897 results about "Metal impurities" patented technology

The invention relates to the technical field of hafnium tetrachloride preparation, in particular to a process method for preparing low-niobium-content hafnium tetrachloride based on a hydrogen reduction method, which comprises the following steps: S1, raw material processing, S2, chlorination and impurity removal, S3, purification, S4, refining and S5, material receiving. According to the method, metal impurities in the hafnium-containing raw stone are removed step by step through the working procedures of raw material processing, chlorination and impurity removal, purification, refining and material receiving, high-purity hafnium tetrachloride with the low niobium content is obtained, in the refining working procedure, under the assistance of the supported catalyst, the metal niobium impurities are removed through a hydrogen reduction method, the removal rate is effectively increased, and the production cost is reduced. And moreover, the process flow is simplified, the energy consumption is reduced, and the method meets the environmental protection requirement.

The invention relates to the technical field of injection molding waste plastic recovery, in particular to injection molding equipment and a process for producing plastic automobile ornaments. The equipment comprises an injection machine and an online recycling mechanism, the injection machine is provided with a double-channel solution cavity composed of a new material main runner and a waste material returning cavity, and the tail ends of the two channels converge in a 30-degree Y shape; the on-line recovery mechanism comprises a waste conveyor belt, a crushing mechanism and a transmission device, a magnetic separation impurity removal device is arranged in the crushing mechanism, and a discharge end is connected with the batching mechanism. Through double channels and a Y-shaped confluence structure, production waste is subjected to online recovery and crushing and then is fused, mixed and reused with new materials, the waste utilization rate is increased, and the cost is reduced. The magnetic separation and impurity removal device efficiently removes metal impurities through the movement of inclined avoiding, rotary impurity scraping and inclined discharging of a scraping plate; the batching mechanism removes dust to prevent impurities from affecting melt performance. The crushing device adapts to different waste materials, airflow assists discharging to improve the efficiency, and the green production concept is met.

The invention discloses a processing method for reducing the broken rice rate of commercial rice, which comprises the following steps: S1, an unhulled rice pretreatment stage: S1a, a multi-stage linkage impurity removal process is adopted, and large impurities, light impurities, metal impurities and stones in unhulled rice are removed through combination of classified screening, airflow separation, magnetic separation and specific gravity stone removal, so that the impurity removal rate is greater than or equal to 99%; s1b, on the basis of a dynamic adaptation model of rice physical characteristics and rice hulling parameters, rice moisture and hardness data are collected in real time through a first detection device, the rice hulling flow and the inter-roller pressure are calculated and adjusted through a control unit, and closed-loop control is achieved; s2, carrying out a color sorting and polishing stage; s3, carrying out a rice milling regulation and control stage; and S4, entering a vacuum packaging stage.

The invention discloses a method for synthesizing electronic-grade ethyl acetate through catalytic esterification of acidic ion exchange resin, and belongs to the technical field of ethyl acetate preparation. The method comprises the following steps: mixing crosslinked polystyrene white balls and a swelling agent, and dropwise adding concentrated sulfuric acid for reaction to obtain S-PS resin; mixing an EDTA disodium salt saturated solution and a polyacrylic acid solution, adding a cross-linking agent and an emulsifier, and carrying out a cross-linking curing reaction to obtain EDTA microcapsules; the preparation method comprises the following steps: dispersing S-PS resin in a solvent, adding EDTA microcapsules, a dehydration condensation agent and a catalyst, reacting under the protection of inert gas, and filtering and recovering after the reaction is finished to obtain S-PS-EDTA resin; mixing glacial acetic acid, absolute ethyl alcohol and S-PS (at) EDTA resin for reaction, and filtering and collecting liquid after the reaction is finished; and rectifying the collected liquid to obtain the product. According to the method provided by the invention, metal impurities can be chelated in the synthesis process, and the electronic-grade ethyl acetate with high purity and low impurity content is produced.

