157 results about "Spin current" patented technology

The present disclosure generally relates to a magnetic recording head comprising a read head. The read head comprises a first sensor disposed at a media facing surface (MFS) comprising at least one free layer, a second sensor disposed at the MFS comprising at least one free layer, a first spin generator spaced from the first sensor and recessed from the MFS, and a second spin generator spaced from the second sensor and recessed from the MFS. The first and second spin generators each individually comprises at least one spin orbit torque (SOT) layer. The SOT layer may comprise BiSb. The first and second sensors are configured to detect a read signal using a first voltage lead and a second voltage lead. The first and second spin generators are configured to inject spin current through non-magnetic layers to the first and second sensors using a plurality of current leads.

A spin-orbit-torque (SOT) memory cell includes a first electrode embedded in dielectric material layers overlying a substrate; a magnetic-tunnel-junction-containing (MTJ-containing) pillar structure contacting a top surface of the first electrode and including a pinned layer and a free layer that overlies the pinned layer; a spin current metal line including a center portion that contacts the MTJ-containing pillar structure; and a selector element electrically connected to a first end of the spin current metal line.

The invention discloses a strong spin-orbit torque metal superlattice thin film material, and belongs to the technical field of new spin electron materials. The superlattice thin film material comprises a thin film system formed by heavy metal layers with strong spin-orbit coupling and light metal layers with high-orbit Hall conductivity, wherein the heavy metal layers periodically grow on a substrate; in each period, the thickness of the heavy metal layer with strong spin-orbit coupling is 1-3nm, and the thickness of the light metal layer with high-orbit Hall conductivity is 1-3nm. Electron orbital angular momentum flow accumulation is generated on the surface of the light metal layer, the orbital current is injected into heavy metal with strong spin-orbit coupling, and the orbital current is converted into spin current by utilizing the strong spin-orbit coupling characteristic of the heavy metal layer. Therefore, the spin current generation efficiency of the strong spin orbit torque metal superlattice thin film material can be improved, and the giant damping spin orbit torque efficiency and the low-current-density turnover ferromagnetic layer magnetic moment are realized.

An electronic device is presented comprising: at least one basic block, and a control circuit. Each basic block comprises an active unit configured and operable to be responsive to one of circularly polarized electromagnetic field or circularly polarized spin current by a change in magnetization orientation in the active unit. The control circuit is configured and operable to carry out one of the following: (i) monitoring changes in at least one electrical property of the active unit to thereby monitor the change in magnetization orientation in the active unit in response to the circularly polarized electromagnetic field being applied to the active unit, or (ii) managing generation of the circularly polarized spin current in the active unit to thereby induce said change in the magnetization orientation in the active unit.

The invention provides a magnetic heterojunction structure for current-spin current conversion, a spin electronic device and a preparation method. The magnetic heterojunction structure comprises a substrate, a first electrode, a second electrode, a third electrode and a fourth electrode, the magnetic heterojunction is formed on the substrate, the magnetic heterojunction comprises a ferromagnetic layer and a non-magnetic layer, and the non-magnetic layer is an alloy layer formed by a material of a group IIIA element and a material of a group VA element in a periodic table of elements; wherein the ferromagnetic layer has perpendicular magnetic anisotropy. Compared with the prior art, the method has the advantages that a high-quality magnetic heterojunction structure can be obtained by using the prepared high-quality III-V group alloy film by utilizing the contribution of the spin current from the P orbit, so that a high-quality electronic device is obtained, a way is opened up for improving the spin current efficiency, and the range of materials which can be applied to spintronics is expanded.

A magnetoresistive memory device and an integrated memory circuit are provided. The magnetoresistive memory device includes a magnetic tunneling junction (MTJ) and a composite spin orbit torque (SOT) channel in contact with a terminal of the MTJ. The SOT channel includes: a first channel layer, configured to convert a portion of a charge current into an orbital current based on orbital Hall effect; and a second channel layer, covering the first channel layer, and configured to convert a portion of the charge current into a first spin current based on spin Hall effect, and to convert the orbital current to a second spin current.

A magnetic memory device including a tunneling magnetoresistance layer and a memory device including the magnetic memory device are provided. The magnetic memory device includes the tunneling magnetoresistance layer, including a free layer, a tunneling barrier layer, and a pinned layer, and a spin orbit torque (SOT) layer configured to provide a spin current to change a magnetization direction of the free layer of the tunneling magnetoresistance layer, wherein the SOT layer includes an orbital Hall conductance (OHC) material layer configured to provide an orbital Hall current and a conversion layer configured to convert the orbital Hall current of the OHC material layer into the spin current, and the OHC material layer includes at least one material of iridium (Ir), manganese (Mn), vanadium (V), chromium (Cr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), tantalum (Ta), tungsten (W), and rhenium (Re), or an alloy thereof.

