1246 results about "Gallium arsenide" patented technology

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repeatably produced. Forming a corrugated substrate prior to actual device formation allows the ridges on the corrugated substrate to be created using high precision techniques that are not ordinarily suitable for device production. MOSFETs that subsequently incorporate the high-precision ridges into their channel regions will typically exhibit much more precise and less variable performance than similar MOSFETs formed using optical lithography-based techniques that cannot provide the same degree of patterning accuracy. Additional performance enhancement techniques such as pulse-shaped doping, “wrapped” gates, epitaxially grown conductive regions, epitaxially grown high mobility semiconductor materials (e.g. silicon-germanium, germanium, gallium arsenide, etc.), high-permittivity ridge isolation material, and narrowed base regions can be used in conjunction with the segmented channel regions to further enhance device performance.

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repeatably produced. Forming a corrugated substrate prior to actual device formation allows the ridges on the corrugated substrate to be created using high precision techniques that are not ordinarily suitable for device production. MOSFETs that subsequently incorporate the high-precision ridges into their channel regions will typically exhibit much more precise and less variable performance than similar MOSFETs formed using optical lithography-based techniques that cannot provide the same degree of patterning accuracy. Additional performance enhancement techniques such as pulse-shaped doping, “wrapped” gates, epitaxially grown conductive regions, epitaxially grown high mobility semiconductor materials (e.g. silicon-germanium, germanium, gallium arsenide, etc.), high-permittivity ridge isolation material, and narrowed base regions can be used in conjunction with the segmented channel regions to further enhance device performance.

The present invention relates to using a trap-rich layer, such as a polycrystalline Silicon layer, over a semiconductor substrate to substantially immobilize a surface conduction layer at the surface of the semiconductor substrate at radio frequency (RF) frequencies. The trap-rich layer may have a high density of traps that trap carriers from the surface conduction layer. The average release time from the traps may be longer than the period of any present RF signals, thereby effectively immobilizing the surface conduction layer, which may substantially prevent capacitance and inductance changes due to the RF signals. Therefore, harmonic distortion of the RF signals may be significantly reduced or eliminated. The semiconductor substrate may be a Silicon substrate, a Gallium Arsenide substrate, or another substrate.

A method of fabricating substrates, e.g., bulk wafers, silicon on insulator wafers, silicon on saphire, optoelectronic substrates. The method includes providing a substrate (e.g., silicon, gallium arsenide, gallium nitride, quartz). The substrate has a film characterized by a non-uniform surface, which includes a plurality of defects. At least some of the defects are of a size ranging from about 100 Angstroms and greater. The method also includes applying a combination of a deposition species for deposition of a deposition material and an etching species for etching etchable material. The combination of the deposition species and the etching species contact the non-uniform surface in a thermal setting to reduce a level of non-uniformity of the non-uniform surface by filling a portion of the defects to smooth the film of material. The smoothed film of material is substantially free from the defects and is characterized by a surface roughness of a predetermined value.

A swept source Optical coherence tomography system (SSOCT) comprises a vertical cavity surface-emitting laser with an integrated MEMs tunable mirror movable by electro-static deflection. The MEMs tunable VCSEL offers scan rates greater than 100 khz and tuning ranges approaching 200 nm around 1300 nm and 150 nm around 850 nm. In the preferred embodiment of this invention, a bottom mirror of the VCSEL is comprised of a Aluminum Gallium Arsenide/Aluminum Oxide DBR stack, and a movable top mirror is comprised of a TiO2/SiO2 DBR stack. A MEMs tunable VCSEL at 1300 nm is preferably pumped through the top mirror in a wavelength range between 1050 and 1120 nm, and a MEMs tunable VCSEL at 850 nm is preferably pumped through the top mirror in a wavelength range between 700 nm and 730 nm.

The present invention relates to a method and device for integrating solar cell on LCD panels for photovoltaic electricity generation for portable electronic devices. According to one embodiment of the present invention, the black matrix region on the color filter substrate in a LCD panel is replaced by a solar cell region. A lens array substrate is coupled between the light source layer and the TFT to focus the backlight to increase the solar cell layer area while maintaining high fill ratio of the LCD pixels. The solar cell material is selected from at least silicon, a single crystal silicon, poly-crystalline silicon, amorphous silicon, gallium arsenide, cadmium telluride, copper indium diselenide, organic/inorganic, or hybrid cells. The substrate material is selected from glass, metal, plastic or polymer.

