53 results about "Spin current" patented technology

Provided are a magnetic memory device, a method of manufacturing the magnetic memory device, and a memory apparatus including the magnetic memory device. The magnetic memory device includes a spin-orbit torque (SOT) generation layer configured to generate a SOT, a spin current transfer layer on a lower surface of the SOT generation layer, and a tunneling magnetoresistance layer on a lower surface of the spin current transfer layer and including a free layer, a tunnel barrier layer, and a pinned layer. The spin current transfer layer is configured to transfer a spin current generated from the SOT generation layer to the free layer.

This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

The present invention relates to a spin current generation device using an SiOC topological insulator, and a manufacturing method therefor. The spin current generation device using an SiOC topological insulator, according to the present invention, comprises: a substrate (200); a gate electrode (303) disposed on the substrate (200); a gate insulating film (100) disposed on the substrate (200) and the gate electrode (303); a source electrode (301) disposed on the gate insulating film (100); and a drain electrode (302) disposed on the gate insulating film (100), wherein the gate insulating film (100) is composed of an SiC topological insulator and has a dielectric constant of 0.01 to 2.5.

A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3d orbitals.

Provided is a magnetoresistive storage device based on a topological spin material. The magnetoresistive storage device comprises: a spin-orbit coupling layer, which is made of a topological insulator and used for generating a spin current; a nickel oxide layer, which is formed on the spin-orbit coupling layer; an interface layer, which is formed on the nickel oxide layer; and a magnetic tunnel junction, which is formed on the interface layer and comprises ferromagnetic layers that are formed on the upper and lower sides of a barrier layer. The spin current is transmitted in the nickel oxide layer in the form of magnons and then acts on the ferromagnetic layers, and the interface layer is used for enhancing the anisotropy of the ferromagnetic layers.

The invention provides a microwave phase measurement system based on magneton-photon coupling characteristics. According to the system, an integrated electrode support / GGG / YIG / Pt multilayer structure is embedded in a microwave cavity, and magnetons carry microwave phase information through coupling of the magnetons and photons in the YIG. Magneton precession of the YIG layer causes spin current to be generated in the Pt layer, the spin current is converted into measurable voltage signals through inverse spin Hall effect, and high-resolution phase measurement is realized by means of frequency mixing, coherent detection and the like. The method is high in anti-interference capability, can realize high-sensitivity and low-cost microwave phase measurement, and is expected to be used in the fields of spintronics, microwave measurement, quantum information reading and the like.

The application belongs to the technical field of spintronics, and specifically forms a vortex of electron drift velocity at the interface of a magnetic layer and a metal layer by a difference in conductivity, further utilizes a spin vortex coupling effect to realize conversion of charge current to spin current, and thereby drives a magnetic moment to flip through a spin-orbit moment. As an example, the application deposits a Cu layer with high conductivity on a PtCo alloy layer with lower conductivity through magnetron sputtering, and constructs a heterostructure with a PtCo / Cu interface spin vortex coupling effect. By increasing the thickness of the Cu layer to improve the conductivity of the Cu layer, a significant improvement in the orbital moment efficiency can be observed. Not only does this provide valuable experimental evidence for in-depth understanding of the physical mechanism of interface-induced spin current, but also enriches the conversion approach between charge current and spin current, and opens up a simple and efficient new path for the research and design of a new generation of spintronic devices.

The invention relates to a construction method of a high-spin-selectivity photoelectric detector, and the method comprises the steps: setting a scattering region in the middle of a photoelectric detector model constructed by an armchair type Janus WSSe lattice, and enabling the regions at the two ends to serve as a left electrode and a right electrode respectively; the method comprises the following steps: introducing a vacancy defect of a single atomic level into a scattering region of a photoelectric detector, carrying out electronic local state analysis and impurity doping analysis on the scattering region after the defect is introduced, and screening out transition metal elements meeting preset conditions as doping elements; and performing bias voltage regulation and control on the photoelectric detector doped with the elements to construct a cooperative regulation and control strategy so as to complete construction of the photoelectric detector. According to the invention, through atomic scale defect introduction and transition metal doping modes, the photo-generated spinning current intensity, the spinning polarizability and the selective response ability to polarized light are significantly improved.

A spintronic device and an in-memory computing apparatus. The spintronic device comprises: a substrate; and a complex oxide layer and a magnetic tunnel junction structure, which are sequentially formed from bottom to top on the substrate, wherein there is a two-dimensional electron gas region at an interface of the complex oxide layer, and when a read / write voltage is applied to the spintronic device, a spin current generated by the magnetic tunnel junction structure tunnels into the two-dimensional electron gas region at the interface of the complex oxide layer, so as to change the density of a two-dimensional electron gas, such that the magnetic tunnel junction structure completes the reading or writing of data. Therefore, the effect of improving the reading reliability of the device is achieved.

