265 results about "Silicon membrane" patented technology

To provide a technique that can generate a large stress on a second surface of a substrate opposite to a first surface on which a device is formed.SOLUTION: A substrate processing method includes the steps of preparing a substrate having a first surface on which a device is formed, and depositing a silicon-containing film on a second surface opposite the first surface of the substrate using a high-order silane gas as a deposition gas at a temperature at which the high-order silane gas is liquefied.SELECTED DRAWING: Figure 1

A method and composition for depositing a silicon oxide film in an atomic layer deposition process at one or more temperatures of 600° C. or greater are provided. In one aspect, there is provided a method to deposit a silicon oxide film or material on a substrate in a reactor at one or more temperatures ranging from about 600° C. to 1000° C.; comprising the steps of: introducing into the reactor at least one halidocarbosilane precursor selected from the group of compounds having Formulae I and II described herein; purging the reactor with a purge gas; introducing an oxygen-containing source into the reactor; and purging the reactor with a purge gas; and wherein the steps are repeated until a desired thickness of silicon oxide is deposited.

A processing apparatus includes a first chamber having a gas first inlet and a first gas outlet, a plasma generator that generates a plasma in the first chamber, and a second chamber having a second gas inlet and a second gas outlet. A control unit controls the first inlet to provide a carbon containing gas to the first chamber and control the plasma generator to apply a first plasma to a silicon-containing film of a substrate to a first depth. The control unit controls the second gas inlet to apply another gas inside the second chamber and deposit a second part of the protection film over the first part of the protection film. The control unit controls a supply of a fluorocarbon gas through the first gas inlet and control the plasma generator to generate a second plasma to etch the silicon-containing film to a second depth.

A substrate-treatment method includes (a) providing a substrate at a stage, the substrate including a silicon nitride-containing film, in which a recess defined by a top, a side wall, and a bottom is formed, and a silicon film exposed from the bottom of the recess; (b) forming a silicon oxide film along the recess; (c) exposing the silicon oxide film to a plasma of a process gas containing a hydrogen gas, thereby modifying the silicon oxide film at the top and bottom of the recess selectively relative to the side wall by an anisotropic plasma treatment; and (d) selectively removing the modified silicon oxide film at the top and bottom of the recess through chemical etching without using a plasma, thereby retaining the silicon oxide film at the side wall of the recess.

The invention relates to a method of manufacturing a semiconductor device. An amorphous silicon film is formed on the semiconductor substrate in the first to fourth regions. The silicon film in the first region and the fourth region is removed such that the silicon film in the second region and the third region is left. The polycrystalline silicon film is formed by crystallizing the silicon film by heat treatment.

A film stack is formed a workpiece. The film stack is fabricated by sequentially depositing a carbon-doped silicon germanium stack and a silicon film to form a carbon-doped silicon-germanium and silicon mini-stack disposed on a substrate during a deposition cycle. The deposition cycle comprises exposing a workpiece including the substrate to a first gas including a first precursor to deposit a first silicon-germanium layer and exposing the workpiece to a second gas including the first precursor to deposit a carbon-silicon-germanium layer on the first silicon-germanium layer. Further, the deposition cycle includes exposing the workpiece to a third gas including the first precursor to deposit a second silicon-germanium layer on the carbon-silicon-germanium layer. The deposition cycle further includes exposing the workpiece to a fourth gas including a second precursor to deposit the silicon film on the second silicon-germanium layer. The second precursor differs from the first precursor.

The etching method disclosed herein includes a process (a) of preparing a substrate within a chamber of a plasma processing apparatus. The substrate includes a silicon-containing film. The etching method also includes a process (b) of etching the silicon-containing film by chemical species from a plasma formed from a process gas within the chamber. The process gas includes a phosphorous-containing gas, a fluorine-containing gas, and a hydrogen-containing gas. The hydrogen-containing gas contains at least one selected from the group consisting of hydrogen fluoride, H2, ammonia, and a hydrocarbon.

Provided is a technique for suppressing the occurrence of shape abnormalities during etching of a silicon film. The etching method includes: a step (a) in which a substrate having a silicon film or a silicon-containing conductive film and a mask on the silicon film or the silicon-containing conductive film is provided on a substrate support portion disposed in a chamber; and (b) supplying a processing gas containing a bromine-containing gas, a phosphorus fluoride gas, and an oxygen-containing gas into the chamber, and generating plasma from the processing gas to etch the silicon film or the silicon-containing conductive film.

