26 results about "Spin wave" patented technology

This invention provides a nanoscale spin waveguide based on alternating magnet domain walls, belonging to the field of magnetic device technology. The device comprises, from bottom to top, a substrate, an alternating magnet thin film, and a microwave excitation source. The microwave excitation source excites an alternating magnetic field with a single frequency. The alternating magnetic field interacts with the magnetic moments of the alternating magnet thin film, causing the magnetic moments to precess. This precession is then propagated outward from the microwave excitation source in the form of a wave, forming a spin wave. By reducing the frequency of the alternating magnetic field, the spin wave propagates only within the domain walls of the alternating magnet thin film, realizing an alternating magnet domain wall spin waveguide. This invention reduces the difficulty of spin wave excitation, which is beneficial for reducing device energy consumption. Furthermore, this invention offers advantages in device miniaturization and high efficiency, and can promote the generation and development of spin wave devices based on anisotropic media, possessing broad application prospects.

Aspects of the present disclosure generally relate to a magnetic recording device comprising a magnetic recording head. The magnetic recording head comprises a main pole, the main pole comprising a contact recessed from a media facing surface (MFS) and a contact terminal coupled to the contact, a trailing shield disposed adjacent to the main pole, a spin torque oscillator (STO) device disposed between the main pole and the trailing shield, a leading shield disposed adjacent to the main pole, the contact being disposed over the leading shield, a first alternating current (AC) source coupled to the main pole and the contact terminal, and a second AC source coupled to the trailing shield and the main pole. The first AC source is configured to generate an AC field, and the AC field is configured to generate spin waves near the contact to transfer energy to the STO device.

The application discloses a kind of ferrite gyromagnetic nonlinear loss transient response theoretical model and parameter simulation method under vertical pumping configuration, belong to microwave technical field, including the following steps: obtaining ferrite material parameters and target excitation microwave signal parameters, signal parameter at least includes microwave signal frequency, pulse width tau;Pulse width dependent function for representing consistent precession magnetic moment and the coupling strength of non-consistent precession magnetic moment (spin wave) is constructed.In view of this, the application first establishes the quantitative relationship model between the excitation microwave pulse width tau and the nonlinear loss excitation threshold (tau) in the theoretical framework of vertical pumping configuration, establishes the quantitative relationship model between the excitation microwave pulse width tau and the nonlinear loss excitation threshold (tau).The model can accurately describe the nonlinear effect of ferrite under nanosecond transient pulse excitation, and the dynamic law of the excitation condition and the change of pulse width.For the design of ferrite limiter device facing high-power microwave electromagnetic environment, important theory and design basis are provided.

The invention provides a spin wave test image denoising method, which is a data processing method provided based on a microwave excitation-electrical detection spin wave technology, and comprises the following steps of: firstly, subtracting original data from data at a maximum magnetic field; secondly, the processed data matrix is divided into a limited number of sub-matrixes, medians under different frequencies in each sub-matrix are obtained to serve as reference signals, final spin wave transmission signals are obtained by subtracting data in the sub-matrixes, and finally spin wave magnetic parameters are obtained through fitting by means of a spin wave frequency formula. Most signals which do not change along with the change of the magnetic field are removed, and the method is suitable for removing background noise of instrument lines and devices in a spin wave transmission experiment and improving the signal-to-noise ratio of data.

The invention discloses a magnetic field adjustable spin wave excitation mode and magnetic damping magnetic material and a preparation method and application thereof. The magnetic material is Co1. 8Fe1Si1, and the crystal structure of the magnetic material is A2 or B2. The effective magnetic damping of the material is remarkably adjustable in an external magnetic field of 600-6600 Oe, and the maximum change range is 49.1 * 10 <-3 >-8.6 * 10 <-3 >; meanwhile, the number of spin wave excitation modes is increased from 3 to 5, and an MSSW mode, a Killion mode and a 1 / 2 / 3-order PSSW mode can be excited at the same time at most. The material is obtained by sequentially depositing a buffer layer and a Co1. 8Fe1Si1 alloy film on a substrate through vacuum magnetron sputtering and carrying out vacuum annealing. The magnetic material disclosed by the invention has an important application prospect in the field of reconfigurable spin electronic devices due to a spin wave excitation mode with an adjustable magnetic field and a magnetic damping characteristic.

