941 results about "Metal contamination" patented technology

To provide a back-illuminated solid-state imaging device able to suppress a crystal defect caused by a metal contamination in a process and to suppress a dark current to improve quantum efficiency, a camera including the same and a method of producing the same, having the steps of forming a structure including a substrate, a first conductive type epitaxial layer and a first conductive type impurity layer, the first conductive type epitaxial layer being formed on the substrate to have a first impurity concentration, and the first conductive type impurity layer being formed in a boundary region to have a second impurity concentration higher than the first impurity concentration of the epitaxial layer; forming a second conductive type region storing a charge generated by a photoelectric conversion in the epitaxial layer; forming an interconnection layer on the epitaxial layer; and removing the substrate.

A method of forming an impurity-introduced layer is disclosed. The method includes at least a step of forming a resist pattern on a principal face of a solid substrate such as a silicon substrate (S27); a step of introducing impurity into the solid substrate through plasma-doping in ion mode (S23), a step of removing a resist (S28), a step of cleaning metal contamination and particles attached to a surface of the solid substrate (S25a); a step of anneal (S26). The step of removing a resist (S28) irradiates the resist with oxygen-plasma or brings mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH₄OH, H₂O₂ and H₂O into contact with the resist. The step of cleaning (S25a) brings mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH₄OH, H₂O₂ and H₂O into contact with the principal face of the solid substrate. The step of removing a resist (S28) and the step of cleaning (S25a) can be conducted simultaneously by bringing mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH₄OH, H₂O₂ and H₂O into contact with the principal face of the solid substrate.

The invention relates to a technique of remediation of slightly and medio- metal-contaminated vegetable soil with production. The specific steps are as follows: firstly, Sedum alfredii and Elsholtzia splendens are intercropped in vegetable soil contaminated by heavy metal such as cadmium, copper and zinc in spring with a with inter plant distance of ten to fifteen centimeters, row spacing of thirty centimeters; secondly, the Sedum alfredii is harvested periodically, a growth period of Sedum alfredii is three to four months during a first harvest, from then on, the Sedum alfredii is harvested every three months or when growing to a height of thirty to forty centimeters, stems of a height of two to three centimeters are left above the ground in harvest; the Elsholtzia splendens is harvested in October; thirdly, a cadmium-enriched rape is planted after the harvest of the Elsholtzia splendens with the spacing in the row of fifteen to twenty centimeters and is harvested in April of the next year; fourthly, a cucumber is planted after the harvest of the rape with the spacing in the row of twenty to twenty-five centimeters, a cabbage is planted after the harvest of the cucumber in September, the Elsholtzia splendens is planted after the harvest of the cabbage, then a restoring period is completed. Adopting a super accumulator plant for absorbing a plurality of heavy metal from the soil, the invention achieves reducing the heavy metal content in the vegetables and guaranteeing the safety of the farm produce.

A method to detect metal contamination on a semiconductor topography is provided. The semiconductor topography may include a semiconductor substrate or a dielectric material disposed upon a semiconductor substrate. The metal contamination may be driven into the semiconductor substrate by an annealing process. Alternatively, the annealing process may drive the metal contamination into the dielectric material. Subsequent to the annealing process, a charge may be deposited upon an upper surface of the semiconductor topography. An electrical property of the semiconductor topography may be measured. A characteristic of at least one type of metal contamination may be determined as a function of the electrical property of the semiconductor topography. The method may be used to determine a characteristic of one or more types of metal contamination on a portion of the semiconductor topography or the entire semiconductor topography. A system configured to detect metal contamination on a semiconductor topography is also provided. An oven may be incorporated into the system and may be used to anneal the semiconductor topography. The system may also include a device that may be configured to deposit a charge on an upper surface of the semiconductor topography. A sensor may also be included in the system. The sensor may use a non-contact work function technique to measure an electrical property of the semiconductor topography.

The invention provides a soil heavy metal composite passivating agent, comprising the following raw materials in percentage by mass of: 25% of slaked lime, 10-20% of monopotassium phosphate, 20-45% of plant ash and 20-45% of silkworm excrement. With the adoption of the soil heavy metal composite passivating agent disclosed by the invention, compared with a control group, an effective state lead content of the soil polluted by heavy metal is reduced by 20.23-47.61% within culture time of 30 days, and an effective state cadmium content is reduced by 20.15-50.57%; the passivating effect of the soil heavy metal composite passivating agent on the heavy metal is extremely obvious; and meanwhile, compared with the control group, the content of organic matters is improved by 48.62-64.47%, and the soil fertility is obviously improved. A method disclosed by the invention is applicable to repairing large-area heavy metal polluted soil and comprises the steps of repairing a heavy metal polluted farmland and repairing a heavy metal polluted mine; and the method has the advantages of lower cost, rapidness for repairing, simplicity in operation, feasible method and extremely great popularization value.

