153 results about "Figure of merit" patented technology

To create high-performance metasurface devices (110) in an inverse design process over a large design space (100), a deep neural network may be used as a surrogate model in lieu of a full physics simulation to more efficiently predict figures of merit for given input metasurface topologies during the iterative topology optimization. The neural network may also serve to efficiently compute, via backpropagation, gradients of the figures of merit with respect to design parameters, as are used to update the topology in each iteration.

The invention discloses a multi-parameter optimization method and system for a curved surface acoustic wave device. The method comprises the following steps: constructing theoretical models of the surface acoustic wave device under different strain conditions; solving the coupling wave equation to obtain the propagation velocity of the surface acoustic wave in the piezoelectric material under different strain conditions; acquiring at least one structural parameter of the curved surface acoustic wave device associated with the propagation speed; and performing global optimization on the at least one structure parameter according to a preset global topological optimization network to obtain a target structure parameter corresponding to the at least one structure parameter. A global topological optimization network is adopted, gradient back propagation is utilized, structural parameters of a device are intelligently designed, a quality factor value of the device is generated through finite element simulation calculation, and finally the quality factor distribution condition of the generated device is output. The problem that accurate real-time measurement of multiple parameters of the bent surface of the bearing cannot be achieved in the prior art can be solved.

The invention relates to the technical field of data processing, in particular to a data enhancement prediction method for the thermoelastic quality factor of a micro-hemispherical resonator, which comprises the following steps: S1, determining the radius size of the manufactured micro-hemispherical resonator, determining the simulation value range of the radius and thickness of an anchor point of the resonator, and determining the simulation value range of the thickness of the resonator; harmonic oscillators with different geometric boundary dimensions are established through high-temperature blow molding simulation; s2, thermodynamic simulation is carried out on the harmonic oscillator appearance obtained through blow molding simulation, and a harmonic oscillator thermoelastic quality factor data set is established; s3, performing data enhancement on the thermoelastic quality factor data set by adopting a cubic polynomial fitting method; and S4, training the enhanced thermoelastic quality factor data set by using a deep learning model to obtain a harmonic oscillator thermoelastic quality factor prediction model. According to the method, the bottleneck of scarcity of high-precision simulation data is broken through, unification of high precision and high efficiency is realized, the robustness and reliability of a prediction model are improved, and the method has wide engineering applicability and popularization value.

The invention belongs to the technical field of LLC resonant converters, and provides an efficiency optimization method of a wide-range LLC resonant converter. The method comprises the following steps: firstly, obtaining a full-bridge LLC resonant converter topology and a working area; secondly, establishing a full-time-domain equation of the full-bridge LLC resonant converter topology in an inductive low-gain output working area, and setting boundary conditions of the full-time-domain equation; then, on the basis of boundary conditions, switching tube turn-off current is calculated, and the switching tube turn-off current is combined with switching tube switching frequency to be represented as switching tube turn-off loss characteristic quantity related to the inductance coefficient, the quality factor and the normalized frequency; then, carrying out characteristic analysis on the turn-off current of the switching tube, and setting constraint conditions; and finally, on the basis of the set constraint conditions, the optimal values of the inductance coefficient, the quality factor and the normalized frequency are calculated by combining a differential evolution algorithm, so that the turn-off loss of the switching tube is minimum. According to the invention, the transmission efficiency in a low-gain mode and a high-gain mode can be improved, and the turn-off loss of the switching tube is reduced.

The invention discloses acousto-optic chalcogenide glass with a high laser damage threshold, the chemical composition formula of the acousto-optic chalcogenide glass is GexSySez, x, y and z respectively represent the mole fractions of Ge, S and Se, x = 10-30, y = 5-40, z = 40-70, x + y + z = 100, and the microscopic network structure of the acousto-optic chalcogenide glass contains a [GeSe4] tetrahedron, a [GeSSe3] tetrahedron, a [GeS2Se2] tetrahedron, a [GeS3Se] tetrahedron, a [GeS4] tetrahedron and a Se ring. The acousto-optic chalcogenide glass provided by the invention has a relatively high laser damage threshold Fth (9.72-15.58 J / cm < 2 > at1550 / 20ns / 5kHz), a relatively low thermo-optic coefficient dn / dT and good acousto-optic characteristics and mechanical properties, is high in near-infrared band transmittance, and has a relatively high laser damage threshold while ensuring a high acousto-optic quality factor. The material can be used as a material basis for developing high-performance and high-stability infrared acousto-optic modulation devices.