The invention discloses a scrap aluminum classification and rapid identification method, and relates to the field of scrap aluminum classification and rapid identification, the method comprises the following steps: S1, grading pretreatment: to-be-sorted scrap aluminum is conveyed into a three-layer vibrating screen machine through a conveying belt for grading screening, and different sizes of scrap aluminum are sorted out; and S2, impurity separation is conducted, specifically, the classified scrap aluminum is conveyed into a drum-type magnetic separator, magnetic impurities are removed, then the scrap aluminum subjected to magnetic separation is conveyed to an airflow separator, light non-metal impurities are separated, then the scrap aluminum is conveyed to an objective table through a conveying belt, full-process automatic treatment is conducted, manual dependence is reduced, the production efficiency is improved, and the production cost is reduced. A single production line can reduce the workload of sorting workers; and compared with manual sorting, due to the fact that classification is accurate, the rejection rate of the regenerated aluminum alloy can be effectively reduced, and economic benefits are remarkably improved.

The invention relates to a hollow silicon dioxide microsphere and a preparation method and application thereof, the hollow silicon dioxide microsphere has a dielectric constant less than or equal to 2.5, a dielectric loss tangent angle less than or equal to 0.001, a purity greater than 95%, a sphericity rate greater than or equal to 99%, a wall thickness greater than 0 and less than or equal to 0.42 [mu] m, and an average diameter of 0.1 [mu] m-5 [mu] m, and the hollow rate, the wall thickness and the average particle size satisfy a relational expression, eta is the hollow rate, t is the wall thickness, and R is 1 / 2 of the average particle size. The hollow silicon dioxide microspheres provided by the invention are high in spherical rate, firm in wall thickness, uniform in particle size distribution, high in purity, relatively excellent in dielectric property and extremely low in content of metal impurities, and can meet the application requirements of high-speed and high-frequency substrates, in addition, the preparation method provided by the invention is few in adopted raw materials, simple in preparation process, low in cost and high in efficiency.

The invention relates to the technical field of sodium battery material preparation, in particular to a preparation method of a sodium battery hard carbon material. The method comprises the following steps: raw material treatment: moso bamboo or shell biomass is subjected to bubble crushing treatment to obtain raw material particles, the crushing air pressure is 0.5-3 MPa, and the raw material particles are crushed until the particle size is 50-200 [mu] m; pre-carbonization: carrying out stepped heating on the raw material particles under a protective atmosphere; carrying out heat preservation for 0.5-1 hour at an initial temperature of 200-250 DEG C, then heating to 400-600 DEG C at a speed of 5-10 DEG C / min, and carrying out heat preservation for 1-3 hours to obtain a pre-carbonized product; according to the method, the protective atmosphere is introduced at intervals by adopting a dynamic regulation and control strategy in the pre-carbonization step, so that the consumption of the protective gas is effectively reduced, meanwhile, the volatile matter content of the hearth is monitored in real time by adopting a non-contact conductivity sensor, and once the volatile matter content exceeds a preset threshold value, a shutdown signal is immediately sent to a gas tank; therefore, the residual quantity of metal impurities is effectively reduced.

The invention discloses a crystal growth device and a crystal growth method for gallium oxide crystal downward growth, and belongs to the technical field of gallium oxide single crystal preparation. The device comprises a crucible, an upper shaft, a heating mechanism and a heat preservation mechanism, the crucible is composed of a metal layer and an isolation layer arranged on the inner side wall of the metal layer, an opening is formed in the top of the metal layer, the thermal expansion coefficient of the side, away from the metal layer, of the isolation layer ranges from 0.5 * 10 <-6 > k <-1 > to 2.5 * 10 <-6 > k <-1 >, and the thermal expansion coefficient of the isolation layer is gradually increased outwards from the side, away from the metal layer, of the isolation layer. The rising rate is 2 * 10 <-6 >-3 * 10 <-6 > k <-1 > / mm; the upper shaft is arranged above an opening of the crucible and can lift and rotate relative to the crucible, a seed crystal support is arranged below the upper shaft, a first cooling pipeline is arranged in the upper shaft, and a second cooling pipeline is arranged in the seed crystal support. The crystal growth device breaks through the limitation of a traditional Czochralski method, a casting method and a Bridgman method, realizes downward growth of crystals, and can reduce the influence of crucible metal impurities on the crystals, so that gallium oxide single crystals with high quality, large size and high yield are obtained.