The invention discloses a spin current spatial distribution and polarization direction adjustable spin electronic device, which comprises a substrate, and is characterized in that the substrate is provided with a non-magnetic spin source layer, a ferromagnetic layer arranged on the non-magnetic spin source layer and a current reforming layer arranged on the ferromagnetic layer; specifically, the non-magnetic spin source layer and the ferromagnetic layer form a heterojunction, and a current reforming layer with a specific plane geometric structure grows on the heterojunction. According to the invention, anisotropic magnetic moment flipping of the spin torque and full electromagnetic moment flipping of the spin torque are realized.

The present disclosure generally relates to a magnetic recording head comprising a read head. The read head comprises a first sensor disposed at a media facing surface (MFS) comprising at least one free layer, a second sensor disposed at the MFS comprising at least one free layer, a first spin generator spaced from the first sensor and recessed from the MFS, and a second spin generator spaced from the second sensor and recessed from the MFS. The first and second spin generators each individually comprises at least one spin orbit torque (SOT) layer. The SOT layer may comprise BiSb. The first and second sensors are configured to detect a read signal using a first voltage lead and a second voltage lead. The first and second spin generators are configured to inject spin current through non-magnetic layers to the first and second sensors using a plurality of current leads.

A magnetoresistive random access memory (MRAM) structure is provided. The MRAM structure includes a chiral spin-orbit torque (SOT) metal bottom electrode (18) underneath a magnetic free layer (26), wherein the chiral SOT metal bottom electrode (18) is surrounded by a via dielectric material structure (24). The chiral SOT metal bottom electrode (18) is such that the charging current direction, the spin current direction, and the spin polarization direction are in the same direction perpendicular to the horizontal surface of the chiral SOT metal bottom electrode (18).

The invention provides an SOT-MRAM memory cell and an SOT-MRAM memory, the SOT-MRAM memory cell comprises a spin-orbit moment effect layer, a magnetic tunnel junction above the spin-orbit moment effect layer, and a spin current enhancement layer / growth auxiliary layer located below the spin-orbit moment effect layer, the spin current enhancement layer is opposite to the magnetic tunnel junction, the growth auxiliary layer is located below the spin current enhancement layer, and the spin current enhancement layer is located below the magnetic tunnel junction. The growth auxiliary layer is used for assisting the growth of the spin current enhancement layer, and the electrochemical potential of the growth auxiliary layer is higher than that of the spin current enhancement layer, so that an interface electric field is formed at the interface of the growth auxiliary layer and the spin current enhancement layer; wherein the spin orbit moment effect layer is used for generating a first spin current transmitted to the direction of the free layer of the magnetic tunnel junction and a second spin current transmitted to the direction of the spin current enhancement layer; when the second spin current is transmitted to the interface with the interface electric field, the polarization direction of the second spin current is additionally deflected, and the second spin current and the first spin current jointly apply spin orbit moment to the magnetic moment of the free layer of the magnetic tunnel junction.

A magnetoresistive random access memory (MRAM) structure is provided. The MRAM structure includes a chiral spin-orbit-torque (SOT) metal bottom electrode (18) under the magnetic free layer (26) where

The invention provides a ferromagnetic / heavy metal heterojunction spin Hall magnetoresistance regulation and control method, which comprises the following steps of: introducing an antiferromagnetic insulating layer between a ferromagnetic metal layer and a substrate under the conditions of not changing a heavy metal material and not damaging a ferromagnetic / heavy metal interface, and regulating and controlling the direction of a neel vector of the antiferromagnetic insulating layer, so that the ferromagnetic / heavy metal heterojunction spin Hall magnetoresistance is obtained. Reflection and absorption of ferromagnetic / heavy metal heterojunction spin current are regulated and controlled so as to change the size and sign of spin Hall magnetoresistance.

The invention provides a heavy metal / ferromagnetic heterojunction spin orbit torque efficiency regulation and control method, and relates to the field of spin electronic devices, and the method comprises the steps: introducing a vanadium-based oxide with an electronic phase change characteristic at a heavy metal side, and preparing a vanadium-based oxide layer / heavy metal layer / ferromagnetic layer multilayer film heterojunction; current is applied to the vanadium-based oxide layer, orbital flow perpendicular to the current direction is generated based on the orbital Hall effect, the orbital flow flows into the heavy metal layer through interlayer coupling and is converted into spin current perpendicular to the film surface, the spin current and spin current generated by the spin Hall effect of the heavy metal layer are overlaid and then injected into the ferromagnetic layer, and spin orbital torque is enhanced; the spin-orbit torque efficiency is improved; the electronic phase change of the vanadium-based oxide layer is triggered through external excitation, the orbital flow density is dynamically adjusted, and the spin-orbit torque efficiency is regulated and controlled. According to the invention, the dynamic regulation and control of the spin-orbit torque efficiency can be realized by introducing the phase-change material without changing the component or structure of the heterojunction material.

