65 results about "Arsenide" patented technology

The invention provides a feeding control method and device for an arsenic hydride reaction kettle, equipment and a storage medium, and belongs to the technical field of arsenic hydride reaction, and the method comprises the following steps: determining an initial feeding mode of raw materials at the initial reaction stage based on the volume of the reaction kettle and an expected reaction molar ratio; the raw materials comprise zinc arsenide and dilute sulphuric acid; the desired reaction molar ratio is the desired molar ratio between zinc arsenide and dilute sulphuric acid; in response to the situation that the pressure change rate in the reaction kettle is smaller than a preset change rate value, the initial feeding mode is switched into a constant-speed feeding mode of raw materials in the middle stage of reaction; in response to the condition that the generation rate of the arsenic hydride is lower than a preset generation rate value, switching the constant-speed feeding mode into a final feeding mode of raw materials at the end of the reaction; according to the arsenic hydride reaction kettle feeding control method and device, the equipment and the storage medium provided by the invention, the feeding opportunity and the feeding speed of the reaction kettle can be accurately grasped.

The invention belongs to the technical field of hydrometallurgy, and particularly relates to a pretreatment method for enhancing peroxide to improve the leaching rate of high-sulfur-arsenic gold ore. Comprising the following steps that the high-sulfur-arsenic gold ore is ground and then prepared into ore pulp; an oxidizing agent is added into the ore pulp, oxidation pretreatment is conducted on the high-sulfur-arsenic gold ore under the catalytic action of ultraviolet light, and ore pulp activation liquid is formed; and the pH of the ore pulp activating solution is adjusted to 9-12, a gold leaching agent is added into the ore pulp complexing solution, and stirring gold leaching treatment is conducted. According to the method, efficient oxidation of sulfide and arsenide is achieved under the mild condition through the synergistic effect of photocatalysis and chemical oxidation, the leaching rate of gold is remarkably increased, compared with a conventional peroxide oxidation method for pretreatment, the leaching rate can be increased by 10%-35%, and meanwhile the agent use amount and environmental pollution are reduced.

The invention provides a method and a device for preparing high-purity arsenic by extracting arsenic-containing hazardous waste. The method comprises the following steps: S1, purifying the arsenic-containing hazardous waste to obtain crude arsenic with first purity; s2, mixing the first-purity crude arsenic, a first reducing agent and a purifying agent, and sublimating in a high-vacuum environment to obtain second-purity crude arsenic; s3, mixing the second-purity crude arsenic with a metal material, and carrying out a melting reaction under a high vacuum condition to prepare a metal arsenide; s4, reacting the metal arsenide with an acid solution to generate a gaseous arsenide; s5, performing deep purification on the gaseous arsenide through multi-stage impurity removal to obtain an electronic-grade gaseous arsenide; and S6, performing pyrolysis and condensation on the electronic-grade gaseous arsenide to obtain high-purity arsenic. According to the method, the arsenic-containing dangerous waste is utilized, so that the problem of environmental arsenic pollution in the nonferrous industry is relieved, the purity and economic value of an arsenic product are remarkably improved, and the method has huge economic value and application prospect.

The invention relates to the technical field of detection, and discloses an MCP image enhancement high-sensitivity detection system, which comprises a photoelectric cathode, which adopts a multi-quantum well structure and a surface plasma enhancement technology, is used for converting incident photons into primary electrons, and comprises a quantum well formed by gallium arsenide and gallium aluminum arsenide; a microchannel plate for amplifying primary electrons generated from the photocathode; the microchannel plate is coated with a superconducting thin film so as to reduce noise and improve electronic gain; various types of sensors include optical sensors, thermal imaging sensors, acoustic sensors, and chemical sensors. By adopting a multi-quantum well structure and a surface plasma enhanced photoelectric cathode, the spectral response and photoelectric conversion efficiency are remarkably improved, and the sensitivity and response speed of the system to non-specific wavelengths are enhanced. Meanwhile, the microchannel plate coated with the superconducting thin film effectively reduces the noise level, improves the signal definition and the image quality, and solves the high-gain limitation of a traditional system.