The invention relates to the technical field of preparation of high-purity boron oxide, and discloses a purification method of high-purity boron oxide and a device thereof, and the purification method comprises the following steps: step 1, mixing crude boron oxide with a liquid metal alloy, and dissolving metal impurities through gradient temperature control; 2, applying ultrasonic treatment to the mixed system, introducing a vortex field, and stripping impurities on the surface of the boron oxide; 3, a liquid metal phase and a boron oxide solid phase are separated through cooperation of a magnetic field and a pulse high-voltage electrostatic field; 4, non-metal ion impurities are removed through a gradient porous ceramic adsorption bed; and step 5, melting boron oxide in vacuum and carrying out gradient cooling crystallization. By adopting the technical scheme of a Ga-I n-Bi-Er quaternary liquid alloy system, the technical effect of selective targeted removal of metal impurities is achieved, and compared with a liquid metal system depending on single phase solubility difference in the prior art, the defect that efficient chelating and dynamic settling separation of the impurities cannot be achieved at the same time is overcome.

The invention discloses a silicon powder activity on-line dynamic monitoring method, which comprises the following steps: S1, on-line monitoring: monitoring characteristic parameters by using a plurality of spectrum detectors in the operation process of a fluidized bed; s2, parameter conversion: calculating intermediate parameters according to a parameter conversion formula by utilizing the characteristic parameters monitored in the step S1 in the online monitoring; and S3, activity calculation: calculating the real-time activity index of the silicon powder in the fluidized bed according to an activity calculation formula by using the intermediate parameters calculated in the step S2. The method has the advantages that the activity condition of the silicon powder in the fluidized bed can be accurately reflected in real time, and a scientific basis is provided for evaluating the activity of the silicon powder by accurately calculating key parameters such as a hydroxyl inhibition factor, an amorphous phase activity gain and a metal impurity inhibition factor; a regulation and control basis is provided for real-time regulation and control of the feeding proportion and the like of the fluidized bed, the production process is optimized, the product quality is improved, the production cost is reduced, and remarkable economic benefits are brought to enterprises.

The invention relates to the technical field of waste resourceful treatment, in particular to a sponge titanium weight bottom skin crushing and impurity removing method which comprises the following steps of peeling, bottom skin brake cutting, water jet cutting and crushing, acid leaching and impurity removing, ultrasonic cleaning, argon drying and screening and recycling. The bottom skin is crushed into small-granularity particles by adopting a cross grid water jet cutting technology, metal impurities such as Fe and Ni are removed in combination with acid leaching treatment, residual impurities are removed through multi-stage ultrasonic cleaning, oxidation discoloration is avoided through argon atmosphere drying, and meanwhile water jet sand is recycled; in the process, key indexes such as brake cutting pressure, cutting parameters, acid leaching time and ultrasonic frequency are accurately controlled through a quantification formula. The method effectively solves the problems that equipment is easy to damage during crushing and impurities are difficult to remove in a traditional process, remarkably improves the grade of bottom leather materials, widens the downstream application range, improves the resource utilization rate and economic benefits, and is suitable for industrial batch production.

The invention provides a treatment method for recovering high-purity graphite from black powder leaching residues. The treatment method comprises the following steps: removing impurity elements in graphite from the black powder leaching residues in a Joule heat flash evaporation manner; the black powder leaching residues obtained after impurity removal are put into a ball mill, liquid phenolic resin is added, full mixing is conducted, and ball milling is conducted; and putting the ball-milled mixture into flash evaporation Joule thermal equipment, and carbonizing and graphitizing the phenolic resin to obtain regenerated graphite. According to the method, the temperature of the black powder leaching residues can be increased within an extremely short time, metal impurities in the black powder leaching residues are gasified, and impurities in graphite are removed. Phenolic resin is used for carbonization and graphitization, generated disordered carbon can fill up particle cracks in waste graphite and internal lattice defects, a conductive network among graphite particles is established, a compact carbon layer is formed on the surface of graphite, and graphite structure transformation can also be induced in the step. The regenerated graphite obtained by the method is similar to commercial graphite in capacity and good in cycling stability.

