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Bridge type nano grating tunable vertical cavity surface emitting laser and preparation method thereof

A technology of vertical cavity surface emission and nano-grating, which is applied in the direction of lasers, laser components, semiconductor lasers, etc., can solve the problems of increasing the bit error rate of optical transmission, expand physical functions and application fields, increase scattering, and facilitate dynamic Effect of single transverse mode and single polarization output

Inactive Publication Date: 2011-04-13
BEIJING UNIV OF TECH
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  • Claims
  • Application Information

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Problems solved by technology

Polarization instability will have adverse effects on some polarization-sensitive applications, such as increasing the bit error rate of optical transmission

Method used

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  • Bridge type nano grating tunable vertical cavity surface emitting laser and preparation method thereof
  • Bridge type nano grating tunable vertical cavity surface emitting laser and preparation method thereof
  • Bridge type nano grating tunable vertical cavity surface emitting laser and preparation method thereof

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Embodiment Construction

[0034] Specific embodiments of the present invention are described below in conjunction with accompanying drawing:

[0035] The present invention is based on micro-machining technology, introduces nano-grating and sacrificial layer technology, and manufactures a bridge-nano-grating wavelength-tunable vertical cavity surface-emitting laser device, that is, adopts a micro-machining method to prepare a movable distribution with mechanical properties and surface nano-grating The Bragg reflector is fed back to replace the original fixed DBR structure reflector. The thickness of the air gap between the movable cantilever beam DBR reflector and the center of the active area is manipulated by electrostatic force, and after a bias voltage is applied between the reflector and the p-type electrode, the movable reflector is activated by the generated electrostatic force Moving down, the air gap is reduced, and the resonance wavelength is blue-shifted. After the voltage is turned off, unde...

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Abstract

The invention relates to a surface nano grating-based wavelength tunable vertical cavity surface emitting laser and a preparation method, which belong to the field of semiconductor photoelectronic devices. The laser has an inner cavity contact laminated structure; a positive electrode layer (1) is arranged on a P-type ohmic contact layer (5); an air-gap layer (12), a gallium arsenide layer (2a), and a gallium aluminum arsenide layer (2b) are arranged above the ohmic contact layer (5) in turn; a gallium aluminum arsenide oxidation current limitation layer (6), an active region (7), an n-type gallium aluminum arsenide layer (8a), an n-type gallium arsenide (8b), an n-type gallium arsenide substrate (10), and a substrate electrode layer (11) are formed below the ohmic contact layer (5) in turn; and a nano grating (15) is positioned on the surface of the gallium arsenide layer (2a). The thickness of the air-gas layer can be subjected to mechanical adjustment of an electrostatic force and the like, so that photon phase change can be transmitted in the resonant cavity of a laser and an outputted light beam passes through the nano grating (15) immediately; therefore, a wavelength and polarization can be simultaneously controlled.

Description

technical field [0001] The bridge-nano grating wavelength-tunable vertical cavity surface-emitting laser structure and device belong to the field of semiconductor optoelectronic devices, and relate to a preparation structure and technology of a wavelength-tunable and polarization-controllable surface-emitting laser. Background technique [0002] Vertical cavity surface emitting laser (VCSEL) has become an important light source in the field of short-distance optical communication due to the advantages of low threshold current, single longitudinal mode lasing, easy coupling with optical fiber, and easy integration. But due to its symmetric structure of the cavity and the weak anisotropy of the active region, the output light does not have a stable polarization state. For a standard device fabricated along the [100] direction of a GaAs substrate, there are two mutually perpendicular and orthogonal polarization ground states, and the electric vector directions are along the [11...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183H01S5/187H01S5/068H01S5/343
Inventor 关宝璐郭霞任秀娟李硕李川川郝聪霞
Owner BEIJING UNIV OF TECH
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