A light-emitting diode (LED) epitaxial structure, an LED device, and a manufacturing method of an LED epitaxial structure are provided. The LED epitaxial structure 100 includes an n-type confinement layer 20, an n-type waveguide layer 30, a light-emitting layer 40, a p-type waveguide layer 50, and a p-type confinement layer 60 that are sequentially stacked. The p-type waveguide layer 50 includes a first p-type waveguide sub-layer 51, an electron blocking layer 52, and a second p-type waveguide sub-layer 53 that are sequentially stacked, where the first p-type waveguide sub-layer 51 is disposed closer to the light-emitting layer 40 than the second p-type waveguide sub-layer 53, and the electron blocking layer 52 includes at least one oxide layer of aluminumygallium1-yarsenide (AlyGa1-yAs) 521.

The present invention provides a method for preparing an adsorbent material for treating arsenic-containing wastewater, comprising the following steps performed in sequence: step [1] forming an NH(CH2COO)2Fe(COC2H5) organic compound layer on the surface of a sponge iron substrate; step [2] introducing an octylphenol polyoxyethylene ether composite group on the surface of graphyne to perform surface modification to obtain modified graphyne; step [3] loading the obtained modified graphyne on the NH(CH2COO)2Fe(COC2H5) organic compound layer to obtain the adsorbent material. The adsorbent material prepared by the method of the present invention has excellent soluble arsenic adsorption and removal performance, wide pH range and adaptability to soluble arsenide concentration range and other properties.

The present invention provides a method for preparing a photoelectric device. In the process of preparing a photoelectric device epitaxial wafer using the preparation method, a phosphide protective layer and an arsenide capping layer lattice-matched with the ohmic contact layer are provided on the side of the ohmic contact layer facing away from the substrate. This method can effectively prevent reactant deposition particles on quartz parts and graphite parts in the epitaxial wafer cavity from falling onto the ohmic contact layer after the epitaxial wafer growth is completed. After the epitaxial wafer growth is completed, the phosphide protective layer and the arsenide capping layer are removed to obtain an ohmic contact layer with good film quality, thereby enabling the ohmic contact layer to form better ohmic contact, thereby further improving the performance of the photoelectric device and the yield of the chip.

The utility model relates to the field of denitration catalyst performance evaluation, in particular to a denitration catalyst arsenic poisoning resistance evaluation device which comprises a mixing preheater, an As2O3 steam reactor, a catalyst reactor, a flue gas analyzer and a collector, and the mixing preheater and the As2O3 steam reactor are both communicated with the front end of the catalyst reactor; the flue gas analyzer and the collector are both communicated with the tail end of the catalyst reactor. The device has high controllability, can accurately adjust and stably maintain key parameters such as arsenide concentration, temperature, humidity and the like, and can simulate complex gas components and dynamic change conditions in actual flue gas. Therefore, a more real and reliable experimental environment is provided for arsenic poisoning resistance evaluation of the catalyst, the research and development process of the efficient arsenic poisoning resistance catalyst is accelerated, and continuous progress, application and popularization of the SCR technology are promoted.

The invention provides a method for manufacturing a semiconductor device. The method comprises a step of forming at least one gallium nitride layer or at least one gallium arsenide layer of an undoped gallium nitride layer, an undoped gallium arsenide layer, an N-type gallium nitride layer, an N-type gallium arsenide layer, an active layer, a P-type gallium nitride layer and a P-type gallium arsenide layer on a silicon substrate containing germanium or a substrate on which a silicon layer containing germanium is formed, the process of forming the at least one gallium nitride layer or the at least one gallium arsenide layer includes the steps of: a) sequentially supplying i) a gallium precursor and ii) a nitrogen precursor or an arsenide precursor at 500 DEG C or less to form the gallium nitride layer or the gallium arsenide layer on the silicon substrate or the substrate; and b) exposing the gallium nitride layer or the gallium arsenide layer to a hydrogen-containing plasma wherein steps a) and b) are repeated a plurality of times.