Provided are methods for increasing the deposition rate and improving the film properties of silicon-containing films via plasma-enhanced atomic layer deposition (PEALD) by utilization of hydrogen peroxide. In particular, an exposure to hydrogen peroxide before, during, or after the plasma exposure step of a low temperature PEALD process utilizing silicon-containing compounds results in increased deposition rates and superior film characteristics as compared to PEALD processes using plasma alone. Additionally, the disclosed process may utilize non-oxidizing plasmas, increasing the range of substrates to which the process can be applied relative to those compatible with oxidizing plasmas.

The present invention provides a chemical mechanical polishing composition comprising: (a) a titanium oxide abrasive; (b) an oxidizing agent; and (c) water, wherein the chemical mechanical polishing composition has a pH of about 7 or less. The invention also provides a method for chemical mechanical polishing of a substrate, in particular a substrate comprising a boron-doped polycrystalline silicon layer on a surface of the substrate, using the composition.

The application belongs to the technical field of metallurgy, and particularly relates to a device and method for preparing high-purity silicon film based on vacuum degree control electrolytic silicon purification. The device creates a closed environment through a vacuum cabin, and utilizes a connected vacuumizing mechanism and a vacuum degree adjusting device to accurately control the vacuum degree in the cabin. A material storage mechanism is used for storing silicon materials, and is composed of a corundum crucible and a graphite crucible sleeved outside the corundum crucible. A heating mechanism heats the materials through electromagnetic induction. The method first heats impurity-containing electrolytic silicon in a vacuum environment in a deimpurification mode, so that impurities with higher saturated vapor pressure are preferentially volatilized and deposited on the inner wall of the cabin, thereby realizing preliminary purification. Then, in an evaporation mode, the purified silicon material is heated to a volatilization temperature again, so that it is vapor-deposited on the upper base material to directly form a high-purity silicon film. The scheme integrates the purification and film forming processes, and simplifies the process.

An etching method according to the present disclosure comprises: (a) a step for preparing, on a substrate support part which is disposed in a chamber, a substrate containing a silicon-containing film and a mask film on the silicon-containing film, wherein the mask film includes at least one opening; (b) a step for supplying, into the chamber, processing gas containing CxFy gas (x is an integer of 2 or 3, and y is an integer of not more than two times x), the step being (b-1) a step for supplying, into the chamber, the CxFy gas at a first flow rate, (b-2) a step for supplying, into the chamber, the CxFy gas at a second flow rate, which is smaller than the first flow rate, (b-3) a step for supplying, into the chamber, the CxFy gas at a third flow rate, which is smaller than the second flow rate, (b-4) a step for supplying the CxFy gas at a fourth flow rate, which is between the second flow rate and the third flow rate; and (c) a step for using a source RF signal to generate plasma from the processing gas and etch the silicon-containing film in said at least one opening, while the step (b) is carried out.

The invention provides a film forming apparatus and a method of manufacturing a member having a silicon-containing film. A film is formed while suppressing oxidation. The exhaust section depressurizes the inside of the chamber to a predetermined degree of vacuum. The holding unit is disposed in the chamber and holds a film-forming target member. The supply unit supplies a film-forming material containing silicon to the surface of a film-forming target member. The heat source is capable of heating at a predetermined degree of vacuum to melt the supplied film-forming material.

There is provided a technique that includes: (a) forming a silicon seed layer on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a1) supplying a first gas containing halogen and silicon to the substrate; and (a2) supplying a second gas containing hydrogen to the substrate; and (b) forming a film containing silicon on the silicon seed layer by supplying a third gas containing silicon to the substrate, wherein a pressure of a space in which the substrate is located in (a2) is set higher than a pressure of the space in which the substrate is located in (a1).

This substrate processing method includes: preparing a substrate having a first surface on which a device is formed; and forming a silicon-containing film on a second surface on the reverse side of the substrate from the first surface by using a higher silane gas as a film-forming gas at a temperature at which the higher silane gas is liquefied.

A silicon film in an amorphous state is formed on a semiconductor substrate located in a first to a fourth region. The silicon film located in the first region and the fourth region is removed, leaving the silicon film located in the second region and the third region. A polycrystalline silicon film is formed by crystallizing the silicon film through a heat treatment.