Magnetic storage devices, methods of manufacturing the same, and storage devices including the same are provided. A magnetic storage device includes a spin-orbit torque (SOT) generation layer configured to generate a SOT, a spin current transfer layer on a lower surface of the SOT generation layer, and a tunneling magnetoresistive layer on a lower surface of the spin current transfer layer and including a free layer, a tunnel barrier layer, and a pinned layer. The spin current transfer layer is configured to transfer the spin current generated from the SOT generation layer to the free layer.

A spin current magnetization rotational element according to the present disclosure includes a first ferromagnetic metal layer configured for a direction of magnetization to be changed and a spin-orbit torque wiring extending in a direction intersecting a lamination direction of the first ferromagnetic metal layer and bonded to the first ferromagnetic metal layer. The spin-orbit torque wiring includes a narrow portion, and at least a part of the narrow portion constitutes a junction to the first ferromagnetic metal layer.

A spintronics device 1 is provided with a generation layer 4 which is for generating a spin current and in which Al and Si are present in a mixed manner. The generation layer 4 includes a region in which variation in the composition ratios of Al and Si is within 20% of the respective average values thereof in the layer thickness direction of the generation layer 4.

The application relates to the technical field of spin electronics devices and quantum information devices, and provides a superconductor-spin switchable device and a superconductor-spin switching method.The device comprises a magnetic layer and a non-magnetic layer; the magnetic layer has perpendicular magnetic anisotropy; and the non-magnetic layer is a layer; the magnetic layer and the non-magnetic layer form a magnetic / non-magnetic heterojunction; under the condition of being lower than a first temperature, the In-Bi-based alloy layer has superconducting characteristics; and under the condition of being higher than the first temperature, the In-Bi-based alloy layer can realize current-spin current conversion.The application can realize a new type of functional material and a device thereof which can exhibit superconducting characteristics and high-efficiency current-spin current conversion capability in the same material system, break through the limitation of separation of traditional superconducting materials and spin materials, and realize integrated and cooperative work of the two.

The present invention relates to probabilistically controllable random number generators. According to one embodiment, a random number generator includes a spin current generating layer formed of a spin Hall effect conductive material and a spintronic device disposed thereon. The spintronic device includes a free magnetic layer disposed on the spin current generating layer, a non-magnetic intermediate layer disposed on the free magnetic layer, and a reference magnetic layer disposed on the non-magnetic intermediate layer. The spin current generating layer is configured to receive a first in-plane current in a first direction to rotate a magnetic moment of the free magnetic layer from an easy axis direction to a hard axis direction, and upon cessation of the first in-plane current, the magnetic moment of the free magnetic layer is randomly rotated from the hard axis direction back to either a positive direction or a negative direction of the easy axis. A magnetic moment of the reference magnetic layer is fixed in either the positive direction or the negative direction of the easy axis. The spintronic device is configured to receive a perpendicular current to read a resistance state of the spintronic device.

The invention discloses a spinning terahertz nano oscillator and a chiral regulation and control method thereof. The method comprises the following steps: under the action of a femtosecond laser chiral electric field, inducing an antiferromagnetic layer of a spin terahertz nano oscillator to generate a light-spin orbital moment; the optical-spin orbit moment drives the oscillation of the antiferromagnetic magnetic moment to form spin polarization, and the polarized spin current is converted into a charge current and is radiated to obtain a terahertz signal of the antiferromagnetic frequency related to chirality. The circular polarization femtosecond laser is used for exciting generation of out-of-plane polarization spin in antiferromagnetic metal, radiation of antiferromagnetic terahertz nano oscillation electromagnetic waves is achieved, and the spin terahertz nano oscillation radiation source has the advantages of being fast in response, easy to prepare and capable of working at the room temperature.

The application provides a magnetic random memory and device, the magnetic random memory comprises: a seed layer having a first crystal direction; a spin-orbit torque wiring layer arranged on the seed layer, a crystal lattice structure of the spin-orbit torque wiring layer has a second crystal direction under the action of the seed layer, and the spin-orbit torque wiring layer forms an out-of-plane direction damping torque when a spin-orbit torque current is input to the spin-orbit torque wiring layer; and a magnetic tunnel junction arranged on the spin-orbit torque wiring layer, the application can make the spin-orbit torque wiring layer have the spin-orbit torque of the out-of-plane direction damping torque, has a larger current-to-spin current conversion efficiency (spin Hall angle), can improve the flip efficiency, and can avoid an additional applied magnetic field for breaking symmetry when flipping a perpendicular magnetic anisotropy magnetic moment.