The present invention provides a method for preparing a metal arsenide and its application; the method for preparing the metal arsenide includes: performing a melting reaction on metal arsenic and an active metal in an environment with a vacuum degree of 0.001~1 Pa and a temperature of 750~950 °C to obtain a reaction product; cooling the reaction product to room temperature and pulverizing it under the protection of an inert gas to obtain the metal arsenide. The present invention effectively utilizes metal arsenic resources, significantly reduces arsenic emissions in the industrial process, and promotes environmental protection; by converting low-value metal arsenic and active metals into high-value metal arsenide products, it has a wide range of applications in semiconductor materials and electronic special gases; under vacuum conditions, the present invention significantly reduces the reaction temperature by lowering the triple point of arsenic and active metal reactants, improves the reaction rate, and at the same time, the reaction conditions are easy to control and the operation is simple, thereby reducing the overall preparation cost.

A gallium arsenide single-crystal substrate has a main surface with a circular shape and features R1, R2, R3, R4, R5, and R6, each of which is a first integrated intensity ratio. The first integrated intensity ratio is obtained by determining a spectrum of the detection intensity of a 3d electron of arsenic with respect to a binding energy of a photoelectron emitted outwards from the gallium arsenide single-crystal substrate based on X-ray photoelectron spectroscopy, in which X-rays are applied centrally to the main surface under specific conditions. The first integrated intensity ratio is a ratio of an integrated intensity of an arsenic element present as diarsene pentoxide to the sum of the integrated intensity of the arsenic element present as diarsene pentoxide and the integrated intensity of an arsenic element present as arsenic trioxide.an integrated intensity of an arsenic element present as gallium arsenide and an integrated intensity of an arsenic element present as metallarsene, and wherein R2 and / or R3 and / or R4 is the largest among R1, R2, R3, R4, R5 and R6.

The invention provides a method for determining a trace As component in InGaAsP, and relates to the technical field of semiconductor manufacturing. The method comprises the following steps: aiming at a plurality of different y values, growing a corresponding InGaAsyP1-y epitaxial layer on a substrate to obtain a plurality of epitaxial samples; a preset corrosion solution is adopted, the corrosion rate corresponding to each y is obtained, data fitting is carried out, and the corresponding relation between the corrosion rate and the y is obtained; for an InGaAsy0P1-y0 epitaxial layer sample with the thickness smaller than 40 nm and the component y0 smaller than 0.02 on the arsenide epitaxial layer, the corrosion rate is determined, and the component y0 is determined according to the corresponding relation. According to the method, the corresponding relation between the corrosion rate and the As component is established, the component y0 of the thin layer InGaAsy0P1-y0 epitaxial layer can be determined according to the corresponding relation only by measuring the corrosion rate of the thin layer InGaAsy0P1-y0 epitaxial layer, and quantitative testing of the trace As component in the thin layer epitaxial layer is achieved.

The utility model discloses a comprehensive railway signal cable, which has stable conductivity and shielding property, reliable impact resistance, corrosion resistance, wear resistance and heat insulation property, and is suitable for relatively severe environments of railway laying. The cable comprises a cable core part which is formed by twisting at least four single wires, each single wire comprises a metal inner core and an outer sheath layer, and the metal inner core is made of niobium arsenide materials; the protective layers are arranged on the periphery; the cable core part is located in a central cavity formed by combining the plurality of protective layers, and the plurality of protective layers are a PET belt wrapping layer, a metal shielding layer, an inner protective layer, an isolating layer, a protective layer and a wear-resistant outer protective layer in sequence from inside to outside; the PET belt wrapping layer wraps the equivalent outer circumference of the cable core part, the periphery of the PET belt wrapping layer is wrapped with a metal shielding layer, the periphery of the metal shielding layer is wrapped with an inner protection layer, the periphery of the inner protection layer is wrapped with an isolation layer, the periphery of the isolation layer is wrapped with a protection layer, and the periphery of the isolation layer is wrapped with a wear-resistant outer protection layer.