The invention discloses a gallium nitride electronic device and a preparation method thereof, and belongs to the technical field of semiconductors, the gallium nitride electronic device comprises a gallium nitride substrate and a semiconductor structure layer arranged on the gallium nitride substrate; the gallium nitride substrate is provided with shallow-energy-level donor impurities and deep-energy-level acceptor impurities, the deep-energy-level acceptor impurities are used for compensating the shallow-energy-level donor impurities, and the deep-energy-level acceptor impurities are metal impurities; a compensation layer is arranged at the interface of the gallium nitride substrate and the semiconductor structure layer, and the concentration of deep-energy-level acceptor impurities in the compensation layer is larger than that of the deep-energy-level acceptor impurities in the gallium nitride substrate. Metal impurities are doped in the gallium nitride substrate to serve as deep-energy-level acceptor impurities to compensate shallow-energy-level donor impurities, the concentration of impurity atoms adsorbed on the surface of the gallium nitride substrate can be reduced, and the performance of a gallium nitride electron tube device is improved.

The invention discloses a rinsing process for deep cleaning of purified natural quartz, which comprises the following steps: putting acid-washed quartz sand into a cleaning medium tank containing a mixed cleaning solution of deionized water and absolute ethyl alcohol for cleaning, and applying ultrasonic waves in the cleaning process; the cleaned quartz sand is put into a cleaning medium tank containing a mixed cleaning solution composed of deionized water, hydrogen peroxide and hydrofluoric acid to be cleaned, and ultrasonic waves are applied in the cleaning process; and the cleaned quartz sand is put into a cleaning medium tank containing deionized water to be rinsed so as to remove acid pickling residues to achieve deep cleaning, and ultrasonic waves are applied in the cleaning process. According to the method, a three-step cleaning scheme is innovatively adopted, so that loose impurities on the surfaces of quartz sand particles and organic reagent residues of a flotation process are efficiently stripped; the three steps are clear in function and have a synergistic effect, and the cleaning effect is far better than that of traditional single washing.

The invention relates to the technical field of semiconductor materials, in particular to a method for preparing a semiconductor material from high-purity quartz sand. The method comprises the following steps: firstly, grafting and modifying the surface of quartz sand through 3-aminopropyltriethoxysilane, complexing metal impurities by using amino functional groups, and improving the purity of a precursor from the source; secondly, hydrogen / deuterium gas pulse back-and-forth switching is adopted, surface hydrogen atom dynamics is regulated and controlled through the isotope effect, and an etching-nucleation synergistic window is created; and finally, through sequential alternate supply of silane and disilane, time separation of a weak bond etching period and a high-activity nucleation period is realized. The prepared semiconductor material shows excellent performance, and compared with a traditional method, the technical problem of low-temperature deposition of a high-quality semiconductor film is solved through full-process optimization from a material source to a deposition end.

The invention relates to the technical field, in particular to a plastic storage box blank forming machine which comprises a feeding box shell, a storage tank, a screening bin and a hot drying bin are sequentially arranged in the feeding box shell from top to bottom, conveying belts are symmetrically arranged in the screening bin, and shape follow-up electromagnets are arranged in the conveying belts; the shape follow-up electromagnet is used for adsorbing metal impurities in the raw materials to realize screening; porous ventilation hoods communicating with the hot drying bin are symmetrically arranged at the bottom of the feeding box shell, an extrusion barrel communicating with the hot drying bin is fixedly connected to one side of the feeding box shell, and an extrusion auger is rotationally connected to the interior of the extrusion barrel. The controller is combined with detection data of the first temperature sensor and the second temperature sensor, and the heating power of the electric heater and the output power of the fan are dynamically regulated and controlled, so that when the extrusion rate needs to be increased during production of a large-specification storage box, the hot air temperature and air volume are automatically increased, and the situation that raw materials are insufficiently dried due to the fact that feeding speed is increased is avoided.

A production process of electronic grade molybdenum dichloride dioxide comprises the following steps: S1, pretreatment: contacting molybdenum trioxide with a dilute acid solution at a low temperature for pickling to remove alkaline impurities and soluble metal impurities adsorbed on the surface, and drying for later use after washing; s2, wet synthesis: in an inert gas atmosphere, reacting the molybdenum trioxide subjected to acid pickling in the step S1 with concentrated hydrochloric acid of which the mass is 4-5 times of that of the molybdenum trioxide at 80-100 DEG C, and after the reaction is finished, evaporating and concentrating in a high-temperature chlorine atmosphere to generate a crude product of dichloromolybdenum dioxide; s3, primary sublimation purification; s4, complexing and decomplexing purification; and S5, secondary sublimation purification: using a quartz sublimation tower to carry out vacuum sublimation on the secondary decomplexed molybdenum dichloride obtained in the step S34, and collecting sublimation condensate to obtain the electronic grade molybdenum dichloride. The final product purity of the production process is greater than or equal to 6N, and the process can be used for large-scale production.

