346 results about "Silicon membrane" patented technology

The present disclosure relates to a lithium-ion battery, comprising: a silicon anode comprising an essentially pure amorphous porous silicon film deposited onto a current collector, and comprising a plurality of columnar structures; an electrolyte layer comprising one or more solid components, and a cathode layer.

Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below:In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

To provide a technique that can generate a large stress on a second surface of a substrate opposite to a first surface on which a device is formed.SOLUTION: A substrate processing method includes the steps of preparing a substrate having a first surface on which a device is formed, and depositing a silicon-containing film on a second surface opposite the first surface of the substrate using a high-order silane gas as a deposition gas at a temperature at which the high-order silane gas is liquefied.SELECTED DRAWING: Figure 1

A method and composition for depositing a silicon oxide film in an atomic layer deposition process at one or more temperatures of 600° C. or greater are provided. In one aspect, there is provided a method to deposit a silicon oxide film or material on a substrate in a reactor at one or more temperatures ranging from about 600° C. to 1000° C.; comprising the steps of: introducing into the reactor at least one halidocarbosilane precursor selected from the group of compounds having Formulae I and II described herein; purging the reactor with a purge gas; introducing an oxygen-containing source into the reactor; and purging the reactor with a purge gas; and wherein the steps are repeated until a desired thickness of silicon oxide is deposited.

A processing apparatus includes a first chamber having a gas first inlet and a first gas outlet, a plasma generator that generates a plasma in the first chamber, and a second chamber having a second gas inlet and a second gas outlet. A control unit controls the first inlet to provide a carbon containing gas to the first chamber and control the plasma generator to apply a first plasma to a silicon-containing film of a substrate to a first depth. The control unit controls the second gas inlet to apply another gas inside the second chamber and deposit a second part of the protection film over the first part of the protection film. The control unit controls a supply of a fluorocarbon gas through the first gas inlet and control the plasma generator to generate a second plasma to etch the silicon-containing film to a second depth.

A substrate-treatment method includes (a) providing a substrate at a stage, the substrate including a silicon nitride-containing film, in which a recess defined by a top, a side wall, and a bottom is formed, and a silicon film exposed from the bottom of the recess; (b) forming a silicon oxide film along the recess; (c) exposing the silicon oxide film to a plasma of a process gas containing a hydrogen gas, thereby modifying the silicon oxide film at the top and bottom of the recess selectively relative to the side wall by an anisotropic plasma treatment; and (d) selectively removing the modified silicon oxide film at the top and bottom of the recess through chemical etching without using a plasma, thereby retaining the silicon oxide film at the side wall of the recess.

Precursors for selective deposition of silicon-containing films are provided. A precursor comprises a compound of the formula: R(HO)Si(OR1)(OR2), where: R is or comprises an alkyl, an alkenyl, or an alkoxy; and R1 and R2 are independently a hydrogen, an alkoxyl, or R1 and R2 are bonded to form a heterocycle. Devices comprising siliconcontaining films are also provided, wherein the silicon-containing film comprises a reaction product of the precursor and another reactive species. Methods of depositing silicon-containing films are also provided, among other things.

The disclosed etching method comprises: (a) a step of providing a substrate having a base film, a silicon-containing film on the base film, and a mask on the silicon-containing film in a chamber; (b) a step of forming a recess by etching the silicon-containing film using a first plasma that is generated from a first processing gas that contains hydrogen fluoride gas and a tungsten-containing gas; and (c) a step of further etching the silicon-containing film using a second plasma that is generated from a second processing gas that contains hydrogen fluoride gas after the step (b), wherein the second processing gas does not contain a tungsten-containing gas or contains a tungsten-containing gas at a flow rate that is less than the flow rate of the tungsten-containing gas in the first processing gas.

The invention relates to a method of manufacturing a semiconductor device. An amorphous silicon film is formed on the semiconductor substrate in the first to fourth regions. The silicon film in the first region and the fourth region is removed such that the silicon film in the second region and the third region is left. The polycrystalline silicon film is formed by crystallizing the silicon film by heat treatment.

A film stack is formed a workpiece. The film stack is fabricated by sequentially depositing a carbon-doped silicon germanium stack and a silicon film to form a carbon-doped silicon-germanium and silicon mini-stack disposed on a substrate during a deposition cycle. The deposition cycle comprises exposing a workpiece including the substrate to a first gas including a first precursor to deposit a first silicon-germanium layer and exposing the workpiece to a second gas including the first precursor to deposit a carbon-silicon-germanium layer on the first silicon-germanium layer. Further, the deposition cycle includes exposing the workpiece to a third gas including the first precursor to deposit a second silicon-germanium layer on the carbon-silicon-germanium layer. The deposition cycle further includes exposing the workpiece to a fourth gas including a second precursor to deposit the silicon film on the second silicon-germanium layer. The second precursor differs from the first precursor.

An etching method includes: (a) preparing a substrate including a silicon-containing film including a silicon oxide film and placed on a substrate support provided in a chamber; (b) supplying a processing gas containing a tungsten hexafluoride gas, a gas containing carbon and fluorine, and an oxygen-containing gas into the chamber; and (c) generating plasma from the processing gas to etch the silicon-containing film. (c) includes periodically applying a negative DC voltage to the substrate support.