The invention provides a solar cell and a manufacturing method thereof. The solar cell comprises a substrate; the epitaxial structure is arranged on the surface of one side of the substrate; the ohmic contact layer is arranged on the surface, deviating from the substrate, of the epitaxial structure; the grid line electrode is in contact with the ohmic contact layer; the back electrode is arranged on the surface of one side, deviating from the epitaxial structure, of the substrate; wherein the ohmic contact layer comprises a composite stacked structure formed by a phosphide layer and an arsenide layer. Through the arrangement, the conduction band bottom of the phosphide layer is higher than the arsenide layer, and an electron barrier (delta Ec) is formed at the interface of the phosphide layer and the arsenide layer; heavy doping is carried out on the ohmic contact layer, so that a Schottky barrier between the grid line electrode and the phosphide layer and a heterojunction barrier (delta Ec) between the phosphide layer and the arsenide layer become thin barriers capable of being tunneled by electrons due to narrowing of a depletion region, and overall low-resistance ohmic contact is achieved.

This application belongs to the field of saturable absorber technology, and particularly relates to a saturable absorber based on tantalum arsenide quantum dots, its preparation method, and a mode-locked fiber laser. The saturable absorber provided by this application includes a tapered optical fiber and tantalum arsenide quantum dots loaded thereon. The tantalum arsenide quantum dots have excellent nonlinear optical properties and saturation intensity, so when the laser passes through the tantalum arsenide quantum dots on the saturable absorber, the laser reaches saturation quickly, enabling the output of ultrafast laser with a repetition frequency and stable laser mode-locked signal, thereby solving the technical problem of low performance of saturable absorbers based on two-dimensional materials in the prior art.

A process for producing semiconductor structures comprising one of more layers of Group III / IV Compounds deposited onto a template using PVD sputtering the resulting semiconductor structures is provided according to the invention. The Group III or Group IV material may be gallium, hafnium, indium, aluminum, silicon, germanium, magnesium and / or zirconium. The anion provided by a reactive gas may be nitride, oxide, arsenide, or phosphide. The flow of the reactive gas to the vacuum chamber used to react with the sputtered Group III or Group IV target material for produce the Group III / IV Compound layer onto the template is modulated during a duty cycle during the PVD sputtering process between a target-rich condition and a reactive gas-rich condition to enhance the efficiency of the PVD sputtering process and improve the crystallinity of the Group III / IV Compound layer within the resulting semiconductor structure.

According to the present invention there is provided use of a lead electrode in a method for removing one or more impurities from a copper refinery electrolyte. Preferably, the method is a single-stage electrolyte purification / liberation (EPP) method. More preferably, the one or more impurities comprise arsenic. Also provided is a lead cathode, per se, for use in such a method. Preferably, the method comprises the steps of: providing an electrolyte having a concentration of arsenic that is sufficiently elevated as to affect the purity of the final copper cathode product; providing a cell adapted for performing a single- stage electrolyte purification / liberation (EPP) method; providing to the EPP cell a cathode comprised of about 90 to about 100 wt.% lead; performing the EPP method for a predetermined period, thereby to effect a copper / arsenic reduction step; and obtaining the resultant cupric arsenide deposit in a sludge layer at the bottom of the EPP cell.

The invention belongs to the technical field of semiconductor technology, and discloses a three-waveband image sensor and a manufacturing method thereof, the image sensor comprises a substrate layer, a silicon oxide layer, an aluminum oxide layer, a first electrode layer, an ultraviolet light sensing layer, a visible light sensing layer, an infrared light sensing layer, a second electrode layer and a passivation layer which are stacked in sequence; a plurality of rectangular grooves which have the same shape and are distributed at preset intervals penetrate through the second electrode layer, the infrared light sensing layer, the visible light sensing layer and the ultraviolet light sensing layer in sequence; the ultraviolet light sensing layer is made of an intrinsic aluminum arsenide material; the visible light sensing layer is made of an intrinsic gallium arsenide material; the infrared light sensing layer is made of germanium materials which are obliquely cut by 6 degrees in intrinsic mode. The passivation layer uniformly covers the second electrode layer and the inner wall of each rectangular groove; according to the invention, the problems of lattice mismatch and polarity mismatch among three sensing layers in the prior art can be solved, the manufacturing cost is reduced, and the method is suitable for batch production.