The invention discloses a self-healing high-temperature anti-oxidation carbon-ceramic composite material, belongs to the technical field of ceramic-based composite materials, and particularly relates to a method for introducing a self-healing metal-element-free high-temperature anti-oxidation ceramic matrix into a carbon fiber preform. Then introducing a resin carbon matrix and a self-healing inorganic filler through two times of vacuum impregnation and high-temperature cracking, and finally preparing the SiC matrix by adopting high-temperature siliconizing. The carbon-ceramic composite material prepared by the invention does not contain metal impurities, has a self-healing function, and has a long-life anti-oxidation function in a range of 700-1000 DEG C.

The invention provides an impurity and oil removal method for a laterite-nickel ore hydrometallurgy filter stick. The impurity and oil removal method comprises the following steps: dynamically cleaning a to-be-treated filter stick by adopting a first cleaning solution so as to remove oil stains on the surface of the filter stick; the first cleaning solution comprises an alkaline reagent and a surfactant; dynamically cleaning the oil-removed filter stick by adopting a second cleaning solution so as to remove metal impurities on the surface of the filter stick; the second cleaning solution comprises an acidic reagent and fluoride. According to the method, a step-by-step strategy of oil removal and impurity removal is adopted, the alkaline reagent and the surfactant cooperate with each other, oil stains on the surface of the filter stick can be efficiently stripped, and a channel is opened for subsequent impurity removal; the acidic reagent and the fluoride cooperate with each other, nickel, cobalt, lead and other impurities on the surface of the filter stick can be efficiently removed, fluorine ions and the metal ions can form a water-soluble complex, the problem of impurity metal residues is thoroughly solved, and deep regeneration of the filter stick is achieved. The strategy is excellent in oil and impurity removal effect and regeneration performance.

The invention belongs to the field of ultra-pure smelting processes of high-performance Cr-Ni-W series high-strength steel, and particularly relates to an ultra-pure smelting method of high-performance Cr-Ni-W shaft steel and the high-performance Cr-Ni-W shaft steel. According to the method, vacuum induction melting is adopted, furnace charge is heated and melted in a magnetic induction mode, the whole melting process is completed in vacuum, and no slag participates in the metallurgy process. The smelting mode has a good effect of removing gas and non-ferrous metal impurities, and alloy elements are basically not burnt. In the vacuum consumable remelting process, inclusion particles float to the surface of a molten pool and are gradually adsorbed by the wall of a crucible under the action of an electric arc, so that the inclusion content in the alloy can be further reduced, and the purity of a cast ingot is improved; and meanwhile, reasonable cooperation of current and voltage, melting speed and cooling is adopted in the melting process, and the component and structure uniformity of Cr-Ni-W series high-strength steel finished product cast ingots is guaranteed.

The invention relates to the technical field of monocrystalline silicon raw material pretreatment, in particular to a monocrystalline silicon raw material impurity pretreatment method based on a thermal migration effect, which comprises the following steps: (1) silicon block pretreatment: ultrasonically cleaning a polycrystalline silicon block to obtain a cleaned polycrystalline silicon block; (2) in an inert gas environment, carrying out gradient heating on the cleaned polycrystalline silicon block to migrate impurities so as to obtain a heat-treated polycrystalline silicon block; (3) carrying out directional gas purging on the heat-treated polycrystalline silicon block to obtain a purged polycrystalline silicon block; and (4) cooling and post-processing: cooling the blown polycrystalline silicon block to below 100 DEG C along with the furnace, and taking out the polycrystalline silicon block. Compared with direct acid pickling, the method has the advantages that the metal impurity removal rate is increased by 30% through the specific monocrystalline silicon raw material impurity pretreatment method based on the thermal migration effect, and the method has a good application prospect.

The utility model discloses a liquid level floating ball device, which relates to the technical field of liquid level measurement, and comprises a support rod, a floating ball, a floating ball and a floating ball, the magnetic detection assembly is arranged in the mounting cavity; the floating ball is arranged on the periphery of the supporting rod in a sliding mode; and the magnet is embedded in the floating ball, and the floating ball slides along the supporting rod along with the liquid, so that the magnet is close to or far away from the magnetic detection assembly. According to the technical scheme, the mode that the magnet is embedded into the inner side of the floating ball is adopted, metal impurities in a detection medium adsorbed by the floating ball are reduced, and therefore the accuracy of the liquid level floating ball device is improved.