The invention provides a nanometer spin wave waveguide based on an alternating magnet magnetic domain wall, and belongs to the technical field of magnetic devices. The device comprises a substrate layer, an alternating magnet film and a microwave excitation source which are sequentially arranged from bottom to top, the microwave excitation source excites an alternating magnetic field with a single frequency, the alternating magnetic field interacts with the magnetic moment of the alternating magnet film, so that the magnetic moment generates precession, and the precession is transmitted to the outside of the microwave excitation source in a wave form to form a spin wave; and the frequency of the alternating magnetic field is reduced, so that the spin wave is only transmitted in the magnetic domain wall in the alternating magnet film, and the spin wave waveguide of the magnetic domain wall of the alternating magnet is realized. According to the device, the difficulty of spin wave excitation is reduced, the energy consumption of the device is reduced, meanwhile, the device has the advantages of device miniaturization and high efficiency, generation and development of spin wave devices based on anisotropic media can be promoted, and the device has wide application prospects.

The invention relates to a device (1) for the detection of spin waves, comprising - a magnetic film (2) adapted to guide a spin wave excited by an excitation means (5), - a magneto-resistive element (3), wherein the magneto-resistive element (3) is coupled to the magnetic film (2) by magnetic coupling, wherein the magneto-resistive element (3) is configured to exhibit a magneto-resistive effect in response to a magnetization state of the magnetic film (2), the magnetization state of at least a part of the magneto-resistive element (3) varying as a function of the guided spin wave, the device (1) further comprising: - measurement means (6) configured to detect an electrical signal corresponding to the magneto-resistive effect The invention also relates to a method for the detection of spin waves.

The invention discloses a device stress isolation system and method, and relates to the technical field of stress isolation, and the method comprises the steps: preparing a magnetic topological insulator film on the surface of a device, forming a heterojunction structure through deposition and annealing treatment, verifying the conversion efficiency of converting mechanical stress into spin waves, and outputting the energy flux density distribution of the spin waves; a magnetic topological insulator film and a space-time coding metamaterial layer are integrated, a sensor array is deployed to monitor a magnetic field and temperature in real time, a spin wave path and coding parameters are controlled and adjusted through cooperation of multiple physical fields, and dynamic traveling wave stiffness field distribution is output; and dynamically matching the propagation characteristics of the spin wave and the traveling wave stiffness field through iterative updating of an optimization algorithm, outputting optimized dynamic traveling wave stiffness field calibration parameters, carrying out full-condition vibration testing, and verifying the isolation performance. According to the invention, through a multi-physical field cooperative control and dynamic optimization mechanism, full-link performance improvement of device stress isolation is satisfied.

The application belongs to the field of magnetic materials, and particularly relates to a high-power garnet ferrite and a preparation method thereof. 2+ -Ge 4+ or Co 2+ -Si 4+ ion joint substitution, through reasonable design of Co 2+ ion and Mn 3+ ion doping amount, combined with appropriate Dy 3+ doping, a garnet ferrite capable of simultaneously having high remanence ratio, low resonance line width, high spin wave line width and high Curie temperature is obtained. The application aims at the shortcomings that garnet ferrite is difficult to simultaneously have low resonance line width, high spin wave line width and high Curie temperature, and proposes a method of Co 2+ ion and Dy 3+ ion joint substitution, so that the garnet ferrite can simultaneously have low resonance line width, high spin wave line width and high Curie temperature.

A device that produces spin waves includes a base substrate, a transducer that includes a first plane defined by a first magnetic film and a second plane defined by a plurality of metal strips, and a second magnetic film having a spin-wave phase velocity lower than the first magnetic film. The second magnetic film is adjacent to the first magnetic film, and the first plane and the second plane are parallel. The plurality of metal strips are configured to receive a first signal, such that the first signal excites a first spin wave in the first magnetic film. The second magnetic film is configured to produce a second spin wave having a wavelength shorter than the first spin wave.