The invention discloses a stepped three-band grating coupler and a reverse optimization method thereof, and belongs to the technical field of photonic devices and integration, and the reverse optimization method comprises the steps: determining a design target of the grating coupler, and defining an initial structure; defining optimization parameters including grating height and grating width according to the grating number; defining an optimization quality factor according to a design target of the grating coupler, and dynamically updating a weight coefficient of the quality factor; optimizing the width and height distribution of all gratings by using an improved direct binary search algorithm; and iterative optimization is continuously carried out until a design target is achieved, and width distribution corresponding to gratings with different heights in the optimized stepped grating structure is obtained. The problem that traditional grating diffraction has inherent wavelength dependence is effectively solved, and efficient coupling of three optical communication wavebands is achieved.

Systems, methods, and circuitries are provided for determining the likelihood that a malicious signal component is present in a UWB signal. In one example, a UWB receiver device is configured to receive a UWB signal during a ranging round; correlate the received UWB signal with a reference STS template to generate a correlation output; based on the correlation output, compute a channel quality indicator that characterizes a noise level of the channel; compute an attack-detection figure of merit (A-D FOM) based on the channel quality indicator, a block error of the received UWB signal, or a frequency error of the received UWB signal; and provide data indicative of the A-D FOM to a controller device.

An operation method includes measuring figure of merit (FoM) values for a first group of presets having different preset types, based on equalized signals output from a transmission equalizer included in an external device adjusted based on the first group, identifying a preset type of a first preset corresponding to first FoM value which is a greatest value from among the FoM values for the first group, measuring FoM values for a second group of presets having the identified preset type, based on equalized signals output from the transmission equalizer adjusted based on the second group, determining a second preset corresponding to second FoM value which is a greatest value from among the first FoM value and the FoM values for the second group, and transmitting an equalizing setup request that controls the transmission equalizer to the external device, based on the determined second preset.

The present invention relates to a high-speed, high-threshold acousto-optic modulator based on lithium niobate, belonging to the field of optoelectronics; the acousto-optic modulator comprises an acousto-optic medium, a bonding layer, a transducer and a surface electrode; the sound-transmitting surface of the acousto-optic medium is equipped with a transducer through the bonding layer, and the surface electrode is plated on the surface of the transducer; the acousto-optic medium is a lithium niobate crystal, the [100] axis of the lithium niobate crystal is perpendicular to the sound-transmitting surface of the acousto-optic medium, the [010] axis of the lithium niobate crystal is located within the sound-transmitting surface of the acousto-optic medium, and the angle between the [010] axis of the lithium niobate crystal and the incident light is 0.5°±0.3°. The present invention adopts lithium niobate crystal as the acousto-optic medium, improves the acousto-optic figure of merit of the lithium niobate crystal, and also improves the ability of the acousto-optic device to withstand high-power lasers; at the same time, the present invention also plates an anti-reflection film on the light-transmitting surface of the acousto-optic medium to improve the utilization rate of light energy by the acousto-optic device. Overall, the present invention can better meet the modulation requirements of high speed and high threshold.

Systems, methods, and devices are provided for controlling processing of ultra-wideband (UWB) secure training sequence (STS) signals based on previously received UWB STS signals. In one example, a controller device is configured to receive data derived from at least one secure training sequence (STS) confidence level figure of merit (STS CLFOM data), wherein the STS CLFOM data is based on a correlation between a UWB signal received by a first UWB receiver device and a reference STS template; and control processing of subsequently received UWB signals based on the data.

The utility model relates to an acousto-optic mode locker capable of improving working frequency and diffraction efficiency, and belongs to the field of photoelectrons. The acousto-optic mode locker comprises an acousto-optic medium which adopts a quartz crystal, the X axis of the quartz crystal serves as an ultrasonic transmission direction, the Y axis serves as a light transmission direction, and the Z axis serves as an optical axis and is perpendicular to the light transmission direction; two parallel polished surfaces are arranged in the X-axis direction of the quartz crystal, one polished surface serves as a sound transmission surface, a welding layer is arranged on the sound transmission surface, a transducer is mounted on the welding layer, and a surface electrode is arranged on the transducer; and the other polished surface is used as an ultrasonic reflecting surface. Fused quartz is replaced by the high-purity quartz crystal, and the tangential direction of the quartz crystal is optimized, so that the influence of the optical rotation of the quartz crystal on the mode-locked laser is reduced to the minimum. The sound wave attenuation coefficient of the quartz crystal is lower, and the acousto-optic merit figure is higher, so that the working frequency and diffraction efficiency of the acousto-optic mode locker can be greatly improved, and the development requirement of an ultra-short pulse laser towards a smaller size is met.