The invention provides arsenic hydride adsorbent mixing equipment, and relates to the technical field of adsorbent mixing devices.The arsenic hydride adsorbent mixing equipment comprises a barrel, a stirring device coaxial with the barrel is arranged in the center of the barrel, an auxiliary stirring mechanism is arranged in a gap between the stirring device and the inner wall of the barrel, and the auxiliary stirring mechanism is connected with the stirring device through a connecting rod; the stirring device can drive the auxiliary stirring mechanism to rotate when rotating in the cylinder body; according to the invention, stirring can be carried out in the gap between the stirring device and the barrel through the auxiliary stirring mechanism, damage to the inner wall of the barrel can be avoided, an adsorbent at the edge of the barrel can be fully stirred, and the mixing effect of the adsorbent in the barrel is improved.

The invention provides a semiconductor structure and an image sensor. The semiconductor structure comprises a substrate, a photodiode and a color filter element, the photodiode comprises a first photoelectric function layer, a second photoelectric function layer and a third photoelectric function layer which are sequentially stacked on the surface of a pixel area, and fourth photoelectric function layers formed on the two sides of the first photoelectric function layer. The first photoelectric functional layer is made of silicon arsenide, the second photoelectric functional layer and the fourth photoelectric functional layer are made of silicon phosphide, and the third photoelectric functional layer is made of silicon antimonide; the second photoelectric functional layer is located on the surface of one side of the first photoelectric functional layer away from the substrate; the bottom surface and the side surface, close to one side of the first photoelectric function layer, of the third photoelectric function layer are in contact with the second photoelectric function layer and are surrounded by the second photoelectric function layer. According to the semiconductor structure, a potential energy well and an efficient electron transport channel can be formed in the photodiode, so that more photoelectrons are generated, and the photoelectric conversion efficiency is improved.

The present invention provides a method for preparing gaseous arsenide from metal arsenide, comprising the steps of: S1, mixing crude arsenic with a first reducing agent to obtain a mixed arsenic material; placing the mixed arsenic material at the hot end of a closed first vacuum environment for sublimation, collecting condensate at the cold end of the first vacuum environment to obtain elemental arsenic; mixing elemental arsenic with an active metal material to obtain an arsenic metal mixture; placing the arsenic metal mixture in a second vacuum environment for melting reaction to obtain metal arsenide; S2, mixing the metal arsenide with sulfuric acid in a third vacuum environment, and maintaining the temperature of sulfuric acid in the environment at 20-40°C, and obtaining gaseous arsenide through a gas production reaction. The present invention utilizes a triple vacuum environment to achieve the preparation of high-purity gaseous arsenide, and can efficiently achieve industrial production.

Growth structure (1) for a radiation-emitting semiconductor component (10) comprising - a semiconductor substrate (2) which - contains a material based on arsenide compound semiconductors, - a buffer structure (3) which - is arranged on the semiconductor substrate (2), - contains a material based on arsenide compound semiconductors and - a buffer layer (4) with at least one n-doped layer (5), wherein - the n-doped layer (5) contains a material based on arsenide compound semiconductors and oxygen and a molar fraction of oxygen in the n-doped layer (5) is between 10 15 cm -3 and 10 19 cm -3 amounts, - the buffer structure (3) has at least one further buffer layer (8, 9) which contains a material based on arsenide compound semiconductors, is n-doped and contains oxygen, - the further buffer layer (8, 9) serves as an etching stop layer when the semiconductor substrate (2) or the growth structure (1) is detached from a luminescence diode structure (11), and - one of the at least two buffer layers (4, 8, 9) is a bulk layer and the other of the at least two buffer layers (4, 8, 9) consists of a superlattice having a plurality of n-doped, oxygen-free layers (6) and a plurality of n-doped, oxygen-containing layers (5) arranged alternately.