A manufacturing system of a ferromagnetic sensing material is used to process a raw material into the ferromagnetic sensing material. The manufacturing system of the ferromagnetic sensing material includes a rotating device, a working cavity, a carrying element, an array magnet module, a spin wave excitation device, a baffle module, a measuring device, and a control unit. The rotating device includes a rotating shaft. The carrying element is disposed in an internal space of the working cavity to carry the raw material. The array magnet module is used to provide a fixed magnetic field. The spin wave excitation device is used to provide a high-frequency magnetic field spin wave. The baffle module is used to change an electromagnetic wave distribution in the working cavity. The measuring device is used to measure the ferromagnetic sensing material. The control unit obtains a magnetization result of the ferromagnetic sensing material according to a reflected beam. The rotating device drives the carrying element and the array magnet module to rotate.

The patent discloses a high-dielectric YIG ferrite material and a preparation method thereof, and belongs to the technical field of microwave ferrite materials 1.65‑x‑y Bi 1.35 Ca x+ y Zr x Sn y Fe 5‑x‑y O 12 , wherein x=0.25-0.65, and y=0-0.5.The garnet-type microwave ferrite material has high dielectric constant and medium power characteristics, and has excellent electromagnetic performance; the relative dielectric constant epsilon is about 27, the dielectric loss tan epsilon is less than or equal to 8*10 ‑4 , the spin wave line width Delta Hk is greater than or equal to 9 Oe, the ferromagnetic resonance line width Delta H is less than or equal to 105 Oe, and 4pi Ms is greater than or equal to 1900 Gs; the garnet-type microwave ferrite material can effectively reduce the design size of a microwave circulator device and meet the miniaturization requirement.

An electronic filter for filtering multiple signals including a signal of interest and an other spectral content induces a desired frequency selective limiter response with activator signals. The activator signals have an approximately 180-degree phase difference and effectively cancel in a final combiner, leaving only the desired filter response.

The application belongs to the field of quantum precision measurement, and particularly relates to a quantum temperature measurement structure and a quantum temperature measurement system. The quantum temperature measurement structure is based on the influence of temperature on the spin wave wavelength of the two-dimensional magnetic material layer, modulates the NV color center to radiate the detected fluorescence, and obtains the local temperature of the sample to be measured based on the detected fluorescence. When the quantum temperature measurement structure is applied, the quantum temperature measurement structure is close to the sample to be measured, so that the temperature of the sample to be measured can be measured, and non-contact measurement is realized. The measurement structure provided in the application adopts a diamond NV color center quantum sensor which has the advantages of small volume, chemical inertness, bright and stable fluorescence and the like, so that the temperature field distribution resolution is higher, the measurement process is more stable, and the environmental interference resistance is stronger. Meanwhile, the quantum temperature measurement structure has the advantages of fast measurement speed, high sensitivity and high accuracy.

The invention particularly relates to a method for regulating and controlling twisted spin waves in a cylindrical magneton crystal, and belongs to the field of spintronics. According to the scheme, a ferromagnetic cylindrical magneton crystal with periodical modulation magnetocrystalline anisotropy is constructed, theoretical analysis is carried out on a magnetic oscillator energy band structure of the ferromagnetic cylindrical magneton crystal, and it is shown that twisted spin waves with any orbital angular momentum have the magnetic oscillator band gap characteristic at the boundary of a Brillouin region. By accurately regulating and controlling parameters such as magnetocrystalline anisotropy strength or a magneton crystal lattice constant, effective tuning of the band gap position and width of the twisted spin wave can be realized, and further accurate control of the propagation behavior of the twisted spin wave can be realized. The method has important significance for realizing high-capacity information transmission and processing based on the twisted spin wave.

