89 results about "Silicon membrane" patented technology

A film stack is formed a workpiece. The film stack is fabricated by sequentially depositing a carbon-doped silicon germanium stack and a silicon film to form a carbon-doped silicon-germanium and silicon mini-stack disposed on a substrate during a deposition cycle. The deposition cycle comprises exposing a workpiece including the substrate to a first gas including a first precursor to deposit a first silicon-germanium layer and exposing the workpiece to a second gas including the first precursor to deposit a carbon-silicon-germanium layer on the first silicon-germanium layer. Further, the deposition cycle includes exposing the workpiece to a third gas including the first precursor to deposit a second silicon-germanium layer on the carbon-silicon-germanium layer. The deposition cycle further includes exposing the workpiece to a fourth gas including a second precursor to deposit the silicon film on the second silicon-germanium layer. The second precursor differs from the first precursor.

The etching method disclosed herein includes a process (a) of preparing a substrate within a chamber of a plasma processing apparatus. The substrate includes a silicon-containing film. The etching method also includes a process (b) of etching the silicon-containing film by chemical species from a plasma formed from a process gas within the chamber. The process gas includes a phosphorous-containing gas, a fluorine-containing gas, and a hydrogen-containing gas. The hydrogen-containing gas contains at least one selected from the group consisting of hydrogen fluoride, H2, ammonia, and a hydrocarbon.

The present invention provides a chemical mechanical polishing composition comprising: (a) a titanium oxide abrasive; (b) an oxidizing agent; and (c) water, wherein the chemical mechanical polishing composition has a pH of about 7 or less. The invention also provides a method for chemical mechanical polishing of a substrate, in particular a substrate comprising a boron-doped polycrystalline silicon layer on a surface of the substrate, using the composition.

The application belongs to the technical field of metallurgy, and particularly relates to a device and method for preparing high-purity silicon film based on vacuum degree control electrolytic silicon purification. The device creates a closed environment through a vacuum cabin, and utilizes a connected vacuumizing mechanism and a vacuum degree adjusting device to accurately control the vacuum degree in the cabin. A material storage mechanism is used for storing silicon materials, and is composed of a corundum crucible and a graphite crucible sleeved outside the corundum crucible. A heating mechanism heats the materials through electromagnetic induction. The method first heats impurity-containing electrolytic silicon in a vacuum environment in a deimpurification mode, so that impurities with higher saturated vapor pressure are preferentially volatilized and deposited on the inner wall of the cabin, thereby realizing preliminary purification. Then, in an evaporation mode, the purified silicon material is heated to a volatilization temperature again, so that it is vapor-deposited on the upper base material to directly form a high-purity silicon film. The scheme integrates the purification and film forming processes, and simplifies the process.

The present application relates to the technical field of solar cells, in particular to a preparation of a laminated conductive film and its application in a crystalline silicon heterojunction solar cell, a transparent conductive film and a silicon film are prepared in sequence by magnetron sputtering technology to form a laminated conductive film, the preparation process is simple and efficient, and the conductive performance is significantly improved in the air environment and the heat treatment process. The laminated conductive film has good heat resistance in the air atmosphere, and after heat treatment at 100 DEG C-400 DEG C, the conductive performance is not only not attenuated but also improved, and the laminated film structure improves the stability of the transparent conductive film in acidic substances. The laminated conductive film is applied in a crystalline silicon heterojunction solar cell, the preparation process is simple, the production line has good compatibility, the service life of the heterojunction solar cell can be effectively prolonged, the reliability of the solar cell in long-term work is improved, the low packaging cost is maintained, and the application is suitable for large-scale production of high-efficiency and long-life heterojunction solar cells.

We provide technology to improve the etching shape. [Solution] The disclosed etching method includes (a) providing a substrate having a base film, a silicon-containing film on the base film, and a mask on the silicon-containing film into a chamber; (b) etching the silicon-containing film to form recesses using a first plasma generated from a first processing gas containing hydrogen fluoride gas and tungsten-containing gas; and (c) after step (b), further etching the silicon-containing film using a second plasma generated from a second processing gas containing hydrogen fluoride gas, wherein the second processing gas does not contain tungsten-containing gas, or contains tungsten-containing gas at a flow rate less than that of the tungsten-containing gas in the first processing gas.

A film structure comprises a substrate and a buffer film formed on the substrate. The substrate is a 36° to 48° rotated Y-cut Si substrate, or the substrate is a SOI substrate comprising a base substance made of the 36° to 48° rotated Y-cut Si substrate, an insulating layer on the base substance, and a SOI layer made of a Si film on the insulating layer, and a Miller index of a crystal plane of an upper surface of the SOI layer is equal to the Miller index of a crystal plane of an upper surface of the base substance. The buffer film comprises ZrO2 epitaxially grown on the substrate.

