129 results about "Spin current" patented technology

The present disclosure generally relates to a magnetic recording head comprising a read head. The read head comprises a first sensor disposed at a media facing surface (MFS) comprising at least one free layer, a second sensor disposed at the MFS comprising at least one free layer, a first spin generator spaced from the first sensor and recessed from the MFS, and a second spin generator spaced from the second sensor and recessed from the MFS. The first and second spin generators each individually comprises at least one spin orbit torque (SOT) layer. The SOT layer may comprise BiSb. The first and second sensors are configured to detect a read signal using a first voltage lead and a second voltage lead. The first and second spin generators are configured to inject spin current through non-magnetic layers to the first and second sensors using a plurality of current leads.

A spin-orbit-torque (SOT) memory cell includes a first electrode embedded in dielectric material layers overlying a substrate; a magnetic-tunnel-junction-containing (MTJ-containing) pillar structure contacting a top surface of the first electrode and including a pinned layer and a free layer that overlies the pinned layer; a spin current metal line including a center portion that contacts the MTJ-containing pillar structure; and a selector element electrically connected to a first end of the spin current metal line.

The invention provides a magnetic heterojunction structure for current-spin current conversion, a spin electronic device and a preparation method. The magnetic heterojunction structure comprises a substrate, a first electrode, a second electrode, a third electrode and a fourth electrode, the magnetic heterojunction is formed on the substrate, the magnetic heterojunction comprises a ferromagnetic layer and a non-magnetic layer, and the non-magnetic layer is an alloy layer formed by a material of a group IIIA element and a material of a group VA element in a periodic table of elements; wherein the ferromagnetic layer has perpendicular magnetic anisotropy. Compared with the prior art, the method has the advantages that a high-quality magnetic heterojunction structure can be obtained by using the prepared high-quality III-V group alloy film by utilizing the contribution of the spin current from the P orbit, so that a high-quality electronic device is obtained, a way is opened up for improving the spin current efficiency, and the range of materials which can be applied to spintronics is expanded.

A magnetic memory device including a tunneling magnetoresistance layer and a memory device including the magnetic memory device are provided. The magnetic memory device includes the tunneling magnetoresistance layer, including a free layer, a tunneling barrier layer, and a pinned layer, and a spin orbit torque (SOT) layer configured to provide a spin current to change a magnetization direction of the free layer of the tunneling magnetoresistance layer, wherein the SOT layer includes an orbital Hall conductance (OHC) material layer configured to provide an orbital Hall current and a conversion layer configured to convert the orbital Hall current of the OHC material layer into the spin current, and the OHC material layer includes at least one material of iridium (Ir), manganese (Mn), vanadium (V), chromium (Cr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), tantalum (Ta), tungsten (W), and rhenium (Re), or an alloy thereof.

The invention discloses a spin current spatial distribution and polarization direction adjustable spin electronic device, which comprises a substrate, and is characterized in that the substrate is provided with a non-magnetic spin source layer, a ferromagnetic layer arranged on the non-magnetic spin source layer and a current reforming layer arranged on the ferromagnetic layer; specifically, the non-magnetic spin source layer and the ferromagnetic layer form a heterojunction, and a current reforming layer with a specific plane geometric structure grows on the heterojunction. According to the invention, anisotropic magnetic moment flipping of the spin torque and full electromagnetic moment flipping of the spin torque are realized.

A magnetoresistive random access memory (MRAM) structure is provided. The MRAM structure includes a chiral spin-orbit torque (SOT) metal bottom electrode (18) underneath a magnetic free layer (26), wherein the chiral SOT metal bottom electrode (18) is surrounded by a via dielectric material structure (24). The chiral SOT metal bottom electrode (18) is such that the charging current direction, the spin current direction, and the spin polarization direction are in the same direction perpendicular to the horizontal surface of the chiral SOT metal bottom electrode (18).

A magnetoresistive random access memory (MRAM) structure is provided. The MRAM structure includes a chiral spin-orbit-torque (SOT) metal bottom electrode (18) under the magnetic free layer (26) where

The invention provides a heavy metal / ferromagnetic heterojunction spin orbit torque efficiency regulation and control method, and relates to the field of spin electronic devices, and the method comprises the steps: introducing a vanadium-based oxide with an electronic phase change characteristic at a heavy metal side, and preparing a vanadium-based oxide layer / heavy metal layer / ferromagnetic layer multilayer film heterojunction; current is applied to the vanadium-based oxide layer, orbital flow perpendicular to the current direction is generated based on the orbital Hall effect, the orbital flow flows into the heavy metal layer through interlayer coupling and is converted into spin current perpendicular to the film surface, the spin current and spin current generated by the spin Hall effect of the heavy metal layer are overlaid and then injected into the ferromagnetic layer, and spin orbital torque is enhanced; the spin-orbit torque efficiency is improved; the electronic phase change of the vanadium-based oxide layer is triggered through external excitation, the orbital flow density is dynamically adjusted, and the spin-orbit torque efficiency is regulated and controlled. According to the invention, the dynamic regulation and control of the spin-orbit torque efficiency can be realized by introducing the phase-change material without changing the component or structure of the heterojunction material.