Disclosed in the present invention are an unconventional thermoelectric material and a preparation method therefor. The chemical formula of the unconventional thermoelectric material is TiFexRuyCuzSb, wherein x, y and z are respectively the molecule amount of Fe, Ru and Cu in the chemical formula, 1<x+y+z<2, and x and z are not 0. The unconventional thermoelectric material TiFexRuyCuzSb(1<x+y+z<2) provided in the present invention exhibits excellent thermoelectric performance: the Seebeck coefficient thereof exceeds 180 μV / K in a certain temperature range; the figure of merit (zT) can reach 1.2 at 875 K; and the resistivity of TiFexRuyCuzSb exhibits strict linear temperature dependence in the temperature interval of 14 K to 650 K, which breaks through the Mott-Ioffe-Regel (MIR) limit, and exhibits the bad metal transmission properties of non-quasi particles. The unique transmission properties and the high thermoelectric performance benefit from a complicated electronic structure and associated interaction inside TiFexRuyCuzSb, including spin, valence fluctuation, etc., such that TiFexRuyCuzSb can more efficiently convert heat energy into electric energy during the thermoelectric conversion process, thereby improving the energy utilization efficiency.

Disclosed are a method and apparatus for setting a semiconductor parameter. The method for setting a semiconductor parameter according to an embodiment of the present disclosure is a method performed on a computing apparatus including one or more processors and a memory storing one or more programs executed by the one or more processors, the method including acquiring electrical measurement parameters corresponding to preset semiconductor manufacturing parameters, classifying the electrical measurement parameters into a plurality of groups according to a degree of correlation, extracting a correlation axis reflecting a correlation between electrical measurement parameters belonging to a corresponding group for each classified group, and predicting a figure of merit of a semiconductor device by using data values of electrical measurement parameters belonging to the corresponding group as input based on the correlation axis of each group.

A method for optimizing one or more process parameters of an additive manufacturing process. The method includes, a. manufacturing a set of test samples (c1 . . . c1 . . . cn) on a build platform (P) of an additive manufacturing system, each test sample (c1 . . . c1 . . . cn) being monitored by at least one electromagnetic sensor for obtaining at least one optimized set of process parameters (pi,opt), and storing the at least one optimized set of process parameters (pi,opt) for subsequent use during the building process of the said at least one AM part, which is representative of a test coupon (ci,j) of a given acceptable quality factor. The at least one optimized set of process parameters (pi,opt) is obtained by carrying out the following steps: i. manufacturing at least two test coupons (c1,1 . . . ci,1 . . . cn,1) with two different sets of guess process parameters (p1,1 . . . pi,1 . . . pn,1), ii. sensing the two test coupons (c1,1 . . . ci,1 . . . cn,1) with the at least one electromagnetic sensor, iii. changing for each new coupon at least one process parameter as a function of a) the previous sets of process parameters (p1,1 . . . pi.j . . . Pn,m) for the respective built test coupons, and b) the quality factor of respective test coupons measured by the electromagnetic sensor to obtain respective new sets of process parameters (pij+1); iv. manufacturing an additional set of test coupons (ci,j) of respective test samples with the respective new set of process parameters (pi,j); v. sensing the additional set of test coupons (ci,j) with the at least one electromagnetic sensor, and vi. repeating steps iii. to v. until a predetermined geometry of each test sample (c1,m . . . ci,m . . . cn,m) is obtained. A process parameters' window yielding an acceptable quality factor for the at least one AM part is computed as a function of the sets of process parameters used for building the test coupons of respective test samples, and the quality factor of the test coupons. At least one optimized set of process parameters is selected within the process parameter window.