The etching method disclosed herein includes a process (a) of preparing a substrate within a chamber of a plasma processing apparatus. The substrate includes a silicon-containing film. The etching method also includes a process (b) of etching the silicon-containing film by chemical species from a plasma formed from a process gas within the chamber. The process gas includes a phosphorous-containing gas, a fluorine-containing gas, and a hydrogen-containing gas. The hydrogen-containing gas contains at least one selected from the group consisting of hydrogen fluoride, H2, ammonia, and a hydrocarbon.

A substrate-processing method includes: preparing a substrate including an undoped silicon film and a phosphorus-doped silicon film, at least the phosphorus-doped silicon film being exposed on a surface of the substrate; and supplying a halogen gas to the substrate, and, from among the undoped silicon film the phosphorus-doped silicon film, etching and removing the phosphorus-doped silicon film selectively.

Provided is a technique for suppressing the occurrence of shape abnormalities during etching of a silicon film. The etching method includes: a step (a) in which a substrate having a silicon film or a silicon-containing conductive film and a mask on the silicon film or the silicon-containing conductive film is provided on a substrate support portion disposed in a chamber; and (b) supplying a processing gas containing a bromine-containing gas, a phosphorus fluoride gas, and an oxygen-containing gas into the chamber, and generating plasma from the processing gas to etch the silicon film or the silicon-containing conductive film.

Provided are methods for increasing the deposition rate and improving the film properties of silicon-containing films via plasma-enhanced atomic layer deposition (PEALD) by utilization of hydrogen peroxide. In particular, an exposure to hydrogen peroxide before, during, or after the plasma exposure step of a low temperature PEALD process utilizing silicon-containing compounds results in increased deposition rates and superior film characteristics as compared to PEALD processes using plasma alone. Additionally, the disclosed process may utilize non-oxidizing plasmas, increasing the range of substrates to which the process can be applied relative to those compatible with oxidizing plasmas.

The present invention provides a chemical mechanical polishing composition comprising: (a) a titanium oxide abrasive; (b) an oxidizing agent; and (c) water, wherein the chemical mechanical polishing composition has a pH of about 7 or less. The invention also provides a method for chemical mechanical polishing of a substrate, in particular a substrate comprising a boron-doped polycrystalline silicon layer on a surface of the substrate, using the composition.

The application belongs to the technical field of metallurgy, and particularly relates to a device and method for preparing high-purity silicon film based on vacuum degree control electrolytic silicon purification. The device creates a closed environment through a vacuum cabin, and utilizes a connected vacuumizing mechanism and a vacuum degree adjusting device to accurately control the vacuum degree in the cabin. A material storage mechanism is used for storing silicon materials, and is composed of a corundum crucible and a graphite crucible sleeved outside the corundum crucible. A heating mechanism heats the materials through electromagnetic induction. The method first heats impurity-containing electrolytic silicon in a vacuum environment in a deimpurification mode, so that impurities with higher saturated vapor pressure are preferentially volatilized and deposited on the inner wall of the cabin, thereby realizing preliminary purification. Then, in an evaporation mode, the purified silicon material is heated to a volatilization temperature again, so that it is vapor-deposited on the upper base material to directly form a high-purity silicon film. The scheme integrates the purification and film forming processes, and simplifies the process.

An etching method according to the present disclosure comprises: (a) a step for preparing, on a substrate support part which is disposed in a chamber, a substrate containing a silicon-containing film and a mask film on the silicon-containing film, wherein the mask film includes at least one opening; (b) a step for supplying, into the chamber, processing gas containing CxFy gas (x is an integer of 2 or 3, and y is an integer of not more than two times x), the step being (b-1) a step for supplying, into the chamber, the CxFy gas at a first flow rate, (b-2) a step for supplying, into the chamber, the CxFy gas at a second flow rate, which is smaller than the first flow rate, (b-3) a step for supplying, into the chamber, the CxFy gas at a third flow rate, which is smaller than the second flow rate, (b-4) a step for supplying the CxFy gas at a fourth flow rate, which is between the second flow rate and the third flow rate; and (c) a step for using a source RF signal to generate plasma from the processing gas and etch the silicon-containing film in said at least one opening, while the step (b) is carried out.

The invention provides a film forming apparatus and a method of manufacturing a member having a silicon-containing film. A film is formed while suppressing oxidation. The exhaust section depressurizes the inside of the chamber to a predetermined degree of vacuum. The holding unit is disposed in the chamber and holds a film-forming target member. The supply unit supplies a film-forming material containing silicon to the surface of a film-forming target member. The heat source is capable of heating at a predetermined degree of vacuum to melt the supplied film-forming material.

There is provided a technique that includes: (a) forming a silicon seed layer on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a1) supplying a first gas containing halogen and silicon to the substrate; and (a2) supplying a second gas containing hydrogen to the substrate; and (b) forming a film containing silicon on the silicon seed layer by supplying a third gas containing silicon to the substrate, wherein a pressure of a space in which the substrate is located in (a2) is set higher than a pressure of the space in which the substrate is located in (a1).