The application discloses a magnetic recording device, a multi-state disk and a read-write method, and belongs to the field of magnetic storage. The magnetic recording device comprises a substrate and a magnetic recording film above the substrate. The magnetic recording film is circular and comprises three ferromagnetic layers separated by two non-magnetic intermediate layers. The easy magnetization directions of the three ferromagnetic layers are along the x, y and z directions respectively. The z direction is the vertical direction, and the x and y directions are in-plane directions and are along the radial direction and the tangential direction respectively. The multi-state disk comprises the magnetic recording device, a read head, a write head and magnetic shielding layers on both sides of the read head. The write head comprises a vertical magnetic pole and two pairs of horizontal magnetic poles, and coils wound on the magnetic poles. The read head comprises a spin current generation layer and a film layer structure (a magnetic tunnel junction, a spin valve or a Hall bar). The application can improve the storage density of the magnetic recording device, thereby greatly improving the storage density of the disk based on the magnetic recording device.

The invention discloses a spin Hall device with non-uniform current distribution and a preparation method and application thereof, and belongs to the technical field of magnetic storage. The invention provides a spin Hall device with non-uniform current distribution. The spin Hall device comprises a substrate, a seed layer, a heavy metal layer and a ferromagnetic layer which are sequentially laminated from bottom to top, wherein the ferromagnetic layer and the heavy metal layer form a vertically stacked heterojunction; the orthographic projection of the ferromagnetic layer on the heavy metal layer is located in the boundary of a spin current generation area of the heavy metal layer, and the area of the ferromagnetic layer is smaller than that of the spin current generation area. The ferromagnetic layer only covers part of the heavy metal layer, and the rest part of the ferromagnetic layer is completely removed, so that the problem of non-contribution shunting generally existing in a traditional SOT device is solved, the current utilization efficiency can be improved, Joule heat generated by the ferromagnetic layer is reduced, and the service life of the device is prolonged; the SOT effective field efficiency can be improved, and the operation energy consumption of the device can be reduced.

A spin-orbit torque (SOT) magnetic device with synthetic antiferromagnetic (SAF) structure, including a SOT layer for providing a spin current, a SAF structure composed of a first ferromagnetic layer, a nickel oxide (NiO) exchange coupling layer and a second ferromagnetic layer, and a capping layer on the SAF structure. This magnetoelectric device of oxide SAF structure can achieve zero-field switching through current-induced SOT, and can be used as the free layer of a magnetoresistive random access memory (MRAM).

A magnetoresistive memory device and an integrated memory circuit are provided. The magnetoresistive memory device includes a magnetic tunneling junction (MTJ) and a composite spin orbit torque (SOT) channel in contact with a terminal of the MTJ. The SOT channel includes: a first channel layer, configured to convert a portion of a charge current into an orbital current based on orbital Hall effect; and a second channel layer, covering the first channel layer, and configured to convert a portion of the charge current into a first spin current based on spin Hall effect, and to convert the orbital current to a second spin current.

A magnetoresistive random access memory (MRAM) structure is provided that includes a chiral spin-orbit-torque (SOT) metal bottom electrode under the bottom magnetic free layer where the chiral SOT metal bottom electrode is surrounded by a via dielectric. The chiral SOT metal bottom electrode enables the charge current, spin current and spin polarization directions to be in the same direction which is perpendicular to the surface of the chiral SOT via structure.

A spin-orbit-torque (SOT) magnetoresistive memory device includes an array of repetition units. Each of the repetition units contains a first magnetic tunnel junction (MTJ) located over and electrically contacting a first lower electrode, a second MTJ located over and electrically contacting a second lower electrode, a spin current metal line located over a top surface of the first MTJ and a top surface of the second MTJ, a first selector element electrically connected to a first end of the spin current metal line, and a second selector element electrically connected to a second end of the spin current metal line.

The invention relates to a magnetic multilayer film and a preparation method and application thereof. The magnetic multilayer film includes: a substrate; the heavy metal layer, the ferromagnetic layer, the rare earth magnetic alloy layer, the rare earth metal layer, the light metal layer and the covering protection layer are sequentially arranged on the substrate in a stacked mode. Wherein the heavy metal layer is configured to generate spin current under the action of current and act on the ferromagnetic layer in the form of spin orbit moment; the light metal layer is configured to generate track flow under the action of current; the rare earth metal layer and the rare earth magnetic alloy layer are configured to convert the orbital flow into orbital moment and act on the rare earth magnetic alloy layer; wherein the orbital moment and the spin orbital moment have a synergistic effect, and the orbital moment and the spin orbital moment are used for reducing the critical current of magnetization overturning of the magnetic multilayer film. According to the magnetic multilayer film, orbital moment cooperative driving is achieved, the critical current of magnetization overturning of the device is remarkably reduced, and the preparation of a high-efficiency and low-power-consumption spin electronic device is facilitated.