Methods and devices relating to volumetric meta-optic structures. A method involves computationally designing a three-dimensional refractive index profile using an adjoint-based optimization process. The process optimizes for sorting light based on wavelength or polarization at specific oblique incidence angles and accounts for source divergence using Gaussian beam simulations. A mode overlap figure of merit is employed, optionally including terms to minimize crosstalk. Fabrication constraints like material binarization and minimum feature size are handled via differentiable filters. Physical crosstalk barriers may optionally be modeled during optimization. The resulting optimized profile defines a manufacturable multi-layer structure comprising patterned dielectric materials configured to perform the target sorting function efficiently under the specified oblique angle conditions. An array of such devices, potentially comprising structurally distinct elements optimized for different angles, can be integrated with an image sensor.

Light amplification devices using coupled multi-core optical fibers have a figure of merit that temporally varies, which makes it difficult to perform performance evaluation and to build a light transmission system using the same. Accordingly, a light amplification device of the present invention comprises: a band control means that controls the wavelength band of a light carrier to generate a band control light; and a band control light amplification means that has a plurality of light amplification media through which the band control light propagates, wherein the band control light amplification means amplifies the band control light in a coupled state in which the light propagating through the plurality of light amplification media induces a crosstalk and wherein the band control means controls the wavelength band such that the band control light having propagated through the plurality of light amplification media has a reduced coherence.

Each sensor in the sensor array detects when the edge of a wafer passes by the sensor on the wafer handling component of the robot arm and sends a signal. A number (N) of detected wafer edge positions are determined. Each detected wafer edge position is a set of coordinates (x, y) in the coordinate system of the wafer handling component. For each unique set (N - 1) of the number (N) of detected wafer edge positions, an estimated wafer offset that substantially minimizes a figure of merit value is determined. The estimated wafer offset is a vector extending from the center of the coordinate system of the wafer handling component to the estimated center position of the wafer. The final wafer offset is identified as the estimated wafer offset having the smallest corresponding figure of merit value. The final wafer offset is used to center the wafer at the target workstation.

A head tracking system HTS (100, 200) and associated method and head worn assembly, configured to determine a head position and / or a head orientation of a user, the HTS comprising: one or more optical sensors (112) producing optical measurements; and one or more inertial sensors (104) producing inertial measurements; a processor configured, when the optical sensors fail to provide optical measurements to determine the head location and the head orientation of a user, to operate in a coasting mode using the inertial measurements from the one or more inertial sensors to determine the head location and the head orientation of a user, the processor configured to further: determine a figure of merit FOM (346) for coasting errors based on a combination of one or more of errors in an estimated inertial sensor bias, a random drift and noise of the inertial sensor and the inertial sensor gain and alignment errors; compare (348) the FOM with a threshold to determine whether the inertial measurements provide a valid or invalid head location and / or head orientation; and determine a subsequent operation from a plurality of possible subsequent operations of the HTS based on whether the head location and / or head orientation is valid or invalid.

The invention discloses an MEMS gravity sensor air pressure and temperature decoupling compensation method and system based on frequency response analysis. Placing the MEMS gravity sensor in a preset air pressure and temperature environment, obtaining a plurality of groups of corresponding resonant frequencies and quality factors Q, and constructing a mapping relation between the Q and the air pressure and the temperature; in the operation process of the sensor, the sum Q is measured in real time, and the variable quantity of the ambient air pressure and the temperature is obtained through inversion of the mapping relation; and introducing the variation of the ambient air pressure and the temperature into a compensation correction model, and decoupling and correcting the gravity output of the sensor. According to the method, an external sensor is not needed, inconsistency caused by space position difference is avoided, the system structure is more compact, hardware complexity and power consumption are lower, the long-term stability and measurement precision of the MEMS gravimeter in a complex environment can be remarkably improved, and miniaturization, low power consumption and array application are facilitated.

According to the MEMS resonator structure and the preparation method thereof provided by the invention, the resonator punch-through anchor point and the resonator sprite pattern are formed through a one-time photoetching process, so that registration deviation caused by multiple times of photoetching is avoided, the resonator punch-through anchor point can be ensured to be accurately positioned at a theoretical fixed node of the resonator, the consistency of the resonator is improved, and the production cost is reduced. The quality factor of the device is easier to approach the theoretical maximum value; the connection with the harmonic oscillator is realized through the first connecting part, and the characteristic size of the cross section of the resonator punch-through anchor point is set to be far smaller than the characteristic size of the harmonic oscillator, so that the influence of the resonator punch-through anchor point on the Q value of the device is greatly reduced; the resonator punch-through anchor points are formed in a heavily doped polycrystalline silicon filling mode, firm mechanical anchoring between the harmonic oscillator and the substrate is achieved, the mechanical stability and impact resistance of the MEMS resonator structure are guaranteed, meanwhile, a reliable electrical connection path is formed between the harmonic oscillator and a lower layer circuit, and the reliability of a device is improved.