This substrate processing method includes: preparing a substrate having a first surface on which a device is formed; and forming a silicon-containing film on a second surface on the reverse side of the substrate from the first surface by using a higher silane gas as a film-forming gas at a temperature at which the higher silane gas is liquefied.

A silicon film in an amorphous state is formed on a semiconductor substrate located in a first to a fourth region. The silicon film located in the first region and the fourth region is removed, leaving the silicon film located in the second region and the third region. A polycrystalline silicon film is formed by crystallizing the silicon film through a heat treatment.

The present application relates to the technical field of solar cells, in particular to a preparation of a laminated conductive film and its application in a crystalline silicon heterojunction solar cell, a transparent conductive film and a silicon film are prepared in sequence by magnetron sputtering technology to form a laminated conductive film, the preparation process is simple and efficient, and the conductive performance is significantly improved in the air environment and the heat treatment process. The laminated conductive film has good heat resistance in the air atmosphere, and after heat treatment at 100 DEG C-400 DEG C, the conductive performance is not only not attenuated but also improved, and the laminated film structure improves the stability of the transparent conductive film in acidic substances. The laminated conductive film is applied in a crystalline silicon heterojunction solar cell, the preparation process is simple, the production line has good compatibility, the service life of the heterojunction solar cell can be effectively prolonged, the reliability of the solar cell in long-term work is improved, the low packaging cost is maintained, and the application is suitable for large-scale production of high-efficiency and long-life heterojunction solar cells.

We provide technology to improve the etching shape. [Solution] The disclosed etching method includes (a) providing a substrate having a base film, a silicon-containing film on the base film, and a mask on the silicon-containing film into a chamber; (b) etching the silicon-containing film to form recesses using a first plasma generated from a first processing gas containing hydrogen fluoride gas and tungsten-containing gas; and (c) after step (b), further etching the silicon-containing film using a second plasma generated from a second processing gas containing hydrogen fluoride gas, wherein the second processing gas does not contain tungsten-containing gas, or contains tungsten-containing gas at a flow rate less than that of the tungsten-containing gas in the first processing gas.

An etching method for forming an aperture in a substrate comprises exposing the substrate to an etching gas containing a non-cyclic C6F12; converting the etching gas to a plasma; allowing an etching reaction to proceed between the plasma and one or more silicon-containing films containing in the substrate so that the one or more silicon-containing films are selectively etched versus a patterned mask layer deposited on top of the one or more silicon-containing films to form the aperture therein and volatile by-products; and removing the volatile by-products. CO2eq emissions of the volatile by-products are reduced compared to an etching process using etching gases with GWP100>30.

A film structure comprises a substrate and a buffer film formed on the substrate. The substrate is a 36° to 48° rotated Y-cut Si substrate, or the substrate is a SOI substrate comprising a base substance made of the 36° to 48° rotated Y-cut Si substrate, an insulating layer on the base substance, and a SOI layer made of a Si film on the insulating layer, and a Miller index of a crystal plane of an upper surface of the SOI layer is equal to the Miller index of a crystal plane of an upper surface of the base substance. The buffer film comprises ZrO2 epitaxially grown on the substrate.

The present invention relates to a method for etching a silicon-containing film, and more particularly, to a method for etching a silicon-containing film using a nitrosyl fluoride (FNO)-containing etching gas and a method for manufacturing a semiconductor device including the same.

An etching method includes: a) preparing, within a chamber, a substrate including a mask film containing ruthenium and having a predetermined pattern formed in the mask film, and a silicon-containing film provided under the mask film; b) supplying a process gas including a hydrocarbon-containing gas and a fluorine-containing gas into the chamber; and c) etching the silicon-containing film through the mask film using plasma generated from the process gas supplied into the chamber.

This invention relates to precursors and methods for (a) forming silicon-containing films and (b) functionalizing a substrate surface to form a germanium seed layer suitable for depositing Ge films. In one aspect, precursors of Formula I and / or Formula II as described herein are provided.

The application provides a receiving end filter and a preparation method thereof, and a combined filter, and belongs to the field of coating technology. The application solves the problem that the existing receiving end filter is relatively single. The receiving end filter comprises a glass substrate, a narrow-band pass film system and an anti-reflection film system. The narrow-band pass film system comprises silicon oxide film layers and hydrogenated silicon / hydroxylated silicon / nitrogen hydrogenated silicon film layers which are alternately deposited layer by layer, and a silicon oxide film layer as an outermost layer. The anti-reflection film system comprises silicon oxide film layers and hydrogenated silicon / hydroxylated silicon / nitrogen hydrogenated silicon film layers which are alternately deposited layer by layer, and a silicon oxide film layer as an outermost layer. The receiving end filter has the advantages that the overlapping high transmittance is achieved within an angle range of 0°-60° of an incident angle, and the demand cut-off spectrum band has the effect of inhibiting the transmission of light signals within the angle range of 0°-60° of the incident angle.