The present application relates to the technical field of solar cells, in particular to a preparation of a laminated conductive film and its application in a crystalline silicon heterojunction solar cell, a transparent conductive film and a silicon film are prepared in sequence by magnetron sputtering technology to form a laminated conductive film, the preparation process is simple and efficient, and the conductive performance is significantly improved in the air environment and the heat treatment process. The laminated conductive film has good heat resistance in the air atmosphere, and after heat treatment at 100 DEG C-400 DEG C, the conductive performance is not only not attenuated but also improved, and the laminated film structure improves the stability of the transparent conductive film in acidic substances. The laminated conductive film is applied in a crystalline silicon heterojunction solar cell, the preparation process is simple, the production line has good compatibility, the service life of the heterojunction solar cell can be effectively prolonged, the reliability of the solar cell in long-term work is improved, the low packaging cost is maintained, and the application is suitable for large-scale production of high-efficiency and long-life heterojunction solar cells.

We provide technology to improve the etching shape. [Solution] The disclosed etching method includes (a) providing a substrate having a base film, a silicon-containing film on the base film, and a mask on the silicon-containing film into a chamber; (b) etching the silicon-containing film to form recesses using a first plasma generated from a first processing gas containing hydrogen fluoride gas and tungsten-containing gas; and (c) after step (b), further etching the silicon-containing film using a second plasma generated from a second processing gas containing hydrogen fluoride gas, wherein the second processing gas does not contain tungsten-containing gas, or contains tungsten-containing gas at a flow rate less than that of the tungsten-containing gas in the first processing gas.

An etching method for forming an aperture in a substrate comprises exposing the substrate to an etching gas containing a non-cyclic C6F12; converting the etching gas to a plasma; allowing an etching reaction to proceed between the plasma and one or more silicon-containing films containing in the substrate so that the one or more silicon-containing films are selectively etched versus a patterned mask layer deposited on top of the one or more silicon-containing films to form the aperture therein and volatile by-products; and removing the volatile by-products. CO2eq emissions of the volatile by-products are reduced compared to an etching process using etching gases with GWP100>30.

A film structure comprises a substrate and a buffer film formed on the substrate. The substrate is a 36° to 48° rotated Y-cut Si substrate, or the substrate is a SOI substrate comprising a base substance made of the 36° to 48° rotated Y-cut Si substrate, an insulating layer on the base substance, and a SOI layer made of a Si film on the insulating layer, and a Miller index of a crystal plane of an upper surface of the SOI layer is equal to the Miller index of a crystal plane of an upper surface of the base substance. The buffer film comprises ZrO2 epitaxially grown on the substrate.

An etching method includes: a) preparing, within a chamber, a substrate including a mask film containing ruthenium and having a predetermined pattern formed in the mask film, and a silicon-containing film provided under the mask film; b) supplying a process gas including a hydrocarbon-containing gas and a fluorine-containing gas into the chamber; and c) etching the silicon-containing film through the mask film using plasma generated from the process gas supplied into the chamber.

This invention relates to precursors and methods for (a) forming silicon-containing films and (b) functionalizing a substrate surface to form a germanium seed layer suitable for depositing Ge films. In one aspect, precursors of Formula I and / or Formula II as described herein are provided.

The application provides a receiving end filter and a preparation method thereof, and a combined filter, and belongs to the field of coating technology. The application solves the problem that the existing receiving end filter is relatively single. The receiving end filter comprises a glass substrate, a narrow-band pass film system and an anti-reflection film system. The narrow-band pass film system comprises silicon oxide film layers and hydrogenated silicon / hydroxylated silicon / nitrogen hydrogenated silicon film layers which are alternately deposited layer by layer, and a silicon oxide film layer as an outermost layer. The anti-reflection film system comprises silicon oxide film layers and hydrogenated silicon / hydroxylated silicon / nitrogen hydrogenated silicon film layers which are alternately deposited layer by layer, and a silicon oxide film layer as an outermost layer. The receiving end filter has the advantages that the overlapping high transmittance is achieved within an angle range of 0°-60° of an incident angle, and the demand cut-off spectrum band has the effect of inhibiting the transmission of light signals within the angle range of 0°-60° of the incident angle.