The present disclosure generally relates to a magnetic recording head comprising a read head. The read head comprises a sensor disposed at a media facing surface (MFS) and a spin generator spaced from the sensor and recessed from the MFS. The sensor and spin generators are disposed on a non-magnetic layer. The sensor comprises a free layer and the spin generator comprises at least one spin orbit torque (SOT) layer. The SOT layer may comprise topological material such as BiSb. The sensor is configured to detect a read signal using a first voltage lead and a second voltage lead. The spin generator is configured to inject spin current through the non-magnetic layer to the sensor using a first current lead and a second current lead. The shape of the non-magnetic layer is a triangular or trapezoidal shape to further concentrate spin current.

Provided are a magnetic memory device, a method of manufacturing the magnetic memory device, and a memory apparatus including the magnetic memory device. The magnetic memory device includes a spin-orbit torque (SOT) generation layer configured to generate a SOT, a spin current transfer layer on a lower surface of the SOT generation layer, and a tunneling magnetoresistance layer on a lower surface of the spin current transfer layer and including a free layer, a tunnel barrier layer, and a pinned layer. The spin current transfer layer is configured to transfer a spin current generated from the SOT generation layer to the free layer.

This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

The invention relates to the technical field of semiconductors, in particular to a storage unit, a forming method of the storage unit, a data writing method and a memory. The spin-orbit moment layer, the insulating layer and the magnetic tunnel junction layer are sequentially located on the substrate, and the magnetic tunnel junction layer comprises a free layer, a tunnel layer and a reference layer which are stacked; wherein the insulating layer is used for reducing the thermal diffusion influence on the free layer when the spin orbit moment layer is electrified; the spin orbit moment layer is used for generating spin current and tunneling through the insulating layer to enter the free layer under the action of external voltage so as to overturn the magnetization direction in the free layer, so that the quantity, speed and the like of the spin current entering the free layer can be controlled through the external voltage, the data reading and writing speed is more controllable, and the data reading and writing efficiency is improved. And the writing cost is lower.

The present invention relates to a spin current generation device using an SiOC topological insulator, and a manufacturing method therefor. The spin current generation device using an SiOC topological insulator, according to the present invention, comprises: a substrate (200); a gate electrode (303) disposed on the substrate (200); a gate insulating film (100) disposed on the substrate (200) and the gate electrode (303); a source electrode (301) disposed on the gate insulating film (100); and a drain electrode (302) disposed on the gate insulating film (100), wherein the gate insulating film (100) is composed of an SiC topological insulator and has a dielectric constant of 0.01 to 2.5.

A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3d orbitals.

Provided is a magnetoresistive storage device based on a topological spin material. The magnetoresistive storage device comprises: a spin-orbit coupling layer, which is made of a topological insulator and used for generating a spin current; a nickel oxide layer, which is formed on the spin-orbit coupling layer; an interface layer, which is formed on the nickel oxide layer; and a magnetic tunnel junction, which is formed on the interface layer and comprises ferromagnetic layers that are formed on the upper and lower sides of a barrier layer. The spin current is transmitted in the nickel oxide layer in the form of magnons and then acts on the ferromagnetic layers, and the interface layer is used for enhancing the anisotropy of the ferromagnetic layers.

The invention provides a microwave phase measurement system based on magneton-photon coupling characteristics. According to the system, an integrated electrode support / GGG / YIG / Pt multilayer structure is embedded in a microwave cavity, and magnetons carry microwave phase information through coupling of the magnetons and photons in the YIG. Magneton precession of the YIG layer causes spin current to be generated in the Pt layer, the spin current is converted into measurable voltage signals through inverse spin Hall effect, and high-resolution phase measurement is realized by means of frequency mixing, coherent detection and the like. The method is high in anti-interference capability, can realize high-sensitivity and low-cost microwave phase measurement, and is expected to be used in the fields of spintronics, microwave measurement, quantum information reading and the like.