The present disclosure generally relates to a magnetic recording head comprising a read head. The read head comprises a sensor disposed at a media facing surface (MFS) and a spin generator spaced from the sensor and recessed from the MFS. The sensor and spin generators are disposed on a non-magnetic layer. The sensor comprises a free layer and the spin generator comprises at least one spin orbit torque (SOT) layer. The SOT layer may comprise topological material such as BiSb. The sensor is configured to detect a read signal using a first voltage lead and a second voltage lead. The spin generator is configured to inject spin current through the non-magnetic layer to the sensor using a first current lead and a second current lead. The shape of the non-magnetic layer is a triangular or trapezoidal shape to further concentrate spin current.

To provide a magnetic recording head including a read head with high signal output for use in a magnetic recording device.SOLUTION: A read head 500 includes a sensor 540 disposed on a media facing surface (MFS) and a spin generator 550 disposed away from the sensor and recessed from the MFS. The sensor and the spin generator are disposed on a non-magnetic layer 406. The sensor includes a free layer, and the spin generator includes at least one spin-orbit-torque (SOT) layer 510. The SOT layer is configured from a topological material such as BiSb. The sensor detects a read signal by using a first voltage lead line V+ and a second voltage lead line V-. The spin generator is configured to inject a spin current into the sensor via the non-magnetic layer by using a first current lead line I+ and a second current lead line I-. The shape of the non-magnetic layer is triangular or trapezoidal to further concentrate the spin current.SELECTED DRAWING: Figure 5A-5B

Provided are a magnetic memory device, a method of manufacturing the magnetic memory device, and a memory apparatus including the magnetic memory device. The magnetic memory device includes a spin-orbit torque (SOT) generation layer configured to generate a SOT, a spin current transfer layer on a lower surface of the SOT generation layer, and a tunneling magnetoresistance layer on a lower surface of the spin current transfer layer and including a free layer, a tunnel barrier layer, and a pinned layer. The spin current transfer layer is configured to transfer a spin current generated from the SOT generation layer to the free layer.

This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

A controllable magnetic connection element comprising a dilute magnetic semiconductor for connecting topological qubits includes a magnetic connector and a magnet. The magnet is configured to alter a paramagnetic / diamagnetic character of the magnetic connector to control the magnetic connection to allow or prevent the transmission of a spin current between the topological qubits. A method for controlling entanglement between topological qubits includes controlling a magnetic field around a magnetic connection between the topological qubits to interrupt or allow transmission of spin polarised electrons between the topological qubits and thereby entangle or prevent entanglement between them.

The invention relates to the technical field of semiconductors, in particular to a storage unit, a forming method of the storage unit, a data writing method and a memory. The spin-orbit moment layer, the insulating layer and the magnetic tunnel junction layer are sequentially located on the substrate, and the magnetic tunnel junction layer comprises a free layer, a tunnel layer and a reference layer which are stacked; wherein the insulating layer is used for reducing the thermal diffusion influence on the free layer when the spin orbit moment layer is electrified; the spin orbit moment layer is used for generating spin current and tunneling through the insulating layer to enter the free layer under the action of external voltage so as to overturn the magnetization direction in the free layer, so that the quantity, speed and the like of the spin current entering the free layer can be controlled through the external voltage, the data reading and writing speed is more controllable, and the data reading and writing efficiency is improved. And the writing cost is lower.

The present invention relates to a spin current generation device using an SiOC topological insulator, and a manufacturing method therefor. The spin current generation device using an SiOC topological insulator, according to the present invention, comprises: a substrate (200); a gate electrode (303) disposed on the substrate (200); a gate insulating film (100) disposed on the substrate (200) and the gate electrode (303); a source electrode (301) disposed on the gate insulating film (100); and a drain electrode (302) disposed on the gate insulating film (100), wherein the gate insulating film (100) is composed of an SiC topological insulator and has a dielectric constant of 0.01 to 2.5.

A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3d orbitals.