The invention belongs to the technical field of mineral processing engineering, and particularly relates to a composite binder for iron oxide ore pellets and a pellet preparation and arsenic removal method thereof. Calcium carbonate-ammonium bicarbonate serves as a composite binder, efficient arsenic removal is achieved through the unique action mechanism of ammonium bicarbonate, iron oxide ore powder and a composite binder solution are mixed and pelletized to obtain green pellets, the green pellets are cured for 5-8 h at the temperature of 20-30 DEG C and the humidity of 60-80%, dried for 3-4 h at the temperature of 100 + / -5 DEG C and roasted for 2-4 h at the temperature of 600-800 DEG C; ammonium bicarbonate is decomposed during roasting to generate NHH, the NHH reacts with arsenide in the pellets to generate volatile arsenic ammonia compounds, arsenic removal is completed along with gas escape, and meanwhile calcium carbonate provides framework support for the pellets to guarantee strength. The arsenic removal rate reaches 85% or above, the arsenic content of the pellets is reduced to 0.02% or below, the compressive strength of dry pellets is larger than or equal to 2000 N / pellet, the roasting temperature is reduced by 30% or above compared with a traditional technology, low-energy-consumption and high-purity clean utilization of iron oxide ore resources is achieved, the technological process is short, and the method is suitable for industrial application.

The invention discloses a process method for deeply removing copper from crude lead by using dangerous solid wastes, and belongs to the technical field of non-ferrous metal metallurgy and resource utilization of the dangerous solid wastes. Dangerous solid waste containing arsenic and sulfur serves as a copper removal agent and is added into molten lead bullion, stirring and smelting are conducted at the temperature of 450-900 DEG C, copper reacts with arsenic and sulfur to generate cuprous sulfide, copper arsenide and other compounds insoluble in lead liquid by means of the preferential affinity of arsenic and sulfur to copper, the compounds float upwards to form a low-density arsenic matte scum layer, and efficient separation of copper is achieved through mechanical slag scattering. The copper content in the lead liquid after copper removal can be reduced to 0.1% or below, and meanwhile harmless treatment of dangerous solid waste and resource recycling of valuable elements are achieved. The method is simple in process, low in cost and high in copper removal efficiency, and has remarkable environmental benefits and economic benefits.

The present invention relates to a treatment system and method for reducing and solidifying the resource recycling of electrolytic aluminum slag leachate. The treatment system of the present invention mainly comprises: a pre-precipitation tank (1), a regulating tank (2), an aluminum hydroxide reaction precipitation tank (3), a primary defluorination coagulation precipitation tank (4), a precision filter 1 (5), an activated aluminum oxide precision defluorination device (6), a two-stage oxidation cyanide breaking reaction tank (7), an oxidation arsenic removal reaction tank (8), a precision filter 2 (9), an ultrafiltration membrane clarification device (10), a resin weight removal device (11), a membrane concentration system (12), a deammonification tower (13), and an evaporation concentration crystallization device (14). The treatment method of the present invention can effectively realize resource recycling, convert ammonia nitrogen into ammonia water resources, and prevent arsenide, fluoride and chloride salt from leaving the factory, thereby reducing the amount of solid waste generated, avoiding the problem of hazardous waste management and transportation, and having lower operating costs. The economic benefits and comprehensive operating costs of aluminum and ammonia nitrogen generated are much lower than those of traditional processes, truly "making pollution control effective and profitable".

The invention relates to a method for efficiently recovering arsenic from lead anode slime based on hydrometallurgy, and belongs to the technical field of metallurgical engineering. The method comprises the following steps: a) carrying out wet ball milling on the lead anode slime to 200-400 meshes; b) performing oxidation pretreatment in an oxygen atmosphere at the temperature of 150-200 DEG C for 2-4 hours; c) leaching with a 0.2-0.4 mol / L sulfuric acid solution, controlling the liquid-solid ratio to be (8-10): 1, and controlling the temperature to be 60-80 DEG C; d) introducing SO2 generated by a fluidized bed furnace into the leachate until the pH value is 0.5-1.5, and carrying out reduction to separate out As2O3; and e) mixing As2O3 with carbon powder, and carrying out gradient heating reduction in an inert atmosphere to obtain arsenic, wherein the gradient heating reduction process comprises two stages of 280-310 DEG C low-temperature deoxidation and 580-630 DEG C high-temperature reduction. According to the invention, the arsenide is fully converted into a soluble high valence state through the synergistic effect of ultrafine grinding and oxygen-controlled oxidation; high-temperature SO2 gas generated by a fluidized bed furnace is adopted as a reducing agent, and As (V)-As (III) efficient reduction is achieved; and finally, through segmented control of low-temperature deoxidation and high-temperature reduction, the arsenic purity can be improved from 99% to 99.9% or above.