The invention relates to the field of hydrometallurgy, and discloses a method for converting hafnium oxalate feed liquid into hafnium oxychloride feed liquid, which is characterized by comprising the following steps: adding an HCl solution and an oxidizing agent into the hafnium oxalate feed liquid, and reacting at a certain temperature to obtain a hafnium oxychloride solution. The method has the advantages of simple operation, no introduction of any metal impurity ions, small reagent consumption, low energy consumption, low cost, high efficiency, no physical state change, and realization of continuous production. The method for adding the HCl solution and the oxidizing agent into the oxalate feed liquid is also suitable for converting oxalate solutions of other metal ions into chloride solutions, including but not limited to zirconium oxalate, titanium oxalate, thorium oxalate, scandium oxalate, niobium oxalate, tantalum oxalate, vanadium oxalate, cobalt oxalate, cesium oxalate and rubidium oxalate.

The invention discloses an internal gettering process of a heavily boron-doped czochralski silicon epitaxial wafer, which comprises the following steps: 1) carrying out high-temperature pretreatment on a heavily boron-doped czochralski silicon wafer in an inert atmosphere, including high-temperature rapid heat treatment and high-temperature common heat treatment in sequence; 2) polishing the silicon wafer to eliminate a surface damage layer; and 3) depositing a lightly doped epitaxial layer or an intrinsic epitaxial layer to prepare the epitaxial wafer. After the epitaxial wafer is subjected to device manufacturing thermal process simulation in an oxygen atmosphere, gt can be formed on the near surface of the substrate; an inner gettering area with the BMD density larger than or equal to 5 * 10 < 9 > cm <-3 > is formed in the substrate body; the clean area guarantees the crystal quality of the epitaxial layer and prevents defects from extending to the active area; the inner gettering region enhances the inner gettering capability of the device on metal impurities, and reduces leakage current. The substrate of the epitaxial wafer formed by the method can be taken from any position of the self-weight boron-doped czochralski silicon single crystal ingot, so that the process is unified, the process integration complexity is reduced, and the waste of the crystal ingot is reduced.

The invention provides a preparation method and application of a modified PVC adsorbent for gold extraction of carbonaceous gold ore, and belongs to the technical field of organic polymer materials and resource utilization. Based on construction of a hydroxylation-xanthate esterification reaction and bifunctional adsorption sites, a series of chemical modification paths of acetate nucleophilic substitution-hydrolysis-carbon disulfide alkali treatment are established, and xanthate functional groups with high reaction activity are accurately constructed on an inert PVC framework. Sulfur atoms in xanthate groups of the modified PVC are excellent electron donors and can generate strong chemical adsorption with metal impurities or polar sites on the surface of carbon, meanwhile, Van der Waals interaction between a main chain of the modified PVC and the carbon is reserved, and unmodified PVC or single hydroxylated PVC does not have the synergism of chemical adsorption and physical adsorption, so that the modified PVC can be used for preparing the carbon-modified PVC composite material, and the carbon-modified PVC composite material can be used for preparing the carbon-modified PVC composite material. And leap-type improvement of the adsorption capacity and selectivity of organic carbonaceous in minerals is realized.

The invention belongs to the technical field of chemical analysis, and discloses a method for measuring the content of metal impurities in quartz glass, which comprises the following steps: 1) adding ultra-pure hydrofluoric acid into a quartz glass sample, heating to dissolve the surface, ultrasonically cleaning the residual sample, and drying to obtain a pretreated sample; 2) respectively adding ultra-pure hydrofluoric acid into at least two pre-treated samples, heating and digesting, completely digesting the samples until the ultra-pure hydrofluoric acid is evaporated to dryness, and then adding ultra-pure nitric acid to obtain a parallel sample; at the same time, preparing at least two blank samples under the same condition; and 3) preparing a standard solution of the to-be-detected metal element with gradient concentration, determining and drawing a standard curve by adopting an inductively coupled plasma mass spectrometer, then determining a parallel sample and a blank sample, and calculating the content of the metal element in the quartz glass sample. On one hand, the sample is controlled not to be polluted in the sample preparation process, on the other hand, the sample is controlled not to be polluted in the testing process, and finally the real metal impurity content is tested.