The application belongs to the technical field of spintronics, and specifically forms a vortex of electron drift velocity at the interface of a magnetic layer and a metal layer by a difference in conductivity, further utilizes a spin vortex coupling effect to realize conversion of charge current to spin current, and thereby drives a magnetic moment to flip through a spin-orbit moment. As an example, the application deposits a Cu layer with high conductivity on a PtCo alloy layer with lower conductivity through magnetron sputtering, and constructs a heterostructure with a PtCo / Cu interface spin vortex coupling effect. By increasing the thickness of the Cu layer to improve the conductivity of the Cu layer, a significant improvement in the orbital moment efficiency can be observed. Not only does this provide valuable experimental evidence for in-depth understanding of the physical mechanism of interface-induced spin current, but also enriches the conversion approach between charge current and spin current, and opens up a simple and efficient new path for the research and design of a new generation of spintronic devices.

The invention relates to a construction method of a high-spin-selectivity photoelectric detector, and the method comprises the steps: setting a scattering region in the middle of a photoelectric detector model constructed by an armchair type Janus WSSe lattice, and enabling the regions at the two ends to serve as a left electrode and a right electrode respectively; the method comprises the following steps: introducing a vacancy defect of a single atomic level into a scattering region of a photoelectric detector, carrying out electronic local state analysis and impurity doping analysis on the scattering region after the defect is introduced, and screening out transition metal elements meeting preset conditions as doping elements; and performing bias voltage regulation and control on the photoelectric detector doped with the elements to construct a cooperative regulation and control strategy so as to complete construction of the photoelectric detector. According to the invention, through atomic scale defect introduction and transition metal doping modes, the photo-generated spinning current intensity, the spinning polarizability and the selective response ability to polarized light are significantly improved.

A spin-orbit-torque (SOT) memory cell includes a first electrode embedded in dielectric material layers overlying a substrate; a magnetic-tunnel-junction-containing (MTJ-containing) pillar structure contacting a top surface of the first electrode and including a pinned layer and a free layer that overlies the pinned layer; a spin current metal line including a center portion that contacts the MTJ-containing pillar structure; and a selector element electrically connected to a first end of the spin current metal line.

A spintronic device and an in-memory computing apparatus. The spintronic device comprises: a substrate; and a complex oxide layer and a magnetic tunnel junction structure, which are sequentially formed from bottom to top on the substrate, wherein there is a two-dimensional electron gas region at an interface of the complex oxide layer, and when a read / write voltage is applied to the spintronic device, a spin current generated by the magnetic tunnel junction structure tunnels into the two-dimensional electron gas region at the interface of the complex oxide layer, so as to change the density of a two-dimensional electron gas, such that the magnetic tunnel junction structure completes the reading or writing of data. Therefore, the effect of improving the reading reliability of the device is achieved.

The invention relates to a laser-assisted regulation tunnel magnetoresistive sensor, a preparation method thereof and a zero field regulation method. The tunnel magnetoresistive sensor includes: a substrate; a multi-film structure formed on the substrate, wherein the multi-film structure comprises a magnetic tunnel junction and a spin current generation layer which are stacked; the magnetic tunnel junction is arranged close to the substrate; the laser transmission layer is formed on the multi-film structure, and the laser transmission layer has a laser transmission property. According to the embodiment of the invention, the magnetic anisotropy potential barrier can be reduced, so that the current density required by pulse current regulation and control is reduced, and the power consumption is reduced.

Provided are a magnetic memory using a spin current, an operating method thereof, and / or an electronic apparatus including the magnetic memory. The magnetic memory includes, first and second wirings spaced apart from each other and intersecting each other, and a data storage layer between the first and second wirings. The data storage layer includes a pinned layer with a fixed magnetic moment, a free layer spaced apart from the pinned layer and not having a fixed magnetic moment, and an insulating tunnel barrier layer provided between the pinned layer and the free layer. Among the first and second wirings, the wiring contacting the free layer includes a conductive wiring having no spin Hall effect, and the free layer includes a two-dimensional material which at room temperature has a spin Hall effect, magnetic properties, and metal properties. The two-dimensional material includes a two-dimensional van der Waals material.

Magnetic storage devices, methods of manufacturing the same, and storage devices including the same are provided. A magnetic storage device includes a spin-orbit torque (SOT) generation layer configured to generate a SOT, a spin current transfer layer on a lower surface of the SOT generation layer, and a tunneling magnetoresistive layer on a lower surface of the spin current transfer layer and including a free layer, a tunnel barrier layer, and a pinned layer. The spin current transfer layer is configured to transfer the spin current generated from the SOT generation layer to the free layer.