The invention relates to a wireless-receiving system for detecting microelectronic mechanical microwave frequency and a preparation method thereof. The wireless-receiving system for detecting the microelectronic mechanical microwave frequency has quite simple structure, large measurement magnitude range, no direct-current power consumption and easy integration. In the system for detecting the microelectronic mechanical microwave frequency, gallium arsenide is used as a substrate, wherein a microwave antenna (A), a one-three power splitter (B), a coplanar waveguide transmission line (C), a two-in-one power combiner (D), an MEMS cantilever capacitive microwave power sensor (E) and an MEMS thermoelectric microwave power sensor (F) are designed on the substrate; and then a phase difference between a signal 3 and a signal 2 after the signal 3 passes through the coplanar waveguide transmission line with the length of lambda/2 can be determined according to a law of cosines. Because the phase difference corresponds to the frequency of the signal, the frequency of the signal can be measured.

this invention relates to power in direct-current circuits. The invention takes gallium arsenide as foundation (1). On the foundation has power divider, power synthesizer, 90deg phaser, solid beam structure. Power divider and power synthesizer composed by port one (7), port two(8), port three(8), dissymmetry coplane band line(10), nitride tantalum electric resistance. Solid beam structure includes signal input port(16), pier(5), solid beam(13), pedestal structure(6), sensing electrode(4), sensing electrode leader(12), capacitance detecting port(15), air bridge(14). There are nitriding silicon medium layer on the transmission line, pedestal structure and sensing electrode under solid beam, and sensing electrode leader under Air Bridge.

The invention discloses a microwave power detection system based on parallel-connected MEMS (micro-electromechanical system) cantilever beams and a preparation method of the microwave power detection system. The method is used for on-line measurement, electrostatic force can be generated between each MEMS cantilever beam and a transmission line in a center signal line transmission process, the cantilever beams are pulled downwards, and an interval between each cantilever beam and a corresponding test electrode becomes smaller, so that capacitance values are changed and microwave power in one-to-one correspondence with the capacitance values is obtained by measuring the changed capacitance values. The microwave power detection system based on the parallel-connected MEMS cantilever beams comprises a gallium arsenide substrate, wherein a plane-waveguide center signal line (A), a parallel-connected MEMS cantilever beam structure (B) and a capacitance type microwave power sensor (C) are arranged on the substrate. When a microwave signal is transmitted on the plane-waveguide center signal line, the two parallel-connected MEMS cantilever beams generate displacement under the action of the electrostatic force, and the to-be-measured power is detected by the capacitance type microwave power sensor.

There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging and a contact area disposed at least partially outside the chamber. The contact area is electrically isolated from nearby electrically conducting regions by way of dielectric isolation trench that is disposed around the contact area. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.

Described is a Schottky diode using semi-conducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse-bias breakdown voltages of greater than −15 V. In order to decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases, these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) comparable to that of the state-of-the-art gallium arsenide sold-state Schottky diodes, in the range of 10-13 W/square-root (√) Hz.

The invention discloses an MEMS (Micro Electronic Mechanical System) cantilever beam type online microwave power sensor and a production method thereof. The microwave power sensor comprises a gallium arsenide substrate, a mainline CPW (Co-Planer Waveguide), a subline CPW, an MEMS cantilever beam type structure and a terminal microwave power monitoring system, wherein the MEMS cantilever beam type structure comprises a cantilever beam and an anchor area; the cantilever beam stretches across the mainline CPW signal line, and the fixed end of the cantilever beam is fixed on the anchor area; the anchor area is connected with the terminal microwave power monitoring system through the subline CPW signal line; and a drive electrode is arranged below the cantilever beam type structure. The MEMS cantilever beam type online microwave power sensor not only has the advantages of the terminal type microwave power sensor, such as low loss and high sensitivity, but also has the advantages of online microwave power measurement, realization of monitoring and not monitoring, integration of the online microwave power sensors with various kinds of coupling factors, and compatibility with the gallium arsenide monolithic microwave integrated circuit.

Single-die or multi-die packaged modules that incorporate three-dimensional integration of active devices with discrete passive devices to create a package structure that allows active devices (such as, silicon or gallium-arsenide devices) to share the same footprint area as an array of passive surface mount components. In one example, a module includes at least one active device stacked on top of an array of passive surface mount components on a substrate. A conductive or non-conductive adhesive can be used to adhere the active device to the array of passive devices.

The present invention is a wide band GaAs microwave monolithic integrated circuit (MMIC) transmit chip that is capable of transmitting linearly or circularly polarized signals when connected to a pair of orthogonal cross-polarized antennas. In an active phased-array antenna environment, this transmit chip is capable of transmitting signals with different scan angles. This invention also contains a digital serial to parallel converter that uses TTL signal to control the phase shifter and attenuator circuits that are required for controlling the polarization and scan angle of the transmitted signal.

Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.

Switchmode DC—DC power converters using one or more non-Silicon-based switching transistors and a Silicon-based (e.g. CMOS) controller are disclosed. The non-Silicon-based switching transistors may comprise, but are not necessarily limited to, III-V compound semiconductor devices such as gallium arsenide (GaAs) metal-semiconductor field effect transistors (MESFETS) or heterostructure FETs such as high electron mobility transistors (HEMTs). According to an embodiment of the invention, the low figure of merit (FoM), τ_FET, of the non-Silicon-based switching transistors allows the converters of the present invention to be employed in envelope tracking amplifier circuits of wireless devices designed for high-bandwidth technologies such as, for example, EDGE and UMTS, thereby improving the efficiency and battery saving capabilities of the wireless devices.