A problem in the conventional technique is that metal contamination on a silicon carbide surface is not sufficiently removed in a manufacturing method of a semiconductor device using a monocrystalline silicon carbide substrate. Accordingly, there is a high possibility that the initial characteristics of a manufactured silicon carbide semiconductor device are deteriorated and the yield rate is decreased. Further, it is conceivable that the metal contamination has an adverse affect even on the long-term reliability of a semiconductor device. In a manufacturing method of a semiconductor device using a monocrystalline silicon carbide substrate, there is applied a metal contamination removal process, on a silicon carbide surface, including a step of oxidizing the silicon carbide surface and a step of removing a film primarily including silicon dioxide formed on the silicon carbide surface by the step.

Multifunction production equipment enabling a plurality of processes in which deposition of reaction products on the inner wall of the processing chamber of equipment for producing a semiconductor or a flat-plate display, metal contamination due to corrosion of the inner wall, or the like, and fluctuation of the process due to discharged gas are suppressed, and a protective film structure for use therein. On the surface of a metal material, a first coating layer having an oxide coating of 1μ thick or less formed as an underlying layer by direct oxidation of a parent material, and a second coating layer of about 200 μm thick are formed. With such an arrangement, corrosion resistance against irradiation with ions or radicals can be imparted to a second layer protective film, and the effect of a protective layer for preventing corrosion of the surface of parent metal caused by diffusing molecules or ions into the second layer protective film can be imparted to the first layer oxide film. Consequently, contamination of the substrate with metals generated from each metal member and the inner surface of the process chamber is reduced, and stripping of the second layer protective film due to lowering in adhesion of the second layer protective film due to corrosion of the interface between the parent material and the second layer protective film can be suppressed.

A substrate processing apparatus for supplying a treatment liquid onto the surface of a substrate to treat the same. This apparatus is provided with: a spin chuck for holding and rotating a substrate; a nozzle for supplying a treatment liquid to the substrate held by the spin chuck; a circulating passage arranged such that the treatment liquid supplied to the substrate from the nozzle and used for substrate treatment is circulated to the nozzle and reutilized for substrate treatment; a metal contamination amount measuring device for measuring the metal contamination amount in the treatment liquid passing through the circulating passage; and a judgment processing unit for judging whether or not the value measured by the metal contamination amount measuring device has exceeded a predetermined set value.

The present invention provides for a low-temperature method to crystallize a silicon-germanium film. Metal-induced crystallization of a deposited silicon film can serve to reduce the temperature required to crystallize the film. Increasing germanium content in a silicon-germanium alloy further decreases crystallization temperature. By using metal-induced crystallization to crystallize a deposited silicon-germanium film, temperature can be reduced substantially. In preferred embodiments, for example in a monolithic three dimensional array of stacked memory levels, reduced temperature allows the use of aluminum metallization. In some embodiments, use of metal-induced crystallization in a vertically oriented silicon-germanium diode having conductive contacts at the top and bottom end is be particularly advantageous, as increased solubility of the metal catalyst in the contact material will reduce the risk of metal contamination of the diode.

The invention discloses a metal etching device and method which can be used in a large-scale integrated circuit industrial manufacturing environment. Particularly, by means of the metal etching device and method, in a vacuum uninterrupted environment, magnetic tunnel junctions of a magnetic random access memory (MRAM) are subjected to etching and etching post-processing in a reactive-ion plasma etching chamber and an ion beam etching chamber and then subjected to coating surface protection in a coating chamber, so that the side wall of the magnetic tunnel junctions are free of metal contamination after being etched, the chemical and physical structures of the magnetic tunnel junctions are consistent with the chemical and physical structures before etching, the magnetic tunnel junctions can be taken out from etching equipment and not destroyed by the air environment, and the yield of MRAM devices is effectively increased. In addition, the metal etching device and method are also applicable to etching of resistive random access memories and other metals.

Polysilicon is crushed with a minimum of manual and machine crushing steps by utilizing a large diameter roll crusher, the circumferential crushing surface of which is formed of a plurality of reversibly mounted, close fitting hard metal plates. Reproducible crushing along with such low metal contamination that subsequent cleaning of the crushed polysilicon is not necessary are both obtained.