An etching method includes: a) preparing, within a chamber, a substrate including a mask film containing ruthenium and having a predetermined pattern formed in the mask film, and a silicon-containing film provided under the mask film; b) supplying a process gas including a hydrocarbon-containing gas and a fluorine-containing gas into the chamber; and c) etching the silicon-containing film through the mask film using plasma generated from the process gas supplied into the chamber.

The application provides a receiving end filter and a preparation method thereof, and a combined filter, and belongs to the field of coating technology. The application solves the problem that the existing receiving end filter is relatively single. The receiving end filter comprises a glass substrate, a narrow-band pass film system and an anti-reflection film system. The narrow-band pass film system comprises silicon oxide film layers and hydrogenated silicon / hydroxylated silicon / nitrogen hydrogenated silicon film layers which are alternately deposited layer by layer, and a silicon oxide film layer as an outermost layer. The anti-reflection film system comprises silicon oxide film layers and hydrogenated silicon / hydroxylated silicon / nitrogen hydrogenated silicon film layers which are alternately deposited layer by layer, and a silicon oxide film layer as an outermost layer. The receiving end filter has the advantages that the overlapping high transmittance is achieved within an angle range of 0°-60° of an incident angle, and the demand cut-off spectrum band has the effect of inhibiting the transmission of light signals within the angle range of 0°-60° of the incident angle.

The present application relates to titanium dioxide coating technical field, especially to a kind of titanium dioxide continuous flow general coating method and device, four reaction units are installed and connected from left to right in series, and the control of the installation and connection position of first metering pump, second metering pump, third metering pump, fourth metering pump, fifth metering pump, sixth metering pump is combined, so that the accurate control of material feeding position and feeding amount, in turn, titanium dioxide silicon film layer and aluminum film layer process are effectively controlled, and the control of the quality of silicon film layer, aluminum film layer coating in continuous flow process can be realized, the control of temperature and other process parameters in continuous flow reaction system is combined, silicon coating rate is promoted to reach 94% or more under 90-95 ℃, compared with gap method silicon coating rate 80.37%, about 14 percentage points are improved;Aluminum coating rate reaches 97% or more, compared with gap method aluminum coating rate 91.26%, about 6 percentage points are improved, improve titanium dioxide coating effect.

The present application provides a technique for improving a selection ratio at the time of etching a laminated film in which silicon oxide films and silicon films are alternately laminated. The present application provides an etching method for a laminated film in which silicon oxide films and silicon films are alternately laminated on a substrate, which is an etching method for forming a desired etching shape by plasma, including the steps of: a step of preparing the substrate; a step of cooling the surface temperature of the substrate to -40°C or lower; a step of generating plasma of a gas containing hydrogen and fluorine by high-frequency power for plasma generation; and a step of etching the laminated film by the generated plasma.

A method for depositing a film includes electron enhanced chemical vapor deposition with at least one hydride precursor, at least one reactive background gas, and electrons to deposit a film on a substrate having a positive substrate voltage. In an embodiment, the method is a method for depositing a silicon film including electron enhanced chemical vapor deposition with at least one Si precursor, at least one reactive background gas, and electrons to deposit a silicon film on a substrate having a positive substrate voltage. In this embodiment, the at least one Si precursor may include Si2H6, and the at least one reactive background gas may include H2.

The application provides a differential capacitive differential pressure sensor and a manufacturing method thereof, relates to the technical field of micro electro mechanical systems (MEMS), and comprises a substrate and differential pressure sensitive capacitors; the differential pressure sensitive capacitor comprises a differential pressure sensitive film, a lower electrode plate, a through hole and a support body; the differential pressure sensitive capacitor comprises a differential pressure sensitive film, an upper electrode plate, a through hole and a support body. The differential pressure sensitive capacitor and the differential pressure sensitive capacitor form a differential capacitor structure. The manufacturing method of the application is to manufacture a differential capacitive differential pressure sensor by using two SOI substrates and MEMS processes; the two differential pressure sensitive films are manufactured by etching the silicon films of the SOI substrates, and the thicknesses and shapes of the two differential pressure sensitive films are the same, so that the consistency of the two differential pressure sensitive films is ensured, and the accuracy of the capacitor spacing is ensured by using an oxidation process.

