1results about How to "Reduce metal pollution" patented technology

Provided is a technique capable of reducing metal contamination while performing direct-current sputtering using a gallium target. A direct-current sputtering device has: a substrate holding portion that holds a substrate; a target container that holds a gallium target containing gallium in a manner facing a main surface of the substrate in a first direction; a direct-current power source that applies direct-current electric power to the gallium target; and a conductor that is connected at one end to a negative side of the direct-current power source and at the other end to the gallium target inside the target container and is formed of a gallium corrosion-resistant metal. Further, the direct-current sputtering device has: a sputtering gas supply portion that has a gas supply port that supplies a sputtering gas between the target container and the substrate holding portion; and a magnet portion that is located on the side opposite the substrate holding portion with respect to the target container and has a ring-shaped high-density plasma region in which the density of plasmaized sputtering gas is higher than the surrounding on a surface on one side of the gallium target in the first direction.