The invention provides a microbial composition comprising acetobacter aceti, beauveria bassiana, azospirllum brasilense, nocardia cellulans, bacillus mucilaginosus, metarhizium anisopliae, trichoderma aureoviride and the like. The microbial composition can be stably combined in a microbial agent, is used for improving soil/land and especially can be used for effectively improving soil polluted by heavy metals.

The invention discloses a cadmium-arsenic absorbing material and a preparing method and application thereof. The cadmium-arsenic absorbing material includes the steps that biomass is smashed and heated to 500 DEG C quickly under the limited oxygen or oxygen-free condition, then thermal cracking is conducted till the biomass is totally carbonized, the biomass is cooled naturally to the room temperature, smashing is conducted, and an absorbing material precursor is obtained; the absorbing material precursor is mixed with a ferric salt solution, a mixture of the absorbing material precursor and the ferric salt solution is prepared, the mixture is placed at the temperature of 110 DEG C to 150 DEG C to conduct reaction for 12 hours and then is cooled to the room temperature, dissociative ferric salt remaining on the surface of the material is washed out, and the cadmium-arsenic absorbing material is obtained after being dried at 80 DEG C. The cadmium-arsenic absorbing material and the preparing method and application can be used for absorbing cadmium and/or arsenic and restoring soil or water polluted by heavy metal; secondary pollution is avoided; the soil physicochemical property is improved; meanwhile, biomass waste is converted into a soil restoration material, the cadmium-arsenic absorbing material is low in cost and wide in source, and the soil restoration cost is lowered.

The in-situ efficient heavy metal polluted soil repairing technology without secondary pollution is to combine electric power and in-situ PRB technology. Graphite electrodes are mounted on two sides of the polluted soil and PRB is set inside the soil between these two electrodes, so that under the action of the electric field, metal anions, such as Cr ion can migrate to anode, metal cations, such as Cd2+ and Hg2+ can migrate to cathode and heavy metals can react with PRB to be adsorbed, reduced and precipitated. The said technology can eliminate polluting heavy metals from soil completely, avoid the secondary pollution to water and reduce the changes of soil in physical and chemical properties.

The invention discloses a prediction method for distribution of each heavy metal in heavy metal polluted flow on a soil-water interface of a non-ferrous metal orefield. The technical points are as follows: the measured data of a sampling site on the soil-water interface of the non-ferrous metal orefield is taken a basis, a BP (back propagation) prediction model for distribution of each heavy metal in heavy metal polluted flow on the soil-water interface of the non-ferrous metal orefield based on GIS (geographic information system) technology support is constructed by utilizing a geostatistic method and combining the GIS technology in virtue of BP neural network technology principle to predict the contents, spatial variability and distribution of each heavy metal in the metal polluted flow on the soil-water interface, and the spatial distribution graph of heavy metals on the soil-water interface is drawn by ArcGIS software. According to the invention, theoretical basis and scientific reference are provided for ecology risk evaluation, control, treatment, restoration and the like of heavy metal pollution of the non-ferrous metal orefield, the accord development of the orefield and the mining cities is promoted, and great application value and social benefits are achieved.

The invention discloses a magnetic biochar based on iron-enriched plants, and a preparation method and an application thereof. The magnetic biochar based on iron-enriched plants is obtained by directly carrying out high-temperature pyrolysis carbonization or hydrothermal carbonization on the iron-enriched plants. A large amount of iron is accumulated in the iron-enriched plants, and typical iron-enriched plants such as cogongrass are subjected to a high-temperature pyrolysis carbonization or hydrothermal carbonization process to obtain biochar. In the carbonization process, iron enriched in other forms in the plants is converted into magnetic iron oxide, so that the obtained biochar is magnetic biochar, magnetization and carbonization can be synchronously completed without additionally adding a magnetizing agent, no secondary pollution is generated in the preparation process, and the operation is simple. The magnetic biochar can effectively remove heavy metal pollutants in undergroundwater, and has a wide application prospect in the field of underground water heavy metal pollution treatment.

Since a supporting wafer contains boron of 9×10¹⁸ atoms/cm³ or more, therefore a part of the metal impurities in an active layer wafer and the metal impurities in the wafer can be captured by the boron during the heat treatment for bonding. As a result, metal contamination in the active layer can be reduced. Moreover, the wafer strength is enhanced, thus preventing the wafer slipping. Since the wafer has no COP, micro voids are not detected in the LPD evaluation of the active layer, thereby improving the reliability of the evaluation. Such a bonded wafer can be manufactured at a low cast.