The present invention provides a method and device for extracting and preparing high-purity arsenic from arsenic-containing hazardous waste. The method comprises the following steps: S1, purifying the arsenic-containing hazardous waste to obtain crude arsenic of the first purity; S2, mixing the crude arsenic of the first purity, a first reducing agent and a purifying agent, and performing sublimation in a high-vacuum environment to obtain crude arsenic of the second purity; S3, mixing the crude arsenic of the second purity with a metal material and performing a melting reaction under high-vacuum conditions to prepare a metal arsenide; S4, reacting the metal arsenide with an acid solution to generate a gaseous arsenide; S5, performing deep purification on the gaseous arsenide through multi-stage impurity removal to obtain an electronic-grade gaseous arsenide; S6, pyrolyzing and condensing the electronic-grade gaseous arsenide to obtain high-purity arsenic. This method utilizes arsenic-containing hazardous waste, not only reducing the environmental arsenic pollution problem in the non-ferrous industry, but also significantly improving the purity and economic value of arsenic products, having great economic value and application prospects.

The invention relates to a method for deeply removing arsenic from high-purity antimony, and belongs to the technical field of metallurgical engineering. According to the method, tin serves as a trapping agent under the vacuum condition, tin and arsenic preferentially form a stable tin arsenide compound, and high-selectivity separation of antimony and arsenic is achieved; the method specifically comprises the following steps: (1) preparing and mixing raw materials; (2) vacuum distillation reaction: placing the high-temperature-resistant container in a vacuum furnace, and starting a vacuum system to reduce the pressure in the furnace to 10 Pa or below; heating the furnace to a reaction temperature of 580-630 DEG C at a heating rate of 8-15 DEG C / min, and keeping the temperature for 30-120 minutes at the temperature; and (3) separating the product to obtain an antimony product subjected to deep arsenic removal. According to the method, traditional physical separation (vacuum distillation) and chemical reaction (alloying) are successfully combined, and the dynamic bottleneck existing in a single physical method is overcome. By forming volatile tin arsenide, the migration path and the existence form of arsenic are ingeniously changed, so that high-selectivity and high-efficiency removal of low-content arsenic is realized.

The invention discloses a preparation method of a room-temperature medium-wave infrared retina detector and intelligent sensing calculation application of the room-temperature medium-wave infrared retina detector. The detector comprises a semiconductor epitaxial wafer, and the semiconductor epitaxial wafer is of an nBn laminated barrier type structure and comprises an indium arsenide absorption layer, an arsenic antimony aluminide barrier layer and an indium arsenide contact layer which are sequentially deposited on an indium arsenide substrate; the semiconductor epitaxial wafer is etched into a plurality of photosensitive element arrays through ICP (Inductively Coupled Plasma); the photosensitive element array comprises a deposition passivation protection layer, a metal contact layer, a plurality of top electrodes and bottom electrodes which are parallel to each other, and a plurality of common electrodes. The room-temperature medium-wave infrared retina detector array is prepared by using an indium-arsenic barrier type structure, room-temperature reconfigurable positive and negative linear light response is realized on a short medium-wave infrared band of 2-3.5 microns, and the positive and negative light response rates are both higher than + / -0.1 A / W; and the rear end can be combined with the memristor to realize sensing calculation and classification work.

Embodiments of the present disclosure relate to methods for forming a source / drain extension. In one embodiment, a method for forming an nMOS device includes forming a gate electrode and a gate spacer over a first portion of a semiconductor fin, removing a second portion of the semiconductor fin to expose a side wall and a bottom, forming a silicon arsenide (Si:As) layer on the side wall and the bottom, and forming a source / drain region on the Si:As layer. During the deposition of the Si:As layer and the formation of the source / drain region, the arsenic dopant diffuses from the Si:As layer into a third portion of the semiconductor fin located below the gate spacer, and the third portion becomes a doped source / drain extension region. By utilizing the Si:As layer, the doping of the source / drain extension region is controlled, leading to reduced contact resistance while reducing dopants diffusing into the channel region.