The invention provides a method and device for regulating and controlling spin orbit moment efficiency based on an antiferromagnetic heterojunction, and belongs to the field of spin electronic devices. The method comprises the following steps: after a film stack of an antiferromagnetic heterojunction grows and is processed into a spin-orbit moment device, applying an added field in a first magnetic field direction to the antiferromagnetic heterojunction at room temperature for cooling, and cooling to an ultralow temperature environment, and the Nell magnetic sequence direction of the antiferromagnetic layer in the antiferromagnetic heterojunction is changed relative to the spin polarization direction of the spin current generated by the heavy metal layer, so that the transport process of the spin current generated by the heavy metal layer in antiferromagnetic is changed, and the spin orbit moment efficiency and the critical flip current density of the antiferromagnetic heterojunction are regulated and controlled. The first magnetic field direction is parallel to the Y-axis direction of the rectangular coordinate system where the heavy metal layer is located. According to the invention, after the film stack is processed into a device, the spin transport process in the antiferromagnetic heterostructure can be regulated and controlled in a field-adding cooling manner, so that the spin orbit moment efficiency can be regulated and controlled.

The application discloses a GaN-based spin light-emitting device and a preparation method thereof. The device comprises a metal substrate, a GaN-based quantum light-emitting structure, an insulating tunnel layer, a ferromagnetic metal layer and a metal protective layer which are stacked from top to bottom. The GaN-based quantum light-emitting structure comprises an electron blocking layer, a hole transport layer, a radiative recombination layer and an electron transport layer which are stacked in sequence along the surface of the metal substrate. A two-dimensional material insertion layer composed of 1-3 layers of graphene is arranged between the insulating tunnel layer and the ferromagnetic metal layer or between the GaN-based quantum light-emitting structure and the insulating tunnel layer. By inserting a few layers of graphene above or below the insulating tunnel layer, impedance mismatch caused by direct contact of the ferromagnetic metal electrode with the semiconductor through the insulating layer hole is avoided, spin current tunneling is facilitated, the spin current can be expanded, and the injection efficiency of the spin current is improved. By changing the insertion position of the two-dimensional material insertion layer, the polarization direction of the injected current and the spin light-emitting characteristics can be controlled.

A spin current magnetization rotational element according to the present disclosure includes a first ferromagnetic metal layer configured for a direction of magnetization to be changed and a spin-orbit torque wiring extending in a direction intersecting a lamination direction of the first ferromagnetic metal layer and bonded to the first ferromagnetic metal layer. The spin-orbit torque wiring includes a narrow portion, and at least a part of the narrow portion constitutes a junction to the first ferromagnetic metal layer.

The present invention provides a probabilistic bit generator and control method, relating to the technical field of spintronic devices. The probabilistic bit generator comprises multiple magnetic tunnel junctions connected in series and a voltage comparator, wherein the multiple magnetic tunnel junctions form a probabilistic bit structure. A first current is injected into the spin current generation layer, and the generated spin current is injected into the magnetic layer, causing the magnetic moment in the magnetic layer to randomly flip. A second current is injected into the spin current generation layer, and the energy of the second current is less than the energy required to flip the magnetic moment, and is used to measure the voltage of the readout electrode layer. The voltage comparator inputs the sum of the voltages of the multiple magnetic tunnel junctions at the first input terminal, and inputs a reference voltage at the second input terminal. The reference voltage is an adjustable voltage related to probability, thereby realizing a probabilistic flipping function that controls the output high and low levels under different reference voltages. The present invention utilizes multiple randomly flipped magnetic tunnel junctions to form an array to form a voltage-adjustable probabilistic bit generator, which can better realize the probability calculation function.

A spin current magnetization rotating element includes: a first ferromagnetic layer having a variable magnetization direction; and a spin orbit moment wiring layer adjacent to the first ferromagnetic layer. At least one element in the spin-orbit moment wiring layer has a crystal structure in which when dimensions of lattice constants of the crystal structure are represented by a, b, and c: atoms occupy internal coordinates: (0, 0, 0), (0.5, 0.5, 0), (0.25, 0.75, 0.25), (0.75, 0.25, 0.25), (0, 0.5, 0.5), (0.5, 0, 0.5), (0.75, 0.75, 0.75), and (0.25, 0.25, 0.75); the ab planes are laminated to have a quadruple helix structure along the c-axis; the angle (gamma) between the a-axis and the b-axis is in the range of 60 DEG < = gamma < = 120 DEG, and the ratio of b to a (b / a) is in the range of 0.2 < = b / a < = 1.0.

The disclosure provides a topological spin material-based magnetic resistance storage device, comprising: a spin-orbit coupling layer, a material being a topological insulator, for generating a spin current; a nickel oxide layer formed on the spin-orbit coupling layer; an interface layer formed on the nickel oxide layer; and a magnetic tunnel junction formed on the interface layer, comprising ferromagnetic layers formed on both sides of a barrier layer; the spin current acts on the ferromagnetic layers in the form of magnons after being transmitted in the nickel oxide layer, and the interface layer is used for enhancing anisotropy of the ferromagnetic layers.