The invention relates to the field of testing of rock and soil mechanics and granular material mechanics, and provides a method and a system for obtaining structure anisotropy parameters of a discrete material, and the method comprises the following steps: S1, establishing a micro-form constitutive model for describing the particle motion state of the discrete material; s2, obtaining a frequency dispersion relation between spin longitudinal waves and spin transverse waves; s3, establishing a relation model between the cut-off frequency and the anisotropic parameters of the discrete material structure; and S4, performing inversion to obtain the structure anisotropy parameters of the discrete material. According to the method, the characteristics that the spin wave cut-off frequency is non-zero and can be stably measured are fully utilized, the defect that a traditional wave velocity inversion method based on displacement waves is greatly influenced by the frequency dispersion effect and test conditions is effectively overcome, and the method has the advantages of being clear in theoretical basis, high in measurement stability, high in inversion precision, high in application and popularization performance and the like; the method can be widely applied to structural diagnosis of granular materials, design optimization of engineering materials and anisotropic recognition research of complex geological media.

An electron spin wave filter 1 comprises: a one-dimensional thin wire structure 10 through which electron spin waves propagate; a gate electrode 11 which is located along a part of the one-dimensional thin wire structure 10; a first ohmic electrode 12 which is disposed upstream from the gate electrode 11 and is in ohmic contact with the one-dimensional thin wire structure 10; and a second ohmic electrode 13 which is disposed downstream from the gate electrode 11 and is in ohmic contact with the one-dimensional thin wire structure 10. When receiving input of electron spin waves having a plurality of wavelengths included in a first wavelength range, the electron spin wave filter 1 outputs only electron spin waves having wavelengths included in the first wavelength range and included in a second wavelength range narrower than the first wavelength range.

The invention discloses a brain signal sensing device based on spin waves in a heterostructure, which is a head sleeve compounded into a whole in a layered manner and sequentially comprises a silicon-based isolating layer, a main module and a shielding layer from inside to outside, the main module is of a heterostructure composed of an insulator magnetic layer used for exciting spin current at the bottom, a non-ferromagnetic insulating layer used for amplifying the spin current in the middle and a non-magnetic layer used for detecting electric signals at the top, and microwave waveguides are distributed between the main module and the shielding layer. And the main module is connected with an output line which penetrates out of the shielding layer and is used for signal transmission. According to the brain signal sensing device, a voltage signal can be detected after microwaves are introduced into a heterostructure in a low-intensity magnetic field environment, so that signal feedback of the brain in various mental states is monitored, and the signal feedback serves as a data source of machine learning; and the device is relatively simple in structure, can be rapidly prepared and put into test debugging through a mature process, and has a relatively large application potential of an artificial intelligence brain-computer interface.

A system for coupling a qubit to a register, wherein the system controls application of a protocol comprising a sequence of pulses synchronized with an RF field, the protocol further comprising a timing, a phase, and a duration of each of the pulses comprising a single qubit gate, a period and amplitude of the RF field, and a number of repeats of the sequence, so that application of the protocol controls a coherent spin exchange interaction between a register and a qubit having a zero magnetic dipole moment. The qubit comprises a first spin state and a second spin state both of which have a zero magnetic dipole moment; the register comprises multiple register spins having an energy level structure; and the register spins are indistinguishable so as to be configurable in basis states including a superposition state used for storing the quantum state of the qubit.

This invention relates to spin-wave switches and filters based on magnetic crystals. According to one embodiment, a magnetic crystal device may include a ferromagnetic layer and an antiferromagnetic planar periodic structure disposed on the ferromagnetic layer. The magnetic crystal device of this invention can be used as a spin-wave switch to effectively control the transmission coefficient of spin waves, or as a spin-wave filter to filter spin waves of specific frequencies.

The invention discloses a reconfigurable nanoscale spin wave directional coupler, and relates to the technical field of magnetic oscillator devices, the reconfigurable nanoscale spin wave directional coupler comprises a magnetic material formed by a magnetic film, and the magnetic material is divided into three parallel and adjacent areas according to a surface area, a first magnetic field perpendicular to the surface of the thin film is applied to the areas on the two sides, a second magnetic field perpendicular to the surface of the thin film and opposite to the first magnetic field in direction is applied to the middle area, and when the gap width between the upper area and the lower area is smaller than or equal to 50 nm, the spin wave directional coupler in the parallel magnetization state is formed; and when the width of the gap between the upper region and the lower region is greater than 50nm, the spin wave directional coupler in an anti-parallel magnetization state is formed. The reconfigurability of magnetization state conversion of the spin wave directional coupler is realized under the condition that an external magnetic field is not needed, and the overall stability of an integrated magnetic oscillator circuit is improved.