Provided is a magnetoresistive storage device based on a topological spin material. The magnetoresistive storage device comprises: a spin-orbit coupling layer, which is made of a topological insulator and used for generating a spin current; a nickel oxide layer, which is formed on the spin-orbit coupling layer; an interface layer, which is formed on the nickel oxide layer; and a magnetic tunnel junction, which is formed on the interface layer and comprises ferromagnetic layers that are formed on the upper and lower sides of a barrier layer. The spin current is transmitted in the nickel oxide layer in the form of magnons and then acts on the ferromagnetic layers, and the interface layer is used for enhancing the anisotropy of the ferromagnetic layers.

The invention provides a microwave phase measurement system based on magneton-photon coupling characteristics. According to the system, an integrated electrode support / GGG / YIG / Pt multilayer structure is embedded in a microwave cavity, and magnetons carry microwave phase information through coupling of the magnetons and photons in the YIG. Magneton precession of the YIG layer causes spin current to be generated in the Pt layer, the spin current is converted into measurable voltage signals through inverse spin Hall effect, and high-resolution phase measurement is realized by means of frequency mixing, coherent detection and the like. The method is high in anti-interference capability, can realize high-sensitivity and low-cost microwave phase measurement, and is expected to be used in the fields of spintronics, microwave measurement, quantum information reading and the like.

The application belongs to the technical field of spintronics, and specifically forms a vortex of electron drift velocity at the interface of a magnetic layer and a metal layer by a difference in conductivity, further utilizes a spin vortex coupling effect to realize conversion of charge current to spin current, and thereby drives a magnetic moment to flip through a spin-orbit moment. As an example, the application deposits a Cu layer with high conductivity on a PtCo alloy layer with lower conductivity through magnetron sputtering, and constructs a heterostructure with a PtCo / Cu interface spin vortex coupling effect. By increasing the thickness of the Cu layer to improve the conductivity of the Cu layer, a significant improvement in the orbital moment efficiency can be observed. Not only does this provide valuable experimental evidence for in-depth understanding of the physical mechanism of interface-induced spin current, but also enriches the conversion approach between charge current and spin current, and opens up a simple and efficient new path for the research and design of a new generation of spintronic devices.

The invention relates to a construction method of a high-spin-selectivity photoelectric detector, and the method comprises the steps: setting a scattering region in the middle of a photoelectric detector model constructed by an armchair type Janus WSSe lattice, and enabling the regions at the two ends to serve as a left electrode and a right electrode respectively; the method comprises the following steps: introducing a vacancy defect of a single atomic level into a scattering region of a photoelectric detector, carrying out electronic local state analysis and impurity doping analysis on the scattering region after the defect is introduced, and screening out transition metal elements meeting preset conditions as doping elements; and performing bias voltage regulation and control on the photoelectric detector doped with the elements to construct a cooperative regulation and control strategy so as to complete construction of the photoelectric detector. According to the invention, through atomic scale defect introduction and transition metal doping modes, the photo-generated spinning current intensity, the spinning polarizability and the selective response ability to polarized light are significantly improved.

A spintronics device is a spintronics device that generates a spin current, the device including: a metal layer; a semiconductor layer having a lower carrier mobility or a lower electrical conductivity than the metal layer; and a gradient layer located at a boundary between the metal layer and the semiconductor layer, and having a gradient in the carrier mobility or the electrical conductivity.

A spin orbit torque magnetoresistive random access memory (SOT MRAM) includes at least a spin current source alloy layer, a ferromagnetic free layer, and an insulation layer. The spin current source alloy layer is a nickel-tungsten alloy layer. The ferromagnetic free layer is located on the spin current source alloy layer. The insulation layer is located on the ferromagnetic free layer. Since the nickel-tungsten alloy layer has favorable perpendicular magnetic anisotropic and can maintain a high spin Hall angle, it is suitable as a spin current source for the SOT MRAM.

A spin-orbit-torque (SOT) memory cell includes a first electrode embedded in dielectric material layers overlying a substrate; a magnetic-tunnel-junction-containing (MTJ-containing) pillar structure contacting a top surface of the first electrode and including a pinned layer and a free layer that overlies the pinned layer; a spin current metal line including a center portion that contacts the MTJ-containing pillar structure; and a selector element electrically connected to a first end of the spin current metal line.

A spintronic device and an in-memory computing apparatus. The spintronic device comprises: a substrate; and a complex oxide layer and a magnetic tunnel junction structure, which are sequentially formed from bottom to top on the substrate, wherein there is a two-dimensional electron gas region at an interface of the complex oxide layer, and when a read / write voltage is applied to the spintronic device, a spin current generated by the magnetic tunnel junction structure tunnels into the two-dimensional electron gas region at the interface of the complex oxide layer, so as to change the density of a two-dimensional electron gas, such that the magnetic tunnel junction structure completes the reading or writing of data. Therefore, the effect of improving the reading reliability of the device is achieved.