The invention discloses a heavy metal contaminated soil remediation method and a device thereof. The heavy metal contaminated soil remediation method comprises the following steps: crushing, screening, washing, precipitating, adding chemicals and reacting, standing and maintaining. The device used by the method comprises a crushing device, a vibrating and screening device, a washing device, a precipitating tank, a filtering device, a chemical adding device and a stirring device which are sequentially connected with one another. The heavy metal contaminated soil remediation method has high systematicness and continuous operation performance; the contaminated soil treatment process can be comprehensively controlled and managed; the construction operation area is reduced; the secondary pollution to the environment is reduced; the utilization rate of resources in the system is increased; the soil remediation effect and remediation efficiency can be improved; and the soil remediation cost can be reduced.

Embodiments of the systems and methods herein are directed towards forming, via ALD or CVD, a protective film in-situ on a plurality of interior components of a process chamber. The interior components coated with the protective film include a chamber sidewall, a chamber bottom, a substrate support pedestal, a showerhead, and a chamber top. The protective film can be of various compositions including amorphous Si, carbosilane, polysilicon, SiC, SiN, SiO₂, Al₂O₃, AlON, HfO₂, or Ni₃Al, and can vary in thickness from about 80 nm to about 250 nm.

The invention discloses a method for removing heavy metal in soil, and belongs to the field of polluted soil treatment. The method comprises the following steps: adjusting the water content of the soil to be treated to 8%-12%; uniformly adding a magnetic adsorption material into the soil with adjusted water content, wherein the adding amount of the magnetic adsorption material is 10-50 g per 1 kg of soil; regularly adjusting the water content of the soil after magnetic adsorption material addition, maintaining the water content of the soil to 8%-12%, regularly and uniformly stirring the soil; collecting the magnetic adsorption material in the soil treated by above procedures for a certain period in a manner of magnetic separation so as to complete the removal of heavy metal in the soil. The method has simple operations, can realize high-efficient low-cost treatment of heavy metal-polluted soil, and has the advantages of low energy consumption and environment protection; the method can be combined with common technology of phytoremediation of heavy metal-polluted soil, and has good popularization and application value.

A particle removal apparatus for removing particles from a chamber of a plasma processing apparatus, wherein the chamber is connected to a gas exhaust port and a plasma of a processing gas is generated in the chamber to plasma process a substrate to be processed, includes a particle charging control member for positively charging particles generated within the chamber by positive ions of an ion sheath region formed in a region other than the vicinity of the substrate to be processed, wherein positively charged particles are discharged from the chamber via the gas exhaust port. Therefore, there is no plasma disturbance or metal contamination, and thus can be applied to a practical use.

An effect of metal contamination caused in manufacturing an SOI substrate can is suppressed. A damaged region is formed by irradiating a semiconductor substrate with hydrogen ions, and then, a base substrate and the semiconductor substrate are bonded to each other. Heat treatment is performed thereon to cleave the semiconductor substrate, so that an SOI substrate is manufactured. A gettering site layer is formed of a semiconductor containing a Group 18 element such as Ar, over a semiconductor layer of the SOI substrate. Heat treatment is performed thereon to perform gettering of a metal element in the semiconductor layer with the gettering site layer. By removing the gettering site layer by etching, thinning of the semiconductor layer can be performed.

A semiconductor device includes a substrate; an inter layer dielectric disposed on the substrate; a TSV penetrating the substrate and the ILD. In addition, a plurality of shallow trench isolations (STI) is disposed in the substrate, and a shield ring is disposed in the ILD surrounding the TSV on the STI. During the process of forming the TSV, the contact ring can protect adjacent components from metal contamination.

The invention relates to the field of soil remediation and discloses an in-situ bioremediation preparation for heavy metal contaminated soil. The preparation contains fungi and/or bacteria with heavy metal degrading abilities, the fungi refer to at least one of aspergillus niger, rhizomucor variabilis and grey cunninghamella, and the bacteria refer to at least one of bacillus amyloliquefaciens, bacillus licheniformis and bacillus simplex. By using the preparation for in-situ bioremediation of the heavy metal contaminated soil, the problems that the soil needs to move by using a moving method and secondary chemical agent pollution of the cultivated land is easily caused by using a decomposition method can be overcome, at the same time, residual heavy metals in the soil obtained after catabolism through the fungi and/or bacteria can also be fully used, the problem that high residual heavy metals in the soil seriously endanger food safety is solved, the soil micro-ecology is improved, the cultivated ability of soil is more quickly recovered, and the method is relatively low in cost and has broad application prospects.