The invention discloses a crystalline silicon solar cell and a preparation method thereof. The crystalline silicon solar cell may include: a crystalline silicon substrate; the first intrinsic silicon-containing film layer is arranged on the main surface of the crystalline silicon substrate; the first doped silicon-containing film layer is arranged on the outer side of the first intrinsic silicon-containing film layer and comprises first doped atoms, the conduction type of the first doped atoms is opposite to that of second doped atoms contained in the crystalline silicon substrate, and the first doped silicon-containing film layer does not completely cover the first intrinsic silicon-containing film layer; the first transparent conductive film layer is arranged on the outer side of the first intrinsic silicon-containing film layer which is not covered by the first doped silicon-containing film layer and is in direct contact with the first intrinsic silicon-containing film layer; the second transparent conductive film layer is arranged on the outer side of the first doped silicon-containing film layer and is in direct contact with the first doped silicon-containing film layer; the first doped silicon-containing film layer and the second transparent conductive film layer are electrically isolated from the first transparent conductive film layer. The battery is simple in structure, the process complexity can be reduced, and structural damage caused by the preparation process is reduced.

A composition is used in a process for depositing a silicon oxide film or a carbon doped silicon oxide film using a deposition process, wherein the composition includes at least one silicon precursor having a structure represented by Formula I as described herein

The etching method of the present invention includes a step of preparing a substrate within a cavity of a plasma processing apparatus. The substrate includes a silicon-containing film. The etching method further includes a step of etching the silicon-containing film by means of chemical species from the plasma formed in the cavity by a process gas. The process gas includes halogen elements and phosphorus.

The present invention provides precursors for selective deposition of silicon-containing films. The precursor comprises a compound of the formula: R (HO) Si (OR1) (OR2) wherein: R is or comprises an alkyl, alkenyl or alkoxy group; and R1 and R2 are independently hydrogen, alkoxy, or R1 and R2 are bonded to form a heterocyclic ring. Also provided are devices comprising a silicon-containing film, wherein the silicon-containing film comprises a reaction product of the precursor with another reactive species. In addition, the invention also provides a method for depositing a silicon-containing film.

A low temperature etching method for selectively etching one or more silicon-containing films to form holes by using a patterned mask layer deposited on top of the one or more silicon-containing films in a substrate, the method comprising: mounting the substrate in a reaction chamber, cooling the substrate to a temperature below 25 DEG C, an etching gas C2H2F2 is introduced into the reaction chamber, and the etching gas is converted into a plasma; and allowing an etch reaction between the plasma and the one or more silicon-containing films such that the one or more silicon-containing films are selectively etched relative to the patterned mask layer to form the hole.

Methods of depositing silicon-containing films by plasma-enhanced vapor deposition, e.g., plasma-enhanced chemical vapor deposition (PECVD) or plasma-enhanced atomic layer deposition (PEALD), are disclosed. Exemplary methods include exposing a substrate in a processing system to a silicon-containing precursor; exposing the substrate to an oxygen-containing reagent; and exposing the substrate to a plasma of an inert gas.

An atomic layer deposition method for depositing a non-conformal silicon and oxygen containing film into surface features including vias and / or trenches on one or more substrates.

The invention relates to a method for producing a microelectronic device on an FD-SOI substrate, wherein the method comprises: forming a first well in a substrate (11) of a first wafer made of insulating material suitable for forming a shallow trench isolation (STI) (14); forming a strained silicon film (23) (sSi) covered with an oxide layer (24) on a second wafer; bonding the second wafer, after a vertical flip, onto the first wafer so that the oxide layer becomes a buried oxide layer (BOX) covered with the sSi film, which thus becomes a strained silicon on insulator film; removing the donor substrate while retaining the BOX layer and the sSi film; and forming a second isolation trench SSTI (34) by local oxidation of the silicon of the sSi film, which is connected to the STI via the BOX, to form a composite isolation structure (STI-BOX-SSTI).

The invention provides a substrate processing method, a substrate processing apparatus and a hard mask which can obtain a stable etching shape. A substrate processing method includes a step of preparing a substrate having a silicon-containing film, and a step of forming a hard mask, which is an amorphous film containing tungsten, silicon, and nitrogen, on the silicon-containing film by sputtering.

A film forming method for forming a silicon film on a substrate, includes preparing a substrate having a first film and a second film on a surface thereof, supplying a growth inhibiting gas that inhibits growth of the silicon film to the substrate, to cause physical adsorption of the growth inhibiting gas on the first film, and forming the silicon film on the first film and on the second film by supplying a silane-based gas having a silicon number 1 to the substrate having the growth inhibiting gas physically adsorbed on the first film.