A device that produces spin waves includes a base substrate, a transducer that includes a first plane defined by a first magnetic film and a second plane defined by a plurality of metal strips, and a second magnetic film having a spin-wave phase velocity lower than the first magnetic film. The second magnetic film is adjacent to the first magnetic film, and the first plane and the second plane are parallel. The plurality of metal strips are configured to receive a first signal, such that the first signal excites a first spin wave in the first magnetic film. The second magnetic film is configured to produce a second spin wave having a wavelength shorter than the first spin wave.

The system comprises a light source, a polarization light splitting unit, a time delay unit, a sample and a polarization detection unit, the polarization light splitting unit is arranged in the direction of an initial light beam emitted by the light source and divides the initial light beam into a light splitting transmission light beam, a light splitting reflection light beam and a semi-light splitting transmission light beam, and the time delay unit is arranged on the light splitting transmission light beam; the time delay unit converts the light splitting transmission light beam into an excitation light beam, converts the light splitting reflection light beam into a regulation and control light beam and converts the half light splitting transmission light beam into a detection light beam, the excitation light beam, the regulation and control light beam and the detection light beam irradiate the surface of a sample and are reflected to form a sample light beam, and the polarization detection unit receives the sample light beam and outputs the sample light beam. Spinning wave phase regulation and control are realized by changing the time delay of the time delay unit. According to the invention, 0-2pi continuous regulation and control of the spin wave phase can be realized.

The embodiment of the present application provides a spin wave device and a memory, the spin wave device comprising: a strong spin-orbit coupling material layer, a first magnetic layer, and a spin wave channel layer arranged between the strong spin-orbit coupling material layer and the first magnetic layer; at least one interlayer arranged between the strong spin-orbit coupling material layer and the spin wave channel layer; wherein the strong spin-orbit coupling material layer is driven by a current to generate a spin current, and the first magnetic layer is driven by the current to generate a magnetic moment precession or flip. By arranging the interlayer in the device, the efficiency of the magnetic moment precession or flip is improved, the power consumption of the device is reduced, and the thermal stability of the device is improved.

Aspects of the present disclosure generally relate to a magnetic recording device comprising a magnetic recording head. The magnetic recording head comprises a main pole, the main pole comprising a contact recessed from a media facing surface (MFS) and a contact terminal coupled to the contact, a trailing shield disposed adjacent to the main pole, a spin torque oscillator (STO) device disposed between the main pole and the trailing shield, a leading shield disposed adjacent to the main pole, the contact being disposed over the leading shield, a first alternating current (AC) source coupled to the main pole and the contact terminal, and a second AC source coupled to the trailing shield and the main pole. The first AC source is configured to generate an AC field, and the AC field is configured to generate spin waves near the contact to transfer energy to the STO device.

The invention discloses a preparation method of ultrafine grain high dielectric garnet ferrite, and belongs to the technical field of microwave materials, the method comprises the following steps: weighing various oxide raw materials according to a stoichiometric ratio, and preparing Bi < 1.5-x > Y < 1.15 + x-y > Ca < 0.35 > Dy < y > Zr < 0.35 > In < z > Fe < 4.5-z >, 0 lt; xlt; 0, 0, 0, 0; yt; Yt; 0, 0.2, 0.05 lt; zlt, zlt; and 0.4 part. In < 3 + > is utilized to regulate and control material components in the high-dielectric garnet, optimized pre-sintering and sintering processes are combined, nucleation and growth of the material are improved, and preparation of the ultra-fine grain high-dielectric garnet is achieved. The ferromagnetic resonance line width of the material can be reduced to 70 Oe, the spin wave line width reaches 16 Oe, other magnetic properties are stable, and the bending strength of the material is remarkably improved.