The invention discloses a DNA microarray chip with an ordered nanostructure and application thereof, the DNA microarray chip is mainly composed of an ordered silicon film array formed by self-assembly of SiO2 microspheres, the particle size of the silicon spheres is 250-650nm, a single-layer densely arranged ordered nanostructure is formed on the surface of a silicon wafer, and probes are distributed on the silicon wafer modified by an aldehyde group to form a spot array. The silicon film array is used as a substrate, SiO2 microspheres are self-assembled on a silicon wafer, the SiO2 microsphere array has optical characteristics, movement of DNA to a solid-liquid interface is accelerated, the probability of collision between DNA and probe DNA is increased, and finally DNA hybridization efficiency and imaging efficiency are improved.

Micromechanical sensor (100), comprising: - a substrate (10); - a first functional layer (20) arranged on the substrate (10); - a second functional layer (30) arranged on the first functional layer (20) with movable micromechanical structures (31); - a cavity (11) arranged in the substrate (10) below the movable micromechanical structures (31); and - a vertical trench structure (40) formed circumferentially around the movable micromechanical structures (31) of the second functional layer (30) and extending into the substrate (10) up to the cavity (11), - wherein a membrane formed in the first functional layer (20) and delimited by the trench structure (40) is anchored vertically and / or laterally to the substrate (10), - wherein fixing elements of the movable micromechanical structures (31) on the first functional layer (20) and fixing elements (20d) of the first functional layer (20) on the substrate (10) are arranged substantially one above the other, - the cavity (11) is provided by means of an APSM cavity or a SON cavity or by means of a cSOl substrate, - where APSM stands for “advanced porous silicon membrane”, SON stands for “silicon-on-nothing”, and cSOl stands for “cavity substrate on insulator”.

Atomic layer deposition (ALD) process formation of silicon-containing film at temperature of about 700°C or lower is disclosed, wherein at least one organoamino- alkoxy-carbosilane precursor compound having two Si-C-Si linkages and selected from the group consisting of Formula IA, IB, IC, and ID: wherein R is selected from a linear or branched Ci to C10 alkyl group; R1 and R2 are each independently selected from hydrogen, a linear or branched Ci to C10 alkyl group, a linear or branched C2 to C10 alkenyl, and a C6 to C10 aryl group with a proviso that R1 and R2 cannot both be hydrogen, and with the proviso that for IC and ID, every R and every R1 and R2 cannot all be methyl; R1 and R2 are either linked to form a cyclic ring structure or R1 and R2 are not linked to form a cyclic ring structure.

Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon carbide, silicon nitride, silicon oxide, silicon oxynitride, a carbon-doped silicon nitride, a carbon-doped silicon oxide, or a carbon doped silicon oxynitride film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using a compound comprising a carbon-carbon double or carbon-carbon triple bond. The plasma source employed comprises both a remote plasma source and an in-situ plasma source operating in combination.

The plasma processing apparatus includes: a chamber; a substrate support unit which is disposed in the chamber and supports a substrate including a silicon-containing film; a gas supply unit capable of supplying a processing gas containing a hydrogen fluoride gas into the chamber; and a plasma generation unit capable of generating plasma from the process gas, in which at least one of the chamber and an internal member disposed in the chamber contains phosphorus.

The invention discloses a processing method of a semiconductor silicon substrate. The processing method comprises the following steps: forming a first layer of silicon film on the surface of the semiconductor silicon substrate; forming a second layer of silicon film on the surface of the first layer of silicon film; carrying out solid-phase crystallization on the second silicon film through chemical reaction or annealing treatment, and forming crystal grains; and forming a transverse pore structure in the second layer of silicon film. By adopting the technical scheme of the invention, the stress can be effectively released in the processing process of the semiconductor silicon substrate, so that the performance and the reliability of a chip are improved.

The siloxanes containing compositions and methods are disclosed. The disclosed method relates to a method of depositing a dielectric film on a substrate, the method involving the steps of a) placing the substrate in a reaction chamber; b) introducing a process gas comprising a cyclic silicon-containing compound and an oxidant; and c) exposing the substrate to the process gas under conditions such that the cyclic silicon-containing compound and the oxidant react to form a flowable film on the substrate surface. The method can further involve converting the flowable film into a solid dielectric material (e.g., a silicon oxide film). In certain embodiments, conversion of the film may be accomplished by annealing the as-deposited film by a thermal, plasma anneal and / UV curing.