This invention provides a design method for a high-order matching network applied to an ultra-wideband amplifier. It involves deriving equivalent modules for the single-port preamplifier input and output stages; determining the internal structure of the high-order matching network and the transformer coupling coefficient; analyzing and obtaining the mismatch coefficient of the high-order matching network; and transforming the calculation of the load resonator quality factor into solving the constraint conditions based on the constraints between the transformer coupling coefficient, the high-order matching network mismatch coefficient, and the load resonator quality factor. The source resonator quality factor is then obtained based on the mismatch relationship between the load resonator quality factor and the high-order matching network. Finally, the parameter values ​​of the internal components of the high-order matching network are determined, resulting in the final designed high-order matching network. Compared to existing technologies, this invention achieves impedance matching between the source and load over an ultra-wideband range and enables high-gain flatness amplification within the ultra-wideband range.

The invention relates to the technical field of intelligent display rack control, and discloses an intelligent display rack remote management and control system based on the Internet of Things, and the system comprises the steps: firstly obtaining the physical attributes and arrangement information of commodities displayed on an intelligent display rack, and constructing a commodity lattice display topology representing the periodic distribution of a medium space according to the physical attributes and arrangement information; thirdly, an electromagnetic forbidden band is calculated based on the topology, a terminal to be controlled is regarded as a dielectric structure defect in the topology, and a localization defect mode strictly existing in the frequency range of the electromagnetic forbidden band is solved; and in the execution stage, the remote control end accurately tunes the carrier center frequency of the wireless transmission signal to a frequency value corresponding to the localization defect mode, and strictly configures the transmission bandwidth according to the quality factor of the mode. And finally, electromagnetic energy of the control instruction is directionally focused and coupled to the to-be-controlled terminal by using a resonance excitation transmission mechanism of the localized defect mode, so that the communication shielding limitation of a high-density display environment is broken through.

The invention provides a method for automatically generating a pixelated resonant cavity of an oscillator based on knowledge-driven reverse design. The method comprises the following steps: determining a topological region range of VCO resonant cavity design; determining a reverse design target; a priori knowledge driving pixel matrix drawing strategy is established, pixelated inductor topological structure drawing is completed in the topological region based on the drawing strategy, and a primary pixelated inductor topological structure quality factor and a secondary pixelated inductor topological structure quality factor are calculated; according to a reverse design target, searching a Q value of a primary pixelated inductance topological structure from a binary n * n matrix assembly at a given target frequency, and meanwhile, achieving a maximized optimal solution to obtain an optimal pixel topological structure; and constructing the voltage-controlled oscillator in combination with the optimal pixel topological structure. According to the method, batch automatic simulation and optimization of the optimal resonant cavity structure can be realized, and compared with manual design, the time cost is saved, and meanwhile, the performance is further improved.

This invention relates to the field of fused silica wire drawing apparatus, and more specifically, to a multi-parameter joint feedback control method and system for drawing silica wire. This invention can jointly control the drawing speed, feeding speed and laser power of silica wire based on the diameter of the silica wire and the temperature of the heating zone, thereby achieving uniform stress distribution and diameter of the silica wire, effectively ensuring the repeatability of various parameters of the drawn silica wire, and further improving the fracture strength, quality factor and torsion balance system sensitivity of the silica wire.

The application provides a topology of a passive resonant converter based on optimization parameter calculation and a control method thereof, and the resonant conversion cavity comprises a second inductor, a first capacitor, a third inductor and a first inductor which are sequentially connected in series at two ends of a first bridge arm circuit; the second inductor is connected in parallel with a second capacitor; in a process of solving a voltage gain, when an inductance ratio and a quality factor are calculated, a resonant inductance is represented by a ratio of an inductance of the first inductor and a resonant inductance coupling coefficient introduced, and the resonant inductance coupling coefficient is equal to a quotient of the inductance of the first inductor divided by a sum of the inductance of the first inductor and an inductance of the second inductor; the application adds two resonant devices on the basis of a classical LLC resonance, and achieves the purpose of being widely applied to occasions of wide-range voltage input, light load, heavy load and wide-range voltage output; meanwhile, for the improved topology, the analysis method can avoid the factors of multiple resonant devices, is convenient to understand, and can quickly obtain the parameter values.

