect, precursors of Formula I and / or Formula II as described herein are provided.

The application provides a receiving end filter and a preparation method thereof, and a combined filter, and belongs to the field of coating technology. The application solves the problem that the existing receiving end filter is relatively single. The receiving end filter comprises a glass substrate, a narrow-band pass film system and an anti-reflection film system. The narrow-band pass film system comprises silicon oxide film layers and hydrogenated silicon / hydroxylated silicon / nitrogen hydrogenated silicon film layers which are alternately deposited layer by layer, and a silicon oxide film layer as an outermost layer. The anti-reflection film system comprises silicon oxide film layers and hydrogenated silicon / hydroxylated silicon / nitrogen hydrogenated silicon film layers which are alternately deposited layer by layer, and a silicon oxide film layer as an outermost layer. The receiving end filter has the advantages that the overlapping high transmittance is achieved within an angle range of 0°-60° of an incident angle, and the demand cut-off spectrum band has the effect of inhibiting the transmission of light signals within the angle range of 0°-60° of the incident angle.

Atomic layer deposition (ALD) process formation of silicon-containing film at temperature of about 700°C or lower is disclosed, wherein at least one organoamino- alkoxy-carbosilane precursor compound having two Si-C-Si linkages and selected from the group consisting of Formula IA, IB, IC, and ID: wherein R is selected from a linear or branched Ci to C10 alkyl group; R1 and R2 are each independently selected from hydrogen, a linear or branched Ci to C10 alkyl group, a linear or branched C2 to C10 alkenyl, and a C6 to C10 aryl group with a proviso that R1 and R2 cannot both be hydrogen, and with the proviso that for IC and ID, every R and every R1 and R2 cannot all be methyl; R1 and R2 are either linked to form a cyclic ring structure or R1 and R2 are not linked to form a cyclic ring structure.

The plasma processing apparatus includes: a chamber; a substrate support unit which is disposed in the chamber and supports a substrate including a silicon-containing film; a gas supply unit capable of supplying a processing gas containing a hydrogen fluoride gas into the chamber; and a plasma generation unit capable of generating plasma from the process gas, in which at least one of the chamber and an internal member disposed in the chamber contains phosphorus.

The invention discloses a processing method of a semiconductor silicon substrate. The processing method comprises the following steps: forming a first layer of silicon film on the surface of the semiconductor silicon substrate; forming a second layer of silicon film on the surface of the first layer of silicon film; carrying out solid-phase crystallization on the second silicon film through chemical reaction or annealing treatment, and forming crystal grains; and forming a transverse pore structure in the second layer of silicon film. By adopting the technical scheme of the invention, the stress can be effectively released in the processing process of the semiconductor silicon substrate, so that the performance and the reliability of a chip are improved.

The present application relates to titanium dioxide coating technical field, especially to a kind of titanium dioxide continuous flow general coating method and device, four reaction units are installed and connected from left to right in series, and the control of the installation and connection position of first metering pump, second metering pump, third metering pump, fourth metering pump, fifth metering pump, sixth metering pump is combined, so that the accurate control of material feeding position and feeding amount, in turn, titanium dioxide silicon film layer and aluminum film layer process are effectively controlled, and the control of the quality of silicon film layer, aluminum film layer coating in continuous flow process can be realized, the control of temperature and other process parameters in continuous flow reaction system is combined, silicon coating rate is promoted to reach 94% or more under 90-95 ℃, compared with gap method silicon coating rate 80.37%, about 14 percentage points are improved;Aluminum coating rate reaches 97% or more, compared with gap method aluminum coating rate 91.26%, about 6 percentage points are improved, improve titanium dioxide coating effect.

The present application provides a technique for improving a selection ratio at the time of etching a laminated film in which silicon oxide films and silicon films are alternately laminated. The present application provides an etching method for a laminated film in which silicon oxide films and silicon films are alternately laminated on a substrate, which is an etching method for forming a desired etching shape by plasma, including the steps of: a step of preparing the substrate; a step of cooling the surface temperature of the substrate to -40°C or lower; a step of generating plasma of a gas containing hydrogen and fluorine by high-frequency power for plasma generation; and a step of etching the laminated film by the generated plasma.

A method for producing a semiconductor wafer, the method including steps of: (1) forming a carbon-doped silicon film on a silicon substrate at a first temperature; (2) forming a carbon-undoped silicon film on the carbon-doped silicon film at the first temperature to obtain a stacked wafer; and (3) annealing the stacked wafer at a second temperature higher than the first temperature or further forming a film on the stacked wafer at the second temperature to obtain a semiconductor wafer. This provides a method for producing a semiconductor wafer having a carbon-containing silicon layer without precipitation of SiC on the wafer surface and with inhibited other defects.

The invention provides an oxidation tail gas treatment method and system. The oxidized tail gas treatment method comprises the steps that oxidized tail gas is subjected to membrane separation, and an organic composite silicon membrane is adopted for membrane separation; the organic composite silicon film comprises a base film and an organic silicon film, and the organic silicon film comprises an organic silicon polymer and a hydrophobic additive. The method has the advantages of being simple in technological process, low in investment, environmentally friendly, low in carbon emission, stable in operation and good in economic benefit.