A film forming composition is provided. The film forming composition comprises a silicon precursor having a structure according to general Formula (1):wherein, Q1 is a substituent selected from an acetoxy group, an acryloyloxy group, a C1 to C6 alkoxy group, a silyloxy group, a germyloxy group, a phosphonooxy group, and an alkyl amine group; and Q2, Q3, and Q4 are each a substituent independently selected from a hydrogen atom, a C1-C6 alkyl group, and the substituent group of Q1. Methods for forming the film forming composition and methods and systems for using the film forming composition to deposit a carbon doped silicon containing film on a substrate are also provided.

Examples are disclosed relating to filling gaps in a substrate using suppressed plasma enhanced atomic layer deposition (PEALD) including sputtering. One example provides a method that includes performing a plurality of PEALD cycles. The PEALD cycle includes, in the suppression step, forming a plasma using a gas mixture comprising an inhibitor to deposit the inhibitor into the gap on the substrate such that the concentration of the inhibitor deposited at the first depth is greater than the concentration of the inhibitor deposited deeper within the gap. The PEALD cycle further includes, in a deposition step, adsorbing the silicon-containing film precursor to the substrate, and forming a plasma to convert the interstitial silicon-containing film precursor into a silicon-containing film. At least one of the inhibiting step or the depositing step includes exposing the substrate to a plasma under conditions configured to sputter the silicon-containing film.

A film forming method according to one embodiment of the present disclosure comprises: preparing a substrate that has a first region in which a first silicon oxide film is provided and a second region in which a silicon film is provided; removing a natural oxide film that is formed on the surface of the silicon film by supplying a halogen-containing gas to the substrate; causing a metal catalyst-containing substance to be selectively adsorbed on the surface of the first silicon oxide film with respect to the surface of the silicon film by supplying a metal catalyst-containing gas to the substrate from which the natural oxide film has been removed; and forming a second silicon oxide film by reacting a silanol-containing gas with the metal catalyst-containing substance adsorbed on the surface of the first silicon oxide film by supplying the silanol-containing gas to the substrate on which the metal catalyst-containing substance has been adsorbed.

A technique improves etch selectivity. An etching includes (a) providing, in a chamber, a substrate including an underlying film and a silicon-containing film on the underlying film, (b) etching the silicon-containing film to form a recess with first plasma generated from a first process gas containing a hydrogen fluoride gas until before the underlying film is exposed at the recess or until the underlying film is partly exposed at the recess, and (c) further etching the silicon-containing film at the recess under a condition different from a condition of (b).

The invention relates to the technical field of diamond synthesis, and particularly provides a bonding type diamond heat dissipation material and a preparation method and application thereof. The heat dissipation material comprises 85%-95% of diamond powder, 0.1%-4% of catalyst powder, 0.1%-5% of silicon powder, 0.1%-5% of boron powder and 0.1%-5% of graphite powder. The preparation method comprises the following steps: preparing the silicon film diamond powder and the pre-bonding reaction powder; uniformly mixing the silicon film diamond powder and the pre-bonding reaction powder; directionally pressing into a molybdenum cup through magnetic control, and synthesizing into a synthetic block with a prefabricated assembly element; and carrying out high-temperature and high-pressure synthesis on the synthesized block. The problem of sufficient bonding among diamond particles is effectively solved, the heat conductivity of the prepared diamond cooling fin is close to the excellent performance of diamond single crystals, the content of diamond in the diamond cooling fin can reach 85%-95%, the void ratio is smaller than 1%, and the heat conductivity at the normal temperature is 500-1800 w / (m.K).

The invention discloses a bulk potential optimization structure of a thin silicon film SOI MOSFET and a preparation method of the bulk potential optimization structure, and belongs to the field of semiconductor device preparation. The top layer silicon, the buried oxide layer and the supporting layer jointly form an SOI substrate material; the bulk potential modulation region is located in the top layer silicon, is located at the bottom and is connected with the buried oxide layer; the channel region is positioned in the top layer silicon and is positioned above the body potential modulation region; the insulating dielectric layer is located above the exterior of the top silicon; the grid electrode is located on the insulating dielectric layer; the source and drain regions are located in the top layer silicon and on the two sides of the body potential modulation region and the channel region; and the doping element type of the channel region is the same as that of the body potential modulation region. By introducing the body potential modulation region, the resistance of the device body region is reduced, the potential of the body region is fixed, the body effect of the device is reduced, and the circuit design is simplified; impurity ions are introduced to the two sides of the interface of the top silicon and the buried oxide layer, the hole concentration near the interface is improved, the influence of radiation-induced holes is inhibited to a certain extent, the characteristic degradation degree of threshold drift and the like of the device is reduced, and the total dose resistance of the device is improved.