The invention relates to the technical field of spintronics devices and quantum information devices, and provides a superconducting-spin switchable device and a superconducting-spin switching method, and the device comprises a magnetic layer which has perpendicular magnetic anisotropy; and a non-magnetic layer, the non-magnetic layer being a layer; the magnetic layer and the non-magnetic layer form a magnetic / non-magnetic heterojunction; the In-Bi-based alloy layer has a superconducting characteristic under the condition that the temperature is lower than a first temperature, and the In-Bi-based alloy layer can realize current-spin current conversion under the condition that the temperature is higher than the first temperature. According to the novel functional material and the device thereof, the superconducting characteristic and the efficient current-spin current conversion capacity can be shown in the same material system, the limitation of separation of a traditional superconducting material and a traditional spin material is broken through, and integrated cooperative work of the superconducting material and the spin material is achieved.

The present disclosure generally relates to temperature detection devices including a ferromagnetic (FM) material disposed at a media facing surface (MFS). The FM material is configured to produce a first electric voltage signal in response to a temperature gradient due to an anomalous Nernst effect. The temperature detection device may also include a spin-orbit torque (SOT) material abutting the FM material. The SOT material includes at least one of BiSb, a topological insulator, a topological half-Heusler alloy, or a weakly oxidized heavy metal. The SOT material is recessed from the MFS, wherein the SOT material is configured to receive a spin current parallel to the temperature gradient generated by a spin Seebeck effect in the FM material. The spin current is detectable as a second electric voltage signal via an inverse spin Hall effect. The first electric voltage signal is added to the second electric voltage signal.

A multi-resistance-state spintronic device, including: a top electrode and a bottom electrode respectively connected to a read-write circuit; and a magnetic tunnel junction between two electrodes. The magnetic tunnel junction includes from top to bottom: a ferromagnetic reference layer, a barrier tunneling layer, a ferromagnetic free layer, and a spin-orbit coupling layer. Nucleation centers are provided at two ends of the ferromagnetic free layer to generate a magnetic domain wall; the spin-orbit coupling layer is connected to the bottom electrode, and when a write pulse is applied, an electron spin current is generated and drives the magnetic domain wall through a spin-orbit torque to move; a plurality of local magnetic domain wall pinning centers are provided at an interface between the spin-orbit coupling layer and the ferromagnetic free layer to enhance a strength of a DM interaction constant between interfaces.

The application provides a magnetic heterojunction structure for current-to-spin current conversion, a spintronic device and a preparation method, and the magnetic heterojunction structure comprises a substrate and a magnetic heterojunction formed on the substrate, the magnetic heterojunction comprises a ferromagnetic layer and a non-magnetic layer, the non-magnetic layer is an alloy layer formed by a material of a group IIIA element in the periodic table and a material of a group VA element; wherein the ferromagnetic layer has perpendicular magnetic anisotropy. The application can utilize the contribution from P-orbital spin current, utilize the prepared high-quality III-V alloy thin film to obtain a high-quality magnetic heterojunction structure, and thus obtain a high-quality electronic device, open up a path for improving spin current efficiency, and further expand the range of materials that can be used for spintronic applications.

The application relates to a magnetic multilayer film and a preparation method and application thereof. The magnetic multilayer film comprises a substrate and a heavy metal layer, a ferromagnetic layer, a rare earth magnetic alloy layer, a rare earth metal layer, a light metal layer and a protective cover layer which are sequentially arranged on the substrate; the heavy metal layer is configured to generate spin current under the action of current and acts on the ferromagnetic layer in the form of spin-orbit torque; the light metal layer is configured to generate orbital current under the action of current; the rare earth metal layer and the rare earth magnetic alloy layer are configured to convert the orbital current into orbital torque and act on the rare earth magnetic alloy layer; the orbital torque and the spin-orbit torque synergistically act to reduce the critical current of magnetization reversal of the magnetic multilayer film. The magnetic multilayer film of the application realizes orbital torque synergistic driving, significantly reduces the critical current of magnetization reversal of the device, and is beneficial to the preparation of high-efficiency and low-power-consumption spintronic devices.

This invention relates to a magnetic tunnel junction memory cell based on magnetic skyrmions and its operation method. A magnetic tunnel junction memory cell may include: a reference magnetic layer and a free magnetic layer separated by a barrier layer; a skyrmion carrier layer separated from the free magnetic layer by a spacer layer, the spacer layer inducing ferromagnetic coupling or antiferromagnetic coupling between the skyrmion carrier layer and the free magnetic layer; and a cap layer formed on the skyrmion carrier layer, the cap layer applying a bias magnetic field to the skyrmion carrier layer by an exchange bias, such that the skyrmion carrier layer is in the skyrmion phase, wherein the cap layer generates a spin current when an in-plane write current is applied, the spin current being vertically injected into the skyrmion carrier layer to write skyrmions, and the skyrmions being coupled to the free magnetic layer through ferromagnetic coupling or antiferromagnetic coupling induced by the spacer layer.