The invention discloses a variable line width differential inductor multi-objective optimization algorithm, and provides an efficient differential inductor design optimization scheme by constructing a substitution model based on simulation data and combining a differential evolution algorithm. According to the algorithm, fitting and weighted fusion are carried out on simulation data by adopting a gradient boosting tree and a K-proximity algorithm, and an accurate and efficient substitution model is constructed; a differential evolution algorithm is combined, multi-objective optimization is realized through a weighted objective function, key performance indexes such as an inductance value, a quality factor, a self-resonant frequency and an area are comprehensively balanced, and Latin hypercube sampling and singular value decomposition technologies are introduced to improve optimization efficiency. The method is suitable for the multi-objective optimization requirement in the design of high-frequency electronic components, especially millimeter wave inductors, the design efficiency and precision are remarkably improved, and the method has wide engineering application prospects.

The application discloses a high-order mode coupler based on a double-inhibition structure of a transmission line model and a design method, and belongs to the accelerator physics and superconducting high-frequency technical field.The method comprises the following steps: determining a superconducting cavity base mode frequency, a high-order mode frequency band and an external quality factor Qe requirement; establishing an equivalent transmission line model comprising two parallel resonance base mode inhibition structures; optimizing a transmission curve through a normalized scattering matrix theory; converting the optimized transmission line model into a three-dimensional structure and further optimizing; modeling and calculating the external quality factor Qe in combination with the superconducting cavity; performing secondary electron multiplication effect simulation analysis; performing thermal load analysis by using an iterative process; and finally completing mechanical design.The application adopts the double-inhibition structure, greatly improves the base mode inhibition bandwidth, realizes deep inhibition of the base mode without pre-tuning, significantly reduces the superconducting module integration cost, improves the assembly efficiency and reduces the operation risk.

Systems, methods, and circuitries are provided for determining the likelihood that a malicious signal component is present in a UWB signal. In one example, a UWB receiver device is configured to receive a UWB signal during a ranging round; correlate the received UWB signal with a reference STS template to generate a correlation output; based on the correlation output, compute a channel quality indicator that characterizes a noise level of the channel; compute an attack-detection figure of merit (A-D FOM) based on the channel quality indicator, a block error of the received UWB signal, or a frequency error of the received UWB signal; and provide data indicative of the A-D FOM to a controller device.

The present disclosure provides a method, apparatus, electronic device, computer-readable storage medium, and computer program product for simulating an entanglement source, relating to the field of quantum computers, and particularly to the field of quantum entanglement technology. The implementation solution is as follows: determining a first quantum state vector representation of a target entangled state to be prepared by a target entanglement source; determining a quantum state vector corresponding to the target entanglement source based on the characteristic parameters of the target entanglement source and the first quantum state vector representation; determining second coincidence probabilities of respective second coincidence terms caused by the target entanglement source during the spontaneous parametric down-conversion process after measurement based on the quantum state vector; and determining a first coincidence count of the target entanglement source under respective second coincidence terms based on the second coincidence probabilities, where the first coincidence count is used to determine the figure of merit of the quantum entangled state prepared by the target entanglement source.

The invention discloses a harmonic oscillator quality factor and nonuniformity rapid testing device. The harmonic oscillator quality factor and nonuniformity rapid testing device comprises a vacuum system, an excitation system, a harmonic oscillator, a clamping and transposition device, a laser vibration meter and a resolving module. The harmonic oscillator is excited to vibrate in a physical knocking mode; acquiring single-point displacement data of a harmonic oscillator test position by using a laser vibration meter; obtaining the inherent frequency and the frequency difference of the harmonic oscillator by adopting a frequency domain analysis method; after test data are segmented according to time, spectral analysis is carried out, the amplitude spectral density of displacement signals in different time periods is obtained, and the difference of the circumferential quality factor of the harmonic oscillator is obtained by using the amplitude spectral density change of two inherent frequency points; and finally, calculating to obtain two quality factors. According to the method, the purpose of accurately identifying the quality factor and the non-uniformity of the harmonic oscillator through single test is achieved, the method has the advantages of being high in test speed, low in requirement for the number of test devices, high in test precision, good in practicability and the like, and the test efficiency of the quality factor and the non-uniformity of the harmonic oscillator is greatly improved.