The application discloses a ZIF-8-NH2 doped bridge organic silicon reverse osmosis membrane and a preparation method thereof. The membrane is prepared by doping ZIF-8-NH2 metal organic framework material into polymeric organic silicon sol, and forming a ZIF-8-NH2 / organic silicon hybrid membrane on the surface of a prefabricated ceramic support by a rubbing coating method. The ZIF-8-NH2 / bridge organic silicon membrane prepared by the application has high water permeability and high salt retention rate (NaCl retention rate is greater than 99.2%) in reverse osmosis desalination application, and the membrane structure is stable in the process of treating high-salt wastewater with TDS greater than 7 wt%.

A method for depositing a film includes electron enhanced chemical vapor deposition with at least one hydride precursor, at least one reactive background gas, and electrons to deposit a film on a substrate having a positive substrate voltage. In an embodiment, the method is a method for depositing a silicon film including electron enhanced chemical vapor deposition with at least one Si precursor, at least one reactive background gas, and electrons to deposit a silicon film on a substrate having a positive substrate voltage. In this embodiment, the at least one Si precursor may include Si2H6, and the at least one reactive background gas may include H2.

The application provides a differential capacitive differential pressure sensor and a manufacturing method thereof, relates to the technical field of micro electro mechanical systems (MEMS), and comprises a substrate and differential pressure sensitive capacitors; the differential pressure sensitive capacitor comprises a differential pressure sensitive film, a lower electrode plate, a through hole and a support body; the differential pressure sensitive capacitor comprises a differential pressure sensitive film, an upper electrode plate, a through hole and a support body. The differential pressure sensitive capacitor and the differential pressure sensitive capacitor form a differential capacitor structure. The manufacturing method of the application is to manufacture a differential capacitive differential pressure sensor by using two SOI substrates and MEMS processes; the two differential pressure sensitive films are manufactured by etching the silicon films of the SOI substrates, and the thicknesses and shapes of the two differential pressure sensitive films are the same, so that the consistency of the two differential pressure sensitive films is ensured, and the accuracy of the capacitor spacing is ensured by using an oxidation process.

A tunable infrared optical filter device, includes a first mirror and a second mirror bonded to each other to form a cavity therebetween. A surface of a position where the first mirror and the second mirror are bonded to each other is provided with an electrode for driving the first mirror or the second mirror to move, and each of the first mirror and the second mirror is a distributed Bragg reflector formed by bonding silicon films. The silicon film may be formed by machining the silicon film wafer, to form the distributed Bragg reflector composed of the two silicon films and the chambers therebetween. The distributed Bragg reflector may also be formed by bonding the silicon film and the silicon film of an SOI wafer.

The invention discloses a crystalline silicon solar cell and a preparation method thereof. The crystalline silicon solar cell may include: a crystalline silicon substrate; the first intrinsic silicon-containing film layer is arranged on the main surface of the crystalline silicon substrate; the first doped silicon-containing film layer is arranged on the outer side of the first intrinsic silicon-containing film layer and comprises first doped atoms, the conduction type of the first doped atoms is opposite to that of second doped atoms contained in the crystalline silicon substrate, and the first doped silicon-containing film layer does not completely cover the first intrinsic silicon-containing film layer; the first transparent conductive film layer is arranged on the outer side of the first intrinsic silicon-containing film layer which is not covered by the first doped silicon-containing film layer and is in direct contact with the first intrinsic silicon-containing film layer; the second transparent conductive film layer is arranged on the outer side of the first doped silicon-containing film layer and is in direct contact with the first doped silicon-containing film layer; the first doped silicon-containing film layer and the second transparent conductive film layer are electrically isolated from the first transparent conductive film layer. The battery is simple in structure, the process complexity can be reduced, and structural damage caused by the preparation process is reduced.

A substrate processing method of cleaning a substrate having a patterned Si film while removing an oxide on the Si film includes removing the oxide by supplying a cleaning liquid containing hydrofluoric acid and water to the substrate while rotating the substrate; and mixing an organic solvent, which has miscibility with the water and has a lower surface tension than the water, into the cleaning liquid. The mixing of the organic solvent is performed during the removing of the oxide and after a predetermined time has elapsed from a start of the removing of the oxide.

A composition is used in a process for depositing a silicon oxide film or a carbon doped silicon oxide film using a deposition process, wherein the composition includes at least one silicon precursor having a structure represented by Formula I as described herein

Methods for low temperature selective deposition of epitaxial silicon-containing films and semiconductor devices incorporating the epitaxial silicon-containing films are provided. The method includes etchant-free selective epitaxy of N-type doped silicon including either a soak in a phosphorous source gas or an antimony seed layer. In one or more implementations, an underlying silicon surface is exposed to a pre-soak process performed by exposing the silicon surface to a phosphorous-containing gas, for example, phosphine gas, for a period of time followed by growing the N-doped epitaxial silicon film by co-flowing silicon sources and antimony sources only. The pre-soak / deposition process can be applied repeatedly to achieve desirable stack thickness. In one or more implementations, a seed layer of antimony-doped silicon is formed by co-flowing silicon and antimony source gases followed by co-flowing silicon source gases, antimony source gases, and phosphorous source gases to grow the N-doped epitaxial silicon film.

The etching method of the present invention includes a step of preparing a substrate within a cavity of a plasma processing apparatus. The substrate includes a silicon-containing film. The etching method further includes a step of etching the silicon-containing film by means of chemical species from the plasma formed in the cavity by a process gas. The process gas includes halogen elements and phosphorus.