The invention relates to the technical field of wastewater treatment, in particular to a multistage treatment device and method for metallographic laboratory wastewater. The metallographic laboratory wastewater multi-stage treatment device comprises a box body, a water inlet and a water outlet are formed in the side face of the box body, the interior of the box body is divided into a plurality of cavities through partition plates, the cavities are sequentially arranged in the direction from the water inlet to the water outlet, drain outlets are formed in the bottoms of the cavities respectively, and overflow holes used for enabling wastewater to flow downstream are formed in the partition plates; a filter screen for filtering wastewater is arranged in the overflow hole; an electromagnet is arranged in the cavity close to the water outlet and is used for being electrified to generate magnetic force so as to adsorb metal impurities in the sewage. According to the device, by optimizing the precipitation process and other auxiliary treatment measures, the removal rate of metal chippings can be remarkably increased, pipeline blockage is avoided, and environmental safety is protected.

The invention discloses a purification method of high-purity tellurium, and belongs to the technical field of non-ferrous metallurgy. The method sequentially comprises the steps of raw material ultrasonic mechanical activation, ultrasonic selective recrystallization, smelting reduction refining, vacuum rectification purification and tellurium ingot forming, and volatile impurities such as selenium and sulfur are effectively removed by oxidizing calcination of a crude tellurium raw material; then, primary separation of impurities is realized in a manner of combining alkaline dissolution and oxidation precipitation, and then repeated purification is performed through low-temperature crystallization, so that the purity of tellurium is remarkably improved; metal impurities are further removed through smelting reduction treatment under the inert atmosphere, and preliminarily purified tellurium ingots are formed; step distillation separation is carried out by utilizing vapor pressure difference between tellurium and impurities under a high vacuum condition, and a pure tellurium component is enriched; and finally, melting in an inert atmosphere, cooling and forming to obtain the high-purity tellurium ingot. The method is stable in technological process, suitable for industrial application and capable of meeting the requirements of high-end fields such as semiconductors and photoelectric materials for high-purity tellurium materials.

The utility model discloses a waste paperboard crushing and stirring device which comprises a machine body, a stirring device, a stirring device, a stirring device and a stirring device. The top of the machine body is provided with a feeding port, and the bottom of the machine body is provided with a discharging port; the crushing mechanism is arranged in the machine body, the crushing mechanism is located below the feeding opening, and the crushing mechanism is used for crushing waste paperboards; the eddy current separation mechanism is arranged below the crushing mechanism, and the eddy current separation mechanism is used for separating metal on the waste paperboards; and the stirring magnetic attraction mechanism is located below the eddy current separation mechanism, and the stirring magnetic attraction mechanism is used for stirring the crushed waste paperboards and removing iron metal on the waste paperboards, so that efficient crushing of the waste paperboards and thorough removal of metal impurities are achieved.

The utility model discloses a high-purity quartz sand screening device applied to a photovoltaic power generation system. The high-purity quartz sand screening device comprises a feeding bin cover, a vibrating screen and a discharging bin which are sequentially arranged from top to bottom. A feeding opening is formed in the feeding bin cover; a feeding hole I is formed in the top of the vibrating screen; a coarse material discharging hole and a fine material discharging hole are formed in the side wall of the vibrating screen; a feed port II is formed in the top of the discharge bin, a discharge port is formed in the bottom of the discharge bin, and a fine material discharge port of the vibrating screen is connected with the feed port II of the discharge bin; the hot air supply pipes are fixed on the inner wall of the bottom of the discharging bin, and a plurality of air holes are formed in the hot air supply pipes; the exhaust unit comprises an upper exhaust pipe and a lower exhaust pipe; the vibrating screen of the screening device can achieve particle size grading of quartz sand, the hot gas supply pipe in the discharging bin sprays high-temperature gas such as argon, metal impurities such as Fe, Al and hydroxyl-OH adsorbed on the surface of the quartz sand in the falling process of the quartz sand are removed, the purity of the quartz sand is remarkably improved, and the photovoltaic high-purity quartz sand screening device meets the strict requirements of photovoltaic high-purity quartz sand.