The invention discloses a self-excited spinning single-electron electromagnetic field effect transistor, a preparation method and the application. The electromagnetic field effect transistor comprises a base plate, a source electrode, a drain electrode, a gate electrode and a nanowire active area. The source electrode, the drain electrode and the gate electrode are arranged on the base plate. The nanowire active area is a current channel between the source electrode and the drain electrode, and the nanowire active area is polymorphic silicon carbide nanowires mingling with magnetic metals. According to the self-excited spinning single-electron electromagnetic field effect transistor, the preparation method and the application, and the indoor temperature can realize a single-electron coulomb block effect and a single-electron tunneling effect; at the same time, when the single-electron coulomb block effect and the single-electron tunneling effect are achieved, the single electron oscillation generates a variable electric field, and the variable electric field generates a magnetic field; under the condition that drain voltage replenishes energy, multi-structure electromagnetic oscillation can be presented, and pA-grade single-electron spinning current is generated. The self-excited spinning single-electron electromagnetic field effect transistor can be used as component for generating, converting, transferring and storing of quantum information.